CN108630783A - A kind of preparation method of the photoelectric detector based on diamond - Google Patents
A kind of preparation method of the photoelectric detector based on diamond Download PDFInfo
- Publication number
- CN108630783A CN108630783A CN201710810314.1A CN201710810314A CN108630783A CN 108630783 A CN108630783 A CN 108630783A CN 201710810314 A CN201710810314 A CN 201710810314A CN 108630783 A CN108630783 A CN 108630783A
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- Prior art keywords
- diamond
- electrode
- photoelectric detector
- graphite
- preparation
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 55
- 239000010432 diamond Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 22
- 239000010439 graphite Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000010276 construction Methods 0.000 claims abstract description 3
- 239000010931 gold Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000011435 rock Substances 0.000 claims 1
- 238000013532 laser treatment Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
A kind of preparation method of the photoelectric detector based on diamond, use diamond for substrate, diamond surface is processed into graphite electrode with laser, build diamond photoelectric detector, the graphite electrode is interdigital electrode or/and annular electrode, laser scanning direct construction photodetector array or detector array, photodetector electrode is used to be formed by graphite on the diamond.Beneficial effects of the present invention are：Pass through laser treatment diamond surface, treated diamond generates electrode of the graphite as Buddha's warrior attendant ground mass photoelectric detector, the graphite electrode prepare it is convenient and simple, it is good with diamond contact, be tightly combined, it is corrosion-resistant, it is wear-resistant, laser scanning can be utilized to make the electrode of different graphic, structure different structure, various sizes of photoelectric detector, using the photodetector array high sensitivity of this method structure, fast response time, stability is good.
Description
Technical field
The invention belongs to semiconductor device arts, are specifically related to a kind of preparation of the photoelectric detector based on diamond
Method.
Background technology
Diamond has many excellent performances as wide bandgap semiconductor materials.Diamond has preferable chemical stabilization
Property, and there is larger energy gap（5.5 ev）, low dielectric constant, high breakdown voltage, high electron hole mobility
With high thermal conductivity and superior radiation resistance.All these physics, chemically and electrically characteristic makes diamond be possible to
As the electronic device material to work under the mal-conditions such as the following high temperature, intense radiation.
The energy gap of diamond is 5.5 ev, and it is 225 nm to be equivalent to cutoff wavelength, has " day is blind " characteristic, without
The background interference of sunlight carries out ultraviolet detection with higher accuracy and sensitivity on the wave band.In recent years, day blind purple
External detector is protected in ozone layer monitoring, thermal-flame monitoring, high pressure electric leakage arc light detecting, guided missile flame detecting and shortwave
The fields such as close communication have a wide range of applications.Ultraviolet technology has given military and civilian field of detecting as a kind of novel technology
Bring huge technological change.
For diamond base ultraviolet light electric explorer part, preferable Ohmic contact mostly uses gold in order to obtain（Au）, titanium
（Ti）/ tungsten（W）Equal metals do electrode.
Electrode is done using Au, required step is generally vacuum evaporation, photoetching, annealing etc., and the thickness of Au also has one to contact
Fixed influence, and the price of Au is more expensive, improves the cost of device.And electrode is done using Ti, in air due to Ti
One layer of fine and close inertia oxidation film can be generated, to keep Ti electrode conductivuties good, needs to carry out again after one layer of W of sputtering outside Ti
Annealing.It can be seen that it is complex to do electrode process using metal, and metal electrode is easily worn, and is unfavorable for the long-term of device
It uses.
Invention content
The technical problem to be solved by the present invention is to：A kind of preparation method of the photoelectric detector based on diamond is provided,
It can realize and directly prepare photoelectric detector on the diamond.
In order to solve the above-mentioned technical problem, the technical scheme is that：
A kind of preparation method of the photoelectric detector based on diamond, uses diamond for substrate, with laser by diamond table
Surface treatment builds diamond photoelectric detector at graphite electrode.
The graphite electrode is interdigital electrode or/and annular electrode.
Laser scanning direct construction photodetector array or detector array, photodetector electrode are used on the diamond
It is formed by graphite.
Beneficial effects of the present invention are：By laser treatment diamond surface, treated diamond generates graphite and makees
For the electrode of Buddha's warrior attendant ground mass photoelectric detector, the graphite electrode prepare it is convenient and simple, it is good with diamond contact, in conjunction with tight
It is close, it is corrosion-resistant, it is wear-resistant, laser scanning can be utilized to make the electrode of different graphic, structure different structure, various sizes of light
Electric explorer part, using the photodetector array high sensitivity of this method structure, fast response time, stability is good.
Description of the drawings
Fig. 1 is the Raman spectrum of single-crystal diamond in the embodiment of the present invention 2.
Fig. 2 is the Raman spectrum for the diamond that laser treatment is crossed in the embodiment of the present invention 2.
Fig. 3 is the device architecture schematic diagram of the present invention.
Fig. 4 is the spectrum response of the present invention.
Specific implementation mode
A kind of preparation method of the photoelectric detector based on diamond, uses diamond for substrate, using laser scanning,
Pattern electrodes directly are formed in diamond surface, constitute diamond photoelectric detector.
The graphite electrode includes the arbitrary graphics electrode device such as interdigital electrode, annular electrode.
Photodetector array is built with laser on the diamond, with laser treatment diamond surface, processed Buddha's warrior attendant
Stone directly generates graphite, the electrode of the graphite of generation as semiconductor devices.On the diamond, laser scanning methods can be passed through
Patterned electrodes are directly prepared, Buddha's warrior attendant ground mass photodetector array is built.
By laser treatment diamond surface, treated diamond generates graphite as Buddha's warrior attendant ground mass photodetector
The electrode of part, the graphite electrode prepare it is convenient and simple, it is good with diamond contact, be tightly combined, corrosion-resistant, wear-resistant, graphite
Photodetector array high sensitivity that electrode is built on diamond surface, fast response time, stability are good.
Embodiment 1
With laser treatment diamond surface, processed surface becomes black, bent with the I-V of semiconductor analysis instrument test surfaces
Line is obtaining the results show that the resistivity of this layer of substance is 11.43 × 10-6It is good to illustrate that this layer of atrament has by Ω m
Electric conductivity.
Embodiment 2
Diamond is taken, tests its Raman collection of illustrative plates as shown in Figure 1, being laser that 10W wavelength is 1064 nm to diamond with power
Surface is handled, to its Raman collection of illustrative plates of processed surface test as shown in Fig. 2, Raman collection of illustrative plates shows that sample is that crystallization is good
Good diamond, the black portions that laser treatment is crossed are graphite.
Embodiment 3
Diamond surface is processed into the graphite electrode of interdigital shape, structure by the method repeated in embodiment 2 using laser scanning
Diamond base ultraviolet light electric explorer part is built, and spectral responsivity test is carried out to device, test scope is 200-400 nm, such as
Shown in Fig. 4.It can be obtained by spectrum response, the diamond base ultraviolet light electric explorer part of graphite electrode is with good
Wavelength selectivity.
Embodiment 4
A large-area diamond is taken, with the laser that wavelength is 1064 nm, diamond surface is processed into electricity of different shapes
Pole, electrode shape include：The arbitrary graphics polarizing electrode such as interdigital electrode, annular electrode builds diamond photoelectric detector array
Or detector array.
What has been described above is only a preferred embodiment of the present invention, it is noted that for those skilled in the art,
Under the premise of not departing from general idea of the present invention, several changes and improvements can also be made, these should also be considered as the present invention's
Protection domain.
Claims (3)
1. a kind of preparation method of the photoelectric detector based on diamond, it is characterised in that：Use diamond for substrate, with swash
Diamond surface is processed into graphite electrode by light, builds diamond photoelectric detector.
2. the preparation method of the photoelectric detector based on diamond as described in claim 1, it is characterised in that：Graphite electrode
For interdigital electrode or/and annular electrode.
3. the preparation method of the photoelectric detector based on diamond as claimed in claim 1 or 2, it is characterised in that：In gold
Laser scanning direct construction photodetector array or detector array are used on hard rock, photodetector electrode is to be formed by graphite
's.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710810314.1A CN108630783A (en) | 2017-09-11 | 2017-09-11 | A kind of preparation method of the photoelectric detector based on diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710810314.1A CN108630783A (en) | 2017-09-11 | 2017-09-11 | A kind of preparation method of the photoelectric detector based on diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108630783A true CN108630783A (en) | 2018-10-09 |
Family
ID=63705801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710810314.1A Pending CN108630783A (en) | 2017-09-11 | 2017-09-11 | A kind of preparation method of the photoelectric detector based on diamond |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108630783A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110441242A (en) * | 2019-08-14 | 2019-11-12 | 郑州大学 | Gas detecting system and method based on diamond micro-cantilever |
| CN111725336A (en) * | 2019-03-21 | 2020-09-29 | 中国科学院宁波材料技术与工程研究所 | Detection medium, preparation method thereof and diamond detector |
| CN112839449A (en) * | 2021-01-06 | 2021-05-25 | 南昌大学 | Diamond circuit board preparation method based on laser direct processing |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1647227A (en) * | 2002-03-08 | 2005-07-27 | 宋简民 | Amorphous diamond materials and associated methods for the use and manufacture thereof |
| CN1874009A (en) * | 2006-06-27 | 2006-12-06 | 上海大学 | Method for preparing detector in ultraviolet light |
| CN101692468A (en) * | 2009-09-27 | 2010-04-07 | 上海大学 | Method for preparing diamond-film photosensitive transistors |
| JP2010120819A (en) * | 2008-11-20 | 2010-06-03 | Nec Corp | Semiconductor device having carbon film and method for manufacturing the same |
| CN102386281A (en) * | 2011-11-15 | 2012-03-21 | 上海大学 | Manufacturing method for zinc oxide (ZnO)/nanocrystalline-diamond-thin-film-based hetero junction photoelectric detector |
| CN106784044A (en) * | 2016-12-26 | 2017-05-31 | 哈尔滨工业大学 | A kind of three-dimensional structure diamond ultraviolet detector and preparation method thereof |
-
2017
- 2017-09-11 CN CN201710810314.1A patent/CN108630783A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1647227A (en) * | 2002-03-08 | 2005-07-27 | 宋简民 | Amorphous diamond materials and associated methods for the use and manufacture thereof |
| CN1874009A (en) * | 2006-06-27 | 2006-12-06 | 上海大学 | Method for preparing detector in ultraviolet light |
| JP2010120819A (en) * | 2008-11-20 | 2010-06-03 | Nec Corp | Semiconductor device having carbon film and method for manufacturing the same |
| CN101692468A (en) * | 2009-09-27 | 2010-04-07 | 上海大学 | Method for preparing diamond-film photosensitive transistors |
| CN102386281A (en) * | 2011-11-15 | 2012-03-21 | 上海大学 | Manufacturing method for zinc oxide (ZnO)/nanocrystalline-diamond-thin-film-based hetero junction photoelectric detector |
| CN106784044A (en) * | 2016-12-26 | 2017-05-31 | 哈尔滨工业大学 | A kind of three-dimensional structure diamond ultraviolet detector and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111725336A (en) * | 2019-03-21 | 2020-09-29 | 中国科学院宁波材料技术与工程研究所 | Detection medium, preparation method thereof and diamond detector |
| CN111725336B (en) * | 2019-03-21 | 2022-02-01 | 中国科学院宁波材料技术与工程研究所 | Detection medium, preparation method thereof and diamond detector |
| CN110441242A (en) * | 2019-08-14 | 2019-11-12 | 郑州大学 | Gas detecting system and method based on diamond micro-cantilever |
| CN112839449A (en) * | 2021-01-06 | 2021-05-25 | 南昌大学 | Diamond circuit board preparation method based on laser direct processing |
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Application publication date: 20181009 |