CN107957747B

CN107957747B - Electronic device

Info

Publication number: CN107957747B
Application number: CN201710708278.8A
Authority: CN
Inventors: 李问杰
Original assignee: Liuzhou Zibo Technology Co ltd
Current assignee: Liuzhou Zibo Technology Co.,Ltd.
Priority date: 2017-08-17
Filing date: 2017-08-17
Publication date: 2022-02-01
Anticipated expiration: 2037-08-17
Also published as: CN107957747A

Abstract

The invention discloses an electronic device, which comprises a display screen and a photoelectric sensing device positioned below the display screen, wherein the display screen comprises a plurality of display pixels, the photoelectric sensing device comprises a substrate and a plurality of photosensitive pixels arranged on the substrate, and the photosensitive pixels and the display pixels are arranged correspondingly.

Description

Electronic device

Technical Field

The present invention relates to an electronic device capable of sensing biometric information.

Background

At present, a biological information sensor, especially a fingerprint sensor, has gradually become a standard component of electronic products such as mobile terminals. Because optical fingerprint identification sensor has stronger penetrability than capacitanc fingerprint identification sensor, consequently someone proposes an optical fingerprint identification module who is applied to mobile terminal. As shown in fig. 1, the optical fingerprint recognition module includes an optical fingerprint sensor 400 and a light source 402. The optical fingerprint sensor 400 is disposed under a protective cover 401 of the mobile terminal. The light source 402 is disposed adjacent to one side of the optical fingerprint recognition sensor 400. When the finger F of the user touches the protective cover 401, the light signal emitted from the light source 402 passes through the protective cover 401 and reaches the finger F, is reflected by the valleys and ridges of the finger F, and is received by the optical fingerprint recognition sensor 400, and forms a fingerprint image of the finger F.

However, the optical fingerprint recognition module can only be limited to be disposed in the non-display area of the mobile terminal, and therefore, it is necessary to provide a fingerprint recognition structure that can be disposed in the display area.

Disclosure of Invention

The embodiment of the invention aims to solve at least one technical problem in the prior art. Therefore, the embodiment of the invention needs to provide an electronic device.

The electronic equipment comprises a display screen and a photoelectric sensing device positioned below the display screen, wherein the display screen comprises a plurality of display pixels, the photoelectric sensing device comprises a substrate and a plurality of photosensitive pixels arranged on the substrate, and the photosensitive pixels and the display pixels are arranged correspondingly.

According to the electronic equipment provided by the embodiment of the invention, the photoelectric sensing device is arranged below the display screen, so that the biological characteristic information sensing of the target object in the display area of the electronic equipment is realized, and the biological characteristic information sensing of the target object is realized by utilizing the optical signal emitted by the display screen, so that an additional light source is not required to be arranged, and the biological characteristic information sensing cost of the electronic equipment is reduced. Moreover, the photoelectric sensing device is positioned below the display screen, so that the normal display of the electronic equipment is not influenced.

In addition, because the photoelectric sensing device is arranged below the display screen of the electronic equipment, the biological characteristic information of the target object is obtained from the front side of the electronic equipment, the screen occupation ratio of the front side of the electronic equipment can be large enough, and the development of the electronic equipment towards the full-screen display direction is facilitated.

In some embodiments, the display screen is an OLED display screen.

In some embodiments, the photosensitive pixel includes at least one photosensitive device, and the photosensitive device is correspondingly located below the display pixel.

In some embodiments, a CF film is disposed on a light-emitting side of the display screen, and the CF film includes three types of light resistors, namely red, green, and blue, and is used for filtering a white light signal emitted by a display pixel to correspondingly form three types of light signals, namely red, green, and blue; the photosensitive device is located below the blue display pixel corresponding to the blue light resistance and/or the green display pixel corresponding to the green light resistance.

Because the display panel is provided with the CF film, each display pixel correspondingly emits three optical signals of red, green and blue, and the optical signals reflected by the target object are correspondingly obtained after being filtered by the CF film. When the ambient light is irradiated onto the target object, such as a finger, the red ambient light will penetrate the target object, and the blue and green ambient light will be absorbed by the target object. Therefore, the photosensitive units are positioned below the blue display pixels and the green display pixels, so that the interference of ambient light can be eliminated, and the sensing precision of the photoelectric sensing device on a target object is improved.

In some embodiments, the display pixels comprise red, green, and blue display pixels.

In some embodiments, the display screen further comprises a micro-resonant cavity structure corresponding to the display pixels; the photosensitive device is located below the red display pixels.

Because the display screen has the micro-resonant cavity structure, when the light signal reflected by the target object passes through the display pixel, the red light signal is reflected by the micro-resonant cavity structure at the red display pixel and emitted from the light-emitting side, and only the blue and green light signals pass through the red display pixel, so that the interference of the red light signal penetrating through the target object in the ambient light can be effectively avoided by positioning the photosensitive device below the red display pixel, and the sensing precision of the photoelectric sensing device is improved.

In some embodiments, the photosensitive device is further located below the blue display pixel or the green display pixel, and a filter is disposed on the photosensitive device, the filter is configured to filter light signals outside a preset wavelength band, and the setting of the preset wavelength band is different according to different placement positions of the photosensitive device.

In some embodiments, the light sensing device is located in any one or more of the red, green, and blue display pixels; the light filter film is arranged on the photosensitive device and used for filtering light signals outside a preset wave band.

According to the embodiment of the invention, the light transmittance of the display pixels is utilized, and the photosensitive device is positioned below the display pixels, so that the photosensitive area of the photosensitive device can be set to be large enough, the biological characteristic information sensing can be realized by utilizing the existing display screen structure, the preparation cost of electronic equipment is reduced, sufficient optical signals in the optical signals passing through the display pixels are ensured to be received by the photosensitive device, and the sensing precision of the photoelectric sensing device is improved. In addition, the filter film is arranged, so that corresponding interference signals are filtered, and the sensing precision of the photoelectric sensing device is further improved.

In some embodiments, the electronic device further comprises a protective cover positioned over the display screen.

In some embodiments, the optoelectronic sensing device is a light sensing chip for sensing biometric information.

In some embodiments, a sensing area for a target object to touch is disposed at a middle-lower position of the display screen, and the photoelectric sensing device is correspondingly disposed below the sensing area. Therefore, the operation of the user is convenient.

In some embodiments, the optoelectronic sensing device further includes an anti-aliasing imaging element located on the photosensitive pixel for preventing aliasing of received optical signals between adjacent photosensitive pixels.

Because the reflection of the optical signals at different parts of the target object is different, and the optical signals sensed between the adjacent photosensitive units can be aliased, so that the acquired sensed image is fuzzy, the embodiment of the invention prevents the optical signals received by the adjacent photosensitive pixels from being aliased by arranging the anti-aliasing imaging element on the photosensitive pixels, and improves the sensing precision of the photoelectric sensing device.

In some embodiments, the plurality of light transmissive regions are uniformly distributed. The uniformly distributed light transmission areas enable the preparation process of the anti-aliasing imaging element to be simpler.

In some embodiments, the light absorbing wall includes a plurality of light absorbing blocks and block-up blocks alternately stacked. Because the thickness of each light absorption block is smaller than that of the light absorption wall, the process of etching the light transmission region is relatively easy, so that the process of the anti-aliasing imaging element is easy, and the light transmission performance of the light transmission region can be ensured. In addition, the light absorption wall is formed by the stacking of the heightening block and the light absorption block, so that the manufacturing process of the anti-aliasing imaging element is accelerated, and the anti-aliasing effect of the anti-aliasing imaging element is ensured.

In some embodiments, the raised block is made of a transparent material.

In some embodiments, the light-transmissive region is filled with a transparent material. Transparent materials are filled in the light transmission area, so that the strength of the anti-aliasing imaging element is increased, and the influence of impurities in the light transmission area on the light transmission effect can be avoided.

In certain embodiments, the anti-aliasing imaging element comprises a plurality of alternating layers of light absorbing and transparent support layers disposed in a stack; the light absorption layer comprises a plurality of light absorption blocks arranged at intervals; the transparent supporting layer is formed by filling transparent materials and also fills the intervals among the light absorption blocks; wherein the region corresponding to the space forms the light-transmitting region.

In certain embodiments, the thickness of each of the transparent support layers is not equal. Through the arrangement of the transparent supporting layer, the preparation speed of the anti-aliasing imaging element is accelerated, and the anti-aliasing effect of the anti-aliasing imaging element can be ensured through the arrangement of the distance between the two adjacent light absorption layers.

In certain embodiments, the thickness of the transparent support layer increases from layer to layer.

Through the thickness setting of the transparent supporting layer, the optical signal which is deviated from the vertical direction of the photosensitive bare chip outside the preset angle range is prevented from passing through the anti-aliasing imaging element, and therefore the anti-aliasing effect of the anti-aliasing imaging element is improved.

In some embodiments, the optoelectronic sensing device is a fingerprint sensing device.

Additional aspects and advantages of embodiments of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the invention.

Drawings

The above and/or additional aspects and advantages of embodiments of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic diagram of an optical biometric information sensing arrangement applied to an electronic device in the prior art;

fig. 2 is a schematic front structural view of an optoelectronic sensing device according to an embodiment of the present invention applied to an electronic device;

FIG. 3 is a schematic cross-sectional view of the electronic device of FIG. 2 along line I-I, wherein only a portion of the electronic device is shown;

FIG. 4 is a partially enlarged schematic view of the display screen and the photo sensor device in the electronic device shown in FIG. 3 in area A;

FIG. 5 is a schematic diagram of a display screen according to an embodiment of the present invention;

FIG. 6 is a schematic diagram of a partial structure of an electronic device according to an embodiment of the invention;

FIG. 7 is a schematic diagram of a partial structure of an electronic device according to another embodiment of the invention;

FIG. 8 is a schematic diagram of a partial structure of an electronic device according to yet another embodiment of the invention;

FIG. 9 is a schematic structural diagram of an optoelectronic sensing device in accordance with an embodiment of the present invention;

FIG. 10 is a schematic diagram of the range of optical signals that can be passed through by the anti-aliasing imaging component of one embodiment of the optoelectronic sensing device shown in FIG. 9;

FIG. 11 is a schematic diagram of a partial structure of an anti-aliasing imaging element according to an embodiment of the invention;

FIG. 12 is a schematic diagram of a partial structure of an anti-aliasing imaging element according to another embodiment of the invention;

FIG. 13 is a schematic illustration of a process for making the anti-aliasing imaging element of FIG. 11;

FIG. 14 is a partial structural schematic diagram of an anti-aliasing imaging element according to yet another embodiment of the invention;

FIG. 15 is a schematic structural diagram of an optoelectronic sensing device in accordance with another embodiment of the present invention;

FIG. 16 is a schematic diagram of a circuit configuration of a light-sensitive pixel in accordance with one embodiment of the present invention;

fig. 17 is a circuit diagram of a light-sensing pixel in accordance with another embodiment of the present invention.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.

In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. "contact" or "touch" includes direct contact or indirect contact. For example, the photoelectric sensing device disclosed hereinafter, which is disposed inside the electronic apparatus, for example, below the display screen, indirectly contacts the photoelectric sensing device with the user's finger through the protective cover and the display screen.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and settings of a specific example are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or reference letters in the various examples, which have been repeated for purposes of simplicity and clarity and do not in themselves dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.

Further, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention can be practiced without one or more of the specific details, or with other structures, components, and so forth. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring the invention.

The embodiment of the invention provides a photoelectric sensing device arranged in electronic equipment, in particular to a photoelectric sensing device arranged below a display screen of the electronic equipment. Such as, but not limited to, OLED display panels and the like, have display devices that emit light signals. When the electronic equipment works, the display screen sends out optical signals to realize corresponding display effect. At this time, if a target object touches the electronic device, the optical signal emitted by the display screen is reflected after reaching the target object, the reflected optical signal passes through the display screen and is received by the photoelectric sensing device, and the photoelectric sensing device converts the received optical signal into an electrical signal corresponding to the optical signal. According to the electric signal generated by the photoelectric sensing device, the preset biological characteristic information of the target object can be obtained.

The electronic device may be, for example, but not limited to, a consumer electronic product, a home electronic product, a vehicle-mounted electronic product, a financial terminal product, or other suitable type of electronic product. The consumer electronic products include mobile phones, tablet computers, notebook computers, desktop displays, all-in-one computers, and the like. The household electronic products are intelligent door locks, televisions, refrigerators, wearable equipment and the like. The vehicle-mounted electronic products are vehicle-mounted navigators, vehicle-mounted DVDs and the like. The financial terminal products are ATM machines, terminals for self-service business handling and the like. The following embodiments are described by taking a mobile terminal of a mobile phone type as an example, but as described above, the following embodiments can also be applied to other suitable electronic products, and are not limited to the mobile terminal of the mobile phone type.

The predetermined biometric information (or image information) of the target object is, for example, but not limited to, skin texture information such as fingerprints, palm prints, ear prints, and sole prints, and other suitable biometric information such as heart rate, blood oxygen concentration, veins and arteries. The predetermined biometric information may be any one or more of the aforementioned listed information. The target object is, for example, but not limited to, a human body, but may be other suitable types of organisms.

Referring to fig. 2 and fig. 3, fig. 2 shows a front structure of an embodiment of an electronic device to which the photoelectric sensing apparatus of the present invention is applied, fig. 3 shows a partial cross-sectional structure of the electronic device in fig. 2 along the line I-I, and fig. 3 only shows a partial structure of the electronic device. The photoelectric sensing device 20 of the embodiment of the invention is applied to a mobile terminal 100, a display screen 10 is arranged on the front surface of the mobile terminal 100, and a protective cover plate 30 is arranged above the display screen 10. Optionally, the screen content of the display screen 10 is high, for example, more than 80%. The screen occupation ratio refers to a ratio of the display area S1 of the display screen 10 to the front area of the mobile terminal 100. The photoelectric sensing device 20 is correspondingly disposed below the display screen 10, and is correspondingly disposed in a partial area of the display area S1 of the display screen 10. The area of the front surface of the mobile terminal 100 corresponding to or facing the photo sensor device 20 is defined as a sensing region S2. The photo sensor device 20 is used to sense predetermined biometric information of a target object touching or proximate to the sensing region S2.

The sensing region S2 can be any position on the display region. For example, the sensing region S2 is disposed at a middle-lower position corresponding to the display region of the display screen 10. It is understood that the sensing region S2 is disposed at a middle-lower position corresponding to the display screen 10 for the convenience of the user. For example, when a user holds a cell phone, the user' S thumb may facilitate touching the location of the sensing region S2. Of course, the sensing region S2 may be placed at other suitable locations where a user may conveniently touch.

When the mobile terminal 100 is in a bright screen state and in the biometric information sensing mode, the display screen 10 emits an optical signal. When a user contacts or approaches the sensing region S2, the photo sensor device 20 receives light reflected by the user, converts the received light into a corresponding electrical signal, and obtains predetermined biometric information of the user, for example, fingerprint image information, according to the electrical signal. Thus, the photoelectric sensing apparatus 20 can sense a target object touching or approaching a local area above the display area.

Referring to fig. 4, the photo-sensing device 20 includes a substrate 26 and a plurality of photosensitive pixels 22 disposed on the substrate 26, and the display screen 10 includes a plurality of display pixels 12. Alternatively, in one embodiment, the light-sensing pixels 22 are disposed in correspondence with the display pixels 12. Of course, the light-sensing pixels 22 under the display screen 10 are not limited to be disposed corresponding to the display pixels 12, and may be disposed in other manners. Since the photoelectric sensing device 20 uses the optical signal emitted by the display screen 10 as a light source, after the optical signal emitted by the display screen 10 reaches a finger, the optical signal reflected by the finger will pass through the display screen 10 and be received by the photoelectric sensing device 20, and therefore, the display screen 10 has a corresponding light-transmitting area, and the photosensitive pixels 22 are aligned to the light-transmitting area, so that sufficient optical signal can be sensed, and effective light sensing is performed.

Specifically, referring to fig. 5, taking the display screen 10 as an OLED display screen of an embodiment as an example, the display screen 10 further includes a transparent substrate 101. The display pixel 12 includes an anode 102 formed on a transparent substrate 101, a light-emitting layer 103 formed on the anode 102, and a cathode 104 formed on the light-emitting layer 103. When a voltage signal is applied to the anode 102 and the cathode 104, a large number of carriers accumulated on the anode 102 and the cathode 104 will move to the light-emitting layer 103 and enter the light-emitting layer 103, so as to excite the light-emitting layer 103 to emit a corresponding light signal.

In certain embodiments, the anode 102 and cathode 104 are made of an electrically conductive material. For example, the anode 102 is made of a suitable conductive material such as Indium Tin Oxide (ITO), and the cathode 104 is made of a suitable conductive material such as metal or ITO. The display screen 10 is not limited to an OLED display screen and may be any other suitable type of display screen. In addition, the display screen 10 may be a rigid screen made of a rigid material, or may be a flexible screen made of a flexible material. Also, the OLED display panel of the embodiments of the present invention may be a bottom emission type device, a top emission type device, or other suitable structural type display device.

Further, the display pixel 12 includes three display pixels, i.e., a red pixel R, a green pixel G and a blue pixel B, wherein the light signal emitted from the red pixel R is a red light signal, the light signal emitted from the green pixel G is a green light signal, and the light signal emitted from the blue pixel B is a blue light signal. Of course, the display pixels 12 may also include black pixels, white pixels; or a red pixel, a green pixel, a blue pixel, a white pixel, etc.

In some embodiments, please refer to fig. 4 and fig. 6 in combination, and fig. 6 shows a partial structure of an electronic device according to an embodiment of the present invention. Each photosensitive pixel 22 includes at least one photosensitive device 220, and the photosensitive device 220 is configured to receive a light signal and convert the received light signal into a corresponding electrical signal. Therefore, the light sensing device 220 is located below the display pixel 12, and by utilizing the light transmittance of the display pixel, receives the light signal reflected by the target object and passing through the display pixel, and performs the sensing of the biological characteristic information of the target object. In addition, since the light sensing device 220 is disposed below the display pixel 12, the light sensing surface of the light sensing device 220 may be equal to the area of the display pixel 12, which can be implemented by using the existing display screen structure, thereby reducing the manufacturing cost of the electronic device, ensuring that enough light signals in the light signals passing through the display pixel are received by the light sensing device 220, and improving the sensing accuracy of the photoelectric sensing apparatus 20.

In some embodiments, the light sensing device 220 is located below any one or more of the three display pixels red, blue, and green, and by being located below the display pixels 12, it is possible to ensure that more light signals are received by the light sensing device 220. The light sensing device 220 is located below the blue display pixel B, as shown in fig. 6, for example. In addition, in order to prevent interference of other optical signals, a filter 23 may be disposed on the light sensing device 220. The filter 23 is used for filtering light signals outside a predetermined wavelength band. For example, if all the optical signals other than the blue light signal are interference signals, a blue filter is provided to filter the optical signals other than the wavelength band corresponding to the blue light signal. It should be noted that, because the photoelectric sensing device 20 is disposed below the display screen 10, the filter 23 can be independently disposed and then attached to the photosensitive die 24, so that the preparation process of the filter 23 is simpler.

Referring to fig. 7, fig. 7 shows a partial structure of an electronic device according to another embodiment of the invention. In this embodiment, the light emitting layers 103 of the display pixels 12 all emit white light, and the light emitting side of the display pixels 12 is provided with a CF film 105, and the CF film 105 is used for filtering the white light emitted by the display pixels 12 to form three light signals of red, green and blue. Specifically, the CF film 105 includes three kinds of photo-resists, i.e. three kinds of photo-resists corresponding to three kinds of display pixels are set as red, green and blue, and when the white light emitted from the light emitting layer 103 passes through the CF film 105, red, green and blue light signals are emitted. In other words, when the light signal reflected by the target passes through the display screen 10, the red light signal is filtered out when passing through the blue or green light-blocking layer of the CF film 105. Therefore, the light sensing device 220 in the light sensing pixel 22 is disposed right under the display pixel corresponding to the blue photoresist and/or the display pixel corresponding to the green photoresist, so that the influence of the interference signal can be eliminated, and the sensing accuracy of the photoelectric sensing apparatus 20 can be improved.

Referring to fig. 8, fig. 8 shows a partial structure of an electronic device according to another embodiment of the present invention, in order to enhance the intensity of the optical signal emitted from the display pixel, the display pixel is provided with a corresponding micro-resonant cavity structure 106, the micro-resonant cavity structure 106 generates a micro-resonance effect on the optical signal with a specific wavelength, so that the optical signal with the specific wavelength is enhanced in the emission direction, and the optical signals with wavelengths other than the specific wavelength can pass through the micro-resonant cavity structure 106. For example, the micro-cavity structure corresponding to the red display pixel R can enhance the emitted red light signal, and the rest of the light signal passes through the micro-cavity structure 106. In other words, when the light signal reflected by the target object passes through the red display pixel R, if there is a red light signal in the light signal, the red light signal will be reflected back, and the rest of the light signal passes through the red display pixel R and is received by the light sensing device 220, so that the light sensing device 220 in the light sensing pixel 22 is disposed right below the red display pixel R, and the red light signal passing through the target object in the ambient light can be effectively filtered, thereby improving the sensing accuracy of the photo-sensor apparatus 20.

Further, the light sensing device 200 is also disposed under the green display pixel G or the blue display pixel B. Correspondingly, the light sensing device 220 is provided with a filter film, the filter film is used for filtering light signals outside a preset waveband, and the setting of the preset waveband is different according to the different placement positions of the light sensing device 220. Specifically, if the light sensing device 220 is disposed below the green display pixel G, the red and blue light signals in the light signal reflected by the target object will pass through the green display pixel, and thus the disposed filter is used to filter the light signals other than the blue light signal, so that the light sensing device 220 only receives the blue light signal. Similarly, if the photo sensor device 220 is disposed below the red display pixel R and the blue display pixel B, the filter 23 is used for filtering light signals other than the green light signals, so that the photo sensor device 220 only receives the green light signals.

In some embodiments, referring to fig. 9, fig. 9 shows a structure of a photoelectric sensing apparatus according to an embodiment of the present invention. In the embodiment of the present invention, the photo-sensing device 20 includes a photo-sensing die 24, and the photo-sensing die 24 includes a substrate 26 and a plurality of photo-sensing pixels 22 disposed on the substrate 26. The photosensitive pixels 22 are configured to receive the light signals from above and convert the received light signals into corresponding electrical signals. An anti-aliasing imaging component 28 is disposed on the photosensitive die 24, and the anti-aliasing imaging component 28 is used for preventing aliasing of optical signals received between adjacent photosensitive pixels 22.

Because the reflection of the optical signal at different parts of the target object is different, and the surface of the target object is uneven, some parts of the target object are in contact with the protective cover plate 30 (see fig. 3), some parts of the target object are not in contact with the protective cover plate 30, so that the contact position is subjected to diffuse reflection, and the non-contact position is subjected to specular reflection, the optical signal sensed between the adjacent photosensitive pixels 22 can be subjected to aliasing, and the acquired sensed image is blurred. In this regard, the embodiment of the present invention arranges the anti-aliasing imaging element 28 on the photosensitive die 24, so that the image obtained after the photosensitive pixels 22 perform the photo sensing is clearer, thereby improving the sensing accuracy of the photo sensing apparatus 20.

In some embodiments, the anti-aliasing imaging component 28 has light absorbing properties, and of the light signals impinging on the anti-aliasing imaging component 28, only light signals approximately perpendicular to the photosensitive die 24 can pass through the anti-aliasing imaging component 28 and be received by the photosensitive pixels 22, and the rest of the light signals are absorbed by the anti-aliasing imaging component 28. In this manner, aliasing of the received optical signals between adjacent photosensitive pixels 22 can be prevented. It should be noted that the optical signal approximately perpendicular to the photosensitive die 24 includes an optical signal perpendicular to the photosensitive die 24 and an optical signal within a predetermined angle offset from the perpendicular direction of the photosensitive die 24. The preset angle range is within ± 20 °.

Specifically, the anti-aliasing imaging element 28 includes a light absorbing wall 281 and a plurality of light transmitting regions 282 surrounded by the light absorbing wall 281. The light absorbing walls 281 are formed of a light absorbing material. The light absorbing material includes metal oxides, carbon black paint, black ink, and the like. The metal in the metal oxide is, for example, but not limited to, one or more of chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), and molybdenum (Mo). The light-transmitting region 282 extends in a direction perpendicular to the photosensitive die 24, so that, of the light signals irradiated to the anti-aliasing imaging element 28, the light signals in a direction approximately perpendicular to the photosensitive die 24 can pass through the light-transmitting region 282, and the rest of the light signals are absorbed by the light-absorbing wall 281.

In some embodiments, as shown in FIG. 10, FIG. 10 illustrates the range of the optical signal passing through the anti-aliasing imaging element 28. Due to the light absorption characteristics of the anti-aliasing imaging element 28, only the light signal between the light signal L1 and the light signal L2 can reach the photosensitive pixel 22 through the light-transmitting region 282, and the rest of the light signal is absorbed by the light-absorbing wall 281 of the anti-aliasing imaging element 28. As can be seen from fig. 10, the smaller the cross-sectional area of the light-transmitting region 282, the smaller the range of the angle α of the optical signal passing through the light-transmitting region 282, and therefore the better the anti-aliasing effect of the anti-aliasing imaging element 28. In this way, the anti-aliasing effect of the anti-aliasing imaging element 28 can be improved by the small-area light-transmitting region 282 provided for the anti-aliasing imaging element 28. In addition, since the cross-sectional area of the light-transmitting region 282 of the anti-aliasing imaging element 28 is small, each photosensitive pixel 22 corresponds to a plurality of light-transmitting regions 282, so that the photosensitive pixel 22 can sense sufficient light signals, and the sensing accuracy of the photoelectric sensing device 20 is improved.

Further, referring to fig. 11, fig. 11 shows a structure of the anti-aliasing imaging element 28 according to an embodiment of the invention. The light absorption wall 281 has a multi-layer structure, and includes light absorption blocks 281a and block elevations 281b alternately stacked. In one embodiment, the light absorbing blocks 281a are formed of a light absorbing material. Such as, but not limited to, metal oxides, carbon black coatings, black inks, and the like. The metal in the metal oxide is, for example, but not limited to, one or more of chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), and molybdenum (Mo). The raised blocks 281b are, for example, but not limited to, transparent layers formed of transparent materials, such as translucent materials, light absorbing materials, and the like.

In some embodiments, the light absorption blocks 281a in the same layer are spaced apart, and the region corresponding to the space between the light absorption blocks 281a in the same layer is the light transmission region 282. Further, the plurality of light absorption blocks 281a and the plurality of block-up blocks 281b of the same layer may be manufactured at one time. Specifically, by providing a mask, the mask is an integrally formed membrane, and the membrane forms an opening corresponding to the position of the light absorption block 281a, and the shape and size of the opening are consistent with the shape and size of the light absorption block 283. The light absorbing blocks 281a and the step-up blocks 281b alternately arranged are sequentially vapor-deposited on a support through the mask, thereby forming the anti-aliasing imaging element 28.

The height of the height block 281b is set to not only speed up the fabrication process of the anti-aliasing imaging device 28, but also ensure the anti-aliasing effect of the anti-aliasing imaging device 28.

In some embodiments, the transparent region 282 may be filled with a transparent material to increase the strength of the anti-aliasing imaging element layer, and to prevent impurities from entering the transparent region 282 to affect the light transmission effect. In order to ensure the light-transmitting effect of the light-transmitting area 282, the transparent material may be a material with a relatively high light transmittance, such as glass, PMMA (acrylic), PC (polycarbonate), or the like.

In some embodiments, referring to fig. 12, fig. 12 shows a structure of an anti-aliasing imaging element according to another embodiment of the invention. The anti-aliasing imaging element 28 is a multilayer structure, and the anti-aliasing imaging element 28 comprises light absorbing layers 283 and transparent support layers 284 which are alternately stacked; the light absorbing layer 283 includes a plurality of light absorbing blocks 283a arranged at intervals; the transparent support layer 284 is formed by filling a transparent material, and also fills the gaps 283b between the light absorption blocks 283 a; wherein the region corresponding to the space 283b forms the light-transmitting region 282.

Further, referring to fig. 13, fig. 13 shows a process for manufacturing the anti-aliasing imaging element according to an embodiment of the invention. Specifically, when the anti-aliasing imaging element 28 is prepared, a layer of light absorbing material is coated on a carrier, and the light-transmitting region 282 is etched away from the light absorbing material layer, so that the unetched portions form a plurality of light absorbing blocks 283 a. Such as, but not limited to, photolithography, X-ray lithography, electron beam lithography, and ion beam lithography. And the etching type may include both dry etching and wet etching. Then, a transparent material is coated on the etched light absorption blocks 283, and the transparent material not only covers the plurality of light absorption blocks 283a, but also fills the spaces 283b between the plurality of light absorption blocks 283a, thereby forming the transparent support layer 284. Then, a plurality of light absorbing blocks 283a are formed on the transparent support layer 284 in the manner in which the light absorbing layer 283 is formed, and so on, a plurality of light absorbing layers 283 and transparent support layers 284 which are alternately laminated are formed, thereby forming the anti-aliasing imaging element 28.

Further, in order to ensure the light-transmitting effect of the light-transmitting region 282, the transparent material forming the transparent supporting layer 284 may be a material with a relatively high light transmittance, such as glass, PMMA (acrylic), PC (polycarbonate), epoxy resin, or the like.

In some embodiments, referring to fig. 14, fig. 14 shows a structure of an anti-aliasing imaging element according to another embodiment of the invention. The anti-aliasing imaging element 28 comprises light absorbing layers 283 and transparent support layers 284 arranged in alternating layers, with each layer of transparent support layer 284 having an unequal thickness. I.e., thicknesses h1, h2, and h3 in fig. 14 are not equal in value. Optionally, the thickness of the transparent support layer 284 increases layer by layer, i.e., h1< h2< h 3. In this way, light signals which are not shifted by ± 20 ° from the vertical direction of the substrate can be prevented from passing through the transparent support layer 284 between the light absorbing blocks 283a, thereby improving the sensing accuracy of the photoelectric sensing device 20. It should be noted that the thickness parameter of each transparent supporting layer 284 and the width and height parameters of the light absorbing block 283a can be set differently and in combination with various settings, so as to improve the sensing accuracy of the photo-sensor device 20.

In some embodiments, the anti-aliasing imaging components 28 are formed directly on the photosensitive die 24, i.e., the anti-aliasing imaging components 28 are formed on the photosensitive die 24 with the photosensitive pixels 22. Alternatively, the anti-aliasing imaging component 28 may be fabricated separately and then disposed on the photosensitive die 24 with the photosensitive pixels 22, thereby speeding up the fabrication process of the optoelectronic sensing device 20.

In some embodiments, the plurality of light transmissive regions 282 in the anti-aliasing imaging component 28 are uniformly distributed, thereby making the fabrication process of the anti-aliasing imaging component 28 simpler. Moreover, the anti-aliasing imaging element 28 may be, for example, an integrally formed film, which is separately fabricated and then attached to the photo sensor die 24, thereby speeding up the fabrication process of the photo sensor device 20.

In some embodiments, the filter 23 may be disposed between the photosensitive pixel 22 and the anti-aliasing imaging component 28, or disposed on the anti-aliasing imaging component 28, i.e., the filter 23 is disposed at an end of the anti-aliasing imaging component 28 away from the photosensitive pixel 22.

In some embodiments, in order to further improve the sensing accuracy of the photo-sensor device 20, the photo-sensor device 220 with high sensitivity to the blue light signal may be selected. The light sensing device 220 with high light sensing sensitivity to the light signal of the preset waveband is selected to perform light sensing, so that the light sensing device 220 is more sensitive to the light signal of the preset waveband, and therefore, the interference caused by the red light signal in the ambient light is avoided to a certain extent, and the sensing precision of the photoelectric sensing device 20 is improved.

Referring to fig. 15, fig. 15 shows a structure of a photoelectric sensing apparatus according to another embodiment of the present invention. The substrate 26 may further have a scan line group and a data line group electrically connected to the photosensitive pixels 22, the scan line group being used for transmitting a scan driving signal to the photosensitive pixels 22 to activate the photosensitive pixels 22 to perform photo sensing, and the data line group being used for outputting an electrical signal generated by the photosensitive pixels performing photo sensing. The substrate 26 is, for example, but not limited to, a silicon substrate or the like.

Specifically, with continued reference to fig. 15, the photosensitive pixels 22 are distributed in an array, such as a matrix. Of course, other regular or irregular distributions are also possible. The scan line group includes a plurality of scan lines 201, the data line group includes a plurality of data lines 202, and the plurality of scan lines 201 and the plurality of data lines 202 are disposed to cross each other and between adjacent photosensitive pixels 22. For example, a plurality of scan lines G1, G2 … Gm are arranged at intervals in the Y direction, and a plurality of data lines S1, S2 … Sn are arranged at intervals in the X direction. However, the plurality of scan lines 201 and the plurality of data lines 202 may be arranged at a certain angle, for example, 30 ° or 60 °, instead of being arranged perpendicularly as shown in fig. 1. In addition, due to the conductivity of the scan lines 201 and the data lines 202, the scan lines 201 and the data lines 202 at the crossing positions are isolated from each other by an insulating material.

It should be noted that the distribution and number of the scan lines 201 and the data lines 202 are not limited to the above-mentioned embodiments, and corresponding scan line groups and data line groups may be correspondingly arranged according to different structures of photosensitive pixels.

Furthermore, the plurality of scan lines 201 are connected to a driving circuit 25, and the plurality of data lines 202 are connected to a signal processing circuit 27. The driving circuit 25 is configured to provide a corresponding scan driving signal, and transmit the scan driving signal to a corresponding photosensitive pixel 22 through a corresponding scan line 201, so as to activate the photosensitive pixel 22 to perform light sensing. The driving circuit 25 is formed on the substrate 26, and may be electrically connected to the photosensitive pixels 22 through a flexible circuit board, i.e., connected to the plurality of scanning lines 201. The signal processing circuit 27 receives an electric signal generated by the corresponding photosensitive pixel 22 performing the light sensing through the data line 202, and acquires the biometric information of the target object based on the electric signal.

In some embodiments, the photo-sensing device 20 further includes a controller 29, and the controller 29 is configured to control the driving circuit to output a corresponding scanning driving signal, such as, but not limited to, activating the photosensitive pixels 22 row by row to perform photo-sensing. The controller 29 is also configured to control the signal processing circuit 27 to receive the electric signals output by the light-sensing pixels 22, and to generate an image of the target object based on the electric signals after receiving the electric signals output by all the light-sensing pixels 22 that perform light sensing.

Further, the signal processing circuit 27 and the controller 29 may be formed on the substrate 26, or may be electrically connected to the photosensitive pixels 22 through a flexible circuit board.

In some embodiments, as shown in fig. 16, fig. 16 illustrates a circuit configuration of a light-sensitive pixel 22 in accordance with an embodiment of the present invention. The light-sensitive pixel 22 includes a light-sensitive device 220 and a switching device 222. The switch device 222 has a control terminal C and two signal terminals, such as a first signal terminal Sn1 and a second signal terminal Sn 2. The control terminal C of the switching device 222 is connected to the scan line 201, the first signal terminal Sn1 of the switching device 222 is connected to a reference signal L via the photo sensor 220, and the second signal terminal Sn2 of the switching device 222 is connected to the data line 202.

Specifically, the photosensitive device 220 may be, for example, but not limited to, any one or more of a photodiode, a phototransistor, a photodiode, a photoresistor, and a thin film transistor. The switching device 222 is, for example, but not limited to, any one or more of a transistor, a MOS transistor, and a thin film transistor. It should be noted that the photosensitive pixel 22 shown in fig. 16 is for illustration only, and is not limited to other structures of the photosensitive pixel 22. For example, the photo-sensing devices 220 may also include other types of devices, and the number may also be 2, 3, etc. The switching devices 222 may also include other types of devices, as well as 2, 3, etc.

Taking the structure of the light-sensing pixel 22 shown in fig. 16 as an example, the gate of the thin film transistor TFT serves as the control terminal C of the switching device 222, and the source and drain of the thin film transistor TFT correspond to the first signal terminal Sn1 and the second signal terminal Sn2 serving as the switching device 222. The gate of the thin film transistor TFT is connected to the scanning line 201, the source of the thin film transistor TFT is connected to the cathode of the photodiode D1, and the drain of the thin film transistor TFT is connected to the data line 202. The anode of the photodiode D1 is connected to a reference signal L, which is, for example, a ground signal or a negative voltage signal.

When the photosensitive pixel 22 performs light sensing, a driving signal is applied to the gate of the TFT through the scan line 201 to drive the TFT to be turned on. At this time, the data line 202 is connected to a positive voltage signal, when the TFT is turned on, the positive voltage signal on the data line 202 is applied to the cathode of the photodiode D1 through the TFT, and since the anode of the photodiode D1 is grounded, a reverse voltage is applied across the photodiode D1, so that the photodiode D1 is in a reverse bias state, i.e., in an operating state. At this time, when an optical signal is irradiated to the photodiode D1, the reverse current of the photodiode D1 rapidly increases, thereby causing a current change on the photodiode D1, which can be obtained from the data line 202. Since the larger the intensity of the optical signal is, the larger the generated reverse current is, the intensity of the optical signal can be obtained according to the current signal acquired on the data line 202, and thus the biometric information of the target object can be obtained.

In some embodiments, the reference signal L may be a positive voltage signal, a negative voltage signal, a ground signal, or the like. It is within the scope of the present invention that the electrical signal provided on the data line 202 and the reference signal L are applied to both ends of the photodiode D1, so that a reverse voltage is formed across the photodiode D1 to perform the light sensing.

It is to be understood that the connection method of the thin film transistor TFT and the photodiode D1 in the photosensitive pixel 22 is not limited to the connection method shown in fig. 16, and other connection methods may be used. For example, as shown in fig. 17, a circuit structure of a light-sensing pixel according to another embodiment of the present invention is shown. The gate G of the thin film transistor TFT is connected to the scanning line 201, the drain D of the thin film transistor TFT is connected to the positive electrode of the photodiode D1, and the source S of the thin film transistor TFT is connected to the data line 202. The cathode of the photodiode D1 is connected to a positive voltage signal.

In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and those skilled in the art can make changes, modifications, substitutions and alterations to the above embodiments within the scope of the present invention.

Claims

1. An electronic device, characterized in that: the display screen comprises a display screen and a photoelectric sensing device positioned below the display screen, wherein the display screen comprises a plurality of display pixels, the photoelectric sensing device comprises a substrate and a plurality of photosensitive pixels arranged on the substrate, the photosensitive pixels are arranged corresponding to the display pixels, the display pixels comprise three display pixels of red, green and blue, the display pixels are provided with corresponding micro-resonant cavity structures, the micro-resonant cavity structures are used for enhancing light signals emitted by the display pixels and reflecting the parts of the returned light signals with the same wavelength as the emitted light signals of the display pixels, the rest returned light signals pass through the micro-resonant cavity structures, the photosensitive pixels comprise at least one photosensitive device, the photosensitive device is positioned below the display pixels, and the photosensitive device receives light beams reflected by an external target object through the display pixels, and converts the received light beam into a corresponding electrical signal.

2. The electronic device of claim 1, wherein: the display screen is an OLED display screen.

3. The electronic device of claim 1, wherein: the photosensitive surface of the photosensitive device is equal to the area of the display pixel.

4. The electronic device of claim 2, wherein; the OLED display screen further comprises a transparent substrate, and the display pixel comprises an anode formed on the transparent substrate, a light-emitting layer formed on the anode, and a cathode formed on the light-emitting layer.

5. The electronic device of claim 4, wherein: the micro resonant cavity structure is arranged below the anode or the cathode; the photosensitive device is located below the micro-resonant cavity structure of the red display pixel.

6. The electronic device of claim 5, wherein: the photosensitive device is further located below the blue display pixels or the green display pixels, a filter film is arranged on the photosensitive device and used for filtering light signals outside a preset wave band, and the preset wave band is arranged along with different placement positions of the photosensitive device.

7. The electronic device of claim 4, wherein: the photosensitive device is positioned below any one or more of red, green and blue display pixels; the light filter film is arranged on the photosensitive device and used for filtering light signals outside a preset wave band.

8. The electronic device of claim 1, wherein: the electronic device further comprises a protective cover plate, wherein the protective cover plate is positioned above the display screen.

9. The electronic device of claim 1, wherein: the photoelectric sensing device is a photosensitive chip and is used for sensing the biological characteristic information according to the electric signal.

10. The electronic device of claim 9, wherein: the middle-lower position of the display screen is provided with a sensing area for a target object to touch, and the photoelectric sensing device is correspondingly positioned below the sensing area.

11. The electronic device of claim 1, wherein: the photoelectric sensing device further comprises an anti-aliasing imaging element, wherein the anti-aliasing imaging element is positioned on the photosensitive pixel and used for preventing the optical signals received between the adjacent photosensitive pixels from aliasing.

12. The electronic device of claim 11, wherein: the anti-aliasing imaging element comprises an optical absorption wall and a plurality of light transmission areas enclosed by the optical absorption wall.

13. The electronic device of claim 12, wherein: the plurality of light transmitting areas are uniformly distributed.

14. The electronic device of claim 12, wherein: the light absorption wall comprises a plurality of light absorption blocks and heightening blocks which are alternately stacked.

15. The electronic device of claim 14, wherein: the heightening block is made of transparent materials.

16. The electronic device of claim 12, wherein: and transparent materials are filled in the light-transmitting areas.

17. The electronic device of claim 11, wherein: the anti-aliasing imaging element comprises a plurality of light absorption layers and a plurality of transparent supporting layers which are alternately stacked; the light absorption layer comprises a plurality of light absorption blocks arranged at intervals; the transparent supporting layer is formed by filling transparent materials and also fills the intervals among the light absorption blocks; wherein the regions corresponding to the spaces form light-transmitting regions.

18. The electronic device of claim 17, wherein: the thicknesses of the transparent support layers are not equal.

19. The electronic device of claim 18, wherein: the thickness of the transparent supporting layer is increased layer by layer.

20. The electronic device of claim 1, wherein: the photoelectric sensing device is a fingerprint sensing device.

21. The electronic device of claim 11, wherein: the photoelectric sensing device comprises a photosensitive bare chip, the photosensitive bare chip comprises the substrate and a plurality of photosensitive pixels arranged on the substrate, and the anti-aliasing imaging element is directly formed on the photosensitive bare chip by taking the photosensitive bare chip as a bearing object during manufacturing and forming; alternatively, the anti-aliasing element is separately fabricated and then disposed on the photo-sensitive die.

22. The electronic device of claim 12, wherein: each photosensitive pixel corresponds to a plurality of light-transmitting areas.