CN111525393A - Nano laser with electrically adjustable wavelength - Google Patents

Nano laser with electrically adjustable wavelength Download PDF

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Publication number
CN111525393A
CN111525393A CN202010092752.0A CN202010092752A CN111525393A CN 111525393 A CN111525393 A CN 111525393A CN 202010092752 A CN202010092752 A CN 202010092752A CN 111525393 A CN111525393 A CN 111525393A
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cadmium sulfide
wavelength
nanolaser
electrically
nano
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潘安练
杨鑫
陈舒拉
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Hunan University
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Hunan University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3018—AIIBVI compounds

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention relates to an electrically wavelength-controllable nano laser. The invention uses single nano single crystal cadmium sulfide nanobelt as a gain medium, uses femtosecond optical pumping with ultrahigh instantaneous power to successfully realize a nano laser based on a cadmium sulfide nano structure, and further realizes the electrically adjustable wavelength nano laser by introducing external bias voltage. The method has important reference value for solving the problem of the silicon-on-silicon light source in the modern integrated chip. The cadmium sulfide nanobelt used by the invention has the thickness of about 100 nanometers, the width of about 5 micrometers and the length of more than ten micrometers. The specific synthesis method of the nano material comprises the following steps: firstly, a layer of gold film is deposited on a cleaned silicon wafer, then cadmium sulfide powder is used as a source material, and a VLS growth mechanism is utilized to grow cadmium sulfide nanobelts on the silicon wafer plated with the gold film.

Description

Nano laser with electrically adjustable wavelength
Technical Field
The invention relates to an electrically wavelength-tunable nanolaser; in particular to an electrically adjustable wavelength nanometer laser taking a single crystal cadmium sulfide nanometer band as a gain medium.
Background
Gordon Moore, a member of the Intel founders, proposed a well-known Moore's law in 1965, and the number of components that can be accommodated on an integrated circuit doubled approximately every 18-24 months. Predictions about semiconductor processes and technology development released by the International Technology Roadmap for Semiconductors (ITRS) show that integrated circuits will reach processes below 10 nm in 2022. The development of information technology has entered the nanotechnology era today. Over the past years, various novel nano optoelectronic devices such as transistors, sensors, photodetectors and the like have been successfully constructed based on low-dimensional semiconductor nanomaterials, and these studies provide basic unit devices for new generations of integrated circuits. However, single-nanometer light sources and optical modulators (optical switches) with important application values in optical communication and photonic chip research are still in the process of slow development and still face challenges. Therefore, the development of high-efficiency nano lasers with electrical tunability provides new opportunities for the design of a new generation of nano optoelectronic integrated systems.
High efficiency nanolasers with electrical tunability have important potential applications in the field of nanophotonics and optoelectronics, such as in on-chip optical information processing, nanoscopy, super-resolution imaging, and biosensing. More importantly, the ability to perform a wide range of modulation of stimulated emission wavelengths in a continuous and reversible manner is central to high performance wavelength division multiplexing. So far, the room temperature wavelength variable nano laser is mainly realized by two strategies, the first strategy is to realize the regulation and control of a gain spectrum by utilizing the near-continuous variable of semiconductor alloy components through band gap engineering, and further realize the regulation and control of a lasing wavelength. The second strategy is to design an optical cavity structure and realize the regulation and control of the lasing wavelength by utilizing the coupling effect of the cavity and the surface plasmon. For example, enhancement of the burst-Moss effect by a gold film can achieve a shift of lasing wavelength of about 20 nm (483-504). Although great success has been achieved by the above-described scheme, there is a need for a device architecture with smaller miniaturization and simplicity for better circuit integration and operational reliability. Therefore, the method has important significance in exploring the wavelength tunable nano laser with simple and convenient operation.
Until now, there has been no nanolaser that realizes electrically controllable wavelength in a cadmium sulfide nanostructure, and this control means has reversibility.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides an electrically adjustable wavelength nanometer laser.
The invention relates to an electrically adjustable wavelength nanometer laser, which comprises a single-crystal cadmium sulfide nanobelt, a pumping light source, a voltage source meter and an ITO electrode;
the cadmium sulfide nanobelt crosses the ITO electrode channel, and applies an external bias voltage to part of cadmium sulfide in the channel through the ITO electrode;
the ITO electrode has a pre-designed pattern and is prepared by using a photoetching process.
The invention relates to an electrically wavelength-controllable nano laser, wherein a single-crystal cadmium sulfide nanobelt has the thickness of 100-120 nanometers, the width of 3-6 micrometers and the length of 13-17 micrometers. As a preference, the first and second liquid crystal compositions are,
the invention relates to an electrically adjustable wavelength nanometer laser, wherein a pumping light source is 470 nanometers of femtosecond light, the repetition frequency is 1KHZ, and the pulse width is 120 fs.
The invention relates to an electrically wavelength-controllable nano laser, wherein the wavelength range of a signal light source is 510-520 nanometers.
The invention relates to an electrically adjustable wavelength nanometer laser, wherein a voltage source meter is Keithley 2400.
The invention relates to an electrically adjustable wavelength nanometer laser, in particular to a preparation method of a single crystal cadmium sulfide nanobelt, which comprises the following steps:
putting CdS powder as a source into a ceramic boat, then putting the ceramic boat into a furnace for heating, and finally putting the silicon wafer plated with the gold film at the downstream position of a quartz tube for deposition; flushing a quartz tube cavity with high-purity argon at a flow rate of 45-65sccm before growth; then the temperature of the furnace is raised to 780-820 ℃ within 25-35 minutes and is kept for 80-120 minutes; the whole growth process is kept at the pressure of 280-320 Torr; and finally, naturally cooling the hearth to room temperature. According to the electrically wavelength-controllable nano laser, the purity of the CdS powder is more than or equal to 99.999 percent; the purity of the high-purity argon is more than or equal to 99.999 percent.
The invention relates to an electrically wavelength-controllable nano laser, wherein the length of an ITO electrode channel is 6-7 microns.
The invention relates to an electrically adjustable wavelength nanometer laser, wherein an ITO electrode is prepared by the following steps:
cutting a whole piece of ITO glass into a specific size, spin-coating a layer of photoresist, and forming a pre-designed pattern on the photoresist after pre-baking exposure and post-baking development; finally, the ITO glass is put into ITO etching liquid for etching, and an ITO electrode with patterns is formed after washing and drying; the photoresist used in this process is a negative photoresist.
The ITO in the present invention is conductive and thus used as an electrode material, and the ITO electrode channel refers to a portion between ITO electrodes where ITO is etched away.
The voltage source table used in the present invention is Keithley 2400.
The regulation and control mode of the electrically wavelength-controllable nano laser has reversibility.
The electrically controlled wavelength amplitude of the invention can reach 10 nanometers.
The invention takes the single crystal cadmium sulfide nanobelt as a gain medium, uses femtosecond optical pumping to successfully realize the nano laser based on the cadmium sulfide nano structure, and further realizes the electrically controllable wavelength nano laser by introducing external bias. The method has important reference value for solving the problem of the silicon-on-silicon light source in the modern integrated chip.
The invention realizes the electrically adjustable wavelength nanometer laser in the cadmium sulfide nanometer structure for the first time, which provides a new opportunity for the design of a new generation of nanometer photoelectronic integrated system.
Drawings
FIG. 1 is a schematic diagram of a device structure of an electrically tunable wavelength nanolaser.
Fig. 2 is composed of fig. 2a-2 e.
FIGS. 2a-2c show the lasing spectra with pump powers at 0.8, 1.2 and 1.8 threshold powers for applied electric fields of 0KV/cm, 6.1KV/cm and 15.4KV/cm, respectively.
The inset in fig. 2a is an optical microscope picture of the laser and a dark field fluorescence picture under femtosecond optical pumping.
Fig. 2d and 2e show the variation of lasing wavelength with increasing applied electric field and the variation of lasing wavelength with decreasing applied electric field, respectively.
Figure 3 is formed by figures 3a-3 b.
FIG. 3a is the variation of the photoluminescence spectrum of cadmium sulfide nanobelts with the applied bias voltage, and the inset is the device structure diagram of the experimental sample.
FIG. 3b shows the absorption spectrum and photoluminescence spectrum of cadmium sulfide nanobelts under the action of electric fields of 0KV/cm and 13.5 KV/cm. Wherein the dotted line is the electroluminescence spectrum.
FIG. 4 shows the band gap degradation of cadmium sulfide calculated from the absorption spectrum of cadmium sulfide and the variation of source and drain currents with applied bias.
Fig. 5 is composed of fig. 5a and 5 b.
FIG. 5a is a graph showing the relationship between the photoluminescence spectrum of cadmium sulfide nanobelts and the temperature.
FIG. 5b shows the variation of the band gap of cadmium sulfide nanoribbon (calculated by photoluminescence spectroscopy) with temperature.
Fig. 6 is composed of fig. 6a-6 d.
FIG. 6a is a temperature dependent Raman spectrum of cadmium sulfide nanoribbons.
FIG. 6b is a graph showing the relationship between the frequency of cadmium sulfide second order phonon and the frequency shift of the second order phonon as a function of temperature.
FIG. 6c is a Raman spectrum of cadmium sulfide nanobelt current density dependence.
FIG. 6d is a graph showing the dependence of cadmium sulfide second order phonon frequency and temperature on current density.
As can be seen from the lasing spectra in FIGS. 2d and 2e, the electrically tunable wavelength control method adopted by the present invention is reversible.
Detailed Description
The invention will now be further described with reference to the accompanying drawings
Example 1
CdS powder (99.999% Alfa Aesar) is used as a source and put into a ceramic boat, then the ceramic boat is put into a furnace to be heated (OTF-1200X), and finally, a silicon wafer plated with a gold film is placed at the downstream position of a quartz tube to be deposited. Prior to growth, the quartz lumen was flushed with high purity argon at a flow rate of 45-65sccm (99.999%). The furnace temperature was then raised to 780-820 ℃ over 25-35 minutes and held for 80-120 minutes. The entire growth process was maintained at a pressure of 280-320 Torr. And finally, naturally cooling the hearth to room temperature.
Taking a whole piece of ITO glass, cutting the whole piece of ITO glass into a specific size, spin-coating a layer of photoresist, and forming a pre-designed pattern on the photoresist after pre-baking exposure and post-baking development. And finally, placing the ITO glass into ITO etching liquid for etching, and forming an ITO electrode with a pattern after washing and drying. Then transferring the grown cadmium sulfide nanobelt to an ITO electrode at a fixed point to prepare the laser device with the electrically adjustable wavelength.
Firstly, the cadmium sulfide nanobelt is pumped by femtosecond light with ultrahigh instantaneous power and generates laser, then the cadmium sulfide nanobelt is biased by an ITO electrode, the laser wavelength can be seen to be deviated, and the nano laser with the electrically adjustable wavelength is shown to be realized.
Example 2 study of the mechanism of regulation
The voltage dependent absorption spectrum curve and the photoluminescence spectrum show that the band gap gradually decreases with increasing voltage. The band gap reduction value is inversely related to the current curve, which shows that the band gap reduction is related to the thermal effect caused by the drift current.
From the current density-dependent Raman spectrum, it can be seen that 12kA/cm2The current density of the band can heat the cadmium sulfide nano-band to 380K, and according to a temperature-dependent photoluminescence spectrum, the temperature rise of 80K can only reduce the band gap by 39 mev. This is in contrast to the experimental observation of a bandgap degradation of 55 mev. Indicating that the effect of the F-K effect on the band gap of cadmium sulfide cannot be completely neglected.
Comparative example 1
The growth time was shortened to five minutes, and other conditions were completely the same as those for preparing the single-crystal cadmium sulfide nanostructure in example 1, and a single-crystal cadmium sulfide nanobelt was hardly obtained on the substrate.
Comparative example 2
The growth temperature was reduced to 700 degrees celsius, other conditions were completely the same as those for preparing the single-crystal cadmium sulfide nanostructure in example 1, and the single-crystal cadmium sulfide nanobelt could not be obtained almost on the substrate.

Claims (10)

1. An electrically wavelength-tunable nanolaser, comprising: the nano laser comprises a single-crystal cadmium sulfide nanobelt, a pumping light source, a voltage source meter and an ITO electrode;
the cadmium sulfide nanobelt crosses the ITO electrode channel, and applies an external bias voltage to part of cadmium sulfide in the channel through the ITO electrode;
the ITO electrode has a pre-designed pattern and is prepared by using a photoetching process.
2. An electrically tunable wavelength nanolaser according to claim 1 wherein: the thickness of the single crystal cadmium sulfide nanobelt is 100-120 nanometers, the width is 3-6 micrometers, and the length is 13-17 micrometers.
3. An electrically tunable wavelength nanolaser according to claim 1 wherein: the pump light source is 470 nm femtosecond light, the repetition frequency is 1KHZ, and the pulse width is 120 fs.
4. An electrically tunable wavelength nanolaser according to claim 1 wherein: the wavelength range of the signal light source is 510-520 nanometers.
5. An electrically tunable wavelength nanolaser according to claim 1 wherein: the voltage source table is Keithley 2400.
6. The electrically tunable wavelength nanolaser according to claim 1, wherein the method of preparing single crystal cadmium sulfide nanobelts comprises the steps of:
putting CdS powder as a source into a ceramic boat, then putting the ceramic boat into a furnace for heating, and finally putting the silicon wafer plated with the gold film at the downstream position of a quartz tube for deposition; flushing a quartz tube cavity with high-purity argon at a flow rate of 45-65sccm before growth; then the temperature of the furnace is increased to 780-820 ℃ within 25-35 minutes, and the constant temperature is kept for 80-120 minutes; the whole growth process is kept at the pressure of 280-320 Torr; and finally, naturally cooling the hearth to room temperature.
7. An electrically tunable wavelength nanolaser according to claim 1 wherein: the purity of the CdS powder is more than or equal to 99.999 percent; the purity of the high-purity argon is more than or equal to 99.999 percent.
8. An electrically tunable wavelength nanolaser according to claim 1 wherein: the channel length of the ITO electrode was 6-7 microns.
9. An electrically tunable wavelength nanolaser according to claim 1, wherein the ITO electrode is prepared by the steps of:
cutting a whole piece of ITO glass into a specific size, spin-coating a layer of photoresist, and forming a pre-designed pattern on the photoresist after pre-baking exposure and post-baking development; finally, the ITO glass is put into ITO etching liquid for etching, and an ITO electrode with patterns can be formed after washing and drying; the photoresist used in this process is a negative photoresist.
10. An electrically tunable wavelength nanolaser according to claim 1 wherein: the electrically controlled wavelength amplitude can reach 10 nm.
CN202010092752.0A 2020-02-14 2020-02-14 Nano laser with electrically adjustable wavelength Pending CN111525393A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113871515A (en) * 2021-09-28 2021-12-31 湖南大学 Waveguide integrated light emitting diode

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CN102623891A (en) * 2012-01-17 2012-08-01 东南大学 Method for preparing micro-laser array
CN104143586A (en) * 2014-07-10 2014-11-12 北京理工大学 Method for manufacturing photoelectric detector based on integrated chip with alloy semiconductor nano-structure
CN107104357A (en) * 2017-06-30 2017-08-29 黄山博蓝特半导体科技有限公司 A kind of preparation method of nano-sized lasers array
US20180045953A1 (en) * 2016-04-29 2018-02-15 The Board Of Trustees Of The Leland Stanford Junior University Device components formed of geometric structures
CN110734036A (en) * 2019-10-28 2020-01-31 南京大学 On-chip spectrometer integrated on nanowire and preparation method of detector array thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102623891A (en) * 2012-01-17 2012-08-01 东南大学 Method for preparing micro-laser array
CN104143586A (en) * 2014-07-10 2014-11-12 北京理工大学 Method for manufacturing photoelectric detector based on integrated chip with alloy semiconductor nano-structure
US20180045953A1 (en) * 2016-04-29 2018-02-15 The Board Of Trustees Of The Leland Stanford Junior University Device components formed of geometric structures
CN107104357A (en) * 2017-06-30 2017-08-29 黄山博蓝特半导体科技有限公司 A kind of preparation method of nano-sized lasers array
CN110734036A (en) * 2019-10-28 2020-01-31 南京大学 On-chip spectrometer integrated on nanowire and preparation method of detector array thereof

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113871515A (en) * 2021-09-28 2021-12-31 湖南大学 Waveguide integrated light emitting diode
CN113871515B (en) * 2021-09-28 2024-09-10 湖南大学 Waveguide integrated light-emitting diode

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