CN112510068A - Silicon-based organic electroluminescent micro-display and preparation method thereof - Google Patents
Silicon-based organic electroluminescent micro-display and preparation method thereof Download PDFInfo
- Publication number
- CN112510068A CN112510068A CN202011118174.XA CN202011118174A CN112510068A CN 112510068 A CN112510068 A CN 112510068A CN 202011118174 A CN202011118174 A CN 202011118174A CN 112510068 A CN112510068 A CN 112510068A
- Authority
- CN
- China
- Prior art keywords
- silicon
- layer
- buffer
- electrode
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 193
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 193
- 239000010703 silicon Substances 0.000 title claims abstract description 193
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 119
- 239000000463 material Substances 0.000 claims abstract description 52
- 239000007864 aqueous solution Substances 0.000 claims abstract description 30
- 238000000059 patterning Methods 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 117
- 238000000034 method Methods 0.000 claims description 53
- 230000008569 process Effects 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000000137 annealing Methods 0.000 claims description 15
- 238000004806 packaging method and process Methods 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 239000005357 flat glass Substances 0.000 claims description 7
- 239000006059 cover glass Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 abstract description 11
- 239000007924 injection Substances 0.000 abstract description 11
- 238000005215 recombination Methods 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 8
- 239000000969 carrier Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 149
- 238000004528 spin coating Methods 0.000 description 8
- 238000005507 spraying Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000003125 aqueous solvent Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
Abstract
The embodiment of the invention discloses a silicon-based organic electroluminescent micro-display and a preparation method thereof. The silicon-based organic electroluminescent micro-display comprises: the circuit board comprises a silicon-based circuit substrate and a driving circuit, wherein the silicon-based circuit substrate comprises a silicon-based substrate and the driving circuit positioned on the silicon-based substrate; the plurality of sub-pixels are arranged on the silicon-based circuit substrate and comprise a first electrode, a buffer pattern, an organic light-emitting layer and a second electrode which are sequentially stacked, and the first electrode is electrically connected with the driving circuit; the buffer pattern is formed by patterning a buffer layer, and the buffer layer is prepared by using an aqueous solution of a buffer material. The embodiment of the invention solves the problem that transverse electric leakage is easy to occur among the sub-pixels of the existing silicon-based organic electroluminescent micro-display, can avoid the mutual color crosstalk among the sub-pixels, can improve the hole injection capability of the sub-pixels, improves the recombination efficiency of carriers and improves the luminous efficiency of the sub-pixels.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a silicon-based organic electroluminescent micro-display and a preparation method thereof.
Background
The silicon-based organic electroluminescent device is an optoelectronic device which is prepared by further preparing organic electroluminescent materials on a monocrystalline silicon substrate prepared with a semiconductor CMOS circuit and can form a silicon-based organic light-emitting micro-display after being packaged. The silicon-based organic electroluminescent display has the characteristics of brightness, rich colors, low driving voltage, high response speed, low power consumption and the like, and can provide higher definition resolution under the display area smaller than 1 inch, so the silicon-based organic electroluminescent display is very rapid in development and can be applied to the fields of military affairs, medicine, industry, aerospace, entertainment consumer electronics and the like, in particular to novel applications such as wearable equipment, virtual display, augmented reality and the like.
At present, the common process route of the silicon-based organic electroluminescent micro-display is to prepare a CMOS bottom layer circuit in a wafer factory and then prepare subsequent processes such as evaporation packaging, CF, cutting, bonding and the like in a panel display factory. The anode is prepared in a wafer factory while the bottom layer circuit is prepared, or the anode can also be prepared in a panel factory, so that the anode of the silicon-based organic electroluminescent micro-display is usually prepared by metal or metal nitride such as aluminum or aluminum nitride. In the sub-pixel, the anode made of Al or TiN has a low work function, resulting in a decrease in hole injection capability. To solve this problem, the anode injection capability is currently enhanced by p-doped organic materials such as NPD-9 in the fabrication of silicon-based subpixels. Meanwhile, because the Open mask is used for evaporating a layer of the p-doped organic material in the existing preparation method of the silicon-based organic electroluminescent micro-display, and the NPD-9 material has extremely strong conductivity and small sub-pixel spacing (generally about 1 um), the transverse electric leakage among the sub-pixels is easily caused, so that the color crosstalk among the adjacent sub-pixels can be caused, and the color gamut is reduced.
Disclosure of Invention
The invention provides a silicon-based organic electroluminescent micro-display and a preparation method thereof, which aim to improve the preparation process of the silicon-based organic electroluminescent micro-display, improve the mutual insulation capability of the silicon-based organic electroluminescent micro-display and avoid the color crosstalk problem among the silicon-based organic electroluminescent micro-displays.
In a first aspect, an embodiment of the present invention provides a silicon-based organic electroluminescent microdisplay, including:
the circuit board comprises a silicon-based circuit substrate and a driving circuit, wherein the silicon-based circuit substrate comprises a silicon-based substrate and the driving circuit positioned on the silicon-based substrate;
the plurality of sub-pixels are arranged on the silicon-based circuit substrate and comprise a first electrode, a buffer pattern, an organic light-emitting layer and a second electrode which are sequentially stacked, and the first electrode is electrically connected with the driving circuit;
the buffer pattern is formed by patterning a buffer layer, and the buffer layer is prepared by using an aqueous solution of a buffer material.
Optionally, the liquid crystal display further comprises an encapsulation layer, a color filter layer and cover glass, which are sequentially stacked, wherein the color filter layer comprises a plurality of color filter dots;
the packaging layer is positioned on one side of the plurality of sub-pixels, which is far away from the silicon-based circuit substrate, and covers the plurality of sub-pixels;
the color filter layer is positioned on one side of the packaging layer, which is far away from the sub-pixels, and the color filter points correspond to the sub-pixels one by one;
the cover plate glass is positioned on one side of the color filter layer, which is far away from the packaging layer.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a silicon-based organic electroluminescent micro-display, including:
forming a buffer layer on a plurality of first electrodes on a silicon-based circuit substrate by using an aqueous solution of a buffer material, wherein the plurality of first electrodes are uniformly distributed on the silicon-based circuit substrate;
patterning the buffer layer to form a plurality of buffer patterns, wherein the buffer patterns and the first electrodes are stacked up and down in a one-to-one correspondence manner;
and sequentially forming an organic light-emitting layer and a second electrode on one side of each buffer pattern, which is far away from the first electrode, so as to form a plurality of sub-pixels.
Optionally, the silicon-based circuit substrate includes a silicon-based substrate and a driving circuit located on the silicon-based substrate, and the driving circuit includes a plurality of the first electrodes;
forming a buffer layer on a plurality of first electrodes on a silicon-based circuit substrate using an aqueous solution of a buffer material, comprising:
forming a photoresist pattern on the silicon-based circuit substrate, wherein photoresist in the photoresist pattern is positioned between any two adjacent first electrodes, and the surface of one side of the first electrode, which is far away from the silicon-based substrate, is flush with the surface of one side of the photoresist pattern, which is far away from the silicon-based substrate;
coating an aqueous solution of a buffer material on the photoresist pattern and the plurality of first electrodes to form a buffer layer;
patterning the buffer layer to form a plurality of buffer patterns, including:
and dissolving the photoresist pattern and stripping the film layer on the photoresist pattern by adopting an oil-soluble organic solvent to form a plurality of buffer patterns.
Optionally, forming a photoresist pattern on the silicon-based circuit substrate includes:
forming a photoresist layer on the silicon-based circuit substrate, wherein the photoresist layer covers the first electrode and the silicon-based substrate;
curing the photoresist layer;
and exposing and developing the photoresist layer to form the photoresist pattern.
Optionally, the silicon-based circuit substrate includes a silicon-based substrate and a driving circuit on the silicon-based substrate, the driving circuit including a plurality of guiding electrodes;
forming a buffer layer on a plurality of first electrodes on a silicon-based circuit substrate using an aqueous solution of a buffer material, comprising:
forming a photoresist pattern on the silicon-based circuit substrate, wherein photoresist in the photoresist pattern is positioned between any two adjacent guide electrodes;
forming a first electrode layer on the photoresist pattern and the guide electrode;
coating an aqueous solution of a buffer material on the first electrode layer to form a buffer layer;
patterning the buffer layer to form a plurality of buffer patterns, including:
and dissolving the photoresist pattern and the film layer on the photoresist pattern by adopting an oil-soluble organic solvent to form a plurality of buffer patterns.
Optionally, forming a photoresist pattern on the silicon-based circuit substrate includes:
forming a photoresist layer on the silicon-based circuit substrate, wherein the photoresist layer covers the guide electrode and the silicon-based substrate;
curing the photoresist layer;
and exposing and developing the photoresist layer to form the photoresist pattern.
Optionally, before the step of dissolving the photoresist pattern and stripping the film layer on the photoresist pattern by using an oil-soluble organic solvent to form a plurality of buffer patterns, the method further includes:
and annealing the buffer layer.
Optionally, the annealing temperature of the annealing treatment is 80-250 ℃, and the annealing time is 30min-2 h.
Optionally, after sequentially forming an organic light emitting layer and a second electrode on a side of each of the buffer patterns facing away from the first electrode to form a plurality of sub-pixels, the method further includes:
and sequentially forming a packaging layer, a color filter layer and cover plate glass on one side of the sub-pixel, which is far away from the silicon-based circuit substrate.
According to the silicon-based organic electroluminescent micro-display and the preparation method thereof provided by the embodiment of the invention, the buffer layer is formed on the plurality of first electrodes on the silicon-based circuit substrate through the aqueous solution of the buffer material, then the buffer layer is patterned to form a plurality of buffer patterns, the buffer patterns and the first electrodes are stacked up and down in a one-to-one correspondence manner, and finally the organic light emitting layer and the second electrode are sequentially formed on one side of each buffer pattern, which is far away from the first electrode, to form a plurality of sub-pixels, so that the surface work function of the first electrode is improved, the potential barrier between the first electrode and the organic layer is reduced, and the performance of the silicon-based organic electroluminescent micro-display is ensured. The embodiment of the invention solves the problem that transverse electric leakage is easy to occur between sub-pixels of the existing silicon-based organic electroluminescent micro-display, can avoid mutual color crosstalk between the sub-pixels, and simultaneously can improve the hole injection capability of the sub-pixels, improve the recombination efficiency of carriers and improve the luminous efficiency of the sub-pixels.
Drawings
Fig. 1 is a schematic structural diagram of a silicon-based organic electroluminescent micro-display according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another silicon-based organic electroluminescent micro-display provided by an embodiment of the present invention;
FIG. 3 is a flow chart of a method for fabricating a silicon-based organic electroluminescent micro-display according to an embodiment of the present invention;
FIG. 4 is a flow chart of the structure of the method for fabricating the silicon-based organic electroluminescent micro-display shown in FIG. 3;
FIG. 5 is a flow chart of another method for fabricating a silicon-based OLED according to an embodiment of the present invention;
FIG. 6 is a flow chart of the structure of the method for fabricating the silicon-based organic electroluminescent microdisplay shown in FIG. 5;
FIG. 7 is a flow chart of another method for fabricating a silicon-based OLED according to an embodiment of the present invention;
fig. 8 is a flow chart of the structure of the method for manufacturing the silicon-based organic electroluminescent micro-display shown in fig. 7.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a silicon-based organic electroluminescent micro-display according to an embodiment of the present invention, and referring to fig. 1, the silicon-based organic electroluminescent micro-display includes a silicon-based circuit substrate 10, where the silicon-based circuit substrate 10 includes a silicon-based substrate 12 and a driving circuit 14 located on the silicon-based substrate 12; the sub-pixel 100 is arranged on the silicon-based circuit substrate 10, the sub-pixel 100 comprises a first electrode 11, a buffer pattern 21, an organic light-emitting layer 30 and a second electrode 40 which are sequentially stacked, and the first electrode 11 is electrically connected with a driving circuit 14. The buffer pattern 21 is formed by patterning a buffer layer, and the buffer layer is prepared using an aqueous solution of a buffer material.
The silicon-based circuit substrate 10 is a silicon-based substrate on which CMOS bottom layer circuits are formed on a wafer, and the CMOS bottom layer circuits on the silicon-based circuit substrate 10 are used for driving and controlling sub-pixels formed thereon, respectively. The first electrode 11 disposed on the silicon-based circuit substrate 10 is an anode or a cathode in the sub-pixel, and here is an optimized sub-pixel device structure, and the first electrode is an anode. Each first electrode 11 on the silicon-based circuit substrate 10 is correspondingly prepared to form a sub-pixel, and the sub-pixel is substantially an OLED device. Therefore, in order to secure insulation of adjacent sub-pixels, the plurality of first electrodes 11 are insulated from each other. Specifically, the first electrode 11 may be disposed in an array arrangement or the like according to the arrangement requirement of the sub-pixels, and is not limited herein.
It can be understood that the first electrode 11 is usually made of metal or metal nitride in the conventional manufacturing process, and the work function thereof is generally low, which is not favorable for hole injection of the sub-pixel, resulting in low carrier recombination efficiency and light emitting efficiency of the sub-pixel. In the embodiment of the invention, the buffer pattern 21 is added on the first electrode 11 of the sub-pixel 100, and the sub-pixel 100 is substantially in a buffer layer structure, so that the buffer pattern 21 can reduce potential barrier, improve hole injection efficiency, and improve carrier recombination efficiency and light emitting efficiency of the sub-pixel. On the silicon-based circuit substrate 10, one sub-pixel 100 is formed corresponding to each first electrode 11. By driving the driving circuit 14 on the silicon-based circuit substrate 10, the on/off of each sub-pixel 100 can be controlled, so that the on/off and the brightness of the silicon-based organic electroluminescent micro-display can be controlled, and functions such as illumination, display and the like can be performed.
In the buffer pattern in the sub-pixel 100, a buffer layer is formed by preparing an aqueous solution of a buffer material, and the buffer layer is patterned to form the buffer pattern 21. The aqueous solution of the buffer material is prepared by dissolving the buffer material in water, and removing the aqueous solvent by a coating method such as spin coating or spray coating to form the buffer layer, wherein the buffer material can be uniformly dissolved by stirring, oscillating or the like. The buffer layer is a relatively flat film layer composed of buffer materials, and the film thickness of the buffer layer can be adjusted according to the concentration of an aqueous solution, the liquid amount of spin coating or spray coating and the process parameters during spin coating or spray coating. The patterning process of the buffer layer is substantially a process of dividing the buffer layer into a plurality of mutually independent and insulated patterns, and the dividing process is not realized by a physical method such as cutting, but is generally realized by a chemical method such as dissolving, etching and the like. Compared with the conventional method of preparing a whole buffer layer by using an organic buffer material and a deposition process such as thermal evaporation, the silicon-based organic electroluminescent micro-display provided by the embodiment of the invention is prepared by coating with an aqueous solution and then patterning to form a buffer pattern, so that the problem that the conventional buffer layer made of open mask is conductive to each other and the adjacent sub-pixels are easy to leak electricity laterally can be avoided.
The silicon-based organic electroluminescent micro-display provided by the embodiment of the invention is provided with a silicon-based circuit substrate, the silicon-based circuit substrate comprises a silicon-based substrate and a driving circuit positioned on the silicon-based substrate, and is also provided with a plurality of sub-pixels, the sub-pixels are arranged on the silicon-based circuit substrate and comprise a first electrode, a buffer pattern, an organic light-emitting layer and a second electrode which are sequentially arranged in a laminated manner, and the first electrode is electrically connected with the driving circuit; the buffer pattern is formed by patterning the buffer layer, the buffer layer is prepared by using an aqueous solution of a buffer material, the surface work function of the first electrode is improved, the potential barrier between the first electrode and the organic layer is reduced, and the performance of the silicon-based organic electroluminescent micro-display is ensured. The embodiment of the invention can solve the problem that transverse electric leakage is easy to occur among sub-pixels of the conventional silicon-based organic electroluminescent micro-display, can avoid color crosstalk among the sub-pixels, and can improve the hole injection capability of the sub-pixels, improve the recombination efficiency of carriers and improve the luminous efficiency of the sub-pixels.
Further, the silicon-based organic electroluminescent micro-display further comprises an encapsulation layer 50, a color filter layer 60 and cover glass 70 which are sequentially stacked, wherein the color filter layer 60 comprises a plurality of color filter dots 61; the packaging layer 50 is positioned on one side of the plurality of sub-pixels 100, which is far away from the silicon-based circuit substrate 10, and covers the plurality of sub-pixels 100; the color filter layer 60 is located on a side of the encapsulation layer 50 away from the sub-pixels 100, and the color filter dots 61 correspond to the sub-pixels 100 one by one; a cover glass 70 is located on the side of the color filter layer 60 facing away from the encapsulation layer 50.
The encapsulation layer 50 is made of pure inorganic material, such as a laminated structure of SiO/SiN/Al2O3, or may also be inorganic/organic/inorganic, and the specific material is not limited. The encapsulation layer 50 is used to seal and protect each sub-pixel 100, so that the sub-pixel is protected from erosion of air and water vapor, thereby ensuring that the organic material in the sub-pixel 100 is not deteriorated and ensuring high-efficiency light-emitting efficiency. The color filter layer 60 is a color filter dot added to each sub-pixel 100, and the color of the light emitted from the sub-pixel 100 can be converted by the color filter dot. As shown in the figure, three color filtering points of red, green and blue may be respectively disposed on three adjacent sub-pixels 100, so that one pixel unit is formed by the sub-pixels 100 of the three colors of red, green and blue, so as to perform color matching, and present a full-color display.
Fig. 2 is a schematic structural diagram of another silicon-based organic electroluminescent micro-display according to an embodiment of the present invention, and referring to fig. 2, it should be noted that two silicon-based organic electroluminescent micro-displays shown in fig. 1 and fig. 2 are different in whether the silicon-based circuit substrate 10 is fabricated with the first electrode 11 synchronously when fabricating the CMOS driving circuit 14. In the silicon-based organic electroluminescent micro-display shown in fig. 2, since the first electrode 11 is not disposed on the silicon-based circuit substrate 10, in order to electrically connect the sub-pixel 100 with the driving circuit 14, a plurality of guiding electrodes 13 need to be disposed on the silicon-based circuit substrate 10, and the driving circuit 14 is connected with the first electrode 11 of the sub-pixel 100 through the guiding electrodes 13, so as to control the light emission of the sub-pixel 100.
An embodiment of the present invention further provides a method for manufacturing a silicon-based organic electroluminescent micro-display, fig. 3 is a flowchart of a method for manufacturing a silicon-based organic electroluminescent micro-display according to an embodiment of the present invention, fig. 4 is a structural flowchart of a method for manufacturing a silicon-based organic electroluminescent micro-display shown in fig. 3, and referring to fig. 3 and fig. 4, the method for manufacturing a silicon-based organic electroluminescent micro-display includes:
s110, forming a buffer layer on the plurality of first electrodes on the silicon-based circuit substrate by using an aqueous solution of a buffer material, wherein the plurality of first electrodes are uniformly distributed on the silicon-based circuit substrate.
Referring to a) of fig. 4, a silicon-based circuit substrate 10 is a silicon-based substrate after CMOS bottom layer circuits are formed on a wafer, and the CMOS bottom layer circuits on the silicon-based circuit substrate 10 are used for driving and controlling sub-pixels formed thereon respectively. The first electrode 11 disposed on the silicon-based circuit substrate 10 is an anode or a cathode in the sub-pixel, and here is an optimized sub-pixel device structure, and the first electrode is an anode. Each of the first electrodes 11 on the silicon-based circuit substrate 10 may be prepared to form a sub-pixel, and thus, in order to ensure the insulation of the adjacent sub-pixels, the plurality of first electrodes 11 are insulated from each other. Specifically, the first electrode 11 may be disposed in an array arrangement or the like according to the arrangement requirement of the sub-pixels, and is not limited herein.
It can be understood that the first electrode 11 is usually made of metal or metal nitride in the conventional manufacturing process, and the work function thereof is generally low, which is not favorable for hole injection of the sub-pixel, resulting in low carrier recombination efficiency and light emitting efficiency of the sub-pixel. The buffer layer 20 is added on the first electrode 11 of the sub-pixel, so that the buffer layer 20 can be used for reducing potential barrier, improving hole injection efficiency and improving carrier recombination efficiency and luminous efficiency of the sub-pixel. The aqueous solution of the buffer material is formed by dissolving the buffer material in water, and removing the aqueous solvent by a coating method such as spin coating or spray coating, wherein the buffer material can be uniformly dissolved by stirring or oscillation. The buffer layer 20 is a relatively flat film layer made of a buffer material, and the film thickness thereof can be adjusted according to the concentration of an aqueous solution, the amount of liquid for spin coating or spray coating, and the process parameters during spin coating or spray coating.
And S120, patterning the buffer layer to form a plurality of buffer patterns, wherein the buffer patterns and the first electrodes are stacked up and down in a one-to-one correspondence manner.
Referring to fig. 4 b), the buffer layer 20 formed in step S110 is a whole-film structure, and referring to fig. 4 b), the buffer layer 20 is substantially divided to form a buffer pattern 21 for each sub-pixel. The patterning process of the buffer layer is substantially a process of dividing the buffer layer into a plurality of mutually independent and insulated patterns, and the dividing process is not realized by a physical method such as cutting, but is generally realized by a chemical method such as dissolving, etching and the like. Each of the buffer patterns 21 is arranged in line with the first electrode 11, insulated from each other, and in a stacked relationship.
It should be noted that, through steps S110 and S120, the buffer layer is prepared by using the aqueous solution of the buffer material, and the buffer layer 20 is divided, compared with the conventional process of preparing an organic buffer material by a deposition process such as thermal evaporation, the process for preparing a silicon-based organic electroluminescent micro-display provided in this embodiment can avoid the problem that the buffer layers made by the open mask are conductive to each other and the adjacent sub-pixels are prone to generate lateral leakage.
And S130, sequentially forming an organic light-emitting layer and a second electrode on one side of each buffer pattern, which is far away from the first electrode, so as to form a plurality of sub-pixels.
Referring to fig. 4 c), this step is a step of performing a subsequent sub-pixel fabrication process on the basis of the buffer pattern 21. Here, the material of the organic light emitting layer 30 and the material of the second electrode 40 are not limited herein. In step S130, a sub-pixel 100 is formed on the silicon-based circuit substrate 10 corresponding to each first electrode 11. By driving the silicon-based circuit substrate 10, the on-off and brightness of the silicon-based organic electroluminescent micro-display can be controlled, so that functions such as illumination, display and the like can be performed.
According to the preparation method of the silicon-based organic electroluminescent micro-display, the buffer layer is formed on the plurality of first electrodes on the silicon-based circuit substrate through the aqueous solution of the buffer material, then the buffer layer is patterned to form the plurality of buffer patterns, the buffer patterns and the first electrodes are stacked up and down in a one-to-one correspondence mode, and finally the organic light emitting layer and the second electrode are sequentially formed on one side of each buffer pattern, which is far away from the first electrode, so that the plurality of sub-pixels are formed, the surface work function of the first electrode is improved, the potential barrier between the first electrode and the organic layer is reduced, and the performance of the silicon-based organic electroluminescent micro-display is guaranteed. The embodiment of the invention solves the problem that transverse electric leakage is easy to occur among the sub-pixels of the existing silicon-based organic electroluminescent micro-display, can avoid the mutual color crosstalk among the sub-pixels, can improve the hole injection capability of the sub-pixels, improves the recombination efficiency of carriers and improves the luminous efficiency of the sub-pixels.
The buffer material used in the above examples is a water-soluble buffer material, and the buffer layer is prepared from an aqueous solution of the buffer material. Specifically, the buffer material may be PEDOT: PSS, or may be a transition metal oxide such as molybdenum oxide, tungsten oxide, vanadium oxide, copper oxide, or the like, or a mixture of two buffer materials, which is not limited herein. In addition, the material of the first electrode may specifically adopt at least one of aluminum, titanium, molybdenum or titanium nitride.
In addition, it should be noted that the silicon-based organic electroluminescent micro-display provided by the embodiment of the present invention may be used to prepare a display screen with a certain size, and in an actual application scenario, the preparation process of the silicon-based organic electroluminescent micro-display further includes a process flow of encapsulation and color matching. Specifically, after forming the organic light emitting layer and the second electrode in sequence on the side of each buffer pattern away from the first electrode to form a plurality of sub-pixels in step S130, referring to d) of fig. 4, the method for manufacturing a silicon-based organic electroluminescent micro-display further includes:
and S140, sequentially forming a packaging layer, a color filter layer and cover plate glass on one side of the sub-pixel, which is far away from the silicon-based circuit substrate.
The encapsulation layer 50 is made of pure inorganic material, such as a laminated structure of SiO/SiN/Al2O3, or may also be inorganic/organic/inorganic, and the specific material is not limited. The encapsulation layer 50 is used to seal and protect each sub-pixel 100, so that the sub-pixel is protected from erosion of air and water vapor, thereby ensuring that the organic material in the sub-pixel 100 is not deteriorated and ensuring high-efficiency light-emitting efficiency. The color filter layer 60 is a color filter dot added to each sub-pixel 100, and the color of the light emitted from the sub-pixel 100 can be converted by the color filter dot. As exemplarily shown in the figure, three color filtering dots of red, green and blue may be respectively disposed on three adjacent sub-pixels 100, so that three sub-pixels are formed by the sub-pixels 100 of the three colors of red, green and blue, so as to perform color matching and present a full-color display. Further, when the silicon-based organic electroluminescent micro-display is manufactured, processes such as cutting, mounting and the like are also performed, and a description is not provided herein.
As described in the background section, existing fabs form CMOS underlying circuitry on the wafer during fabrication, while the anodes of the sub-pixels are fabricated. At this time, the silicon-based circuit substrate provided in the above embodiment includes a silicon-based substrate and a driving circuit located on the silicon-based substrate, where the driving circuit includes a plurality of first electrodes. In view of the situation, the embodiment of the invention provides a specific preparation method of a silicon-based organic electroluminescent micro-display. Fig. 5 is a flowchart of another method for fabricating a silicon-based organic electroluminescent microdisplay according to an embodiment of the present invention, fig. 6 is a flowchart of a method for fabricating a silicon-based organic electroluminescent microdisplay shown in fig. 5, and referring to fig. 5 and fig. 6, the method for fabricating a silicon-based organic electroluminescent microdisplay includes:
s210, forming a photoresist pattern on the silicon-based circuit substrate, wherein the photoresist in the photoresist pattern is positioned between any two adjacent first electrodes, and the surface of one side of each first electrode, which is far away from the silicon-based substrate, is flush with the surface of one side of the photoresist pattern, which is far away from the silicon-based substrate; the first electrodes are mutually insulated and evenly distributed on the silicon-based circuit substrate.
Referring to fig. 6 a), this step is essentially a process of filling photoresist between the first electrodes 11 of the silicon-based circuit substrate 10, and the slit pattern between the first electrodes 11 is the photoresist pattern 71.
And S220, coating an aqueous solution of a buffer material on the photoresist pattern and the plurality of first electrodes to form a buffer layer.
Referring to b) of fig. 6, when the aqueous solution of the buffer material is coated on the silicon-based circuit substrate 10 by spin coating, spray coating, etc., the aqueous solvent is evaporated, and the buffer material remained on the silicon-based circuit substrate 10 can form the uniform buffer layer 20. After this step, in order to ensure that the water in the aqueous solution is sufficiently evaporated, so as to avoid the pollution and corrosion of the water to the organic light emitting material, and to solidify the buffer layer, so as to ensure the hole injection capability of the buffer layer 20, the buffer layer 20 needs to be annealed. Specifically, the annealing temperature of the buffer layer can be set to be 80-250 ℃ and the annealing time can be set to be 30min-2h during the annealing treatment of the buffer layer. Preferably, the annealing temperature can be set to 120 ℃ and the annealing time can be set to 30 min.
S230, dissolving the photoresist pattern and the film layer on the photoresist pattern by adopting an oil-soluble organic solvent to form a plurality of buffer patterns; the buffer patterns are stacked up and down in one-to-one correspondence with the first electrodes.
Referring to c) of fig. 6, the step is a process of peeling off the photoresist pattern 71 between the first electrodes 11, and at the same time, the buffer layer formed on the photoresist pattern 71 is also released. At this time, the structures remaining on the silicon-based circuit substrate 10 are only the first electrode 11 and the buffer pattern 21 located on the first electrode 11. In other words, the buffer layer 20 thereon may be patterned using the patterned photoresist pattern 71, and after the photoresist pattern 71 is stripped, the corresponding buffer pattern 21 is finally formed on the upper surface of the first electrode 11 for preparing the sub-pixel. For example, as the oil-soluble organic solvent, an organic compound such as N-methylpyrrolidone can be generally used.
And S240, sequentially forming an organic light emitting layer and a second electrode on one side of each buffer pattern, which is far away from the first electrode, so as to form a plurality of sub-pixels.
And S250, sequentially forming a packaging layer, a color filter layer and cover plate glass on one side of the sub-pixel, which is far away from the silicon-based circuit substrate.
Referring to fig. 6 d) and e), the two steps are to perform a subsequent process of manufacturing the silicon-based organic electroluminescent micro-display on the basis of the first electrode and the buffer pattern, which is not described herein again.
Specifically, in the process of forming the photoresist pattern in step S210, the method may further include:
and S211, forming a photoresist layer on the silicon-based circuit substrate, wherein the photoresist layer covers the first electrode 11 and the silicon-based substrate 12.
The photoresist layer can be made of a positive photoresist or a negative photoresist material, and covers the first electrode 11 and the silicon-based substrate 12, so as to ensure the filling of the gap between the first electrodes 11 and facilitate the preparation of subsequent photoresist patterns.
S212, curing the photoresist layer.
The curing process may specifically be ultraviolet curing or plasma curing. It will be appreciated that the curing process of the photoresist layer depends primarily on the material of the photoresist layer, and is not intended to be limiting.
And S213, exposing and developing the photoresist layer to form a photoresist pattern.
This step is substantially after the photoresist layer is exposed. In the process of thinning the photoresist layer using the developing solution, the photoresist layer becomes the shape of the photoresist pattern 71 after being gradually thinned.
In another embodiment of the present invention, since the wafer provided by the existing wafer factory forms the CMOS bottom layer circuit, the anode of the sub-pixel is not formed therein, i.e. the silicon-based circuit substrate includes a silicon-based substrate and a driving circuit located on the silicon-based substrate, and the driving circuit includes a plurality of guiding electrodes. The guide electrode is a tungsten hole formed on the wafer, and the tungsten hole is used as the guide electrode to be electrically connected with the electrode of the sub-pixel. Based on the method, the embodiment of the invention also provides a specific preparation method of the silicon-based organic electroluminescent micro-display. Fig. 7 is a flowchart of another method for fabricating a silicon-based organic electroluminescent microdisplay according to an embodiment of the present invention, fig. 8 is a flowchart of a method for fabricating a silicon-based organic electroluminescent microdisplay shown in fig. 5, and referring to fig. 5 and 8, the method for fabricating a silicon-based organic electroluminescent microdisplay includes:
s310, forming a photoresist pattern on the silicon-based circuit substrate, wherein the photoresist in the photoresist pattern is positioned between any two adjacent guide electrodes; the first electrodes are mutually insulated and evenly distributed on the silicon-based circuit substrate.
Referring to fig. 8 a), this step is essentially a process of adding a photoresist pattern between the guiding electrodes 13 of the silicon-based circuit substrate 10, and the region between the guiding electrodes 13 is the photoresist pattern 71. In other words, after the photoresist pattern 71 is formed in this step, the hollowed-out region in the photoresist pattern 71 is the region where the guide electrode 13 is located.
And S320, forming a first electrode layer on the photoresist pattern and the guide electrode.
Referring to fig. 8 b), at this time, the first electrode layer 80 covers the photoresist pattern 71 and fills the hollowed-out region of the photoresist pattern 71, and at this time, the first electrode layer 80 is electrically connected to each of the guide electrodes 13 in the hollowed-out region.
And S330, coating an aqueous solution of a buffer material on the first electrode layer to form a buffer layer.
Referring to fig. 8 c), the step is a process of preparing the buffer layer by spin coating or spray coating, and after the step, the buffer layer 20 needs to be annealed, so that the buffer layer 20 is cured to remove moisture therein and avoid corrosion of the organic light emitting material. The annealing temperature can be set to 80-250 ℃ optionally, and the annealing time can be set to 30min-2 h.
S340, dissolving the photoresist pattern and the film layer on the photoresist pattern by adopting an oil-soluble organic solvent to form a plurality of buffer patterns; the buffer patterns are stacked up and down in one-to-one correspondence with the first electrodes.
Referring to d) of fig. 8, the photoresist pattern 71 is stripped, and the first electrode layer 80 and the buffer layer 20 formed on the photoresist pattern 71 are also separated. At this time, the structures remaining on the silicon-based circuit substrate 10 are only the first electrode 11 and the buffer pattern 21 located on the first electrode 11. In other words, the first electrode layer 80 and the buffer layer 20 positioned thereon may be patterned using the patterned photoresist pattern 71, and after the photoresist pattern 71 is stripped, a plurality of first electrodes 11 and corresponding buffer patterns 21 are finally formed, thereby preparing the sub-pixels.
And S350, sequentially forming an organic light-emitting layer and a second electrode on one side of each buffer pattern, which is far away from the first electrode, so as to form a plurality of sub-pixels.
And S360, sequentially forming a packaging layer, a color filter layer and cover plate glass on one side of the sub-pixel, which is far away from the silicon-based circuit substrate.
Referring to fig. 8 e) and f), the two steps are to perform a subsequent process of manufacturing the silicon-based organic electroluminescent micro-display on the basis of the first electrode and the buffer pattern, which is not described herein again.
Similarly, the process of forming the photoresist pattern in step S310 may specifically include:
s311, forming a photoresist layer on the silicon-based circuit substrate, wherein the photoresist layer covers the guide electrode and the silicon-based substrate;
wherein, the photoresist layer can be made of positive photoresist or negative photoresist material, and the photoresist layer covers the guide electrode 13 and the silicon-based substrate 12.
And S312, curing the photoresist layer.
The curing process may specifically be ultraviolet curing or plasma curing. It will be appreciated that the curing process of the photoresist layer depends primarily on the material of the photoresist layer, and is not intended to be limiting.
And S313, exposing and developing the photoresist layer to form a photoresist pattern.
In this step, the photoresist is exposed through a photomask, and then a part of the photoresist is removed through development, i.e., a developing solution is used. In this step, the pattern of the photomask determines the photoresist pattern, and in the case of a positive photoresist, the exposed region is removed by a developer, and therefore, the pattern of the photomask needs to be set to match the target photoresist pattern, thereby realizing pattern transfer from the photomask to the photoresist layer.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A silicon-based organic electroluminescent microdisplay, comprising:
the circuit board comprises a silicon-based circuit substrate and a driving circuit, wherein the silicon-based circuit substrate comprises a silicon-based substrate and the driving circuit positioned on the silicon-based substrate;
the plurality of sub-pixels are arranged on the silicon-based circuit substrate and comprise a first electrode, a buffer pattern, an organic light-emitting layer and a second electrode which are sequentially stacked, and the first electrode is electrically connected with the driving circuit;
the buffer pattern is formed by patterning a buffer layer, and the buffer layer is prepared by using an aqueous solution of a buffer material.
2. The silicon-based organic electroluminescent microdisplay of claim 1 further comprising an encapsulation layer, a color filter layer and a cover glass in sequential stacked arrangement, the color filter layer comprising a plurality of color filter dots;
the packaging layer is positioned on one side of the plurality of sub-pixels, which is far away from the silicon-based circuit substrate, and covers the plurality of sub-pixels;
the color filter layer is positioned on one side of the packaging layer, which is far away from the sub-pixels, and the color filter points correspond to the sub-pixels one by one;
the cover plate glass is positioned on one side of the color filter layer, which is far away from the packaging layer.
3. A preparation method of a silicon-based organic electroluminescent micro-display is characterized by comprising the following steps:
forming a buffer layer on a plurality of first electrodes on a silicon-based circuit substrate by using an aqueous solution of a buffer material, wherein the plurality of first electrodes are uniformly distributed on the silicon-based circuit substrate;
patterning the buffer layer to form a plurality of buffer patterns, wherein the buffer patterns and the first electrodes are stacked up and down in a one-to-one correspondence manner;
and sequentially forming an organic light-emitting layer and a second electrode on one side of each buffer pattern, which is far away from the first electrode, so as to form a plurality of sub-pixels.
4. A method of fabricating a silicon-based organic electroluminescent microdisplay according to claim 3 in which the silicon-based circuit substrate comprises a silicon-based substrate and a driver circuit on the silicon-based substrate, the driver circuit comprising a plurality of the first electrodes;
forming a buffer layer on a plurality of first electrodes on a silicon-based circuit substrate using an aqueous solution of a buffer material, comprising:
forming a photoresist pattern on the silicon-based circuit substrate, wherein photoresist in the photoresist pattern is positioned between any two adjacent first electrodes, and the surface of one side of the first electrode, which is far away from the silicon-based substrate, is flush with the surface of one side of the photoresist pattern, which is far away from the silicon-based substrate;
coating an aqueous solution of a buffer material on the photoresist pattern and the plurality of first electrodes to form a buffer layer;
patterning the buffer layer to form a plurality of buffer patterns, including:
and dissolving the photoresist pattern and stripping the film layer on the photoresist pattern by adopting an oil-soluble organic solvent to form a plurality of buffer patterns.
5. The method of fabricating a silicon-based organic electroluminescent microdisplay of claim 4 in which forming a photoresist pattern on the silicon-based circuit substrate comprises:
forming a photoresist layer on the silicon-based circuit substrate, wherein the photoresist layer covers the first electrode and the silicon-based substrate;
curing the photoresist layer;
and exposing and developing the photoresist layer to form the photoresist pattern.
6. The method of fabricating a silicon-based organic electroluminescent microdisplay of claim 1 in which the silicon-based circuit substrate comprises a silicon-based substrate and a driver circuit on the silicon-based substrate, the driver circuit comprising a plurality of steering electrodes;
forming a buffer layer on a plurality of first electrodes on a silicon-based circuit substrate using an aqueous solution of a buffer material, comprising:
forming a photoresist pattern on the silicon-based circuit substrate, wherein photoresist in the photoresist pattern is positioned between any two adjacent guide electrodes;
forming a first electrode layer on the photoresist pattern and the guide electrode;
coating an aqueous solution of a buffer material on the first electrode layer to form a buffer layer;
patterning the buffer layer to form a plurality of buffer patterns, including:
and dissolving the photoresist pattern and the film layer on the photoresist pattern by adopting an oil-soluble organic solvent to form a plurality of buffer patterns.
7. The method of fabricating a silicon-based organic electroluminescent microdisplay of claim 6 in which forming a photoresist pattern on the silicon-based circuit substrate comprises:
forming a photoresist layer on the silicon-based circuit substrate, wherein the photoresist layer covers the guide electrode and the silicon-based substrate;
curing the photoresist layer;
and exposing and developing the photoresist layer to form the photoresist pattern.
8. The method of fabricating a silicon-based organic electroluminescent microdisplay of claim 4 or 6 in which an oil-soluble organic solvent is used to dissolve the photoresist pattern and strip the film layer over the photoresist pattern before forming a plurality of buffer patterns, the method further comprising:
and annealing the buffer layer.
9. The method of fabricating a silicon-based organic electroluminescent microdisplay of claim 8 in which the annealing temperature of the annealing process is 80-250 ℃ and the annealing time is 30min-2 h.
10. The method of fabricating a silicon-based organic electroluminescent microdisplay of claim 1 in which, after sequentially forming an organic light-emitting layer and a second electrode on a side of each of the buffer patterns facing away from the first electrode to form a plurality of sub-pixels, further comprising:
and sequentially forming a packaging layer, a color filter layer and cover plate glass on one side of the sub-pixel, which is far away from the silicon-based circuit substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011118174.XA CN112510068A (en) | 2020-10-19 | 2020-10-19 | Silicon-based organic electroluminescent micro-display and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011118174.XA CN112510068A (en) | 2020-10-19 | 2020-10-19 | Silicon-based organic electroluminescent micro-display and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112510068A true CN112510068A (en) | 2021-03-16 |
Family
ID=74953969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011118174.XA Pending CN112510068A (en) | 2020-10-19 | 2020-10-19 | Silicon-based organic electroluminescent micro-display and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112510068A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113140454A (en) * | 2021-03-24 | 2021-07-20 | 南京昀光科技有限公司 | Display panel and manufacturing method thereof |
| CN113363301A (en) * | 2021-06-02 | 2021-09-07 | 南京昀光科技有限公司 | Silicon-based OLED display panel and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1397986A (en) * | 2001-07-23 | 2003-02-19 | 北京大学 | Method for stripping metal |
| CN1400674A (en) * | 2002-08-05 | 2003-03-05 | 浙江大学 | Preparation method of zinc oxide UV photodetector prototype device |
| CN1855580A (en) * | 2000-09-25 | 2006-11-01 | 大日本印刷株式会社 | Electroluminescent element |
| CN103843165A (en) * | 2011-10-25 | 2014-06-04 | 大日本印刷株式会社 | Material for positive hole injection transport layer, ink for positive hole injection transport layer, device, and production methods for same |
| CN105093823A (en) * | 2015-06-03 | 2015-11-25 | 京东方科技集团股份有限公司 | Manufacturing method for slit electrode, slit electrode and display panel |
| CN108172699A (en) * | 2018-01-18 | 2018-06-15 | 华南理工大学 | A kind of organic light emitting display panel and preparation method thereof |
| CN110098299A (en) * | 2018-01-30 | 2019-08-06 | 山东浪潮华光光电子股份有限公司 | A kind of stripping electrode method in LED metal electrode production |
| CN110148674A (en) * | 2019-04-28 | 2019-08-20 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof and display device |
-
2020
- 2020-10-19 CN CN202011118174.XA patent/CN112510068A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1855580A (en) * | 2000-09-25 | 2006-11-01 | 大日本印刷株式会社 | Electroluminescent element |
| CN1397986A (en) * | 2001-07-23 | 2003-02-19 | 北京大学 | Method for stripping metal |
| CN1400674A (en) * | 2002-08-05 | 2003-03-05 | 浙江大学 | Preparation method of zinc oxide UV photodetector prototype device |
| CN103843165A (en) * | 2011-10-25 | 2014-06-04 | 大日本印刷株式会社 | Material for positive hole injection transport layer, ink for positive hole injection transport layer, device, and production methods for same |
| CN105093823A (en) * | 2015-06-03 | 2015-11-25 | 京东方科技集团股份有限公司 | Manufacturing method for slit electrode, slit electrode and display panel |
| CN108172699A (en) * | 2018-01-18 | 2018-06-15 | 华南理工大学 | A kind of organic light emitting display panel and preparation method thereof |
| CN110098299A (en) * | 2018-01-30 | 2019-08-06 | 山东浪潮华光光电子股份有限公司 | A kind of stripping electrode method in LED metal electrode production |
| CN110148674A (en) * | 2019-04-28 | 2019-08-20 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof and display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113140454A (en) * | 2021-03-24 | 2021-07-20 | 南京昀光科技有限公司 | Display panel and manufacturing method thereof |
| CN113363301A (en) * | 2021-06-02 | 2021-09-07 | 南京昀光科技有限公司 | Silicon-based OLED display panel and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10811475B2 (en) | Array substrate, manufacturing method thereof and display device | |
| US9722005B2 (en) | Light-emitting device, array substrate, display device and manufacturing method of light-emitting device | |
| JP3948082B2 (en) | Method for manufacturing organic electroluminescence element | |
| KR101322310B1 (en) | Organic light emitting display device and and method for fabricating the same | |
| CN109390372B (en) | Pixel structure, forming method thereof and display screen | |
| CN106783883B (en) | Display substrate and preparation method thereof | |
| JP2007299741A (en) | Organic electroluminescent device and its manufacturing method | |
| WO2020233284A1 (en) | Display panel and preparation method therefor, and display device | |
| EP3333922B1 (en) | Organic luminescence unit and manufacturing method therefor | |
| JP2012238580A (en) | Method for manufacturing organic el display device | |
| CN108565352B (en) | Organic light emitting diode display panel, manufacturing method thereof and display device | |
| WO2020224010A1 (en) | Oled display panel and manufacturing method therefor | |
| CN113241416B (en) | Light-emitting substrate, preparation method thereof and light-emitting device | |
| JP2012216296A (en) | Manufacturing method of organic light-emitting device | |
| US20220320258A1 (en) | Display substrate and manufacturing method thereof, and display device | |
| CN105489611A (en) | Printed type light emitting display and manufacturing method therefor | |
| CN112510068A (en) | Silicon-based organic electroluminescent micro-display and preparation method thereof | |
| WO2018036258A1 (en) | Oled device and manufacturing method therefor, display panel, and display apparatus | |
| KR20090021443A (en) | Organic electroluminescent device and method for fabricating thereof | |
| JP2009170336A (en) | Manufacturing method of display device | |
| US11903262B2 (en) | Display panel, method for manufacturing same, and display device | |
| EP4024468A1 (en) | Display substrate, manufacturing method therefor, and display device | |
| KR100417921B1 (en) | Canless Organic Electro Luminescence Display | |
| US11974472B2 (en) | Display substrate and manufacturing method thereof, and display device | |
| CN111725432B (en) | Manufacturing method of OLED anode, OLED display device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |