CN107957747A - Electronic equipment - Google Patents
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- CN107957747A CN107957747A CN201710708278.8A CN201710708278A CN107957747A CN 107957747 A CN107957747 A CN 107957747A CN 201710708278 A CN201710708278 A CN 201710708278A CN 107957747 A CN107957747 A CN 107957747A
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- electronic equipment
- pixel
- display
- display screen
- optical signal
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/1613—Constructional details or arrangements for portable computers
- G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
Abstract
The present invention discloses a kind of electronic equipment, photoelectric sensor device including a display screen and below display screen, display screen includes multiple display pixels, and photoelectric sensor device includes substrate and the multiple photosensitive pixels being arranged on substrate, and photosensitive pixel is correspondingly arranged with display pixel.
Description
Technical field
The present invention relates to a kind of electronic equipment that can realize biological information sensing.
Background technology
At present, biometric information sensor, especially fingerprint Identification sensor, have been increasingly becoming the electronic products such as mobile terminal
Standard configuration component.Since optical fingerprint identification sensor specific capacitance formula fingerprint Identification sensor has stronger penetration capacity,
Therefore it has been proposed that a kind of optical fingerprint applied to mobile terminal identifies module.As shown in Figure 1, the optical fingerprint identifies
Module includes optical fingerprint sensor 400 and light source 402.Wherein, which is arranged at mobile terminal
The lower section of cover sheet 401.The side that the light source 402 closes on the optical fingerprint identification sensor 400 is set.When the hand of user
When referring to F contact protection cover boards 401, the optical signal that light source 402 is sent through cover sheet 401 and reaches finger F, by finger F
Valley and a ridge reflection after, received by optical fingerprint identification sensor 400, and form the fingerprint image of finger F.
So, above-mentioned optical finger print identification module, which can only limit to, is arranged in the non-display area of mobile terminal, it is therefore necessary to
It is proposed a kind of fingerprint recognition structure that may be disposed in viewing area.
The content of the invention
Embodiment of the present invention is intended at least solve one of technical problem existing in the prior art.For this reason, the present invention is real
The mode of applying needs to provide a kind of electronic equipment.
The a kind of electronic equipment of embodiment of the present invention, including a display screen and the photoelectricity below the display screen
Sensing device, the display screen include multiple display pixels, and the photoelectric sensor device includes substrate and is arranged at the substrate
On multiple photosensitive pixels, and the photosensitive pixel is correspondingly arranged with the display pixel.
The electronic equipment of embodiment of the present invention is not only realized by the way that photoelectric sensor device is arranged at below display screen
Biological information sensing is carried out to the target object in the display area of electronic equipment, and the light sent using display screen is believed
The biological information sensing of target object number is realized, without the extra biology for setting light source, reducing electronic equipment
Characteristic information senses cost.It is additionally, since photoelectric sensor device to be located at below display screen, therefore does not interfere with electronic equipment just
Often display.
Further, since the photoelectric sensor device is arranged at below the display screen of electronic equipment, not only realizes and set from electronics
Standby middle front obtains the biological information of target object, so that the positive screen accounting of electronic equipment can be sufficiently large,
The direction for being conducive to electronic equipment towards full screen display is developed.
In some embodiments, the display screen is OLED display screen.
In some embodiments, the photosensitive pixel includes an at least sensor devices, and the sensor devices correspond to position
Below the display pixel.
In some embodiments, the light emission side of the display screen is equipped with CF films, and the CF films include red, green
With blue three kinds of photoresists, the white light signal for display pixel to be sent is filtered, and is correspondingly formed red, green and blueness three
Kind optical signal；The sensor devices are located at the corresponding blue display pixels of the blue light resistance and/or the green photoresist corresponds to
Green display pixels below.
Since display panel is equipped with CF films so that each display pixel, which corresponds to, sends three kinds of red, green, blueness light letters
Number, therefore the optical signal reflected through target object, after the filtering of CF films, correspondence can obtain red, green, blueness three
Kind optical signal.And ambient lighting is when being mapped on target object, such as finger, red ambient light can penetrate target object, blueness
It can be absorbed with the ambient light of green by target object.Therefore blue display pixels, green display pixels are located at by photosensitive unit
Lower section, can eliminate the interference of ambient light, improve sensing precision of the photoelectric sensor device to target object.
In some embodiments, the display pixel includes red, green, blue display pixels.
In some embodiments, the display screen further comprises microresonator knot corresponding with the display pixel
Structure；The sensor devices are located at below the red display pixel.
Since display screen has microresonator structure, the optical signal reflected through target object passes through display pixel
When, red light signal will occur reflection by micro- resonator structure at red display pixel and be projected from light emission side, only blueness
Red display pixel is passed through with green light signal, is located at thus by sensor devices below red display pixel, can be effectively
Avoid penetrating the interference of the red light signal of target object in ambient light, improve the sensing precision of photoelectric sensor device.
In some embodiments, the sensor devices are also located under the blue display pixels or green display pixels
Side, and the sensor devices are equipped with filter coating, the filter coating is used to be filtered the optical signal beyond default wave band, and
The setting of the default wave band is with the different and different of the placement location of sensor devices.
In some embodiments, the sensor devices in red, green, blue display pixels any one or
It is multiple；The sensor devices are equipped with filter coating, and the filter coating is used to be filtered the optical signal beyond default wave band.
Embodiment of the present invention utilizes the translucency of display pixel, and sensor devices are located at below display pixel, so that
Obtaining the photosensitive area of sensor devices can be set enough to big, and biological characteristic not only can be achieved using existing display screen structure
Information senses, and reduces the manufacturing cost of electronic equipment, and also assures that the optical signal mesopodium through display pixel is enough
Optical signal is received by sensor devices, improves the sensing precision of photoelectric sensor device.In addition, by setting filter coating, will be corresponding
Interference signal filter out, further increase the sensing precision of photoelectric sensor device.
In some embodiments, the electronic equipment further comprises cover sheet, and the cover sheet is positioned at described
Above display screen.
In some embodiments, the photoelectric sensor device is a sensitive chip, for sensing biological information.
In some embodiments, the middle bottom of the display screen installs a sensing region touched for target object,
The photoelectric sensor device is corresponded to below the sensing region.It is in this way, user-friendly.
In some embodiments, the photoelectric sensor device further comprises anti-aliasing image-forming component, described anti-aliasing
Image-forming component is located on the photosensitive pixel, and the optical signal for preventing from receiving between adjacent photosensitive pixel produces aliasing.
Since reflection of the target object different parts to optical signal has differences, sensed between adjacent photosensitive unit
Optical signal can be there are aliasing, so that the sensing image for causing to obtain obscures, therefore embodiment of the present invention passes through in photosensitive pixel
It is upper that anti-aliasing image-forming component is set, it is therefore prevented that the optical signal that adjacent photosensitive pixel receives produces aliasing, improves photoelectric sensing
The sensing precision of device.
In some embodiments, the multiple transmission region is uniformly distributed.Equally distributed transmission region causes anti-mixed
The preparation process for building up element is simpler.
In some embodiments, the extinction wall includes the extinction block and keel of multiple alternately laminated settings.Due to
The thickness of the thickness ratio extinction wall of each extinction block is small, thus etching formed transmission region technique it is opposite be easier to, so make
The technique for obtaining anti-aliasing image-forming component is easier to, and also ensures the light transmission of transmission region.In addition, by keel with
Extinction block is stacked to form extinction wall, accelerates the processing procedure of anti-aliasing image-forming component, and ensure that anti-aliasing image-forming component
Anti-aliasing effect.
In some embodiments, the keel is made of transparent material.
In some embodiments, filling transparent material in the transmission region.By filling transparent material in transmission region
Material, not only increases the intensity of anti-aliasing image-forming component, can also avoid impurity from entering in transmission region and influence translucent effect.
In some embodiments, the light-absorption layer of the anti-aliasing image-forming component including the alternately laminated setting of multilayer and transparent
Supporting layer；The light-absorption layer includes multiple spaced extinction blocks；The clear support layer is filled by transparent material to be formed, and
The interval between the extinction block is filled in the lump；The wherein corresponding region in the interval forms the transmission region.
In some embodiments, the thickness of each layer of clear support layer is unequal.Pass through setting for clear support layer
Put, not only accelerate the preparation speed of anti-aliasing image-forming component, and set by the distance between two layers adjacent of light-absorption layer,
It is also ensured that the anti-aliasing effect of anti-aliasing image-forming component.
In some embodiments, the thickness of the clear support layer successively increases.
By being set to the thickness of clear support layer, avoid and deviate predetermined angle scope relative to photosensitive nude film vertical direction
Outer optical signal passes through anti-aliasing image-forming component, so as to improve the anti-aliasing effect of anti-aliasing image-forming component.
In some embodiments, the photoelectric sensor device is fingerprint sensing device.
The additional aspect and advantage of embodiment of the present invention will be set forth in part in the description, partly by from following
Become obvious in description, or recognize by the practice of embodiment of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of embodiment of the present invention retouch embodiment from reference to accompanying drawings below
It will be apparent and be readily appreciated that in stating, wherein：
Fig. 1 is a kind of schematic diagram of optical bio characteristic information sensing structure applied to electronic equipment of the prior art；
Fig. 2 is that the photoelectric sensor device of an embodiment of the present invention is applied to the positive structure schematic of electronic equipment；
Fig. 3 is cross-sectional view of the electronic equipment along I-I lines in Fig. 2, wherein illustrate only the portion of electronic equipment
Separation structure；
Fig. 4 be in electronic equipment shown in Fig. 3 display screen and photoelectric sensor device in the close-up schematic view of a-quadrant；
Fig. 5 is the structure diagram of the display screen of an embodiment of the present invention；
Fig. 6 is the part-structure schematic diagram of the electronic equipment of an embodiment of the present invention；
Fig. 7 is the part-structure schematic diagram of the electronic equipment of another embodiment of the present invention；
Fig. 8 is the part-structure schematic diagram of the electronic equipment of a further embodiment of this invention；
Fig. 9 is the structure diagram of the photoelectric sensor device of an embodiment of the present invention；
Figure 10 is the optical signal that the anti-aliasing image-forming component of an embodiment in photoelectric sensor device shown in Fig. 9 can pass through
Scope schematic diagram；
Figure 11 is the partial structural diagram of the anti-aliasing image-forming component of an embodiment of the present invention；
Figure 12 is the partial structural diagram of the anti-aliasing image-forming component of another embodiment of the present invention；
Figure 13 is the preparation process schematic diagram of the anti-aliasing image-forming component shown in Figure 11；
Figure 14 is the partial structural diagram of the anti-aliasing image-forming component of a further embodiment of this invention；
Figure 15 is the structure diagram of the photoelectric sensor device of another embodiment of the present invention；
Figure 16 is the electrical block diagram of the photosensitive pixel of an embodiment of the present invention；
Figure 17 is the electrical block diagram of the photosensitive pixel of another embodiment of the present invention.
Embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element is represented to same or similar label eventually or there is same or like element.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that term " first ", " second " are only used for description purpose, and cannot
It is interpreted as indicating or implies relative importance or imply the quantity of the technical characteristic indicated by indicating.Thus, define " the
One ", one or more feature can be expressed or be implicitly included to the feature of " second ".In description of the invention
In, " multiple " are meant that two or more, unless otherwise specifically defined." contact " or " touch " includes direct
Contact or mediate contact.For example, the photoelectric sensor device hereinafter disclosed, it is arranged on the inside of electronic equipment, such as aobvious
The lower section of display screen, then user's finger pass through cover sheet and the display screen mediate contact photoelectric sensor device.
In the description of the present invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection or can be in communication with each other；It can be directly connected, can also be by between intermediary
Connect connected, can be the interaction relationship of connection inside two elements or two elements.For the ordinary skill of this area
For personnel, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.In order to
Simplify disclosure of the invention, hereinafter to the components of specific examples and be set for describing.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relation.In addition, the present invention provides various specific techniques and material examples, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
Further, described feature, structure can be incorporated in one or more embodiment party in any suitable manner
In formula.In the following description, there is provided many details fully understand embodiments of the present invention so as to provide.So
And one of ordinary skill in the art would recognize that, without one or more in the specific detail, or using other structures,
Constituent element etc., can also put into practice technical scheme.In other cases, it is not shown in detail or describes known features or behaviour
Make to avoid the fuzzy present invention.
Embodiment of the present invention proposes a kind of photoelectric sensor device being arranged in electronic equipment, is especially arranged at electronics and sets
Below standby display screen.The display screen, which is such as, but not limited to OLED display panel etc., has the display device for sending optical signal.Electricity
During sub- equipment work, display screen sends optical signal, to realize corresponding display effect.At this time, if there is target object to touch the electricity
Sub- equipment, the optical signal that display screen is sent reflect after reaching target object, after the optical signal reflected passes through display screen
Received by photoelectric sensor device, the optical signal received is converted to electric signal corresponding with optical signal by photoelectric sensor device.Root
The electric signal produced according to the photoelectric sensor device, can obtain the predetermined biological information of target object.
Above-mentioned electronic equipment for example but be not limited to consumption electronic products, household formula electronic product, vehicular electronics production
The electronic product of the suitable types such as product, financial terminal product.Wherein, consumption electronic products are as being mobile phone, tablet computer, notes
This computer, tabletop display, computer all-in-one machine etc..Household formula electronic product is as intelligent door lock, TV, refrigerator, wearable set
It is standby etc..Vehicular electronic product is such as automatic navigator, vehicle-carrying DVD.Financial terminal product is as ATM machine, self-service handled industry
Terminal of business etc..Following embodiments are described by taking the mobile terminal of cell phone type as an example, but as it was previously stated, following embodiment
It is equally applicable to other suitable electronic products, it is not limited to the mobile terminal of cell phone type.
The predetermined biological information of above-mentioned target object (or is：Image information) it is such as, but not limited to fingerprint, palmmprint, ear
The skin lines information such as line, sole, and other suitable biological informations such as heart rate, blood oxygen concentration, vein, artery.Should
Predetermined biological information can be any one or a few in the information of aforementioned list.The target object is such as, but not limited to people
Body, or the organism of other suitable types.
It refer to Fig. 2 and Fig. 3, Fig. 2 show one embodiment of electronic equipment for applying photoelectric sensor device of the present invention
Facad structure, Fig. 3 shows cut-away section structure of the electronic equipment in Fig. 2 along I-I lines, and Fig. 3 illustrate only electronics
The part-structure of equipment.The photoelectric sensor device 20 of embodiment of the present invention is applied to a mobile terminal 100, the mobile terminal
100 front is equipped with a display screen 10, which is equipped with cover sheet 30.Alternatively, the screen of the display screen 10 accounts for
Compare it is high, such as more than 80%.Screen accounting refers to that the display area S1 of display screen 10 accounts for the ratio of the front surface region of mobile terminal 100
Example.The photoelectric sensor device 20 is correspondingly arranged at the lower section of the display screen 10, the office of the display area S1 of the corresponding display screen 10
Portion region is set.The region for defining positive correspondence or the face photoelectric sensor device 20 of the mobile terminal 100 is sensing area S2.
The photoelectric sensor device 20 is used to sense contact or the predetermined biological information close to the target object above sensing area S2.
Sensing area S2 can be any position on viewing area.For example, sensing area S2 corresponds to the display of the display screen 10
Set in area at lower position.It is to be understood that sensing area S2 correspond in the display screen 10 set at lower position be for
The user is facilitated to be operated.For example, when user holds mobile phone, the thumb of user can conveniently touch the position of sensing area S2
Put.Certainly, sensing area S2 can also be positioned over the convenient other suitable positions touched of user.
When mobile terminal 100 is in bright screen state and is in biological information sensing modes, which sends
Optical signal.When user contacts or during close to sensing area S2, which receives the light reflected by user,
The light received is changed as corresponding electric signal, and the predetermined biological information of user is obtained according to the electric signal, for example,
Information in fingerprint.So as to which the photoelectric sensor device 20 can realize the mesh to contact or close to the regional area above viewing area
Mark object is sensed.
Fig. 4 is refer to, photoelectric sensor device 20 includes a substrate 26 and is arranged at multiple photosensitive on the substrate 26
Pixel 22, display screen 10 include multiple display pixels 12.Alternatively, in one embodiment, photosensitive pixel 22 and display pixel
12 are correspondingly arranged.Certainly, the photosensitive pixel 22 positioned at the lower section of display screen 10 does not limit to is correspondingly arranged with display pixel 12, can also
For other set-up modes.Since photoelectric sensor device 20 by the use of the optical signal that display screen 10 is sent is used as light source, the display screen 10
After the optical signal sent reaches finger, display screen 10 will be passed through and by photoelectric sensor device 20 by handling the optical signal that digital reflex is returned
Receive, therefore, which has a corresponding transmission region, and 22 face of the photosensitive pixel transmission region, so can be with
Ensure that enough optical signals are sensed, so as to carry out effectively light sensing.
Specifically, refer to Fig. 5, by display screen 10 for an embodiment OLED display screen exemplified by, the display screen 10 into
One step includes transparent substrate 101.The display pixel 12 include be formed on transparent substrate 101 anode anode 102, be formed in sun
Luminescent layer 103 on pole 102 and the cathode 104 for being formed in luminescent layer 103.Apply electricity when anode 102 is corresponding with cathode 104
When pressing signal, being gathered in anode 102 and a large amount of carriers on cathode 104 will move to luminescent layer 103 and enter luminescent layer
103, so as to excite luminescent layer 103 to send corresponding optical signal.
In some embodiments, the anode 102 and cathode 104 are made of an electrically conducting material.For example, the anode 102 is by oxygen
Change the suitable conductive material such as indium tin (ITO) to be made, which is made of the suitable conductive material such as metal or ITO.This is aobvious
Display screen 10 is not limited to OLED display screen, or the display screen of other suitable types.In addition, the display screen 10 can be firm
Property material hard screen, or the flexible screen of flexible material.Moreover, the OLED display panel of embodiment of the present invention can be
The display device of bottom emitting type device, top emission type device or other suitable construction types.
Further, display pixel 12 includes red pixel R, green pixel G and tri- kinds of display pixels of blue pixel B, its
The optical signal that middle red pixel R is projected be red light signal, and the optical signals of green pixel G injections is green light signal, blue picture
The optical signal that plain B is projected is blue light signal.Certainly, which can also include black picture element, white pixel；Or
Red pixel, green pixel, blue pixel and white pixel etc..
In some embodiments, show that the electronics of an embodiment of the present invention is set incorporated by reference to reference to Fig. 4 and Fig. 6, Fig. 6
Standby part-structure.Each photosensitive pixel 22 includes an at least sensor devices 220, which is used to receive optical signal,
And the optical signal received is converted into corresponding electric signal.Therefore, which is located at the lower section of display pixel 12, profit
With the translucency of display pixel, the optical signal for being reflected through target object and passing through the display pixel is received, to target object
Carry out biological information sensing.Further, since the sensor devices 220 are arranged at the lower section of display pixel 12, therefore the photoreceptor
The photosurface of part 220 can be equal to the area of display pixel 12, so can be achieved, reduce using existing display screen structure
The manufacturing cost of electronic equipment, and ensure the enough optical signals of optical signal mesopodium through display pixel by sensor devices 220
Receive, improve the sensing precision of photoelectric sensor device 20.
In some embodiments, sensor devices 220 are any one in red, blueness, green three kinds of display pixels
A or multiple lower section, by positioned at the lower section of display pixel 12, it is ensured that more optical signals are received by sensor devices 220.
Such as shown in Fig. 6, which is located at below blue display pixels B.In addition, the interference of other optical signals in order to prevent,
Filter coating 23 can be set on sensor devices 220.The filter coating 23 is used to be filtered the optical signal beyond default wave band.
For example, if the optical signal beyond blue light signal is interference signal, blue filter film is set, blue light signal is corresponded to
Optical signal beyond wave band is filtered.It should be noted that since the photoelectric sensor device 20 is arranged at the lower section of display screen 10,
Therefore after the filter coating 23 can be independently arranged, then fit on photosensitive nude film 24, so that the preparation process of filter coating 23
It is simpler.
Fig. 7 is refer to, Fig. 7 shows the part-structure of the electronic equipment of another embodiment of the present invention.The embodiment
In, the luminescent layer 103 of display pixel 12 sends white light, and the light exiting side of display pixel 12 is equipped with CF films 105, should
CF films 105 are used to be filtered the white light that display pixel 12 is sent, and form red, green and blue three kinds of optical signals.Tool
Body, which includes three kinds of photoresists, that is, corresponds to three kinds of display pixels and be arranged to red, green, blue three kinds of photoresists,
When the white light that luminescent layer 103 is sent passes through the CF films 105, corresponding red light signal, green light signal, the blue light of projecting is believed
Number.In other words, when the optical signal reflected through target object passes through display screen 10, red light signal passes through CF films 105
Blue light resistance or when green photoresist can be filtered.Therefore, sensor devices 220 in photosensitive pixel 22 are arranged at blue light resistance
The underface of corresponding display pixel and/or the corresponding display pixel of green photoresist, can eliminate the influence of interference signal, so as to carry
The high sensing precision of photoelectric sensor device 20.
Fig. 8 is refer to, Fig. 8 shows the part-structure of the electronic equipment of a further embodiment of this invention, the embodiment
In, in order to strengthen the intensity of the optical signal of display pixel injection, which is equipped with corresponding microresonator structure 106, should
Microresonator structure 106 produces micro- resonance effects to the optical signal of specific wavelength, so that the optical signal of the specific wavelength exists
Projecting direction is strengthened, and the optical signal beyond specific wavelength then can be to pass through the microresonator structure 106.It is such as red aobvious
Show the corresponding microresonator structures of pixel R, the red light signal of injection can be made be strengthened, remaining optical signal is then through micro-
Structure of resonant cavity 106.In other words, when the optical signal reflected through target object passes through red display pixel R, if the light
There are red light signal in signal, then red light signal can be reflected back, remaining optical signal then passes through red display pixel R
And received by sensor devices 220, so by the sensor devices 220 in photosensitive pixel 22 be arranged at red display pixel R just under
Side, can effectively filter the red light signal that target object is penetrated in ambient light, improve the sensing precision of photoelectric sensor device 20.
Further, sensor devices 200 are also provided at below green display pixels G or blue display pixels B.Accordingly,
Sensor devices 220 are equipped with filter coating, and the filter coating is used to be filtered the optical signal beyond default wave band, and this is default
The setting of wave band is different and different with the placement location of sensor devices 220.Specifically, if sensor devices 220 are arranged at green
Below display pixel G, then red and blue light signal will pass through green display in the optical signal reflected by target object
Pixel, therefore the filter coating set is used to filter out the optical signal beyond blue light signal so that sensor devices 220 only receive
Blue light signal.Similarly, if sensor devices 220 are arranged at below red display pixel R, blue display pixels B, filter coating 23
For the optical signal beyond green light signal to be filtered out so that sensor devices 220 only receive green light signal.
In some embodiments, Fig. 9 is refer to, Fig. 9 shows the photoelectric sensor device of an embodiment of the present invention
Structure.In embodiment of the present invention, photoelectric sensor device 20 includes a photosensitive nude film 24, and the photosensitive nude film 24 includes substrate 26
With the multiple photosensitive pixels 22 being arranged on substrate 26.Photosensitive pixel 22 is used to receive the optical signal that top is come, and will receive
Optical signal be converted to corresponding electric signal.One anti-aliasing image-forming component 28, the anti-aliasing imaging are set on the photosensitive nude film 24
Aliasing occurs for the optical signal that element 28 is used to prevent from receiving between adjacent photosensitive pixel 22.
Since reflection of the target object different parts to optical signal has differences, and the out-of-flatness of target object surface,
Some positions of target object are contacted with cover sheet 30 (see Fig. 3), some positions are with cover sheet 30 not in contact with so as to cause to connect
Diffusing reflection occurs for tactile position, not in contact with position occur mirror-reflection, therefore sensed between adjacent photosensitive pixel 22
Optical signal can be there are aliasing, so that the sensing image for causing to obtain obscures.In this regard, embodiment of the present invention is on photosensitive nude film 24
One anti-aliasing image-forming component 28 is set, therefore the image obtained after the execution light sensing of photosensitive pixel 22 is more visible, so as to improve
The sensing precision of photoelectric sensor device 20.
In some embodiments, anti-aliasing image-forming component 28 has extinction characteristic, is irradiated to anti-aliasing image-forming component 28
On optical signal in, only could pass through anti-aliasing image-forming component 28 and quilt with the photosensitive 24 approximately perpendicular optical signal of nude film
Photosensitive pixel 22 receives, remaining optical signal is then absorbed by anti-aliasing image-forming component 28.In this way, it can prevent adjacent photosensitive
The optical signal received between pixel 22 produces aliasing.It should be noted that include with photosensitive 24 approximately perpendicular optical signal of nude film
Predetermined angle scope is deviated perpendicular to the optical signal of the photosensitive nude film 24, and relative to the vertical direction of the photosensitive nude film 24
Interior optical signal.The predetermined angle scope is in ± 20 °.
Specifically, which includes extinction wall 281 and the multiple transparent areas enclosed by extinction wall 281
Domain 282.Extinction wall 281 is formed by light absorbent.The light absorbent includes metal oxide, charcoal blacking, black ink etc..Its
In, the metal in metal oxide is such as, but not limited to chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), molybdenum
(Mo) one or more.The extending direction of transmission region 282 is the direction vertical with photosensitive nude film 24, so as to be irradiated to anti-mixed
, can be to pass through transmission region with the optical signal on photosensitive 24 approximately perpendicular direction of nude film in the optical signal for building up element 28
282, remaining optical signal is then absorbed by extinction wall 281.
In some embodiments, as shown in Figure 10, Figure 10 shows the optical signal model through anti-aliasing image-forming component 28
Enclose.Due to the extinction characteristic of anti-aliasing image-forming component 28, the optical signal between only optical signal L1 and optical signal L2 can pass through
Transmission region 282 reaches photosensitive pixel 22, remaining optical signal is absorbed by the extinction wall 281 of anti-aliasing image-forming component 28.By
Figure 10 understands that the cross-sectional area of transmission region 282 is smaller, and the scope by the angle [alpha] of the optical signal of transmission region 282 is smaller,
Therefore the anti-aliasing effect of anti-aliasing image-forming component 28 is better.In this way, the relatively small area set by anti-aliasing image-forming component 28
Transmission region 282, the anti-aliasing effect of anti-aliasing image-forming component 28 can be improved.Further, since anti-aliasing image-forming component 28
The cross-sectional area of transmission region 282 is smaller, therefore each photosensitive pixel 22 will correspond to multiple transmission regions 282, so that sense
Light pixel 22 can sense enough optical signals, improve the sensing precision of photoelectric sensor device 20.
Further, Figure 11 is refer to, Figure 11 has gone out the structure of the anti-aliasing image-forming component 28 of an embodiment of the present invention.
Extinction wall 281 is sandwich construction, and the extinction wall includes the extinction block 281a and keel 281b of alternately laminated setting.One implements
In mode, extinction block 281a is formed by light absorbent.The light absorbent be such as, but not limited to metal oxide, charcoal blacking,
Black ink etc..Wherein, the metal in metal oxide is such as, but not limited to chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten
(W), titanium (Ti), the one or more of molybdenum (Mo).Keel 281b is such as, but not limited to the hyaline layer formed by transparent material, example
Such as trnaslucent materials, light absorbent.
In some embodiments, multiple extinction block 281a positioned at same layer are arranged at intervals, and are respectively inhaled in the same layer
The region corresponding to interval between light block 281a is transmission region 282.Further, multiple extinction block 281a of same layer with
And multiple keel 281b can once be made.Specifically, by providing a mask, the diaphragm that the mask is integrally formed,
And the diaphragm corresponds to the position formation perforate of extinction block 281a, and the shape of the perforate and size and the shape of extinction block 283 are big
It is small consistent.By the mask, evaporation forms the extinction block 281a and keel 281b that are arranged alternately on a carrier successively,
So as to form anti-aliasing image-forming component 28.
By the setting of keel 281b, the processing procedure of anti-aliasing image-forming component 28 is not only accelerated, and passes through keel
The height of 281b is set, and can guarantee that the anti-aliasing effect of anti-aliasing image-forming component 28.
In some embodiments, transparent material can be filled in above-mentioned transmission region 282, to increase anti-aliasing imaging
The intensity of element layer, can also avoid impurity from entering in transmission region 282 and influence translucent effect.In order to ensure transmission region 282
Translucent effect, transparent material can select the larger material of light transmittance, such as glass, PMMA (acrylic), PC (poly- carbonic acid
Ester) etc..
In some embodiments, Figure 12 is refer to, Figure 12 shows the anti-aliasing imaging of another embodiment of the present invention
The structure of element.The anti-aliasing image-forming component 28 is sandwich construction, and the anti-aliasing image-forming component 28 includes alternately laminated setting
Light-absorption layer 283 and clear support layer 284；The light-absorption layer 283 includes multiple spaced extinction block 283a；It is described transparent
Supporting layer 284 is filled by transparent material to be formed, and fills the interval 283b between the extinction block 283a in the lump；Between wherein described
The transmission region 282 is formed every the corresponding regions of 283b.
Further, Figure 13 is refer to, Figure 13 shows the preparation of the anti-aliasing image-forming component of an embodiment of the present invention
Process.Specifically, when preparing anti-aliasing image-forming component 28, one layer of light absorbent is first coated on a carrier, and in extinction
282 corresponding partial etching of transmission region is fallen in material layer, part is not etched and forms multiple extinction block 283a.The etching
Technology is such as, but not limited to photoengraving, X-ray etching, electron beam lithography and ion beam etching.And etching type may include
Two kinds of dry etching and wet etching.Then, transparent material layer, and the transparent material are coated on extinction block 283 after the etching
Material not only covers multiple extinction block 283a, the interval 283b between multiple extinction block 283a is also filled in the lump, so as to be formed transparent
Supporting layer 284.Then, multiple extinction block 283a are formed in clear support layer 284 according to the generation type of light-absorption layer 283, according to
It is secondary to analogize to form the alternately stacked light-absorption layer 283 of multilayer and clear support layer 284, so as to form anti-aliasing image-forming component 28.
Further, in order to ensure the translucent effect of transmission region 282, the transparent material for forming clear support layer 284 can
To select the larger material of light transmittance, such as glass, PMMA (acrylic), PC (makrolon), epoxy resin etc..
In some embodiments, Figure 14 is refer to, Figure 14 shows the anti-aliasing imaging of another embodiment of the present invention
The structure of element.The anti-aliasing image-forming component 28 includes the light-absorption layer 283 and clear support layer 284 of alternately laminated setting, and often
The thickness of layer clear support layer 284 is unequal.That is the value of thickness h 1, h2 and h3 is unequal in Figure 14.Alternatively, the transparent support
The thickness of layer 284 successively increases, i.e. h1<h2<h3.The light beyond ± 20 ° can be so deviated to avoid opposed substrate vertical direction
Clear support layer 284 of the signal through extinction block 283a, so as to improve the sensing precision of photoelectric sensor device 20.Need
Illustrate, the thickness parameter of every layer of clear support layer 284, and the width and height parameter of extinction block 283a, it can carry out not
Same setting and a variety of setting combinations, to improve the sensing precision of photoelectric sensor device 20.
In some embodiments, anti-aliasing image-forming component 28 is formed directly on photosensitive nude film 24, i.e., above-mentioned anti-aliasing
The carrier during formation of image-forming component 28 is the photosensitive nude film 24 equipped with photosensitive pixel 22.So, ground, the anti-aliasing imaging are changed
Element 28 is arranged on the photosensitive nude film 24 equipped with photosensitive pixel 22 again after being for example separately made, so as to accelerate photoelectric sensing dress
Put 20 processing procedure.
In some embodiments, multiple transmission regions 282 are uniformly distributed in anti-aliasing image-forming component 28, so that anti-
The preparation process of aliasing image-forming component 28 is simpler.Moreover, the anti-aliasing image-forming component 28 may be, for example, integrally formed film,
Fitted in again after being separately made on photosensitive nude film 24, so as to accelerate the processing procedure of photoelectric sensor device 20.
In some embodiments, filter coating 23 may be disposed between photosensitive pixel 22 and anti-aliasing image-forming component 28,
It can be arranged on anti-aliasing image-forming component 28, i.e., filter coating 23 is arranged on one of anti-aliasing image-forming component 28 away from photosensitive pixel 22
End.
In some embodiments, in order to further improve the sensing precision of photoelectric sensor device 20, can also select pair
The high sensor devices 220 of the luminous sensitivity of blue light signal.It is high to the optical signal luminous sensitivity for presetting wave band by selecting
Sensor devices 220 perform light sensing so that the sensor devices 220 are photosensitive sensitiveer to the optical signal for presetting wave band, therefore one
Determine to it also avoid interference caused by red light signal in ambient light in degree, so as to improve the sensing essence of photoelectric sensor device 20
Degree.
Figure 15 is refer to, Figure 15 shows the structure of the photoelectric sensor device of another embodiment of the present invention.On substrate 26
Such as the scanline groups and data line group being electrically connected with photosensitive pixel 22 are also formed with, scanline groups are used for transmission turntable driving
Signal performs light sensing, data line group is used to photosensitive pixel performing light sensing to photosensitive pixel 22 to activate photosensitive pixel 22
And the electric signal output produced.The substrate 26 is such as, but not limited to silicon substrate etc..
Specifically, Figure 15 is continued referring to, photosensitive pixel 22 is in array distribution, such as matrix distribution.It is of course also possible to it is
Other regular fashions are distributed or non-regular distribution.Scanline groups include multi-strip scanning line 201, and data line group includes a plurality of number
According to line 202, multi-strip scanning line 201 and a plurality of data lines 202 intersect setting, and be arranged on adjacent photosensitive pixel 22 it
Between.For example, multi-strip scanning line G1, G2 ... Gm is laid along Y-direction interval, and a plurality of data lines S1, S2 ... Sn is spaced cloth in X direction
If.So, ground is changed, which does not limit being vertically arranged of being shown in Fig. 1 with a plurality of data lines 202, can also
Setting at an angle, such as 30 °, 60 ° etc..Further, since scan line 201 and the electric conductivity of data cable 202, therefore be in
Isolated between the scan line 201 and data cable 202 of crossover location by insulating materials.
It should be noted that above-mentioned scan line 201 and the distribution of data cable 202 and the setting of quantity are not limited to
An illustrative embodiments is stated, corresponding scanline groups and data cable can be correspondingly arranged according to the difference of the structure of photosensitive pixel
Group.
Further, multi-strip scanning line 201 is all connected with one drive circuit 25, and a plurality of data lines 202 is all connected with a signal
Manage circuit 27.Drive circuit 25 is used to provide corresponding scanning drive signal, and is transferred to accordingly by corresponding scan line 201
Photosensitive pixel 22, with activate the photosensitive pixel 22 perform light sensing.The drive circuit 25 is formed on substrate 26, also may be used certainly
To be electrically connected by flexible PCB and photosensitive pixel 22, that is, connect multi-strip scanning line 201.Signal processing circuit 27 passes through number
The electric signal for receiving the corresponding execution light sensing of photosensitive pixel 22 according to line 202 and producing, and target is obtained according to the electric signal
The biological information of object.
In some embodiments, photoelectric sensor device 20 further includes a controller 29, which, which is used to control, drives
The corresponding scanning drive signal of dynamic circuit output, such as, but not limited to activates photosensitive pixel 22 and performs light sensing line by line.The control
Device 29 processed is additionally operable to control signal process circuit 27 and receives the electric signal that photosensitive pixel 22 exports, and performs light sensing receiving
After the electric signal that all photosensitive pixels 22 export, the image of target object is generated according to the electric signal.
Further, above-mentioned signal processing circuit 27 and controller 29 may be formed on substrate 26, can also pass through flexibility
Circuit board is electrically connected with photosensitive pixel 22.
In some embodiments, as shown in figure 16, Figure 16 shows the photosensitive pixel 22 of an embodiment of the present invention
Circuit structure.The photosensitive pixel 22 includes a sensor devices 220 and a switching device 222.The switching device 222 has a control
Hold C and two signal ends, such as the first signal end Sn1 and secondary signal end Sn2.Wherein, the control terminal C of switching device 222 with
Scan line 201 connects, and the first signal end Sn1 of switching device 222 connects a reference signal L, switching device through sensor devices 220
222 secondary signal end Sn2 is connected with data cable 202.
Specifically, above-mentioned sensor devices 220 are such as, but not limited to photodiode, phototriode, photodiode, light
Resistance, thin film transistor (TFT) any one or it is several.Switching device 222 is such as, but not limited to triode, metal-oxide-semiconductor, film crystal
In pipe any one or it is several.It should be noted that the photosensitive pixel 22 shown in Figure 16 is only used for illustrating, however it is not limited to
The other structures of photosensitive pixel 22.For example, sensor devices 220 can also include other kinds of device, quantity can also be 2
It is a, 3 etc..Switching device 222 can also include other kinds of device, and quantity can also be 2,3 etc..
By taking 22 structure of photosensitive pixel shown in Figure 16 as an example, the grid of thin film transistor (TFT) TFT is as switching device 222
The source electrode of control terminal C, thin film transistor (TFT) TFT and the first signal end Sn1 and secondary signal to drain to should be used as switching device 222
Hold Sn2.The grid of thin film transistor (TFT) TFT is connected with scan line 201, and the source electrode of thin film transistor (TFT) TFT is with photodiode D1's
Anode connects, and the drain electrode of thin film transistor (TFT) TFT is connected with data cable 202.The cathode connection reference signal L of photodiode D1,
Reference signal L is, for example, earth signal or negative voltage signal.
When above-mentioned photosensitive pixel 22 performs light sensing, apply one by grid of the scan line 201 to thin film transistor (TFT) TFT
Drive signal, to drive thin film transistor (TFT) TFT to turn on.At this time, data cable 202 connects a positive voltage signal, works as thin film transistor (TFT)
After TFT conductings, the positive voltage signal on data cable 202 applies to the anode of photodiode D1 through thin film transistor (TFT) TFT, due to
The plus earth of photodiode D1, therefore photodiode D1 both ends will apply a backward voltage so that photodiode D1
It is in reverse bias, i.e., in running order.At this time, when there is optical signal to be irradiated to photodiode D1, photodiode
The reverse current of D1 increases rapidly, so as to cause the curent change on photodiode D1, the electric current of the change can be from data
Obtained on line 202.Since the intensity of optical signal is bigger, the reverse current of generation is also bigger, therefore is obtained according on data cable 202
The current signal arrived, can obtain the intensity of optical signal, and then obtain the biological information of target object.
In some embodiments, above-mentioned reference signal L can be positive voltage signal, negative voltage signal, earth signal etc..Only
The electric signal for wanting to provide on data cable 202 is applied to photodiode D1 both ends with reference signal L so that photodiode D1
Both ends form backward voltage, to perform light sensing, in the protection domain that the present invention limits.
It is understood that the connection mode of thin film transistor (TFT) TFT and photodiode D1 is simultaneously in above-mentioned photosensitive pixel 22
It is not limited to the connection mode shown in Figure 16, or other connection modes.For example, as shown in figure 17, show the present invention
The circuit structure of the photosensitive pixel of another embodiment.The grid G of thin film transistor (TFT) TFT is connected with scan line 201, film crystal
The drain D of pipe TFT is connected with the cathode of photodiode D1, and the source S of thin film transistor (TFT) TFT is connected with data cable 202.Photoelectricity
The anode connection positive voltage signal of diode D1.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
The description of mode ", " example ", " specific example " or " some examples " etc. means with reference to the embodiment or example description
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the present invention.In this specification
In, schematic expression of the above terms is not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can combine in an appropriate manner in any one or more embodiments or example.
In addition, term " first ", " second " are only used for description purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the present invention, " multiple " are meant that at least two, such as two, three
It is a etc., unless otherwise specifically defined.
Although embodiments of the present invention have been shown and described above, it is to be understood that the above embodiment is
Exemplary, it is impossible to limitation of the present invention is interpreted as, those of ordinary skill in the art within the scope of the invention can be right
The above embodiment is changed, changes, replacing and modification.
Claims (21)
1. a kind of electronic equipment, it is characterised in that：Photoelectric sensing dress including a display screen and below the display screen
Put, the display screen includes multiple display pixels, and the photoelectric sensor device includes substrate and is arranged at more on the substrate
A photosensitive pixel, and the photosensitive pixel is correspondingly arranged with the display pixel.
2. electronic equipment as claimed in claim 1, it is characterised in that：The display screen is OLED display screen.
3. electronic equipment as claimed in claim 1, it is characterised in that：The photosensitive pixel includes an at least sensor devices, and
The sensor devices are located at below the display pixel.
4. electronic equipment as claimed in claim 3, it is characterised in that；The light emission side of the display screen is equipped with CF films, described
CF films include red, green and blue three kinds of photoresists, and the optical signal for display pixel to be sent is filtered, is correspondingly formed
Red, green and blue three kinds of optical signals；The sensor devices are located at the corresponding display pixel of the blue light resistance and/or described
Below the corresponding display pixel of green photoresist.
5. electronic equipment as claimed in claim 3, it is characterised in that：The display pixel includes red, green, three kinds of blueness
Display pixel.
6. electronic equipment as claimed in claim 5, it is characterised in that：The display screen further comprises and the display pixel
Corresponding microresonator structure；The sensor devices are located at below the red display pixel.
7. electronic equipment as claimed in claim 6, it is characterised in that：The sensor devices are also located at the blue display pixels
Or below green display pixels, and the sensor devices are equipped with filter coating, the filter coating is used for beyond default wave band
Optical signal is filtered, and the setting of the default wave band is with the different and different of the placement location of the sensor devices.
8. electronic equipment as claimed in claim 5, it is characterised in that：The sensor devices are positioned at red, green, blueness display
It is any one or more in pixel；The sensor devices are equipped with filter coating, and the filter coating is used for beyond default wave band
Optical signal filtered.
9. electronic equipment as claimed in claim 1, it is characterised in that：The electronic equipment further comprises cover sheet, institute
Cover sheet is stated to be located above the display screen.
10. electronic equipment as claimed in claim 1, it is characterised in that：The photoelectric sensor device is a sensitive chip, is used for
Sense biological information.
11. electronic equipment as claimed in claim 10, it is characterised in that：The middle bottom of the display screen has installed one and has supplied target
The sensing region that object touches, the photoelectric sensor device are corresponded to below the sensing region.
12. electronic equipment as claimed in claim 1, it is characterised in that：The photoelectric sensor device further comprises anti-aliasing
Image-forming component, the anti-aliasing image-forming component are located on the photosensitive pixel, for preventing from receiving between adjacent photosensitive pixel
The optical signal arrived produces aliasing.
13. electronic equipment as claimed in claim 12, it is characterised in that：The anti-aliasing image-forming component include extinction wall and
By extinction walled into multiple transmission regions.
14. electronic equipment as claimed in claim 13, it is characterised in that：The multiple transmission region is uniformly distributed.
15. electronic equipment as claimed in claim 13, it is characterised in that：The extinction wall includes multiple alternately laminated settings
Extinction block and keel.
16. electronic equipment as claimed in claim 15, it is characterised in that：The keel is made of transparent material.
17. electronic equipment as claimed in claim 13, it is characterised in that：Filling transparent material in the transmission region.
18. electronic equipment as claimed in claim 12, it is characterised in that：The anti-aliasing image-forming component includes multilayer alternating layer
The folded light-absorption layer set and clear support layer；The light-absorption layer includes multiple spaced extinction blocks；The clear support layer
Filled and formed by transparent material, and fill the interval between the extinction block in the lump；The wherein corresponding region in the interval is formed
The transmission region.
19. electronic equipment as claimed in claim 18, it is characterised in that：The thickness of each layer of clear support layer not phase
Deng.
20. electronic equipment as claimed in claim 19, it is characterised in that：The thickness of the clear support layer successively increases.
21. electronic equipment as claimed in claim 1, it is characterised in that：The photoelectric sensor device is fingerprint sensing device.
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| CN201710708278.8A CN107957747B (en) | 2017-08-17 | 2017-08-17 | Electronic device |
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| CN107957747B (en) | 2022-02-01 |
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