CN109856908A - A kind of mask plate, display base plate and preparation method thereof and display device - Google Patents
A kind of mask plate, display base plate and preparation method thereof and display device Download PDFInfo
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- CN109856908A CN109856908A CN201910163878.XA CN201910163878A CN109856908A CN 109856908 A CN109856908 A CN 109856908A CN 201910163878 A CN201910163878 A CN 201910163878A CN 109856908 A CN109856908 A CN 109856908A
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Abstract
The present invention provides a kind of mask plate, display base plate and preparation method thereof and display device, mask plate include light tight region, and light tight region corresponds to the channel region of display base plate.Mask plate provided by the invention; there are light tight regions; and light tight region corresponds to the channel region of display base plate; when making the active layer pattern of display base plate; channel region will not be exposed and form protective layer; in this way; in further production Source and drain metal level; a part of Source and drain metal level can be deposited on unexposed protective layer; this part Source and drain metal level can be removed with protective layer; and a possibility that making the channel region of region formation display base plate, reducing the active layer pattern of damage display base plate.
Description
Technical field
The present invention relates to field of display technology more particularly to the preparation methods of a kind of mask plate and display base plate.
Background technique
Oxide TFT (Thin Film Transistor, thin film transistor (TFT)) is by spies such as the good mobility height of its uniformity
A kind of point, it has also become current mainstream thin film transistor (TFT) technology of preparing.The semiconductor material of the active layer of existing oxide TFT is logical
Often include indium gallium zinc oxide IGZO, in back channel manufacturing process, when etching source-drain electrode figure (Source&Drain), carves
It is larger to the damage of semiconductor material to lose liquid.
Summary of the invention
The embodiment of the present invention provides a kind of mask plate, display base plate and preparation method thereof and display device, to solve to etch
When source-drain electrode figure, etching liquid is to the larger problem of the damage of semiconductor material.
In a first aspect, for making display base plate, the mask plate includes the embodiment of the invention provides a kind of mask plate
Light tight region, the light tight region correspond to the channel region of the display base plate.
Optionally, the mask plate further includes transmission region and semi-transparent region, wherein described in the transmission region is corresponding
The region that the Source and drain metal level of display base plate is etched away, the semi-transparent region correspond to the source-drain electrode figure of the display base plate
The region of shape.
Optionally, the semi-transparent region includes the first subregion and the second subregion, the light transmission of first subregion
Rate is less than the light transmittance of second subregion, and first subregion corresponds in the source-drain electrode figure, with active layer figure
The equitant region of shape, second subregion are corresponded in the source-drain electrode figure, are not overlapped with the active layer pattern
Region.
Optionally, the light transmittance in the semi-transparent region is 10% to 90%.
Second aspect, the embodiment of the invention provides a kind of production methods of display base plate, comprising:
Using mask plate described in any of the above item, active layer pattern is formed on underlay substrate, and in the display base
The channel region of plate forms protective layer；
Source-drain electrode figure is formed on the underlay substrate for forming matcoveredn；
The protective layer is removed, so that the material falls back of source-drain electrode corresponding with the channel region.
Optionally, described that active layer pattern is formed on underlay substrate, and formed in the channel region of the display base plate
Protective layer, comprising:
One underlay substrate is provided；
Semiconductor layer is formed on the underlay substrate, and coats photoresist on the semiconductor layer；
Using above-mentioned Section 2 into Section 4 any mask plate to be coated on the semiconductor layer on photoresist into
Row exposes and develops, wherein the photoresist after development forms the first reserved area corresponding with the light tight region of the mask plate
The corresponding first removal region of the transmission region of domain and the mask plate and corresponding with the semi-transparent region of the mask plate the
A part retains region, and first reservation region corresponds to the channel region of the display base plate, and described first retains region
The photoresist of reservation forms the protective layer, and the semiconductor layer that first removal region corresponds to the display base plate is etched away
Region, the first part retains region and corresponds to the active layer pattern other than channel region；
Part of the semiconductor layer not covered with photoresist is etched away, so that the semiconductor layer forms active layer figure
Shape, the region not covered with photoresist include first removal region.
It is optionally, described that source-drain electrode figure is formed on the underlay substrate for forming matcoveredn, comprising:
The photoresist that the first part retains region is removed by dry method；
Source and drain metal level is formed on the underlay substrate, wherein the part of the Source and drain metal level is formed in the guarantor
On sheath；
Photoresist is coated in the Source and drain metal level；
Using above-mentioned Section 2 into Section 4 any mask plate to be coated on the Source and drain metal level on photoresist
It is exposed and develops, wherein the photoresist after development forms corresponding with the light tight region of the mask plate second and retains
The transmission region of region and the mask plate corresponding second removal region and corresponding with the semi-transparent region of the mask plate
Second part retains region, and second reservation region corresponds to the channel region of the display base plate, second removal region
The region that the Source and drain metal level of the corresponding display base plate is etched away, the second part retain region and correspond to the display base
The source-drain electrode figure of plate；
Part of the Source and drain metal level not covered with photoresist is etched away, to form source-drain electrode figure.
Optionally, in the case where at least part of the source-drain electrode figure is not Chong Die with the active layer pattern,
The photoetching of any mask plate to being coated on the semiconductor layer into Section 4 using above-mentioned Section 2
Glue is exposed and develops, comprising:
The photoresist being coated on the semiconductor layer is exposed and is shown using mask plate described in above-mentioned Section 3
Shadow, wherein being formed by first part to retain region includes that first part corresponding with first subregion retains subregion
Retain subregion with second part corresponding with second subregion；
It is described etch away the semiconductor layer not covered with the part of photoresist before, further includes:
The photoresist that the second part retains subregion is removed by dry method；
It is described to etch away part of the semiconductor layer not covered with photoresist, comprising:
It etches away the first removal region and the second part retains the corresponding semiconductor layer of subregion.
The third aspect, the embodiment of the invention also provides a kind of display base plates, pass through display base described in any of the above item
The production method of plate makes to obtain.
Fourth aspect, the embodiment of the invention also provides a kind of display devices, including above-mentioned display base plate.
Mask plate provided by the invention, there are light tight regions, and light tight region corresponds to the channel region of display base plate,
When making the active layer pattern of display base plate, channel region will not be exposed and be formed protective layer, in this way, further making
When Source and drain metal level, a part of Source and drain metal level can be deposited on unexposed protective layer, this part Source and drain metal level can be with
Protective layer removal, and the region is made to form the channel region of display base plate, reduce the active layer pattern of damage display base plate
Possibility.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, needed in being described below to the embodiment of the present invention
Attached drawing to be used is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention,
For those of ordinary skill in the art, without any creative labor, it can also obtain according to these attached drawings
Take other attached drawings.
Fig. 1 is a kind of structural schematic diagram of mask plate in first embodiment of the invention；
Fig. 2 is the structural schematic diagram of another mask plate in first embodiment of the invention；
Fig. 3 is the A-B of mask plate shown in Fig. 2 to cross-sectional view；
Fig. 4 is the structural schematic diagram of another mask plate in first embodiment of the invention；
Fig. 5 is the C-D of mask plate shown in Fig. 4 to cross-sectional view；
Fig. 6 is a kind of flow chart of the production method of display base plate in second embodiment of the invention；
Fig. 7 is the coating schematic diagram of photoresist on semiconductor layer in second embodiment of the invention；
Fig. 8 is a kind of exposure schematic diagram of photoresist on semiconductor layer in second embodiment of the invention；
Fig. 9 is a kind of etching schematic diagram of semiconductor layer in second embodiment of the invention；
Figure 10 is the photoresist lift off schematic diagram in second embodiment of the invention in a kind of active layer pattern；
Figure 11 is a kind of schematic diagram of Source and drain metal level in second embodiment of the invention；
Figure 12 is the photoresist coating schematic diagram in second embodiment of the invention in a kind of Source and drain metal level；
Figure 13 is the photoresist exposure schematic diagram in second embodiment of the invention in a kind of Source and drain metal level；
Figure 14 is a kind of etching schematic diagram of Source and drain metal level in second embodiment of the invention；
Figure 15 is a kind of structural schematic diagram of display base plate made in second embodiment of the invention；
Figure 16 is the E-F of Figure 15 to cross-sectional view；
Figure 17 is the structural schematic diagram of another display base plate made in second embodiment of the invention；
Figure 18 is another exposure schematic diagram of photoresist on semiconductor layer in second embodiment of the invention；
Figure 19 is the removing schematic diagram of photoresist on semiconductor layer in second embodiment of the invention；
Figure 20 is another etching schematic diagram of semiconductor layer in second embodiment of the invention；
Figure 21 is the photoresist lift off schematic diagram in second embodiment of the invention in another active layer pattern；
Figure 22 is the schematic diagram of another Source and drain metal level in second embodiment of the invention；
Figure 23 is the photoresist coating schematic diagram in second embodiment of the invention in another Source and drain metal level；
Figure 24 is the photoresist exposure schematic diagram in second embodiment of the invention in another Source and drain metal level；
Figure 25 is the etching schematic diagram of another Source and drain metal level in second embodiment of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, those of ordinary skill in the art's acquired every other implementation without creative efforts
Example, shall fall within the protection scope of the present invention.
First embodiment:
The present invention provides a kind of mask plates 100 (mask), for making display base plate.
As shown in Figure 1, in one embodiment, which includes light tight region 110, light tight region 110 is right
Answer the channel region of display base plate.
Due to the presence of the light tight region 110, when making the exposure technology of active layer pattern 221, with channel region
Corresponding region will not be exposed, in this way, in further production Source and drain metal level 230, a part of 230 meeting of Source and drain metal level
Be deposited on it is unexposed and formed protective layer on, after this part Source and drain metal level 230 is removed with protective layer, form the region
The channel region of display base plate, reduce damage display base plate active layer pattern 221 a possibility that
Further, as shown in Figures 2 and 3, mask plate 100 further includes transmission region 120 and semi-transparent region 130,
In, the region that the Source and drain metal level 230 of the corresponding display base plate of transmission region 120 is etched away, the corresponding source and drain in semi-transparent region 130
The region of electrode pattern 231.
Wherein, the light transmittance of transmission region 120 should be high as far as possible, and the light transmittance in semi-transparent region 130 then between
Between the light transmittance of transmission region 120 and the light transmittance of light tight region 110.For example, the light transmittance in semi-transparent region 130 can be with
It is 10% to 90%, herein, the light transmittance in semi-transparent region 130 may also refer to the absolute value of light transmittance, be also possible to opposite
In the relative value of 120 light transmittance of transmission region.It is said so that the light transmittance in semi-transparent region 130 is 50% as an example in the present embodiment
It is bright.
In this way, due to the transmission region 120 of mask plate 100, the light transmittance in semi-transparent region 130 and light tight region 110
Different, in exposure, depth of exposure is also different.
Further, as shown in Figure 4 and Figure 5, in a specific embodiment, semi-transparent region 130 includes the first son
Region 131 and the second subregion 132, light transmittance of the light transmittance less than the second subregion 132 of the first subregion 131, the first son
In 131 corresponding source drain electrode patterns 231 of region, with the equitant region of active layer pattern 221,132 corresponding source of the second subregion
In drain electrode patterns 231, not with the equitant region of active layer pattern 221.
Mask plate 100 in the specific implementation be applied at least part of source-drain electrode figure 231 not with active layer figure
The case where shape 221 is overlapped.At this point, since the first subregion 131 of mask plate 100 and the light transmittance of the second subregion 132 are different,
So the depth of exposure in region corresponding to the first subregion 131 and the second subregion 132 is also different.
Further, the light transmittance of the first subregion 131 can be the 10% of the light transmittance of the second subregion 132 to
90%, so that the depth of exposure in region corresponding to the first subregion 131 and the second subregion 132 has differences.The present embodiment
In with the light transmittance of the first subregion 131 for 25%, the light transmittance of the second subregion 132 illustrates for being 50%.
The specifically used mode of the mask plate 100 will will be described further in a second embodiment below.
Second embodiment:
The present invention provides a kind of production methods of display base plate.
In one embodiment, as shown in fig. 6, the production method of the display base plate includes:
Step 201: forming active layer pattern on underlay substrate, and formed and protected in the channel region of the display base plate
Layer.
In the step of forming active layer pattern 221 in the present embodiment, used mask plate 100 is any of the above-described kind of exposure mask
Version 100, the i.e. mask plate 100 include at least light tight region 110, and the channel of the corresponding display base plate of the light tight region 110
Region.
It is by being lithographically formed active layer pattern 221 in the present embodiment, is upper in the mask plate 100 that exposure process uses
In the case where stating mask plate 100, due to the presence of light tight region 110, which can not
It is exposed, therefore the photoresist 241 that should be eliminated in exposure process originally is remained, and formed and protected in channel region
Sheath.
Step 202: source-drain electrode figure is formed on the underlay substrate for forming matcoveredn.
During making source-drain electrode figure 231, due to the presence of protective layer, the material meeting of a part of source-drain electrode
Deposition is on the protection layer.
Step 203: the protective layer is removed, so that the material falls back of source-drain electrode corresponding with the channel region.
When removing protective layer, the material for depositing source-drain electrode on the protection layer can also be removed with protective layer, in this way, by
It is the channel region of display base plate in the corresponding region of protective layer, so the material of the source-drain electrode of deposition on the protection layer is with guarantor
Sheath is removed, and is also equivalent to eliminate the Source and drain metal level 230 of channel region, to form the channel of display base plate.
In this way, using the mask plate due to there is light tight region 110 corresponding with channel region on mask plate 100
When 100 production active layer pattern 221, the protection materials in region corresponding with channel region will not be exposed, to retain
Protective layer is formed, in this way, a part of Source and drain metal level 230 can be deposited on protection in further production Source and drain metal level 230
On layer, after this part Source and drain metal level 230 is removed with protective layer, it can make to form channel on display base plate, and in manufacturing process
Will not active layer pattern 221 to display base plate the damage that may cause of semiconductor material.
Further, in a specific embodiment, above-mentioned steps 201 specifically includes the following steps:
Step 2011: a underlay substrate is provided.
Step 2012: forming semiconductor layer on the underlay substrate, and coat photoresist on the semiconductor layer.
As shown in fig. 7, existing various underlay substrates 210 can be selected in the underlay substrate 210 in the present embodiment, in substrate base
On plate 210 formed semiconductor layer 220 before be also possible that some other steps, for example including but be not limited to form grid 280
(Gate), gate insulating layer 290 (Gate Insulator, GI) etc., the production method for specifically referring to existing display base plate,
It is not further qualified and describes herein.
The technical solution of the present embodiment essentially consists in during etching forms source-drain electrode figure 231, reduces etching liquid
It is damaged for caused by the semiconductor material of active layer pattern 221, and etching liquid damages relatively caused by the materials such as IGZO
Greatly, so the technical solution of the present embodiment mainly for the material in active layer pattern 221 includes IGZO etc. by etching liquid
The case where damaging biggish material.
Obviously, the material of semiconductor layer 220 is also possible that other materials, such as amorphous silicon, polysilicon, organic material
Deng etching liquid is relatively small to the damage of these materials, but the scheme of the present embodiment is equally applicable.
The material of protective layer in the present embodiment includes photoresist 241, and the thickness of photoresist 241 can according to circumstances be set
It is fixed, such as the thickness of photoresist 241 can be set to 0.5 micron to 5 microns, with photoresist 241 in the present embodiment
With a thickness of illustrating for 3 microns, it is clear that be not limited thereto when actual implementation.
The detailed process for forming semiconductor layer 220 and coating photoresist 241 can refer to existing way, not make herein further
It limits and describes.
Step 2013: the photoresist 241 being coated on the semiconductor layer 220 being exposed and shown using mask plate
Shadow.
As shown in figure 8, mask plate 100 used in exposure process is above-mentioned Section 2 any exposure mask into Section 4
Version 100, i.e., used mask plate 100 include at least the light tight region 110 for corresponding to channel region and above-mentioned transmission region
120 and semi-transparent region 130.After being exposed using the mask plate 100 to the photoresist 241 on semiconductor layer 220, make
Photoresist 241 develops.
Since the light transmittance of each region on mask plate 100 is different, thus the photoresist 241 after development will form with it is each
The corresponding multiple regions in region.
As shown in Figure 7, Figure 8 and Figure 9, the photoresist 241 after development at least will form the first reservation region 241A, first
Code insurance stays region 241B and first to remove region 241C.
First reservation region 241A corresponds to the light tight region 110 of mask plate 100, it is understood that for corresponding display base plate
Channel region, since the corresponding photoresist 241 of light tight region 110 can not expose, it is possible to think the light tight region
110 corresponding photoresists 241 are almost kept down, and the thickness of the photoresist 241 in the region is still 3 microns.It protects
The photoresist 241 stayed forms protective layer, can protect the active layer pattern 221 of channel region.
First part retains the semi-transparent region 130 that region 241B corresponds to mask plate 100, it is understood that for corresponding channel
Active layer pattern 221 other than region.It, should in exposure process since the region corresponds to the semi-transparent region 130 of mask plate 100
The depth of exposure in region is lower than the corresponding part of transmission region 120, but is above the corresponding part of light tight region 110.
In this way, the photoresist 241 that first part retains region 241B remains to retain a part and is covered on semiconductor layer 220
On.Referring to Fig. 8, the dashed boundaries part that first part retains in the 241B of region represents the portion removed after photoresist 241 develops
Point, and solid-line boundary part represents the part that photoresist 241 remains.It is about with the thickness of remainder in the present embodiment
Illustrate for 0.8 micron.
First removal region 241C corresponds to the transmission region 120 of mask plate 100, it is understood that for corresponding display base plate
The region that semiconductor layer 220 is etched away, the region due to exposing completely, so photoresist 241 is completely removed after development,
And the part for making semiconductor layer 220 be located at the region is exposed.
In Fig. 8 first removal region 241C dashed boundaries represent the corresponding photoresist 241 in the region after development can be complete
Full removal, the semiconductor layer 220 of covering will be exposed.
Step 2014: etching away the semiconductor layer in the region not covered with photoresist.
As shown in figure 9, in next etching operation, due on the corresponding semiconductor layer 220 of the first removal region 241C
Not covered with photoresist 241, so semiconductor etching region 222 corresponding to the first removal region 241C can be etched away, the
One, which retains region 241A and first part, retains the corresponding semiconductor layer 220 of region 241B due to the protective effect of photoresist 241,
It can remain after etching.The semiconductor layer 220 remained then forms active layer pattern 221.
In this way, semiconductor layer 220 has just been made into active layer pattern 221.
Further, in a specific embodiment, above-mentioned steps 202 specifically include:
Step 2021: the photoresist that the first part retains region is removed by dry method.
After having made active layer pattern 221, need to continue to make source-drain electrode figure 231, so needing to remove active
The photoresist covered on layer pattern 221.
As shown in Figure 10, photoresist 241 is removed in first part reserved area in such a way that dry method is removed in the present embodiment
The remaining part domain 241B.
It should be understood that may be such that light when removing the photoresist of first part reservation region 241B by dry method
A part that photoresist 241 is located at the first reservation region 241A is stripped simultaneously, since photoresist 41 is located at the part of channel region
Thickness is thicker, so can ensure that at least part of the first reservation region 241A is retained in channel region in the present embodiment, and
Form protective layer.
As shown in Figure 10, the dashed boundaries that first part retains region 241B in Figure 10 represent photoresist 241 and are located at the area
The part in domain has been fully exfoliated；The dashed boundaries of first reservation region 241A represent the portion that photoresist 241 is located at the region
Divide the boundary before being stripped, the solid-line boundary of the first reservation region 241A represents photoresist 241 and is partially stripped in the region
Boundary afterwards.In the present embodiment by taking the photoresist that retains in channel region is with a thickness of 2 microns as an example.
Step 2022: forming Source and drain metal level on the underlay substrate.
After removing first part retains the photoresist of region 241B, source and drain gold is continuously formed on underlay substrate 210
Belong to layer 230.As shown in figure 11, since channel region is there are still protective layer, which is equivalent to a self positioning structure, source and drain gold
Belonging to the part corresponding with channel region of layer 230 will form on the first reservation remaining part region 241A, that is, be formed in guarantor
On sheath.
Step 2023: coating photoresist in the Source and drain metal level.
As shown in figure 12, the specific steps and mode of the photoresist 242 coated in Source and drain metal level 230 can refer to existing
Technology is not further qualified and describes herein.
It should be understood that the photoresist 242 coated in the first reservation region 241A and step 2032 should be no boundary
Line, but coated in the first reservation region 241A and Source and drain metal level 230 in order to make it easy to understand, still being remained in relevant drawings
Photoresist 242 between boundary.
Step 2024: the photoresist being coated in the Source and drain metal level is exposed and is developed.
Herein expose used in mask plate 100 be above-mentioned second into Section 4 any mask plate, the i.e. mask plate
100 include at least the light tight region 110 of corresponding channel region and above-mentioned transmission region 120 and semi-transparent region 130.
Similar with above-mentioned exposure and imaging process, as shown in figure 13, the photoresist 242 after this time developing at least will form
Second retains region 242A, second part retains the removal of region 242B and second region 242C.
Second reservation region 242A corresponds to the light tight region 110 of mask plate, which also corresponds to the channel of display base plate
Region.
Second part retains the semi-transparent region 130 that region 242B corresponds to mask plate, and the photoresist 242 in the region is developing
After be partially removed.
Second removal region 242C corresponds to the transmission region 120 of mask plate 100, the photoresist in this region after development by
It completely removes, so that the corresponding Source and drain metal level 230 in the region is exposed.
Step 2025: part of the Source and drain metal level not covered with photoresist is etched away, to form source-drain electrode figure.
As shown in figure 14, when performing etching to Source and drain metal level 230, second retains region 242A and second part reservation
242B corresponding Source and drain metal level 230 in region is still covered with photoresist, so will not be etched away, the second removal region 242C's
Photoresist has been removed, and the corresponding Source and drain metal level 230 in the region exposes out, so in etching process,
The corresponding source and drain metal material etch areas 232 of second removal region 242C can be etched away, to make 230 shape of Source and drain metal level
At source-drain electrode figure 231.
As shown in Figure 15 and Figure 16,203 remaining whole photoresists are removed through the above steps, is then located at the first reserved area
230 material of Source and drain metal level of channel region corresponding to the reservation of domain 241A and second region 242A can be removed with photoresist,
And channel region is exposed.
It should be understood that mask plate 100 used in production active layer pattern 221 and production source-drain electrode figure 231
Used mask plate 100 can be different mask plate 100, as long as each mask plate 100 includes a corresponding display base
The light tight region 110 of the channel region of plate.
It is then production active layer pattern 221 and production source-drain electrode figure 231 in a preferable specific embodiment
Using same mask plate 100, to play the effect of the cost of manufacture of simplified technique and reduction mask plate 100.
When making active layer pattern 221 and production source-drain electrode figure 231 using same mask plate 100, mask plate 100
The corresponding above-mentioned first part of translucent area 130 retain region 241B and second part to retain region 242B be actually same
One region, and it is corresponding be source-drain electrode figure 231 region, in this way, as shown in figure 15, other than channel region, this is aobvious
Show in substrate active layer pattern 221 there is source-drain electrode figure 231.
Further, as shown in figure 17, for some display panels, a part of source-drain electrode figure 231 is not
It is overlapped with active layer pattern 221.
Before the step of exposure of production active layer pattern 221, the production method of the display base plate and above-mentioned specific embodiment party
The manufacturing process of display base plate is essentially identical in formula, and the thickness of photoresist 241 can be in 0.5 to 5 microns, the present embodiment
Illustrated for 4 microns, detailed process can refer to Fig. 7 and foregoing description, and details are not described herein again.
In this specific embodiment, as shown in figure 18, the main distinction with the manufacturing process of above-mentioned display base plate is,
In the exposure process of production active layer pattern 221, need using mask plate described in above-mentioned Section 3, it is described to being coated on
Photoresist on semiconductor layer 220 is exposed.
Mask plate described in above-mentioned Section 3 refers specifically to Fig. 4 and semi-transparent region 130 shown in fig. 5 includes above-mentioned
The mask plate 100 of first subregion 131 and the second subregion 132.
After being exposed and developing with the photoresist on semiconductor layer 220 using 100 pairs of mask plate coatings, photoresist
It is formed and the first subregion 131 corresponding first part reservation subregion 2411B and second corresponding with the second subregion 132
Code insurance stays subregion 2412B.
As shown in figure 18, the light transmittance due to the light transmittance of the first subregion 131 less than the second subregion 132, so the
The depth of exposure that a part retains the photoresist 241 of subregion 2411B is relatively small, and after development, first part retains sub-district
The thickness for the photoresist 241 that domain 2411B is remained is also just bigger, says so that the photoresist 241 in the region is with a thickness of 2 microns as an example
Bright, the thickness that second part retains the photoresist that subregion 2412B is remained is then relatively small, for instance it can be possible that 1 micron.And
The photoresist thickness of channel region does not almost change, is about 4 microns.
Further, before step 2014, further includes:
The photoresist that the second part retains subregion is removed by dry method.
As shown in figure 19, by a dry method stripping process, photoresist 241 can be removed and be located at second part reservation sub-district
The part of domain 2412B is protected simultaneously it is also possible to which first part is made to retain a part of photoresist 241 of subregion 2411B and first
A part of photoresist 241 of region 241A is stayed to be removed.In this way, the photoresist 241 that first part retains subregion 2411B is remaining
About 1 micron of thickness, the remaining about 3 microns of thickness of the photoresist 241 of channel region.
Since the photoresist that first part reservation subregion 2411B is remained is relatively more, so being shelled in a dry method
From later, first part retains subregion 2411B and remains to retain a part of photoresist.
As shown in figure 20, next, etching away the first removal region 241C and second part reservation subregion
The corresponding semiconductor layer 220 of 2412B.
Since the photoresist that second part retains subregion 2412B has been removed, so the corresponding semiconductor in the region
Layer 220 also exposes out, as shown in figure 20, when being performed etching to semiconductor layer 220, can by the first removal region 241C and
Second part retains the corresponding semiconductor etching region 222 subregion 2412B and etches away, and semiconductor layer 220 is made to form active layer
Figure 221.
Next, as shown in figure 21, removing the photoresist 242 that first part retains subregion 2411B, channel by dry method
A part of the photoresist 241 in region is also stripped therewith, about 2 microns of thickness of thickness of remaining photoresist 241.When photoresist 241
Positioned at first part retain subregion 2411B part be stripped after, it is similar with step shown in Fig. 10, be actually accomplished
Production to the protective layer of channel region.
Further, as shown in figure 22, Source and drain metal level 230 is formed；As shown in figure 23, it is applied in Source and drain metal level 230
Cover photoresist 242；As shown in figure 24, the photoresist 242 being coated in Source and drain metal level 230 is exposed using mask plate 100；Such as
Shown in Figure 25, after developing, source and drain metal material etch areas 232 is etched away, form source-drain electrode figure 231；Finally exist
Photoresist 242 used in the photoresist 241 and production source-drain electrode figure 231 of remaining channel region is removed, can be obtained
Display base plate as shown in figure 16.
The production method that the above process can refer to above-mentioned steps 2021 to the source-drain electrode figure in step 2025, herein not
It repeats again.
In this way, the part corresponding with the first subregion 131 of mask plate 100 of source-drain electrode figure 231, below there are
Active layer figure 221, and the part corresponding with the second subregion 132 of mask plate 100 of source-drain electrode figure 231, below then not
There are active layer patterns 221.
3rd embodiment:
The embodiment of the invention also provides a kind of display base plates, pass through the production side of display base plate described in any of the above item
Method makes to obtain.
Since the display base plate of the present embodiment is made to obtain by above method, the technical solution of the present embodiment is at least
Above-mentioned whole technical effects are able to achieve, details are not described herein again.
Fourth embodiment:
The embodiment of the invention also provides a kind of display devices, including above-mentioned display base plate.
Since the technical solution of the present embodiment includes whole technical solutions of above-described embodiment, at least it is able to achieve above-mentioned
Whole technical effects, details are not described herein again.
More than, only a specific embodiment of the invention, but scope of protection of the present invention is not limited thereto, and it is any to be familiar with
Those skilled in the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all cover
Within protection scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (10)
1. a kind of mask plate, for making display base plate, which is characterized in that the mask plate includes light tight region, it is described not
Transmission region corresponds to the channel region of the display base plate.
2. mask plate as described in claim 1, which is characterized in that the mask plate further includes transmission region and semi-opaque region
Domain, wherein the transmission region corresponds to the region that the Source and drain metal level of the display base plate is etched away, the semi-transparent region
The region of the source-drain electrode figure of the corresponding display base plate.
3. mask plate as claimed in claim 2, which is characterized in that the semi-transparent region includes the first subregion and the second son
Region, the light transmittance of first subregion are less than the light transmittance of second subregion, described in first subregion is corresponding
In source-drain electrode figure, with the equitant region of active layer pattern, second subregion is corresponded in the source-drain electrode figure,
Not with the equitant region of the active layer pattern.
4. mask plate as claimed in claim 2 or claim 3, which is characterized in that the light transmittance in the semi-transparent region be 10% to
90%.
5. a kind of production method of display base plate characterized by comprising
Using mask plate described in any one of any one of claims 1 to 44, active layer pattern is formed on underlay substrate, and described
The channel region of display base plate forms protective layer；
Source-drain electrode figure is formed on the underlay substrate for forming matcoveredn；
The protective layer is removed, so that the material falls back of source-drain electrode corresponding with the channel region.
6. the production method of display base plate as claimed in claim 5, which is characterized in that it is described formed on underlay substrate it is active
Layer pattern, and protective layer is formed in the channel region of the display base plate, comprising:
One underlay substrate is provided；
Semiconductor layer is formed on the underlay substrate, and coats photoresist on the semiconductor layer；
The photoresist being coated on the semiconductor layer is exposed using mask plate described in any one of claim 2 to 4
Light simultaneously develops, wherein photoresist after development formed corresponding with the light tight region of the mask plate first retain region and
The transmission region of the mask plate corresponding first removal region and first corresponding with the semi-transparent region of the mask plate
Code insurance stays region, and first reservation region corresponds to the channel region of the display base plate, and described first retains region reservation
Photoresist form the protective layer, first removal region corresponds to the area that the semiconductor layer of the display base plate is etched away
Domain, the first part retain region and correspond to the active layer pattern other than channel region；
Part of the semiconductor layer not covered with photoresist is etched away, so that the semiconductor layer forms active layer pattern, institute
Stating the region not covered with photoresist includes first removal region.
7. the production method of display base plate as claimed in claim 6, which is characterized in that described to be formed described in matcoveredn
Source-drain electrode figure is formed on underlay substrate, comprising:
The photoresist that the first part retains region is removed by dry method；
Source and drain metal level is formed on the underlay substrate, wherein the part of the Source and drain metal level is formed in the protective layer
On；
Photoresist is coated in the Source and drain metal level；
The photoresist being coated in the Source and drain metal level is carried out using mask plate described in any one of claim 2 to 4
Expose and develop, wherein photoresist after development formed the second reservation corresponding with the light tight region of mask plate region,
And the transmission region of the mask plate corresponding second removes region and the semi-transparent region corresponding second with the mask plate
Part retains region, and second reservation region corresponds to the channel region of the display base plate, and second removal region is corresponding
The region that the Source and drain metal level of the display base plate is etched away, the second part retain region and correspond to the display base plate
Source-drain electrode figure；
Part of the Source and drain metal level not covered with photoresist is etched away, to form source-drain electrode figure.
8. the production method of display base plate as claimed in claim 6, which is characterized in that the source-drain electrode figure at least
In the case that a part is not Chong Die with the active layer pattern,
It is described using mask plate described in any one of claim 2 to 4 to be coated on the semiconductor layer on photoresist into
Row exposes and develops, comprising:
The photoresist being coated on the semiconductor layer is exposed and is developed using mask plate as claimed in claim 3,
In, be formed by first part retain region include corresponding with first subregion first part retain subregion and with institute
It states the corresponding second part of the second subregion and retains subregion；
It is described etch away the semiconductor layer not covered with the part of photoresist before, further includes:
The photoresist that the second part retains subregion is removed by dry method；
It is described to etch away part of the semiconductor layer not covered with photoresist, comprising:
It etches away the first removal region and the second part retains the corresponding semiconductor layer of subregion.
9. a kind of display base plate, which is characterized in that pass through the production side of display base plate described in any one of claim 5 to 8
Method makes to obtain.
10. a kind of display device, which is characterized in that including display base plate as claimed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910163878.XA CN109856908A (en) | 2019-03-05 | 2019-03-05 | A kind of mask plate, display base plate and preparation method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910163878.XA CN109856908A (en) | 2019-03-05 | 2019-03-05 | A kind of mask plate, display base plate and preparation method thereof and display device |
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| CN109856908A true CN109856908A (en) | 2019-06-07 |
Family
ID=66899877
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910163878.XA Pending CN109856908A (en) | 2019-03-05 | 2019-03-05 | A kind of mask plate, display base plate and preparation method thereof and display device |
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| CN (1) | CN109856908A (en) |
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| CN114038737A (en) * | 2021-08-17 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Mask, light-emitting device and manufacturing method thereof |
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