CN101261157B - Rapid response infrared detector and method for making same - Google Patents
Rapid response infrared detector and method for making same Download PDFInfo
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- CN101261157B CN101261157B CN2008101045004A CN200810104500A CN101261157B CN 101261157 B CN101261157 B CN 101261157B CN 2008101045004 A CN2008101045004 A CN 2008101045004A CN 200810104500 A CN200810104500 A CN 200810104500A CN 101261157 B CN101261157 B CN 101261157B
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- electrode
- infrared detector
- rapid response
- contact conductor
- film
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Abstract
The invention provides a fast response infrared detector and a preparation method thereof. The infrared detector comprises a light response layer, a first electrode, a second electrode, a first electrode lead and a second electrode lead, wherein, the light response layer is an Al2O3 mono-crystalline or Al2O3 film with the thickness of 1nm to 10mm; the first electrode and the second electrode are arranged on the light response layer with the thickness of 1nm to 10 mm; ends of the first electrode lead and the second electrode lead are respectively connected with the first electrode and the second electrode and the other ends thereof are connected with an amplification circuit or voltage testing equipment; furthermore, a resistor is fixedly connected between the two electrode leads in parallel. The infrared detector of the invention has simple structure and high response speed, and can obtain photovoltaic signals under the radiation of infrared, with the response speed of ns level.
Description
Technical field
The present invention relates to photo-detector, relate in particular to a kind of rapid response infrared detector that utilizes alundum (Al monocrystal material or film to make.
Background technology
For the detection of laser energy, power, pulsewidth and waveform, not only extremely important to Laser Devices and fundamental research, and also have purposes very widely at aspects such as military affairs, national defence, agricultural, resource exploitation, traffic.At present, various types of laser detectors such as thermoelectricity, photoelectricity, pyroelectricity have been developed in the prior art, wherein commonly used with pyroelectric detector spare again, though yet pyroelectric detector spare responding range is wide, but the response time is slow, mostly be Millisecond, so people are still exploring fast-response, highly sensitive new pattern laser detector always.
(Sapphire claims white stone again to sapphire single-crystal, and molecular formula is Al
2O
3) good thermal characteristics, fabulous electrical specification and dielectric property arranged, and have that anti-chemical burn into is high temperature resistant, heat conduction good, hardness is high, characteristics such as infrared, chemical stability is good thoroughly, thereby be widely used in high temperature resistant material of infrared window and III-V group-III nitride and multiple epitaxial film substrate material, and be used to satisfy the needs of growing indigo plant, purple, white light emitting diode (LED) and blue laser (LD) in a large number.As document 1:Soon-Jin So and Choon-Bae Park et al.Thin solid films, 516, (2008) 2031-2034, Improvement of brightness with Al
2O
3Passivation layers on the surface ofInGaN/GaN-based light-emitting diode chips; Document 2: Chinese patent, number of patent application: 200610089399, based on gallium nitrogen/sapphire transparent substrate LED structure and preparation method; Document 3: Chinese patent, number of patent application: 200610004252, White LED and manufacture method thereof.
This case inventor proposes a kind of infrared detector based on alundum (Al monocrystal material or film thoughts on the deficiency of existing laser detector and the advantage of alundum (Al material.
Summary of the invention
In order to overcome the slow defective of current detector speed of photoresponse, the invention provides a kind of infrared detector of the quick response based on alundum (Al monocrystal material or film.
The invention provides a kind of rapid response infrared detector, this infrared detector comprises photoresponsive layer, first electrode, second electrode, first contact conductor, second contact conductor, and wherein, described photoresponsive layer is Al
2O
3Monocrystalline or Al
2O
3Film, its thickness is at 1nm～10mm; Described first electrode and second electrode are arranged on the described photoresponsive layer, and its thickness is at 1nm～10 μ m; Described first contact conductor is connected described first electrode and second electrode respectively with an end of second contact conductor, and the other end is used to connect amplifying circuit or voltage tester equipment, and between two contact conductors a resistance in parallel.
The present invention also provides a kind of preparation method of rapid response infrared detector, this method is to utilize the equipment and the technology of preparation film, carry out according to the following steps: adopt pulse laser film-forming method, chemical vapour deposition technique, sputtering method, physical vaporous deposition or supersonic spraying, at Al
2O
3Monocrystalline or Al
2O
3Preparation thickness is first metal film electrode and second metal film electrode of 1nm～10 μ m on the film; One end of first contact conductor and second contact conductor is connected described first metal film electrode and second metal film electrode respectively, and resistance in parallel between first contact conductor and second contact conductor, the output terminal of described two contact conductors is connected amplifying circuit or voltage tester equipment, make rapid response infrared detector.
The invention provides a kind of photoelectric signal that after rayed, directly produces, without any need for the auxiliary power supply and the rapid response infrared detector of electronic circuit, it utilizes the sapphire single-crystal material, energy, power and waveform that can exploring laser light, under infrared band, can respond the laser pulse of nanosecond pulsewidth, the width that produces potential pulse can be less than 0.4ns, and the pulse full duration has only several ns.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present invention, constitutes the application's a part, does not constitute limitation of the invention.In the accompanying drawings:
Fig. 1 is the infrared detector structural representation of the embodiment of the invention;
Fig. 2 is the infrared detector structural representation of another embodiment of the present invention;
Fig. 3 is an embodiment of the invention photogenic voltage signal graph.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the invention is clearer,, the embodiment of the invention is described in further details below in conjunction with embodiment and accompanying drawing.At this, illustrative examples of the present invention and explanation thereof are used to explain the present invention, but not as a limitation of the invention.
Below in conjunction with drawings and Examples rapid response infrared detector of the present invention and preparation method thereof is elaborated.
Please refer to Fig. 1, rapid response infrared detector of the present invention comprises photoresponsive layer 1, first metal film electrode 2, second metal film electrode 3, first contact conductor 4, second contact conductor 5 and resistance 6, wherein:
Two metal film electrodes 2,3 are prepared on the described photoresponsive layer by pulse laser film-forming method, chemical vapour deposition technique, sputtering method, physical vaporous deposition or supersonic spraying, its thickness is at 1nm～10 μ m, can be strip electrode or interdigitated electrodes, the material of preparation metal film electrode 2,3 can be a metal, as silver, gold, platinum, indium, aluminium etc., also can be the metallicity compound, as Y-Ba-Cu-O, MgB
2Deng.
One end of two contact conductors 4,5 connects two metal film electrodes 2 and 3 respectively, and the other end is used to connect amplifying circuit or voltage tester equipment 7.
6 of resistance are parallel between aforementioned two contact conductors 4,5, and to accelerate response speed, its resistance is 0.1 Ω～1M Ω.
According to another embodiment of the invention, all right electric capacity 8 in parallel between two contact conductors 4,5 is to accelerate response speed, as shown in Figure 2.
According to other embodiments of the invention, can also add high-intensity magnetic field, as neodymium iron boron (NdFeB) or energization solenoid etc., to strengthen response intensity by photomagnetoelectric effect to this detector.
Photo-detector of the present invention is simple in structure, do detection light with pulsed infrared laser, laser energy is 1mJ, square centimeter of the area of light beam, avoid electrode and impinge upon on the film, two ends obtain the direct voltage output (radiation of visible light is no photoproduction volt signal down) of about 2.5mV with oscilloscope measurement.This photo-detector signal under infrared light illumination has reached more than the 2.5mV, and the response time has realized based on Al below 1ns
2O
3Monocrystalline or Al
2O
3The infrared ray excited ultrafast photogenic voltage signal of film.Please refer to Fig. 3, it is the present invention Al
2O
3The voltage signal that the infrared detector that monocrystalline is made is produced under the pulsed laser irradiation of 1064nm, its rise time is 0.4ns, halfwidth is 1ns.
The rapid response infrared detector that structure is made shown in preparation method according to the above embodiment of the present invention and Fig. 1,2 adopts general Al commonly used
2O
3Single-chip or Al
2O
3Growing metal material electrode on the film, after rayed, directly produce photoelectric signal, without any need for auxiliary power supply and electronic circuit, energy, power and waveform that can exploring laser light, under infrared band, can respond the laser pulse of nanosecond pulsewidth, the width that produces potential pulse can be less than 0.4ns, and the pulse full duration has only several ns.
Below in an embodiment in conjunction with Al of the present invention
2O
3Monocrystalline or Al
2O
3Method for manufacturing thin film, to of the present invention based on Al
2O
3Monocrystalline or Al
2O
3The infrared detector structure of film is elaborated.
Embodiment one:
Please refer to Fig. 1, preparation one is based on Al
2O
3Monocrystalline or Al
2O
3The preparation method of the infrared detector of film may further comprise the steps:
1. at first, adopt the pulse laser filming technology, at the Al of 5mm * 10mm * 0.5mm
2O
3Monocrystalline or Al
2O
3Adopt on the film that area is that 5mm * 1mm thickness is the 1nm silverskin on the evaporation of mask means branch both sides;
2. with the above-mentioned sample of making, according to structure fabrication shown in Figure 1, first electrode 2 and second electrode 3 are distinguished evaporations on 1, first contact conductor 4 and second contact conductor 5 are welded on respectively on first electrode 2 and second electrode 3, and the resistance 6 of 1M Ω in parallel between first contact conductor 4 and second contact conductor 5, the output terminal of two contact conductors can connect voltage measuring apparatus 7, and present embodiment adopts amplifying circuit or oscillograph.
The detector probe of preparation indicates its output photogenic voltage signal to reach 2.5mV with oscillograph, as shown in Figure 3 under the irradiation of the infrared laser of 1064nm.
Embodiment two:
Please refer to Fig. 1, preparation one is based on Al
2O
3Monocrystalline or Al
2O
3The preparation method of the infrared detector of film may further comprise the steps:
1. at first, adopt the magnetron sputtering filming technology, at the Al of 5mm * 10mm * 0.5mm
2O
3Adopt on the monocrystalline that area is that 5mm * 1mm thickness is 10 μ m aluminium films on the evaporation of mask means branch both sides;
2. with the above-mentioned sample of making, according to structure fabrication shown in Figure 1, first contact conductor 4 and second contact conductor 5 are welded on respectively on first electrode 2 and second electrode 3, and the resistance 6 of 1M Ω in parallel between first contact conductor 4 and second contact conductor 5, the output terminal of two contact conductors can connect voltage measuring apparatus 7, and present embodiment adopts amplifying circuit or oscillograph.
The detector probe of preparation is indicated the photogenic voltage signal of its output with oscillograph under the irradiation of the infrared laser of 808nm.
Embodiment three:
Please refer to Fig. 1, preparation one is based on Al
2O
3Monocrystalline or Al
2O
3The preparation method of the infrared detector of film may further comprise the steps:
With Al
2O
3Monocrystalline or Al
2O
3Film is made detector as shown in Figure 1, output photogenic voltage signal under the irradiation of the infrared laser of 980nm.
1. at first, adopting conventional spot welder, is the Al of 1nm at 5mm * 10mm thickness
2O
3The area of burn-oning on the film is the indium electrode of 1 μ m for 1mm2 thickness;
2. with the above-mentioned sample of making, according to structure fabrication shown in Figure 1, first contact conductor 4 and second contact conductor 5 are welded on respectively on first electrode 2 and second electrode 3, and the resistance 6 of 0.1 Ω in parallel between first contact conductor 4 and second contact conductor 5, the output terminal of two contact conductors can connect voltage measuring apparatus 7, and present embodiment adopts amplifying circuit or oscillograph.
Embodiment four:
With Al
2O
3Monocrystalline or Al
2O
3Film is made detector as shown in Figure 2, an electric capacity 8 in parallel between first contact conductor 4 and second contact conductor 5.
Embodiment five:
Press the structure fabrication of embodiment one, difference is to add high-intensity magnetic field, as neodymium iron boron (NdFeB) or energization solenoid etc.
It should be noted last that: above embodiment is the unrestricted technical scheme of the present invention in order to explanation only, although the present invention is had been described in detail with reference to the foregoing description, those of ordinary skill in the art is to be understood that: detector circuit of the present invention or method for making are made amendment or be equal to replacement, and not breaking away from any modification or partial replacement of the spirit and scope of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (9)
1. rapid response infrared detector, this infrared detector comprises photoresponsive layer, first electrode, second electrode, first contact conductor, second contact conductor, it is characterized in that:
Described photoresponsive layer is Al
2O
3Monocrystalline or Al
2O
3Film, its thickness is at 1nm～10mm;
Described first electrode and second electrode are arranged on the described photoresponsive layer, and its thickness is at 1nm～10 μ m;
Described first contact conductor is connected described first electrode and second electrode respectively with an end of second contact conductor, and the other end is used to connect amplifying circuit or voltage tester equipment, and between two contact conductors a resistance in parallel, to accelerate response speed.
2. rapid response infrared detector according to claim 1 is characterized in that, the resistance of described resistance is 0.1 Ω～1M Ω.
3. rapid response infrared detector according to claim 1 is characterized in that, also is parallel with an electric capacity between described two contact conductors, to accelerate response speed.
4. rapid response infrared detector according to claim 1 is characterized in that described electrode is a metal film electrode, and the material for preparing this electrode comprises metal or metallicity compound.
5. rapid response infrared detector according to claim 4 is characterized in that described metal comprises silver, gold, platinum, indium or aluminium; Described metallicity compound comprises Y-Ba-Cu-O or MgB
2
6. rapid response infrared detector according to claim 1 is characterized in that, described electrode is strip electrode or interdigitated electrodes.
7. rapid response infrared detector according to claim 1 is characterized in that, this infrared detector also comprises and adds high-intensity magnetic field, to strengthen response intensity by photomagnetoelectric effect.
8. rapid response infrared detector according to claim 7 is characterized in that, the described high-intensity magnetic field that adds is neodymium iron boron or energization solenoid.
9. the preparation method of a rapid response infrared detector is characterized in that, this method is to utilize the equipment and the technology of preparation film, carries out according to the following steps:
Adopt pulse laser film-forming method, chemical vapour deposition technique, sputtering method, physical vaporous deposition or supersonic spraying, at Al
2O
3Monocrystalline or Al
2O
3Preparation thickness is first metal film electrode and second metal film electrode of 1nm～10 μ m on the film;
One end of first contact conductor and second contact conductor is connected described first metal film electrode and second metal film electrode respectively, and resistance in parallel between first contact conductor and second contact conductor, the output terminal of described two contact conductors is connected amplifying circuit or voltage tester equipment, make rapid response infrared detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101045004A CN101261157B (en) | 2008-04-21 | 2008-04-21 | Rapid response infrared detector and method for making same |
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|---|---|---|---|
| CN2008101045004A CN101261157B (en) | 2008-04-21 | 2008-04-21 | Rapid response infrared detector and method for making same |
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| Publication Number | Publication Date |
|---|---|
| CN101261157A CN101261157A (en) | 2008-09-10 |
| CN101261157B true CN101261157B (en) | 2010-07-21 |
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| CN2008101045004A Expired - Fee Related CN101261157B (en) | 2008-04-21 | 2008-04-21 | Rapid response infrared detector and method for making same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441180A (en) * | 2013-08-21 | 2013-12-11 | 中国石油大学(北京) | Nanometer wire ultraviolet light detector and preparing method and application thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102574704A (en) * | 2009-10-16 | 2012-07-11 | 皇家飞利浦电子股份有限公司 | Photo-responsive layer and layer assembly |
| CN104143586A (en) * | 2014-07-10 | 2014-11-12 | 北京理工大学 | Method for manufacturing photoelectric detector based on integrated chip with alloy semiconductor nano-structure |
| CN110809704B (en) * | 2017-05-08 | 2022-11-01 | 威力登激光雷达美国有限公司 | LIDAR data acquisition and control |
-
2008
- 2008-04-21 CN CN2008101045004A patent/CN101261157B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441180A (en) * | 2013-08-21 | 2013-12-11 | 中国石油大学(北京) | Nanometer wire ultraviolet light detector and preparing method and application thereof |
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| CN101261157A (en) | 2008-09-10 |
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