CN105044584B - A kind of system for being used to detect the electric charge and electric field response of semiconductor devices - Google Patents
A kind of system for being used to detect the electric charge and electric field response of semiconductor devices Download PDFInfo
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- CN105044584B CN105044584B CN201510394163.7A CN201510394163A CN105044584B CN 105044584 B CN105044584 B CN 105044584B CN 201510394163 A CN201510394163 A CN 201510394163A CN 105044584 B CN105044584 B CN 105044584B
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention provides a kind of system for being used to detect the electric charge and electric field response of semiconductor devices, including：Current loop, semiconductor devices to be detected are connected in the current loop；Pulse laser, for periodically applying laser pulse to semiconductor devices to be detected, to form photogenerated charge at semiconductor devices；Wherein, photogenerated charge is transmitted in current loop to form transient state photogenerated current；The sampling resistor for being arranged in current loop and being connected with semiconductor devices；The voltage signal collector in parallel with sampling resistor, the voltage differential signal at the both ends for gathering sampling resistor；The voltage source in parallel with semiconductor devices, for providing periodically variable modulation voltage to the semiconductor devices；The source-series galvanic separation with voltage, for preventing transient state photogenerated current or its HFS from flowing through voltage source.The system of the present invention can detect transient state photogenerated current exactly, and suitable for charge response process very slow in detection semiconductor devices.
Description
Technical field
The present invention relates to the performance detection field of semiconductor devices, is used to detect semiconductor devices more particularly to a kind of
The system of electric charge and electric field response.
Background technology
It is related to solar cell etc. partly to lead with semiconductor technology and solar cell correlative study and the development of technology
It is to study one of important means and application of its performance that the photoelectric respone of body device, which carries out detection,.At present from electrical and optical
Angle has developed the detection means of a variety of research performance of semiconductor device, includes the test of direct current volt-ampere, the AC impedance of electricity
And capacity measurement, and the means of testing such as optical absorption, transmitting and photic absorption.The invention of these means of testing is greatly facilitated
The development and application of semiconductor light electrical domain.
Solar cell is a kind of special semiconductor devices, and it can be used for generating electricity, and is that one kind has fine business application
The technology of prospect.Research to solar cell can further reduce device cost, improve device efficiency, so as to preferably real
Now to the utilization of solar energy.Detection and research to solar cell different time scales is to promote solar battery technology development
A kind of important means, be widely used at present.For associated semiconductor devices such as solar cells, except biography can be passed through
The charge transport process quickly that system means are detected, it is also possible to a kind of very slow charge response process, this process be present
The corresponding quantity of electric charge may.
In this case, traditional detection means is difficult to detect electric charge and electric field response process corresponding to this very slow process,
This is for the understanding to device working mechanism, and the further design and performance lifting to device is unfavorable, so needing one kind
Means effectively detect the physical process.
The content of the invention
It is an object of the invention to solve or extenuate deficiency of the prior art at least in part, so as to provide one kind
For detecting the electric charge of semiconductor devices and the system of electric field response.
System according to the electric charge and electric field response for detecting semiconductor devices of the present invention can include：
Current loop, semiconductor devices to be detected are connected in the current loop；
Pulse laser, for periodically applying laser pulse to semiconductor devices to be detected, partly to be led described
Photogenerated charge is formed at body device；Wherein, the photogenerated charge is transmitted to form transient state photogenerated current in the current loop；
The sampling resistor for being arranged in the current loop and being connected with the semiconductor devices；
The voltage signal collector in parallel with the sampling resistor, the voltage difference at the both ends for gathering the sampling resistor
Signal；
The voltage source in parallel with the semiconductor devices, for providing periodically variable modulation to the semiconductor devices
Voltage；With
The source-series galvanic separation with the voltage, for preventing the transient state photogenerated current or transient state photoproduction electricity
The HFS of stream flows through the voltage source.
Alternatively, the galvanic separation includes inductance.
Alternatively, the voltage signal collector includes oscillograph.
Alternatively, the voltage source is the voltage signal generator that can produce a variety of various forms of modulation voltages.
Alternatively, the pulse laser includes the laser of multiple laser pulses that can produce different wave length, or
The pulse laser is the single laser for the laser pulse that can produce multiple different wave lengths.
Alternatively, the system also includes the optical filter being arranged between the pulse laser and the semiconductor devices,
The intensity of the laser pulse received for adjusting the semiconductor devices.
Alternatively, the system also includes being used to accommodate the sample room of the semiconductor devices, for for the semiconductor device
Part provides predetermined temperature environment, atmosphere and/or electromagnetic shielding.
Alternatively, the system also includes being used for the bias light source for providing bias light to the semiconductor devices.Alternatively, institute
State bias light source and the pulse laser is arranged so that the bias light is incident along different angles from the laser pulse
To the semiconductor devices.
Especially, the semiconductor devices of system of the invention particularly suitable for solar cell form.
The laser pulse that the present invention is provided by pulse laser produces photogenerated current at semiconductor devices to be measured, can
So that the extremely faint electric charge of semiconductor device inside and electric field change process to be amplified by photogenerated current effect, so as to
Enough realize the detection of small quantity.Further, the present invention can be made by providing periodic modulation voltage to semiconductor devices
Obtain the electric charge of semiconductor device inside and electric field response process carries out periodically constantly reproduction, to guarantee to obtain and record
Testing result.Pass through the combination of above-mentioned two means so that system of the invention can detect electricity very slow in semiconductor devices
Lotus response process.
According to the accompanying drawings will be brighter to the detailed description of the specific embodiment of the invention, those skilled in the art
Above-mentioned and other purposes, the advantages and features of the present invention.
Brief description of the drawings
Some specific embodiments of the present invention are described in detail by way of example, and not by way of limitation with reference to the accompanying drawings hereinafter.
Identical reference denotes same or similar part or part in accompanying drawing.It should be appreciated by those skilled in the art that these
What accompanying drawing was not necessarily drawn to scale.In accompanying drawing：
Fig. 1 is the structural representation of detecting system according to an embodiment of the invention；
Fig. 2 is the circuit theory diagrams of detecting system shown in Fig. 1；
Fig. 3 show influence to transient state photogenerated current of shunt voltage source in fig. 2 and galvanic separation high frequency every
From the effect of aspect；
Fig. 4 (a) shows transient state photogenerated current detection schematic diagram of the semiconductor devices under modulation voltage；
Fig. 4 (b) shows response schematic diagram of the internal electric field of semiconductor devices under pulse modulation voltage；
Fig. 5 shows transient state photogenerated current of the perovskite solar cell of different structure under different HVDC Modulation voltages
Response；The wherein corresponding mesoporous perovskite battery in (a) part, (b) part corresponding flat perovskite battery；With
Fig. 6 shows transient state photogenerated current response of the solar cell of different structure under pulse modulation voltage；Wherein
(a) the corresponding perovskite battery based on methylamine lead iodine in part, the corresponding perovskite battery based on methylamine lead bromine in (b) part, (c) portion
Divide corresponding silicon solar cell.
Embodiment
Detecting system shown in Fig. 1 is used for the electric charge and electric field response for detecting semiconductor devices, wherein schematically drawing
The semiconductor devices 10 of solar cell form to be detected.The semiconductor devices 10 accesses at two electrode 11 and 12
The current loop 110 being made up of circuit 111-113.Pulse laser 101 is used to periodically apply to the semiconductor devices 10
Laser pulse, so as to form photogenerated charge at semiconductor devices 10.The photogenerated charge is transmitted to be formed in current loop 110
Transient state photogenerated current.In order to detect the photogenerated charge of semiconductor device inside different depth and current information, it is desirable to provide
The laser pulse of different wave length, such as 532nm, 660nm etc..Two generation different wave length laser are exemplarily provided in Fig. 1
The pulse laser 101 of pulse, one of them can be selected at work to provide the laser pulse of required wavelength.Other
In embodiment, the laser of more corresponding different wave lengths can also be set, or can use can produce a variety of different ripples
The single laser of long laser pulse, such as the pulse laser of Wavelength tunable.Incided to adjust on semiconductor devices 10
Laser pulse intensity, optical filter 108 is provided between pulse laser 101 and semiconductor devices 10.
The sampling resistor 103 connected with semiconductor devices 10 is provided with the current loop 110.So, transient state photogenerated current
The sampling resistor 103 can be flowed through in current loop 110.Voltage source 105 be arranged in circuit 114 and with semiconductor devices 10
With sampling resistor 103 into parallel relationship, to provide periodically variable modulation voltage to semiconductor devices 10.Pass through modulation electricity
Pressure, thus it is possible to vary the internal electric intensity of semiconductor devices 10.Meanwhile the modulation voltage can be also acted on sampling resistor 103
And required modulation electric current is formed in the circuit 112 at sampling resistor 103 and its place.Therefore, sampling resistor 103 is flowed through
Electric current is actually the superimposed current for modulating electric current and transient state photogenerated current.The voltage signal collector 106 of such as oscillograph is used
Voltage differential signal in collection sampling resistor 103 both ends.The voltage differential signal and its change reflect and flow through sampling resistor 103
Electric current and its change.Because modulation electric current has known form, so, electric current and its change of sampling resistor 103 are flowed through
Just reflect transient state photogenerated current to be detected and its change.It is appreciated that the modulation voltage of voltage source 105 acts on semiconductor device
Also the modulation electric current of non-photoproduction can be produced when on part 10, still, the size of the modulation voltage can be chosen such that the non-photoproduction
Electric current is much smaller than foregoing transient state photogenerated current, and reaches the degree for ignoring the non-photogenerated current.So, in semiconductor devices 10
Non- photogenerated current it is insignificant in the case of, it is believed that as caused by the modulation voltage of voltage source 105 modulate electric current only pass through
Sampling resistor 105.In one embodiment, voltage source 105 can be the electricity that can produce a variety of various forms of modulation voltages
Press signal generator, the voltage signal generator can by certain frequency to semiconductor devices 10 apply needed in the form of modulation electricity
Pressure, such as d. c. voltage signal, sinusoidal AC voltage signal, pulse voltage signal or scanning sawtooth voltage signal etc., and then
Change internal electric intensity and the distribution of semiconductor devices 10.By changing modulation voltage, semiconductor devices can be made to be in not
Same electrical state, the distribution of its internal charge, electric-field intensity and distribution are modulated, and this modulation can be in transient state photogenerated current
Intensity and transport time etc. reflect., can be by semiconductor devices in different electricity using the modulation voltage
Controllable switching is carried out between state.For example impulse modulation is used, the built in field of semiconductor devices can be connected between varying strength
Continuous switching, this handoff procedure can be also reflected by transient state photogenerated current.
The voltage differential signal that voltage signal collector 106 is gathered can be used for detect semiconductor devices 10 electric charge and
Electric field response.But embody semiconductor devices 10 in electric charge and electric field response variation characteristic be transient state photogenerated current and its
Change, it is desirable to transient state photogenerated current (or at least it neutralizes the related HFS of electric field response) to flow completely through
Sampling resistor 103 shunts without voltage source 105 by circuit 114 and thereon.Therefore, being provided with circuit 114 and voltage source
The galvanic separation 107 of 105 series connection, voltage source 105 is flowed through to prevent transient state photogenerated current from being particularly its HFS, and makes it
Only transmitted in current loop 110.In the embodiment shown in fig. 1, the galvanic separation 107, which is included in circuit 114, is connected on
Two inductance of the both sides of voltage source 105.In one embodiment of the invention, the frequency of the low frequency part of transient state photogenerated current with
The laser pulse frequency of pulse laser 101 is corresponding, such as 20Hz or so；The frequency of the HFS of transient state photogenerated current exists
MHz magnitudes, and the frequency for the modulation voltage that voltage source 105 is applied and the frequency of corresponding modulation electric current be in Hz magnitudes, because
This can select the inductance value of galvanic separation 107 in a wide range, to be realized in circuit 114 to transient state photogenerated current
High-frequency isolation, and it is easy to ensure the impedance matching of circuit.So it has been effectively ensured at sampling resistor 103 to transient state photoproduction
The accuracy of gallon.In one embodiment, the inductance value of galvanic separation 107 can be suitably selected, and makes its basic
The whole transient state photogenerated current of upper isolation.
The semiconductor devices 10 may be accommodated in a sample room 109, and the sample room 109 can be the semiconductor device
Part 10 provides predetermined temperature environment, atmosphere (such as atmosphere of inert gases) and electromagnetic shielding.It can thus detect exactly
The photogenerated current and electric field response characteristic of different temperatures lower semiconductor device 10.The sample room 109 can have optical window
115.Pulse laser 101 produces laser pulse can be via the optical window after optical filter 108 perpendicular through sample room 109
115, then direct irradiation is on the surface of semiconductor devices 10, so as to which vitalizing semiconductor device 10 produces photogenerated charge.
Bias light source 116 can provide bias light to semiconductor devices 10.The bias light and pulse that bias light source 116 provides
The laser pulse that laser 101 provides forms an angle, so as to be incident to semiconductor devices 10 along different angles.Bias light source
116 bias lights provided can also be incident to semiconductor devices 10 via the optical window 115 of sample room 109.In an implementation
In example, the bias light source 116 can be stable White LED.
As shown in figure 1, pulse laser 101 can be connected with the signal of voltage signal collector 106, with trigger voltage signal
Collector 106, it is set to record the voltage difference of the both sides of sampling resistor 103.
System shown in Fig. 1 provides modulation voltage at work, from voltage source 105 to semiconductor devices 10, so as to half
Conductor device 10 is internally formed desired modulated internal electric field.A selected pulse laser 101 is according to default
Wavelength sends laser pulse, and free photogenerated charge is produced with vitalizing semiconductor device 10.The photogenerated charge is in semiconductor devices
Transient state photogenerated current is formed under 10 internal electric field and the driving of diffusion in current loop 110.Due to galvanic separation
107 effect, the transient state photogenerated current or HFS wherein of interest will not be shunted by voltage source 105, and substantially complete
Portion flows through sampling resistor 103.Meanwhile the modulation voltage of voltage source 105 applies to sampling resistor 103, sampling is flowed through so as to produce
The modulation electric current of resistance 103.So, the electric current for flowing through sampling resistor 103 is the superposition electricity of transient state photogenerated current and modulation electric current
Stream, and form voltage difference on sampling resistor 103 by it.Voltage on sampling resistor 103 is gathered by voltage signal collector 106
Difference signal.The voltage differential signal and its change gathered corresponds to superimposed current and its change for flowing through sampling resistor 103.Due to
Modulation current segment in superimposed current is to be formed by voltage source 105 according to predetermined way and is known, therefore can be from electricity
The part corresponding to transient state photogenerated current is got in the voltage differential signal that pressure signal picker 106 gathers.Transient state photogenerated current
Determine that reflect semiconductor devices transports performance by the internal charge and Electric Field Characteristics of semiconductor devices.Transient state photogenerated current
Corresponding voltage differential signal then have recorded semiconductor devices response process of internal charge and electric field after outside Electric Field Modulated, bag
Include the characteristics such as intensity and time response.By adjusting the frequency of laser pulse and its time delay between modulated voltage signal,
It can be detected with various modes such as pulse, multiple-pulse or continuous impulses.
Fig. 2 shows the principle schematic of the circuit part of system shown in Figure 1.It will be clear that the inspection from Fig. 2
Semiconductor devices 10, voltage source 105, sampling resistor 103 and voltage signal collector 106 in examining system are to be connected in parallel knot
Structure, the noise that this can be common effectively in transient suppression circuit.The galvanic separation 107 of inductance form enters to transient state photogenerated current
High-frequency isolation is gone, has avoided transient state photogenerated current and shunted by the voltage source 105 of such as signal generator, so as to improve measurement
The degree of accuracy.Show that the normalized transient state photogenerated current for flowing through sampling resistor changes with time in Fig. 3, label 31 indicates
Be the voltage source 105 for not setting such as signal generator in fig. 2 situation, label 32 indicate be to be provided with voltage in fig. 2
Source 105 but without the situation for carrying out high-frequency isolation, what label 33 indicated is to be provided with voltage source 105 and by being galvanically isolated in fig. 2
Device 107 carries out the situation of high-frequency isolation.As can be seen from Fig. 3, being separately provided voltage source 105 can cause to transient state photogenerated current really
Shunting, still, by setting the galvanic separation 107 of such as inductance effectively to reduce voltage source 105 to transient state photogenerated current
Shunting, reach and be not provided with the essentially identical effect of voltage source 105.
As it was previously stated, the very slow very weak charge response process of semiconductor device inside is difficult to be had by traditional means
Effect detection.In the present invention, for the charge response process quickly in semiconductor devices, transient state photogenerated current can be soon
It is changed between varying strength.For very slow charge response process, in the presence of modulation voltage, semiconductor devices it is interior
Portion's electric field can undergo slow change procedure, and this process is difficult detection by conventional method, but according to the detection system of the present invention
System can effectively be recorded the process by transient state photogenerated current.As shown in Fig. 4 (a) and Fig. 4 (b), due to traditional
The electric current that detection means depend directly on external circuit measures, but outer caused by the slow response process of semiconductor device inside
Portion's electric current may be extremely faint, it is difficult to effectively detection.Although transient absorption also can sensitive detection parts internal charge amount change, but
When the quantity of electric charge is extremely low, and change is extremely slow, it is also difficult to be detected.But according to the detecting system of the present invention, although the quantity of electric charge
Very low, change is very slow, and its caused electric field change can be amplified by photogenerated current, pass through photogenerated current as detection
Change procedure can then be changed with sensitive detection parts internal electric field and its corresponding charge response process.
In fig. 5 and fig., modulation voltage corresponds to the square wave that is wherein presented, and the electricity caused by transient state photogenerated current
Buckling turn to be superimposed on the square wave as the peak value of pulse indicated by arrow.It is big by the cycle for being appropriately arranged with modulation voltage
It is small, the change of the transient state photogenerated current in semiconductor devices can be caused fully to be repeated within each cycle of modulation voltage
Occur.
The perovskite battery that Fig. 5 gives the different structure obtained using the systematic survey of the present invention is adjusted in different direct currents
Photogenerated current signal under system.Semiconductor device structure adopted here is transparent fluorine-doped tin oxide conductive substrates/dioxy
Change titanium Window layer/methylamine lead iodine light-absorption layer/golden back electrode, be a kind of typical heterojunction semiconductor device.Pulse laser is from saturating
Bright conductive substrates are incident, are absorbed by methylamine lead iodine light-absorption layer, so as to produce photogenerated charge, finally in the case where tying electric field action, flow through
External circuit, photogenerated current is formed, and be sampled resistance and oscillograph recording.By applying HVDC Modulation electricity by signal generator
Pressure, the hetero-junctions electric-field intensity will change.Typically as bias increases, knot electric field weakens.Fig. 5 test result shows,
The photogenerated current collection status of the device is influenceed substantially by knot electric field, and also closely related with battery structure.The result is for reason
Solution the type device Charge Transport Proper ty plays an important roll.
Fig. 6 gives the result of detection of the transient state photogenerated current under pulse modulation voltage to different solar cells.
Shown in Fig. 6 (a) part to transparent fluorine-doped tin oxide conductive substrates/titanium dioxide Window layer/methylamine lead iodine light-absorption layer/gold
The change in transient state photogenerated current signal intensity and direction is can be clearly seen that in the result of back electrode heterojunction device, this shows
A kind of slow electric field response process in second-time.By the analysis to the process, device inside electric charge sound can be obtained
Answer process and its mechanism.The detection of other two kinds of batteries in Fig. 6 shown in (b) and (c) is not seen similar to institute in (a)
This phenomenon shown.This further demonstrates that detecting system proposed by the present invention is fast-response system, can be used for slow device
Internal charge response is detected.
So far, although those skilled in the art will appreciate that detailed herein have shown and described multiple showing for the present invention
Example property embodiment, still, still can be direct according to present disclosure without departing from the spirit and scope of the present invention
It is determined that or derive many other variations or modifications for meeting the principle of the invention.Therefore, the scope of the present invention is understood that and recognized
It is set to and covers other all these variations or modifications.
Claims (10)
1. a kind of system for being used to detect the electric charge and electric field response of semiconductor devices, including：
Current loop, semiconductor devices to be detected are connected in the current loop；
Pulse laser, for periodically applying laser pulse to semiconductor devices to be detected, with the semiconductor device
Photogenerated charge is formed at part；Wherein, the photogenerated charge is transmitted to form transient state photogenerated current in the current loop, and
The pulse laser can provide the laser pulse of different wave length；
The sampling resistor for being arranged in the current loop and being connected with the semiconductor devices；
The voltage signal collector in parallel with the sampling resistor, the voltage difference letter at the both ends for gathering the sampling resistor
Number；
The voltage source in parallel with the semiconductor devices, for providing periodically variable modulation electricity to the semiconductor devices
Pressure；With
The source-series galvanic separation with the voltage, for preventing the transient state photogenerated current or the transient state photogenerated current
HFS flows through the voltage source.
2. system according to claim 1, it is characterised in that the galvanic separation includes inductance.
3. system according to claim 1, it is characterised in that the voltage signal collector includes oscillograph.
4. system according to claim 1, it is characterised in that the voltage source is that can produce a variety of various forms of tune
The voltage signal generator of voltage processed.
5. system according to claim 1, it is characterised in that the pulse laser can produce different ripples including multiple
The laser of long laser pulse, or the pulse laser be can produce multiple different wave lengths laser pulse it is single
Laser.
6. system according to claim 1, it is characterised in that also partly led with described including being arranged on the pulse laser
Optical filter between body device, the intensity of the laser pulse received for adjusting the semiconductor devices.
7. system according to claim 1, it is characterised in that also include being used for the sample for accommodating the semiconductor devices
Room, for providing predetermined temperature environment, atmosphere and/or electromagnetic shielding for the semiconductor devices.
8. system according to claim 1, it is characterised in that also include being used to provide bias light to the semiconductor devices
Bias light source.
9. system according to claim 8, it is characterised in that the bias light source and the pulse laser are arranged to make
Obtain the bias light and be incident to the semiconductor devices along different angles from the laser pulse.
10. according to the system described in claim any one of 1-9, it is characterised in that the semiconductor devices is solar cell.
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| CN204789902U (en) * | 2015-07-03 | 2015-11-18 | 中国科学院物理研究所 | System for an electric charge and electric field response for detecting semiconductor device |
| CN105527483A (en) * | 2016-01-06 | 2016-04-27 | 中国科学院物理研究所 | Transient photovoltage test system capable of realizing electro-optic independent modulation |
| CN107167696B (en) * | 2017-06-08 | 2024-04-09 | 深圳振华富电子有限公司 | Device and method for detecting open circuit of inductor |
| CN110324004B (en) * | 2019-07-01 | 2021-06-11 | 中国科学院物理研究所 | Method and system for testing quantum efficiency index of solar cell |
| CN110572128B (en) * | 2019-09-03 | 2021-06-01 | 中国人民大学 | Detection device and method for time-resolved charge extraction and ion migration |
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| DE19511869B4 (en) * | 1995-03-31 | 2004-02-26 | Geiler, Hans-Dieter, Dr. | Method and arrangement for response analysis of semiconductor materials with optical excitation |
| CN2457738Y (en) * | 2000-12-27 | 2001-10-31 | 中国科学院上海技术物理研究所 | Micro laser beam scanning spectrum device based on laser beam induction current |
| WO2009001237A1 (en) * | 2007-06-25 | 2008-12-31 | Koninklijke Philips Electronics N.V. | Photodiode self-test |
| CN201141897Y (en) * | 2007-09-26 | 2008-10-29 | 苏州阿特斯阳光电力科技有限公司 | Portable solar component tester |
| CN201096865Y (en) * | 2007-10-18 | 2008-08-06 | 珈伟太阳能(武汉)有限公司 | Solar battery tester |
| CN101452043B (en) * | 2007-11-29 | 2010-12-29 | 中国科学院半导体研究所 | Microscopic measurement system for measuring electron spin injection and filtration |
| CN101769983B (en) * | 2008-12-31 | 2012-02-15 | 中国科学院物理研究所 | Solar battery IPCE curve measuring device and method |
| CN102365558A (en) * | 2009-02-07 | 2012-02-29 | 拓科学股份有限公司 | High speed detection of shunt defects in photovoltaic and optoelectronic devices |
| CN102338847B (en) * | 2010-07-20 | 2013-10-02 | 中国科学院物理研究所 | Device and method for measuring solar battery performance curves |
| CN102097539B (en) * | 2011-01-20 | 2012-09-19 | 南昌航空大学 | Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction |
| CN102253323A (en) * | 2011-06-14 | 2011-11-23 | 中国科学院半导体研究所 | Variable temperature microscopic measurement system for measuring related electron-spin transportation |
| CN204789902U (en) * | 2015-07-03 | 2015-11-18 | 中国科学院物理研究所 | System for an electric charge and electric field response for detecting semiconductor device |
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