CN1153261C - Method for stripping metal - Google Patents
Method for stripping metal Download PDFInfo
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- CN1153261C CN1153261C CNB01123427XA CN01123427A CN1153261C CN 1153261 C CN1153261 C CN 1153261C CN B01123427X A CNB01123427X A CN B01123427XA CN 01123427 A CN01123427 A CN 01123427A CN 1153261 C CN1153261 C CN 1153261C
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- metal
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Abstract
The present invention relates to a method for stripping metal in microelectronic technology. The present invention uses photoresist as a mask, the photoresist is dipped by chlorobenzene for several minutes after routine exposure, is treated with hardening treatment before development, and the pattern of the photoresist is overhung in a chamfer by adding overdevelopment. At this time, the operation of substrate corrosion is implemented as required. On the basis, a metal film is deposited, and the photoresist and the superfluous metal are removed by dipping in acetone, so that the metal is peeled. The present invention completely realizes the self-alignment of substrate corrosion and metal stripping and isoplanar technology, and is widely used in MEMS and integrated circuit technology so as to simplify the technology of devices, reduce the cost and enhance the quality.
Description
Technical field: the invention belongs to integrated circuit and microelectromechanical systems manufacture field, relate in particular to the method for stripping metal in a kind of microelectronic technique.
Background technology: in microelectromechanical systems (MEMS) and integrated circuit processing technology, some material is difficult to do mask with photoresist, corrodes with chemical reagent; Serious horizontal undercutting can take place when being used alternatingly with different corrosive liquids in some multiple layer metal; Some corrosion of metals liquid can have corrosiveness to subsurface material.These problems can solve with positive glue lift-off technology.It is to make the photoresist mask that one deck has corresponding figure on the substrate of needs making metal, and evaporation or splash-proofing sputtering metal film remove photoresist masterplate and top metal level thereof with stripper more in the above, thereby obtains the metallic pattern of needs.In stripping technology, a problem that often runs into is after the photoresist mask is finished, and corrode substrate (silicon dioxide on glass or the silicon), makes self aligned metallic pattern.If undercutting can take place during corrosion in the stripping technology with conventional.Handle if photoresist is done post bake, the undercutting problem can solve, but the shape of photoresist will change, and makes stripping metal that difficulty take place.
Summary of the invention: the purpose of this invention is to provide a kind of method for stripping metal, can successfully finish metal-stripping, can also below the metal graph of a correspondence, corrode substrate, finish peeling off of autoregistration corrosion and metal.
Method for stripping metal of the present invention, its step comprises
1) with photoresist with the even glue of substrate;
2) will spare substrate behind the glue and do before baking handle, oven temperature is 90-110 ℃, time 5-15 minute;
3) make rotine exposure with reticle;
4) substrate is put into organic solvent and soaked 2-10 minute, dry up after the taking-up or dry;
5) substrate was put into 115-130 ℃ of baking oven post bake 15-25 minute;
6) treat that substrate cools off the back routine and crosses development slightly, make the photoresist figure be chamfering and dangle;
7) the flushing back dries, and puts into sputtering unit splash-proofing sputtering metal or evaporate metal films so, and thickness of metal film is advisable less than 1 micron;
8) substrate is put into stripper, remove photoresist and unnecessary metal, the time was advisable with 5-10 minute.
Photoresist of the present invention can be used the common photoresist of individual layer.Even glue thickness is the 1-3 micron.
Substrate is corroded in the present invention as required.
The present invention's chemical reagent wet etching substrate.Described chemical reagent is a buffered hydrofluoric acid solution.
The degree of depth of corrosion substrate is 1: 1.1 to 1: 1.3 with the ratio of the thickness of metal film.
Stripper of the present invention is an acetone, can add ultrasonic wave when soaking the substrate after sputter or the evaporate metal films so.
Principle of the present invention and good effect:
Positive glue stripping technology, be on the substrate of needs making metal, to make the photoresist mask that one deck has corresponding figure, evaporation or splash-proofing sputtering metal film remove photoresist film version and top metal level thereof with stripper more in the above, thereby obtain the metallic pattern of needs.The key of this technology is the sidewall shape of photoresist figure.Fig. 1 has shown SEM (electron microscope scanning) photo of common photoetching glue pattern, and its sidewall is more steep, and up-narrow and down-wide, behind the depositing metal, metal will join together, and not have fracture port, stripper is difficult to pass metal penetration to photoresist, does not allow to be easy to do and peels off.If this photoresist figure is done post bake again and handled, can cause the serious limit of collapsing, even can't peel off.
The present invention increases high-temperature baking and chlorobenzene and handles on the basis of original technology, the photoresist mask had both been maintained be beneficial to the shape of peeling off, and makes the photoresist figure wide at the top and narrow at the bottom, and after the processing of heating, photoresist is indeformable.Do mask with photoresist and carry out wet etching, again undercutting can not take place during corrosion.This invention can be widely used in MEMS and integrated circuit processing technology, finishes autoregistration corrosion and isoplanar metal-stripping.
The present invention is with the common photoresist of individual layer (as the auspicious red product RZJ-301 PG14 positive photoresist in Suzhou), conventional even glue, preceding baking, exposure back organic solvent, particularly benzene class organic solvent such as chlorobenzene soak a few minutes, do suitable high temperature post bake with baking oven again and handle, put into suitable chemical corrosion liquid after the development, carry out wet etching.After the corrosion, rinse well, after the drying, carry out sputter or evaporated metal film with deionized water.Use stripper (acetone etc.) to remove photoresist and top unnecessary metal thereof at last, finish peeling off of metal.
Photoresist is with after the chlorobenzene immersion treatment, and chlorobenzene is diffused into the glued membrane certain depth, and glued membrane is expanded, and forms a kind of jello, compares with internal layer, has lower development dissolution velocity, makes adhesive tape wide at the top and narrow at the bottom, and chamfering occurs and dangle (as shown in Figure 2).If directly depositing metal removes photoresist and unnecessary metal with stripper, metal ruptures at the chamfering place of dangling, and stripper is easy to enter and dissolve photoresist, realizes metal-stripping.
In the MEMS processing technology, need to corrode the base substrate under the corresponding figure under a lot of situations, as glass, silicon dioxide (SiO
2) etc.If do not do high-temperature process, serious horizontal undercutting can take place.Usually after development, handle the undercutting problem that solves with the high temperature post bake.But in self aligned stripping technology, post bake can make the photoresist patterned surface subside, even can't peel off.
The invention solves undercutting and the contradiction of peeling off.Utilize chlorobenzene to soak the more crisp hard characteristics of back photoresist surface ratio, the post bake step is placed on before the development.The exposure back is placed on sample in the chlorobenzene soaks, and carries out post bake again.The temperature and the heating rate of control post bake make the photoresist figure after the development have tangible chamfering to dangle.At this moment sample can be put into corrosive liquid and corrodes, and undercutting can not take place.Fig. 3 (a) and (b) shown the be corroded high growth temperature SiO of 0.35 micron and 0.75 micron of substrate respectively
2Profile.After substrate etching is intact, directly evaporate or the splash-proofing sputtering metal film, be deposited to the complete autoregistration of metal on the substrate after the corrosion.By adjusting the thickness of etching time and depositing metal film, determine metal and substrate etc. the plane degree, be beneficial to bonding in the MEMS technology of back or the multilayer wiring in the integrated circuit.Fig. 4 has shown the SEM profile behind the depositing metal, and the photoresist under chamfering is dangled comes out fully, and stripper is easy to contact and dissolving photoresist, makes unnecessary metal be stripped from (as shown in Figure 5).
The present invention will be widely used in MEMS and the integrated circuit technology, and device technology is simplified, and reduce cost, and improve the quality.
Description of drawings
Fig. 1. the SEM photo of common photoetching glue pattern.
Fig. 2. soak high temperature post bake, the SEM photo after the development with chlorobenzene.
Fig. 3 (a). substrate Si O
2SEM photo after 0.35 micron is corroded.
Fig. 3 (b). substrate Si O
2SEM photo after 0.75 micron is corroded.
Fig. 4. the SEM photo behind the depositing metal.
Fig. 5. the metal after peeling off, SiO
2Surface SEM photo.
Embodiment:
1. after sample (silicon chip or sheet glass) cleans, with the even glue of RZJ-301 PG14.The thick 1-3 micron of glue.
2. baking was handled before the sample behind the even glue was done, and baking oven 90-110 ℃, 5-15 minute.
3. do rotine exposure with reticle.
4. sample is put into chlorobenzene and soaked 3-5 minute, dry up after the taking-up or dry.
5. sample is put into 115-130 ℃ of baking oven, post bake 15-25 minute.
6. after the sample cooling, routine is crossed slightly and is developed.
7. etching glass or SiO in buffered hydrofluoric acid solution
2
8. flushing back dries, and puts into sputtering unit splash-proofing sputtering metal (thickness＜1 micron).
9. sample is put into acetone, remove photoresist and unnecessary metal.
Claims (9)
1. method for stripping metal, its step comprises
1) with photoresist with the even glue of substrate;
2) will spare substrate behind the glue and do before baking handle, oven temperature is 90-110 ℃, time 5-15 minute;
3) make rotine exposure with reticle;
4) substrate is put into organic solvent and soaked 2-10 minute, dry up after the taking-up or dry;
5) substrate was put into 115-130 ℃ of baking oven post bake 15-25 minute;
6) treat that the substrate behind the post bake cools off the development slightly excessively of back routine, makes the photoresist figure be chamfering and dangles;
7) the flushing back dries, and puts into sputtering unit sputter or evaporate metal films so;
8) substrate is put into stripper, remove photoresist and unnecessary metal.
2. a method for stripping metal as claimed in claim 1 is characterized in that after described photoresist rotine exposure, soaks 2-10 minute with benzene class organic solvent.
3. a method for stripping metal as claimed in claim 1 is characterized in that at development post-etching substrate.
4. a method for stripping metal as claimed in claim 3 is characterized in that making wet etching with chemical reagent.
5. a method for stripping metal as claimed in claim 4 is characterized in that described chemical reagent is a buffered hydrofluoric acid solution.
6. one kind as claim 3 or 4 or 5 described method for stripping metal, and the degree of depth that it is characterized in that corroding substrate is 1: 1.1 to 1: 1.3 with the ratio of the thickness of metal film.
7. a method for stripping metal as claimed in claim 1 is characterized in that even glue thickness is the 1-3 micron.
8. a method for stripping metal as claimed in claim 1 is characterized in that stripper is an acetone, soaks substrate 5-10 minute after sputter or the evaporate metal films so.
9. a method for stripping metal as claimed in claim 8 adds ultrasonic wave when it is characterized in that with the substrate after acetone immersion sputter or the evaporate metal films so.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01123427XA CN1153261C (en) | 2001-07-23 | 2001-07-23 | Method for stripping metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01123427XA CN1153261C (en) | 2001-07-23 | 2001-07-23 | Method for stripping metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1397986A CN1397986A (en) | 2003-02-19 |
| CN1153261C true CN1153261C (en) | 2004-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB01123427XA Expired - Fee Related CN1153261C (en) | 2001-07-23 | 2001-07-23 | Method for stripping metal |
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| CN100565337C (en) * | 2005-08-22 | 2009-12-02 | 昆明物理研究所 | A kind of Pt/Ti metal membrane patterning method |
| CN100496175C (en) * | 2005-11-24 | 2009-06-03 | 中国科学院微电子研究所 | Preparation method of silicon-based organic light-emitting micro-display metal anode and cathode isolation column |
| CN101826456B (en) * | 2009-03-02 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Method for improving uniformity of feature sizes of grids |
| CN102054667B (en) * | 2009-10-29 | 2012-11-07 | 北大方正集团有限公司 | Method for applying photoresist lifting-off technology to protect photoetching alignment marks |
| CN102788777B (en) * | 2011-05-19 | 2015-08-19 | 北京大学 | Micro-fluidic Surface enhanced raman spectroscopy detection means and preparation method thereof and application |
| CN103021803A (en) * | 2011-09-26 | 2013-04-03 | 上海华虹Nec电子有限公司 | Method for protecting thick metal layer photoetching alignment mark |
| CN106711017B (en) * | 2015-07-20 | 2020-08-04 | 潍坊星泰克微电子材料有限公司 | Method for depositing metal features using photoresist |
| CN107065432A (en) * | 2017-05-27 | 2017-08-18 | 中国电子科技集团公司第四十研究所 | A kind of method for preparing chromium plate mask plate |
| CN109581830A (en) * | 2019-01-21 | 2019-04-05 | 中国科学院上海光学精密机械研究所 | A kind of method for stripping metal based on laser hot-die photoetching |
| CN111487845A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Method for manufacturing L ED die electrode mask pattern capable of being directly stripped |
| CN110737170A (en) * | 2019-03-07 | 2020-01-31 | 南方科技大学 | Method for making nano structure |
| CN111834216B (en) * | 2019-04-15 | 2022-07-15 | 中国科学院物理研究所 | Method for preparing nano-sized metal film pattern |
| CN110379707B (en) * | 2019-08-21 | 2024-05-28 | 无锡英菲感知技术有限公司 | Metal patterned stripping structure and manufacturing method thereof |
| CN112510068A (en) * | 2020-10-19 | 2021-03-16 | 南京昀光科技有限公司 | Silicon-based organic electroluminescent micro-display and preparation method thereof |
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2001
- 2001-07-23 CN CNB01123427XA patent/CN1153261C/en not_active Expired - Fee Related
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| CN1397986A (en) | 2003-02-19 |
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