CN1400674A - Preparation method of zinc oxide UV photodetector prototype device - Google Patents
Preparation method of zinc oxide UV photodetector prototype device Download PDFInfo
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- CN1400674A CN1400674A CN02136425A CN02136425A CN1400674A CN 1400674 A CN1400674 A CN 1400674A CN 02136425 A CN02136425 A CN 02136425A CN 02136425 A CN02136425 A CN 02136425A CN 1400674 A CN1400674 A CN 1400674A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
A preparation method of this invented Zno UV-light electric detector prototype device contains the following steps 1) spinly coating a photoresist to photolithograph an electrode pattern and remaining part is covered by the photoresist 2) depositing a metal layer on Zno surface with magnet control spurt method and thickness of the metal layer is smaller than that of the photoresist 3). putting the metal covered Zno film into acetone solution dissolving the photoresist for ultrasonic cleaning removing the photoresist and the metal layer on the photoresist surface 4) annealing under protection, removing organic dirt on the electrode surface and increasing Ohmic contact character to effectively prevent performance from turning bad due to erosion to the Zno surface.
Description
Technical field
The present invention relates to the preparation method of zinc oxide UV photodetector prototype device.
Background technology
Zinc oxide (ZnO) is pricker zinc ore structure, the direct band gap semiconductor material with wide forbidden band, and the energy gap under the room temperature is 3.3eV.ZnO can grow being lower than under 500 ℃ of temperature, and is all much lower than the preparation temperature of GaN, SiC and other II-IV family semiconductor wide-band gap material; The price of zinc is more cheap; And ZnO can obtain adjustable band gap (from 3.3-4eV) by regulating the Mg component by forming alloy with MgO, covers the ultraviolet spectral range of broad.These characteristics make zinc oxide having many potential advantages aspect the detection of ultraviolet band, and good prospects for application is arranged.
In the technology of preparation ZnO ultraviolet detector antetype device, when removing photoresist and metal, all adopt the method for chemical wet etching at present.But ZnO is the both sexes semi-conducting materials, both has been dissolved in acid, is dissolved in alkali again, therefore in the wet method photoetching process, must can cause corrosion to the ZnO film surface simultaneously, influences the performance of device.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of zinc oxide UV photodetector prototype device is to avoid contacting of ZnO film and corrosive liquid.
The inventive method may further comprise the steps successively:
1) at zinc-oxide film surface spin coating one deck photoresist, a photoetching carves electrode pattern, and except that electrode pattern, remainder still covers photoresist coating;
2) use magnetron sputtering method at zinc-oxide film surface deposition metal level, make the thickness of metal layer thickness less than photoresist coating;
3) zinc-oxide film that will cover metal level is put in the acetone soln of solubilized photoresist and carries out ultrasonic cleaning, flush away photoresist and be deposited on the metal level on photoresist surface;
4) under protective atmosphere, anneal, remove the organic contamination of electrode surface, improve ohmic contact characteristic.
The metal of magnetron sputtering can be aluminium or gold or platinum among the present invention.Said protective atmosphere can be nitrogen or argon gas.
Usually, the thickness that makes photoresist is at 0.8～1.2 micron, and metal layer thickness is at 0.2～0.5 micron.The substrate of zinc-oxide film can adopt silicon, sapphire or glass.
The present invention adopts at first photoresist in ZnO film surface spin coating, a photoetching carves electrode pattern, then with the metal level of the direct deposit thickness of magnetron sputtering method less than photoresist coating thickness, the ZnO film that will cover metal level again is placed on ultrasonic cleaning in the acetone soln that very easily dissolves photoresist, because metal layer thickness is thinner than photoresist, therefore as the metal of electrode and be deposited between the metal on the photoresist and have step, when photoresist was dissolved, the metal level that is deposited on the photoresist also was cleaned.In contrast, because the particle energy of magnetron sputtering is very high, metal electrode and the densification of ZnO film surface combination, so electrode can not come off in ultrasonic cleaning, can effectively prevent to make the device performance variation owing to the ZnO surface is corroded.
Description of drawings
Accompanying drawing is a zinc-oxide film ultraviolet detector antetype device interdigited electrode microphoto.
Embodiment
Further specify the present invention below in conjunction with embodiment.
The inventive method may further comprise the steps successively:
1. the photoresist of 1 micron thickness in the spin coating of ZnO film surface, a photoetching carves interdigited electrode (as shown in Figure 1), and except that electrode pattern, remainder still covers photoresist coating;
2. with magnetron sputtering method direct plated metal aluminium on the sample after the photoetching, the metallic aluminium layer thickness is controlled at 0.3 micron.
3. the ZnO film that will cover metallic aluminium is placed on and carries out ultrasonic cleaning in the acetone soln, washes photoresist and the aluminium lamination that is deposited on the photoresist off, prepares electrode.
4. the organic contamination in surface of ultraviolet detector antetype device is removed in sample annealing 6 minutes under 450 ℃, nitrogen atmosphere protection, improves ohmic contact characteristic.
Claims (3)
1. the preparation method of zinc oxide UV photodetector prototype device is characterized in that may further comprise the steps successively:
1) at zinc-oxide film surface spin coating one deck photoresist, a photoetching carves electrode pattern, and except that electrode pattern, remainder still covers photoresist coating;
2) use magnetron sputtering method at zinc-oxide film surface deposition metal level, make the thickness of metal layer thickness less than photoresist coating;
3) zinc-oxide film that will cover metal level is put in the acetone soln of solubilized photoresist and carries out ultrasonic cleaning, flush away photoresist and be deposited on the metal level on photoresist surface;
4) under protective atmosphere, anneal, remove the organic contamination of electrode surface, improve ohmic contact characteristic.
2. the preparation method of zinc oxide UV photodetector prototype device according to claim 1, the metal that it is characterized in that magnetron sputtering is aluminium or gold or platinum.
3. the preparation method of zinc oxide UV photodetector prototype device according to claim 1 is characterized in that said protective atmosphere is nitrogen or argon gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021364257A CN1182593C (en) | 2002-08-05 | 2002-08-05 | Preparation method of zinc oxide UV photodetector prototype device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021364257A CN1182593C (en) | 2002-08-05 | 2002-08-05 | Preparation method of zinc oxide UV photodetector prototype device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1400674A true CN1400674A (en) | 2003-03-05 |
| CN1182593C CN1182593C (en) | 2004-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB021364257A Expired - Fee Related CN1182593C (en) | 2002-08-05 | 2002-08-05 | Preparation method of zinc oxide UV photodetector prototype device |
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| CN (1) | CN1182593C (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100353578C (en) * | 2005-11-18 | 2007-12-05 | 浙江大学 | UV electroluminescence device of silicon base zinc oxide and preparation process thereof |
| CN100438084C (en) * | 2005-09-30 | 2008-11-26 | 中国科学院物理研究所 | Light detector based on ZnO/MgB heterojunction |
| CN100459179C (en) * | 2005-09-30 | 2009-02-04 | 中国科学院物理研究所 | Production of ZnO/mgB heterojunction material |
| CN100463232C (en) * | 2006-12-20 | 2009-02-18 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
| CN102694052A (en) * | 2011-03-22 | 2012-09-26 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
| CN103117333A (en) * | 2011-11-16 | 2013-05-22 | 常州光电技术研究所 | Transparent electrode manufacturing method improving device yield rate |
| CN103545397A (en) * | 2013-10-29 | 2014-01-29 | 中国科学院化学研究所 | Film ultraviolet light detector, manufacturing method thereof and application thereof |
| CN104779314B (en) * | 2014-06-27 | 2017-02-08 | 纳米新能源（唐山）有限责任公司 | Ultraviolet photosensitive sensor based on zinc oxide and preparation method of ultraviolet photosensitive sensor |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
| US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
| CN108014784A (en) * | 2017-11-02 | 2018-05-11 | 五邑大学 | A kind of metal nanoparticle enhancing porous ZnO photocatalytic degradation film and preparation method thereof |
| US10126165B2 (en) | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
| CN112510108A (en) * | 2020-11-24 | 2021-03-16 | 西安交通大学 | Zinc oxide bridge ultraviolet detection unit and preparation method thereof |
| CN112510068A (en) * | 2020-10-19 | 2021-03-16 | 南京昀光科技有限公司 | Silicon-based organic electroluminescent micro-display and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100460838C (en) * | 2006-04-14 | 2009-02-11 | 中国科学院上海技术物理研究所 | Zinc oxide based blind ultraviolet detector |
-
2002
- 2002-08-05 CN CNB021364257A patent/CN1182593C/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100438084C (en) * | 2005-09-30 | 2008-11-26 | 中国科学院物理研究所 | Light detector based on ZnO/MgB heterojunction |
| CN100459179C (en) * | 2005-09-30 | 2009-02-04 | 中国科学院物理研究所 | Production of ZnO/mgB heterojunction material |
| CN100353578C (en) * | 2005-11-18 | 2007-12-05 | 浙江大学 | UV electroluminescence device of silicon base zinc oxide and preparation process thereof |
| CN100463232C (en) * | 2006-12-20 | 2009-02-18 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
| CN102694052A (en) * | 2011-03-22 | 2012-09-26 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
| CN103117333A (en) * | 2011-11-16 | 2013-05-22 | 常州光电技术研究所 | Transparent electrode manufacturing method improving device yield rate |
| CN103545397A (en) * | 2013-10-29 | 2014-01-29 | 中国科学院化学研究所 | Film ultraviolet light detector, manufacturing method thereof and application thereof |
| CN103545397B (en) * | 2013-10-29 | 2016-02-24 | 中国科学院化学研究所 | Thin film ultraviolet detector and preparation method thereof and application |
| CN104779314B (en) * | 2014-06-27 | 2017-02-08 | 纳米新能源（唐山）有限责任公司 | Ultraviolet photosensitive sensor based on zinc oxide and preparation method of ultraviolet photosensitive sensor |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
| US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
| US10126165B2 (en) | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
| US10718662B2 (en) | 2015-07-28 | 2020-07-21 | Carrier Corporation | Radiation sensors |
| US11029202B2 (en) | 2015-07-28 | 2021-06-08 | Carrier Corporation | Radiation sensors |
| CN108014784A (en) * | 2017-11-02 | 2018-05-11 | 五邑大学 | A kind of metal nanoparticle enhancing porous ZnO photocatalytic degradation film and preparation method thereof |
| CN112510068A (en) * | 2020-10-19 | 2021-03-16 | 南京昀光科技有限公司 | Silicon-based organic electroluminescent micro-display and preparation method thereof |
| CN112510108A (en) * | 2020-11-24 | 2021-03-16 | 西安交通大学 | Zinc oxide bridge ultraviolet detection unit and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1182593C (en) | 2004-12-29 |
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