CN104143586A - Method for manufacturing photoelectric detector based on integrated chip with alloy semiconductor nano-structure - Google Patents
Method for manufacturing photoelectric detector based on integrated chip with alloy semiconductor nano-structure Download PDFInfo
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- CN104143586A CN104143586A CN201410326461.8A CN201410326461A CN104143586A CN 104143586 A CN104143586 A CN 104143586A CN 201410326461 A CN201410326461 A CN 201410326461A CN 104143586 A CN104143586 A CN 104143586A
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- 229910052980 cadmium sulfide Inorganic materials 0.000 description 15
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 15
- 230000004044 response Effects 0.000 description 12
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- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- SRKRSWKCLVMJRZ-UHFFFAOYSA-N [S-2].S.[SeH2].[Cd+2] Chemical compound [S-2].S.[SeH2].[Cd+2] SRKRSWKCLVMJRZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to a method for manufacturing a photoelectric detector based on an integrated chip with an alloy semiconductor nano-structure and belongs to the field of photoelectric detection. According to the method for manufacturing the photoelectric detector which is high in broadband sensitivity, large in scale and low in cost based on the integrated chip which is integrally grown on a single substrate and provided with the one-dimensional CdSSe ternary alloy semiconductor nano-structure with the gradually-changing band gap, electrode structures in different shapes and with different widths are manufactured on the chip on which the CdSxSe1-X ( x ranging from zero to one) nano-structure which comprises different components and provided with the gradually-changing band gap is grown in a gradually-changing mode through heat evaporation or electron beam evaporation, and finally, the photoconductive detector which is high in broadband sensitivity and can cover the whole visible region and the near ultraviolet region is manufactured by taking the whole chip as a detecting unit and electrically connecting the whole chip with a nonlinear current amplifying circuit.
Description
Technical field
The present invention relates to a kind of making of the photodetector based on alloy semiconductor nanostructure integral substrate, belong to photodetection field.
Background technology
Optical semiconductor photoconductive detector has a wide range of applications in national economy and military every field, as at visible ray or near infrared band, is mainly used in radiation measurement and detection, Photometric Measurement, camera tube target surface etc.; Be mainly used in the aspect such as missile guidance, infrared thermal imaging at infrared band.Wherein, there is the high-sensitivity miniature photo-detector of broadband spectral response owing to thering is huge application potential in fields such as optical sensing, accurate spectral measurements, become gradually one of target of photodetection area research.
The photodetector of existing market exists many weak points, for example: silicon (indirect gap semiconductor material) base photodetector, although spectral response range is wider, but the feature of indirect bandgap material has determined that its efficiency, absorption coefficient and sensitivity etc. are all lower than direct gap semiconductor photodetector.It is larger that its large area detector is prepared difficulty, and rely on the preparation technology of traditional micro-process equipment, and cost is higher.
Direct gap semiconductor detector in visual field and ultraviolet have higher absorption coefficient, there is higher signal to noise ratio.But specific direct gap semiconductor material only has higher responsiveness and sensitivity near the incident photon of frequency band gap, therefore semiconductor photo detector only can carry out high sensitivity detection to the light in some wave-length coverages.
Along with the expansion of alloy semiconductor nano materials research, although majority use the method for chemical vapour deposition (CVD), the alloy semiconductor nanostructure (different band gap) that has realized different component generates in very little on-chip gradual change, research finds that the one-dimensional alloy nanometer semiconductor structure of gradual change growth on monocrepid possesses well tunable luminous behavior, prove that in theory ternary or quaternary alloy nano material integral substrate also have potential advantages aspect opto-electronic conversion, as features such as wide spectral responses simultaneously.
The present invention utilizes the CdSSe alloy nano structure (substrate of the one-dimensional nano structure from CdS even transition to CdSe) of the band gap gradual change of integrated growth on monocrepid, by the research to its photoelectric property, finds that it has good photoconductive property.Based on this, we realize, and broadband is highly sensitive, large area photodetection, has overcome the shortcoming of conventional photodetectors and has advanced the development of ternary alloy nano material in photodetection field.
Summary of the invention
The object of the invention is in existing detecting technique, in investigative range, to respond heterogeneity in order solving, to make the high problem of large area photodetector cost, a kind of making of the photodetector based on alloy semiconductor nanostructure integral substrate is provided, and the method has realized the photodetector taking the adjustable CdSSe ternary alloy three-partalloy semiconductor one-dimensional nano structure of the band gap of gradual change growth on monocrepid as the highly sensitive response homogeneous of basic large area.
The object of the invention is to be achieved through the following technical solutions.
The making of the photodetector based on alloy semiconductor nanostructure integral substrate, concrete steps are as follows:
Step 1: utilize the controlled low cost CVD method of temperature and pressure, by controlling reaction temperature (1000 DEG C) heating rate (10 DEG C/S-20 DEG C/S) air-flow and growth time (gas flow: 6sccm-20sccm, growth time: 1 hour-4 hours) condition, the alloy semiconductor nanostructure of integrated content gradually variational on monocrepid;
Step 2: choose good sample from the product of step 1 gained;
Step 3: the mask plate of making the spaced strip electrode of tool and interdigitated electrodes;
Step 4: by the evaporation means of thermal evaporation or electron beam evaporation, make the difformity optimized and the metal electrode structure of width on the substrate of the nanostructure of graded profile;
Step 5: the product obtaining in step 4 is connected with peripheral non-linear amplifying circuit, obtains the photodetector of CdSSe (selenium cadmium sulfide) the ternary alloy three-partalloy semiconductor one-dimensional nano structure of the band gap gradual change based on integrated growth on large area monocrepid.
Monocrepid described in step 1 needs before use through preliminary treatment, processing method is: on monocrepid, obtain ternary CdSSe alloy nano structure by chemical gaseous phase depositing process, wherein monocrepid used put into can be rapidly heated and can maintain for a long time the heater of constant temperature before need through small ion sputter gold-platedly, form on monocrepid surface the gold thin film layer that thickness is about 200-500 nanometer.
The standard of the good sample described in step 2 is: under room temperature illumination, can find out that the color sample of growth is from yellow (the same CdS of color) gradual change to black (the same CdSe of color), the 266nm pulse laser under out of focus excites the abundant luminescence generated by light situation of lower sample: color is from green (luminescence generated by light situation is identical with pure CdS situation) gradual change to red (luminescence generated by light situation is identical with pure CdSe situation).
Difformity described in step 4 and the electrode structure of width comprise interdigital electrode structure and strip electrode structure, electrode structure specific requirement is: interdigital electrode covers whole substrate, the length of electrode and spacing determine by substrate size, and the width of electrode is substrate width between 1/10 to 1/20 conventionally.Between strip electrode, all micro-nano structures will be contained in interval, and electrode width is that between 0.5 millimeter to 2 millimeters, thickness is in micron dimension.
The means of passing through thermal evaporation or electron beam evaporation described in step 4 are grown to have on the substrate of different component nanostructure in gradual change and are made strip electrode structure and interdigital metal electrode structure, follow-up test is based semiconductor test macro, adopts two probe light method for measuring conductance.Wherein, in order to reduce the potential barrier between probe material (used herein is tungsten) and metal electrode material, electrode material is preferably aluminium herein.(concrete preferred material will be depending on probe material.
Described peripheral amplifying circuit is that (amplifying circuit has non-linear gain to non-linear DC micro-electric current amplifier, and dark current multiplication factor is 1, and the larger multiplication factor of photoelectric current is larger, maximum gain 10
3).
Beneficial effect
1, the making of the photodetector based on alloy semiconductor nanostructure integral substrate of the present invention, because the present invention is taking the CdSSe ternary alloy three-partalloy nanometer semiconductor structure of the band gap gradual change of integrated growth as basis, realize and can cover whole visible region and near ultraviolet broadband response and survey compared with homogeneous, highly sensitive photoconduction, so the present invention collects the high-sensitive feature of rice noodles photoconductive detector and the adjustable advantage of alloy nano-wire peak response in one, having overcome to a certain extent single semi-conducting material is the basic inhomogenous problem of response.
2, the making of the photodetector based on alloy semiconductor nanostructure integral substrate of the present invention, because the effective interface of CdSSe alloy nano structure generation dark current is very little, causing dark current is the one thousandth of its corresponding normalization body phase photo-detector, so greatly increase the signal to noise ratio of detector self.
3, the making of the photodetector based on alloy semiconductor nanostructure integral substrate of the present invention, can utilize the ternary of other classes and quaternary alloy to prepare this type of photodetector equally.Widen the application of detector
4, the making of the photodetector based on alloy semiconductor nanostructure integral substrate of the present invention, owing to adopting the means of the method for lower-cost chemical vapour deposition (CVD) and the evaporation of thermal evaporation or electron beam evaporation can realize the making of detector, the cost of manufacture of the detector greatly reducing, and can make larger area photodetector.The silicon-based detector of relatively existing a large amount of uses, cost of manufacture is low, and useful detection area can reach tens cm
2.To substitute existing silicon-based detector in military and civilian detector field part.
Brief description of the drawings
The CdSSe monocrepid of the different base of Fig. 1 is the plating that obtains in embodiment 1 difformity electrode;
Fig. 2 is the photoelectric current contrast (bias voltage 10V) under the irradiation of the equal-wattage under the Different electrodes shape that obtains of embodiment 2;
Fig. 3 is the light and shade current diagram of the integrated CdSSe alloy nano structure substrate of monocrepid under different voltage;
Fig. 4 is the variation of the responsiveness of the integrated CdSSe nanostructure substrate in mica substrate that obtains of embodiment 4 to different illumination wavelength;
Fig. 5 is the variation of the photoelectric current under the low frequency irradiation that obtains of embodiment 4.
Embodiment
Provide specific embodiment below in conjunction with specific embodiment.
Embodiment 1
The making of the photodetector based on alloy semiconductor nanostructure integral substrate, concrete steps are as follows:
1. be 1:1 uniform stirring 10 minutes in mortar by cadmium sulfide and cadmium selenide according to mol ratio; Silicon chip cleans in ultrasonic washing instrument with absolute ethyl alcohol 10 minutes, and dry rear gold-plated 60 seconds of ion sputtering instrument of using, clean small-sized porcelain container and pyroceram container for subsequent use.Then the mixture of CdS (cadmium sulfide) and CdSe (cadmium selenide) is put into porcelain container, and porcelain container is placed on to the central authorities of pyroceram container.In other porcelain container, put into 1 gold-plated silicon chip, be placed on the downstream of pyroceram container air-flow, apart from pyroceram container center position 11 centimeters.High temp glass container is put into the heater that can be rapidly heated and can maintain for a long time constant temperature, the first connection traffic meter in upstream of pyroceram container, connecting gas extraction system, downstream connects exhaust treatment system, pass into again the gaseous mixture of argon gas and hydrogen, after exhaust 1 hour, throughput is adjusted into 6sccm, start heating, after 10 minutes, be heated to 1000 DEG C, after cooling, close the heater that can be rapidly heated and can maintain for a long time constant temperature, continue ventilation, until cool to room temperature, generate the velvet-like product of color from yellow gradual change to black at substrate surface, obtain the CdSSe ternary alloy three-partalloy semiconductor one-dimensional nano structure of the band gap gradual change of integrated growth.
2. from the product of step 1 gained, choose good sample;
3. make the mask plate of the spaced strip electrode of tool and interdigitated electrodes;
4. then by the evaporation means of thermal evaporation or electron beam evaporation, the metal electrode structure that has the substrate of CdSxSe1-x (x from 0 to the 1) nanostructure (gradual change of band gap size) of different component to make difformity and width in gradual change growth;
The shape appearance figure of the sample obtaining by above step as shown in Figure 1.
Embodiment 2
Based semiconductor test macro (Keithley-4200), study and plated Different electrodes material, Different electrodes thickness, the photoconductive property of the CdSSe alloy nano structure substrate of the graded component of Different electrodes shape under polychromatic light (white light) irradiates, and the situation of change of photoelectric current.Step is:
1. be 1:1 uniform stirring 15 minutes in mortar by cadmium sulfide and cadmium selenide according to mol ratio; Silicon chip (N-shaped silicon, crystal orientation is <100>) clean in ultrasonic washing instrument with absolute ethyl alcohol 10 minutes, after dry, use gold-plated 60 seconds of ion sputtering instrument, clean small-sized porcelain container and pyroceram container for subsequent use.Then the mixture of CdS (cadmium sulfide) and CdSe (cadmium selenide) is put into porcelain container, and porcelain container is placed on to the central authorities of pyroceram container.In other porcelain container, put into 1 gold-plated silicon chip, be placed on the downstream of pyroceram container air-flow, apart from pyroceram container center position 11 centimeters.Pyroceram container is put into the heater that can be rapidly heated and can maintain for a long time constant temperature, the first connection traffic meter in upstream of pyroceram container, connecting gas extraction system, downstream connects exhaust treatment system, pass into again the gaseous mixture of argon gas and hydrogen, after exhaust 2 hours, throughput is adjusted into 10sccm, start heating, after 15 minutes, be heated to 1000 DEG C, after cooling, close the heater that can be rapidly heated and can maintain for a long time constant temperature, continue ventilation, until cool to room temperature, generate the velvet-like product of color from yellow gradual change to black at silicon chip surface, obtain the CdSSe ternary alloy three-partalloy semiconductor one-dimensional nano structure of the band gap gradual change of integrated growth.
2. from step 1 products therefrom, select good sample;
3. make the mask plate of the spaced strip electrode of tool and interdigitated electrodes;
4. by utilizing the thermal evaporation coating machine band shape of different-thickness and metal aluminium electrode of interdigitation as shown in Figure 2 of the method evaporation by vacuum evaporation in the CdSSe alloy nano structure of silicon base growth, gold electrode, silver electrode;
5. the material of pair electrode, the thickness of electrode is optimized and selects.Electrode material is preferably aluminium, and thickness is its photoconductive property the best within the scope of 100-200nm;
6. adopt two probe light method for measuring conductance, under light conditions, (incident optical power is ≈ 5mW/cm having
2, broad spectrum light source), measure under certain bias voltage, the situation of change of the photoelectric current of Different electrodes shape under the irradiation of equal-wattage, as shown in Figure 2, while being 10 volts for bias voltage, be coated with the situation of change of the silica-based photoelectric current under illumination of interdigitation electrode and strip electrode..
Embodiment 3
Based semiconductor test macro, tests the alloy nano structure of growing under different base, has tested emphatically the photoconductive property of nanostructure synthetic on various substrates,, and the situation of change of photoelectric current/dark current.Step is:
1. be 1:1 uniform stirring 20 minutes in mortar by cadmium sulfide and cadmium selenide according to mol ratio; Different-thickness and different types of monocrepid [silicon chip (N-shaped silicon, crystal orientation is <100>), jewel sheet, mica sheet] clean in ultrasonic washing instrument with absolute ethyl alcohol 10 minutes, after dry, use gold-plated 60 seconds of ion sputtering instrument, clean small-sized porcelain container and pyroceram container for subsequent use.Then the mixture of CdS (cadmium sulfide) and CdSe (cadmium selenide) is put into porcelain container, and porcelain container is placed on to the central authorities of pyroceram container.In other porcelain container, put into 1 gold-plated monocrepid [silicon chip (N-shaped silicon, crystal orientation is <100>), jewel sheet, mica sheet], be placed on the downstream of pyroceram container air-flow, apart from pyroceram container center position 11 centimeters.Pyroceram container is put into the heater that can be rapidly heated and can maintain for a long time constant temperature, the first connection traffic meter in upstream of pyroceram container, connecting gas extraction system, downstream connects exhaust treatment system, pass into again the gaseous mixture of argon gas and hydrogen, after exhaust 2 hours, throughput is adjusted into 15sccm, start heating, after 20 minutes, be heated to 1000 DEG C, after constant temperature 2.5 hours, close the heater that can be rapidly heated and can maintain for a long time constant temperature, continue ventilation, until cool to room temperature, generate the velvet-like product of color from yellow gradual change to black at substrate surface, obtain the CdSSe ternary alloy three-partalloy semiconductor one-dimensional nano structure of the band gap gradual change of integrated growth.
2. from step 1 products therefrom, select good sample;
3. make the mask plate of the spaced strip electrode of tool and interdigitated electrodes;
4. by the evaporation means of thermal evaporation or electron beam evaporation, in the nanostructure distributing at content gradually variational, make electrode structure;
5. with two probe light method for measuring conductance, having or not illumination, (microscope luminous power is 5mW/cm
2, broad spectrum light source), measure under the condition of particular bias voltage the I-V curve of light and shade electric current;
6. optimize and select suitable substrate thickness;
7. with two probe light method for measuring conductance, having or not illumination (microscope luminous power is 5mW/cm2, broad spectrum light source), measure under the condition of different bias voltages the I-V curve of light and shade electric current
8. pair the data obtained records and processes the situation of change that obtains light and shade electric current under different base, as Fig. 3, (dotted line is under optical condition above, the current value of integrated CdSSe nanostructure entirety substrate under different base, dotted line is dark current corresponding under different base below) finding, the light-to-dark-currents ratio value maximum of CdSSe alloy nano structural entity taking mica as substrate under different voltage, silicon takes second place, under sapphire minimum and different substrates, maximum and the mean value of light-to-dark-currents ratio, as shown in table 1.
The light-to-dark-currents ratio of the substrate of several different base of table 1
| ? | Maximum light-to-dark-currents ratio | Average light-to-dark-currents ratio |
| Silicon base | 10 5 | 10 4 |
| Jewel substrate | 10 3 | 10 2 |
| Mica substrate | 10 6 | 10 5 |
In step 7, with two probe light method for measuring conductance, test the I-V curve of the light and shade electric current under the condition of the different bias voltages of CdSSe alloy nano structure substrate of the graded component that has plated Different electrodes shape, the CdSSe alloy nano structure AM aluminum metallization electrode of wherein growing in silicon base, find from the I-V curve of measuring gained, along with the increase photoelectric current of bias voltage increases, maximum appears at 100V bias voltage place, and electric current reaches 30uA.When magnitude of voltage be-when 35V, the bright electric current/dark current of light-to-dark-currents ratio reaches maximum 1.7 × 10
5, detection degree reaches 0.01A/W-0.1A/W (the different detection degree of bias voltage difference).The CdSSe alloy nano structure AM aluminum metallization electrode of growing in sapphire substrates, finds from the I-V curve of measuring gained, when magnitude of voltage be ± when 30V, the photoelectricity flow valuve of correspondence is respectively 1.87 × 10
-4a and-1.89 × 10
-4a, bright electric current/dark current is 1.84 × 10
2.The CdSSe alloy nano structure AM aluminum metallization electrode of growing in mica substrate, finds from the I-V curve of measuring gained, in the time that institute's biasing is 50V and 5V, corresponding bright field light current value is respectively 2 × 10
-4a and 2.11 × 10
-5a, dark current is respectively 1.3 × 10
-8with 1.6 × 10
-9, light-to-dark-currents ratio is also more stable.
Embodiment 4
Based semiconductor test macro, has studied situation of change and the frequency response characteristic of the responsiveness of alloy nano structure under the irradiation of different wave length.Step is:
1. be 1:1 uniform stirring 20 minutes in mortar by cadmium sulfide and cadmium selenide according to mol ratio, mica sheet cleans in ultrasonic washing instrument with absolute ethyl alcohol 10 minutes, after dry, use gold-plated 60 seconds of ion sputtering instrument, clean small-sized porcelain container and pyroceram container for subsequent use.Then the mixture of CdS (cadmium sulfide) and CdSe (cadmium selenide) is put into porcelain container, and porcelain container is placed on to the central authorities of pyroceram container.In other porcelain container, put into 1 gold-plated mica sheet, be placed on the downstream of pyroceram container air-flow, apart from pyroceram container center position 11 centimeters.Pyroceram container is put into the heater that can be rapidly heated and can maintain for a long time constant temperature, the first connection traffic meter in upstream of pyroceram container, connecting gas extraction system, downstream connects exhaust treatment system, pass into again the gaseous mixture of argon gas and hydrogen, after exhaust 1.5 hours, throughput is adjusted into 20sccm, start heating, after 20 minutes, be heated to 1000 DEG C, after constant temperature 3 hours, close the heater that can be rapidly heated and can maintain for a long time constant temperature, continue ventilation, until cool to room temperature, at mica substrate Surface Creation the velvet-like product of color from yellow gradual change to black, obtain the CdSSe ternary alloy three-partalloy semiconductor one-dimensional nano structure of the band gap gradual change of integrated growth,
2. from step 1 products therefrom, select good sample;
3. make the mask plate of the spaced interdigitated electrodes of tool;
4. utilize thermal evaporation coating machine evaporation interdigital electrode configuration;
5. use the illumination light irradiation of different wave length to be coated with the substrate of electrode structure and to measure the photoelectric current under particular bias voltage, dark current situation of change in conjunction with the photoconductive detection means of two probes;
6. data processing, obtains the photoconductive response degree under different wave length, as shown in Figure 4.The homogeneous of its responsiveness in 400nm-800nm wave-length coverage, responsiveness is poor is less than 40%.
7. under light conditions, (incident light luminous power is ≈ 5mW/cm having
2, broad spectrum light source), by regulating chopper rotating speed (rotation speed change, light irradiation frequency also changes), the frequency response characteristic of research alloy nano structure, is illustrated in figure 5 the variation of photoelectric current under low frequency irradiation.
Step 6 and step 7, show for the responsiveness of such detector and the research of frequency response characteristic: the homogeneous of its responsiveness in 400nm-800nm wave-length coverage, and responsiveness is poor is less than 40%; Light in 50Hz is had to good response, and what become higher than the light light-to-dark-currents ratio of 50Hz is less than 5.
Obviously, the above embodiment of the present invention is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.Everyly belong to apparent variation or the still row in protection scope of the present invention of variation that technical scheme of the present invention extends out.
Claims (6)
1. the making of the photodetector based on alloy semiconductor nanostructure integral substrate, is characterized in that: concrete steps are as follows:
Step 1: utilize the controlled low cost CVD method of temperature and pressure, by controlling reaction temperature (1000 DEG C) heating rate (10 DEG C/S-20 DEG C S) air-flow and growth time (gas flow: 6sccm-20sccm, growth time: 1 hour-2 hours) condition, the alloy semiconductor nanostructure of integrated content gradually variational on monocrepid;
Step 2: choose good sample from the product of step 1 gained;
Step 3: the mask plate of making the spaced strip electrode of tool and interdigitated electrodes;
Step 4: by the evaporation means of thermal evaporation or electron beam evaporation, make the difformity optimized and the metal electrode structure of width on the substrate of the nanostructure of graded profile;
Step 5: the product obtaining in step 4 is connected with peripheral non-linear amplifying circuit, obtains the photodetector of the CdSSe ternary alloy three-partalloy semiconductor one-dimensional nano structure of the band gap gradual change based on integrated growth on large area monocrepid.
2. the making of the photodetector based on alloy semiconductor nanostructure integral substrate as claimed in claim 1, it is characterized in that: the monocrepid described in step 1 needs before use through preliminary treatment, processing method is: on monocrepid, obtain ternary CdSSe alloy nano structure by chemical gaseous phase depositing process, wherein monocrepid used put into can be rapidly heated and can maintain for a long time the heater of constant temperature before need through small ion sputter gold-platedly, form on monocrepid surface the gold thin film layer that thickness is about 200-500 nanometer.
3. the making of the photodetector based on alloy semiconductor nanostructure integral substrate, it is characterized in that: the standard of the good sample described in step 2 is: the color sample that can find out growth under room temperature illumination is from yellow gradual change to black, and the 266nm pulse laser under out of focus excites the abundant luminescence generated by light situation of lower sample: color is from green gradual change to red.
4. the making of the photodetector based on alloy semiconductor nanostructure integral substrate, it is characterized in that: the difformity described in step 4 and the electrode structure of width comprise interdigital electrode structure and strip electrode structure, electrode structure specific requirement is: interdigital electrode covers whole substrate, the length of electrode and spacing determine by substrate size, and the width of electrode is substrate width between 1/10 to 1/20 conventionally; Between strip electrode, all micro-nano structures will be contained in interval, and electrode width is that between 0.5 millimeter to 2 millimeters, thickness is in micron dimension.
5. the making of the photodetector based on alloy semiconductor nanostructure integral substrate, it is characterized in that: the means of passing through thermal evaporation or electron beam evaporation described in step 4 are grown to have on the substrate of different component nanostructure in gradual change and made strip electrode structure and interdigital metal electrode structure, follow-up test is based semiconductor test macro, adopts two probe light method for measuring conductance; Wherein, in order to reduce the potential barrier between probe material and metal electrode material, electrode material is preferably aluminium herein; Concrete preferred material will be depending on probe material.
6. the making of the photodetector based on alloy semiconductor nanostructure integral substrate, is characterized in that: described peripheral amplifying circuit is non-linear DC micro-electric current amplifier; Amplifying circuit has non-linear gain, and dark current multiplication factor is 1, and the larger multiplication factor of photoelectric current is larger, maximum gain 10
3.
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| CN110734036A (en) * | 2019-10-28 | 2020-01-31 | 南京大学 | On-chip spectrometer integrated on nanowire and preparation method of detector array thereof |
| CN111525393A (en) * | 2020-02-14 | 2020-08-11 | 湖南大学 | Nano laser with electrically adjustable wavelength |
| CN113899458A (en) * | 2021-09-22 | 2022-01-07 | Oppo广东移动通信有限公司 | Optical sensor and electronic device |
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| CN111525393A (en) * | 2020-02-14 | 2020-08-11 | 湖南大学 | Nano laser with electrically adjustable wavelength |
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