CN107958195A - Photoelectric sensor device and electronic equipment - Google Patents
Photoelectric sensor device and electronic equipment Download PDFInfo
- Publication number
- CN107958195A CN107958195A CN201710709054.9A CN201710709054A CN107958195A CN 107958195 A CN107958195 A CN 107958195A CN 201710709054 A CN201710709054 A CN 201710709054A CN 107958195 A CN107958195 A CN 107958195A
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- Prior art keywords
- sensor device
- photoelectric sensor
- photosensitive
- nude film
- forming component
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
Abstract
The present invention discloses a kind of photoelectric sensor device and electronic equipment, which includes photosensitive nude film, and photosensitive nude film includes multiple photosensitive pixels.The photosensitive nude film is equipped with anti-aliasing image-forming component, and aliasing occurs for the optical signal that the anti-aliasing image-forming component is used to prevent from receiving between photosensitive pixel adjacent in the photosensitive nude film.Electronic equipment includes the photoelectric sensor device.
Description
Technical field
The present invention relates to photoelectric sensing field, more particularly to a kind of photoelectric sensor device and electronic equipment.
Background technology
At present, biometric information sensor, especially fingerprint Identification sensor, have been increasingly becoming the electronic products such as mobile terminal
Standard configuration component.Since optical fingerprint identification sensor specific capacitance formula fingerprint Identification sensor has stronger penetration capacity,
Therefore it has been proposed that a kind of optical fingerprint applied to mobile terminal identifies module.As shown in Figure 1, the optical fingerprint identifies
Module includes optical fingerprint sensor 400 and light source 402.Wherein, which is arranged at mobile terminal
The lower section of cover sheet 401.The side that the light source 402 closes on the optical fingerprint identification sensor 400 is set.When the hand of user
When referring to F contact protection cover boards 401, the optical signal that light source 402 is sent through cover sheet 401 and reaches finger F, by finger F
Valley and a ridge reflection after, received by optical fingerprint identification sensor 400, and form the fingerprint image of finger F.
So, above-mentioned optical fingerprint identification module can not obtain clearly image, still have much room for improvement.
The content of the invention
Embodiment of the present invention is intended at least solve one of technical problem existing in the prior art.For this reason, the present invention is real
The mode of applying needs to provide a kind of photoelectric sensor device and electronic equipment.
A kind of photoelectric sensor device of embodiment of the present invention, including photosensitive nude film, the photosensitive nude film include multiple senses
Light pixel；The photosensitive nude film is equipped with anti-aliasing image-forming component, and the anti-aliasing image-forming component is used to prevent described photosensitive naked
Aliasing occurs for the optical signal received in piece between adjacent photosensitive pixel.
Embodiment of the present invention on photosensitive nude film by setting anti-aliasing image-forming component so that between adjacent photosensitive pixel
Aliasing will not occur for the optical signal received, therefore the image obtained after execution light sensing is more visible, so as to improve sensing essence
Degree.
In some embodiments, on side of the anti-aliasing image-forming component away from the photosensitive nude film or the sense
Filter coating is equipped between nude and the anti-aliasing image-forming component, the filter coating is used for the optical signal beyond default wave band
Filtering.
In some embodiments, the default wave band is blueness, the corresponding wave band of green light signal.
Pass through the setting of filter coating so that the interference signal in ambient light can effective filter out, so as to improve sensing essence
Degree.
In some embodiments, the anti-aliasing image-forming component include extinction wall and by extinction walled into it is multiple
Light region.
In some embodiments, the transmission region is uniformly distributed.Equally distributed transmission region cause it is anti-aliasing into
The preparation process of element is simpler.
In some embodiments, the extinction wall includes the extinction block and keel of multiple alternately laminated settings.Due to
The thickness of the thickness ratio extinction wall of each extinction block is small, thus etching formed transmission region technique it is opposite be easier to, so make
The technique for obtaining anti-aliasing image-forming component is easier to, and also ensures the light transmission of transmission region.In addition, by keel with
Extinction block is stacked to form extinction wall, accelerates the processing procedure of anti-aliasing image-forming component, and ensure that anti-aliasing image-forming component
Anti-aliasing effect.
In some embodiments, the keel is made of transparent material.
In some embodiments, filling transparent material in the transmission region.By filling transparent material in transmission region
Material, not only increases the intensity of anti-aliasing image-forming component, can also avoid impurity from entering in transmission region and influence translucent effect.
In certain embodiments kind, the anti-aliasing image-forming component includes the light-absorption layer of the alternately laminated setting of multilayer and transparent
Supporting layer；The light-absorption layer includes multiple spaced extinction blocks；The clear support layer is filled by transparent material to be formed, and
The interval between the extinction block is filled in the lump；It is wherein described to be spaced corresponding region formation transmission region.
In some embodiments, the thickness of each layer of clear support layer is unequal.
In some embodiments, the thickness of the clear support layer successively increases.
By being set to the thickness of clear support layer, avoid and deviate predetermined angle scope relative to photosensitive nude film vertical direction
Outer optical signal passes through anti-aliasing image-forming component, so as to improve the anti-aliasing effect of anti-aliasing image-forming component.
In some embodiments, the anti-aliasing image-forming component is formed directly on the photosensitive panel, alternatively, described
After anti-aliasing image-forming component is separately made, then it is arranged on the photosensitive nude film.
In some embodiments, the photoelectric sensor device further includes a packaging body, and the packaging body is used for by described in
Anti-aliasing image-forming component and filter coating above photosensitive nude film and the photosensitive nude film are packaged.
In some embodiments, the photosensitive nude film includes a substrate, and the photosensitive pixel is in array distribution in described
On substrate.
In some embodiments, the photosensitive pixel includes an at least sensor devices, and the sensor devices are used to receive
Optical signal, and the optical signal received is converted into corresponding electric signal.
In some embodiments, the sensor devices include one in photodiode, light resistance, phototriode
It is or multiple.
In some embodiments, the scan line being electrically connected with the photosensitive pixel is equipped between adjacent photosensitive pixel
Group and data line group.
In some embodiments, the photoelectric sensor device further comprises driving the photosensitive pixel to perform light sensing
Drive circuit, and the drive circuit correspond to be connected with the scanline groups, for providing corresponding drive signal, and pass through
The scanline groups are transferred to the photosensitive pixel.
In some embodiments, the drive circuit is formed over the substrate.
In some embodiments, the photoelectric sensor device further comprises signal processing circuit, the signal processing
Circuit performs light sensing according to the photosensitive pixel and the electric signal that produces obtains the biological information of target object.
In some embodiments, the photoelectric sensor device further comprises controller, and the controller is used to control
The drive circuit exports corresponding drive signal, and the control signal processing circuit receives the photosensitive pixel output
Electric signal.
In some embodiments, the signal processing circuit and controller may be contained within the substrate, Huo Zhesuo
Signal processing circuit and controller is stated to be electrically connected by flexible PCB and the photosensitive nude film.
In some embodiments, the photoelectric sensor device is fingerprint sensing device.
In some embodiments, the photoelectric sensor device is sensitive chip, for sensing biological information.
In some embodiments, the photoelectric sensor device further includes a packaging body, and the packaging body is used for by described in
Anti-aliasing image-forming component above photosensitive nude film and the photosensitive nude film is packaged.
The a kind of electronic equipment of embodiment of the present invention, includes the photoelectric sensor device of any of the above-described embodiment.
Since the electronic equipment has the photoelectric sensor device of any of the above-described embodiment, there is photoelectric sensing dress
Put all beneficial effects having.In addition, the photoelectric sensor device may be disposed at below the display screen of electronic equipment, not only realize
Front obtains the biological information of target object from electronic equipment, so that the positive screen accounting of electronic equipment can
With sufficiently large, the direction for being conducive to electronic equipment towards full screen display is developed.
The additional aspect and advantage of embodiment of the present invention will be set forth in part in the description, partly by from following
Become obvious in description, or recognize by the practice of embodiment of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of embodiment of the present invention retouch embodiment from reference to accompanying drawings below
It will be apparent and be readily appreciated that in stating, wherein：
Fig. 1 is a kind of schematic diagram of optical imagery sensing structure applied to electronic equipment of the prior art；
Fig. 2 is the positive structure schematic using one embodiment of electronic equipment of photoelectric sensor device of the present invention；
Fig. 3 is cross-sectional view of the electronic equipment along I-I lines in Fig. 2, wherein illustrate only the portion of electronic equipment
Separation structure；
Fig. 4 is the partial structural diagram of the photoelectric sensor device of an embodiment of the present invention；
Fig. 5 is the optical signal that the anti-aliasing image-forming component of an embodiment in photoelectric sensor device shown in Fig. 4 can pass through
Scope schematic diagram；
Fig. 6 is the partial structural diagram of the anti-aliasing image-forming component of an embodiment of the present invention；
Fig. 7 is the partial structural diagram of the anti-aliasing image-forming component of another embodiment of the present invention；
Fig. 8 is the preparation process schematic diagram of the anti-aliasing image-forming component shown in Fig. 6；
Fig. 9 is the partial structural diagram of the anti-aliasing image-forming component of a further embodiment of this invention；
Figure 10 is the partial structural diagram of the photoelectric sensor device of another embodiment of the present invention；
Figure 11 is the structure diagram of the photoelectric sensor device of a further embodiment of this invention.
Figure 12 is the partial structural diagram of the photosensitive nude film of an embodiment of the present invention；
Figure 13 is the structure diagram of the photoelectric sensor device of a further embodiment of this invention；
Figure 14 is the electrical block diagram of the photosensitive pixel of an embodiment of the present invention；
Figure 15 is the electrical block diagram of the photosensitive pixel of another embodiment of the present invention.
Figure 16 is the structure diagram of the display screen of an embodiment of the present invention；
Figure 17 be an embodiment of the present invention display screen in display pixel and photoelectric sensor device sensor devices phase
To position relationship schematic diagram；
Figure 18 is the positive structure schematic using another embodiment of electronic equipment of photoelectric sensor device of the present invention.
Embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element is represented to same or similar label eventually or there is same or like element.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that term " first ", " second " are only used for description purpose, and cannot
It is interpreted as indicating or implies relative importance or imply the quantity of the technical characteristic indicated by indicating.Thus, define " the
One ", one or more feature can be expressed or be implicitly included to the feature of " second ".In description of the invention
In, " multiple " are meant that two or more, unless otherwise specifically defined." contact " or " touch " includes direct
Contact or mediate contact.For example, the photoelectric sensor device hereinafter disclosed, it is arranged on the inside of electronic equipment, such as aobvious
The lower section of display screen, then user's finger pass through cover sheet and the display screen mediate contact photoelectric sensor device.
In the description of the present invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection or can be in communication with each other；It can be directly connected, can also be by between intermediary
Connect connected, can be the interaction relationship of connection inside two elements or two elements.For the ordinary skill of this area
For personnel, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.In order to
Simplify disclosure of the invention, hereinafter to the components of specific examples and be set for describing.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relation.In addition, the present invention provides various specific techniques and material examples, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
Further, described feature, structure can be incorporated in one or more embodiment party in any suitable manner
In formula.In the following description, there is provided many details fully understand embodiments of the present invention so as to provide.So
And one of ordinary skill in the art would recognize that, without one or more in the specific detail, or using other structures,
Constituent element etc., can also put into practice technical scheme.In other cases, it is not shown in detail or describes known features or behaviour
Make to avoid the fuzzy present invention.
Embodiment of the present invention proposes a kind of photoelectric sensor device being arranged in electronic equipment, and the display screen is for example but not
Being limited to OLED display panel etc. has the display device for sending optical signal.During electronic device works, display screen sends optical signal, with
Realize corresponding display effect.At this time, if there is target object to touch the electronic equipment, the optical signal that display screen is sent reaches target
Reflected after object, the optical signal reflected is received by photoelectric sensor device, and photoelectric sensor device believes the light received
Number be converted to electric signal corresponding with optical signal.The electric signal produced according to the photoelectric sensor device, can obtain target object
Predetermined biological information.
Above-mentioned electronic equipment for example but be not limited to consumption electronic products, household formula electronic product, vehicular electronics production
The electronic product of the suitable types such as product, financial terminal product.Wherein, consumption electronic products are as being mobile phone, tablet computer, notes
This computer, tabletop display, computer all-in-one machine etc..Household formula electronic product is as intelligent door lock, TV, refrigerator, wearable set
It is standby etc..Vehicular electronic product is such as automatic navigator, vehicle-carrying DVD.Financial terminal product is as ATM machine, self-service handled industry
Terminal of business etc..Following embodiments are described by taking the mobile terminal of cell phone type as an example, but as it was previously stated, following embodiment
It is equally applicable to other suitable electronic products, it is not limited to the mobile terminal of cell phone type.
The predetermined biological information of above-mentioned target object (or is：Image information) it is such as, but not limited to fingerprint, palmmprint, ear
The skin lines information such as line, sole, and other suitable biological informations such as heart rate, blood oxygen concentration, vein, artery.Should
Predetermined biological information can be any one or a few in the information of aforementioned list.The target object is such as, but not limited to people
Body, or the organism of other suitable types.
It refer to Fig. 2 and Fig. 3, Fig. 2 show one embodiment of electronic equipment for applying photoelectric sensor device of the present invention
Facad structure, Fig. 3 shows cross-section structure of the electronic equipment along I-I lines in Fig. 2, and Fig. 3 illustrate only electronic equipment
Part-structure.The photoelectric sensor device 20 of embodiment of the present invention is applied to a mobile terminal 100, the mobile terminal 100
Front is equipped with a display screen 10, which is equipped with cover sheet 30.Alternatively, the screen accounting of the display screen 10 compared with
It is more than height, such as 80%.Screen accounting refers to that the display area S1 of display screen 10 accounts for the ratio of the front surface region of mobile terminal 100.
The photoelectric sensor device 20 is correspondingly arranged at the lower section of the display screen 10, the partial zones of the display area S1 of the corresponding display screen 10
Domain is set.The region for defining positive correspondence or the face photoelectric sensor device 20 of the mobile terminal 100 is sensing area S2.The light
Electrical sensor apparatus 20 is used to sense contact or the predetermined biological information close to the target object above sensing area S2.Can be with
Understand, which can also be arranged at the lower section of cover sheet 30, and positioned at the positive non-of mobile terminal 100
Display area.
Sensing area S2 can be any position on viewing area.For example, sensing area S2 corresponds to the display of the display screen 10
Set in area at lower position.It is to be understood that sensing area S2 correspond in the display screen 10 set at lower position be for
The user is facilitated to be operated.For example, when user's hand-held mobile terminal 100, the thumb of user can conveniently touch the sensing
The position of area S2.Certainly, sensing area S2 can also be positioned over the convenient other suitable positions touched of user.
When mobile terminal 100 is in bright screen state and is in biological information sensing modes, which sends
Optical signal.When an object contacts or during close to sensing area S2, which receives what is reflected by the object
Light, changes the light received as corresponding electric signal, and the predetermined biological characteristic letter of the object is obtained according to the electric signal
Breath, for example, information in fingerprint.So as to which, the photoelectric sensor device 20 can be realized to contact or close to the part above viewing area
The target object in region is sensed.
Fig. 4 is refer to, Fig. 4 shows the partial structurtes of the photoelectric sensor device 20 of an embodiment of the present invention.The photoelectricity
Sensing device 20 includes a photosensitive nude film 24, and the photosensitive nude film 24 includes multiple photosensitive pixels 22.Photosensitive pixel 22 is used to connect
The optical signal that top is come is received, and the optical signal received is converted into corresponding electric signal.The photosensitive nude film 24 is equipped with anti-mixed
Element 28 is built up, the optical signal that anti-aliasing image-forming component 28 is used to prevent from receiving between adjacent photosensitive pixel 22 occurs mixed
It is folded.
Since reflection of the target object different parts to optical signal has differences, and the out-of-flatness of target object surface,
Some positions of target object are contacted with cover sheet 30 (see Fig. 3), some positions are with cover sheet 30 not in contact with so as to cause to connect
Diffusing reflection occurs for tactile position, not in contact with position occur mirror-reflection, therefore sensed between adjacent photosensitive pixel 22
Optical signal can be there are aliasing, so that the sensing image for causing to obtain obscures.In this regard, embodiment of the present invention is on photosensitive nude film 24
One anti-aliasing image-forming component 28 is set, therefore the image obtained after the execution light sensing of photosensitive pixel 22 is more visible, so as to improve
The sensing precision of photoelectric sensor device 20.
In some embodiments, anti-aliasing image-forming component 28 has extinction characteristic, is irradiated to anti-aliasing image-forming component 28
On optical signal in, only could pass through anti-aliasing image-forming component 28 and quilt with the photosensitive 24 approximately perpendicular optical signal of nude film
Photosensitive pixel 22 receives, remaining optical signal is then absorbed by anti-aliasing image-forming component 28.In this way, it can prevent adjacent photosensitive
The optical signal received between pixel 22 produces aliasing.It should be noted that include with photosensitive 24 approximately perpendicular optical signal of nude film
Predetermined angle scope is deviated perpendicular to the optical signal of the photosensitive nude film 24, and relative to the vertical direction of the photosensitive nude film 24
Interior optical signal.The predetermined angle scope is in ± 20 °.
Specifically, which includes extinction wall 281 and the multiple transparent areas enclosed by extinction wall 281
Domain 282.Extinction wall 281 is formed by light absorbent.The light absorbent includes metal oxide, charcoal blacking, black ink etc..Its
In, the metal in metal oxide is such as, but not limited to chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), molybdenum
(Mo) one or more.The extending direction of transmission region 282 is the direction vertical with photosensitive nude film 24, so as to be irradiated to anti-mixed
, can be to pass through transmission region with the optical signal on photosensitive 24 approximately perpendicular direction of nude film in the optical signal for building up element 28
282, remaining optical signal is then absorbed by extinction wall 281.
In some embodiments, as shown in figure 5, Fig. 5 shows the optical signal scope through anti-aliasing image-forming component 28.
Due to the extinction characteristic of anti-aliasing image-forming component 28, the optical signal between only optical signal L1 and optical signal L2 can pass through printing opacity
Region 282 reaches photosensitive pixel 22, remaining optical signal is absorbed by the extinction wall 281 of anti-aliasing image-forming component 28.Can by Fig. 5
Know, the cross-sectional area of transmission region 282 is smaller, and the scope by the angle [alpha] of the optical signal of transmission region 282 is smaller, therefore anti-
The anti-aliasing effect of aliasing image-forming component 28 is better.In this way, the printing opacity of the relatively small area set by anti-aliasing image-forming component 28
Region 282, can improve the anti-aliasing effect of anti-aliasing image-forming component 28.Further, since the transparent area of anti-aliasing image-forming component 28
The cross-sectional area in domain 282 is smaller, therefore each photosensitive pixel 22 will correspond to multiple transmission regions 282, so that photosensitive pixel
22 can sense enough optical signals, improve the sensing precision of photoelectric sensor device 20.
Further, Fig. 6 is refer to, Fig. 6 shows the structure of the anti-aliasing image-forming component 28 of an embodiment of the present invention.
Extinction wall 281 is sandwich construction, and the extinction wall includes the extinction block 281a and keel 281b of alternately laminated setting.One implements
In mode, extinction block 281a is formed by light absorbent.The light absorbent be such as, but not limited to metal oxide, charcoal blacking,
Black ink etc..Wherein, the metal in metal oxide is such as, but not limited to chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten
(W), titanium (Ti), the one or more of molybdenum (Mo).Keel 281b is such as, but not limited to the hyaline layer formed by transparent material, example
Such as trnaslucent materials, light absorbent.
In some embodiments, multiple extinction block 281a positioned at same layer are arranged at intervals, and are respectively inhaled in the same layer
The region corresponding to interval between light block 281a is transmission region 282.Further, multiple extinction block 281a of same layer with
And multiple keel 281b can once be made.Specifically, by providing a mask, the diaphragm that the mask is integrally formed,
And the diaphragm corresponds to the position formation perforate of extinction block 281a, and the shape of the perforate and size and the shape of extinction block 283 are big
It is small consistent.By the mask, evaporation forms the extinction block 281a and keel 281b that are arranged alternately on a carrier successively,
So as to form anti-aliasing image-forming component 28.
By the setting of keel 281b, the processing procedure of anti-aliasing image-forming component 28 is not only accelerated, and passes through keel
The height of 281b is set, and can guarantee that the anti-aliasing effect of anti-aliasing image-forming component 28.
In some embodiments, transparent material can be filled in above-mentioned transmission region 282, to increase anti-aliasing imaging
The intensity of element layer, can also avoid impurity from entering in transmission region 282 and influence translucent effect.In order to ensure transmission region 282
Translucent effect, transparent material can select the larger material of light transmittance, such as glass, PMMA (acrylic), PC (poly- carbonic acid
Ester) etc..
In some embodiments, Fig. 7 is refer to, Fig. 7 shows the anti-aliasing into pixel of another embodiment of the present invention
The structure of part.The anti-aliasing image-forming component 28 is sandwich construction, and the anti-aliasing image-forming component 28 includes alternately laminated setting
Light-absorption layer 283 and clear support layer 284；The light-absorption layer 283 includes multiple spaced extinction block 283a；The transparent branch
Support layer 284 is filled by transparent material to be formed, and fills the interval 283b between the extinction block 283a in the lump；Wherein described interval
The corresponding regions of 283b form the transmission region 282.
Further, Fig. 8 is refer to, Fig. 8 shows the preparation of the anti-aliasing image-forming component of an embodiment of the present invention
Journey.Specifically, when preparing anti-aliasing image-forming component 28, one layer of light absorbent is first coated on a carrier, and in extinction material
282 corresponding partial etching of transmission region is fallen on the bed of material, part is not etched and forms multiple extinction block 283a.The etching skill
Art is such as, but not limited to photoengraving, X-ray etching, electron beam lithography and ion beam etching.And etching type may include to do
Method etches and two kinds of wet etching.Then, transparent material layer, and the transparent material are coated on extinction block 283 after the etching
Multiple extinction block 283a are not only covered, the interval 283b between multiple extinction block 283a are also filled in the lump, so as to form transparent branch
Support layer 284.Then, multiple extinction block 283a are formed in clear support layer 284 according to the generation type of light-absorption layer 283, successively
Analogize to form the alternately stacked light-absorption layer 283 of multilayer and clear support layer 284, so as to form anti-aliasing image-forming component 28.
Further, in order to ensure the translucent effect of transmission region 282, the transparent material for forming clear support layer 284 can
To select the larger material of light transmittance, such as glass, PMMA (acrylic), PC (makrolon), epoxy resin etc..
In some embodiments, Fig. 9 is refer to, Fig. 9 shows the anti-aliasing into pixel of another embodiment of the present invention
The structure of part.The anti-aliasing image-forming component 28 includes the light-absorption layer 283 and clear support layer 284 of alternately laminated setting, and every layer
The thickness of clear support layer 284 is unequal.That is the value of thickness h 1, h2 and h3 is unequal in Fig. 7.Alternatively, the clear support layer
284 thickness successively increases, i.e. h1<h2<h3.It can so be deviated to avoid relative to photosensitive 24 vertical direction of nude film beyond ± 20 °
Clear support layer 284 of the optical signal through extinction block 283a, so as to improve the sensing precision of photoelectric sensor device 20.
, can be into it should be noted that the thickness parameter of every layer of clear support layer 284, and the width and height parameter of extinction block 283a
The different setting of row and a variety of setting combinations, to improve the sensing precision of photoelectric sensor device 20.
In some embodiments, anti-aliasing image-forming component 28 is formed directly on photosensitive nude film 24, i.e., above-mentioned anti-aliasing
The carrier during formation of image-forming component 28 is the photosensitive nude film 24 equipped with photosensitive pixel 22.So, ground, the anti-aliasing imaging are changed
Element 28 is arranged on the photosensitive nude film 24 equipped with photosensitive pixel 22 again after being for example separately made, so as to accelerate photoelectric sensing dress
Put 20 processing procedure.
In some embodiments, multiple transmission regions 282 are uniformly distributed in anti-aliasing image-forming component 28, so that anti-
The preparation process of aliasing image-forming component 28 is simpler.Moreover, the anti-aliasing image-forming component 28 may be, for example, integrally formed film,
Fitted in again after being separately made on photosensitive nude film 24, so as to accelerate the processing procedure of photoelectric sensor device 20.
In some embodiments, by taking target object is finger as an example, when finger is located at cover sheet 30, if there is environment
Light is irradiated on finger, and finger has many institutional frameworks, such as epidermis, bone, meat, blood vessel etc., therefore in ambient light
Part optical signals can penetrate finger, and part optical signals are then by finger.The optical signal of finger is penetrated by the guarantor below finger
Protecting cover plate 30 transmits and reaches photoelectric sensor device 20, and photoelectric sensor device 20 is not only sensed at this time is reflected back through target object
The optical signal come, also senses the optical signal that ambient light penetrates finger, can not so be sensed exactly.Therefore, in order to keep away
Exempting from ambient light influences biological information sensing of the photoelectric sensor device 20 to target object, and as shown in Figure 10, Figure 10 is shown
The structure of the photoelectric sensor device 20 of another embodiment of the present invention.The photosensitive nude film 24 is equipped with filter coating 23, i.e. filter coating
23 are arranged between photosensitive nude film 24 and anti-aliasing image-forming component 28.The filter coating 23 is used for the optical signal beyond default wave band
Filtered.In present embodiment, the optical signal beyond the default wave band is the interference signal that ambient light is formed, i.e., in ambient light
The optical signal of finger can be penetrated.By the filter coating 23, the interference signal that will reflect back into the optical signal come filters out, so as to improve
The sensing precision of photoelectric sensor device 20.So, ground is changed, which can also be arranged at anti-aliasing image-forming component 28
On, i.e., filter coating 23 is arranged on side of the anti-aliasing image-forming component 28 away from photosensitive nude film 24.
In some embodiments, it is that the light in ambient light compared with long-wave band is believed to preset the optical signal beyond the optical signal of wave band
Number, because the optical signal compared with long-wave band can penetrate target object, and the optical signal compared with short-wave band is then absorbed by target object.Cause
This just penetrates the optical signal of finger, reaches by being filtered out to the optical signal in ambient light compared with long-wave band in energy filtering environmental light
To the purpose for the interference signal for eliminating ambient light.
In some embodiments, it is the corresponding wave band of blue light signal to preset wave band, i.e. filter coating 23 believes blue light
Optical signal beyond number filters out.
In some embodiments, it is the corresponding wave band of green light signal to preset wave band, i.e. filter coating 23 believes green light
Optical signal beyond number filters out.
In the red light signal of ambient light, blue light signal and green light signal, the target object such as finger is to red
The absorption of optical signal is most weak, secondly green light signal, the absorption to blue light signal is most strong.I.e. ambient light is irradiated in finger
On, substantial amounts of blue light signal is only a small amount of by finger, and finger is penetrated even without blue light signal.Therefore, select
Blue light signal or green light signal are filtered with the optical signal of wave section, can eliminate the interference of ambient light significantly, are improved
The sensing precision of photoelectric sensor device 20.
In some embodiments, the photoelectric sensor device 20 is a sensitive chip, for sensing biological information.
In some embodiments, Figure 11 is refer to, Figure 11 shows the photoelectric sensing dress of a further embodiment of this invention
Put 20 structure.In some embodiments, the photoelectric sensor device 20 further comprises a packaging body 30, the packaging body
For all devices of the photosensitive nude film 24 and the top of the photosensitive nude film 24 to be packaged, for example, it is anti-aliasing into pixel
Part 28 and filter coating 23 are packaged.In particular, when anti-aliasing image-forming component 28 is located at 23 top of filter coating, the encapsulation
Body can fill transmission region 282 in the lump.
Figure 12 is refer to, Figure 12 shows the structure of the photosensitive nude film of an embodiment.The photosensitive nude film (Die) 24 is one
Semiconductor device, it further comprises a substrate 26, and the plurality of photosensitive pixel 22 is formed on the substrate 26.Separately
Outside, the scanline groups and data line group being electrically connected with photosensitive pixel 22 are for example also formed with the substrate 26, scanline groups are used
In transmission scanning drive signal to photosensitive pixel 22, light sensing is performed to activate photosensitive pixel 22, data line group is used for will be photosensitive
The electric signal output that pixel performs light sensing and produces.The substrate 26 is such as, but not limited to silicon substrate etc..
Specifically, in some embodiments, Figure 13 is refer to, Figure 13 shows the photoelectricity of another embodiment of the present invention
The structure of sensing device.Photosensitive pixel 22 is in array distribution, such as matrix distribution.It is of course also possible to it is other regular fashions point
Cloth or non-regular distribution.Scanline groups include multi-strip scanning line 201, and data line group includes a plurality of data lines 202, a plurality of to sweep
Retouch line 201 and a plurality of data lines 202 to intersect setting, and be arranged between adjacent photosensitive pixel 22.For example, multi-strip scanning
Line G1, G2 ... Gm are laid along Y-direction interval, and a plurality of data lines S1, S2 ... Sn is spaced laying in X direction.So, ground is changed, should
Multi-strip scanning line 201 does not limit being vertically arranged of being shown in Figure 13 with a plurality of data lines 202, can also be at an angle set
Put, such as 30 °, 60 ° etc..Further, since scan line 201 and the electric conductivity of data cable 202, therefore the scanning being in the crossed position
Isolated between line 201 and data cable 202 by insulating materials.
It should be noted that above-mentioned scan line 201 and the distribution of data cable 202 and the setting of quantity are not limited to
An illustrative embodiments is stated, corresponding scanline groups and data cable can be correspondingly arranged according to the difference of the structure of photosensitive pixel
Group.
Further, multi-strip scanning line 201 is all connected with one drive circuit 25, and a plurality of data lines 202 is all connected with a signal
Manage circuit 27.Drive circuit 25 is used to provide corresponding scanning drive signal, and is transferred to accordingly by corresponding scan line 201
Photosensitive pixel 22, with activate the photosensitive pixel 22 perform light sensing.The drive circuit 25 is formed on substrate 26, also may be used certainly
To be electrically connected by flexible PCB and photosensitive pixel 22, that is, connect multi-strip scanning line 201.Signal processing circuit 27 passes through number
The electric signal for receiving the corresponding execution light sensing of photosensitive pixel 22 according to line 202 and producing, and target is obtained according to the electric signal
The biological information of object.
In some embodiments, photoelectric sensor device 20 further includes a controller 29, which, which is used to control, drives
The corresponding scanning drive signal of dynamic circuit output, such as, but not limited to activates photosensitive pixel 22 and performs light sensing line by line.The control
Device 29 processed is additionally operable to control signal process circuit 27 and receives the electric signal that photosensitive pixel 22 exports, and performs light sensing receiving
After the electric signal that all photosensitive pixels 22 export, the biological information of target object is generated according to the electric signal.
Further, above-mentioned process circuit 27 and controller 29 may be formed on substrate 26, can also pass through flexible circuit
Plate is electrically connected with photosensitive nude film 24.
In some embodiments, as shown in figure 14, the concrete structure of a photosensitive pixel 22 is shown.The photosensitive pixel
22 include a sensor devices 220 and a switching device 222.The switching device 222 has a control terminal C and two signal ends, example
Such as the first signal end Sn1 and secondary signal end Sn2.Wherein, the control terminal C of switching device 222 is connected with scan line 201, switch
First signal end Sn1 of device 222 connects a reference signal L, the secondary signal end Sn2 of switching device 222 through sensor devices 220
It is connected with data cable 202.It should be noted that the photosensitive pixel 22 shown in Figure 14 is only used for illustrating, however it is not limited to photosensitive
Other composition structures of pixel 22.
Specifically, above-mentioned sensor devices 220 are such as, but not limited to photodiode, phototriode, photodiode, light
Resistance, thin film transistor (TFT) any one or it is several.It is negative by applying at the both ends of photodiode by taking photodiode as an example
To voltage, at this time, if photodiode receives optical signal, the photoelectric current with optical signal proportion relation will be produced,
The light signal strength received is bigger, and the photoelectric current of generation is then bigger, the speed that the voltage on photodiode anode declines
It is faster, therefore by gathering the voltage signal on photodiode anode, so as to obtain the reflection of target object different parts
Light signal strength, and then obtain the biological information of target object.It is understood that in order to increase sensor devices 220
Photosensitive effect, can set multiple sensor devices 220.
Further, switching device 222 be such as, but not limited to triode, metal-oxide-semiconductor, in thin film transistor (TFT) any one or
It is several.Certainly, which can also include other kinds of device, and quantity can also be 2,3 etc..
In some embodiments, in order to further improve the sensing precision of photoelectric sensor device 20, can also select pair
The high sensor devices 220 of the luminous sensitivity of blue light signal.By selecting to the photosensitive of blue light signal and green light signal
The sensor devices 220 of high sensitivity perform light sensing so that the sense of the sensor devices 220 to blue light signal and green light signal
Light is sensitiveer, therefore it also avoid interference caused by red light signal in ambient light to a certain extent, so as to improve photoelectric transfer
The sensing precision of induction device 20.
By taking 22 structure of photosensitive pixel shown in Figure 14 as an example, the grid of thin film transistor (TFT) TFT is as switching device 222
The source electrode of control terminal C, thin film transistor (TFT) TFT and the first signal end Sn1 and secondary signal to drain to should be used as switching device 222
Hold Sn2.The grid of thin film transistor (TFT) TFT is connected with scan line 201, and the source electrode of thin film transistor (TFT) TFT is with photodiode D1's
Anode connects, and the drain electrode of thin film transistor (TFT) TFT is connected with data cable 202.The cathode connection reference signal L of photodiode D1,
Reference signal L is, for example, earth signal or negative voltage signal.
When above-mentioned photosensitive pixel 22 performs light sensing, apply one by grid of the scan line 201 to thin film transistor (TFT) TFT
Scanning drive signal, to drive thin film transistor (TFT) TFT to turn on.At this time, data cable 202 connects a positive voltage signal, when film is brilliant
After body pipe TFT conductings, the positive voltage signal on data cable 202 applies to the anode of photodiode D1 through thin film transistor (TFT) TFT,
Due to the plus earth of photodiode D1, photodiode D1 both ends will apply a backward voltage so that two pole of photoelectricity
Pipe D1 is in reverse bias, i.e., in running order.At this time, when there is optical signal to be irradiated to photodiode D1, photoelectricity two
The reverse current of pole pipe D1 increases rapidly, so as to cause the curent change on photodiode D1, the electric current of the change can be from
Obtained on data cable 202.Since the intensity of optical signal is bigger, the reverse current of generation is also bigger, therefore according on data cable 202
The current signal got, can obtain the intensity of optical signal, and then obtain the biological information of target object.
In some embodiments, above-mentioned reference signal L can be positive voltage signal, negative voltage signal, earth signal etc..Only
The electric signal for wanting to provide on data cable 202 is applied to photodiode D1 both ends with reference signal L so that photodiode D1
Both ends form backward voltage, to perform light sensing, in the protection domain that the present invention limits.
It is understood that the connection mode of thin film transistor (TFT) TFT and photodiode D1 is simultaneously in above-mentioned photosensitive pixel 22
It is not limited to the connection mode shown in Figure 14, or other connection modes.For example, as shown in figure 15, thin film transistor (TFT) TFT
Grid G be connected with scan line 201, the drain D of thin film transistor (TFT) TFT is connected with the cathode of photodiode D1, film crystal
The source S of pipe TFT is connected with data cable 202.The anode connection positive voltage signal of photodiode D1.
Figure 16 is refer to, Figure 16 shows the partial structurtes for the OLED screen that display screen is an embodiment.With display screen 10
Exemplified by OLED display screen, which further comprises transparent substrate 101.The display pixel 12 includes being formed in transparent base
Anode 102 on plate 101, the luminescent layer 103 being formed on anode 102 and the cathode 104 for being formed in luminescent layer 103.Work as anode
102 a large amount of carriers when applying voltage signal, being gathered on anode 102 and cathode 104 corresponding with cathode 104 will be to shining
Layer 103 moves and enters luminescent layer 103, so as to excite luminescent layer 103 to send corresponding optical signal.
In some embodiments, the anode 102 and cathode 104 are made of an electrically conducting material.For example, the anode 102 is by oxygen
Change the suitable conductive material such as indium tin (ITO) to be made, which is made of the suitable conductive material such as metal or ITO.This is aobvious
Display screen 10 is not limited to OLED display screen, or the display screen of other suitable types.In addition, the display screen 10 can be firm
Property material hard screen, or the flexible screen of flexible material.Moreover, the OLED display screen of embodiment of the present invention can be bottom
The display device of emissive devices, top emission type device or other suitable construction types.
With reference to Figure 17, Figure 17 has gone out sensor devices and the opposed configuration of display pixel in the photosensitive pixel of an embodiment,
Display pixel 12 is such as, but not limited to red pixel R, green pixel G and tri- kinds of display pixels of blue pixel B, wherein red pixel
Luminescent layer in R is using the luminescent material for sending red light signal, and luminescent layer in green pixel G is using sending green light signal
Luminescent material, the luminescent layer in blue pixel B is using the luminescent material for sending blue light signal.Certainly, above-mentioned display screen 10
Other Display Techniques can also be used to realize display, such as color switch technology, contaminated using the light that Nan dian Yao is sent using fluorescence
Material relays out red, green, the optical signal of blueness again after absorbing.It should be noted that the display pixel 12 in display screen 10 is simultaneously
The arrangement mode shown in Figure 17 is not limited to, can also there is other arrangement modes, such as pentiel arrangement modes etc..
Further, display screen 10, which further includes, drives the luminous drive circuit of each display pixel 12 and corresponding driver circuit
(not shown), and the drive circuit and corresponding driver circuit can be arranged between each display pixel 12, can also
It is arranged at each lower section of display pixel 12.For more preferable display effect, display pixel, drive circuit and corresponding drives line are set
The region on road is light tight region, remaining region is then transmission region.And sensor devices 220 are then located under the transmission region
Side, to carry out preferably light sensing.It is understood that the transmission region and light tight region in display screen 10 be not tight
The limitation of lattice, if printing opacity is determined by the distribution for forming structure and forming structure of display screen 10.For example, shown when being formed
When the structure of pixel 12 uses transparent configuration, transmission region will be changed into by setting the region of display pixel.
Figure 17 is continued referring to, gap H is equipped between adjacent display pixel, and there is transmission region in the H of the gap.Sense
Sensor devices 220 in light pixel 22 are correspondingly arranged in the lower section of the gap H between adjacent display pixel.Here lower section example
Such as but it is not limited to underface, can guarantee that the position that enough optical signals are received.If it is understood that through between being somebody's turn to do
The optical signal of gap H is more, then the sensing precision of photoelectric sensor device 20 is higher.
In some embodiments, Figure 18 is refer to, Figure 18 shows the structure of another embodiment of electronic equipment.Should
The front of electronic equipment 100 includes the first viewing area 110 and the second viewing area 120, wherein the first viewing area 110 accounts for front entirely
Most of area of display area, the image of the high-resolution for showing electronic equipment；Second viewing area 120 is positioned at front
In lower position and account for the fraction area of whole display area, the image of the low resolution for showing electronic equipment, example
Such as virtual push button, navigation bar, prompt message.Above-mentioned photoelectric sensor device 20 is set corresponding to the second viewing area 120, with right
The target object being positioned on the second viewing area 120 performs light sensing, obtains the biological information of the target object.Need
Bright, which is not limited to the distributed architecture shown in Figure 18, can be according to electricity
The actual use of sub- equipment is needed and flexibly set.
In some embodiments, multiple first display pixels are included in the first viewing area 110, in the second viewing area 120
Including multiple second display pixels, and adjacent the first display pixel of the first gap-ratio between the second adjacent display pixel it
Between the second gap it is big.Therefore, when sensor devices 220 correspond to the second gap setting, the optical signal that is passed through from second gap
More, so as to improve the sensing precision of photoelectric sensor device 20.
In some embodiments, above-mentioned first viewing area, 110 and second viewing area 120 can be for same display screen not
Same display area.Certainly, which can also correspond to two display screens, then again should
Two display screens are spliced.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
The description of mode ", " example ", " specific example " or " some examples " etc. means with reference to the embodiment or example description
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the present invention.In this specification
In, schematic expression of the above terms is not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can combine in an appropriate manner in any one or more embodiments or example.
Although embodiments of the present invention have been shown and described above, it is to be understood that the above embodiment is
Exemplary, it is impossible to limitation of the present invention is interpreted as, those of ordinary skill in the art within the scope of the invention can be right
The above embodiment is changed, changes, replacing and modification.
Claims (26)
- A kind of 1. photoelectric sensor device, it is characterised in that：The photoelectric sensor device includes photosensitive nude film, the photosensitive nude film bag Include multiple photosensitive pixels；The photosensitive nude film is equipped with anti-aliasing image-forming component, and the anti-aliasing image-forming component is used to prevent institute State the optical signal received between photosensitive pixel adjacent in photosensitive nude film and aliasing occurs.
- 2. photoelectric sensor device as claimed in claim 1, it is characterised in that：The anti-aliasing image-forming component is away from described photosensitive Filter coating is equipped with the side of nude film or between the photosensitive nude film and the anti-aliasing image-forming component, the filter coating is used for By the filtered optical signal beyond default wave band.
- 3. photoelectric sensor device as claimed in claim 2, it is characterised in that：The default wave band is blueness, green light signal Corresponding wave band.
- 4. photoelectric sensor device as claimed in claim 1, it is characterised in that：The anti-aliasing image-forming component include extinction wall with And by extinction walled into multiple transmission regions.
- 5. photoelectric sensor device as claimed in claim 4, it is characterised in that：The transmission region is uniformly distributed.
- 6. photoelectric sensor device as claimed in claim 4, it is characterised in that：The extinction wall includes multiple alternately laminated settings Extinction block and keel.
- 7. photoelectric sensor device as claimed in claim 6, it is characterised in that：The keel is made of transparent material.
- 8. photoelectric sensor device as claimed in claim 4, it is characterised in that：Filling transparent material in the transmission region.
- 9. photoelectric sensor device as claimed in claim 1, it is characterised in that：The anti-aliasing image-forming component replaces including multilayer The light-absorption layer and clear support layer being stacked；The light-absorption layer includes multiple spaced extinction blocks；The transparent support Layer is filled by transparent material to be formed, and fills the interval between the extinction block in the lump；It is wherein described to be spaced corresponding region shape Into transmission region.
- 10. photoelectric sensor device as claimed in claim 9, it is characterised in that：The thickness of each layer of clear support layer is not It is equal.
- 11. photoelectric sensor device as claimed in claim 10, it is characterised in that：The thickness of the clear support layer successively increases Greatly.
- 12. photoelectric sensor device as claimed in claim 1, it is characterised in that：The anti-aliasing image-forming component is formed directly into On the photosensitive panel, alternatively, after the anti-aliasing image-forming component is separately made, then be arranged on the photosensitive nude film.
- 13. photoelectric sensor device as claimed in claim 2, it is characterised in that：The photoelectric sensor device further includes an encapsulation Body, the packaging body are used for the anti-aliasing image-forming component and filter coating above the photosensitive nude film and the photosensitive nude film It is packaged.
- 14. photoelectric sensor device as claimed in claim 1, it is characterised in that：The photosensitive nude film includes a substrate, the sense Light pixel is in array distribution on the substrate.
- 15. photoelectric sensor device as claimed in claim 1, it is characterised in that：The photosensitive pixel includes an at least photoreceptor Part, the sensor devices are used to receive optical signal, and the optical signal received is converted to corresponding electric signal.
- 16. photoelectric sensor device as claimed in claim 15, it is characterised in that：The sensor devices include photodiode, One or more of light resistance, phototriode.
- 17. photoelectric sensor device as claimed in claim 14, it is characterised in that：Between the adjacent photosensitive pixel be equipped with The scanline groups and data line group that the photosensitive pixel is electrically connected.
- 18. photoelectric sensor device as claimed in claim 17, it is characterised in that：The photoelectric sensor device further comprises driving The dynamic photosensitive pixel performs the drive circuit of light sensing, and the drive circuit is corresponded to and is connected with the scanline groups, is used for Corresponding drive signal is provided, and the photosensitive pixel is transferred to by the scanline groups.
- 19. photoelectric sensor device as claimed in claim 18, it is characterised in that：The drive circuit is formed in the substrate On.
- 20. photoelectric sensor device as claimed in claim 19, it is characterised in that：The photoelectric sensor device further comprises letter Number process circuit, electric signal that the signal processing circuit performs light sensing according to the photosensitive pixel and produces obtain target The biological information of object.
- 21. photoelectric sensor device as claimed in claim 20, it is characterised in that：The photoelectric sensor device further comprises controlling Device processed, the controller are used to control the drive circuit to export corresponding drive signal, and the control signal processing electricity Road receives the electric signal of the photosensitive pixel output.
- 22. photoelectric sensor device as claimed in claim 20, it is characterised in that：The signal processing circuit and controller are equal It is arranged on the substrate, or the signal processing circuit and controller pass through flexible PCB and the photosensitive nude film electricity Property connection.
- 23. the photoelectric sensor device as described in any one in claim 1-22, it is characterised in that：The photoelectric sensor device For fingerprint sensing device.
- 24. the photoelectric sensor device as described in any one in claim 1-22, it is characterised in that：The photoelectric sensor device For sensitive chip, for sensing biological information.
- 25. photoelectric sensor device as claimed in claim 1, it is characterised in that：The photoelectric sensor device further includes an encapsulation Body, the packaging body are used to the anti-aliasing image-forming component above the photosensitive nude film and the photosensitive nude film being packaged.
- 26. a kind of electronic equipment, it is characterised in that：Including display screen and such as claim 1-25 any one of them photoelectric transfers Induction device, and the photoelectric sensor device is arranged at below the display screen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710709054.9A CN107958195B (en) | 2017-08-17 | 2017-08-17 | Photoelectric sensing device and electronic equipment |
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|---|---|---|---|
| CN201710709054.9A CN107958195B (en) | 2017-08-17 | 2017-08-17 | Photoelectric sensing device and electronic equipment |
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| CN107958195B CN107958195B (en) | 2021-10-26 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108985235A (en) * | 2018-07-19 | 2018-12-11 | 京东方科技集团股份有限公司 | Light collimates diaphragm and its manufacturing method and optical fingerprint identification device |
| CN113899458A (en) * | 2021-09-22 | 2022-01-07 | Oppo广东移动通信有限公司 | Optical sensor and electronic device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080219522A1 (en) * | 2007-03-09 | 2008-09-11 | Authentec, Inc. | Finger sensor using polarized light and associated methods |
| CN104036230A (en) * | 2014-03-21 | 2014-09-10 | 中山微盾信息科技有限公司 | Ultra-thin finger vein recognition system |
| CN105787421A (en) * | 2014-12-19 | 2016-07-20 | 上海箩箕技术有限公司 | Fingerprint identification system |
| CN106773219A (en) * | 2017-02-07 | 2017-05-31 | 京东方科技集团股份有限公司 | A kind of display device |
| CN209803766U (en) * | 2017-08-17 | 2019-12-17 | 深圳信炜科技有限公司 | Photoelectric sensing device and electronic equipment |
-
2017
- 2017-08-17 CN CN201710709054.9A patent/CN107958195B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080219522A1 (en) * | 2007-03-09 | 2008-09-11 | Authentec, Inc. | Finger sensor using polarized light and associated methods |
| CN104036230A (en) * | 2014-03-21 | 2014-09-10 | 中山微盾信息科技有限公司 | Ultra-thin finger vein recognition system |
| CN105787421A (en) * | 2014-12-19 | 2016-07-20 | 上海箩箕技术有限公司 | Fingerprint identification system |
| CN106773219A (en) * | 2017-02-07 | 2017-05-31 | 京东方科技集团股份有限公司 | A kind of display device |
| CN209803766U (en) * | 2017-08-17 | 2019-12-17 | 深圳信炜科技有限公司 | Photoelectric sensing device and electronic equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108985235A (en) * | 2018-07-19 | 2018-12-11 | 京东方科技集团股份有限公司 | Light collimates diaphragm and its manufacturing method and optical fingerprint identification device |
| CN113899458A (en) * | 2021-09-22 | 2022-01-07 | Oppo广东移动通信有限公司 | Optical sensor and electronic device |
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| Publication number | Publication date |
|---|---|
| CN107958195B (en) | 2021-10-26 |
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