CN108172663B - Packaging method and packaging structure of ZnMgO solar blind ultraviolet detector - Google Patents
Packaging method and packaging structure of ZnMgO solar blind ultraviolet detector Download PDFInfo
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- CN108172663B CN108172663B CN201711443990.6A CN201711443990A CN108172663B CN 108172663 B CN108172663 B CN 108172663B CN 201711443990 A CN201711443990 A CN 201711443990A CN 108172663 B CN108172663 B CN 108172663B
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- ultraviolet detector
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- blind ultraviolet
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- 229910003363 ZnMgO Inorganic materials 0.000 title claims abstract description 154
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
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- 230000001070 adhesive effect Effects 0.000 claims description 48
- 229910052738 indium Inorganic materials 0.000 claims description 30
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 30
- 239000002245 particle Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 238000005538 encapsulation Methods 0.000 claims description 13
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- 238000004519 manufacturing process Methods 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
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- 239000011248 coating agent Substances 0.000 claims description 5
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- 229910002704 AlGaN Inorganic materials 0.000 description 2
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The application provides a ZnMgO solar blind ultraviolet detector packaging method and a ZnMgO solar blind ultraviolet detector packaging structure, wherein a ZnMgO solar blind ultraviolet detector chip is fixed on a base, interdigital electrodes are led out by metal wires to serve as pins of the ZnMgO solar blind ultraviolet detector packaging structure, then the ZnMgO solar blind ultraviolet detector chip is packaged by ultraviolet-permeable packaging glue, and epoxy resin is adopted to package exposed metal wires and connecting parts, so that the complete ZnMgO solar blind ultraviolet detector packaging structure is formed, the ZnMgO solar blind ultraviolet detector is convenient to use in an area outside a laboratory, the use range of the ZnMgO solar blind ultraviolet detector chip is expanded, and the ZnMgO solar blind ultraviolet detector chip is more practical. When the device is exposed to the atmosphere for use, the performance parameters are stable. Meanwhile, the pins led out enable the device to be plugged and used, and the defect that the unpackaged chip can only be tested in a laboratory is overcome.
Description
Technical Field
The invention belongs to the technical field of manufacturing of semiconductor photoelectric detectors, and particularly relates to a packaging method and a packaging structure of a ZnMgO solar blind ultraviolet detector.
Background
The ultraviolet detection technology can be used for military communication, missile tail flame detection, fire early warning, environmental monitoring, biological effect and the like, and can be widely applied to military affairs and civil use. Ultraviolet rays of solar radiation having wavelengths below 280nm are almost absent from the earth's surface due to the strong absorption of the atmosphere, and this ultraviolet band is figuratively referred to as the solar blind band. The solar blind ultraviolet detector working in the wave band is not interfered by solar radiation, has higher sensitivity and has outstanding advantages in the aspect of weak signal detection.
Currently, commercially available ultraviolet detectors mainly include silicon detectors, photomultiplier tubes, and semiconductor detectors. The silicon-based ultraviolet phototube needs an additional optical filter, the photomultiplier needs to work under high voltage, and the photomultiplier has the advantages of heavy volume, low efficiency, easy damage and higher cost, and has certain limitation on practical application. Compared with silicon detectors and photomultiplier tubes, semiconductor materials are attracting much attention because of their advantages of portability, low cost, high responsivity, etc.
The most studied semiconductor materials at present mainly comprise AlGaN alloy of III-V group and ZnMgO alloy of II-VI group. At present, the energy band of GaN can be widened to a solar blind area by doping aluminum, and the GaN can be made into detectors with structures such as MSM, p-n and the like. However, the growth temperature of AlGaN is high, and the alloy crystal quality of the high aluminum component is poor. ZnMgO has the advantages of wide band gap adjusting range (from 3.37eV to 7.8eV), strong radiation resistance, high electron saturation drift velocity, matched single crystal substrates (ZnO and MgO), easy synthesis, no toxicity, no harm, rich resources, environmental friendliness and the like, and is one of candidate materials for preparing the wide-bandgap ultraviolet detector.
In the prior art, a plurality of high-performance ultraviolet detectors are prepared, but at present, ultraviolet detector substrates are chips, and can only be used for parameter testing in laboratories, and are not packaged, so that the ultraviolet detectors cannot be widely applied. Therefore, the packaging technology is a barrier for restricting the ZnMgO solar blind ultraviolet detector to be practical.
Disclosure of Invention
In view of this, the invention provides a method and a structure for packaging a ZnMgO solar blind ultraviolet detector, so as to solve the problem that the chip of the ZnMgO solar blind ultraviolet detector in the prior art cannot be put into practical use.
In order to achieve the purpose, the invention provides the following technical scheme:
a packaging method of a ZnMgO solar blind ultraviolet detector comprises the following steps:
providing a base, a ZnMgO solar blind ultraviolet detector chip, two metal wires, epoxy resin and packaging adhesive, wherein the base comprises a first surface and a second surface which are oppositely arranged, and a side surface for connecting the first surface and the second surface; the ZnMgO solar blind ultraviolet detector chip comprises a substrate, a ZnMgO layer, an interdigital electrode structure and two indium particles; the packaging adhesive is transparent to ultraviolet rays;
fixing the ZnMgO solar blind ultraviolet detector chip on the first surface of the base;
manufacturing a through hole penetrating through the side face and the first surface on the base;
enabling the two metal wires to penetrate through the through holes, wherein the first ends of the metal wires protrude out of the first surface, and the second ends of the metal wires protrude out of the side surface;
connecting the end parts of the first ends of the two metal wires to one indium particle respectively, wherein the second ends of the metal wires are used as pins of the ZnMgO solar blind ultraviolet detector, and the non-end part of the first ends of the metal wires is arranged above the ZnMgO solar blind ultraviolet detector chip and the base in an overhead mode;
dotting the epoxy at a non-end of the first ends of the wires, the epoxy covering the wires on a side of the first surface facing away from the second surface and the through-holes on the first surface;
and covering the interdigital electrode of the interdigital electrode structure of the ZnMgO solar blind ultraviolet detector chip with the packaging adhesive.
Preferably, the manufacturing of the through hole penetrating through the side surface and the first surface on the base specifically includes:
drilling two first holes on a first surface on the base by using a drill bit, wherein the axis of each first hole is perpendicular to the first surface;
drilling two second holes on the side surface of the base by using a drill bit, wherein the axis of each second hole is perpendicular to the side surface;
and the two second holes are communicated with the two first holes in a one-to-one correspondence manner to form two through holes.
Preferably, the passing the two metal wires through the through hole specifically includes:
passing one of said wires through a through hole communicating said first hole with said second hole;
and the other metal wire penetrates through the through hole which is communicated with the second hole through the other first hole.
Preferably, the connecting the ends of the first ends of the two metal wires to one of the indium particles respectively includes:
pressing the end part of the first end of each metal wire onto one indium particle, wherein the non-end part of the first end of each metal wire is arranged above the ZnMgO solar blind ultraviolet detector chip and the base in an overhead mode;
using conductive adhesive to point the contact position of the metal wire and the indium particles;
and placing the base, the ZnMgO solar blind ultraviolet detector chip, the two metal wires and the conductive adhesive in an oven, and baking for 2-48 hours at the temperature of 50-200 ℃, including the endpoint values.
Preferably, the step of covering the interdigital electrode of the interdigital electrode structure of the ZnMgO solar blind ultraviolet detector chip with the encapsulation adhesive specifically includes:
coating the packaging adhesive on an interdigital area of the ZnMgO solar blind ultraviolet detector chip;
placing in an oven, and baking at 50-200 deg.C for 2-48 hr, inclusive.
Preferably, the fixing of the ZnMgO solar blind ultraviolet detector chip on the first surface of the base specifically includes:
and adhering the ZnMgO solar blind ultraviolet detector chip to the first surface of the base by adopting an adhesive.
Preferably, in the providing the substrate and the ZnMgO solar blind ultraviolet detector chip, the providing the ZnMgO solar blind ultraviolet detector chip specifically includes:
providing a substrate;
epitaxially growing a layer of ZnMgO on one surface of the substrate;
evaporating metal electrodes;
photoetching the metal electrode to form two interdigital electrode structures, wherein each interdigital electrode structure comprises a plurality of interdigital electrodes which are arranged in parallel and a connecting part which is vertical to the interdigital electrodes and is connected with the interdigital electrodes;
and respectively manufacturing and forming indium grains on the connecting parts of the two interdigital electrode structures.
The invention also provides a ZnMgO solar blind ultraviolet detector packaging structure which is formed by applying the packaging method, and the ZnMgO solar blind ultraviolet detector packaging structure comprises the following components:
the base comprises a first surface, a second surface and a side surface, wherein the first surface and the second surface are oppositely arranged, the side surface is connected with the first surface and the second surface, and the base further comprises a through hole penetrating through the side surface and the first surface;
the ZnMgO solar blind ultraviolet detector chip is fixed on the first surface of the base and comprises a substrate, a ZnMgO layer, an interdigital electrode structure and two indium particles;
each metal wire penetrates through the through hole, the end part of each metal wire is electrically connected with one indium particle, and the non-end part of each metal wire is arranged above the ZnMgO solar blind ultraviolet detector chip and the base in an overhead mode;
an epoxy covering the wires on the side of the first surface facing away from the second surface and the through-holes on the first surface;
and the packaging adhesive is permeable to ultraviolet rays and covers the ZnMgO solar blind ultraviolet detector chip, the metal wire positioned on one side of the first surface, which is far away from the second surface, and the through hole on the first surface.
Preferably, the metal wire is one of an aluminum wire, a gold wire, a silver wire, a stainless steel wire, a copper wire, a nickel wire and an iron wire.
Preferably, the packaging adhesive is organic silica gel.
According to the technical scheme, the ZnMgO solar blind ultraviolet detector chip is fixed on the base, the interdigital electrodes are led out by the metal wires to serve as pins of the ZnMgO solar blind ultraviolet detector packaging structure, the ZnMgO solar blind ultraviolet detector chip is packaged by the packaging glue capable of penetrating ultraviolet rays, and the exposed metal wires and the connecting parts are packaged by epoxy resin, so that the complete ZnMgO solar blind ultraviolet detector packaging structure is formed and is convenient to use in an area outside a laboratory, the use range of the ZnMgO solar blind ultraviolet detector chip is expanded, and the ZnMgO solar blind ultraviolet detector chip is more practical.
The packaging method provided by the invention has the advantages of simple process, easily controlled reaction process, convenience and rapidness in preparing the packaged ZnMgO solar blind ultraviolet detector, and stable performance parameters when the detector is exposed in the atmosphere for use. Meanwhile, the pins led out enable the device to be plugged and used, the defect that the unpackaged chip can only be tested in a laboratory is overcome, and a foundation is laid for the device to be practical.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a flow chart of a ZnMgO solar blind ultraviolet detector packaging method provided by an embodiment of the invention;
FIG. 2-FIG. 4 are schematic diagrams of a preparation process of a ZnMgO solar blind ultraviolet detector chip according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an interdigital electrode of a ZnMgO solar blind ultraviolet detector chip provided by an embodiment of the invention;
FIG. 6 is a schematic view of a hole drilled in an organic glass plate during a packaging process according to an embodiment of the present invention;
FIG. 7 is a cross-sectional view of a hole drilled in a plexiglass plate during encapsulation provided by an embodiment of the present invention;
FIG. 8 is a schematic diagram of an aluminum wire lead in a packaging process according to an embodiment of the present invention;
FIG. 9 is a corresponding cross-sectional view of FIG. 8;
FIG. 10 is a schematic view of a silver paste coating process in a packaging process according to an embodiment of the present invention;
FIG. 11 is a corresponding cross-sectional view of FIG. 10;
FIG. 12 is a schematic view of an epoxy coating process in a packaging process according to an embodiment of the present invention;
FIG. 13 is a corresponding cross-sectional view of FIG. 12;
FIG. 14 is a schematic diagram illustrating the application of an encapsulant during an encapsulation process according to an embodiment of the present invention;
FIG. 15 is a corresponding cross-sectional view of FIG. 14;
FIG. 16 is a current-voltage (I-V) curve of a packaged ZnMgO solar blind ultraviolet detector provided by an embodiment of the present invention;
FIG. 17 is a graph of the optical responsivity of the encapsulated ZnMgO solar blind ultraviolet detector provided by the embodiment of the present invention;
fig. 18 is a response time curve of the packaged ZnMgO solar blind ultraviolet detector provided in the embodiment of the present invention.
Detailed Description
Just as the background art part shows, the ZnMgO solar blind ultraviolet detector in the prior art is mainly applied in a laboratory, is basically only in a chip stage, has no packaging structure and cannot be widely used.
In the prior art, some electronic device packaging methods have been used, most of which use gold wire ball bonding technology to bond the electrodes on the chip and the pins on the housing by using gold wire bonding. And then covering a quartz plate on the metal shell.
The inventors have found that this method, although widely used, has certain problems. First, the method has certain requirements for welding instruments and welding techniques. Second, there is a requirement for the robustness and thickness of the gold electrodes on the chip, and if the gold electrodes are not robust enough or too thin, the gold electrodes may be peeled off during gold wire ball bonding. Thirdly, the use of metal casing and quartz plate is expensive and not conducive to cost control. Fourth, after the device is subjected to a severe shock impact, the gold wire may break or debond, causing the device to fail.
Based on the above, the invention provides a method for packaging a ZnMgO solar blind ultraviolet detector, which comprises the following steps:
providing a base, a ZnMgO solar blind ultraviolet detector chip, two metal wires, epoxy resin and packaging adhesive, wherein the base comprises a first surface and a second surface which are oppositely arranged, and a side surface for connecting the first surface and the second surface; the ZnMgO solar blind ultraviolet detector chip comprises a substrate, a ZnMgO layer, an interdigital electrode structure and two indium particles; the packaging adhesive is transparent to ultraviolet rays;
fixing the ZnMgO solar blind ultraviolet detector chip on the first surface of the base;
manufacturing a through hole penetrating through the side face and the first surface on the base;
enabling the two metal wires to penetrate through the through holes, wherein the first ends of the metal wires protrude out of the first surface, and the second ends of the metal wires protrude out of the side surface;
connecting the end parts of the first ends of the two metal wires to one indium particle respectively, wherein the second ends of the metal wires are used as pins of the ZnMgO solar blind ultraviolet detector, and the non-end part of the first ends of the metal wires is arranged above the ZnMgO solar blind ultraviolet detector chip and the base in an overhead mode;
dotting the epoxy at a non-end of the first ends of the wires, the epoxy covering the wires on a side of the first surface facing away from the second surface and the through-holes on the first surface;
and covering the interdigital electrode of the interdigital electrode structure of the ZnMgO solar blind ultraviolet detector chip with the packaging adhesive.
The ZnMgO solar blind ultraviolet detector packaging method provided by the invention has the advantages that the ZnMgO solar blind ultraviolet detector chip is fixed on the base, the interdigital electrodes are led out by the metal wires to be used as pins of the ZnMgO solar blind ultraviolet detector packaging structure, the ZnMgO solar blind ultraviolet detector chip is packaged by the packaging glue capable of penetrating ultraviolet rays, and the exposed metal wires and the connecting parts are packaged by epoxy resin, so that the complete ZnMgO solar blind ultraviolet detector packaging structure is formed, the ZnMgO solar blind ultraviolet detector can be conveniently used in an area outside a laboratory, the use range of the ZnMgO solar blind ultraviolet detector chip is expanded, and the ZnMgO solar blind ultraviolet detector chip is more practical.
In addition, the invention has cheap material and simple method, simultaneously directly uses the aluminum wire lead without gold wire lead bonding, and overcomes the problems of the prior art adopting the gold wire ball bonding technical method.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a method for packaging a ZnMgO solar blind ultraviolet detector provided in an embodiment of the present invention includes:
s101: providing a base, a ZnMgO solar blind ultraviolet detector chip, two metal wires, epoxy resin and packaging adhesive, wherein the base comprises a first surface and a second surface which are oppositely arranged, and a side surface for connecting the first surface and the second surface; the ZnMgO solar blind ultraviolet detector chip comprises a substrate, a ZnMgO layer, an interdigital electrode structure and two indium particles; the packaging adhesive is transparent to ultraviolet rays;
in this embodiment, the method for manufacturing the ZnMgO solar blind ultraviolet detector chip is not limited, and optionally, as shown in fig. 2 to fig. 4, the method includes: providing a substrate 1; epitaxially growing a layer of ZnMgO 2 on one surface of the substrate 1; evaporating metal electrodes; photoetching a metal electrode to form two interdigital electrode structures 3, wherein the interdigital electrode structures 3 comprise a plurality of interdigital electrodes 31 which are arranged in parallel and connecting parts 32 which are vertical to the interdigital electrodes and are connected with the interdigital electrodes; and indium grains 4 are respectively formed on the connecting parts of the two interdigital electrode structures.
It should be noted that, in this embodiment, a specific material of the substrate is not limited, and optionally, the substrate is a sapphire substrate. In this embodiment, the specific process steps of the ZnMgO solar-blind ultraviolet detector chip are not limited, and optionally, when a ZnMgO layer grows on the surface of the substrate 1, a molecular beam epitaxy apparatus is used to grow a ZnMgO film material. The metal electrode is evaporated, and the gold electrode with the thickness of 5nm-300nm is evaporated mainly by a thermal evaporation process, and the thickness of 50nm is preferred. In other embodiments of the present invention, the process for growing the ZnMgO layer may also be magnetron sputtering or Metal Organic Chemical Vapor Deposition (MOCVD), which is not limited in this embodiment.
Obtaining the interdigital electrode by photoetching the gold electrode, wherein the specific size of the ZnMgO solar blind ultraviolet detector chip and the specific size of the interdigital electrode are not limited in this embodiment, and optionally, as shown in fig. 5, for the size and specific parameters of the interdigital electrode, the inter-digital distance D of the interdigital electrode may be 2 μm to 10 μm, the logarithm G of the interdigital is 10 pairs to 25 pairs, the length L of the interdigital is 0.5mm to 2mm, the width W of the interdigital is 2 μm to 10 μm, more specifically, the inter-digital distance D of the interdigital electrode may be 5 μm, the logarithm G of the interdigital is 10 pairs, the length L of the interdigital is 0.5mm, and the width W of the interdigital is 5 μm. And finally, pressing indium particles 4 on the connecting part of the interdigital electrode to obtain the ZnMgO solar blind ultraviolet detector chip with the MSM (metal-semiconductor-metal) structure.
The concrete material of not injecing the base in this embodiment, as long as can play encapsulation and insulating effect can, optional, the base is insulating panels such as organic glass board, plank or rubber slab, preferably in this embodiment the base is the organic glass board. In order to match the size of the ZnMgO solar blind ultraviolet detector chip, the specific size of the pedestal provided in this embodiment is as shown in fig. 6, and the length L1 of the pedestal 5 may be 5mm to 50 mm; the width W1 can be 5mm-50mm and the thickness H1 can be 1mm-10mm, in this embodiment, the length, width and thickness of the base 5 are 20mm, 20mm and 3mm respectively.
S102: fixing the ZnMgO solar blind ultraviolet detector chip on the first surface of the base;
in this embodiment, the fixing the ZnMgO solar blind ultraviolet detector chip on the first surface of the base specifically includes: and adhering the ZnMgO solar blind ultraviolet detector chip to the first surface of the base by adopting an adhesive.
It should be noted that the embodiment does not limit the specific form of the adhesive, as long as the ZnMgO solar blind ultraviolet detector chip can be fixed on the surface of the base. Optionally, the adhesive may be epoxy resin, AB adhesive, or the like, and in some embodiments of the present invention, an adhesive tape may be further used to fix the ZnMgO solar blind ultraviolet detector chip on the surface of the base.
S103: manufacturing a through hole penetrating through the side face and the first surface on the base;
with reference to fig. 6, the step of forming a through hole on the base, the through hole penetrating through the side surface and the first surface, includes: drilling two first holes 51 on a first surface of the base by using a drill, wherein the axis of each first hole 51 is perpendicular to the first surface; drilling two second holes 52 on the side surface of the base by using a drill, wherein the axis of each second hole 52 is perpendicular to the side surface; and the two second holes 52 are in one-to-one correspondence with the two first holes 51 to form two through holes. Specifically, two holes are punched in the side of the plexiglas plate 5 using a drill bit with a diameter D2 of 0.1mm-5 mm. Then, two holes with the diameter D1 of 0.1mm-5mm are punched on the first surface, and the two holes on the first surface are connected with the bottoms of the two holes punched on the side surface to form a through hole, as shown in FIG. 7, which is a schematic cross-sectional view of the through hole. It should be noted that the punching order of the first hole on the first surface and the second hole on the side surface may be reversed, which is not limited in this embodiment.
S104: enabling the two metal wires to penetrate through the through holes, wherein the first ends of the metal wires protrude out of the first surface, and the second ends of the metal wires protrude out of the side surface;
in this embodiment, the perforation manner of passing the two metal wires through the through holes is not limited, and the metal wires may pass through the first holes on the first surface of the organic glass plate 5 and then pass through the second holes on the upper side of the organic glass plate 5, in this embodiment, the metal wires may optionally pass through the second holes on the side surface and then pass through the first holes on the first surface, that is, the metal wires pass through the holes on the side surface and then pass through the holes on the first surface, as shown in fig. 8 and 9, one metal wire 61 passes through one through hole through which the first hole communicates with the second hole; another one of the wires 62 is passed through a through hole communicating with the second hole through another one of the first holes.
It should be noted that the diameter of the metal wire is smaller than that of the through hole, and the diameter of the metal wire is optionally 0.1mm to 4 mm; in this embodiment, the material of the metal wire is not limited as long as the metal wire can perform a conductive function, and optionally, the metal wire may be an aluminum wire, or may be a conductive metal wire such as a gold wire, a silver wire, a stainless steel wire, a copper wire, a nickel wire, or an iron wire.
It should be noted that, in this embodiment, the order of step S102, step S103 and step S104 may be exchanged, that is, the step of punching a hole on the base and threading a wire may be placed before the step of fixing the ZnMgO solar blind ultraviolet detector, which is not limited in this embodiment.
S105: connecting the end parts of the first ends of the two metal wires to one indium particle respectively, wherein the second ends of the metal wires are used as pins of the ZnMgO solar blind ultraviolet detector, and the non-end part of the first ends of the metal wires is arranged above the ZnMgO solar blind ultraviolet detector chip and the base in an overhead mode;
the connecting the end portions of the first ends of the two metal wires to one indium particle respectively specifically comprises: pressing the end part of the first end of each metal wire onto one indium particle, wherein the non-end part of the first end of each metal wire is arranged above the ZnMgO solar blind ultraviolet detector chip and the base in an overhead mode; as shown in the direction of the dotted arrow in fig. 8, alternatively, in this embodiment, a pincer may be used to bend the metal wire, and then press the indium particles on the chip, it should be noted that in this embodiment, the first end of the metal wire is not entirely pressed on the chip, but is bent into an arc, and only the tip of the metal wire presses the indium particles on the chip, and the specific structure may be shown in fig. 10 and fig. 11; using conductive adhesive to point the contact position of the metal wire and the indium particles; and placing the base, the ZnMgO solar blind ultraviolet detector chip, the two metal wires and the conductive adhesive in an oven, and baking for 2-48 hours at the temperature of 50-200 ℃, including the endpoint values.
It should be noted that, in this embodiment, a specific material of the conductive adhesive is not limited, and the conductive adhesive is a silver adhesive. Referring to fig. 10 and 11, the silver paste coating area is shown, and the silver paste coating 7 is performed only at the contact position of the indium particles and the metal wire.
S106: dotting the epoxy at a non-end of the first ends of the wires, the epoxy covering the wires on a side of the first surface facing away from the second surface and the through-holes on the first surface;
because the ZnMgO solar blind ultraviolet detector is used for detecting solar blind ultraviolet band light waves, if epoxy resin is covered in a large area, the solar blind ultraviolet absorption is strong, and the use of the detector is influenced, therefore, in the embodiment, the epoxy resin is only covered in the exposed area of the metal wire, as shown in fig. 12 and 3, 9 points of the epoxy resin are used at the connecting part of the metal wire and the insulating base, and 9 points of the epoxy resin are used at the bending part of the metal wire, so that the epoxy resin naturally slides to the connecting part of the metal wire and the chip, and the adding amount of the epoxy resin is strictly controlled, the epoxy resin is prevented from flowing to the interdigital area of the chip, and the chip is baked in an oven at 50-200 ℃ for 2-48 hours.
S107: and covering the interdigital electrode of the interdigital electrode structure of the ZnMgO solar blind ultraviolet detector chip with the packaging adhesive.
In this embodiment, the encapsulation with the encapsulation glue specifically includes: coating the packaging adhesive on an interdigital area of the ZnMgO solar blind ultraviolet detector chip; placing in an oven, and baking at 50-200 deg.C for 2-48 hr, inclusive.
Since the epoxy resin already covers a part of the metal, the packaging adhesive in this embodiment only needs to encapsulate the chip area, and for convenience of processing, optionally, the packaging adhesive may cover more areas, such as an area a shown by a dotted line in fig. 14, as long as the insulating cover electrical connection portion can be formed. Referring to fig. 15, an encapsulation adhesive 8 covers the interdigital region of the ZnMgO solar blind ultraviolet detector chip to protect the interdigital region of the ZnMgO solar blind ultraviolet detector chip, so as to form an insulating layer.
The packaging adhesive is a packaging adhesive capable of transmitting ultraviolet rays so as to avoid excessive absorption of the ultraviolet rays and influence on the performance of the ZnMgO solar blind ultraviolet detector. In this embodiment, the encapsulation adhesive is an organic silicon adhesive, and in other embodiments of the present invention, other encapsulation adhesives with higher ultraviolet transmittance may also be used. In the embodiment of the invention, organic silica gel which can penetrate through ultraviolet light is used for packaging, so that the chip is sealed and the metal wire is fixed, and finally the packaged ZnMgO solar blind ultraviolet detector is obtained.
The packaging method provided by the invention has the advantages of simple process, easy control of reaction process, convenience and rapidness in preparation of the packaged ZnMgO solar blind ultraviolet detector, and stable performance parameters when the detector is exposed in the atmosphere for use. Meanwhile, the pins led out enable the device to be plugged and used, the defect that the unpackaged chip can only be tested in a laboratory is overcome, and a foundation is laid for the device to be practical.
The embodiment of the invention also provides a ZnMgO solar blind ultraviolet detector packaging structure, which is manufactured by adopting the ZnMgO solar blind ultraviolet detector packaging method and can be seen in figures 14 and 15, and the packaging structure comprises:
a base 5, wherein the base 5 comprises a first surface and a second surface which are oppositely arranged, and a side surface connecting the first surface and the second surface, and the base 5 further comprises through holes (51, 52) penetrating through the side surface and the first surface;
the ZnMgO solar blind ultraviolet detector chip 10 is fixed on the first surface of the base 5 and comprises a substrate, a ZnMgO solar blind layer, an interdigital electrode structure and two indium grains 4;
the two metal wires (61, 62), each metal wire (61, 62) passes through the through hole (51, 52), the end part is electrically connected with one indium particle 4, and the non-end part is arranged above the ZnMgO solar blind ultraviolet detector chip 10 and the base 5 in an overhead mode;
an epoxy 9, said epoxy 9 covering the wires 61 on the side of said first surface facing away from said second surface and the through-openings on said first surface, i.e. the through-openings of the first through-holes 51;
and the packaging adhesive 8 is permeable to ultraviolet rays, and the packaging adhesive 8 covers the interdigital area of the ZnMgO solar blind ultraviolet detector chip.
In this embodiment, the material of the metal wire and the material of the encapsulation adhesive are not limited, and optionally, the metal wire is one of a gold wire, a silver wire, a stainless steel wire, a copper wire, a nickel wire, and an iron wire. The packaging adhesive is organic silica gel.
The inventor uses a light response test system with an ultraviolet enhanced xenon lamp and a phase-locked amplifier to measure the light response characteristic curve of the ZnMgO solar blind ultraviolet detector packaging structure, uses a semiconductor analyzer to test the dark current of the ZnMgO solar blind ultraviolet detector packaging structure, and uses a laser light source and an oscilloscope to test the response time of devices.
Obtaining the following parameters of the ZnMgO solar blind ultraviolet detector packaging structure:
as shown in FIG. 16, the current-voltage (I-V) curve of the encapsulated ZnMgO solar blind UV detector shows that the dark current of the encapsulated device is 0.7pA at 10V bias. And after the pins of the ZnMgO solar blind ultraviolet detector packaging structure are repeatedly bent and pulled and strong shock impact is carried out on the ZnMgO solar blind ultraviolet detector packaging structure, the measurement is continued, the measured parameters are not changed, and the corresponding dark current is still 0.7pA under the bias voltage of 10V.
As shown in FIG. 17, the optical responsivity curve of the packaged ZnMgO solar blind ultraviolet detector under the 10V voltage operating condition is shown, and it can be seen from the curve that the peak responsivity of the packaged device is 3.75A/W under the 10V bias voltage. And after the pins of the device are repeatedly bent and pulled and strong shock impact is carried out on the device, the measurement is continued, and the measured parameters are not changed.
As shown in fig. 18, for the response time curve of the packaged ZnMgO solar blind uv detector under 10V voltage operating condition (the response time is the time that the current decreases from 0.9X ampere to 0.1X ampere assuming that the current when the uv light is off is X ampere), it can be seen from the curve that the response time of the packaged device is 4.6 milliseconds at 10V bias, i.e. the time t2-t1 in the figure. And after the pins of the device are repeatedly bent and pulled and strong shock impact is carried out on the device, the measurement is continued, and the measured parameters are not changed.
In conclusion, the ZnMgO solar blind ultraviolet detector packaging structure provided by the invention has better performance and stability.
According to the packaging method and the packaging structure of the ZnMgO solar blind ultraviolet detector, the ZnMgO solar blind ultraviolet detector chip is fixed on the base, the interdigital electrodes are led out by the metal wires to serve as pins of the ZnMgO solar blind ultraviolet detector packaging structure, then the exposed metal wires and the connecting parts of the ZnMgO solar blind ultraviolet detector chip are packaged by the ultraviolet-permeable packaging glue, and therefore the complete ZnMgO solar blind ultraviolet detector packaging structure is formed, the ZnMgO solar blind ultraviolet detector can be used in an area outside a laboratory conveniently, the use range of the ZnMgO solar blind ultraviolet detector chip is expanded, and the ZnMgO solar blind ultraviolet detector chip is more practical.
The packaging method and the packaging structure of the ZnMgO solar blind ultraviolet detector provided by the invention have the other remarkable advantages that the used materials are low in price, the method is simple, gold wire bonding is not needed, and the problems existing in the traditional packaging method are solved. Meanwhile, the packaging glue for sealing the chip is separated from the epoxy resin for fixing the chip, so that the problem of reduced device responsiveness caused by the independent use of the packaging glue is solved.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A packaging method of a ZnMgO solar blind ultraviolet detector is characterized by comprising the following steps:
providing a base, a ZnMgO solar blind ultraviolet detector chip, two metal wires, epoxy resin and packaging adhesive, wherein the base comprises a first surface and a second surface which are oppositely arranged, and a side surface for connecting the first surface and the second surface; the ZnMgO solar blind ultraviolet detector chip comprises a substrate, a ZnMgO layer, an interdigital electrode structure and two indium particles; the packaging adhesive is transparent to ultraviolet rays;
fixing the ZnMgO solar blind ultraviolet detector chip on the first surface of the base;
manufacturing a through hole penetrating through the side face and the first surface on the base, wherein the through hole comprises a first hole and a second hole, and the axis of the first hole is perpendicular to the axis of the second hole;
enabling the two metal wires to penetrate through the through holes, wherein the first ends of the metal wires protrude out of the first surface, and the second ends of the metal wires protrude out of the side surface;
connecting the end parts of the first ends of the two metal wires to one indium particle respectively, wherein the second ends of the metal wires are used as pins of the ZnMgO solar blind ultraviolet detector, and the non-end part of the first ends of the metal wires is arranged above the ZnMgO solar blind ultraviolet detector chip and the base in an overhead mode;
dotting the epoxy at a non-end of the first ends of the wires, the epoxy covering the wires on a side of the first surface facing away from the second surface and the through-holes on the first surface;
and covering the interdigital electrode of the interdigital electrode structure of the ZnMgO solar blind ultraviolet detector chip with the packaging adhesive.
2. The method for encapsulating the ZnMgO solar blind ultraviolet detector as set forth in claim 1, wherein the forming of the through hole penetrating the side surface and the first surface on the base includes:
drilling two first holes on a first surface on the base by using a drill bit, wherein the axis of each first hole is perpendicular to the first surface;
drilling two second holes on the side surface of the base by using a drill bit, wherein the axis of each second hole is perpendicular to the side surface;
and the two second holes are communicated with the two first holes in a one-to-one correspondence manner to form two through holes.
3. The method for encapsulating the ZnMgO solar blind ultraviolet detector as set forth in claim 2, wherein the passing of the two wires through the through hole includes:
passing one of said wires through a through hole communicating said first hole with said second hole;
and the other metal wire penetrates through the through hole which is communicated with the second hole through the other first hole.
4. The method for encapsulating the ZnMgO solar blind ultraviolet detector according to claim 2, wherein the connecting the end portions of the first ends of the two wires to one of the indium grains respectively comprises:
pressing the end part of the first end of each metal wire onto one indium particle, wherein the non-end part of the first end of each metal wire is arranged above the ZnMgO solar blind ultraviolet detector chip and the base in an overhead mode;
using conductive adhesive to point the contact position of the metal wire and the indium particles;
and placing the base, the ZnMgO solar blind ultraviolet detector chip, the two metal wires and the conductive adhesive in an oven, and baking for 2-48 hours at the temperature of 50-200 ℃, including the endpoint values.
5. The method for encapsulating the ZnMgO solar blind ultraviolet detector chip according to claim 2, wherein the step of covering the interdigital electrode of the interdigital electrode structure of the ZnMgO solar blind ultraviolet detector chip with the encapsulation adhesive specifically comprises the steps of:
coating the packaging adhesive on an interdigital area of the ZnMgO solar blind ultraviolet detector chip;
placing in an oven, and baking at 50-200 deg.C for 2-48 hr, inclusive.
6. The method for encapsulating the ZnMgO solar blind ultraviolet detector as claimed in claim 2, wherein the step of fixing the ZnMgO solar blind ultraviolet detector chip on the first surface of the base specifically comprises:
and adhering the ZnMgO solar blind ultraviolet detector chip to the first surface of the base by adopting an adhesive.
7. The method for encapsulating the ZnMgO solar blind ultraviolet detector as claimed in any one of claims 1 to 6, wherein the providing of the substrate and the ZnMgO solar blind ultraviolet detector chip specifically comprises:
providing a substrate;
epitaxially growing a layer of ZnMgO on one surface of the substrate;
evaporating metal electrodes;
photoetching the metal electrode to form two interdigital electrode structures, wherein each interdigital electrode structure comprises a plurality of interdigital electrodes which are arranged in parallel and a connecting part which is vertical to the interdigital electrodes and is connected with the interdigital electrodes;
and respectively manufacturing and forming indium grains on the connecting parts of the two interdigital electrode structures.
8. A ZnMgO solar blind ultraviolet detector encapsulation structure, which is formed by applying the encapsulation method of any one of claims 1 to 7, and comprises:
the base comprises a first surface, a second surface and a side surface, wherein the first surface and the second surface are oppositely arranged, the side surface is connected with the first surface and the second surface, the base further comprises a through hole penetrating through the side surface and the first surface, the through hole comprises a first hole and a second hole, and the axis of the first hole is perpendicular to the axis of the second hole;
the ZnMgO solar blind ultraviolet detector chip is fixed on the first surface of the base and comprises a substrate, a ZnMgO layer, an interdigital electrode structure and two indium particles;
each metal wire penetrates through the through hole, the end part of each metal wire is electrically connected with one indium particle, and the non-end part of each metal wire is arranged above the ZnMgO solar blind ultraviolet detector chip and the base in an overhead mode;
an epoxy covering the wires on the side of the first surface facing away from the second surface and the through-holes on the first surface;
and the packaging adhesive is permeable to ultraviolet rays and covers the ZnMgO solar blind ultraviolet detector chip, the metal wire positioned on one side of the first surface, which is far away from the second surface, and the through hole on the first surface.
9. The ZnMgO solar blind ultraviolet detector package structure of claim 8, wherein the metal wire is one of an aluminum wire, a gold wire, a silver wire, a stainless steel wire, a copper wire, a nickel wire, and an iron wire.
10. The ZnMgO solar blind ultraviolet detector package structure of claim 8, wherein the packaging adhesive is silicone.
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| CN109616529A (en) * | 2018-12-07 | 2019-04-12 | 中国科学院长春光学精密机械与物理研究所 | A kind of ultraviolet detector and preparation method thereof |
| CN110212040A (en) * | 2019-06-05 | 2019-09-06 | 中国科学院长春光学精密机械与物理研究所 | A kind of solar blind ultraviolet detector and preparation method thereof |
| CN111006760B (en) * | 2019-12-11 | 2021-07-06 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet detection system and ultraviolet detection method |
| CN111261735B (en) * | 2020-03-19 | 2022-07-08 | 中国科学院长春光学精密机械与物理研究所 | ZnMgO film, ultraviolet detector and preparation method thereof |
| CN111244202A (en) * | 2020-03-19 | 2020-06-05 | 中国科学院长春光学精密机械与物理研究所 | ZnMgO ultraviolet detector and preparation method thereof |
| CN111725196B (en) * | 2020-06-30 | 2023-11-28 | 长沙安牧泉智能科技有限公司 | High-temperature in-situ ultraviolet detection system |
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