CN113540155A

CN113540155A - Display screen and electronic equipment

Info

Publication number: CN113540155A
Application number: CN202010280694.4A
Authority: CN
Inventors: 蔡奇; 黄宗兴; 彭旭
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2020-04-10
Filing date: 2020-04-10
Publication date: 2021-10-22
Anticipated expiration: 2040-04-10
Also published as: CN113540155B

Abstract

The embodiment of the application provides a display screen and electronic equipment, and relates to the technical field of display. The display screen is used for reducing the bang area of the display screen and improving the screen occupation ratio of the electronic equipment. The display screen is provided with a display area and comprises a photosensitive unit and a plurality of sub-pixels, wherein the photosensitive unit and the sub-pixels are arranged in the display area. The sub-pixels are provided with effective display areas, and the photosensitive units comprise at least one photosensitive control circuit. In addition, the light sensing control circuit comprises a switching transistor and a photosensitive element coupled with the switching transistor, and the light sensing control circuit is positioned between the effective display areas of two adjacent sub-pixels. Based on this, the photosensitive element is used for performing photoelectric conversion on light incident to the display screen and generating an electric signal. The photosensitive control circuit is used for outputting the electric signal when the switch transistor is in a conducting state.

Description

Display screen and electronic equipment

Technical Field

The application relates to the technical field of display, in particular to a display screen and electronic equipment.

Background

With the development of display screen technology, display screens are more and more widely applied. However, in the application process of the display screen, the intensity of the light can bring certain difficulties to the application. For example, when the display is used in a dark environment, the brightness of the display is too high, which is likely to cause fatigue, and when the display is used outdoors with sufficient sunlight, the brightness of the display is too low, which makes the screen unclear. Therefore, it is desirable that the brightness of the display screen can be changed as the intensity of the light is changed. Therefore, it is necessary to provide a photosensitive unit in the display screen. And the sensitization unit usually sets up in the bang district of display screen at present to the screen of electronic equipment accounts for the ratio has been reduced.

Disclosure of Invention

The embodiment of the application provides a display screen and electronic equipment for reduce the bang district of display screen, improve electronic equipment's screen and account for than.

In order to achieve the purpose, the technical scheme is as follows:

in a first aspect of the embodiments of the present application, a display screen is provided, where the display screen has a display area, and the display screen includes a plurality of sub-pixels and a photosensitive unit disposed in the display area. The sub-pixels are provided with effective display areas, and the photosensitive units comprise at least one photosensitive control circuit. In addition, the light sensing control circuit comprises a switching transistor and a photosensitive element coupled with the switching transistor, and the light sensing control circuit is positioned between the effective display areas of two adjacent sub-pixels. Based on this, the photosensitive element is used for performing photoelectric conversion on light incident to the display screen and generating an electric signal. The photosensitive control circuit is used for outputting the electric signal when the switch transistor is in a conducting state. Therefore, the brightness of the display screen is adjusted according to the acquired electric signals, and the function of adjusting the brightness of the equipment according to the brightness of light is realized. Simultaneously, compare with the mode that sets up light sensor in bang district, because each sensitization control circuit among this sensitization unit sets up in the effective display area of subpixel, can increase the area that is used for overall arrangement subpixel's region in the display screen to can reduce or get rid of the bang district of display screen, improve electronic equipment's screen occupation of area.

Optionally, the display screen further includes a first substrate, a pixel defining layer, a plurality of light emitting devices, and a second substrate. The pixel defining layer is arranged on the first substrate base plate and comprises a plurality of pixel partition walls. In addition, a plurality of pixel partition walls are arranged in a plurality of openings in a crosswise surrounding manner, and one light emitting device is positioned in one opening. And the second substrate base plate is arranged on one side of the light-emitting device far away from the first substrate base plate. Therefore, the vertical projection of the photosensitive control circuit on the first substrate base plate is positioned in the range of the vertical projection of the pixel partition wall on the first substrate base plate, so that the interference of the photosensitive control circuit on the optical path of the pixel can be avoided.

Optionally, the photosensitive control circuit is arranged on the surface of one side, close to the light-emitting device, of the first substrate base plate, and therefore the photosensitive control circuit can be the same as the first substrate base plate, a mask process is adopted for manufacturing the photosensitive control circuit, production is facilitated, and station change and equipment change in the production process are simplified. Meanwhile, the vertical projection of the photosensitive control circuit on the first substrate base plate can be conveniently positioned in the range of the vertical projection of the pixel partition wall on the first substrate base plate, so that the interference of the photosensitive control circuit on a pixel light path is avoided.

Optionally, the photosensitive control circuit is disposed on a surface of the pixel defining layer away from the first substrate, so that a vertical projection of the photosensitive control circuit on the first substrate can be conveniently located within a range of a vertical projection of the pixel partition wall on the first substrate, thereby avoiding interference of the photosensitive control circuit on a pixel light path.

Optionally, the display screen further includes a first substrate, a second substrate, a liquid crystal layer and a black matrix, wherein the liquid crystal layer is disposed between the first substrate and the second substrate. The black matrix is positioned on one side surface of the second substrate base plate close to the first substrate base plate. Based on this, the vertical projection of the photosensitive control circuit on the second substrate is positioned in the range of the vertical projection of the black matrix on the second substrate, so that the interference of the photosensitive control circuit on the optical path of the pixel can be avoided.

Optionally, the photosensitive control circuit is arranged on the surface of one side, away from the first substrate base plate, of the second substrate base plate, so that the photosensitive control circuit can be the same as the second substrate base plate, a mask process is adopted to manufacture the photosensitive control circuit, production is facilitated, and station change and equipment change in the production process are simplified. Meanwhile, the photosensitive control circuit can be conveniently positioned between the effective display areas of two adjacent sub-pixels, so that the interference of the photosensitive control circuit on the light path of the pixel is avoided.

Optionally, the display screen further includes a touch layer. The touch layer is arranged on one side, away from the first substrate, of the second substrate, and the photosensitive control circuit is arranged on the surface of one side, away from the first substrate, of the touch layer, so that the photosensitive control circuit can be conveniently located between effective display areas of two adjacent sub-pixels, and interference of the photosensitive control circuit on a pixel light path is avoided.

Optionally, the display screen further includes an upper polarizer. The upper polaroid is arranged on one side, away from the first substrate base plate, of the second substrate base plate, and based on the arrangement, the photosensitive control circuit is arranged on one side surface, away from the first substrate base plate, of the upper polaroid, so that the photosensitive control circuit can be conveniently located between effective display areas of two adjacent sub-pixels, and interference of the photosensitive control circuit on a pixel light path is avoided.

Optionally, the display screen further comprises a cover plate. The cover plate is arranged on one side, away from the first substrate base plate, of the second substrate base plate, and based on the structure, the photosensitive control circuit is arranged on the surface of one side, away from the first substrate base plate, of the cover plate, so that the photosensitive control circuit can be conveniently located between effective display areas of two adjacent sub-pixels, and interference of the photosensitive control circuit on a pixel light path is avoided.

Optionally, the display screen further includes a gate signal line and a read signal line crossing in the horizontal and vertical directions. The photosensitive element comprises a phototriode, the grid electrode of the phototriode is coupled with the first pole of the switching transistor, the first pole of the phototriode is coupled with the reading signal line, and the second pole of the phototriode is coupled with the first voltage end. In addition, the grid of the switch transistor is coupled with the gating signal line, and the second pole of the switch transistor is coupled with the second voltage end.

Based on this, when switching transistor's grid loading high voltage, switching transistor switches on, and at this moment, triode's grid loading high voltage, triode switches on to carry out photoelectric conversion with the light of incidenting to the display screen, and generate the signal of telecommunication, sensitization control circuit when switching transistor is in the conducting state, the output signal of telecommunication, thereby the realization can be according to the luminance of the signal of telecommunication adjustment display screen that reads.

Optionally, the display screen further includes a gate signal line and a read signal line crossing in the horizontal and vertical directions. Wherein the photosensitive element comprises a photodiode or a photoresistor. A first terminal of the photosensor is coupled to the first pole of the switching transistor, and a second terminal of the photosensor is coupled to the read signal line. In addition, the grid of the switch transistor is coupled with the gating signal line, and the second pole of the switch transistor is coupled with the first voltage end.

Based on this, when the grid loading high voltage of switch transistor, switch transistor switches on to carry out photoelectric conversion with the light of incidenting to the display screen, and the formation signal of telecommunication, sensitization control circuit when switch transistor Tc is in the conducting state, the output signal of telecommunication, thereby the realization can be according to the luminance of the signal adjustment display screen that reads.

Optionally, the photosensitive control circuit further includes a resistor. The first end of the resistor is coupled with the reading signal line, and the second end of the resistor is coupled with the third voltage end. The voltage of the first voltage end is greater than that of the third voltage end. Therefore, an electric field can be formed between the first voltage end and the third voltage end, the phototriode performs photoelectric conversion on light rays entering the display screen under the action of the electric field, and the impedance change condition of the phototriode is obtained by testing the voltages at the two ends of the resistor. Therefore, the change condition of the impedance is transmitted to the reading signal line, and the brightness of the display screen is adjusted according to the obtained impedance change condition.

Optionally, the display screen further includes a filter layer. The filter layer is arranged on one side of the light incident surface of the photosensitive element and covers the light incident surface of the photosensitive element. The filter layer is used for filtering light rays entering the display screen and comprises a silicon oxide layer and a titanium oxide layer which are stacked. Based on the above, the filter layer can be used for filtering out the non-response waveband of the photosensitive element by adjusting the layer number and the refractive index of the silicon oxide layer and the titanium oxide layer in the filter layer.

Optionally, the display screen further comprises a light blocking structure. The light blocking structure is arranged on one side where the light incident surface of the photosensitive element is located and arranged around the photosensitive element in a circle. Therefore, light emitted by the display screen can be shielded, and interference of the light on the acquisition result of the photosensitive control circuit is avoided.

Optionally, the light incident surface of the light sensitive element is circular. In addition, the ratio of the radius R of the light incident surface of the light sensitive element to the height H of the light blocking structure is R/H ═ tan θ, wherein the angle θ is the included angle between the incident light and the normal of the light incident surface of the light sensitive element. The angle theta is within the range of 5-30 degrees. Therefore, the incident range of incident light is reduced, and non-detection light is prevented from being incident, so that the detection result is more accurate.

Optionally, the switch transistor is a top gate transistor, and the display screen further includes a light shielding layer. The light shielding layer is positioned on one side, away from the active layer of the switch transistor, of the grid electrode of the switch transistor, and the light shielding layer covers the grid electrode of the switch transistor. Therefore, the damage of external light to the active layer of the switching transistor can be avoided.

In a second aspect of the embodiments of the present application, an electronic device is provided, where the electronic device includes any one of the display screens described above, and the electronic device has the same technical effects as the display screen provided in the foregoing embodiments, and details are not repeated here.

Drawings

Fig. 1a is a schematic structural diagram of an electronic device according to an embodiment of the present disclosure;

fig. 1b is a schematic structural diagram of a display screen according to an embodiment of the present application;

fig. 1c is a schematic structural diagram of another display screen provided in an embodiment of the present application;

fig. 1d is a schematic structural diagram of another display screen provided in the embodiment of the present application;

fig. 2a is a schematic structural diagram of another electronic device provided in the embodiment of the present application;

FIG. 2b is a schematic diagram illustrating an arrangement position of a photosensitive unit according to an embodiment of the present disclosure;

FIG. 3a is a circuit diagram of a photosensitive control circuit according to an embodiment of the present disclosure;

FIG. 3b is a circuit diagram of another photosensitive control circuit according to an embodiment of the present disclosure;

FIG. 3c is a schematic diagram of a partial structure of a display panel with a light sensing control circuit according to an embodiment of the present disclosure;

FIG. 3d is a partial schematic view of the region W in FIG. 3 c;

FIG. 3e is a schematic view of the light-blocking structure shown in FIG. 3 d;

fig. 4a is a schematic structural diagram of another electronic device provided in the embodiment of the present application;

fig. 4b is a schematic structural diagram of another electronic device provided in the embodiment of the present application;

fig. 4c is a schematic structural diagram of an electronic device according to a related art;

FIG. 4d is a cross-sectional view taken along the dashed line A-A in FIG. 4 c;

fig. 4e is a schematic cross-sectional structure diagram of an electronic device according to an embodiment of the present disclosure;

fig. 5a is a schematic partial structure diagram of a display panel having a light sensing control circuit according to an embodiment of the present application;

FIG. 5b is a schematic diagram of another partial structure of a display panel with a light sensing control circuit according to an embodiment of the present disclosure;

FIG. 5c is a schematic diagram of another partial structure of a display panel with a light sensing control circuit according to an embodiment of the present disclosure;

FIG. 6a is a circuit diagram of another photosensitive control circuit according to an embodiment of the present disclosure;

FIG. 6b is a schematic diagram of another partial structure of a display panel with a light sensing control circuit according to an embodiment of the present disclosure;

FIG. 7 is a circuit diagram of another photosensitive control circuit provided in the embodiment of the present application;

fig. 8a is a schematic structural diagram of another display screen provided in an embodiment of the present application;

FIG. 8b is a cross-sectional view taken along the dashed line O-O in FIG. 8 a;

fig. 8c is a schematic structural diagram of another display screen provided in the embodiment of the present application;

fig. 8d is a schematic structural diagram of another display screen provided in the embodiment of the present application;

fig. 8e is a schematic structural diagram of another display screen provided in the embodiment of the present application;

fig. 9 is a schematic structural diagram of another display screen provided in an embodiment of the present application;

fig. 10a is a schematic structural diagram of another display screen provided in an embodiment of the present application;

fig. 10b is a schematic structural diagram of another display screen provided in the embodiment of the present application;

fig. 10c is a schematic structural diagram of another display screen provided in the embodiment of the present application;

fig. 10d is a schematic structural diagram of another display screen provided in the embodiment of the present application.

Reference numerals:

01-an electronic device; 10-a display module; 11-middle frame; 12-a rear shell; 13-a light sensing unit; 101-a display screen; 202-pixel unit; 130-a substrate; 104-pixel circuitry; 105-sub-pixels; 105R-red subpixel; 105G-green subpixel; 105B-blue subpixel; AA-active display area; 106-non-active display area; 220-light sensitive pixels; RG-photoresistor; 317-a silicon oxide (SiOx) layer; 318-titanium oxide (TiOx) layer; 113-a light emitting device; 116-pixel banks; 125-first substrate base plate; 126-pixel definition layer; 127-a second substrate base; 117-anode; 118-a light emitting layer; 119-a cathode; 201-a photosensitive control circuit; an s-source; a d-drain electrode; g-a grid; 314 — active layer of switching transistor; GL-grid line; tc-switching transistor; BG-phototriode; RL-read signal line; 311-a buffer layer; 312-a gate insulating layer; 302-a first gate; 313-an intermediate layer; 320-a first groove; 321-a second groove; 303-a light-shielding layer; 322-third groove; 323-fourth groove; 324-a fifth groove; 304-a light blocking structure; 305-a filter layer; 310-a passivation layer; 308-a phototransistor active layer; 307-a second gate; h-light blocking structure height; r-radius of the light incident surface of the phototransistor; 504-a transistor; 120-opening; VD-photosensitive diode; 501-a touch layer; 502-upper polarizer; 503-cover plate; 602-black matrix; 603-liquid crystal molecules; 601-a liquid crystal layer; 604-color film substrate; 100-Liu Hai district; 200-light sensor.

Detailed Description

The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments.

In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.

Further, in the present application, directional terms such as "upper", "lower", and the like may include, but are not limited to, being defined relative to a schematically-disposed orientation of components in the drawings, it being understood that these directional terms may be relative concepts that are intended for relative description and clarification, and that will vary accordingly depending on the orientation of the components in the drawings in which they are disposed.

In the present application, unless expressly stated or limited otherwise, the term "coupled" is to be construed broadly, e.g., "coupled" may be a fixed connection, a removable connection, or an integral part; may be directly connected or indirectly connected through an intermediate. Furthermore, the term "coupled" may be a manner of making electrical connections that communicate signals. "coupled" may be a direct electrical connection or an indirect electrical connection through intervening media.

The embodiment of the application provides electronic equipment. The electronic device comprises a mobile phone (mobile phone), a tablet personal computer (pad), a computer, a television, an intelligent wearable product (e.g., a smart watch and a smart bracelet), a Virtual Reality (VR) terminal device, an augmented reality (augmented reality AR), and other electronic products with a display function. The embodiment of the present application does not specifically limit the specific form of the electronic device.

For convenience of explanation, the electronic device 01 is taken as an example of a mobile phone as shown in fig. 1 a. In this case, the electronic device 01 mainly includes a display module 10, a middle frame 11 and a rear case 12. The middle frame 11 is located between the display module 10 and the rear case 12. The display module 10 and the rear shell 12 are respectively connected with the middle frame 11. The accommodating cavity formed between the rear case 12 and the middle frame 11 is used for accommodating a battery, a camera (not shown in fig. 1 a), and electronic components such as a Printed Circuit Board (PCB) shown in fig. 1 a.

In addition, the display module 10 is used for displaying images and includes a display screen 101 as shown in fig. 1b, wherein the display screen 101 has a plurality of pixel (pixel) units 202. In some embodiments of the present application, the pixel arrangement may be as shown in fig. 1B, where one pixel unit 202 includes one red (R) color sub-pixel 105R, one green (G) color sub-pixel 105G, and one blue (B) color sub-pixel 105B. Illustratively, the red subpixel 105R and the green subpixel 105G are located in the same row along the X-direction, the blue subpixel 105B is located in another row and is located in the same column along the Y-direction as the red subpixel 105R. For the pixel arrangement shown in FIG. 1B, the sub-pixel may not be located on the right side of the blue sub-pixel 105B and below the green sub-pixel 105G. So that there is a certain gap between two adjacent green sub-pixels 105G located in the same column in the Y direction.

It should be noted that fig. 1B illustrates an example in which the red subpixel 105R and the green subpixel 105G are located in the same row along the X-axis direction and the blue subpixel 105B is located in the next row in the same pixel unit 202. In other embodiments of the present application, the red sub-pixel 105R and the blue sub-pixel 105B in the same pixel unit 202 may be located in the same row along the X-axis direction, and the green sub-pixel 105G is located in the next row, or the green sub-pixel 105G and the blue sub-pixel 105B may be located in the same row along the X-axis direction, and the red sub-pixel 105R is located in the next row.

In other embodiments of the present application, the pixels of the display panel 101 may be arranged in a manner as shown in fig. 1c, and the red sub-pixel 105R, the green sub-pixel 105G, and the blue sub-pixel 105B in the same pixel unit 202 may be sequentially arranged in the same row along the X-axis direction. It should be noted that, the arrangement of the primary color sub-pixels 105 of red, green and blue can be determined according to the requirement, and the application is not limited thereto. For example, the arrangement of the sub-pixels 105 of the display panel 101 may be a Pentile pixel arrangement (which may be referred to as a P arrangement) or an RGB-Delta pixel arrangement (which may be referred to as a D arrangement) in which the red sub-pixel, the blue sub-pixel, and the green sub-pixel have different areas.

For any of the pixel arrangements shown in fig. 1b or fig. 1c, any one of the sub-pixels 105 has an Active Area (AA) and a non-active area 106 around the AA. The AA region of the subpixel 105 is a region of the subpixel 105 that is actually used for displaying an image. In this case, the non-effective display area 106 between the AA areas of any two adjacent sub-pixels 105 described above is not used for displaying an image.

In general, when the display screen 101 is used in a dark environment, the brightness of the display screen 101 is too high, which is likely to cause fatigue, and when the sunlight is sufficiently sunny outdoors, the brightness of the display screen 101 is too low, which makes the screen unclear, which makes the application difficult.

Based on this, the electronic device 01 provided in the embodiment of the present application further has a function of adjusting the brightness of the display screen 101 according to the light. In this case, the electronic device 01 may further comprise a light sensing unit 13 as in fig. 2 a. Therein, the light sensing unit 13 may comprise at least one light sensing pixel 220 as shown in fig. 2 b. It should be noted that fig. 2b illustrates an example in which the photosensitive unit 13 includes a plurality of photosensitive pixels 220, and the photosensitive control circuit 201 is disposed in any one of the photosensitive pixels 220.

As can be seen from the above, the area between two adjacent sub-pixel AA areas is the inactive area 106, and the inactive area 106 does not display an image. Therefore, in order to avoid the interference of the respective photosensitive control circuits 201 in the photosensitive units 13 with the image displayed on the display screen, the respective photosensitive control circuits 201 in the photosensitive units 13 may be arranged at intervals. In some embodiments of the present application, the light sensing control circuit 201 may be located in the non-active display area 106 between the active display areas AA of two adjacent sub-pixels 105 (for example, the positions identified in fig. 1b and 1 c). Alternatively, in other embodiments of the present application, as shown in fig. 1d, the light sensing control circuit 201 may be located in the inactive display area 106 between two adjacent pixel units 202.

As shown in fig. 3a, each light sensing control circuit 201 includes a switching transistor Tc and a light sensing element (e.g., a phototransistor BG shown in fig. 3 a) coupled to the switching transistor Tc. The switching transistor Tc may be a Thin Film Transistor (TFT) or a MOS transistor. For convenience of explanation, the switching transistor Tc is exemplified as a TFT.

In the embodiments of the present disclosure, any one of the TFTs may include a gate (gate, g), an Active Layer (AL), and a first electrode, such as a source(s), and a second electrode, such as a drain (d). Alternatively, the first pole of the transistor may be the drain d and the second pole may be the source s. For convenience of illustration, the first pole of the transistor is taken as the drain d, and the second pole is taken as the source s.

Further, when the switching transistor Tc is a TFT, the switching transistor Tc may be a top gate type transistor or a bottom gate type transistor, and when it is a top gate type transistor, the gate electrode g of the switching transistor Tc is farther from the substrate with respect to the active layer AL. In this case, in order to avoid the active layer 314 of the switch transistor Tc from being damaged by the external light, the display screen 101 may further include a light shielding layer, wherein the light shielding layer is located on a side of the gate g of the switch transistor Tc away from the active layer AL of the switch transistor Tc, and the light shielding layer covers the gate g of the switch transistor Tc. When it is a top gate type transistor, the gate g of the switching transistor Tc is closer to the substrate with respect to the active layer AL. In the present application, this is not limited, and for convenience of illustration, the following description will be given taking the switching transistor Tc as a top gate transistor as an example.

Based on this, in some embodiments of the present application, as shown in fig. 3a, the photosensitive element may be a phototransistor BG. The structure of the phototriode BG is similar to that of the switching transistor Tc, namely the phototriode BG can be a TFT or an MOS tube. When the phototransistor BG is the TFT, the phototransistor BG may be a top gate type or a bottom gate type transistor. For convenience of explanation, the following description will be made taking the phototransistor BG as a top gate type. In addition, the difference between the phototransistor BG and the switching transistor Tc is that a photodiode is connected to the active layer of the phototransistor BG. The above-mentioned coupling of the switching transistor Tc and the light sensitive element means that the gate g of the phototransistor BG is coupled to the first pole of the switching transistor Tc.

In this case, the display screen 101 may further include gate signal lines GL and read signal lines RL crossing horizontally and vertically as shown in fig. 2 b. A first electrode of the phototransistor BG, for example, a drain (d) of the phototransistor BG in fig. 3a, is coupled to the read signal line RL, and a gate (gate, g) of the switching transistor Tc is coupled to the gate signal line GL. Furthermore, a second pole of the phototransistor BG is coupled to the first voltage terminal V1, and a second pole of the switching transistor Tc, for example, a source(s) of the phototransistor BG is coupled to the second voltage terminal V2 in fig. 3 a.

Based on this, the input signal of GL can control the conduction of the switching transistor Tc, after the gating signal line GL receives the gating signal, the switching transistor Tc is conducted, and at this time, the voltage of V2 can be loaded to the gate g of the phototriode BG, so that the phototriode BG is conducted.

In addition, in other embodiments of the present application, the voltages of V1 and V2 may be different. At this time, V1 may be larger than V2, and V1 may be smaller than V2, as long as it can turn on the switching transistor Tc and the phototransistor BG. Alternatively, in other embodiments of the present application, as shown in FIG. 3b, the voltages of V1 and V2 may be the same. At this time, the switching transistor Tc and the first electrode of the phototransistor BG may be connected to the same voltage terminal V1.

As shown in fig. 3c (the cross-sectional view taken along the dotted line E-E in fig. 1b, which is only the portion of the display panel 101 having the light sensing control circuit 201), when light is emitted to the surface of the phototransistor BG, a photoelectric conversion effect is generated in the active layer 308 of the phototransistor BG, so that the impedance of the active layer 308 of the phototransistor BG changes, and an accumulation or consumption of charges is formed at two ends of the active layer 308 of the phototransistor BG (as shown in fig. 3c, the left side of the active layer 308 is positive charge, and the right side is negative charge).

In other embodiments of the present application, as shown in fig. 3a, the photosensitive control circuit 201 may further include a resistor R, wherein a first terminal C of the resistor R is coupled to the read signal line RL, a second terminal D of the resistor R is coupled to the third voltage terminal V3, and the voltage of the first voltage terminal V1 is greater than the voltage of the third voltage terminal V3. In some embodiments of the present application, the third voltage terminal V3 may be grounded.

As such, when the strobe signal line GL is turned on at a certain frequency, an electric field may be formed between the first voltage terminal V1 and the third voltage terminal V3. Under the action of the electric field, a current can be formed between charges accumulated at two ends of the active layer 308 of the phototransistor BG (as shown in fig. 3c, the direction of the current is the direction of positive charges pointing to negative charges), and an electric signal is output from the RL end. The certain frequency may be, for example, 20Hz, or set according to requirements, so as to meet requirements of accuracy, power consumption, and the like. In this embodiment, the impedance change of the phototriode BG can be obtained by testing the voltage across the resistor R.

Thereafter, the CPU may adjust the brightness of the display screen 101 according to the acquired impedance change condition. For example, the duty ratio in Pulse Width Modulation (PWM) is adjusted, and when the luminance needs to be increased, the value of the duty ratio may be decreased, and when the luminance needs to be decreased, the value of the duty ratio may be increased. Since this is the prior art of those skilled in the art, it will not be described herein in detail.

It should be noted that, the CPU needs to set the corresponding relationship between the impedance and the display screen brightness in advance. In addition, the reference voltage needs to be tested when the electronic device 01 is in the initial state, and is used as a reference for the later voltage test. The method comprises the following specific steps:

in the initial state, the gate g of the switching transistor Tc is set to 0 bias, at which time the switching transistor Tc is turned off, and V1 and V2 are set to positive bias. Here, V1 may be set to a negative bias voltage or may be set as required, which is not limited in the present application. And V2 is used to turn on the phototransistor BG in the state that the switching transistor Tc is turned on.

Then, the gate signal line GL receives the gate signal, applies a high voltage (for example, the switching transistor Tc is an N-type transistor) to the gate g of the switching transistor Tc to turn on the switching transistor Tc, and the phototransistor BG supplies the high voltage to the phototransistor BG after the switching transistor Tc is turned on to turn on the phototransistor BG, so that the phototransistor BG is turned on, and then reads out a voltage value at both ends of the resistor R at the RL end as a reference voltage.

Based on this, can know from the aforesaid, when light incided to the phototriode BG surface, can convert the signal of telecommunication into, however, after certain part light in the external light got into the phototriode BG surface, be difficult to cause the phototriode BG to take place photoelectric conversion. So as to solve the above problems. In some embodiments of the present application, as shown in fig. 3c, the display 101 may further include a filter layer 305.

This filter layer 305 sets up in the one side at the income plain noodles place of triode BG, and covers the income plain noodles of triode BG, and filter layer 305 is used for filtering the light of incidenting to display screen 101 to filter the non-response wave band of triode BG, improve the accuracy of sensitization control circuit 201 light signal collection. As shown in fig. 3d (an enlarged view corresponding to a W portion in fig. 3 c), the filter layer 305 may include a silicon oxide (SiOx) layer 317 and a titanium oxide (TiOx) layer 318 (only one example of a stacked manner of the silicon oxide (SiOx) layer 317 and the titanium oxide (TiOx) layer 318 is shown), and the light band that can be filtered by the filter layer 305 is adjusted by adjusting the number of layers and the refractive index of the silicon oxide (SiOx) layer 317 and the titanium oxide (TiOx) layer 318. For example, when the photosensitive elements in the photosensitive control circuit 201 do not respond to the infrared band, the filter layer 305 may filter out the light in the infrared band by adjusting the number and refractive index of the silicon oxide (SiOx)317 layer and the titanium oxide (TiOx)318 layer.

It should be noted that, the number of layers, the stacking manner, and the refractive index of SiOx and TiOx are not limited in the present application, and those skilled in the art can set the number of layers, the stacking manner, and the refractive index of SiOx and TiOx through experiments, tests, simulations, and the like, as long as the nonresponse wavelength band can be filtered according to the requirement of the phototriode BG on the wavelength of light.

In addition, as can be seen from the above, each photosensitive control circuit 201 of the photosensitive unit 13 is located in the non-display area 106 between two adjacent AA areas, however, as can be seen from the above, an image can be displayed in the AA area, and when the image is displayed in the AA area, there is a possibility that light emitted from the AA area may be incident on the non-display area 106, thereby affecting the acquisition result of the photosensitive control circuit 201. In order to solve the above problem, the display screen 101 may further include a light blocking structure 304 as shown in fig. 3c, where the light blocking structure 304 is disposed on a side where the light incident surface of the phototransistor BG is located, and is disposed around a circumference of the phototransistor BG (as shown in fig. 3 e), so as to block the light of the sub-pixel 105 from being incident on the phototransistor BG.

In some embodiments of the present application, the light incident surface of the phototransistor BG may be circular as shown in fig. 3e, and at this time, as shown in fig. 3d, a ratio of a radius R of the light incident surface of the phototransistor BG to a height H of the light blocking structure 304 is R/H tan θ, and when the angle θ is within a range of 5 ° to 30 °, the incident range of incident light may be reduced, and incidence of non-detection light is avoided, so that a detection result is more accurate. The angle θ is an angle between the incident light and a normal of a light incident surface of a light sensitive element, such as a phototransistor BG. For example, in some embodiments of the present application, the angle θ may be 5 °, 10 °, 15 °, 20 °, or 30 °.

It should be noted that, for example, the photosensitive unit 13 includes four photosensitive control circuits 201 as shown in fig. 4a, the four photosensitive control circuits 201 may be respectively set at positions corresponding to four vertex angles of the display screen 101 as shown in fig. 4a, and at this time, compared with the related art as shown in fig. 4c, the accuracy is higher when the single light sensor 200 is set in the manner that the single bang area 100 is set in the electronic device 01 (the single bang area 100 is a groove dug in the display area of the display screen 101 for setting other electronic components, such as a camera and a home key).

Or, in other embodiments of the present application, the photosensitive unit 13 includes eight photosensitive control circuits 201 as shown in fig. 4b, and four photosensitive control circuits 201 may be respectively disposed on two sides of the display screen 101, at this time, each photosensitive control circuit 201 in the photosensitive unit 13 may not only test the light intensity to adjust the brightness of the display screen 101, but also detect the hand shielding position, thereby determining the operation performed by the hand. The setting position of the photosensitive control circuit 201 is not limited, and the photosensitive control circuit can be set according to requirements.

As can be seen from the above, in the embodiment of the present application, the display panel 101 may include a plurality of photosensitive control circuits 201 disposed in the display area and a plurality of sub-pixels, wherein the sub-pixels have an effective display area. The plurality of light sensing control circuits 201 described above may constitute the light sensing unit 13 for detecting ambient light. Further, the light sensing control circuit 201 includes a switching transistor Tc and a light sensing element coupled to the switching transistor Tc, and in this case, the light sensing control circuit 201 is located between the effective display areas of two adjacent sub-pixels. Based on this, the photosensor is used to perform photoelectric conversion on light incident on the display screen 101 and generate an electrical signal, and the light sensing control circuit 201 is used to output the electrical signal when the switching transistor Tc is in a conducting state. Therefore, the brightness of the display screen is adjusted according to the acquired electric signals, and the function of adjusting the brightness of the equipment according to the brightness of light is realized.

Furthermore, as can be seen from the above description, in the related solution shown in fig. 4c, the light sensor 200 is disposed in the bang area 100 of the electronic device 01, so as shown in fig. 4d (a cross-sectional view taken along a-a in fig. 4 c), the sub-pixels 105 cannot be disposed in the bang area 100 due to the light sensor 200 being disposed at the position below the cover 503 of the electronic device 01 and below the bang area 100, which results in a decrease in the screen duty ratio of the screen. However, compared to the scheme shown in fig. 4c, the scheme of the present application is as shown in fig. 4e, and the light sensing control circuit 201 can be disposed in the non-effective display area 106 between two adjacent pixel units 202. Alternatively, the photosensitive control circuit 201 is disposed in the non-effective display region 106 between two adjacent sub-pixels 105, so that the area of the region below the cover 503 where the sub-pixels 105 can be laid out can be increased, and the bang region of the display screen 101 can be reduced or removed, thereby improving the screen occupation ratio of the electronic device 01.

The following describes a process of manufacturing the light sensing control circuit 201 in the display panel 101 by taking fig. 3b as an example.

First, as shown in fig. 5a, on the substrate 130, a buffer layer 311 is formed by Chemical Vapor Deposition (CVD), and then an active layer 314 of the switching transistor Tc is formed on a surface of the buffer layer 311 on a side away from the substrate 130 by Physical Vapor Deposition (PVD).

Then, a gate insulating layer 312 is formed over the substrate over which the buffer layer 311 is formed by a CVD process. The gate insulating layer 312 covers the active layer 314 of the switching transistor Tc. Next, a PVD process may be performed on a surface of the gate insulating layer 312 away from the substrate 130 to simultaneously form the first gate 302 of Tc and the second gate 307 of BG. Thereafter, an intermediate layer 313 is formed overlying the first gate 302 and the second gate 307 using a CVD process.

Thereafter, a first recess 320 and a second recess 321 are formed at both ends of the active layer 314 of the switching transistor Tc, and a third recess 322 is formed at one end of the second gate electrode 307 using a dry etching process. The first and

second grooves

320 and 321 are made to penetrate the intermediate layer 313 and the gate insulating layer 312 to the active layer 314 of the switching transistor Tc. The third recess 322 is made to penetrate the intermediate layer 313 to the second gate electrode 307.

Next, as shown in fig. 5b, a source electrode s and a drain electrode d are formed at both ends of the active layer 314 of the switching transistor Tc, respectively, by a PVD process.

Because the source electrode s and the drain electrode d of the phototriode BG are made of the same layer and the same material as the source electrode s and the drain electrode d of the switch transistor Tc, the source electrode s and the drain electrode d of the phototriode BG can be simultaneously manufactured by using the same mask plate when the source electrode s and the drain electrode d of the switch transistor Tc are manufactured. In addition, the drain d of the switching transistor Tc is insulated from the source s of the phototransistor BG. The source s and the drain d of the phototransistor BG and the source s and the drain d of the switching transistor Tc may be made of a metal material such as copper (Cu), aluminum (Al), or gold (Au).

In the present embodiment, the "same layer" refers to a layer structure formed by forming a film layer for forming a specific pattern by the same film forming process (e.g., a coating process) and then performing a patterning process by using the same mask (mask). Depending on the specific pattern, the same patterning process may include multiple exposure, development or etching processes, and the specific pattern in the formed layer structure may be continuous or discontinuous, and the specific patterns may be at different heights or have different thicknesses.

Then, a light shielding layer 303 is formed between the source s and the drain d of the switching transistor Tc, and the light shielding layer 303 is connected to the source s and the drain d of the switching transistor Tc, wherein the material constituting the light shielding layer 303 may be a black light absorbing material (e.g., black photoresist) or a metal (e.g., aluminum (Al), titanium (Ti), etc.) with an insulating surface coating, and may be prepared by photolithography or metal sputtering, respectively.

Then, an active layer 308 of the phototransistor BG is formed between the source s and the drain d of the phototransistor BG, so that the active layer 308 of the phototransistor BG is connected to the source s and the drain d of the phototransistor BG, respectively, wherein the active layer 308 of the phototransistor BG may be made of a semiconductor material, such as polysilicon, amorphous silicon, or the like, and may be made of a CVD process, or may be made of an organic semiconductor material, such as pentacene, iso-propyl silicon alkynyl pentacene, or the like, and may be made by a photolithography and coating method.

Next, in order to ensure the accuracy of the light sensing control circuit 201 collecting the light signal, as shown in fig. 5c, a filter layer 305 may be formed on a surface of the active layer 308 of the phototransistor BG, which is away from the first substrate 125, by a CVD process, so as to filter out a non-response band of the phototransistor BG.

Then, the passivation layer 310 covers the filter layer 305, and a fourth groove 323 and a fifth groove 324 are formed in the passivation layer 310 by a dry etching process, wherein the fourth groove 323 and the fifth groove 324 penetrate through the passivation layer 310.

Finally, the light blocking structure 304 is formed in the fourth groove 323 and the fifth groove 324, wherein the material constituting the light blocking structure 304 may be a black light absorbing material (e.g., black photoresist) or a metal with an insulating surface (e.g., aluminum (Al), titanium (Ti), etc.), and also may be prepared by photolithography or metal sputtering, respectively.

In other embodiments of the present application, the photosensitive element in the photosensitive control circuit 201 may be a photosensitive diode VD.

As shown in fig. 6a, a first terminal a of the photodiode VD is coupled to a first terminal of a switching transistor Tc, a second terminal B of the photodiode VD is coupled to a reading signal line RL, a gate of the switching transistor Tc is coupled to a gate signal line GL, and a second terminal of the switching transistor Tc is coupled to a first voltage terminal V1.

In other embodiments of the present application, the light sensing control circuit 201 may further include a resistor R.

In this example, the operation principle is basically the same as that of the above-mentioned scheme (the scheme in which the photosensitive element is a phototransistor BG), except that: in the above scheme, a high voltage needs to be applied to the first gate 302 to turn on the switching transistor Tc, and the phototransistor BG supplies a high voltage to the second gate 307 after the switching transistor Tc is turned on, so that the phototransistor BG is turned on, that is, the phototransistor BG is turned on after the switching transistor Tc is turned on, and at this time, the phototransistor BG has an effect of amplifying a current. In this example, the photodiode VD is originally turned on, the first gate 302 only plays a role of turning on the switching transistor Tc, and the photodiode VD also does not have a function of amplifying current, and other processes are the same as those described above and are not described herein again.

Fig. 6b is a cross-sectional view of the display screen 101 with the photodiode VD shown in fig. 1b, taken along the dashed line E-E, which differs from the above solution in that: the first pole of the switching transistor Tc is not connected to the second gate 307 and the first pole of the switching transistor Tc is connected to the a terminal of the photodiode VD. Other setting modes are the same as those described above, and are not described herein again.

The difference between the process for manufacturing the photosensitive control circuit 201 and the process for manufacturing the scheme when the photosensitive element is the phototriode BG is that: the third recess 322 is not formed at one end of the second gate 307 in this example, and the first pole of the switching transistor Tc is connected to the a terminal of the photodiode VD. The other procedures are the same as those described above, and are not described herein again.

It should be noted that in this example, the second gate 307 does not function, but is only in keeping with the above scheme when the photosensitive element is the phototransistor BG, so that the same mask can be used in this example and the above scheme, thereby facilitating the simultaneous production of the above two types of products and simplifying the process. In addition, the second gate 307 may not be provided in this example.

In other embodiments of the present application, the photosensitive element in the photosensitive control circuit 201 may be a photosensitive resistor RG. As shown in fig. 7, a first terminal I of the photo resistor RG is coupled to a first pole of the switching transistor Tc, a second terminal G of the photo resistor RG is coupled to the read signal line RL, a gate of the switching transistor Tc is coupled to the gate signal line GL, and a second pole of the switching transistor Tc is coupled to the first voltage terminal V1.

In other embodiments of the present application, the light sensing control circuit 201 may further include a resistor R. The working principle is the same as that of the photosensitive element being the photodiode VD, and the description is omitted here.

In addition, the cross-sectional view of the photosensitive control circuit 201 with the photo-resistor RG, which is cut along the dashed line E-E in fig. 1b, is the same as that in fig. 6b, except that the photo-diode VD in fig. 6b is replaced by the photo-resistor RG, and the description thereof is omitted.

The above description is made of a manufacturing process of the light sensing control circuit 201 in the display panel 101, and the following description is made of a configuration of the display panel 101 including the light sensing control circuit 201.

Example 1

In this example, the display screen 101 is a display screen 101 capable of self-light emission.

As shown in fig. 8a, the self-luminous display panel 101 may have a plurality of sub-pixels (sub-pixels) 105 arranged in an array. Further, the above-described display panel 101 includes a pixel circuit 104 and a light-emitting device 113 in the sub-pixel 105. The pixel circuit 104 drives the light emitting device 113 to emit light so that each sub-pixel 105 in the display screen 101 can perform display in a preset gray scale.

In some embodiments of the present application, the light emitting device 113 may be an Organic Light Emitting Diode (OLED). Alternatively, in other embodiments of the present application, the light emitting device 113 may be a micro Light Emitting Diode (LED), such as a micro LED, or a mini LED. The present application does not limit the type of the light emitting device 113 as long as the light emitting device 113 can emit light under the drive of the pixel circuit 104. For convenience of description, the light emitting device 113 is exemplified as an OLED.

In this case, the display panel 101 may further include a first substrate board 125 and a second substrate board 127 as shown in fig. 8b (a cross-sectional view taken along a broken line O-O in fig. 8 a). The light emitting device 113 is disposed between the first substrate 125 and the second substrate 127. The first substrate 125 is used to support the light emitting device 113, and the second substrate 127 is used to prevent water and oxygen in the air from entering the light emitting device 113 and adversely affecting the light emitting device 113.

Based on this, in some embodiments of the present application, as shown in fig. 8b, the photosensitive control circuit 201 may be disposed on a side of the first substrate 125 close to the second substrate 127. Alternatively, in other embodiments of the present application, the photosensitive control circuit 201 may be disposed on a side of the second substrate 127 away from the first substrate 125. The manner in which the light sensing control circuit 201 is arranged will be exemplified in detail in the following description.

In some embodiments of the present application, the display 101 may be a flexible display. At this time, the material constituting the first substrate 125 may be a flexible material, such as an organic material. The second substrate 127 may be an encapsulation layer including a plurality of organic thin film encapsulation layers for serving as a flexible base material and a plurality of inorganic thin film encapsulation layers for blocking water and oxygen. The organic thin film encapsulation layer and the inorganic thin film encapsulation layer are disposed alternately, and a layer of the encapsulation layer adjacent to the air and the light emitting device 113 is an inorganic thin film encapsulation layer. Alternatively, in other embodiments of the present application, when the display 101 is a hard display, the materials of the first substrate 125 and the second substrate 127 may be both hard transparent materials. Such as glass, sapphire, hard resin material, etc. In this case, the second substrate 127 may be a package cover.

In addition, the display 101 may further include a Pixel Definition Layer (PDL) 126 disposed on the first substrate 125 as shown in fig. 8 c. The pixel defining layer 126 may include a plurality of pixel banks 116, wherein the plurality of pixel banks 116 are arranged to surround the plurality of openings 120 in a crosswise manner (the pixel banks 116 are arranged in a crosswise manner in fig. 5 a). One of the plurality of light emitting devices 113 of the display screen 101 the light emitting device 113 may be disposed in one of the plurality of openings 120.

The position of the light emitting device 113 is an Active Area (AA) of the sub-pixel 105. The light emitting device 113 includes an anode 117, a light emitting layer 118, and a cathode 119 in this order on the side away from the first substrate board 125. In this case, when the cathode 119 and the anode 117 are energized, the light emitting layer 118 emits light by an electric field formed by the cathode 119 and the anode 117. The pixel partition walls 116 are used to separate adjacent sub-pixels 105 to define the area of the sub-pixels 105. In addition, the material of the pixel partition wall 116 may be silicon oxide (SiOx), silicon nitride (SiNx), or the like, and the pixel partition wall 116 may transmit light.

It should be noted that, as can be seen from fig. 8c, the pixel circuit 104 is provided with the pixel partition wall 116 on the side away from the first substrate 125, that is, the pixel partition wall 116 covers the surface of the pixel circuit 104, and for convenience of description, the pixel partition wall 116 is not shown on the surface of the pixel circuit 104 in fig. 8 a.

In this case, in order to avoid the interference of the light sensing control circuit 201 on the optical path of the pixel, the light sensing control circuit 201 may be located between the effective display areas of two adjacent sub-pixels 105, which are the positions corresponding to the light emitting devices 113. In order to make the photosensitive control circuit 201 be located between the effective display areas of two adjacent sub-pixels 105, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125.

In some embodiments of the present application, in order to dispose the photosensitive control circuit 201 on the side of the first substrate 125 close to the second substrate 127, as shown in fig. 8d, the switching transistor Tc and the photosensitive element in the photosensitive control circuit 201 may be directly fabricated on the surface of the side of the first substrate 125 close to the second substrate 127. The vertical projection of the photosensitive control circuit 201 on the first substrate 125 is located within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, and the specific arrangement manner is the same as that described above, and is not described herein again.

The switching transistor Tc in the photosensitive control circuit 201 and the transistor 504 in the pixel circuit 104 may or may not be shared (the scheme shown in the figure is not shared), and may be set according to the requirement, which is not limited in the present application. When the switching transistor Tc in the light sensing control circuit 201 is shared with the transistor 504 in the pixel circuit 104, both the pixel and the light sensing control circuit 201 can be controlled by the pixel circuit 104. When the power is not shared, the on-off frequency of the switch transistor Tc can be set according to the frequency of data acquisition required, so that the purpose of reducing power consumption is achieved.

It should be noted that, the above description is given by taking the photosensitive element in the photosensitive control circuit 201 as the phototransistor BG as an example, in this example, the photosensitive element may also be a photodiode VD or a photoresistor, at this time, in the above cross-sectional view of the display screen 101, only the phototransistor BG in fig. 8d is replaced by the photodiode VD or the photoresistor, the specific setting is the same as the above, and details are not described here again.

In other embodiments of the present application, in order to dispose the photosensitive control circuit 201 on the side of the second substrate 127 away from the first substrate 125, as shown in fig. 8e, the switching transistor Tc and the photosensitive element in the photosensitive control circuit 201 may be fabricated directly on the surface of the second substrate 127 on the side away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 on the optical path of the pixel, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of two adjacent sub-pixels 105.

In this embodiment, the photosensitive element may also be a phototransistor BG, a photodiode VD, or a photoresistor (fig. 8e shows that the photosensitive element is the phototransistor BG as an example), and regarding the setting manner of the photosensitive control circuit 201, compared to the manner that the photosensitive control circuit 201 is disposed on the side surface of the first substrate 125 close to the light emitting device 113, only the first substrate 125 is replaced by the second substrate 127, and other settings are the same, and are specifically set as the above, and are not described here again.

In other embodiments of the present application, the photosensitive control circuit 201 may be disposed on a surface of the pixel defining layer 126 away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 on the optical path of the pixel, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of two adjacent sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototriode BG, a photodiode VD, or a photoresistor, and regarding the configuration mode of the photosensitive control circuit 201, compared to the configuration mode that the photosensitive control circuit 201 is disposed on the side surface of the first substrate 125 close to the light emitting device 113, only the first substrate 125 is replaced with the pixel defining layer 126, and other configurations are the same, and are not described again here.

In other embodiments of the present application, as shown in fig. 9, the display screen 101 further includes a touch layer 501, the touch layer 501 is disposed on a side of the second substrate 127 away from the first substrate 125, in which case, the photosensitive control circuit 201 may be disposed on a surface of the touch layer 128 away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 on the optical path of the pixel, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of two adjacent sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototriode BG, a photodiode VD, or a photoresistor, and regarding the configuration mode of the photosensitive control circuit 201, compared to the configuration mode in which the photosensitive control circuit 201 is disposed on the side surface of the first substrate 125 close to the light emitting device 113, only the first substrate 125 is replaced with the touch layer 501, and other configurations are the same, and are not described here again.

In other embodiments of the present application, as shown in fig. 9, the display panel 101 may further include an upper polarizer 502, where the upper polarizer 502 is disposed on a side of the second substrate 127 away from the first substrate 125, and in this case, the light sensing control circuit 201 may be disposed on a surface of the upper polarizer 502 away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 on the optical path of the pixel, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of two adjacent sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototriode BG, a photodiode VD, or a photoresistor, and regarding the configuration mode of the photosensitive control circuit 201, compared to the configuration mode that the photosensitive control circuit 201 is disposed on the side surface of the first substrate 125 close to the light emitting device 113, only the first substrate 125 is replaced with the upper polarizer 502, and other configurations are the same, and are not described herein again.

In other embodiments of the present application, as shown in fig. 9, the display screen 101 further includes a cover plate 503, and the cover plate 503 is disposed on a side of the second substrate 127 away from the first substrate 125, in this case, the photosensitive control circuit 201 may be disposed on a surface of the cover plate 503 away from the first substrate 125. In order to avoid the interference of the photosensitive control circuit 201 on the optical path of the pixel, the vertical projection of the photosensitive control circuit 201 on the first substrate 125 needs to be within the range of the vertical projection of the pixel partition wall 116 on the first substrate 125, so that the photosensitive control circuit 201 is located between the effective display areas of two adjacent sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototriode BG, a photodiode VD, or a photoresistor, and regarding the configuration mode of the photosensitive control circuit 201, compared to the configuration mode that the photosensitive control circuit 201 is disposed on the side surface of the first substrate 125 close to the light emitting device 113, only the first substrate 125 is replaced with the cover plate 503, which is the same as the above, and the specific configuration is the same as above, and is not described here again.

Note that, since the first substrate board 125 and the second substrate board 127 are the same as the photosensitive control circuit 201, they are manufactured by a mask process. Therefore, when the photosensitive control circuit 201 is disposed on the surface of the second substrate 127 away from the first substrate 125 or the surface of the second substrate 127 away from the first substrate 125, the process can be facilitated, and the station change and the equipment change during the production process can be simplified. Therefore, it is preferable to provide the light sensing control circuit 201.

Example two

In this example, the display 101 is a Liquid Crystal Display (LCD) 101. Since the lcd panel cannot emit light, a backlight unit (BLU) is required to provide light to the lcd panel 101 so that each sub pixel 105 shown in fig. 10a in the lcd panel 101 can emit light, thereby displaying images.

The LCD101 may include, as shown in fig. 10b (a cross-sectional view cut along a dotted line F-F in fig. 10 a), a first substrate 125, a Color Filter (CF) substrate 604, a liquid crystal layer 601, a second substrate 127, and a touch layer 501, an upper polarizer 502, and a cover plate 503 sequentially separated from the second substrate 127. On the first substrate 125, a pixel circuit (not shown) is provided in each sub-pixel 105. The pixel circuit can be used to control the deflection angle of the liquid crystal molecules 603 in the liquid crystal layer 601 corresponding to the position of the sub-pixel 105 where the pixel circuit is located, so as to control the amount of light provided by the BLU passing through the sub-pixel 105, thereby achieving the purpose of controlling the sub-pixel 105 to display gray scale.

In order to avoid interference between different effective display areas AA, black matrixes 602 are disposed between the different effective display areas AA, wherein an area between the black matrixes 602 is an effective display area. In addition, a liquid crystal cell (cell) for accommodating the liquid crystal layer 601 is formed between the first substrate 125 and the second substrate 127. The second substrate 127 is used to prevent water and oxygen in the air from entering the liquid crystal layer 601 and damaging the liquid crystal molecules 603. The material constituting the first substrate 125 and the second substrate 127 may be both hard transparent materials. Such as glass, sapphire, hard resin material, etc. In this case, the second substrate 127 may be a package cover.

In this case, when the electronic device 01 has a function of adjusting the brightness of the display screen 101 according to the light, the electronic device 01 further includes a light sensing control circuit 201, and in order to avoid interference of the light sensing control circuit 201 on the optical path of the pixel, the light sensing control circuit 201 may be located between the effective display areas of two adjacent sub-pixels 105.

As can be seen from the above, the position between the effective display areas of two adjacent sub-pixels 105 is the position corresponding to the black matrix 602. In order to make the photosensitive control circuit 201 be located between the effective display areas of two adjacent sub-pixels 105, the vertical projection of the photosensitive control circuit 201 on the second substrate 127 needs to be within the range of the vertical projection of the black matrix 602 on the second substrate 127.

In some embodiments of the present application, as shown in fig. 10b, the photosensitive control circuit 201 may be disposed on a side of the second substrate 127 away from the first substrate 125. Specifically, as shown in fig. 10c, the switching transistor Tc and the photosensitive element in the photosensitive control circuit 201 may be directly formed on the surface of the second substrate 127 on the side away from the first substrate 125.

In this example, the vertical projection of the photosensitive control circuit 201 on the second substrate 127 is within the range of the vertical projection of the black matrix 602 on the second substrate 127, and other configurations are the same as those described above, and are not described here again.

In addition, in this example, the photosensitive element may also be set as a photodiode VD or a photosensitive resistor, and at this time, in the above cross-sectional view of the display screen 101, only the photodiode VD or the photosensitive resistor is used to replace the photo transistor BG in fig. 10c, and the specific setting is the same as that described above, and is not described here again.

In other embodiments of the present application, as shown in fig. 10d, the display screen 101 may further include a touch layer 501, where the touch layer 501 is disposed on a side of the second substrate 127 away from the first substrate 125, and in this case, the photosensitive control circuit 201 may be disposed on a surface of the touch layer 501 away from the first substrate 125. In order to avoid the interference of the light sensing control circuit 201 on the optical path of the pixel, the vertical projection of the light sensing control circuit 201 on the second substrate 127 needs to be within the range of the vertical projection of the black matrix 602 on the second substrate 127, so that the light sensing control circuit 201 is located between the effective display areas of two adjacent sub-pixels 105.

In this example, the photosensitive element may also be set as a phototriode BG, a photodiode VD, or a photoresistor, and regarding the setting manner of the photosensitive control circuit 201, compared to the above-mentioned manner of setting the photosensitive control circuit 201 on the surface of the second substrate 127 away from the first substrate 125, only the second substrate 127 is replaced with the touch layer 501, and other settings are the same, and are not described here again.

In other embodiments of the present application, as shown in fig. 10d, the display panel 101 may further include an upper polarizer 502, where the upper polarizer 502 is disposed on a side of the second substrate 127 away from the first substrate 125, and in this case, the light sensing control circuit 201 may be disposed on a side surface of the upper polarizer 502 away from the first substrate 125. In order to avoid the interference of the light sensing control circuit 201 on the optical path of the pixel, the vertical projection of the light sensing control circuit 201 on the second substrate 127 needs to be within the range of the vertical projection of the black matrix 602 on the second substrate 127, so that the light sensing control circuit 201 is located between the effective display areas of two adjacent sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototriode BG, a photodiode VD, or a photoresistor, and regarding the configuration manner of the photosensitive control circuit 201, compared to the above-mentioned manner of configuring the photosensitive control circuit 201 on the side surface of the second substrate 127 away from the first substrate 125, only the second substrate 127 is replaced with the upper polarizer 502, and other configurations are the same, and are not described herein again.

In other embodiments of the present application, as shown in fig. 10d, the display screen 101 may further include a cover plate 503, where the cover plate 503 is disposed on a side of the second substrate 127 away from the first substrate 125, in this case, the photosensitive control circuit 201 may be disposed on a surface of the cover plate 503 away from the first substrate 125, and in order to avoid interference of the photosensitive control circuit 201 on the optical path of the pixel, a vertical projection of the photosensitive control circuit 201 on the second substrate 127 needs to be located within a range of a vertical projection of the black matrix 602 on the second substrate 127, so that the photosensitive control circuit 201 is located between effective display areas of two adjacent sub-pixels 105.

In this embodiment, the photosensitive element may also be configured as a phototriode BG, a photodiode VD, or a photoresistor, and regarding the configuration mode of the photosensitive control circuit 201, compared to the above-mentioned configuration mode in which the photosensitive control circuit 201 is disposed on the surface of the second substrate 127 away from the first substrate 125, only the second substrate 127 is replaced with the cover plate 503, and other configurations are the same as those described above, and are not repeated here.

It should be noted that, since the pixel circuit 104 can control the deflection angle of the liquid crystal molecules 603 in the liquid crystal layer 601, so that the amount of light passing through the sub-pixel 105 is different, thereby achieving the purpose of controlling the sub-pixel 105 to display gray scales, the lower portion of the liquid crystal layer is not transparent. Therefore, for convenience of manufacturing, when the display 101 is a liquid crystal display, the present application preferably considers that the light sensing control circuit 201 is disposed above the liquid crystal layer 601.

The embodiment of the present application further provides an electronic device, where the electronic device includes any one of the display screens described above, and the electronic device has the same technical effects as the display screen provided in the foregoing embodiment, and details are not repeated here.

The above description is only an embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions within the technical scope of the present disclosure should be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A display screen, wherein the display screen has a display area; the display screen comprises a photosensitive unit and a plurality of sub-pixels, wherein the photosensitive unit is arranged in the display area, and the sub-pixels are provided with effective display areas;

the photosensitive unit comprises at least one photosensitive control circuit; the photosensitive control circuit comprises a switching transistor and a photosensitive element coupled with the switching transistor; the photosensitive control circuit is positioned between the effective display areas of two adjacent sub-pixels; the photosensitive element is used for performing photoelectric conversion on light rays incident to the display screen and generating an electric signal; the photosensitive control circuit is used for outputting the electric signal when the switch transistor is in a conducting state.

2. The display screen of claim 1, further comprising:

a first substrate base plate;

a pixel defining layer disposed on the first substrate and including a plurality of pixel banks; the pixel partition walls are transversely and longitudinally arranged in a surrounding mode to form a plurality of openings;

a plurality of light emitting devices, one of the light emitting devices being located within one of the openings;

the second substrate base plate is arranged on one side, far away from the first substrate base plate, of the light-emitting device;

wherein, the vertical projection of the photosensitive control circuit on the first substrate base plate is positioned in the range of the vertical projection of the pixel division wall on the first substrate base plate.

3. Display screen according to claim 2,

the photosensitive control circuit is arranged on one side surface of the first substrate base plate close to the light-emitting device.

4. The display screen of claim 2, wherein the photosensitive control circuit is disposed on a surface of the pixel defining layer away from the first substrate.

5. The display screen of claim 1, further comprising:

a first substrate base plate;

a second substrate base plate;

a liquid crystal layer disposed between the first substrate and the second substrate;

the black matrix is positioned on the surface of one side, close to the first substrate, of the second substrate;

wherein, the vertical projection of the photosensitive control circuit on the second substrate base plate is positioned in the range of the vertical projection of the black matrix on the second substrate base plate.

6. The display screen according to claim 2 or 5, wherein the photosensitive control circuit is arranged on a surface of one side of the second substrate base plate far away from the first substrate base plate.

7. The display screen according to claim 2 or 5, wherein the display screen further comprises a touch layer; the touch layer is arranged on one side, far away from the first substrate, of the second substrate; the photosensitive control circuit is arranged on the surface of one side, far away from the first substrate base plate, of the touch layer.

8. The display screen according to claim 2 or 5, wherein the display screen further comprises an upper polarizer; the upper polaroid is arranged on one side, far away from the first substrate base plate, of the second substrate base plate; the photosensitive control circuit is arranged on the surface of one side, far away from the first substrate base plate, of the upper polaroid.

9. A display screen according to claim 2 or 5, characterised in that the display screen further comprises a cover plate; the cover plate is arranged on one side, far away from the first substrate, of the second substrate; the photosensitive control circuit is arranged on the surface of one side, far away from the first substrate, of the cover plate.

10. The display screen according to any one of claims 1 to 9, wherein the display screen further comprises a gating signal line and a reading signal line which are crossed horizontally and vertically;

the photosensitive element comprises a phototriode; the grid electrode of the phototriode is coupled with the first pole of the switching transistor, the first pole of the phototriode is coupled with the reading signal wire, and the second pole of the phototriode is coupled with the first voltage end;

the gate of the switching transistor is coupled to the gate signal line, and the second pole of the switching transistor is coupled to the second voltage terminal.

11. The display screen according to any one of claims 1 to 9, wherein the display screen further comprises a gating signal line and a reading signal line which are crossed horizontally and vertically;

the photosensitive element comprises a photosensitive diode or a photosensitive resistor;

a first terminal of the photosensor is coupled to a first pole of the switching transistor, and a second terminal of the photosensor is coupled to the read signal line;

the gate of the switching transistor is coupled to the gate signal line, and the second pole of the switching transistor is coupled to the first voltage terminal.

12. A display screen according to claim 10 or 11, wherein the light sensing control circuit further comprises a resistor; a first end of the resistor is coupled to the read signal line, and a second end of the resistor is coupled to a third voltage end;

wherein a voltage of the first voltage terminal is greater than a voltage of the third voltage terminal.

13. A display screen according to any one of claims 1 to 12, wherein the display screen further comprises a filter layer; the filter layer is arranged on one side of the light incident surface of the photosensitive element and covers the light incident surface of the photosensitive element; the filter layer is used for filtering light rays incident to the display screen;

the filter layer comprises a silicon oxide layer and a titanium oxide layer which are laminated.

14. A display screen in accordance with any one of claims 1-12, wherein the display screen further comprises a light blocking structure; the light blocking structure is arranged on one side where the light incident surface of the photosensitive element is located and surrounds the photosensitive element for a circle.

15. The display screen of claim 14, wherein the light incident surface of the light sensitive element is circular;

the ratio of the radius R of the light incident surface of the photosensitive element to the height H of the light blocking structure is R/H (tan theta);

the angle theta is an included angle between incident light and the normal of the light incident surface of the photosensitive element; the angle theta is within the range of 5-30 degrees.

16. A display screen in accordance with any one of claims 1-15, wherein the switching transistor is a top gate transistor; the display screen also comprises a shading layer;

the light shielding layer is located on one side, far away from the active layer of the switch transistor, of the gate of the switch transistor, and the light shielding layer covers the gate of the switch transistor.

17. An electronic device, characterized in that it comprises a display screen according to any one of claims 1-16.