CN106298507A - Patterning method - Google Patents
Patterning method Download PDFInfo
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- CN106298507A CN106298507A CN201510295058.8A CN201510295058A CN106298507A CN 106298507 A CN106298507 A CN 106298507A CN 201510295058 A CN201510295058 A CN 201510295058A CN 106298507 A CN106298507 A CN 106298507A
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- 238000000034 method Methods 0.000 title claims abstract description 130
- 238000000059 patterning Methods 0.000 title claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 137
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 60
- 239000007800 oxidant agent Substances 0.000 claims description 58
- 230000001590 oxidative effect Effects 0.000 claims description 58
- 238000001312 dry etching Methods 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 description 15
- 238000012545 processing Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003628 erosive effect Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012163 sequencing technique Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 238000000671 immersion lithography Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000101 transmission high energy electron diffraction Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Abstract
The invention discloses a patterning method. A layer of material is provided. A plurality of mask structures sequentially including a first mask layer and a first photoresist layer are formed on the material layer. A second mask layer is conformally formed on the material layer covering the mask structure. A first sacrificial layer is formed between the mask structures. Removing part of the second mask layer to expose the first photoresist layer, so as to form a first U-shaped mask layer between the mask structures. The first photoresist layer and the first sacrificial layer are removed. A third mask layer having a first surface and a second surface lower than the first surface is conformally formed on the material layer. A second sacrificial layer is formed on a second surface of the third mask layer. Removing part of the third mask layer to expose the protruding part of the first U-shaped mask layer to form a second U-shaped mask layer. And patterning the material layer by using the protruding part of the second U-shaped mask layer as a mask.
Description
Technical field
The present invention relates to a kind of manufacture method, and particularly relate to a kind of patterning method.
Background technology
Just develop towards the element of miniaturization with higher integrated level as target along with semiconductor element, must
Semiconductor element size must be reduced to promote its integrated level.In order to reduce the size of semiconductor element, reduce
Live width, reduction line-spacing are the problems that must solve with the degree of accuracy of raising pattern transfer.By improving photoetching
Processing technology is the means that one of which solves above-mentioned problem, by existing immersion lithography (Immersion
Lithography), available less live width or line-spacing, but it is intended to obtain less live width or line-spacing needs to use
There is the exposure technique of extreme ultraviolet (EUV, Extreme Ultraviolet).But, above-mentioned exposure technique is but
It is not used to produce in a large number and needs high equipment cost.
Autoregistration double patterning (SADP, Self-Aligned Double Patterning) is another kind of solution
The means of above-mentioned problem.By forming the first clearance wall on the sidewall of mask pattern, remove mask pattern
And form the second clearance wall at the first clearance wall sidewall, finally the first clearance wall is removed, with the second gap
Wall carries out patterning the technology of processing technology as mask.By autoregistration double patterning, institute can be made
The live width obtained or line-spacing are contracted to the live width of general photoetching process or the half of line-spacing.
But, in traditional autoregistration double patterning processing technology, due to first clearance wall the right and left
Asymmetric, when causing being subsequently formed the second clearance wall, its shape is affected by the shape of the first clearance wall, makes
The second asymmetric situation of clearance wall the right and left is more serious.And follow-up using the second clearance wall as mask
When carrying out patterning processing technology, it is impossible to accurately transfer a pattern to material layer to be patterned.
Summary of the invention
It is an object of the invention to provide a kind of patterning method, can accurately transfer a pattern to treat pattern
The material layer changed.
For reaching above-mentioned purpose, the present invention provides a kind of patterning method, comprises the following steps.Material is provided
Layer.Forming multiple mask arrangement on material layer, mask arrangement sequentially includes the first mask by material layer
Layer and the first photoresist oxidant layer.Material layer is conformally formed the second mask of coverage mask structure
Layer.To forming the first sacrifice layer less than on the second mask layer between mask arrangement.Remove part second to cover
Mold layer and expose the first photoresist oxidant layer, U-shaped cover forming first between adjacent mask arrangement
Mold layer.Remove the first photoresist oxidant layer and the first sacrifice layer.At the U-shaped mask of the first mask layer and first
Being conformally formed the 3rd mask layer on Ceng, wherein the 3rd mask layer has first surface and second surface, the
One surface is higher than second surface.The second sacrifice layer is formed to the second surface less than the 3rd mask layer.Move
The protuberance of the first U-shaped mask layer is exposed, with in the first U-shaped mask except part the 3rd mask layer
The second U-shaped mask layer is formed between the protuberance of layer.With the protuberance of the second U-shaped mask layer as mask,
Material layer is patterned.
Described in one embodiment of the invention, in above-mentioned patterning method, material layer is carried out figure
Case method comprises the following steps.With the protuberance of the second U-shaped mask layer as mask, remove a U
The protuberance of type mask layer and the second sacrifice layer.Remove between the protuberance of the second U-shaped mask layer
Second U-shaped mask layer, the first mask layer not covered by the protuberance of the second U-shaped mask layer, a U
Type mask layer and material layer.
Described in one embodiment of the invention, in above-mentioned patterning method, material layer is formed
The step of mask arrangement comprises the following steps.Material layer sequentially forms the first layer of mask material and first
Photoresist oxidant layer.Part the first layer of mask material is removed for mask with the first photoresist oxidant layer.
Described in one embodiment of the invention, in above-mentioned patterning method, the first mask layer and
The material of two mask layers can be identical material.
Described in a bright embodiment approved for distribution, in above-mentioned patterning method, the material example of the 3rd mask layer
As being different from material and the material of the second mask layer of the first mask layer.
Described in one embodiment of the invention, in above-mentioned patterning method, the first U-shaped mask layer
Protuberance and the shape of protuberance of the second U-shaped mask layer include rectangle.
Described in one embodiment of the invention, in above-mentioned patterning method, the first mask layer,
The forming method of two mask layers and the 3rd mask layer includes chemical vapour deposition technique or ald respectively
Method.
Described in one embodiment of the invention, in above-mentioned patterning method, the first sacrifice layer and
The forming method of two sacrifice layers includes method of spin coating respectively.
Described in one embodiment of the invention, in above-mentioned patterning method, remove part second and cover
Mold layer and the method removing part the 3rd mask layer include dry etching method respectively.
Described in one embodiment of the invention, in above-mentioned patterning method, remove first photic anti-
The method of erosion oxidant layer, the first sacrifice layer and the second sacrifice layer includes wet etching, dry etching method respectively
Or plasma clean method.
Based on above-mentioned, in the patterning method of the present invention, by using the protuberance conduct of U-shaped mask layer
Mask, accurately can be transferred to material layer to be patterned by required pattern.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and coordinate
Appended accompanying drawing is described in detail below.
Accompanying drawing explanation
Figure 1A to Fig. 1 H is that material layer is patterned by the one depicted in one embodiment of the invention
Generalized section；
Fig. 2 A to Fig. 2 K is that the one depicted in another embodiment of the present invention carries out pattern to material layer
The generalized section changed.
Symbol description
110,210: material layer
111,211: mask arrangement
112,116,130,212,216,230: mask layer
114,214: photoresist oxidant layer
118,136,218,236: sacrifice layer
120,140,220,240:U type mask layer
122,142,222,242: protuberance
132,134,232,234,235: surface
124,144,224,244: bottom
213: pre-reservation region
219,237,239,246: patterning photoresist oxidant layer
Detailed description of the invention
Figure 1A to Fig. 1 H is, according to the one depicted in one embodiment of the invention, material layer is carried out figure
The generalized section of case.
Refer to Figure 1A, first, it is provided that material layer 110.Material layer 110 e.g. substrate or be positioned at base
Material layer at the end.Material layer 110 e.g. silicon base, polysilicon, metal or metal silicide etc..
The forming method of material layer 110 e.g. chemical vapour deposition technique.
Forming multiple mask arrangement 111 on material layer 110, mask arrangement 111 is by material layer 110
Sequentially include mask layer 112 and photoresist oxidant layer 114.Form the method for mask arrangement 111 e.g.
Prior to sequentially forming layer of mask material (not illustrating) and photoresist oxidant layer 114 on material layer 110, then with
Photoresist oxidant layer 114 is formed for mask removes part layer of mask material.Photoresist oxidant layer 114
Forming method e.g. carries out lithographic fabrication process and is formed.The forming method of layer of mask material is e.g. changed
Learn vapour deposition process or atomic layer deposition method, the material of layer of mask material e.g. silicon nitride or silicon oxide.
In this embodiment, the material of layer of mask material e.g. silicon nitride.
Refer to Figure 1B, material layer 110 is conformally formed the mask layer of coverage mask structure 111
116.The forming method of mask layer 116 e.g. chemical vapour deposition technique or atomic layer deposition method, mask
The material e.g. silicon nitride of layer 116 or silicon oxide, the wherein material of mask layer 116 and mask layer 112
Material can be identical material.In this embodiment, the material of mask layer 116 e.g. silicon nitride.?
When using atomic layer deposition method to form mask layer 116, processing technology can be carried out at room temperature or room temperature, so
Can ensure that during formation is covered in mask layer 116 thereon, photic anti-in mask arrangement 111
Erosion agent 114 is difficult to decompose or deformation because high temperature produces, the shape needed for making mask layer 116 to maintain, and
The U-shaped mask layer 120 (refer to Fig. 1 C) contributing to being subsequently formed (refer to U-shaped mask layer 140
Fig. 1 F) also maintain required shape so that entering with the protuberance 142 of U-shaped mask layer 140 for mask
During row patterning, accurately required pattern can be transferred to material layer 110 to be patterned.
Then, to less than forming sacrifice layer 118 on the mask layer 116 between mask arrangement 111.At this
In embodiment, sacrifice layer 118 is to illustrate as a example by mask layer 116 is completely covered.Sacrifice layer 118
Forming method e.g. method of spin coating (Spin Coating), the material of sacrifice layer 118 such as can use
The material of bottom anti-reflection layer (BARC, Bottom Anti-Reflective Coating), such as organic material.
Refer to Fig. 1 C, remove component masking layer 116 and expose photoresist oxidant layer 114, with in phase
U-shaped mask layer 120 is formed between adjacent mask arrangement 111.U-shaped mask layer 120 e.g. has 2
Individual protuberance 122 and 1 bottom 124.During removing component masking layer 116, can move simultaneously
Except at least one of sacrifice layer 118.In this embodiment, it is with covering between mask arrangement 111
Illustrate as a example by remaining sacrifice layer 118 in mold layer 116.Therefore, can be by sacrifice layer 118
Protect the bottom of the protuberance 122 of U-shaped mask layer 120 and the bottom 124 of U-shaped mask layer 120.?
During removing component masking layer 116 and forming U-shaped mask layer 120, although U-shaped mask layer 120
The top of protuberance 122 may have a small amount of loss, but the shape of protuberance 122 substantially can maintain
Required shape, is e.g. similar to rectangle, and the U-shaped mask layer 140 contributing to being subsequently formed (please
With reference to Fig. 1 F) also maintain required shape so that with the protuberance 142 of U-shaped mask layer 140 for covering
When mould patterns, accurately required pattern can be transferred to material layer 110 to be patterned.Move
Method e.g. dry etching method except component masking layer 116.
Refer to Fig. 1 D, remove photoresist oxidant layer 114 and sacrifice layer 118.Remove photoresist oxidant layer
114 with method e.g. wet etching, dry etching method or the plasma clean method of sacrifice layer 118.
In this embodiment, photoresist oxidant layer 114 and sacrifice layer 118 are to say as a example by removing simultaneously
Bright, but the present invention is not limited thereto.In other are implemented, can first remove sacrifice layer 118 and remove light again
Cause resist layer 114, it is possible to first remove photoresist oxidant layer 114 and remove sacrifice layer 118 again.In this skill
Art field tool usually intellectual can according to processing technology demand determine to remove photoresist oxidant layer 114 with
The sequencing of sacrifice layer 118.
Then, mask layer 112 with U-shaped mask layer 120 are conformally formed mask layer 130, wherein
Mask layer 130 has surface 132 and surface 134, and surface 132 is higher than surface 134.Mask layer 130
Forming method e.g. chemical vapour deposition technique or atomic layer deposition method, the material of mask layer 130 is such as
It is silicon nitride or silicon oxide.The material of mask layer 130 is e.g. different from the material of mask layer 112 and covers
The material of mold layer 116.In this embodiment, the material of mask layer 130 e.g. silicon oxide.
Refer to Fig. 1 E, to less than forming sacrifice layer 136 on the surface 134 of mask layer 130.Real at this
Executing in example, sacrifice layer 136 is to illustrate as a example by mask layer 130 is completely covered.Sacrifice layer 136
Forming method e.g. method of spin coating, the material of sacrifice layer 136 such as can use bottom anti-reflection layer
Material, such as organic material.
Refer to Fig. 1 F, remove component masking layer 130 and expose the protuberance of U-shaped mask layer 120
122, to form U-shaped mask layer 140 between the protuberance 122 of U-shaped mask layer 120.U-shaped cover
Mold layer 140 e.g. has 2 protuberances 142 and 1 bottom 144.Removing part part mask
During layer 130, at least one of sacrifice layer 136 can be removed simultaneously.In this embodiment, it is
Illustrate as a example by remaining sacrifice layer 136 on the surface 134 of mask layer 130.Therefore, may be used
The bottom of the protuberance 142 of U-shaped mask layer 140 and U-shaped mask layer is protected by sacrifice layer 136
The bottom 144 of 140.During removing component masking layer 130 and forming U-shaped mask layer 140,
Although a small amount of loss may be arranged at the top of the protuberance 142 of U-shaped mask layer 140, but protuberance 142
Shape substantially can maintain required shape, be e.g. similar to rectangle, thus with U-shaped mask layer
When the protuberance 142 of 140 patterns for mask, can accurately be transferred to treat figure by required pattern
The material layer 110 of case.Remove the method e.g. dry etching method of component masking layer 130.
Refer to Fig. 1 G, with the protuberance 142 of U-shaped mask layer 140 as mask, remove U-shaped mask
Protuberance 122 and the sacrifice layer 136 of layer 120.Remove the side of the protuberance 122 of U-shaped mask layer 120
Rule dry etching method in this way.Remove the method e.g. wet etching of sacrifice layer 136, dry-etching
Method or plasma clean method.In this embodiment, the protuberance 122 of U-shaped mask layer 120 and sacrifice
Layer 136 is to illustrate as a example by removing simultaneously, but the present invention is not limited thereto.Implement at other
In, the protuberance 122 that can first remove U-shaped mask layer 120 removes sacrifice layer 136 again, it is possible to first remove
Sacrifice layer 136 removes the protuberance 122 of U-shaped mask layer 120 again.Have in this technical field and generally know
The knowledgeable can determine to remove protuberance 122 and the sacrifice layer of U-shaped mask layer 120 according to processing technology demand
The sequencing of 136.
Refer to Fig. 1 H, with the protuberance 142 of U-shaped mask layer 140 as mask, remove be positioned at U-shaped
U-shaped mask layer between the protuberance 142 of mask layer 140 140 (that is, U-shaped mask layer in Fig. 1 G
The bottom 144 of 140), the mask layer 112 that do not covered by the protuberance 142 of U-shaped mask layer 140, U
Type mask layer 120 and material layer 110.Remove between the protuberance 142 of U-shaped mask layer 140
U-shaped mask layer 140, the mask layer 112 not covered by the protuberance 142 of U-shaped mask layer 140, U
Type mask layer 120 and the method e.g. dry etching method of material layer 110.
Additionally, removing mask layer 112, the U not covered by the protuberance 142 of U-shaped mask layer 140
During type mask layer 120 and material layer 110, patterned mask layer 112 and U-shaped mask layer
120 also as hard mask (Hard Mask), and can transfer a pattern to material layer 110.According to follow-up system
Make the demand of technique, member-retaining portion can be positioned at the mask layer 112 on patterned material layer 110 with U-shaped
Mask layer 120 (as shown in fig. 1h), or remove mask layer 112 and U-shaped mask layer 120 completely.
From Fig. 1 G and Fig. 1 H, can be mask by the protuberance 142 of U-shaped mask layer 140,
Material layer 110 is patterned.But, the method patterning material layer 110 is not limited to
The mode of Fig. 1 G and Fig. 1 H, as long as come with the protuberance 142 of U-shaped mask layer 140 for mask right
Material layer 110 carries out patterning and i.e. belongs to the scope that the present invention is protected.
In the present embodiment, the width of mask arrangement 111 may be set to 3F, between mask arrangement 111
Distance may be set to 5F, and mask layer 112, mask layer 116, the thickness of mask layer 130 may be set to F,
And making the characteristic size (Feature Size) being transferred to the pattern on material layer 110 is F.Certainly, originally
The spirit of invention is not limited to this, can adjust above-described embodiment according to last live width or the demand of line-spacing
Parameter, the distance between the width of the most each mask arrangement, each mask arrangement, the thickness of mask layer.
Understand based on above-described embodiment, in above-mentioned patterning method, by using U-shaped mask layer 140
Protuberance 142 as mask, can accurately required pattern be transferred to material layer to be patterned
110。
Fig. 2 A to Fig. 2 K is to carry out material layer according to the one depicted in another embodiment of the present invention
The generalized section of patterning.
Refer to Fig. 2 A, it is provided that material layer 210.Material layer 210 e.g. substrate or be arranged in substrate
Material layer.The material of material layer 210 e.g. silicon base, polysilicon, metal or metal silicide.
The forming method of material layer 210 e.g. chemical vapour deposition technique.
Then, forming multiple mask arrangement 211 on material layer 210, mask arrangement 211 is by material layer
210 sequentially include mask layer 212 and photoresist oxidant layer 214.In material layer 210, dotted line frame rises
Pre-reservation region 213 is the material layer of large area needing after patterned processing technology to remain
210.Form the method for multiple mask arrangement 211 e.g. prior to sequentially forming mask on material layer 210
Material layer (not illustrating) and photoresist oxidant layer 214, then remove portion with photoresist oxidant layer 214 for mask
Point layer of mask material and formed.The forming method of photoresist oxidant layer 214 e.g. carries out optical graving workmanship
Skill and formed.The forming method of layer of mask material e.g. chemical vapour deposition technique or atomic layer deposition method,
The material of layer of mask material e.g. silicon nitride or silicon oxide.In this embodiment, the material of layer of mask material
Expect e.g. silicon nitride.
Refer to Fig. 2 B, material layer 210 is conformally formed the mask layer of coverage mask structure 211
216.The forming method of mask layer 216 e.g. chemical vapour deposition technique or atomic layer deposition method, mask
The material e.g. silicon nitride of layer 216 or silicon oxide, the wherein material of mask layer 216 and mask layer 212
Be identical material.In this embodiment, the material of mask layer 216 e.g. silicon nitride.Using
When atomic layer deposition method forms mask layer 216, processing technology can be carried out at room temperature or room temperature, so can be really
Protect and be covered in the processing technology of mask layer 216 thereon being formed, photic anti-in mask arrangement 211
Erosion agent 214 is difficult to decompose or deformation because high temperature produces, the shape needed for making mask layer 216 to maintain, and
The U-shaped mask layer 220 (refer to Fig. 2 C) contributing to being subsequently formed (refer to U-shaped mask layer 240
Fig. 2 F) also maintain required shape so that entering with the protuberance 242 of U-shaped mask layer 240 for mask
During row patterning, accurately required pattern can be transferred to material layer 210.
Then, to less than forming sacrifice layer 218 on the mask layer 216 between mask arrangement 211.At this
In embodiment, sacrifice layer 218 is to illustrate as a example by mask layer 216 is completely covered.Sacrifice layer 218
Forming method e.g. method of spin coating, the material of sacrifice layer 218 such as can use bottom anti-reflection layer
Material, such as organic material.
Then, sacrifice layer 218 is formed patterning photoresist oxidant layer 219, wherein patterns photic
Resist layer 219 at least covers the mask arrangement 211 in pre-reservation region 213.Patterning photoresist
The forming method of oxidant layer 219 e.g. carries out lithographic fabrication process and is formed.
Refer to Fig. 2 C, to pattern photoresist oxidant layer 219 as mask, remove component masking layer 216
And expose photoresist oxidant layer 214, with in not being patterned the adjacent of photoresist oxidant layer 219 covering
Mask arrangement 211 between form U-shaped mask layer 220.U-shaped mask layer 220 e.g. has 2
Protuberance 222 and 1 bottom 224.During removing component masking layer 216, can remove simultaneously
At least one of sacrifice layer 218.In this embodiment, it is with the mask between mask arrangement 211
Remain sacrifice layer 218 on layer 216 and retain the sacrifice layer below patterning photoresist oxidant layer 219
218, mask arrangement 211 illustrates as a example by mask layer 216.Therefore, sacrifice layer 218 can be passed through
Protect the bottom of the protuberance 222 of U-shaped mask layer 220 and the bottom 224 of U-shaped mask layer 220.
During removing component masking layer 216 and forming U-shaped mask layer 220, although U-shaped mask layer
A small amount of loss may be arranged at the top of the protuberance 222 of 220, but the shape of protuberance 222 substantially may be used
Shape needed for maintenance, is e.g. similar to rectangle, and contributes to the U-shaped mask layer being subsequently formed
240 (refer to Fig. 2 F) also maintain required shape so that at the protuberance with U-shaped mask layer 240
242 when patterning for mask, and required pattern can accurately be transferred to material layer to be patterned
210.Remove the method e.g. dry etching method of component masking layer 216.
Refer to Fig. 2 D, the photoresist oxidant layer remove patterning photoresist oxidant layer 219, being exposed
214 with sacrifice layer 218.Wherein, the photoresist oxidant layer 214 in pre-reservation region 213 is by above it
The protection of mask layer 216 and the most removed.Remove patterning photoresist oxidant layer 219, exposed
Photoresist oxidant layer 214 and the method e.g. wet etching of sacrifice layer 218, dry etching method or etc.
Gas ions ablution.In this embodiment, patterning photoresist oxidant layer 219, exposed photic
Resist layer 214 and sacrifice layer 218 are to illustrate as a example by removing simultaneously, but the present invention not with
This is limited.In this technical field, tool usually intellectual can determine to remove pattern according to processing technology demand
The photoresist oxidant layer 214 change photoresist oxidant layer 219, being exposed is suitable with the priority of sacrifice layer 218
Sequence.
Then, it is conformally formed mask at mask layer 212, mask layer 216 on U-shaped mask layer 220
Layer 230, wherein mask layer 230 has surface 232, surface 234 and surface 235, and surface 235 is higher than
Surface 232, and surface 232 is higher than surface 234.The forming method of mask layer 230 e.g. chemistry gas
Phase sedimentation or atomic layer deposition method, the material of mask layer 230 e.g. silicon nitride or silicon oxide.Mask
The material of layer 230 is e.g. different from the material of mask layer 212 and the material of mask layer 216.Real at this
Execute in example, the material of mask layer 230 e.g. silicon oxide.
Refer to Fig. 2 E, to less than forming sacrifice layer 236 on the surface 234 of mask layer 230.Real at this
Executing in example, sacrifice layer 236 is to illustrate as a example by mask layer 230 is completely covered.Sacrifice layer 236
Forming method e.g. method of spin coating, the material of sacrifice layer 236 such as can use bottom anti-reflection layer
Material, such as organic material.
Then, sacrifice layer 236 is formed patterning photoresist oxidant layer 237, wherein patterns photic
It is sacrificial that resist layer 237 at least covers above the surface 232 of the mask layer 230 in pre-reservation region 213
Domestic animal layer 236.The forming method of patterning photoresist oxidant layer 237 e.g. carry out lithographic fabrication process and
Formed.
Refer to Fig. 2 F, to pattern photoresist oxidant layer 237 as mask, remove component masking layer 230
And expose the protuberance 222 of U-shaped mask layer 220, with in the protuberance 222 of U-shaped mask layer 220
Between form U-shaped mask layer 240.U-shaped mask layer 240 e.g. has 2 protuberances 242 and 1
Individual bottom 244.During removing component masking layer 230, the sacrifice layer of a part can be removed simultaneously
236.In this embodiment, be with remain on the surface 234 of mask layer 230 sacrifice layer 236 with
And retain the sacrifice layer 236 under patterning photoresist oxidant layer 237, mask layer 230, mask layer 216
Illustrate with as a example by mask arrangement 211.Therefore, U-shaped mask can be protected by sacrifice layer 236
The bottom of the protuberance 242 of layer 240 and the bottom 244 of U-shaped mask layer 240.Removing part mask
Layer 230 and during forming U-shaped mask layer 240, although the protuberance 242 of U-shaped mask layer 240
Top may have a small amount of loss, but the shape of protuberance 242 substantially can maintain required shape,
E.g. it is similar to rectangle, thus carries out pattern with the protuberance 242 of U-shaped mask layer 240 for mask
During change, accurately required pattern can be transferred to material layer 210 to be patterned.Remove part mask
The method e.g. dry etching method of layer 230.
Refer to Fig. 2 G, with the protuberance 242 of U-shaped mask layer 240 as mask, remove and expose
The protuberance 222 of U-shaped mask layer 220, patterning photoresist oxidant layer 237 and sacrifice layer 236.Move
Method e.g. dry etching method except the protuberance 222 of U-shaped mask layer 220.Remove patterning photic
The method of resist layer 237 and sacrifice layer 236 be the most respectively wet etching, dry etching method or etc.
Gas ions ablution.In this embodiment, the protuberance 222 of the U-shaped mask layer 220 exposed, figure
Case photoresist oxidant layer 237 and sacrifice layer 236 are to illustrate as a example by removing simultaneously, but this
Bright it is not limited thereto.In this technical field, tool usually intellectual can determine according to processing technology demand
Remove the protuberance 222 of the U-shaped mask layer 220 exposed, patterning photoresist oxidant layer 237 with sacrificial
The sequencing of domestic animal layer 236.
Refer to Fig. 2 H, mask layer 230 is formed patterning photoresist oxidant layer 239, wherein pattern
Change photoresist oxidant layer 239 and at least cover the surface 234 of the mask layer 230 in pre-reservation region 213.
The forming method of patterning photoresist oxidant layer 239 e.g. carries out lithographic fabrication process and is formed.
Refer to Fig. 2 I, in the region beyond pre-reservation region 213, with U-shaped mask layer 240
Protuberance 242 is mask, and remove between the protuberance 242 of U-shaped mask layer 240 U-shaped covers
Mold layer 240 (that is in Fig. 2 H in U-shaped mask layer 240 bottom 244), not by U-shaped mask layer 240
Protuberance 242 mask layer 212, mask layer 216, U-shaped mask layer 220 and the material layer 210 that cover.
Simultaneously as there is mask arrangement 211, mask layer on material layer 210 in pre-reservation region 213
216, mask layer 230 and patterning photoresist 239 are as mask, therefore component masking layer 212
It is not removed with mask layer 216 and remains.Remove the protuberance 242 being positioned at U-shaped mask layer 240
Between U-shaped mask layer 240, the mask layer that do not covered by the protuberance 242 of U-shaped mask layer 240
212, mask layer 216, U-shaped mask layer 220 and the method e.g. dry etching method of material layer 210.
Additionally, remove do not covered by the protuberance 242 of U-shaped mask layer 240 mask layer 212, cover
During mold layer 216, U-shaped mask layer 220 and material layer 210, patterned mask layer 212,
Pattern also as hard mask (Hard Mask), and can be shifted by mask layer 216 and U-shaped mask layer 220
To material layer 110.According to the demand of subsequent manufacturing processes, member-retaining portion patterned material layer can be positioned at
Mask layer 212, mask layer 216 and U-shaped mask layer 220 (as shown in figure 2i) on 210, or completely
Remove mask layer 212, mask layer 216 and U-shaped mask layer 220.
From Fig. 2 H and Fig. 2 I, can be mask by the protuberance 242 of U-shaped mask layer 240, right
Material layer 210 patterns.But, the method patterning material layer 210 is not limited to figure
The mode of 2H Yu Fig. 2 I, as long as the protuberance 242 with U-shaped mask layer 240 comes material for mask
Layer 210 carries out patterning and i.e. belongs to the scope that the present invention is protected.
In the present embodiment, the width of mask arrangement 211 may be set to 3F, between mask arrangement 211
Distance may be set to 5F, mask layer 212, mask layer 216, the thickness e.g. F of mask layer 230,
And making the characteristic size being transferred to the pattern on material layer 210 is F.Certainly, the spirit of the present invention is not
It is confined to this, the parameter of above-described embodiment according to the demand of last live width Yu line-spacing, can be adjusted, respectively
Distance between the width of mask arrangement, each mask arrangement, the thickness of mask layer, patterning photoresist
The width of oxidant layer.
The width in pre-reservation region 213 can be adjusted by follow-up photoetching, etching process again.
Refer to Fig. 2 J, material layer 210 is formed patterning photoresist oxidant layer 246.Pattern photic anti-
The forming method of erosion oxidant layer 246 e.g. carries out lithographic fabrication process and is formed.Then, refer to Fig. 2 K,
With patterning photoresist oxidant layer 246 as mask, remove component masking layer 212,216,220 and part
Material layer 210.Remove the method e.g. dry etching method of portion of material layer 210.Then, figure is removed
Case photoresist oxidant layer 246.Remove the method e.g. wet type erosion of patterning photoresist oxidant layer 246
Lithography, dry etching method or plasma clean method.By the method i.e. adjustable pre-reservation region 213
Width and remove the part of unwanted portion of material layer 210.
Understand based on above-described embodiment, in above-mentioned patterning method, by using U-shaped mask layer 240
Protuberance 242 as mask, can accurately required pattern be transferred to material layer to be patterned
210。
Although disclosing the present invention in conjunction with above example, but it being not limited to the present invention, any
Art has usually intellectual, without departing from the spirit and scope of the present invention, can do some
The change permitted and retouching, therefore protection scope of the present invention should be with what the claim enclosed was defined
Accurate.
Claims (10)
1. a patterning method, including:
Material layer is provided；
Described material layer is formed multiple mask arrangement, described mask arrangement by described material layer sequentially
Including the first mask layer and the first photoresist oxidant layer；
Described material layer is conformally formed the second mask layer covering described mask arrangement；
To forming the first sacrifice layer less than on described second mask layer between described mask arrangement；
Remove described second mask layer of part and expose described first photoresist oxidant layer, with in adjacent
The first U-shaped mask layer is formed between described mask arrangement；
Remove described first photoresist oxidant layer and described first sacrifice layer；
Described first mask layer with described first U-shaped mask layer are conformally formed the 3rd mask layer, its
Described in the 3rd mask layer there is first surface and second surface, described first surface be higher than described second table
Face；
The second sacrifice layer is formed to the described second surface less than described 3rd mask layer；
Remove described 3rd mask layer of part and expose the protuberance of described first U-shaped mask layer, with in
The second U-shaped mask layer is formed between the protuberance of described first U-shaped mask layer；And
With the protuberance of described second U-shaped mask layer as mask, described material layer is patterned.
2. patterning method as claimed in claim 1, wherein carries out patterning method to described material layer
Including:
With the protuberance of described second U-shaped mask layer as mask, remove described first U-shaped mask layer
Protuberance and described second sacrifice layer；And
Remove the described second U-shaped mask layer between the protuberance of described second U-shaped mask layer,
Described first mask layer that do not covered by the protuberance of described second U-shaped mask layer, described first U-shaped
Mask layer and described material layer.
3. patterning method as claimed in claim 1, wherein forms described mask on described material layer
The step of structure includes:
Described material layer sequentially forms the first layer of mask material and described first photoresist oxidant layer；With
And
Described first layer of mask material of part is removed for mask with described first photoresist oxidant layer.
4. patterning method as claimed in claim 1, wherein said first mask layer is covered with described second
The material of mold layer is identical.
5. patterning method as claimed in claim 1, the material of wherein said 3rd mask layer is different from
The material of described first mask layer and the material of described second mask layer.
6. patterning method as claimed in claim 1, wherein said first U-shaped mask layer prominent
Portion includes rectangle with the shape of the protuberance of described second U-shaped mask layer.
7. patterning method as claimed in claim 1, wherein said first mask layer, described second covers
Mold layer includes chemical vapour deposition technique or ald respectively with the forming method of described 3rd mask layer
Method.
8. patterning method as claimed in claim 1, wherein said first sacrifice layer is second sacrificial with described
The forming method of domestic animal layer includes method of spin coating respectively.
9. patterning method as claimed in claim 1, wherein removes described second mask layer of part and shifting
Except the method for described 3rd mask layer of part includes dry etching method respectively.
10. patterning method as claimed in claim 1, wherein remove described first photoresist oxidant layer,
Described first sacrifice layer includes wet etching, dry etching method respectively with the method for described second sacrifice layer
Or plasma clean method.
Applications Claiming Priority (2)
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| TW104115557A TWI555082B (en) | 2015-05-15 | 2015-05-15 | Patterning method |
| TW104115557 | 2015-05-15 |
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| CN108962746A (en) * | 2017-05-25 | 2018-12-07 | 南亚科技股份有限公司 | patterning method |
| CN111477586A (en) * | 2019-01-23 | 2020-07-31 | 美光科技公司 | Method of forming a pattern and method of patterning a conductive structure of an integrated assembly |
| WO2023028917A1 (en) * | 2021-09-01 | 2023-03-09 | 华为技术有限公司 | Method for manufacturing self-aligned quadruple patterned semiconductor apparatus, and semiconductor apparatus |
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Also Published As
| Publication number | Publication date |
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| TWI555082B (en) | 2016-10-21 |
| US9460933B1 (en) | 2016-10-04 |
| TW201640581A (en) | 2016-11-16 |
| CN106298507B (en) | 2018-10-26 |
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Effective date of registration: 20190626 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Lijing Jicheng Electronic Manufacturing Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerflash Technology Corporation |
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