CN113899458A - Optical sensor and electronic device - Google Patents
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- CN113899458A CN113899458A CN202111108927.3A CN202111108927A CN113899458A CN 113899458 A CN113899458 A CN 113899458A CN 202111108927 A CN202111108927 A CN 202111108927A CN 113899458 A CN113899458 A CN 113899458A
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
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Abstract
The present disclosure relates to the field of electronic device technology, and in particular to an optical sensor and an electronic device, wherein the optical sensor comprises: the photosensitive belt is arranged on the substrate; the electrode layer comprises N electrodes, the N electrodes are respectively connected to the photosensitive belt, the photosensitive belt is divided into N-1 photosensitive sections by the N electrodes, band gaps of the photosensitive sections in the N-1 photosensitive sections are different, the photosensitive sections are used for converting optical signals of corresponding frequency bands into electric signals, and the electrodes are used for outputting the electric signals; wherein N is a positive integer greater than or equal to 3. The detection accuracy of the color temperature detected by the sensor can be improved.
Description
Technical Field
The present disclosure relates to the technical field of electronic devices, and in particular, to an optical sensor and an electronic device.
Background
The color temperature sensor is an optical sensor commonly used for mobile phones, the color temperature sensor is generally used for sensing the color temperature of ambient light, and the color temperature data of the ambient light is used for adjusting the white balance of photographing. Currently, the color temperature sensor is usually an RGB sensor or an RYYB sensor, in which each channel (e.g., R channel, G channel, B channel, or Y channel) senses a larger wavelength range of light, and thus the detection accuracy of each channel is low, which results in poor detection accuracy of the final color temperature of the optical sensor.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
An object of the present disclosure is to provide an optical sensor and an electronic apparatus, thereby improving the detection accuracy of a color temperature sensor at least to a certain extent.
According to one aspect of the present disclosure, an optical sensor includes:
a substrate;
the photosensitive belt is arranged on the substrate;
the electrode layer comprises N electrodes, the N electrodes are respectively connected to the photosensitive belt, the photosensitive belt is divided into N-1 photosensitive sections by the N electrodes, band gaps of the photosensitive sections in the N-1 photosensitive sections are different, the photosensitive sections are used for converting optical signals of corresponding frequency bands into electric signals, and the electrodes are used for outputting the electric signals;
wherein N is a positive integer greater than or equal to 3.
According to another aspect of the present disclosure, there is provided an electronic device including the optical sensor described above.
The embodiment of the disclosure provides an optical sensor, including sensitization area and electrode, the band gap of a plurality of sensitization sections of sensitization area is different, make the different positions of sensitization area can respond to the light production signal of telecommunication of different wavelengths, a plurality of electrodes are connected in the sensitization area, influence the illumination and the signal of telecommunication output that produces with the different positions of sensitization area, can realize the response to the light of arbitrary wave band, make the wave band that optical sensor can respond to refine, be favorable to promoting colour temperature optical sensor's detection precision, and then white balance adjustment precision improves when can making electronic equipment shoot, promote electronic equipment's formation of image quality.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
Fig. 1 is a schematic diagram of a first optical sensor provided in an exemplary embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a second optical sensor provided in an exemplary embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a third optical sensor provided in an exemplary embodiment of the present disclosure;
FIG. 4 is a schematic block diagram of an optical sensor provided in an exemplary embodiment of the present disclosure;
FIG. 5 is a schematic diagram of a fourth optical sensor provided in an exemplary embodiment of the present disclosure;
fig. 6 is a schematic diagram of an electronic device provided in an exemplary embodiment of the present disclosure;
fig. 7 is a schematic block diagram of an electronic device provided by an exemplary embodiment of the present disclosure;
fig. 8 is an exploded schematic view of an electronic device according to an exemplary embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
The present exemplary embodiment of the disclosure first provides an optical sensor 10, as shown in fig. 1, the optical sensor 10 including: a substrate 110, a photoreceptor belt 120 and an electrode layer, wherein the photoreceptor belt 120 is arranged on the substrate 110 (the band gap of the photoreceptor belt 120 is continuously gradually changed along the length direction); the electrode layer comprises N electrodes 130, the N electrodes 130 are respectively connected to the photosensitive belt 120, the photosensitive belt 120 is divided into N-1 photosensitive sections 121 by the N electrodes 130, band gaps of the photosensitive sections 121 in the N-1 photosensitive sections 121 are different, the photosensitive sections 121 are used for converting optical signals of corresponding frequency bands into electric signals, and the electrodes 130 are used for outputting the electric signals; wherein N is a positive integer greater than or equal to 3.
The optical sensor 10 provided by the embodiment of the present disclosure, including the photoreceptor belt 120 and the electrodes 130, the band gap of the photoreceptor belt 120 gradually changes along the length direction, so that different parts of the photoreceptor belt 120 can respond to light with different wavelengths to generate electrical signals, the electrodes 130 are connected to the photoreceptor belt 120, influence the illumination at different positions of the photoreceptor belt 120 and output the generated electrical signals, the sensing of light with any waveband can be realized, the waveband that the optical sensor 10 can sense is refined, the detection precision of the color temperature optical sensor 10 is favorably improved, and then the white balance adjustment precision is improved when the electronic device 100 shoots, and the imaging quality of the electronic device is improved.
Further, as shown in fig. 2, the optical sensor 10 provided by the embodiment of the disclosure may further include a protection layer 150, where the protection layer 150 is disposed on a side of the electrode layer away from the substrate 110, and the protection layer 150 is used to protect the electrode layer and the photoreceptor belt 120. The protective layer 150 prevents impurities such as dust, moisture, and the like from entering the inside of the optical sensor 10 and prevents the electrode layer or the photoreceptor belt 120 from being scratched.
The portions of the optical sensor 10 provided by the embodiments of the present disclosure will be described in detail below:
the substrate 110 may be a glass substrate, a quartz substrate, a silicon oxide substrate, a plastic substrate, or the like, and the substrate 110 serves as a structural support. The substrate 110 has at least one plane for arranging the photosensitive belt 120, etc. In practical applications, the surface of the substrate 110 opposite to the cloth plane is also a plane, and the plane is parallel to the cloth plane.
The photoreceptor belt 120 is disposed on the substrate 110, and the band gap of the photoreceptor belt 120 is gradually changed along a predetermined direction. The photoreceptor belt 120 is used to receive optical signals and convert the optical signals into electrical signals. The bandgap of the photoreceptor belt 120 is graded in a predetermined direction, i.e., different regions of the photoreceptor belt 120 are capable of responding to different wavelengths of light. The wavelength range and intensity of the ambient light are determined by the signals generated by the portions of the photoreceptor belt 120 with different band gaps in response to illumination, and the color temperature of the ambient light is determined.
Wherein the photosensitive belt 120 is disposed along a first direction, and a band gap of the photosensitive belt 120 monotonously changes along the first direction. That is, the band gap of the photoreceptor belt 120 changes monotonically along the length of the photoreceptor belt 120. Of course, in practical applications, the bandgap of the photoreceptor belt 120 may also be shifted non-monotonically.
The photoreceptor belt 120 may be capable of sensing at least visible light (wavelengths 480 nm-650 nm), and the photoreceptor belt 120 may be capable of sensing light of a wider range of wavelengths, for example, the photoreceptor belt 120 may be capable of sensing infrared short wave light, which has a greater effect on weak light shooting.
The photoreceptor belt 120 may be made of a continuously tunable bandgap fibrous material having a bandgap of at least 1.91eV to 2.58eV, which may be a CdSe (cadmium selenide) to CdS (cadmium sulfide) composition graded material.
For example, the elemental selenium content gradually decreases and the elemental sulfur content gradually increases along the length of the photoreceptor belt 120. The ratio of elemental selenium to elemental sulfur in the photoreceptor belt 120 is from 1: 0 gradually changes to 0: 1.
the electrode layer includes N electrodes 130, the N electrodes 130 are respectively connected to the photoreceptor belt 120, the photoreceptor belt 120 is divided into N-1 photoreceptor segments 121 by the N electrodes 130, band gaps of the photoreceptor segments 121 in the N-1 photoreceptor segments 121 are different, the photoreceptor segments 121 are used for converting optical signals of corresponding frequency bands into electrical signals, and the electrodes 130 are used for outputting the electrical signals.
Wherein N is a positive integer greater than or equal to 3. For example, the electrode layer includes 3 electrodes 130, and the photoreceptor belt 120 is divided into 2 photoreceptor segments 121. The electrode layer includes 4 electrodes 130 and the photoreceptor belt 120 is divided into 3 photoreceptor segments 121. The electrode layer comprises 5 electrodes 130 and the photoreceptor belt 120 is divided into 4 photoreceptor segments 121. The electrode layer comprises 10 electrodes 130 and the photoreceptor belt 120 is divided into 9 photoreceptor segments 121.
The plurality of electrodes 130 may be equally spaced on the photoreceptor belt 120, i.e., each photoreceptor segment 121 may have a uniform length. Or the spacing of the plurality of electrodes 130 on the photoreceptor belt 120 may be different, i.e., the length of each photoreceptor segment 121 is not uniform, which is not particularly limited by the embodiments of the present disclosure.
Any two adjacent electrodes 130 of the N electrodes 130 and the photosensitive section 121 between the two electrodes 130 form a photosensitive unit. The photosensitive section 121 senses light with a corresponding wavelength to generate an electrical signal, and when the two electrodes 130 connected to the photosensitive section 121 are connected to a signal acquisition circuit, the signal of the photosensitive section 121 is output through the signal acquisition circuit.
For example, in the embodiment of the present disclosure, the signals collected by each photosensitive segment 121 may be sequentially output in a scanning manner. For example, starting from the light sensing segment 121 at the beginning of the light sensing belt 120, the light sensing signals are sequentially output by the N-1 light sensing segments 121.
As shown in fig. 4, the collecting circuit may include a plurality of collecting units 170, and each collecting unit 170 is correspondingly connected to one electrode 130 to collect the photosensitive signal generated by the corresponding photosensitive section 121. The electrode 130 can also be connected to a ground terminal, and the electrode 130 is switched to be connected to the acquisition unit 170 or grounded through the switching circuit 160.
The switching circuit 160 is used for switching the electrode 130 to connect the acquisition unit 170 or ground. The switching circuit 160 may include a first switch 161 and a second switch 162, wherein a first end of the first switch 161 is connected to the electrode 130, a second end of the first switch 161 is connected to the collecting unit 170, a control end of the first switch 161 is connected to the collecting unit 170, and a control end of the first switch 161 is connected to the first scanning end. A first terminal of the second switch 162 is connected to the electrode 130, a second terminal of the second switch 162 is grounded, and a control terminal of the second switch 162 is connected to the second scan terminal.
Two sides of the electrode 130 are respectively provided with a photosensitive section 121, the photosensitive section 121 on one side of the electrode 130 is a first photosensitive section 121, and the photosensitive section 121 on the other side of the electrode 130 is a second photosensitive section 121. Illustratively, the first photosensitive section 121 and the second photosensitive section 121 are arranged in the scanning direction, that is, the signal of the first photosensitive section 121 is output first, and the signal of the second photosensitive section 121 is output second.
During the first period, the first photosensitive segment 121 outputs a signal, and at this time, the first switch 161 in the switching circuit 160 is turned on in response to the first scanning signal, and the electrode 130 is connected to the collecting unit 170. The second photosensitive segment 121 outputs a signal during the second period, and at this time, the second switch 162 in the switching circuit 160 is turned on in response to the second scan signal, and the electrode 130 is grounded. The active level of the second scan signal is adjacent to the active level of the first scan signal.
In operation, the photosensitive segments 121 and the acquisition units 170 form an acquisition loop, which is achieved by the switching circuit 160 connected to the electrodes 130. That is, one end of the photosensitive section 121 is grounded, and the other end of the photosensitive section 121 is connected to the pickup unit 170.
The switching circuit 160 and the collecting unit 170 may be provided to the substrate 110. A photosensitive region and an acquisition region may be included on the substrate 110, the acquisition region being adjacent to the photosensitive region, the photosensitive belt 120 being disposed in the photosensitive region, the switching circuit 160 and the acquisition unit 170 being disposed in the acquisition region, the electrode 130 extending from the photosensitive region to the acquisition region, the electrode 130 connecting the photosensitive belt 120 and the switching circuit 160. Certainly, in practical applications, the switching circuit 160 and the collecting unit 170 may also be disposed outside the substrate 110, for example, the switching circuit 160 and the collecting unit 170 may be disposed on a motherboard of an electronic device, and the embodiment of the disclosure is not limited thereto.
The collecting unit 170 may include an amplifying circuit connected to the second switch 162, and the amplifying circuit is configured to amplify the signal generated by the photosensitive section 121 and output the amplified signal. The amplified signal is used to determine the color temperature of the ambient light.
The switches in the embodiments of the present disclosure may be MOS transistors, each of which has a control terminal, a first terminal and a second terminal. Specifically, the control end of each MOS transistor may be a gate, the first end may be a source, and the second end may be a drain; or, the control terminal of each MOS transistor may be a gate, the first terminal may be a drain, and the second terminal may be a source. In addition, each MOS transistor may also be an enhancement transistor or a depletion transistor, which is not specifically limited in this example embodiment.
The electrode layer is disposed on a side of the photoreceptor belt 120 away from the substrate 110 with a gap between the electrode layer and the substrate 110, the electrode 130 intersects the photoreceptor belt 120, and the photoreceptor belt 120 and the electrode 130 are ohmically connected at the intersection of the electrode 130 and the photoreceptor belt 120.
When the electrode layer is disposed on a side of the photoreceptor belt 120 away from the substrate 110, since the photoreceptor belt 120 has a certain thickness, a gap exists between the electrode 130 and the substrate 110, and the existence of the gap causes the electrode 130 to be suspended, which may cause the electrode 130 to be broken. In order to solve this technical problem, the optical sensor 10 provided in the embodiment of the present disclosure may further include a support layer 140, where the support layer 140 is disposed on the substrate 110, and the support layer 140 fills a gap between the substrate 110 and the electrode 130, and the photosensitive belt 120 is embedded in the support layer 140.
The support layer 140 is a transparent support layer or a black support layer. The support layer 140 is a transparent support layer or a black support layer, which can prevent light from changing color through the support layer 140, thereby causing the light to be detected by the photoreceptor belt 120 with an error.
The support layer 140 may be a photoresist layer, and in order to prevent the color of the photoresist from affecting the detection result, the photoresist may be a black photoresist or a transparent photoresist. In practice, the photoreceptor belt 120 may be formed on the substrate 110, and the substrate 110 may be coated with a photoresist after the photoreceptor belt 120 is formed. And after coating the photoresist, shielding the photoresist by using a mask plate for exposure and etching, and forming a plurality of grooves on the photoresist. The grooves on the photoresist may be deposited or printed to form a plurality of electrodes 130.
It is understood that an electrode layer may also be disposed between the photoreceptor belt 120 and the substrate 110 with a gap between the photoreceptor belt 120 and the substrate 110, the electrode 130 intersecting the photoreceptor belt 120, and the photoreceptor belt 120 and the electrode 130 being ohmically connected at the intersection of the electrode 130 and the photoreceptor belt 120.
When the electrode layer is disposed between the substrate 110 and the photoreceptor belt 120, since the electrode 130 has a certain thickness, a gap exists between the photoreceptor belt 120 and the substrate 110, and the existence of the gap causes the photoreceptor belt 120 to be suspended, which may cause the risk of breaking the photoreceptor belt 120. In order to solve the technical problem, the optical sensor 10 provided by the embodiment of the present disclosure may further include a supporting layer 140, where the supporting layer 140 is disposed on the substrate 110, and the supporting layer 140 fills a gap between the substrate 110 and the electrode 130, and the electrode 130 is embedded in the supporting layer 140.
The support layer 140 is a transparent support layer 140 or a black support layer 140. The transparent support layer 140 or the black support layer 140 prevents light from changing color through the support layer 140, which may cause the photoreceptor belt 120 to detect errors in light.
The support layer 140 may be a photoresist layer, and in order to prevent the color of the photoresist from affecting the detection result, the photoresist may be a black photoresist or a transparent photoresist. In practical applications, a plurality of electrodes 130 may be formed on the substrate 110, and a photoresist may be coated on the substrate 110 after the electrodes 130 are formed. And after coating the photoresist, shielding the photoresist by using a mask plate for exposure and etching, and forming a groove on the photoresist. A photoreceptor belt 120 is formed in the recess in the photoresist.
Further, in order to avoid the influence of ambient stray light or a light source inside the electronic device 100 on the detection result of the optical sensor 10, the optical sensor 10 provided in the embodiment of the present disclosure may further include light shielding portions, the light shielding portions are disposed at two sides of the photosensitive belt 120, and the light incident from the side portions of the photosensitive belt 120 can be shielded by the light shielding portions, so that the photosensitive belt 120 only receives the light incident from the front of the optical sensor 10, and the detection accuracy of the color temperature is improved.
The electrode 130 may be a transparent electrode 130, and the transparent electrode 130 can prevent the electrode 130 from influencing the incidence of light, which is beneficial to improving the detection precision. For example, the electrode 130 may be an ITO electrode 130, an aluminum electrode 130, or a silver electrode 130, etc.
The electrode 130 may include a transfer portion 131 and a lead portion 132, the transfer portion being connected to the photoreceptor belt 120; the lead portion 132 is provided on the substrate 110, the lead portion 132 is connected to the transmission portion 131, and the lead portion 132 is exposed to the protective layer 150.
Wherein, when the switching circuit 160 and the pickup unit 170 are provided to the substrate 110, the transfer part 131 may connect the photoreceptor belt 120 and the switching circuit 160, respectively. The pin portion 132 is connected to the acquisition unit 170, and the pin portion 132 is used for outputting signals acquired by the acquisition unit 170. The transmission part 131 may be a transparent electrode 130, and the lead part 132 may be a conventional lead, for example, the lead part 132 may be a gold finger.
When the switching circuit 160 and the pickup unit 170 are disposed outside the substrate 110, the transmission part 131 is directly connected to the lead part 132. The lead portion 132 is connected to the switching circuit 160 through a flexible circuit board or the like, and the lead portion 132 is electrically connected to the switching circuit 160.
In the embodiment of the present disclosure in which the electrode 130 and the photoreceptor belt 120 are both linear or approximately linear structures, the photoreceptor belt 120 is disposed in a first direction, and the electrode 130 is disposed in a second direction, the first direction and the second direction being different. That is, the electrode 130 intersects the photoreceptor belt 120, and the electrode 130 and the photoreceptor belt 120 have an intersection. For example, the first direction and the second direction are perpendicular, i.e., the electrode 130 and the photoreceptor belt 120 are disposed perpendicular to each other.
Illustratively, the electrode 130 may be a rectangular parallelepiped electrode 130 and the photoreceptor belt 120 may be a rectangular parallelepiped photoreceptor belt 120. The length of the electrode 130 is along the second direction and the length of the photoreceptor belt 120 is along the first direction. One end of the electrode 130 in the length direction is lapped on the photoreceptor belt 120. In the disclosed embodiment, the photoreceptor belt 120 has a width of 50nm to 2000nm and a length of 5um to 1000 um. The electrode 130 extends from the photoreceptor belt 120 at least beyond the protective layer 150.
It is understood that, in the embodiment of the present disclosure, as shown in fig. 5, symmetrical electrodes 130 may be disposed on both sides of the photoreceptor belt 120, and signals of the photoreceptor belt 120 are collected by the symmetrical electrodes 130, which can increase the robustness of the sensor and further increase the detection accuracy.
It should be noted that, in the embodiment of the present disclosure, the photosensitive belt 120 may also have an arc-shaped structure, and accordingly, the appearance structure of the optical sensor 10 may also have an arc shape, which is not specifically limited in the embodiment of the present disclosure.
The passivation layer 150 is disposed on a side of the electrode layer away from the substrate 110, and the passivation layer 150 is used to protect the electrode layer and the photoreceptor belt 120. The protective layer 150 prevents impurities such as dust, moisture, etc. from entering the inside of the optical sensor 10 and prevents the electrode layer or the photoreceptor belt 120 from being scratched.
As shown in fig. 3, the protection layer 150 may include a planarization layer 151 and a water oxygen barrier film 152, the planarization layer 151 being formed on a side of the electrode 130 away from the substrate 110, the planarization layer 151 being used to form a flat surface. The water and oxygen barrier film 152 is disposed on the side of the flat slide support away from the substrate 110, and the water and oxygen barrier film 152 has a water vapor transmission rate of less than 0.1 g per square meter per day.
The water oxygen barrier film 152 may be formed on the surface of the planarization layer 151 by atomic layer deposition. During deposition, the planarization layer 151 is prevented from being damaged by too high temperature, so the temperature of atomic layer deposition needs to be controlled. For example, the temperature of the ald process is below 150 ℃. The material of the water oxygen barrier film 152 may be Al2O3、SiO2And TiO2For example, the water oxygen barrier film 152 may be Al2O3A single layer diaphragm, or the water oxygen barrier film 152 is Al2O3And SiO2The membrane with double-layer structure or the water-oxygen barrier film 152 is Al2O3、SiO2And TiO2A multilayer structure separator.
To ensure that the photoreceptor belt 120 is able to receive ambient light, a window region is provided in the protective layer 150, the light transmittance of the window region is greater than 80%, and the orthographic projection of the photoreceptor belt 120 on the protective layer 150 is located in the window region. Of course, when the protection layer 150 is made of a transparent material, the material of the window region and the region outside the window may be the same, and the embodiment of the disclosure does not limit the material of the window region to be different from the material outside the window region.
Further, the optical sensor 10 provided by the embodiment of the disclosure may further include a package housing, and the photoreceptor belt 120, the electrode layer, the support layer 140, and the protection layer 150 may be packaged in the package housing. A portion of the package case corresponding to the window region may be provided with a glass cover plate.
The optical sensor 10 provided by the embodiments of the present disclosure has a length and a width of between 1 mm and 5 mm. On one hand, the space of the components on the electronic device 100 can be saved, which is beneficial to the miniaturization and the lightness and the thinness of the electronic device 100, on the other hand, the problem of difficult assembly caused by the undersize of the optical sensor 10 is avoided, and the problem that the photosensitive belt 120 is shielded due to the assembly error is avoided.
Before the optical sensor 10 provided by the embodiment of the present disclosure works, calibration needs to be performed by a standard light source. The optical sensor 10 is used for detecting and calibrating through a standard light source, and during subsequent testing, the sensing data of the optical sensor 10 is compared with a calibration result, namely the wavelength and the light intensity distribution of the test can be sensed. For example, the calibration result may be a sensing signal-color temperature correspondence.
At calibration, the optical sensor 10 is illuminated by light of a known wavelength and intensity, and the photoreceptor belt 120 outputs a sensing signal in response to the illumination signal. The sensor signal output by the sensor is recorded, and the sensor signal comprises information such as the current, the voltage and the photosensitive section 121 responding to the illumination of the light. The sensing signal is correlated with the color temperature (determined by the wavelength and intensity of the calibration light).
The optical sensor 10 provided by the embodiment of the present disclosure, including the photosensitive belt 120 and the electrodes 130, the band gap of the photosensitive belt 120 gradually changes along the length direction, so that different portions of the photosensitive belt 120 can respond to light with different wavelengths to generate electrical signals, the electrodes 130 are connected to the photosensitive belt 120, influence the illumination at different positions of the photosensitive belt 120 to output the electrical signals generated, the sensing of light with any waveband can be realized, the waveband that the optical sensor 10 can sense is refined, the detection precision of the color temperature optical sensor 10 is favorably improved, and then the white balance adjustment precision is improved when the electronic device 100 shoots, and the imaging quality of the electronic device 100 is improved.
The exemplary embodiment of the present disclosure also provides an electronic device 100, as shown in fig. 6, the electronic device 100 includes the optical sensor 10 described above.
The optical sensor 10 includes a substrate 110, a photoreceptor belt 120 and an electrode layer, the photoreceptor belt 120 is disposed on the substrate 110, and a band gap of the photoreceptor belt 120 gradually changes along a length direction; the electrode layer comprises N electrodes 130, the N electrodes 130 are respectively connected to the photosensitive belt 120, the photosensitive belt 120 is divided into N-1 photosensitive sections 121 by the N electrodes 130, band gaps of the photosensitive sections 121 in the N-1 photosensitive sections 121 are different, the photosensitive sections 121 are used for converting optical signals of corresponding frequency bands into electric signals, and the electrodes 130 are used for outputting the electric signals; wherein N is a positive integer greater than or equal to 3.
The electronic device 100 provided by the embodiment of the present disclosure includes an optical sensor 10, in the optical sensor 10, the band gap of the photosensitive belt 120 gradually changes along the length direction, so that different portions of the photosensitive belt 120 can respond to light with different wavelengths to generate electrical signals, the plurality of electrodes 130 are connected to the photosensitive belt 120, influence the illumination at different positions of the photosensitive belt 120 to generate electrical signal output, sensing of light with any waveband can be realized, the waveband that the optical sensor 10 can sense is refined, which is beneficial to improving the detection precision of the color temperature optical sensor 10, and further, the white balance adjustment precision is improved when the electronic device 100 shoots, and the imaging quality of the electronic device 100 is improved.
Further, as shown in fig. 7, the electronic device 100 provided in the embodiment of the present disclosure further includes: and the control module 70, the control module 70 is connected with the optical sensor 10, and the control module 70 is used for determining the color temperature of the light according to the signal detected by the optical sensor 10.
The control module 70 comprises a storage unit 71 and a control unit 72, wherein the storage unit 71 stores a sensing signal-color temperature corresponding relation; the control unit 72 is connected with the optical sensor 10 and the storage unit 71, and the control unit 72 receives the sensing signal output by the optical sensor 10 and determines the color temperature of the light according to the sensing signal and the sensing signal-color temperature correspondence.
The electronic device 100 provided by the embodiment of the present disclosure may be an electronic device 100 with a shooting function, such as a mobile phone, a tablet computer, an electronic reader, a smart watch, smart glasses, a personal digital assistant, and a camera. The following describes the electronic device 100 in detail by taking the electronic device 100 as a mobile phone:
as shown in fig. 8, the electronic device 100 may further include a display 20, a bezel 30, a rear cover 60, a main board 40, a battery 50, and the like. The display screen 20 and the bezel 30 are coupled to form a front housing of the electronic device 100. The back cover 60 is coupled to the bezel 30 to form a back housing of the electronic device 100. The display screen 20, the frame 30 and the rear cover 60 form an accommodating space therein, and the main board 40 and the battery 50 are disposed in the accommodating space. The optical sensor 10 may be disposed in the accommodating space, or the optical sensor 10 may be disposed on the display screen 20 or the rear cover 60.
The display screen 20 may be a device having a display function, such as a liquid crystal display screen 20, an OLED display screen 20, a MiniLED display screen 20, an electronic ink screen, or a micro led display screen 20. A cover glass may be disposed on a side of the display screen 20 away from the middle frame, and the cover glass is used to protect the display screen 20.
When the optical sensor 10 is used for white balance adjustment of a front camera of the electronic device 100, the display screen 20 may be a hole-digging screen. That is, a light passing hole is provided on a certain area of the display screen 20, and the optical sensor 10 is provided at the light passing hole. The light passing holes on the display screen 20 may be located inside the display screen 20 or at the edges of the display screen 20.
Or the display screen 20 may be provided with a light-transmitting region, and the optical sensor 10 is disposed at the back of the light-transmitting region. The light-transmitting area is provided with a light-transmitting unit which can allow external light to pass through. For example, the pixel density of the light-transmitting region is smaller than that of the conventional display region, and light-transmitting cells are arranged in spaces between the pixel cells of the light-transmitting region.
The main board 40 is disposed in the accommodating space of the electronic device 100, and the main board 40 can be connected to the rear cover 60 or the bezel 30. The frame 30 may be provided with a connecting plate, and the connecting plate is located inside the frame 30. Mainboard 40 is connected on the connecting plate, can be provided with devices such as treater, power management circuit, all kinds of sensors and control circuit on the mainboard 40. The optical sensor 10 provided by the embodiment of the present disclosure may be powered by a power management circuit and connected to a processor, and the processor receives a signal sensed by the optical sensor 10 and determines the color temperature of the ambient light.
The battery 50 is disposed in the accommodating space of the electronic device 100, and the battery 50 may be connected to the frame 30. For example, the battery 50 may be connected to the frame 30 by a connection plate. The battery 50 is connected to the power management circuit and supplies power to the power management circuit.
The back cover 60 is coupled to the bezel 30 to form a back housing of the electronic device 100. A camera hole may be provided on the rear case of the electronic apparatus 100, and a rear camera is provided in the camera hole. The optical sensor 10 may also be provided to the rear cover 60.
The rear cover 60 may be provided with a lens decoration plate 61, the lens decoration plate 61 is provided with a lens hole and a sensing hole, the lens hole is used for installing a camera, and the sensing hole is used for installing the optical sensor 10. The lens decorative plate 61 may further be provided with a lens cover plate, and the lens cover plate covers the lens hole and the sensor hole. The lens cover plate may be a transparent cover plate, or the lens cover plate may be an electrochromic plate or the like.
For example, the lens decoration plate 61 may be rectangular, the optical sensor 10 may be disposed at an edge of the lens decoration plate 61, and the optical sensor 10 and the edge of the lens decoration plate 61 are parallel. Alternatively, the lens decoration plate 61 may be circular, and in this case, the optical sensor 10 may also be in a circular arc structure, which is not limited in the embodiment of the present disclosure.
The control module 70 is arranged on the main board 40, the control module 70 comprises a storage unit 71 and a control unit 72, and the storage unit 71 stores a sensing signal-color temperature corresponding relation; the control unit 72 is connected with the optical sensor 10 and the storage unit 71, and the control unit 72 receives the sensing signal output by the optical sensor 10 and determines the color temperature of the light according to the sensing signal and the sensing signal-color temperature correspondence.
The control unit 72 may be a Central Processing Unit (CPU), a Microprocessor (MCU), or the like, and the storage unit 71 may be a memory card, a memory disk, or the like. The corresponding relationship between the sensing signal and the color temperature can be obtained by calibrating the sensor, and the corresponding relationship between the sensing signal and the color temperature can be stored in the storage unit 71 in a table or a function manner. When determining the color temperature, the processing unit calls the correspondence from the storage unit 71.
At calibration, the optical sensor 10 is illuminated by light of a known wavelength and intensity, and the photoreceptor belt 120 outputs a sensing signal in response to the illumination signal. The sensor signal output by the sensor is recorded, and the sensor signal comprises information such as the current, the voltage and the photosensitive section 121 responding to the illumination of the light. The sensing signal is correlated with the color temperature (determined by the wavelength and intensity of the calibration light).
The electronic device 100 provided by the embodiment of the present disclosure includes an optical sensor 10, in the optical sensor 10, the band gap of the photosensitive belt 120 gradually changes along the length direction, so that different portions of the photosensitive belt 120 can respond to light with different wavelengths to generate electrical signals, the plurality of electrodes 130 are connected to the photosensitive belt 120, influence the illumination at different positions of the photosensitive belt 120 to generate electrical signal output, sensing of light with any waveband can be realized, the waveband that the optical sensor 10 can sense is refined, which is beneficial to improving the detection precision of the color temperature optical sensor 10, and further, the white balance adjustment precision is improved when the electronic device 100 shoots, and the imaging quality of the electronic device 100 is improved.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (10)
1. An optical sensor, characterized in that the optical sensor comprises:
a substrate;
the photosensitive belt is arranged on the substrate;
the electrode layer comprises N electrodes, the N electrodes are respectively connected to the photosensitive belt, the photosensitive belt is divided into N-1 photosensitive sections by the N electrodes, band gaps of the photosensitive sections in the N-1 photosensitive sections are different, the photosensitive sections are used for converting optical signals of corresponding frequency bands into electric signals, and the electrodes are used for outputting the electric signals;
wherein N is a positive integer greater than or equal to 3.
2. The optical sensor of claim 1, wherein the photoreceptor belt is disposed in a first direction, the band gap of the photoreceptor belt varies monotonically in the first direction, and the electrode is disposed in a second direction, the first direction and the second direction being different.
3. The optical sensor of claim 1, wherein the electrode layer is disposed on a side of the photoreceptor belt remote from the substrate, and a gap is provided between the electrode layer and the substrate;
the optical sensor further includes:
the supporting layer is arranged on the substrate, the supporting layer is filled in a gap between the substrate and the electrode, and the photosensitive belt is embedded in the supporting layer.
4. The optical sensor of claim 3, wherein the support layer is a transparent support layer or a black support layer.
5. The optical sensor of claim 1, wherein the optical sensor further comprises:
the protective layer is arranged on one side, far away from the substrate, of the electrode layer and used for protecting the electrode layer and the photosensitive belt.
6. The optical sensor of claim 5, wherein the protective layer comprises:
the water and oxygen barrier film is arranged on one side, far away from the substrate, of the electrode layer, and the water vapor transmittance of the water and oxygen barrier film is less than 0.1 gram per square meter per day.
7. The optical sensor of claim 6, wherein the protective layer has a window region disposed thereon, the window region having a light transmittance of greater than 80%, the window region being located where an orthographic projection of the photoreceptor belt onto the protective layer is located.
8. The optical sensor of claim 5, wherein the electrode comprises:
a transfer section connected to the photosensitive belt;
the pin part is arranged on the substrate, the pin part is connected with the transmission part, and the pin part is exposed out of the protective layer.
9. An electronic device, characterized in that the electronic device comprises an optical sensor according to any of claims 1-8.
10. The electronic device of claim 9, wherein the electronic device further comprises:
the control module group, the control module group with optical sensor connects, the control module group is used for according to the signal that optical sensor detected confirms the colour temperature of light.
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| CN202111108927.3A CN113899458A (en) | 2021-09-22 | 2021-09-22 | Optical sensor and electronic device |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87107592A (en) * | 1986-09-26 | 1988-10-12 | 佳能株式会社 | Semiconductor device with a continuous gradation gap semiconductor zone |
| CN101882640A (en) * | 2010-06-28 | 2010-11-10 | 普尼太阳能(杭州)有限公司 | CuInSe2-based thin film solar cell |
| CN102376723A (en) * | 2010-08-20 | 2012-03-14 | 三星电子株式会社 | Sensor array substrate, display device including the same, and method of manufacturing the sensor array substrate |
| CN104143586A (en) * | 2014-07-10 | 2014-11-12 | 北京理工大学 | Method for manufacturing photoelectric detector based on integrated chip with alloy semiconductor nano-structure |
| CN107946338A (en) * | 2017-08-17 | 2018-04-20 | 深圳信炜科技有限公司 | Display module and electronic equipment |
| CN107958195A (en) * | 2017-08-17 | 2018-04-24 | 深圳信炜科技有限公司 | Photoelectric sensor device and electronic equipment |
| CN108073911A (en) * | 2017-12-30 | 2018-05-25 | 深圳信炜科技有限公司 | Photosensitive device, photosensitive module, display module and electronic equipment |
| WO2019033348A1 (en) * | 2017-08-17 | 2019-02-21 | 深圳信炜科技有限公司 | Display module and electronic device |
| CN110095507A (en) * | 2019-04-08 | 2019-08-06 | 北京理工大学 | Electronic sensor based on polyimide coating semiconductor nanowires substrate |
| CN111756969A (en) * | 2020-06-16 | 2020-10-09 | RealMe重庆移动通信有限公司 | Optical module and electronic equipment |
| CN112147828A (en) * | 2020-09-04 | 2020-12-29 | Oppo广东移动通信有限公司 | Electronic equipment, shell assembly, cover plate assembly and electrochromic module |
-
2021
- 2021-09-22 CN CN202111108927.3A patent/CN113899458A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87107592A (en) * | 1986-09-26 | 1988-10-12 | 佳能株式会社 | Semiconductor device with a continuous gradation gap semiconductor zone |
| CN101882640A (en) * | 2010-06-28 | 2010-11-10 | 普尼太阳能(杭州)有限公司 | CuInSe2-based thin film solar cell |
| CN102376723A (en) * | 2010-08-20 | 2012-03-14 | 三星电子株式会社 | Sensor array substrate, display device including the same, and method of manufacturing the sensor array substrate |
| CN104143586A (en) * | 2014-07-10 | 2014-11-12 | 北京理工大学 | Method for manufacturing photoelectric detector based on integrated chip with alloy semiconductor nano-structure |
| CN107946338A (en) * | 2017-08-17 | 2018-04-20 | 深圳信炜科技有限公司 | Display module and electronic equipment |
| CN107958195A (en) * | 2017-08-17 | 2018-04-24 | 深圳信炜科技有限公司 | Photoelectric sensor device and electronic equipment |
| WO2019033348A1 (en) * | 2017-08-17 | 2019-02-21 | 深圳信炜科技有限公司 | Display module and electronic device |
| CN108073911A (en) * | 2017-12-30 | 2018-05-25 | 深圳信炜科技有限公司 | Photosensitive device, photosensitive module, display module and electronic equipment |
| CN110095507A (en) * | 2019-04-08 | 2019-08-06 | 北京理工大学 | Electronic sensor based on polyimide coating semiconductor nanowires substrate |
| CN111756969A (en) * | 2020-06-16 | 2020-10-09 | RealMe重庆移动通信有限公司 | Optical module and electronic equipment |
| CN112147828A (en) * | 2020-09-04 | 2020-12-29 | Oppo广东移动通信有限公司 | Electronic equipment, shell assembly, cover plate assembly and electrochromic module |
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