CN106847987B - CIGS superelevation, ultrafast wide wavestrip optical position sensitive detector - Google Patents
CIGS superelevation, ultrafast wide wavestrip optical position sensitive detector Download PDFInfo
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- CN106847987B CN106847987B CN201710202189.6A CN201710202189A CN106847987B CN 106847987 B CN106847987 B CN 106847987B CN 201710202189 A CN201710202189 A CN 201710202189A CN 106847987 B CN106847987 B CN 106847987B
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- 239000011521 glass Substances 0.000 claims abstract description 7
- 230000031700 light absorption Effects 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 21
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- 230000035945 sensitivity Effects 0.000 abstract description 6
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- 241000931526 Acer campestre Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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Abstract
CIGS superelevation, ultrafast wide wavestrip optical position sensitive detector, the invention belongs to the technical fields of position sensor, including growing photoresponse film layer on a glass substrate, it is arranged in photoresponse film layer by conducting wire and voltmeter or the concatenated first electrode of oscillograph and second electrode, the photoresponse film layer includes from supreme Mo layers of the metal back electrode set gradually of glass substrate, CIGS light-absorption layers, CdS transition zones, ZnO Window layers, transparent conductive layer, and first electrode and second electrode are arranged on transparent conductive layer.Position sensor of the present invention can realize wide wavestrip quick response, the effect of superelevation signal, high sensitivity.
Description
Technical field
The invention belongs to the technical fields of position sensor, are related to optical position sensitive detector, and in particular to CIGS superelevation,
Ultrafast width wavestrip optical position sensitive detector, position sensor of the present invention can realize wide wavestrip quick response, superelevation signal
Effect, high sensitivity.
Background technology
When point light source irradiation PN junction, heterojunction semiconductor or metal semiconductor junction, due to light area and non-illumination
The difference of interregional carrier concentration can measure voltage value, this effect using two electrodes drawn on the same surface of knot
It should be referred to as lateral photovoltaic effect.As point light source moves between electrodes, the position of voltage difference and point light source is presented linearly
Relationship.This feature makes lateral photovoltaic effect be widely used in position sensitive detector.
There are many unique advantages for the position sensor of Photoelectric Detection：If (1) is without work dead zone, surveyed region can be provided
Continuity position data；(2) high resolution, fast response time are linear preferable.(3) be not required to surface sweeping, can peripheral circuits,
With higher cost performance.But it is low currently based on the position sensitive detector generally existing sensitivity of lateral photovoltaic effect
Problem, although can largely improve sensitivity by biasing modulation, this method also there are one prodigious drawback,
That is exactly under high power laser light irradiation, and the linearity is extremely deteriorated, and in other words namely voltage difference is no longer in light position
Existing linear relationship.This phenomenon largely limits the investigative range and detection accuracy of such detector.
Invention content
The object of the present invention is to provide a kind of overcome the deficiencies in the prior art, superelevation based on lateral photovoltaic effect, ultrafast
Optical position sensitive detector greatly improves the investigative range and detection accuracy of such detector.And at the same time, pass through material
The selection of material keeps the time response velocity fails of such position sensor ultrafast.
The present invention be realize its purpose the technical solution adopted is that：
CIGS superelevation, ultrafast wide wavestrip optical position sensitive detector, include the photoresponse film of growth on a glass substrate
Layer is arranged in photoresponse film layer by conducting wire and voltmeter or the concatenated first electrode of oscillograph and second electrode, described
Photoresponse film layer include from supreme Mo layers of the metal back electrode set gradually of glass substrate, CIGS light-absorption layers, CdS transition
Layer, ZnO Window layers, transparent conductive layer, first electrode and second electrode are arranged on transparent conductive layer.
The thickness of each layer is respectively in photoresponse film layer：Mo layers >=1 μm of metal back electrode, 1-2 μm of CIGS light-absorption layers,
CdS transition zones 100-300nm, ZnO Window layer 100-500nm, transparent conductive layer 50-100nm.
The photoresponse film layer is Nanometer Semiconductor Films or nanometer metallic film.
The first electrode and second electrode uses indium.
The shape of the first electrode and second electrode is round or square, and two electrodes etc. are big, and diameter is not
More than 1mm, good Ohmic contact is easily formed with multi-layer compound film.
The conducting wire is silver wire or copper conductor, and a diameter of 100-250 μm of conducting wire, conducting wire is slightly not as easily connected to very much sample
Product surface, while resistance is larger, influences measurement accuracy, conducting wire is too thin to increase unnecessary cost again, and is easily broken off.
The key of the present invention is the technology effect that CIGS thin film is applied to lateral photovoltaic effect, and achieves unexpected
Fruit.Research application in terms of CIGS thin film is generally used as battery at present, because its materials is few, efficient, stability is good, is easy to softening
It is produced with takeup type, in terms of being widely used in battery, however uses it for lateral photovoltaic effect and have not been reported, also have no the elder generation of practice
Example, also nobody expects using it for lateral photovoltaic effect.The present invention uses it for lateral photovoltaic effect and needs to overcome lateral light
Many problems in effect are lied prostrate, is had been found that in research and directly applies CIGS thin film, lateral photovoltaic effect can not carry out, detection
Device sensitivity is very low (not as good as traditional silicon substrate p-n structure or p-i-n structure)；The technical program by CIGS thin film into
Row inventive improvements, the creative thickness for working out transparent conductive layer are 50-100nm, not only CIGS thin film are made successfully to answer
For in lateral photovoltaic effect, and unexpected effect is achieved, response signal is greatly enhanced, and the response time is significantly
Shorten so that detector detection is sensitiveer.
The beneficial effects of the invention are as follows：
1, the present invention utilizes the thin-film material containing CIGS, and unexpected makes this optical position sensitive detector believe with superelevation
Number and the characteristics of the ultrafast response time.
2, optical position sensitive detector position resolution of the present invention is stable, linear relationship is good.
3, the setting of ITO layer thickness is most important, creative when ITO layer thickness is reduced to 50-100nm, compared to
The response signal of the transparent conductive layer of existing 300-400nm thickness improves 3.5 times or more, obtains superelevation signal, visits
It surveys sensitiveer.
4, the sequence of photoresponse film layer structure of the present invention be glass substrate, Mo layers, cigs layer, CdS layer, ZnO layer, ITO
Layer.Mo layers are metal back electrode, by setting in the bottom, collect photohole；CIGS is light absorbing layer, and incident light is substantially all
It is absorbed by the layer, generates electron-hole pair；CdS is transition zone, due to level-density parameter between interface, the layer and cigs layer
A built in field is formed, light activated electron-hole pair is made to detach, and electronics is moved towards CdS layer direction, hole is moved towards Mo layers
It is dynamic；ZnO is Window layer, and incident light can be allowed to penetrate without absorbing, and can stop that the electronics of tunnelling separation is compound quickly；
ITO is upper conductive layer, and incident light can be allowed to penetrate without absorbing, and has good conductive characteristic, collects tunnelling separation
Electronics.Pass through the creative research to each structure sheaf, it is determined that the arrangement relationship of each layer, in conjunction with the thickness of each layer, realize by
CIGS thin film is successfully applied in lateral photovoltaic effect.
5, the setting of Mo layer thickness is in order to which back electrode can form uniform good conductive layer, and the setting of the thickness can
To obtain better electric conductivity；Cigs layer thickness is set as 1-2 μm, can almost absorb incident all light intensity, is increased
The absorption efficiency of light not only increases economic cost, and be unfavorable for photoproduction-electron hole pair when the layer thickness is more than 2 μm
Separation and tunnelling；CdS layer thickness is arranged in 100-300nm so that stronger built-in electricity can be formed between the interfaces CIGS and CdS
, while also the electronics of separation can be enable to be easy to tunnel through CdS layer；ZnO layer thickness is arranged in 100-500nm, Neng Gouyou
Effect prevents electronics that tunnelling detaches compound probability again, and will not excessively increase tunneling time of the electronics in ZnO；ITO layer is thick
Degree setting is in 50-100nm, and extremely important for the response of lateral photovoltaic effect, sheet resistance is bigger, it is easy in different location
Between form voltage difference, when thickness is too thick (300-400nm), ITO layer resistivity is very low, and surface is substantially at equipotential, so
Lateral photovoltaic response is very small, this is obtained by long-term research summary.
6, nonlinearity of the invention controls within 3%, and extreme higher position sensitivity reaches 226mV/mm, can survey wavelength model
It encloses for 350-1150nm, the response time reaches 16.987 μ s.
Description of the drawings
Fig. 1 is the experiment schematic diagram of specific embodiment 1.
Fig. 2 is the experiment schematic diagram of specific embodiment 2.
Fig. 3 is the LPV of the present invention with the variation diagram of optical maser wavelength.
Fig. 4 is the LPV of the present invention with the variation diagram of laser power.
Fig. 5 be the present invention chopper frequencies be 10Hz, laser beam respectively away from second electrode be 0.2mm, 0.4mm,
Response time test chart when 0.8mm.
Fig. 6 be the present invention chopper frequencies be 4KHz, laser beam respectively away from second electrode be 0.2mm, 0.4mm,
Response time test chart when 0.8mm.
Fig. 7 is the variation diagram for changing ITO thickness to lateral photovoltaic.
In figure, 1, sheet glass substrate, 2, Mo layers of metal back electrode, 3, CIGS light absorbing layers, 4, CdS transition zones, 5, ZnO windows
Mouthful layer, 6, transparent conductive layer, 7, first electrode, 8, second electrode, 9, voltmeter, 10, laser, 11, oscillograph, 12, copped wave
T, device, x, illuminated laser spot represent response time symbol away from second electrode distance.
Specific implementation mode
Coevaporation method, magnetron sputtering method, chemical bath method, low pressure chemical gas has been respectively adopted in photoresponse film layer of the present invention
It is prepared by phase sedimentation.The present invention reaches realization originally by the modulation of the power and wavelength and chopper frequencies of change laser irradiation
The technical operation of invention.The present invention is further explained in the light of specific embodiments.
Embodiment 1
Photoresponse film layer is grown on sheet glass substrate 1, photoresponse film layer is followed successively by gold from sheet glass substrate 1 is supreme
Belong to back electrode Mo layers 2, CIGS light-absorption layers 3, CdS transition zones 4, ZnO Window layers 5, transparent conductive layer 6, forms heterojunction structure
Position sensitive detector connects first electrode 7 and second electrode 8 with conducting wire with voltmeter 9, and irradiation laser 10 does lateral photovoltaic
Effect test, obtain LPV figure, replace laser 10 power and wavelength, repeat aforesaid operations, gained LPV with laser beam position change
Change curve and can be seen that CIGS structure devices optical position sensitive detector in measured range possesses the response signal of superelevation.
Embodiment 2
Photoresponse film layer is grown on sheet glass substrate 1, photoresponse film layer is followed successively by gold from sheet glass substrate 1 is supreme
Belong to back electrode Mo layers 2, CIGS light-absorption layers 3, CdS transition zones 4, ZnO Window layers 5, transparent conductive layer 6, forms heterojunction structure
Position sensitive detector connects first electrode 7 and second electrode 8 with conducting wire with oscillograph 11, and reaches light position in laser 10
Add chopper 12 before setting sensitive detector, adjust 10 irradiation position of laser and fixation, enable laser irradiation, adjusts 12 frequency of chopper
Rate, the response time that this optical position sensitive detector can be obtained by oscillograph 11 scheme, do data processing and inversion, obtain this optical position
Sensitive detector possesses the ultrafast response time.
As seen in Figure 3, in the wavelength of 671nm, signal is most strong, up to 100000 μ V；As seen in Figure 4,
With the increase of power, signal is increasingly stronger, and the power signal of 5mW is most strong, up to 150000 μ V；It can be with by Fig. 5 and Fig. 6
Find out, under same laser frequency, laser irradiating position is different, then the power of signal is different, but the response time is identical, signal
The strong and weak distance with laser irradiating position apart from second electrode it is related, close apart from second electrode, then signal strength is low, distance the
Two electrodes are remote, then signal strength is high；Under different frequency, same irradiation position, signal strength is identical, but the response time is different,
Frequency is bigger, and time resolution is higher, and the obtained response time is truer.
CIGS is applied on optical position sensitive detector by the invention, this is in existing optical position detector technology
In be unprecedented technology, CIGS is mainly applied on solar cell in the prior art, in solar cells
Effect is to absorb luminous energy to be converted to electric energy, and to generate electric current, what is mainly solved in solar cells is luminous energy to electric energy
Conversion ratio is applied to that on solar cell electric current can be generated；CIGS is applied to optical position by the invention
When on sensitive detector, due to being position sensor, what is faced is that position resolution, voltage difference are asked with the linearity of light position
Topic, the problem are the key that realize position detector function, are not encountered in area of solar cell, and face the problem,
Inventor have passed through long-term creative research, suitable by layers of material, the arrangement of each layer of strictly selecting photoresponse film layer
The correlation properties such as sequence, the thickness design of each layer so that each technical characteristic complements each other, functionally mutually support, to greatly
The power for improving response signal, realize that high response signal, signal intensity become apparent from, while the response time is faster so that visit
It surveys sensitiveer；And under high power laser light irradiation, voltage difference is still in a linear relationship with light position.
Claims (5)
1.CIGS wide wavestrip optical position sensitive detectors, including the photoresponse film layer that is grown in glass substrate (1), setting exist
By conducting wire and voltmeter (9) concatenated first electrode (7) and second electrode (8) in photoresponse film layer, which is characterized in that institute
The photoresponse film layer stated includes from glass substrate (1) the supreme metal back electrode set gradually Mo layers (2), CIGS light-absorption layers
(3), CdS transition zones (4), ZnO Window layers (5), transparent conductive layer (6), first electrode (7) and second electrode (8) setting exist
On transparent conductive layer (6), the thickness of each layer is respectively in photoresponse film layer：Mo layers >=1 μm of metal back electrode, CIGS inhale
1-2 μm of photosphere, CdS transition zones 100-300nm, ZnO Window layer 100-500nm, transparent conductive layer 50-100nm.
2. CIGS wide wavestrips optical position sensitive detector according to claim 1, which is characterized in that the photoresponse is thin
Film layer is Nanometer Semiconductor Films or nanometer metallic film.
3. CIGS wide wavestrips optical position sensitive detector according to claim 1, it is characterised in that：The first electrode
(7) and second electrode (8) uses indium.
4. CIGS wide wavestrips optical position sensitive detector according to claim 1, it is characterised in that：The first electrode
(7) and the shape of second electrode (8) is round or square, and diameter is no more than 1mm.
5. CIGS wide wavestrips optical position sensitive detector according to claim 1, it is characterised in that：The conducting wire is silver
Conducting wire or copper conductor, a diameter of 100-250 μm of conducting wire.
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| CN102483461A (en) * | 2009-09-08 | 2012-05-30 | 皇家飞利浦电子股份有限公司 | Imaging Measurement System With A Printed Photodetector Array |
| CN105932090A (en) * | 2016-04-27 | 2016-09-07 | 河北大学 | Thin-film-structure position sensitive detector based on lateral photovoltage effect |
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