CN106711017B - Method for depositing metal features using photoresist - Google Patents
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- CN106711017B CN106711017B CN201510425972.XA CN201510425972A CN106711017B CN 106711017 B CN106711017 B CN 106711017B CN 201510425972 A CN201510425972 A CN 201510425972A CN 106711017 B CN106711017 B CN 106711017B
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
The invention discloses a method for depositing metal configuration by using photoresist, which comprises the following steps: coating a photoresist on the surface of the substrate; sequentially carrying out baking, exposure, baking and development treatment on the base material coated with the photoresist, wherein the included angle between the side wall of the photoresist pattern obtained after development and the surface of the base material is between 80 degrees and 100 degrees; depositing metal on the surface of the photoresist pattern after development treatment, wherein the metal falls on the surface of the base material at the position of the photoresist opening; removing the metal on the surface of the photoresist; and a step of removing the photoresist. So as to overcome the problem that the width of the bottom of the metal electrode or the metal wire is far larger than that of the top.
Description
Technical Field
The present invention relates to the field of semiconductors, and in particular, to a method for depositing metal features using photoresist.
Background
There are various processes for fabricating metal features, one of which is a lift-Off process using an inverted trapezoidal negative photoresist, known as L ift Off.
In the existing stripping process, the manufacturing process of the metal configuration is as follows: (1) the negative photoresist is coated on the surface of the substrate, and then the groove or other shapes needing wiring are made into a pattern through the steps of baking, exposing, baking, developing and the like. It is required in this step that the photoresist in the photoresist pattern must have an inverted step shape, as shown in fig. 1, and the chamfer angle a is generally between 70 ° and 80 °. (2) Metal is deposited onto the surface of the photoresist pattern by evaporation, sputtering, chemical vapor deposition or other methods, and falls onto the substrate surface at the locations of the photoresist openings. (3) Soaking with proper agent to strip the photoresist from the surface of the substrate, the metal on the photoresist surface is stripped together, and the metal falling on the substrate surface forms the metal configuration.
After step (1) of the conventional stripping process, it is sometimes necessary to remove a thin film in the photoresist opening area by using an etchant, such as boe (buffered Oxide etch) to etch away a thin layer of silicon dioxide (SiO 2). During this etching step, side etching, in which an etching solution penetrates from the junction between the resist and the surface of the substrate to below the resist pattern, is likely to occur. This side-etch phenomenon is associated with the inverse-trapezoidal shape of the resist pattern because the resist is not fully cured at the portions in contact with the substrate surface.
Before step (3) of the conventional stripping process, it is sometimes necessary to use an adhesive tape or other method to separate and recover the noble metal on the surface of the photoresist, and simultaneously expose the photoresist to facilitate the stripping process of step (3).
At the heart of the existing stripping process, the photoresist pattern must be inverse-trapezoidal (see fig. 1). The first purpose of the inverse trapezoidal shape is to allow the agent to contact the side of the photoresist pattern, particularly where the photoresist contacts the substrate surface, during stripping, thereby releasing the photoresist from the substrate surface. In this stripping process, the photoresist does not have to be soluble in the stripping agent, and can be stripped. The second purpose of the reverse stair-step pattern is to break the metal that falls on the surface of the substrate from the metal on the surface of the photoresist pattern. It should be noted that the inverse gradient pattern not only increases the difficulty of modulating the photoresist formulation, but also degrades other properties of the photoresist, such as the degree of cross-linking and the degree of resolution, compared to a vertical pattern photoresist.
The inverse ladder pattern is a characteristic of a negative photoresist, and therefore, a positive photoresist is not suitable for a lift-off process using an inverse ladder photoresist.
For example, a film having no photosensitivity is coated on the surface of the substrate, i.e., it shows isotropy when dissolved in a developer, which is generally called L OR (L if Off Resist), and then a general photoresist is coated, and after exposure and development, a pattern as shown in FIG. 2 appears.
In the conventional lift-off process, the thickness of the photoresist must be greater than that of the metal feature, and in general, the thickness of the photoresist is 2 to 3 times the thickness of the metal electrode or wiring. For example, if the thickness of the evaporated, sputtered or cvd metal is to reach 1.2 microns, the thickness of the photoresist pattern is between 2.4 microns and 3.6 microns. Otherwise, the metal dropped on the surface of the substrate adheres to the metal on the surface of the resist pattern. After adhesion, metal residue is caused and the stripping difficulty is increased.
In the existing stripping process, because the thickness of the photoresist is far greater than that of the metal configuration, metal is easily attached to the side wall of the photoresist pattern, and metal residue is generated after photoresist stripping. As shown in fig. 3, the gold electrode is manufactured by the conventional lift-off process, and the gold residue on the edge is very obvious.
In prior art stripping processes, three problems are often encountered. First, side corrosion is likely to occur during etching before evaporation, sputtering or chemical vapor deposition of metal because of the inverted trapezoid shape. Second, the inverse trapezoidal shape of the photoresist results in the bottom width of the metal electrode or metal wire being much larger than the top width, as shown in fig. 4, the bottom of the gold wire manufactured by the conventional lift-off process is significantly wider than the top. Third, metal residue is easily generated (see fig. 3).
Disclosure of Invention
The present invention is directed to solving the above problems by providing a method for depositing metal features by using photoresist to overcome the problem that the width of the bottom of the metal electrode or metal wire is much larger than the width of the top.
In order to achieve the purpose, the invention adopts the technical scheme that:
a method of depositing a metal feature using a photoresist, comprising:
coating a photoresist on the surface of the substrate;
sequentially carrying out baking, exposure, baking and development treatment on the base material coated with the photoresist, wherein the included angle between the side wall of the photoresist pattern obtained after development and the surface of the base material is between 80 degrees and 100 degrees;
depositing metal on the surface of the photoresist pattern after development treatment, wherein the metal falls on the surface of the base material at the position of the photoresist opening;
removing the metal on the surface of the photoresist;
and
and removing the photoresist.
Preferably, after the steps of baking, exposing, baking and developing the substrate coated with the photoresist are sequentially performed, the method further comprises the step of corroding a thin layer on the surface of the substrate at the opening of the photoresist after the developing treatment.
Preferably, the side wall of the photoresist pattern obtained after the development forms an angle between 85 ° and 95 ° with the substrate surface.
Preferably, the included angle between the sidewall of the photoresist pattern obtained after the development and the surface of the substrate is 90 °.
Preferably, the photoresist pattern after the development treatment has a thickness within 40% of the thickness of the deposited metal.
Preferably, the thickness of the photoresist is equal to or less than the thickness of the deposited metal.
Preferably, in the step of sequentially performing baking, exposure, baking and development on the substrate coated with the photoresist, the exposure light source is one or a mixture of visible light, 436 nm wavelength light, 360 nm wavelength light, 248 nm wavelength light and 193 nm wavelength light, the exposure mode is projection, contact or proximity, and the developer is alkaline solution or organic solvent.
Preferably, the metal is deposited by methods including, but not limited to, evaporation, sputtering, and chemical vapor deposition.
Preferably, the photoresist is removed, specifically, the photoresist is dissolved and removed by soaking in a reagent;
or/and
when the photoresist is dissolved and removed by soaking with a reagent, an auxiliary method of heating or ultrasonic oscillation is adopted.
Preferably, the metal on the surface of the photoresist is removed by using an adhesive tape for sticking before the soaking of the reagent;
or/and
the steps of soaking and sticking the reagent are repeated.
The technical scheme of the invention has the following beneficial effects:
according to the technical scheme of the invention, the included angle between the side wall of the photoresist pattern and the surface of the substrate is limited between 80 degrees and 100 degrees, so that the side wall of the photoresist pattern is almost vertical to the surface of the substrate, and the bottom width and the top width of the metal electrode or the metal wire of the metal configuration are about the same, as shown in FIG. 7. And the included angle between the side wall of the photoresist pattern and the surface of the substrate is further limited to be between 85 degrees and 95 degrees and 90 degrees, so that a better metal electrode or metal lead is obtained. Meanwhile, the included angle between the side wall of the photoresist pattern and the surface of the base material is limited between 80 degrees and 100 degrees, and when a thin layer on the surface of the base material at the opening of the photoresist pattern after development treatment needs to be corroded, the side corrosion phenomenon is avoided. The thickness of the photoresist is limited within the range of 40% of the thickness of the deposited metal, so that the gold residue phenomenon on the edge of the metal electrode or the metal wire can be avoided, particularly when the thickness of the photoresist is equal to or less than the thickness of the deposited metal, the edge of the obtained metal electrode or the metal wire is smoother, and the process tolerance of each step is increased.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
FIG. 1 is a schematic cross-sectional view of an inverted trapezoidal shape of photoresist in a conventional lift-off process;
FIG. 2 is a schematic cross-sectional view of a pattern formed by L OR in a conventional lift-off process;
FIG. 3 is a schematic view of a gold electrode manufactured by a conventional lift-off process under an electron microscope;
FIG. 4 is a schematic view of a conventional gold wire produced by a lift-off process under an electron microscope;
FIG. 5a is a schematic cross-sectional view of a photoresist pattern in a lift-off process of the present invention;
FIG. 5b is a schematic cross-sectional view of the lift-off process of the present invention after metal deposition;
FIG. 5c is a schematic cross-sectional view of the surface metal being removed during the stripping process of the present invention;
FIG. 5d is a schematic cross-sectional view of a gold wire after the photoresist is stripped in the stripping process of the present invention;
FIG. 6a is a schematic view of the invention with a photoresist thickness greater than the thickness of the metal feature;
FIG. 6b is a schematic view of the photoresist thickness being equal to the metal topography thickness of the present invention;
FIG. 6c is a schematic view of the invention with a photoresist thickness less than the thickness of the metal feature;
FIG. 7 is a schematic view of a gold wire produced by the lift-off process of the present invention under an electron microscope;
FIG. 8a is a schematic view of a negative photoresist pattern under an electron microscope according to a second embodiment of the present invention;
FIG. 8b is a schematic view under an electron microscope after gold is vapor deposited thereon according to a second embodiment of the present invention;
FIG. 8c is a schematic view under an electron microscope after the gold surface film is detached in the second embodiment of the present invention;
FIG. 8d is a schematic view under an electron microscope of the second embodiment of the present invention after the photoresist is stripped;
FIG. 9a is a schematic view of a negative photoresist pattern under an electron microscope according to a third embodiment of the present invention;
FIG. 9b is a schematic view under an electron microscope after gold is vapor deposited in example III of the present invention;
FIG. 9c is an electron microscope photograph showing the gold film on the surface of example III of the present invention after being adhered;
FIG. 9d is a schematic view under an electron microscope of a third embodiment of the present invention after the photoresist is stripped;
FIG. 10a is a schematic view of a negative photoresist pattern under an electron microscope according to a fourth embodiment of the present invention;
FIG. 10b is a schematic view under an electron microscope after gold is vapor-deposited in accordance with a fourth embodiment of the present invention;
FIG. 10c is a schematic view under an electron microscope after the gold surface film is detached in the fourth embodiment of the present invention;
FIG. 10d is a schematic view under an electron microscope of the fourth embodiment of the present invention after the photoresist is stripped;
FIG. 11a is a schematic view of a positive photoresist pattern under an electron microscope in accordance with a fifth embodiment of the present invention;
FIG. 11b is a schematic view under an electron microscope after gold is vapor-deposited in example five of the present invention;
FIG. 11c is a schematic view under an electron microscope after the gold surface film is detached in example five of the present invention;
FIG. 11d is a schematic view under an electron microscope after the photoresist is stripped in the fifth embodiment of the present invention.
The reference numbers in the embodiments of the present invention are as follows, in combination with the accompanying drawings:
1-photoresist, 2-substrate, 3-L OR, 4-gold electrode, 5-gold residue, 6-gold wire and 7-metal.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
The first embodiment is as follows:
a method of depositing a metal feature using a photoresist, comprising:
coating a photoresist on the surface of the substrate;
sequentially carrying out baking, exposure, baking and development treatment on the base material coated with the photoresist, wherein the included angle between the side wall of the photoresist pattern obtained after development and the surface of the base material is between 80 degrees and 100 degrees;
depositing metal on the surface of the photoresist pattern after development treatment, wherein the metal falls on the surface of the base material at the position of the photoresist opening;
removing the metal on the surface of the photoresist;
and removing the photoresist.
Preferably, after the steps of baking, exposing, baking and developing the substrate coated with the photoresist are sequentially performed, the method further comprises the step of corroding a thin layer on the surface of the substrate at the opening of the photoresist after the developing treatment.
Preferably, the sidewall of the photoresist pattern obtained after development has an angle of between 85 ° and 95 ° with respect to the substrate surface. More preferably the included angle is 90. The angle between the sidewall of the photoresist pattern obtained after development and the substrate surface may be 80 °, 81 °, 82 °, 83 °, 84 °, 85 °, 86 °, 87 °, 88 °, 89 °, 90 °, 91 °, 92 °, 93 °, 94 °, 95 °, 96 °, 97 °, 98 °, 99 °, or 100 °.
Preferably, the photoresist pattern after the development treatment has a thickness within 40% of the thickness of the deposited metal. Preferably, the photoresist has a thickness equal to or less than the thickness of the deposited metal.
Preferably, in the step of sequentially performing baking, exposure, baking and development on the substrate coated with the photoresist, the exposure light source is one or a mixture of visible light, 436 nm wavelength light, 360 nm wavelength light, 248 nm wavelength light and 193 nm wavelength light, the exposure mode is projection, contact or proximity, and the developer is alkaline solution or organic solvent.
Methods of metal deposition include, but are not limited to, evaporation, sputtering, and chemical vapor deposition. The photoresist is removed, specifically, the photoresist is dissolved and removed by soaking in a reagent. When the photoresist is dissolved and removed by soaking with the reagent, auxiliary methods such as heating or ultrasonic oscillation can be adopted.
And removing the metal on the surface of the photoresist by using an adhesive tape before the soaking of the reagent. And can be repeated according to the dipping of the sticking agent to the sticking agent. The step of sticking off the metal on the surface of the photoresist with the tape and the step of removing the photoresist by dissolving with the dipping of the reagent may be alternately performed a plurality of times.
The specific process flow of the invention is as follows: (1) the surface of the substrate is coated with a soluble photoresist, and then is subjected to baking, exposure, baking, development and other steps to form required patterns, wherein the patterns correspond to the shapes of the electrodes or the wires. As shown in fig. 5a, which is a schematic cross-sectional view of a photoresist pattern corresponding to a conductive line shape, the side of the pattern may have an angle b of between 80 ° and 100 °, preferably between 85 ° and 95 °, and most preferably 90 °. (2) Metal is deposited onto the surface of the photoresist pattern by evaporation, sputtering, chemical vapor deposition or other methods, and falls onto the substrate surface at the location of the photoresist openings, as shown in fig. 5 b. (3) The metal covering the surface of the photoresist pattern is removed by tape or any other method, as shown in fig. 5 c. (4) The photoresist is dissolved away from the substrate surface by immersion in a suitable reagent and the metal that lands on the substrate surface forms a metal topography, as shown in figure 5 d.
In the step (1), the thickness of the photoresist is within 40% of the thickness of the metal structure, preferably the same as or less than the thickness of the metal structure. For example, if the thickness of the metal electrode or wire to be formed is 1.5 microns, the photoresist should be between 0.9 microns and 2.1 microns, preferably between 0.9 microns and 1.5 microns. When the thickness of the photoresist is larger than that of the metal configuration, metal residue is easily caused. The cases where the photoresist thickness is greater than, equal to, and less than the metal topography thickness are shown in fig. 6a, 6b, and 6c, respectively.
The photoresist pattern in the technical scheme of the invention does not need to be in an inverted ladder shape, and even can adopt a positive ladder pattern to a certain extent, therefore, the positive photoresist is completely applicable to the invention, namely, both the negative photoresist and the positive photoresist are applicable, and the existing stripping process requires that the photoresist pattern must be in an inverted ladder shape as shown in figure 1, OR a photoresist superposed L OR shape as shown in figure 2.
The baking, exposure and development steps in step (1) need to be carried out according to the conditions required by the photoresist.
The adhesive tape used in the step (3) is a film having an adhesive surface. The step (3) can be repeated, or performed in a manner of "sticking and separating- > reagent soaking- > sticking and separating" until the metal on the surface of the photoresist pattern is completely removed.
In step (4), since the photoresist is soluble, the stripping agent gradually dissolves and removes the photoresist from the exposed surface. During the operation, the stripping speed and the stripping completeness can be promoted by raising the temperature or using ultrasonic vibration and the like. The variation of the bottom width and the top width of the metal electrode or the metal wire can be clearly seen from fig. 4 and 7. Namely, the width of the bottom of the metal electrode or the metal lead is the same as the width of the top of the metal electrode or the metal lead after the technical scheme of the invention is adopted.
The following provides several specific examples to illustrate the technical solution of the present invention:
example two:
a2 inch sapphire wafer, having been patterned and epitaxial with gallium nitride, was manually placed in a spin coater, approximately 2 ml of a soluble negative photoresist was dropped, the coater was started at 3000 revolutions per minute for 60 seconds, baked for 60 seconds using a hot plate at 110 degrees Celsius, then lowered to room temperature, the photoresist film thickness was measured to be 2.35 microns using a Dektak XT stage aligner, exposed at 10 micron gap using a proximity (SUSS exposure machine MA-100E) exposure machine, the exposure light source used a high pressure mercury lamp mixed wavelength light source, the mask plate was a L ED electrode pattern with a finger, then baked for 60 seconds at 110 degrees Celsius using a hot plate, then lowered to room temperature, developed for 60 seconds in a 2.38% tetramethylammonium hydroxide developer, rinsed with deionized water, as shown in FIG. 8a, a cross-sectional electron microscope image of the resulting photoresist pattern, the trench width was 5.0 microns, the sidewalls of the photoresist pattern were perpendicular to the substrate surface, the chamber was etched with BOxide vapor etching at 40E for 60 seconds, the photoresist film thickness was removed using a vacuum evaporation from the gold plating electron microscope, the gold plating film, the chamber was etched in a gold plating electron microscope at 358 c, the gold plating electron evaporation apparatus, the gold plating electron evaporation time, the gold plating film was removed in a vacuum evaporation apparatus, the gold plating electron microscope, the gold plating film was etched at 30 c, the temperature of the gold plating electron microscope, the gold plating film was removed in a vacuum, the gold plating bath, and the gold plating bath was removed in a vacuum deposition apparatus, and the gold plating bath, and the gold plating bath was removed in a vacuum, and the gold plating bath.
Example three:
a2 inch sapphire wafer, having patterned and epitaxial gallium nitride, was manually placed in a spin coater, approximately 2 ml of a soluble negative photoresist was dropped to start the coater, 4000 revolutions per minute, for 60 seconds, baked using a hot plate at 110 degrees Celsius for 60 seconds, and then lowered to room temperature, the photoresist film thickness was measured to be 1.50 microns using a Dektak XT stage meter, the exposure, baking, and development treatments were performed using the process of example two FIG. 9a is a cross-sectional electron microscope picture of the resulting photoresist pattern, the trench width was 5.0 microns, the sidewalls of the photoresist pattern were perpendicular to the substrate surface, etched at room temperature with BOE (buffer OxideEtcher) for 40 seconds, gold was evaporated in a ei-5z high vacuum evaporation plating apparatus (Japanese metallization U L VAC) for 5 hours FIG. 9b is a cross-sectional electron microscope picture after gold evaporation, then gold plated on the photoresist surface was removed with blue tape (Nissan blue film) FIG. 9c is a cross-sectional electron microscope picture of the gold plated on the photoresist surface after being removed by immersion in a final NMP removal solution, the thickness of this example 85 minutes, the NMP removal electron microscope picture was taken at 85 minutes.
Example four:
a2 inch sapphire wafer, having been patterned and epitaxial with gallium nitride, was manually placed in a spin coater, approximately 2 milliliters of a soluble negative photoresist was dropped, the coater was started, 4500 revolutions per minute for 60 seconds, baked using a hot plate at 110 degrees Celsius for 60 seconds, and then lowered to room temperature, the photoresist film thickness was measured to be 1.20 micrometers using a Dektak XT stage aligner, the exposure, baking, and development treatments were performed using the process of example two FIG. 10a is a cross-sectional electron microscope picture of the resulting photoresist pattern, the groove width was 5.0 micrometers, the sidewalls of the photoresist pattern were perpendicular to the substrate surface, at room temperature BOE (buffer oxide etcher) for 40 seconds, FIG. 10a is a cross-sectional electron microscope picture of the resulting photoresist pattern, gold was evaporated for 5 hours in an ei-5z high vacuum evaporation coating apparatus (Japanese U L VAC), FIG. 10b is a cross-sectional electron microscope picture of the gold evaporated after plating, then a blue tape (Nissangton film) was used to detach the gold plated on the photoresist surface, FIG. 10c is a cross-sectional electron microscope picture of the photoresist removed after the last NMP film was removed, the cross-sectional electron microscope picture was taken at a thickness of 30 minutes, and the NMP film was taken at 85.
Example five:
a2 inch sapphire wafer, having patterned and epitaxial gallium nitride, was manually placed in a spin coater, approximately 2 ml of soluble positive photoresist was dropped to start the coater, 4000 revolutions per minute for 60 seconds, baked using a hot plate at 110 degrees Celsius for 60 seconds, and then lowered to room temperature, the photoresist film thickness was measured with a Dektak XT stage profiler to be 1.23 microns, the exposure, baking, and development treatments were performed using the process of example two, the only difference being that a positive mask was used in the exposure of this example FIG. 11a is a cross-sectional electron microscope picture of the resulting photoresist pattern, the trench width was 5.0 microns, the sidewalls of the photoresist pattern were perpendicular to the substrate surface, the etch was performed with BOE (buffer Oxide etcher) for 40 seconds at room temperature, gold was evaporated in a ei-5z high vacuum evaporation plating apparatus (Japanese U L) for 5 hours FIG. 11b is a cross-sectional electron microscope picture after gold evaporation, the gold was subsequently removed with blue tape (Nissan blue film) and the gold plated on the photoresist surface was removed by immersion in a section microscope picture of FIG. 11c, and the photoresist film was removed after immersion in NMP at 10 minutes, the cross-sectional electron microscope picture of this example, NMP was taken at 10.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A method for depositing a metal feature using a photoresist, comprising:
coating a photoresist on the surface of the substrate;
sequentially carrying out baking, exposure, baking and development treatment on the base material coated with the photoresist, wherein the included angle between the side wall of the photoresist pattern obtained after development and the surface of the base material is between 90 degrees and 100 degrees;
corroding the thin layer on the surface of the base material at the opening of the photoresist after the developing treatment;
depositing metal on the surface of the photoresist pattern after development treatment, wherein the metal falls on the surface of the base material at the position of the photoresist opening;
removing the metal on the surface of the photoresist;
and
a step of removing the photoresist;
the photoresist is a soluble negative photoresist;
and (3) forming a photoresist pattern after developing treatment, wherein the thickness range of the photoresist is more than 60% of the thickness of the deposited metal and less than or equal to the thickness of the deposited metal.
2. A method of depositing a metal feature using a photoresist as recited in claim 1, wherein the sidewall of the photoresist pattern after developing is at an angle between 90 ° and 95 ° to the surface of the substrate.
3. A method of depositing a metal feature using a photoresist as recited in claim 2, wherein the sidewall of the photoresist pattern after the developing is at a 90 ° angle to the surface of the substrate.
4. The method of claim 1, wherein the photoresist-coated substrate is sequentially baked, exposed, baked, and developed, and the exposure light source is one or more of visible light, 436 nm wavelength light, 360 nm wavelength light, 248 nm wavelength light, and 193 nm wavelength light, and the exposure is performed in a projection, contact, or proximity manner, and the developer is an alkaline solution or an organic solvent.
5. A method of depositing a metal feature using a photoresist as recited in claim 1, wherein the metal is deposited by methods including but not limited to evaporation, sputtering, and chemical vapor deposition.
6. A method of depositing a metal feature using a photoresist as recited in claim 1, wherein the photoresist removal is performed by a reagent dip to dissolve the photoresist;
or/and
when the photoresist is dissolved and removed by soaking with a reagent, an auxiliary method of heating or ultrasonic oscillation is adopted.
7. The method of claim 6, wherein removing metal from the photoresist surface prior to the immersion in the reagent is by taping;
or/and
the steps of soaking and sticking the reagent are repeated.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510425972.XA CN106711017B (en) | 2015-07-20 | 2015-07-20 | Method for depositing metal features using photoresist |
| PCT/CN2015/000569 WO2017011931A1 (en) | 2015-07-20 | 2015-08-07 | Method for depositing metal configuration using photoresist |
| TW104132979A TW201704505A (en) | 2015-07-20 | 2015-10-06 | Method for depositing metal configuration using photoresist |
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| CN201510425972.XA CN106711017B (en) | 2015-07-20 | 2015-07-20 | Method for depositing metal features using photoresist |
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| CN106711017B true CN106711017B (en) | 2020-08-04 |
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| CN113867104A (en) * | 2021-09-01 | 2021-12-31 | 安徽光智科技有限公司 | Preparation method of photoresist structure for Lift-off |
| CN113816335A (en) * | 2021-09-23 | 2021-12-21 | 华东光电集成器件研究所 | Metal stripping preparation method of silicon-based wafer double-layer photoresist |
| CN114496739A (en) * | 2021-12-06 | 2022-05-13 | 上海稷以科技有限公司 | Method for improving plasma erosion resistance of gallium nitride surface |
| CN115327855A (en) * | 2022-08-31 | 2022-11-11 | 福建兆元光电有限公司 | Manufacturing method of reflecting layer of LED chip |
| CN116449655B (en) * | 2023-04-19 | 2024-05-31 | 深圳品微光学科技有限公司 | Preparation method of nanoscale hard mask |
| CN116403889B (en) * | 2023-06-08 | 2023-10-31 | 润芯感知科技(南昌)有限公司 | Patterning method and method for manufacturing semiconductor structure |
| CN117031889B (en) * | 2023-08-29 | 2024-04-02 | 无锡市华辰芯光半导体科技有限公司 | Single-layer positive photoresist photoetching method |
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| CN102054667A (en) * | 2009-10-29 | 2011-05-11 | 北大方正集团有限公司 | Method for applying photoresist lifting-off technology to protect photoetching alignment marks |
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| CN101894756B (en) * | 2009-05-22 | 2012-07-18 | 中芯国际集成电路制造(北京)有限公司 | Groove formation method, metal wire formation method, photoetching method and equipment |
| CN102043323B (en) * | 2009-10-23 | 2014-09-24 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing mask plate |
| CN102130259A (en) * | 2011-01-14 | 2011-07-20 | 大连美明外延片科技有限公司 | Composite electrode of light-emitting diode chip and manufacturing methods thereof |
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- 2015-08-07 WO PCT/CN2015/000569 patent/WO2017011931A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101278239A (en) * | 2005-09-30 | 2008-10-01 | 日本瑞翁株式会社 | Process for producing substrate with metal wiring |
| CN102054667A (en) * | 2009-10-29 | 2011-05-11 | 北大方正集团有限公司 | Method for applying photoresist lifting-off technology to protect photoetching alignment marks |
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| CN106711017A (en) | 2017-05-24 |
| WO2017011931A1 (en) | 2017-01-26 |
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