CN105489611A - Printed type light emitting display and manufacturing method therefor - Google Patents

Printed type light emitting display and manufacturing method therefor Download PDF

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Publication number
CN105489611A
CN105489611A CN201510838249.4A CN201510838249A CN105489611A CN 105489611 A CN105489611 A CN 105489611A CN 201510838249 A CN201510838249 A CN 201510838249A CN 105489611 A CN105489611 A CN 105489611A
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CN
China
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layer
printed
manufacture
active display
tft
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CN201510838249.4A
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Chinese (zh)
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陈亚文
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Tcl集团股份有限公司
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Publication of CN105489611A publication Critical patent/CN105489611A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1292Multistep manufacturing methods using liquid deposition, e.g. printing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/326Active matrix displays special geometry or disposition of pixel-elements
    • H01L27/3262Active matrix displays special geometry or disposition of pixel-elements of TFT
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2227/00Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
    • H01L2227/32Devices including an organic light emitting device [OLED], e.g. OLED display
    • H01L2227/323Multistep processes for AMOLED

Abstract

The invention discloses a printed type light emitting display and a manufacturing method therefor. According to the manufacturing method, a hydrophobic material is adopted to manufacture a flat layer; meanwhile, a pixel electrode is embedded into the flat layer, so that the manufacturing for a pixel bank is not required, the manufacturing process for the light emitting display is simplified, and the manufacturing cost is lowered; and in addition, when a light emitting element is manufactured by adopting a printing process, the problem of ink pollution between adjacent pixels can be effectively avoided by the hydrophobic flat layer so as to effectively improve the yield and the display effect of the printed type display.

Description

A kind of printed form active display and preparation method thereof

Technical field

The present invention relates to Display Technique field, particularly relate to a kind of printed form active display and preparation method thereof.

Background technology

In the present age of information-intensive society, as the importance of the display device of visual information transmission medium in further reinforcement, in order at following dominate, display device just towards gentlier, the trend development of thinner, more low energy consumption, more low cost and better picture quality.

Organic electroluminescent LED (OLED) its there is self-luminous, reaction is fast, visual angle is wide, brightness is high, the advantage such as frivolous, the advantages such as its photochromic purity of light emitting diode with quantum dots (QLED) is high, luminous quantum efficiency is high, glow color is easily adjusted, long service life, these two kinds of luminescent devices are two Main way of current display device research.The preparation technology of OLED mainly contains vacuum evaporation and solution processing, preparation technology's then mainly solution processing of QLED.Wherein the vacuum evaporation of OLED is comparatively ripe in the application aspect of small size device, be in volume production at present, but production cost still remains high.The solution processing of OLED and QLED mainly contains the techniques such as inkjet printing, nozzle application, spin coating, silk screen printing, typography wherein, especially inkjet technology is because stock utilization is high, it is in large size to realize and be easy to realize colorize, is considered to the important way that large scale OLED and QLED display device realize low cost volume production.

In active display prepared by current typography, pixel electrode periphery needs to make one deck pixel bank, the pixel electrode perimeter region when making light-emitting component is prevented to be short-circuited because of the projection of pixel electrode, simultaneously in order to prevent ink from overflowing, cause the mutual colour contamination of neighbor, reduce display display effect.In addition owing to also needing to carry out hydrophobic treatment to pixel bank, each of which increases the complexity of manufacture craft, cost of manufacture is remained high.

Therefore, prior art has yet to be improved and developed.

Summary of the invention

In view of above-mentioned the deficiencies in the prior art, the object of the present invention is to provide a kind of printed form active display and preparation method thereof, be intended to solve existing its complex manufacturing technology of printed form active display, problem that cost is high.

Technical scheme of the present invention is as follows:

A manufacture method for printed form active display, wherein, comprises step:

A, on the tft substrate covering one deck passivation layer, then deposit one deck flatness layer over the passivation layer, then on flatness layer, deposit one deck photoresist layer, and described flatness layer adopts hydrophobic material to make;

B, exposed photoresist layer by mask, wherein half exposure is carried out in the region of pixel electrode to be produced, and TFT-S/D electrode upper end treats that borehole region exposes entirely;

C, develop to exposure area, wherein the photoresist layer of full exposure area is all removed, half exposure area residual fraction photoresist layer, and unexposed area photoresist layer thickness is unchanged;

D, employing dry carving technology carry out etching borehole, expose TFT-S/D electrode, and the part photoresist layer that wherein half exposure area is residual is removed, and the flatness layer of this half exposure area is etched away, and forms the groove corresponding with pixel electrode;

E, in described TFT substrate pixel deposition electrode;

Photoresist layer residual in F, stripping TFT substrate;

G, make light-emitting component on the tft substrate, then encapsulate.

The manufacture method of described printed form active display, wherein, the degree of depth of described groove is 50 ~ 200nm.

The manufacture method of described printed form active display, wherein, the thickness of described pixel electrode is 50 ~ 200nm.

The manufacture method of described printed form active display, wherein, described light-emitting component is OLED or QLED.

The manufacture method of described printed form active display, wherein, described OLED or QLED comprises following functions layer: hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and top electrodes.

The manufacture method of described printed form active display, wherein, has at least a functional layer to adopt typography preparation in described OLED or QLED.

The manufacture method of described printed form active display, wherein, described TFT substrate is glass or flexible base, board.

The manufacture method of described printed form active display, wherein, the tft array in described TFT substrate is non-crystalline silicon tft, low temperature polycrystalline silicon TFT, high temperature polysilicon TFT or metal oxide TFT.

The manufacture method of described printed form active display, wherein, described pixel electrode is transparent conductive metal oxide or transparent conductive metal.

A kind of printed form active display, wherein, adopts manufacture method as above to make.

Beneficial effect: the present invention makes flatness layer by using hydrophobic material, embeds in flatness layer simultaneously, eliminates the making of pixel bank, simplify the manufacture craft of active display, reduce cost of manufacture by pixel electrode.When adopting typography to make light-emitting component in addition, hydrophobic flatness layer effectively can avoid the inkiness problem between neighbor, thus effectively improves yields and the display effect of printed form display.

Accompanying drawing explanation

Fig. 1 is the flow chart of the manufacture method preferred embodiment of a kind of printed form active display of the present invention.

Fig. 2 to Fig. 6 is the structural representation of manufacture method under different conditions of a kind of printed form active display of the present invention.

Embodiment

The invention provides a kind of printed form active display and preparation method thereof, for making object of the present invention, technical scheme and effect clearly, clearly, the present invention is described in more detail below.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.

Refer to Fig. 1, Fig. 1 is the flow chart of the manufacture method preferred embodiment of a kind of printed form active display of the present invention, and as shown in the figure, it comprises step:

S1, on the tft substrate covering one deck passivation layer, then deposit one deck flatness layer over the passivation layer, then on flatness layer, deposit one deck photoresist layer, and described flatness layer adopts hydrophobic material to make;

S2, exposed photoresist layer by mask, wherein half exposure is carried out in the region of pixel electrode to be produced, and TFT-S/D electrode upper end treats that borehole region exposes entirely;

S3, develop to exposure area, wherein the photoresist layer of full exposure area is all removed, half exposure area residual fraction photoresist layer, and unexposed area photoresist layer thickness is unchanged;

S4, employing dry carving technology carry out etching borehole, expose TFT-S/D electrode, and the part photoresist layer that wherein half exposure area is residual is removed, and the flatness layer of this half exposure area is etched away, and forms the groove corresponding with pixel electrode;

S5, in described TFT substrate pixel deposition electrode;

Photoresist layer residual in S6, stripping TFT substrate;

S7, make light-emitting component on the tft substrate, then encapsulate.

Flatness layer is made by adopting hydrophobic material, then half exposure technology is adopted, at TFT-S/D electrode upper end borehole, on the flatness layer needing pixel deposition electrode zone (i.e. the region of pixel electrode), etch a groove simultaneously, then Direct precipitation pixel electrode, then peeled off pixel electrode pattern by photoresistance, form the pixel electrode embedding flatness layer, because now pixel electrode relatively flat layer surface does not form projection, therefore can not cause the short circuit problem of light-emitting component, thus the making of pixel bank can be saved.Simultaneously, because flatness layer adopts hydrophobic material to make, when adopting typography to prepare light-emitting component, deposit of ink on the pixel electrode after, larger contact angle can be formed and connected pixel electrode can not be spread into, thus effectively prevent the mutual colour contamination between neighbor, improve yields and the display effect of printed form display.

Specifically, in described step S1, as shown in Figure 2, make tft array 110 on the substrate 100 and obtain TFT substrate, this substrate 100 can be glass substrate or flexible base, board; Tft array 110 can be non-crystalline silicon tft, low temperature polycrystalline silicon TFT, high temperature polysilicon TFT or metal oxide TFT.Then on tft array 110, one deck passivation layer 200 is covered, then on passivation layer 200, one deck flatness layer 300 is deposited, on flatness layer 300, deposit one deck photoresist layer 400 again, described flatness layer 300 adopts hydrophobic material to make, and its material is but is not limited to polystyrene (PS).

In described step S2, utilize mask 120 pairs of photoresist layers to expose, wherein TFT-S/D electrode upper end treats that borehole region exposes entirely, needs the region making pixel electrode to carry out half exposure, full exposure area and half exposure area form total exposure area 410, as shown in Figure 2.

In described step S3, develop to exposure area 410, wherein the photoresist layer 400 of full exposure area (borehole region) is removed completely, the photoresist layer 400 of half exposure area (pixel electrode area) residual layer, the thickness of the photoresist layer 400 of unexposed area is unchanged, as shown in Figure 3.

In described step S4; dry carving technology is adopted to carry out etching borehole; expose the S/D electrode of TFT; the photoresist layer 400 that wherein region of pixel electrode is thinner is removed in etching process; the flatness layer 300 in this region is partially etched because of the protection losing photoresist layer 400; form a groove 130 corresponding with pixel electrode, as shown in Figure 4, the degree of depth of its further groove 130 is preferably 50-200nm.

In described step S5, Direct precipitation pixel electrode 500 in the TFT substrate completing above-mentioned steps, as shown in Figure 5, wherein, pixel electrode 500 can be transparent conductive metal oxide or conducting metal, its thickness is 50-200nm, consistent with the degree of depth of above-mentioned groove 130 or be slightly less than the degree of depth of groove 130.

In described step S6, then peel off photoresist layer 400 residual on substrate, the pixel electrode 500 on photoresist layer 400 is stripped simultaneously, thus by pixel electrode pattern, forms the pixel electrode embedding hydrophobic flatness layer 300, as shown in Figure 6.

In described step S7, the substrate completing above-mentioned steps makes light-emitting component, finally device is encapsulated.Wherein, light-emitting component can be OLED or QLED, OLED or QLED comprises following functions layer: hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and top electrodes, wherein has at least one deck to adopt typography preparation in each functional layer.

Based on said method, the present invention also provides a kind of printed form active display, and it adopts manufacture method as above to make.

Should be understood that, application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can be improved according to the above description or convert, and all these improve and convert the protection range that all should belong to claims of the present invention.

Claims (10)

1. a manufacture method for printed form active display, is characterized in that, comprises step:
A, on the tft substrate covering one deck passivation layer, then deposit one deck flatness layer over the passivation layer, then on flatness layer, deposit one deck photoresist layer, and described flatness layer adopts hydrophobic material to make;
B, exposed photoresist layer by mask, wherein half exposure is carried out in the region of pixel electrode to be produced, and TFT-S/D electrode upper end treats that borehole region exposes entirely;
C, develop to exposure area, wherein the photoresist layer of full exposure area is all removed, half exposure area residual fraction photoresist layer, and unexposed area photoresist layer thickness is unchanged;
D, employing dry carving technology carry out etching borehole, expose TFT-S/D electrode, and the part photoresist layer that wherein half exposure area is residual is removed, and the flatness layer of this half exposure area is etched away, and forms the groove corresponding with pixel electrode;
E, in described TFT substrate pixel deposition electrode;
Photoresist layer residual in F, stripping TFT substrate;
G, make light-emitting component on the tft substrate, then encapsulate.
2. the manufacture method of printed form active display according to claim 1, is characterized in that, the degree of depth of described groove is 50 ~ 200nm.
3. the manufacture method of printed form active display according to claim 1, is characterized in that, the thickness of described pixel electrode is 50 ~ 200nm.
4. the manufacture method of printed form active display according to claim 1, is characterized in that, described light-emitting component is OLED or QLED.
5. the manufacture method of printed form active display according to claim 4, is characterized in that, described OLED or QLED comprises following functions layer: hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and top electrodes.
6. the manufacture method of printed form active display according to claim 5, is characterized in that, has at least a functional layer to adopt typography preparation in described OLED or QLED.
7. the manufacture method of printed form active display according to claim 1, is characterized in that, described TFT substrate is glass or flexible base, board.
8. the manufacture method of printed form active display according to claim 1, is characterized in that, the tft array in described TFT substrate is non-crystalline silicon tft, low temperature polycrystalline silicon TFT, high temperature polysilicon TFT or metal oxide TFT.
9. the manufacture method of printed form active display according to claim 1, is characterized in that, described pixel electrode is transparent conductive metal oxide or transparent conductive metal.
10. a printed form active display, is characterized in that, adopts the manufacture method as described in any one of claim 1 ~ 9 to make.
CN201510838249.4A 2015-11-26 2015-11-26 Printed type light emitting display and manufacturing method therefor CN105489611A (en)

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Cited By (5)

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CN106129001A (en) * 2016-08-09 2016-11-16 上海交通大学 A kind of array backboard circuit and preparation method thereof
CN107507931A (en) * 2017-08-23 2017-12-22 京东方科技集团股份有限公司 Method for packing, encapsulating structure and the display device of oled display substrate
CN107658327A (en) * 2017-03-27 2018-02-02 广东聚华印刷显示技术有限公司 Dot structure, display panel and display device
CN107946199A (en) * 2017-11-16 2018-04-20 深圳市华星光电半导体显示技术有限公司 A kind of method of the stability of improvement IGZO thin film transistor (TFT)s
CN108565358A (en) * 2018-01-19 2018-09-21 昆山国显光电有限公司 A kind of method and display screen of anode etching

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CN103151305A (en) * 2013-02-28 2013-06-12 京东方科技集团股份有限公司 Thin film transistor array substrate, preparing method and display device
CN103700685A (en) * 2013-12-12 2014-04-02 京东方科技集团股份有限公司 Display panel and display device
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CN1689377A (en) * 2002-10-07 2005-10-26 皇家飞利浦电子股份有限公司 Method for manufacturing a light emitting display
CN102279464A (en) * 2011-07-27 2011-12-14 陈明晖 Electro-wetting display device based on photoluminescence effect
CN103107133A (en) * 2013-01-04 2013-05-15 京东方科技集团股份有限公司 Array substrate, manufacturing method thereof and displaying device
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106129001A (en) * 2016-08-09 2016-11-16 上海交通大学 A kind of array backboard circuit and preparation method thereof
CN106129001B (en) * 2016-08-09 2018-11-20 上海交通大学 A kind of array backboard circuit and preparation method thereof
CN107658327A (en) * 2017-03-27 2018-02-02 广东聚华印刷显示技术有限公司 Dot structure, display panel and display device
CN107507931A (en) * 2017-08-23 2017-12-22 京东方科技集团股份有限公司 Method for packing, encapsulating structure and the display device of oled display substrate
CN107946199A (en) * 2017-11-16 2018-04-20 深圳市华星光电半导体显示技术有限公司 A kind of method of the stability of improvement IGZO thin film transistor (TFT)s
WO2019095419A1 (en) * 2017-11-16 2019-05-23 深圳市华星光电半导体显示技术有限公司 Method for improving stability of igzo thin film transistor
CN108565358A (en) * 2018-01-19 2018-09-21 昆山国显光电有限公司 A kind of method and display screen of anode etching
CN108565358B (en) * 2018-01-19 2020-05-19 昆山国显光电有限公司 Anode etching method and display screen

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