CN112180227A - Non-contact type silicon carbide power device junction temperature online detection system and detection method - Google Patents
Non-contact type silicon carbide power device junction temperature online detection system and detection method Download PDFInfo
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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Abstract
The invention discloses a non-contact type silicon carbide power device junction temperature online detection system and a detection method. The temperature control unit controls the silicon carbide power device to work according to a set working temperature, and the driving unit controls the silicon carbide power device to work, so that current flows through a parasitic body diode of the silicon carbide power device to generate an electroluminescence phenomenon; detecting and obtaining the working temperature, the conduction current and the luminous intensity of the silicon carbide power device, and establishing a function model; and detecting and calculating the condition to be detected according to the function model to obtain the working junction temperature of the silicon carbide power device. The method deduces the junction temperature by detecting the luminous intensity of the impurity or defect energy level of the silicon carbide power device, realizes non-contact measurement, has the characteristic of inherent electrical isolation, is particularly suitable for online junction temperature detection of the silicon carbide power device working in high-temperature, high-pressure and large-current application occasions, and has higher precision and real-time property.
Description
Technical Field
The invention belongs to a silicon carbide power device detection system and a silicon carbide power device detection method in the technical field of power electronic device detection, and particularly relates to a non-contact type silicon carbide power device junction temperature on-line detection system and a non-contact type silicon carbide power device junction temperature on-line detection method.
Background
The third generation semiconductor materials represented by silicon carbide have the characteristics of high forbidden band width, high thermal conductivity, high breakdown field strength and the like, and become preferred materials of high-voltage, high-temperature and high-frequency power devices. However, the excellent silicon carbide material characteristics bring about a thinner chip thickness and a smaller area, and also bring about more severe thermal reliability problems such as a stronger thermal aggregation effect, a higher current density, and a shorter short-circuit withstand time. Therefore, the detection of the chip temperature (junction temperature) of the silicon carbide power device is of great significance for guaranteeing the reliable operation of the silicon carbide power device.
The traditional junction temperature extraction methods can be mainly classified into four types: (1) measuring the infrared radiation on the surface of the device by using equipment such as an infrared imager and the like to obtain the overall temperature distribution condition of the surface of the device; (2) the thermal resistance network method is characterized in that the temperature distribution condition inside the module can be reversely predicted in real time by establishing a thermal impedance network model of the device and combining power loss and utilizing mathematical calculation; (3) mounting a thermistor, such as a thermistor having a negative temperature coefficient, in the package at a position close to the power chip, thereby enabling indirect measurement of the chip temperature; (4) the thermosensitive inductance parameter method reversely deduces the junction temperature level of the chip by measuring the electrical parameter with strong temperature sensitivity according to the mapping relation between the internal physical parameter of the chip and the temperature.
The high-speed thermal imager is expensive and the extraction speed of temperature data is very low, so that the high-speed thermal imager is only suitable for measuring the steady-state temperature, needs special treatment on the surface of a device and is not suitable for extracting the junction temperature of a silicon carbide power device in the operation process. With the long-time operation of the silicon carbide power device, the aging of the device package can cause the parameters of the thermal impedance network model to be significantly different from the actual parameters, thereby seriously influencing the accuracy of the thermal impedance network method for predicting the junction temperature of the silicon carbide power device. The indirect measurement method for installing the thermosensitive element can only test the temperature near a device substrate or a chip, cannot accurately reflect the actual junction temperature condition of the silicon carbide power device in the operation process, has long response time of temperature test, and is not suitable for the online junction temperature detection of the high-frequency silicon carbide power device with the switching speed of mu s level. The thermosensitive inductance parameter method is considered as the most effective method for detecting transient temperature change of the power device, and can detect junction temperature change of a switching power device with a level of mu s, however, most of the existing thermosensitive inductance parameter methods are only suitable for detecting junction temperature of a silicon-based power device, for a silicon carbide power device working under high breakdown electric field, large transient current and strong magnetic field change, a rear-stage sampling/conditioning circuit matched with the traditional thermosensitive inductance parameter method is difficult to directly meet the voltage level requirement, and required isolation and anti-interference measures are also difficult to design.
Therefore, the junction temperature extraction of the silicon carbide power device under the high-temperature and high-pressure application occasions is difficult to directly apply to the latest progress of the junction temperature detection technology of the power electronic device. In view of the above, the invention is based on the research on the thermal sensitive optical parameters of the silicon carbide power device, and realizes a non-contact junction temperature detection method of the silicon carbide power device with inherent electrical isolation by detecting the luminous intensity of the silicon carbide power device.
Power grade silicon carbide can emit visible light due to the Electro Luminescence Effect (Electro Luminescence Effect). Electroluminescence, also known as electroluminescence, is a solid state light emission phenomenon that converts electrical energy into light energy. According to the relevant radiative recombination theory, the light emitting mechanism in the power-grade silicon carbide SiC-4H mainly comprises direct interband recombination and impurity/defect deep energy level recombination, wherein the recombination process of an unbalanced carrier caused by the direct transition of electrons between a conduction band and a valence band is the direct interband recombination, and the recombination process of the unbalanced carrier through a deep energy level recombination center formed by impurities/defects in a semiconductor is the impurity/defect deep energy level recombination.
Taking a silicon carbide power MOSFET as an example, when the silicon carbide power MOSFET is in forward conduction, the silicon carbide power MOSFET is a unipolar device, and the phenomenon of composite luminescence of electrons and holes does not exist; electroluminescence occurs only when current flows from its parasitic body diode due to the recombination of electron holes. Research on the light-emitting spectrum of the parasitic body diode of the silicon carbide power MOSFET shows that the light-emitting waveband corresponding to the impurity/defect deep-level composite light-emitting mechanism of the silicon carbide power MOSFET occupies the main component of the electroluminescence spectrum of the silicon carbide power MOSFET, the light intensity and the temperature of the light-emitting waveband form a negative temperature coefficient relationship, and the linearity of the light-emitting waveband is good. A data table and a function model of the light intensity and the temperature of the silicon carbide power MOSFET impurity/defect deep energy level composite light-emitting waveband are established through a calibration and correction loop, and the working junction temperature of the power silicon carbide can be reversely deduced by detecting the light intensity of the power silicon carbide power MOSFET impurity/defect deep energy level composite light-emitting waveband through a photoelectric detection circuit.
Disclosure of Invention
In view of the above, the invention provides a non-contact type silicon carbide power device junction temperature online detection system and a detection method, through detecting the luminous intensity of impurity/defect energy level in the working process of a silicon carbide power device to be detected, the luminous intensity is not only related to conduction current, but also contains the temperature information of the silicon carbide power device, and a relation is established among the conduction current, the working junction temperature and the luminous intensity, so that the non-contact type silicon carbide power device junction temperature online detection with electrical isolation is realized, the detection precision is high, and the delay time is short.
The technical scheme of the invention comprises the following steps:
a non-contact type silicon carbide power device junction temperature online detection system comprises:
silicon carbide power devices (MOSFET) S1 and S2, wherein the silicon carbide power devices S1 and S2 are connected in series, and the silicon carbide power devices emit wide-spectrum-domain mixed light by virtue of an electroluminescence effect;
a main circuit unit connected to silicon carbide power devices (MOSFETs) S1 and S2;
the photoelectric detection unit mainly comprises a light sieve piece, a light guide piece and a photoelectric conversion circuit; the light screening part adopts a band-pass filter to filter light emitted by one of the silicon carbide power devices, so that light in a second main wave crest wave band is transmitted, and light in a first main wave crest wave band and light in other wave bands except the second main wave crest wave band are reflected and absorbed; the light guide part adopts low-loss quartz optical fiber, and then the light filtered by the light sieve part is guided into the photoelectric conversion circuit through the light guide part;
a driving unit connected to the silicon carbide power devices S1 and S2, for providing a switching control signal to the silicon carbide power devices to control on and off states of the silicon carbide power devices;
the current sampling unit is connected to the silicon carbide power device, specifically to a line on which an inductor L of the main circuit unit is located, and is used for detecting the conduction current of the silicon carbide power device;
the temperature control unit is connected to one of the silicon carbide power devices, and is used for adjusting the temperature of the silicon carbide power device in a calibration and correction link and inputting the temperature into the junction temperature detection unit to establish a model;
the junction temperature detection unit is respectively connected with the photoelectric detection unit, the temperature control unit, the driving unit and the current sampling unit and is used for receiving the working temperature of the silicon carbide power device collected by the temperature control unit, receiving the conduction current generated when the silicon carbide power device collected by the current sampling unit generates an electroluminescent effect and receiving an output voltage signal V obtained by the collection and the processing of the photoelectric detection unit when the silicon carbide power device emits lighto(ii) a The junction temperature detection unit is internally provided with working temperatures of the silicon carbide power devices, conduction currents of the silicon carbide power devices and output voltage signals V of the photoelectric detection circuit under various working conditionsoConstructing a function model; under the condition of waiting for measurement, the direction of the on-off control signal and the conducting current in the silicon carbide power device is used as a trigger signal for detecting the electroluminescence intensity of the silicon carbide power device, and a voltage signal V obtained by detecting the luminescence intensity of the silicon carbide power device in real time according to the photoelectric detection unitoAnd detecting the obtained conduction current of the silicon carbide power device by the current sampling unit, and calculating the working junction temperature of the silicon carbide power device through a function model.
The main circuit unit comprises a direct-current voltage source V, a capacitor C and an inductor L; the positive electrode of the direct-current voltage source V is connected with one end of the capacitor C and the drain electrode of the silicon carbide power device S1, the negative electrode of the direct-current voltage source V is connected with the other end of the capacitor C and the source electrode of the silicon carbide power device S2, one end of the inductor L is connected with the source electrode of the silicon carbide power device S1 and the drain electrode of the silicon carbide power device S2, and the other end of the inductor L is connected with the source electrode of the silicon carbide power device S2.
In the optical screening treatment, a wave band corresponding to direct interband composite luminescence of a silicon carbide power device is taken as a first main wave peak wave band, and a wave band corresponding to impurity or defect deep level composite luminescence of the silicon carbide power device is taken as a second main wave peak wave band; the central wavelength of the light sieve is selected as the peak wavelength of the second main wave peak, and the bandwidth is selected as the half-peak bandwidth of the second main wave peak, so that light in the second main wave peak wave band can penetrate through the light sieve, and the interference of direct interband composite luminescence of the silicon carbide power device and ambient light can be eliminated.
The photoelectric conversion circuit comprises four resistors R1-R4, two capacitors C1-C2, a low-input bias current amplifier U1-U2 and a photosensitive diode D1; the anode of the photodiode D1 is connected with the inverting input end of the low-input bias current amplifier U1, and the cathode of the photodiode D1 is grounded; a capacitor C1 is connected in parallel with a resistor R1 and then connected between the inverting input terminal of the low-input bias current amplifier U1 and the output terminal of the low-input bias current amplifier U1, the non-inverting input terminal of the low-input bias current amplifier U1 is grounded, the output terminal of the low-input bias current amplifier U1 is connected with the non-inverting input terminal of the low-input bias current amplifier U2 through a resistor R2, the non-inverting input terminal of the low-input bias current amplifier U2 is grounded through a capacitor C2, the inverting input terminal of the low-input bias current amplifier U2 is grounded through a resistor R3, and two ends of the resistor R4 are respectively connected between the inverting input terminal and the output terminal of the low-input; the light intensity of light emitted by the silicon carbide power device after being filtered by the light screening element is detected by the photosensitive diode D1, the light intensity is converted into the magnitude of photo-generated current of the photosensitive diode, and after the photo-generated current is processed by two stages of low-input bias current amplifiers U1-U2, a voltage signal V is obtained from the output of the low-input bias current amplifier U2oThe signal at the output end of the low input bias current amplifier U2 is a voltage signal Vo。
The photoelectric conversion circuit adopts a high-precision photosensitive diode D1 to convert the electroluminescent intensity of the silicon carbide power device influenced by temperature into light of the photosensitive diodeMagnitude of generated current IpAnd the photo-generated current is amplified and conditioned by an amplifying circuit to be converted into a voltage signal VoAnd the photoelectric conversion is realized.
The junction temperature detection unit is internally provided with an FPGA/DSP/single chip microcomputer, and the calculation of junction temperature detection is realized through the FPGA/DSP/single chip microcomputer.
The expression form of the function model is as follows:
Vo＝-(p1I+p2)T+p3I+p4
wherein, VoThe voltage signal is output by the photoelectric detection unit, T is the working temperature of the silicon carbide power device, I is the conduction current of the silicon carbide power device, and p1、p2、p3、p4The first, second, third and fourth fitting parameters are obtained.
Secondly, a non-contact type junction temperature online detection method for a silicon carbide power device comprises the following steps:
(1) and a calibration correction link:
(1.1) setting an operation condition under the condition that the maximum working voltage, the maximum working current and the maximum working temperature of the silicon carbide power device are not exceeded;
(1.2) controlling a silicon carbide power device (MOSFET) to work according to a set working temperature through a temperature control unit, controlling the silicon carbide power device S2 to be in an off state through a driving unit, controlling the silicon carbide power device S1 to be switched from the on state to the off state through the driving unit, enabling current to flow through a parasitic diode of the silicon carbide power device S2, and detecting an output voltage signal V of electroluminescent light intensity of the silicon carbide power device S2 through a photoelectric detection unit at the momento；
(1.3) controlling the ON-duration of the silicon carbide power device (MOSFET) S1 by the driving unit to make a linear change, as shown in I of FIG. 4LThe curve is changed, so that the conduction current value of a parasitic body diode of a silicon carbide power device (MOSFET) S2 is changed; and the working temperature is changed by the temperature control unit; temperature of silicon carbide power device module under different operating conditions of different working temperatures and different on-time lengths by continuously repeating stepsDegree, on-current of silicon carbide power device and output voltage signal V of photoelectric detection unitoDetecting and collecting, and then establishing a function model;
(2) and (3) an online detection link:
when the silicon carbide power device is reversely conducted with current and the driving signal is turned off under negative pressure, the collecting photoelectric detection unit detects a voltage signal V output by the electroluminescence light intensity of the silicon carbide power deviceoCollecting the reverse conducting current of the silicon carbide power device; according to the reverse conduction current of the silicon carbide power device and the output signal V of the photoelectric detection unitoAnd inputting the current into the function model to calculate the working junction temperature of the silicon carbide power device.
The working junction temperature of the silicon carbide power device is calculated by inputting the working junction temperature into the function model, and the working junction temperature is as follows:
wherein, VoVoltage signal, T, output for the photo-detecting unitjThe operating junction temperature of the silicon carbide power device, I is the conduction current of the silicon carbide power device, p1、p2、p3、p4The first, second, third and fourth fitting parameters are obtained.
The junction temperature detection method of the silicon carbide power device based on the thermal sensitive optical parameters is a non-contact type junction temperature on-line detection method with inherent electrical isolation, and is particularly suitable for on-line detection of the junction temperature of the silicon carbide power device under the application occasions of high temperature, high pressure and large current.
Based on the technical scheme, the invention has the following beneficial technical effects:
(1) the method for realizing real-time junction temperature monitoring by detecting the luminous intensity of the silicon carbide power device has the characteristic of inherent electrical isolation, effectively weakens the influence of strong electromagnetic interference environment, and is particularly suitable for junction temperature detection of the silicon carbide power device working in high-voltage and high-current application occasions.
(2) The invention is based on the impurity/defect energy level luminescence detection of the silicon carbide power device, the luminescence intensity and the temperature of the silicon carbide power device form a negative temperature coefficient relationship, and the silicon carbide power device has good linearity, so that the high-precision detection of the junction temperature of the silicon carbide power device can be realized.
In summary, the junction temperature is deduced by detecting the luminous intensity of the impurity energy level of the silicon carbide power device, non-contact measurement is realized, the method has the characteristic of inherent electrical isolation, is particularly suitable for online junction temperature detection of the silicon carbide power device working in high-temperature, high-pressure and high-current application occasions, and has higher precision and real-time performance.
Drawings
Fig. 1 is a schematic diagram of the structure and the electro-optic spectrum of a silicon carbide power MOSFET.
Fig. 2 is a schematic diagram of a non-contact online junction temperature detection system for a silicon carbide power device in the invention.
FIG. 3 is a schematic diagram of a photoelectric detection circuit according to the present invention.
FIG. 4 is a timing diagram of test signals according to the present invention; wherein, Vgs1Is the drive signal, V, on tube S1 on a silicon carbide power MOSFETgs2Is the driving signal of the lower tube S2 of the silicon carbide power MOSFET, ILIs the current on the inductor L, Is2Is the reverse conduction current of the lower tube S2 of the silicon carbide power MOSFET.
FIG. 5 shows the output voltage V of the photoelectric detection circuit under the conduction currents of different silicon carbide power devices in the inventionoAnd fitting a curve with the temperature of the silicon carbide power device.
Detailed Description
In order to more specifically describe the present invention, the following detailed description is provided for the technical solution of the present invention with reference to the accompanying drawings and the specific embodiments.
Fig. 1 shows a schematic diagram of a silicon carbide power MOSFET. The silicon carbide MOSFET is provided with a pin body diode which works in a bipolar conduction mode, holes in a p region and electrons in an N + region are injected into a low-doped region of the silicon carbide power MOSFET in the process of passing current through the body diode, excess carriers which are injected and compounded are balanced in a stable working state, and the energy of the recombination can be emitted in the form of photons. The emitted photons show two luminescence peaks in 390nm and 510nm wave bands in the spectrum due to two radiation recombination mechanisms, wherein the 390nm luminescence peak is generated by direct interband recombination, and the 510nm luminescence peak is generated by impurity/defect deep level recombination. The invention utilizes the relation between the impurity/deep energy level composite luminous intensity and the temperature of the silicon carbide power device, thereby indirectly deducing the junction temperature of the silicon carbide power device by detecting the impurity/deep energy level composite luminous intensity.
Fig. 2 is a schematic diagram of a system for testing the operating junction temperature of a silicon carbide power MOSFET having an inductive load in a two-level half-bridge topology.
The whole test system mainly comprises two silicon carbide power MOSFETs, an inductor L, a direct-current energy storage capacitor C, a direct-current power supply V, a driving unit, a photoelectric detection unit, a current sampling unit and a junction temperature detection unit.
A main circuit unit connected to silicon carbide power devices (MOSFETs) S1 and S2; the main circuit unit comprises a direct-current voltage source V, a capacitor C and an inductor L; the positive electrode of the direct-current voltage source V is connected with one end of the capacitor C and the drain electrode of the silicon carbide power device S1, the negative electrode of the direct-current voltage source V is connected with the other end of the capacitor C and the source electrode of the silicon carbide power device S2, one end of the inductor L is connected with the source electrode of the silicon carbide power device S1 and the drain electrode of the silicon carbide power device S2, and the other end of the inductor L is connected with the source electrode of the silicon carbide power device S2.
The photoelectric detection unit mainly comprises a light sieve piece, a light guide piece and a photoelectric conversion circuit; the light screening part adopts a band-pass filter to filter light emitted by one of the silicon carbide power devices, so that light in a second main wave crest wave band is transmitted, and light in a first main wave crest wave band and light in other wave bands except the second main wave crest wave band are reflected and absorbed; the light guide is a low-loss quartz optical fiber, and then the light filtered by the light sieve is guided into the photoelectric conversion circuit through the light guide.
A driving unit connected to the silicon carbide power devices S1 and S2, for providing a switching control signal to the silicon carbide power devices to control on and off states of the silicon carbide power devices; specifically to the gate and source of upper tube S1 of the silicon carbide power MOSFET and to the gate and source of lower tube S2 of the silicon carbide power MOSFET.
And the current sampling unit is connected to the silicon carbide power device, specifically to a line on which an inductor L of the main circuit unit is connected, and is connected to detect the conduction current of the silicon carbide power device.
The temperature control unit is connected to one of the silicon carbide power devices, and is used for adjusting the temperature of the silicon carbide power device in a calibration and correction link and inputting the temperature into the junction temperature detection unit to establish a model; the temperature control unit can adopt a temperature control heating plate or a constant temperature control device (comprising a temperature sensor, a heating plate and a temperature controller), and transmits the temperature of the silicon carbide power MOSFET to the junction temperature detection unit.
In the photoelectric detection unit, a band-pass filter with the central wavelength of 510nm, the half-band width of 60nm and the central wavelength transmittance of 90% is adopted by the optical sieve, so that impurity/deep-level composite light is transmitted, and the interference of direct interband composite luminescence of a silicon carbide power device and ambient light is eliminated; the light guide part adopts a low-loss multimode silica fiber with the spectral range of 200-1400nm, the core diameter of 1000 mu m and the numerical aperture of 0.22NA to guide light, and the band-pass filter is arranged at one end of the silica fiber through a fiber collimator.
The photoelectric detection circuit comprises four resistors R1-R4, two capacitors C1-C2, and a low input bias current amplifier LTC6081 (see FIG. 3)<100pA) U1-U2, a photosensitive diode D1; the photosensitive diode D1 adopts high-precision silicon photosensitive diode SFH250V, detects light wave with specific wavelength of the silicon carbide power device after being filtered by the light screen and the light guide, and converts the light intensity of the light wave into photo-generated current I of the photosensitive diodepThe size of (d);
the anode of the photodiode D1 is connected with the inverting input end of the low-input bias current amplifier U1, and the cathode of the photodiode D1 is grounded; the photodiode D1 is operated in zero bias operation state, and its photo-generated current IpThe magnitude is linear with the light intensity. The capacitor C1 is connected in parallel with the resistor R1 and then connected with the low input bias current amplifier U1The non-inverting input of the low input bias current amplifier U1 is connected to ground between the inverting input and the output of the low input bias current amplifier U1. At the moment, an amplifying circuit consisting of the photosensitive diode D1, the amplifier U1, the resistor R1 and the capacitor C1 works in a mutual resistance amplifying mode to generate the photo-generated current IpConverted and amplified into a voltage signal V1The amplification factor is the resistance of the resistor R1, and phase compensation is performed through the capacitor C1, so that the circuit stability is improved.
The output end of the low-input bias current amplifier U1 is connected with the non-inverting input end of the low-input bias current amplifier U2 through a resistor R2, the non-inverting input end of the low-input bias current amplifier U2 is grounded through a capacitor C2, and at the moment, an RC filter network formed by a resistor R2 and a capacitor C2 further conducts voltage signal V1Filtering and compensating to obtain a voltage signal V2. The inverting input end of the low-input bias current amplifier U2 is grounded through a resistor R3, and two ends of the resistor R4 are respectively connected between the inverting input end and the output end of the low-input bias current amplifier U2; the light intensity of light emitted by the silicon carbide power device after being filtered by the light screening element is detected by the photosensitive diode D1, the light intensity is converted into the magnitude of photo-generated current of the photosensitive diode, and after the photo-generated current is processed by two stages of low-input bias current amplifiers U1-U2, a voltage signal V is obtained from the output of the low-input bias current amplifier U2oThe signal at the output end of the low input bias current amplifier U2 is a voltage signal Vo. At this time, the resistor R3, the resistor R4, and the amplifier U2 constitute a positive phase proportional amplifier, the amplification factor is determined by the resistor R3 and the resistor R4, and the voltage signal V2 is further amplified to a final photovoltaic voltage signal Vo。
The control timing for the drive unit to provide the silicon carbide power MOSFET is shown in fig. 4.
Temperature of silicon carbide power MOSFET module, reverse conduction current of silicon carbide power MOSFET, and output voltage signal V of photoelectric detection unitoThe test procedure for establishing the data table and the function model is as follows:
(1) controlling a driving signal of the driving unit to enable the silicon carbide power MOSFET to be in a turn-off state; adjusting the temperature of a substrate of the silicon carbide power MOSFET module by the temperature control unit to enable the silicon carbide power MOSFET to be stabilized at a set temperature, and setting 50 ℃ as an initial set temperature;
(2) at toTo t1At time t, transistor S1 on the SiC power MOSFET0The DC power supply V charges a freewheeling reactor L through a silicon carbide power MOSFET upper tube S1 when the DC power supply V is switched on at the moment, and t is set0To t1Controlling the time period to regulate the current flowing through the tube S1 on the silicon carbide power MOSFET to a set current and controlling the time period at t1At that time, transistor S1 on the sic power MOSFET is turned off, setting 5A to the initial set current.
(3) At t1From this point in time, the current in the freewheeling reactor L freewheels through the parasitic body diode of the silicon carbide power MOSFET lower tube S2, and the detection of the silicon carbide power MOSFET lower tube S2 at t by the photodetector unit is made1The magnitude of the electroluminescent light intensity at any moment obtains a voltage signal VoSo as to record the output voltage signal V of the photoelectric detection unit under the initial set temperature and the initial set currento；
(4) By controlling t0To t1The magnitude of the set current is adjusted, the set current is taken as a starting point, the set current is gradually increased to the highest set current at certain intervals, the highest set current does not exceed the maximum allowable working current of the silicon carbide power MOSFET, and the steps (1) to (3) are repeated, so that a data table of the voltage signal Vo output by the photoelectric detection unit under the condition that the set temperature of the silicon carbide power MOSFET is unchanged and the reverse conducting current of the silicon carbide power MOSFET is changed can be obtained;
(5) the temperature of the silicon carbide power MOSFET is controlled through the temperature control unit, the initial set temperature is used as a starting point, the temperature is gradually increased to the highest set temperature at a certain interval, the highest set temperature does not exceed the highest allowable working temperature of the silicon carbide power MOSFET, the steps from (1) to (4) are repeated, the temperatures of different silicon carbide power MOSFETs are established and perfected, and the different silicon carbide power MOSFETs are reversely electrified to flow down and are connected with a database of the voltage signal Vo output by the photoelectric detection unit.
Through the test process, the temperature and the silicon carbide work of the silicon carbide power MOSFET module under each operation condition can be establishedReverse conduction current of MOSFET and output voltage signal V of photoelectric detection unitoThe three-dimensional database and the function fitting model; in the actual operation of the silicon carbide power MOSFET, the driving signal, the reverse conducting current of the silicon carbide power MOSFET and the voltage signal Vo of the photoelectric detection unit are monitored, and the working junction temperature of the silicon carbide power MOSFET at the moment can be calculated by utilizing a database stored in the junction temperature detection unit through a lookup table and a function model.
FIG. 5 shows the photo-detection voltage signal V at reverse conduction currents of silicon carbide power MOSFETs of 5A, 7A, 9A, 11A, 13A and 15A, respectivelyoAnd fitting a curve with the temperature of the silicon carbide power device. It can be seen that the photoelectric detection voltage signal V under a certain conduction currentoThe temperature of the silicon carbide power device module is in a negative temperature coefficient relationship, and the linearity is high.
Data fitting is carried out on the three-dimensional database, and a function model of the working junction temperature of the silicon carbide power device, the conduction current of the silicon carbide power device and the output voltage signal Vo of the photoelectric detection circuit under various working conditions can be established, and the expression form is as follows:
Vo＝-(p1I+p2)T+p3I+p4
wherein, VoIs the output voltage signal of the photoelectric detection unit, T is the temperature of the silicon carbide power device, I is the conduction current of the silicon carbide power device, p1、p2、p3、p4For the parameters obtained by curve fitting the data tables obtained under the respective operating conditions, p1 is 6.6e-5, p2 is 1.31e-3, p3 is 1.7e-2, and p4 is 0.323.
The method for calculating the junction temperature according to the function model is expressed as follows:
wherein, VoIs the output voltage signal of the photoelectric detection unit, I is the conduction current of the silicon carbide power device, p1、p2、p3、p4For calibrating the parameters, T, of the function model established in the calibration stagejThe junction temperature of the silicon carbide power device is calculated according to the function model.
The invention is implemented to carry out a plurality of tests, and the precision is more than 95 percent, so that the result with high precision can be seen.
The embodiments described above are presented to enable a person having ordinary skill in the art to make and use the invention. It will be readily apparent to those skilled in the art that various modifications to the above-described embodiments may be made, and the generic principles defined herein may be applied to other embodiments without the use of inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make improvements and modifications to the present invention based on the disclosure of the present invention within the protection scope of the present invention.
Claims (8)
1. A non-contact type silicon carbide power device junction temperature online detection system is characterized by comprising:
the silicon carbide power devices S1 and S2 are connected in series, and the silicon carbide power devices S1 and S2 are connected in series;
a main circuit unit connected to the silicon carbide power devices S1 and S2;
the photoelectric detection unit mainly comprises a light sieve piece, a light guide piece and a photoelectric conversion circuit; filtering light emitted by one of the silicon carbide power devices to enable light in a second main peak wave band to penetrate through the silicon carbide power device, and reflecting and absorbing light in other wave bands except the second main peak wave band; then the light filtered by the light sieve is guided into the photoelectric conversion circuit by the light guide;
a driving unit connected to the silicon carbide power devices S1 and S2 for providing switching control signals;
the current sampling unit is connected to the silicon carbide power device loop and used for detecting the conduction current of the silicon carbide power device;
the temperature control unit is connected to one of the silicon carbide power devices and is used for adjusting the temperature of the silicon carbide power device;
junction temperatureThe detection unit is respectively connected with the photoelectric detection unit, the temperature control unit, the driving unit and the current sampling unit and is used for receiving the working temperature of the silicon carbide power device collected by the temperature control unit, receiving the conduction current of the silicon carbide power device collected by the current sampling unit and receiving an output voltage signal V obtained by the collection and the processing of the photoelectric detection unit when the silicon carbide power device emits lighto(ii) a The switch control signal and the direction of the conducting current in the silicon carbide power device are used as trigger signals for detecting the electroluminescence intensity of the silicon carbide power device, and a voltage signal V is obtained according to the light intensity of the silicon carbide power device detected by the photoelectric detection unitoAnd detecting the obtained conduction current of the silicon carbide power device by the current sampling unit, and calculating the working junction temperature of the silicon carbide power device in real time through a function model.
2. The system for on-line detection of junction temperature of non-contact silicon carbide power device as claimed in claim 1, wherein: the main circuit unit comprises a direct-current voltage source V, a capacitor C and an inductor L; the positive electrode of the direct-current voltage source V is connected with one end of the capacitor C and the drain electrode of the silicon carbide power device S1, the negative electrode of the direct-current voltage source V is connected with the other end of the capacitor C and the source electrode of the silicon carbide power device S2, one end of the inductor L is connected with the source electrode of the silicon carbide power device S1 and the drain electrode of the silicon carbide power device S2, and the other end of the inductor L is connected with the source electrode of the silicon carbide power device S2.
3. The system for on-line detection of junction temperature of non-contact silicon carbide power device as claimed in claim 1, wherein: in the optical screening treatment, a wave band corresponding to impurity or defect deep level composite luminescence of the silicon carbide power device is taken as a second main wave peak wave band; the central wavelength of the light sieve is selected as the peak wavelength of the second main wave peak, and the bandwidth is selected as the half-peak bandwidth of the second main wave peak, so that the light of the second main wave peak wave band can penetrate through the light sieve.
4. The system for on-line detection of junction temperature of non-contact silicon carbide power device as claimed in claim 1, wherein the system comprises a temperature sensor, aIn the following steps: the photoelectric conversion circuit comprises four resistors R1-R4, two capacitors C1-C2, a low-input bias current amplifier U1-U2 and a photosensitive diode D1; the anode of the photodiode D1 is connected with the inverting input end of the low-input bias current amplifier U1, and the cathode of the photodiode D1 is grounded; a capacitor C1 is connected in parallel with a resistor R1 and then connected between the inverting input terminal of the low-input bias current amplifier U1 and the output terminal of the low-input bias current amplifier U1, the non-inverting input terminal of the low-input bias current amplifier U1 is grounded, the output terminal of the low-input bias current amplifier U1 is connected with the non-inverting input terminal of the low-input bias current amplifier U2 through a resistor R2, the non-inverting input terminal of the low-input bias current amplifier U2 is grounded through a capacitor C2, the inverting input terminal of the low-input bias current amplifier U2 is grounded through a resistor R3, and two ends of the resistor R4 are respectively connected between the inverting input terminal and the output terminal of the low-input; the output end signal of the low input bias current amplifier U2 is a voltage signal Vo。
5. The system for on-line detection of junction temperature of non-contact silicon carbide power device as claimed in claim 1, wherein: the junction temperature detection unit is internally provided with an FPGA/DSP/single chip microcomputer, and the calculation of junction temperature detection is realized through the FPGA/DSP/single chip microcomputer.
6. The system for on-line detection of junction temperature of non-contact silicon carbide power device as claimed in claim 1, wherein: the expression form of the function model is as follows:
Vo＝-(p1I+p2)T+p3I+p4
wherein, VoThe voltage signal is output by the photoelectric detection unit, T is the working temperature of the silicon carbide power device, I is the conduction current of the silicon carbide power device, and p1、p2、p3、p4The first, second, third and fourth fitting parameters are obtained.
7. A non-contact type junction temperature online detection method of a silicon carbide power device, which is applied to the online detection system of any one of claims 1 to 6, is characterized by comprising the following steps:
(1) and a calibration correction link:
(1.1) setting an operation condition under the condition that the maximum working voltage, the maximum working current and the maximum working temperature of the silicon carbide power device are not exceeded;
(1.2) controlling the silicon carbide power device to work according to the set working temperature through the temperature control unit, controlling the silicon carbide power device S2 to be in an off state through the driving unit, controlling the silicon carbide power device S1 to be switched from the on state to the off state through the driving unit, enabling current to flow through a parasitic diode of the silicon carbide power device S2, and detecting and obtaining a voltage signal V output by the silicon carbide power device S2 through the photoelectric detection unit at the momento；
(1.3) controlling the on-time of the silicon carbide power device S1 to be linearly changed through the driving unit, so as to change the on-current value of the parasitic body diode of the silicon carbide power device S2; and the working temperature is changed by the temperature control unit; continuously repeating the steps to carry out the operation working conditions under different working temperatures and different turn-on durations, the temperature of the silicon carbide power device module, the on-current of the silicon carbide power device and the output voltage signal V of the photoelectric detection unitoDetecting and collecting, and then establishing a function model;
(2) and (3) an online detection link: when the silicon carbide power device is reversely conducted with current and the driving signal is turned off under negative pressure, the collecting photoelectric detection unit detects a voltage signal V output by the silicon carbide power deviceoCollecting the reverse conducting current of the silicon carbide power device; according to the reverse conduction current of the silicon carbide power device and the output signal V of the photoelectric detection unitoAnd inputting the current into the function model to calculate the working junction temperature of the silicon carbide power device.
8. The method for on-line detection of junction temperature of non-contact silicon carbide power device as claimed in claim 7, wherein: the working junction temperature of the silicon carbide power device is calculated by inputting the working junction temperature into the function model, and the working junction temperature is as follows:
wherein, VoVoltage signal, T, output for the photo-detecting unitjThe operating junction temperature of the silicon carbide power device, I is the conduction current of the silicon carbide power device, p1、p2、p3、p4The first, second, third and fourth fitting parameters are obtained.
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