CN100438084C - Light detector based on ZnO/MgB heterojunction - Google Patents

Light detector based on ZnO/MgB heterojunction Download PDF

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CN100438084C
CN100438084C CNB2005101078273A CN200510107827A CN100438084C CN 100438084 C CN100438084 C CN 100438084C CN B2005101078273 A CNB2005101078273 A CN B2005101078273A CN 200510107827 A CN200510107827 A CN 200510107827A CN 100438084 C CN100438084 C CN 100438084C
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mgb
zno
film
detector
heterojunction
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CN1941425A (en
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赵嵩卿
周岳亮
赵昆
刘震
王淑芳
韩鹏
相文峰
陈正豪
吕惠宾
程波林
何萌
杨国桢
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Institute of Physics of CAS
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Institute of Physics of CAS
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Abstract

The invention is concerned with the detector based on ZnO/MgB2 heterojunction material manufacture, includes: a base, a layer of MgB2 film growing on the base, the characteristic is: a ZnO layer growing on the MgB2 film; the thickness of the MgB2 film is 10 nanometers to 10 microns; the thickness of the ZnO film is 10 nanometers to 10 microns; sets the first pole on the MgB2 film, sets the second pole on the ZnO film, the first pole leading line and the second pole leading line connects with the electrode, and a resistance is in series between the two electrode leading lines, the end of the two electrode leading lines connect with the voltage testing equipment. The detector can get the directive photo-voltage signal that is above 6 milli-volts to 25 milli-volts when the detector is under the wave length of 48nm-100 mum.

Description

Based on ZnO/MgB 2The photo-detector of heterojunction
Technical field
The present invention relates to the infrared induction detector, particularly relate to based on ZnO/MgB 2Heterojunction infrared, as seen to ultraviolet light detector.
Background technology
Nearly decades, because zinc oxide has caused people's very big interest in the potential use aspect blue streak and ultraviolet diode and the laser, zinc oxide is a kind of wide bandgap semiconductor, and its bandwidth is 3.37eV, so it can be used as a kind of detector of ultraviolet light.As document P.Sharma and K.Sreenivas, Appl.Phys.Lett., Vol.83,27 (2003) and W.Yang, S.S.Hullavarad, B.Nagaraj, I.Takeuchi, R.P.Sharma, T.Venkatesan, R.D.Vispute, and H.Shen, Appl.Phys.Lett.82,3424 (2003).Above-mentioned detector is surveyed the wavelength narrow range, only limits to survey ultraviolet light; And in numerous documents, also do not find the report of zinc oxide as infrared detector.The invention provides a kind of based on zinc oxide and MgB 2The far red light of heterojunction preparation method and products thereof to visible light to the deep UV (ultraviolet light) detector.
Summary of the invention
The objective of the invention is to: overcome existing detector and survey the wavelength narrow range, only limit to survey the defective of ultraviolet light; Thereby provide a kind of survey wavelength far infrared to visible light to deep UV (ultraviolet light) based on ZnO/MgB 2The new sensitive detection parts that heterojunction material is made.
The object of the present invention is achieved like this:
Provided by the invention based on ZnO/MgB 2The detector that heterojunction material is made comprises: a substrate, growth one deck MgB in substrate 2Film is again at MgB 2Growth layer of ZnO film on the film; MgB wherein 2Film thickness is in 10 nanometers～10 micron; ZnO film thickness is in 10 nanometers～10 micron; First electrode is arranged on MgB 2On the film, second electrode is arranged on the ZnO film, first contact conductor and second contact conductor are connected on first electrode and second electrode, and between first contact conductor and second contact conductor series resistance, the output of two contact conductors connects amplifying circuit; Can also terminally connect voltage tester equipment.
In above-mentioned technical scheme, also be included in an electric capacity in parallel between first contact conductor and second contact conductor.
In above-mentioned technical scheme, described substrate is selected from magnesium oxide, white stone, quartz plate, lanthanum aluminate or strontium titanates etc.
Preparation ZnO/MgB provided by the invention 2The method of heterojunction material is utilized the equipment and the technology that prepare film, carries out according to the following steps:
1. at first prepare pioneer MgB 2Film: adopt conventional pulse laser made membrane method, chemical vapour deposition technique, sputtering method, physical vaporous deposition or supersonic spraying, preparation thickness is 10 nanometers～10 micron MgB on magnesium oxide or white stone substrate 2Pioneer's boron film, wherein MgB 2It rises and falls the surface of pioneer's boron film less than 50nm;
2. the MgB that then step 1 is being prepared 2The magnesium of boron film and 0.1～3.0 gram is enclosed in the quartz ampoule, and this quartz ampoule volume is 1～10 cubic centimetre, and quartz ampoule is evacuated down to 10 -3～10 -5The handkerchief rear enclosed is placed on sintering in the Muffle furnace, and temperature is 700～1200 degrees centigrade, and making magnesium steam and boron reaction time is 40 minutes, obtains high-quality MgB 2Film;
3. raw material is comprised Zinc oxide powder or doping zinc-oxide powder, wherein the doping zinc-oxide powder comprises: 0.5～5% (press the atomic ratio of zinc oxide and doped chemical boron, aluminium, gallium, the indium) boron that mixes, aluminium, gallium or indium (or oxide of boron, aluminium, gallium, indium composition), through well-mixed doping zinc-oxide powder, be pressed into diameter and be 1～10 centimetre, thickness is the cake of 0.5～20 millimeters thick, wherein institute's applied pressure is 10～100MP; Put into the electric furnace sintering then, its temperature is under 900～1500 degrees centigrade, and sintering obtained the zinc oxide target of high-purity zinc oxide target or doping in 4～48 hours, and zinc oxide target is installed on the target position in the pulsed laser deposition equipment vacuum chamber; Again with the MgB of step 2 preparation 2Film is installed on the interior chip bench of pulsed laser deposition equipment vacuum chamber, with molecular pump vacuum chamber is extracted into 1 * 10 -3～5 * 10 -8The vacuum that Pa is above is simultaneously with the MgB on the chip bench 2It is 150 ℃-600 ℃ that film is heated to temperature;
4. opening excimer pulse laser, is that the burnt excimer pulsed laser to 450 milli Jiao of 120 millis focuses on zinc oxide target or the doping zinc-oxide target with energy, and the bombardment zinc oxide target deposits, and range 30-50 millimeter sedimentation time 10-200 minute, obtains MgB 2Film thickness in 10 nanometers～10 micron, the ZnO/MgB of ZnO film thickness in 10 nanometers～10 micron 2Heterojunction material;
5. get the heterojunction material that a step 4. is done, make the circuit of form as shown in Figure 1, first electrode is arranged on MgB 2On the film, second electrode is arranged on the ZnO film, first contact conductor and second contact conductor are connected on first electrode and second electrode, and the megohm resistance of connecting between first contact conductor and second contact conductor, and the output of two contact conductors connects amplifying circuit; Can also terminally connect voltage tester equipment; Its wavelength is that the pulse laser of 248nm-10 μ is done detection light, and laser energy is that 1 milli is burnt, and square centimeter of the area of light beam impinges upon the part of the zinc oxide of heterojunction, obtains the direct voltage output of about 6-25mV with oscilloscope measurement at the two ends of film;
By the 6-25mV of the detector output of step 5. preparation can be connected to common voltage amplifier circuit, obtain basic Infrared Detectors
Advantage of the present invention:
The ZnO/MgB that the present invention prepares 2Heterojunction material utilizes this ZnO/MgB again 2Heterojunction material is prepared photo-detector, as shown in Figure 1.This this ZnO/MgB 2Heterojunction material is prepared the simple in structure of photo-detector, has under all-wave long (from deep ultraviolet to the far infrared) rayed to obtain direct photogenic voltage signal, and signal has reached more than the 6-25 millivolt, has expanded zinc oxide and MgB 2The range of application of film.Realized at ZnO/MgB first 2On the heterojunction by infrared light to visible light to light activated photogenic voltage signal outside, make basic detector unit; The photogenic voltage signal of the detector unit that this is basic as shown in Figure 2.
Method of the present invention is simple, required ZnO/MgB 2Heterojunction can just can prepare high-quality zinc-oxide film and MgB with chemical vapor depsotition equipment, pulsed laser deposition equipment, sputtering equipment, other film deposition equipment 2Film heterojunction.
Description of drawings
Fig. 1 is ZnO/MgB of the present invention 2The photo-detector structure chart that heterojunction material is manufactured
Fig. 2 is ZnO/MgB of the present invention 2The photogenic voltage signal graph of the photo-detector that heterojunction material is manufactured
Fig. 3 is ZnO/MgB of the present invention 2Another example structure of the photo-detector that heterojunction material is manufactured figure
The drawing explanation:
MgB 2Film-1 ZnO film-2 first electrode-3
Second electrode-4, first contact conductor-5, second contact conductor-6
The substrate-9 of resistance-7 electric capacity-8
Voltage tester equipment-10
Embodiment
Embodiment 1,
With reference to Fig. 1, below in an embodiment in conjunction with the accompanying drawings to of the present invention based on ZnO/MgB 2The photo-detector of heterojunction is elaborated:
At first prepare ZnO/MgB 2Heterojunction material, its preparation method may further comprise the steps:
1. adopt conventional pulse laser filming technology, preparation thickness is the MgB of 100 nanometers in magnesium oxide or white stone substrate 9 2Pioneer's boron film; Then the MgB that makes 2High-purity magnesium metal of pioneer's boron film and 0.3 gram is enclosed in the quartz ampoule, the quartz ampoule volume is 3 cubic centimetres, the quartz ampoule vacuum is extracted into the 10-5 handkerchief, quartz ampoule is put into the Muffle furnace sintering, wherein sintering temperature is 900 ℃, make the reaction of magnesium steam and boron, the reaction time be obtained in 40 minutes 600nm thick, rise and fall less than the MgB of 100nm 2Film 1;
Purity be 99.99% Zinc oxide powder be pressed into diameter be 1～10 centimetre, thickness is the cake of 0.5～20 millimeters thick, wherein institute's applied pressure is all can between 10～100MP; Put into the electric furnace sintering then, its sintering temperature is under 1500 degrees centigrade, and sintering obtained the high-purity zinc oxide target in 24 hours, and the high-purity zinc oxide target is installed on the target position in the pulsed laser deposition equipment vacuum chamber; The MgB of step 1 preparation 2Pioneer's film is installed on the interior chip bench of pulsed laser deposition equipment vacuum chamber, with molecular pump vacuum chamber is extracted into 5 * 10 -4The vacuum that Pa is above, and remain on 5 * 10 -4Under the vacuum more than the Pa, simultaneously with the MgB on the chip bench 2It is 350 ℃ that pioneer's film is heated to temperature;
3. opening excimer pulse laser, is that 250 millis excimer pulsed laser burnt, that wavelength is 248nm focuses on the high-purity zinc oxide target of step 2 preparation the bombardment zinc oxide target with energy, deposit layer of ZnO film 2,50 millimeters of ranges, sedimentation time 20 minutes obtains ZnO/MgB 2Heterojunction material; Wherein the thickness of magnesium diboride film 1 is in 100 nanometers, and the thickness of the ZnO film 2 of growing on boronation magnesium film is in 100 nanometers;
4. get the above-mentioned ZnO/MgB that makes of a 5mm * 10mm 2Heterojunction material, thereon according to structure fabrication first electrode 3 and second electrode 4 of Fig. 1, and on first electrode 3 and second electrode 4, weld first contact conductor 5 and second contact conductor 6 respectively, the output of 7, two contact conductors of series connection one 500 Ohmic resistances connects amplifying circuit between first contact conductor 5 and second contact conductor 6 simultaneously; Can also terminally connect voltage tester equipment 10.
The detector circuit circuit as shown in Figure 1 of preparation is under the irradiation of the infrared laser of 1064nm, and its output photogenic voltage signal has reached 15 millivolts, as shown in Figure 2.
The heterojunction wavelength of being done is that the pulsed infrared laser of 1064 nanometers is done detection light, laser energy is that 1 milli is burnt, square centimeter of the area of light beam, the part that impinges upon the zinc oxide of heterojunction obtains the direct voltage output of about 15mV with oscilloscope measurement at the two ends of film.
Embodiment 2
Preparation high-quality ZnO/MgB 2The technology of heterojunction material is with embodiment 1, get a block size and be 3mm * 5mm, thickness is the MgB that has of 100nm 2The ZnO/MgB of film 1 and ZnO film layer 2 2Heterojunction material is made as shown in Figure 3 electrode and circuit thereon, 50 ohm in parallel resistance 7, the electric capacity 8 of 100 μ F is made pulsed infrared laser and is made detector, under the irradiation of the infrared laser of 1064nm, its output light photogenic voltage signal has reached 18 millivolts, as shown in Figure 2.
The heterojunction wavelength of being done is that the pulsed infrared laser of 1064nm is done detection light, laser energy is that 1 milli is burnt, square centimeter of the area of light beam, the part that impinges upon the zinc oxide of heterojunction obtains the direct voltage output of about 18mV with oscilloscope measurement at the two ends of film.
Embodiment 3.
Preparation high-quality ZnO/MgB 2Heterojunction is made as shown in Figure 1 circuit under the irradiation of the pulsed infrared laser of 10 μ, and its output light photogenic voltage signal has reached 25 millivolts.
1. at first, needing to use the pulse laser method, is to prepare MgB on the quartz plate with two-step method in substrate 9 2Surface smoothness be 50 nanometers, thickness is the high-quality MgB of 2 μ 2Film 1;
2. at MgB 2The thick zinc oxide 2 of deposition 2 μ obtains ZnO/MgB on the film 1 2Heterojunction;
3. according to the detector of preparation embodiment 1 structure shown in Figure 1, with the above-mentioned ZnO/MgB that makes 2Heterojunction material is got 3mm * 6mm, and 500 ohm in parallel resistance 7 is according to Fig. 1 electrode and contact conductor structure fabrication;
4. the heterojunction wavelength of being done is that the pulsed infrared laser of 10 μ is done detection light, laser energy is that 1 milli is burnt, square centimeter of the area of light beam, the part that impinges upon the zinc oxide of heterojunction obtains the direct voltage output of about 25mV with oscilloscope measurement at the two ends of film.
Embodiment 4.
Preparation high-quality ZnO/MgB 2Heterojunction is made as shown in the figure circuit under the irradiation of the pulsed infrared laser of 5 μ, and its output light photogenic voltage signal has reached 20 millivolts.
1. at first, need to use the pulse laser method, with two-step method on the magnesium oxide-based end 9, prepare surface smoothness be 50 nanometers, thickness is the high-quality MgB of 2 μ 2Film;
2. at MgB 2The thick zinc oxide of deposition 2 μ obtains ZnO/MgB on the film 2Heterojunction;
3. according to the suitable detector circuit of preparation shown in Figure 3.With the above-mentioned ZnO/MgB that makes 2Heterojunction material is got 5mm * 10mm, 50 ohm in parallel resistance, and the electric capacity of 100F, according to the structure fabrication electrode of Fig. 1,
4. the heterojunction wavelength of being done is that the pulsed infrared laser of 5 μ is done detection light, laser energy is that 1 milli is burnt, square centimeter of the area of light beam, the part that impinges upon the zinc oxide of heterojunction obtains the direct voltage output of about 20mV with oscilloscope measurement at the two ends of film.
Embodiment 5.
Preparation high-quality ZnO/MgB 2Heterojunction is made the structure shown in embodiment 1, and circuit is under the irradiation of the ultraviolet pulse laser of 248nm, and its output light photogenic voltage signal has reached 15 millivolts, as shown in Figure 2.
1. at first, need to use the pulse laser method, with two-step method in lanthanum aluminate substrate 9, prepare surface smoothness be 25nm, thickness is the high-quality MgB of 2 μ 2Film 1.
2. at MgB 2The zinc oxide films rete 2 of deposition 2 μ obtains ZnO/MgB on the film 2Heterojunction.。
3. the detector circuit that shows preparation according to Fig. 1.With the above-mentioned ZnO/MgB that makes 2Heterojunction material is got 5mm * 10mm, 100 ohm in parallel resistance, and according to the structure fabrication electrode of Fig. 1,
4. the heterojunction wavelength of being done is that the ultraviolet pulse laser of 248nm is done detection light, laser energy is that 1 milli is burnt, square centimeter of the area of light beam, the part that impinges upon the zinc oxide of heterojunction obtains the direct voltage output of about 15mV with oscilloscope measurement at the two ends of film.

Claims (5)

1. one kind based on ZnO/MgB 2The detector that heterojunction material is made comprises: a substrate, growth one deck MgB in substrate 2Film is characterized in that, also comprises a ZnO film, and this ZnO film is grown in MgB 2On the film; MgB wherein 2Film thickness is in 10 nanometers～10 micron; ZnO film thickness is in 10 nanometers～10 micron; First electrode is arranged on MgB 2On the film, second electrode is arranged on the ZnO film, and first contact conductor and second contact conductor are connected on first electrode and second electrode, and the resistance of connecting between two contact conductors, and two electrode outputs connect amplifying circuits.
2. described based on ZnO/MgB by claim 1 2The detector that heterojunction material is made is characterized in that, also is included in an electric capacity in parallel between first contact conductor and second contact conductor.
3. described based on ZnO/MgB by claim 1 2The detector that heterojunction material is made is characterized in that, two terminal voltage tester equipment that connect of contact conductor.
4. described based on ZnO/MgB by claim 1 2The detector that heterojunction material is made is characterized in that described amplifying circuit is the voltage signal amplifying circuit.
5. described based on ZnO/MgB by claim 1 2The detector that heterojunction material is made is characterized in that described substrate is selected from magnesium oxide, white stone, quartz plate, lanthanum aluminate or strontium titanate material.
CNB2005101078273A 2005-09-30 2005-09-30 Light detector based on ZnO/MgB heterojunction Expired - Fee Related CN100438084C (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139361A (en) * 1994-11-08 1996-05-31 Toshiba Corp Compound semiconductor light emitting device
CN1400674A (en) * 2002-08-05 2003-03-05 浙江大学 Preparation method of zinc oxide UV photodetector prototype device
US20050116263A1 (en) * 2002-06-06 2005-06-02 Rutgers, The State University of New Jersey and Multifunctional biosensor based on zno nanostructures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139361A (en) * 1994-11-08 1996-05-31 Toshiba Corp Compound semiconductor light emitting device
US20050116263A1 (en) * 2002-06-06 2005-06-02 Rutgers, The State University of New Jersey and Multifunctional biosensor based on zno nanostructures
CN1400674A (en) * 2002-08-05 2003-03-05 浙江大学 Preparation method of zinc oxide UV photodetector prototype device

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