CN100496175C - A silicon-based organic luminescence micro-display metal anode and cathode insulation pole preparation method - Google Patents
A silicon-based organic luminescence micro-display metal anode and cathode insulation pole preparation method Download PDFInfo
- Publication number
- CN100496175C CN100496175C CNB2005101238889A CN200510123888A CN100496175C CN 100496175 C CN100496175 C CN 100496175C CN B2005101238889 A CNB2005101238889 A CN B2005101238889A CN 200510123888 A CN200510123888 A CN 200510123888A CN 100496175 C CN100496175 C CN 100496175C
- Authority
- CN
- China
- Prior art keywords
- metal anode
- silicon
- silicon chip
- based organic
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010703 silicon Substances 0.000 title claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims description 20
- 238000004020 luminiscence type Methods 0.000 title claims description 9
- 238000009413 insulation Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 239000011651 chromium Substances 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 12
- GHZFPSVXDWJLSD-UHFFFAOYSA-N chromium silver Chemical compound [Cr].[Ag] GHZFPSVXDWJLSD-UHFFFAOYSA-N 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
This invention relates to silicon base organic light microscope metal anode and cathode isolation column process method, which comprises the following steps: 1, etching out metal anode pattern on silicon base surface; b, evaporating chromium or silver film by use of electron beam on silicon base; c, supersonic peeling off; d, reverting etched cathode to isolate columned to fulfill process.
Description
Technical field
The invention belongs to the microelectronic component preparing technical field, the preparation method of particularly a kind of silicon-based organic light-emitting little demonstration (OLED) metal anode and cathode insulated column.
Background technology
OLED (Organic Light Emitting Display, organic light emitting display) is meant organic semiconducting materials and luminescent material under electric field driven, injects and compoundly causes luminous phenomenon by charge carrier.OLED has active illuminating, no visual angle problem; In light weight, thickness is little; High brightness, high-luminous-efficiency; Luminescent material is abundant, easily realizes colored the demonstration; Response speed is fast, dynamic menu quality height; The serviceability temperature scope is wide; Can realize soft the demonstration; Technology is simple, and cost is low; A series of advantages such as shock resistance is strong, so it is had a wide range of applications in various fields by the desirable display that the expert is called future.
Chinese patent 200410005063.2 reports form a kind of method with the organic light emitting apparatus that improves performance, and this method is also for relating to the preparation of metal anode and cathode insulated column.Chinese patent 02823793.5 has been reported a kind of preparation method of OLED, and this method has the shortcoming of complex process.
Summary of the invention
The preparation method who the purpose of this invention is to provide the little demonstration of a kind of silicon-based organic light-emitting (OLED) metal anode and cathode insulated column.
For achieving the above object, technical solution of the present invention is: the preparation method of the little demonstration of a kind of silicon-based organic light-emitting (OLED) metal anode and cathode insulated column comprises the following steps:
The first step: select for use common silicon chip to do substrate, on substrate, be coated with the optics photoresist, expose, develop with the front page reticle;
Second step: the silicon chip after will developing is removed the remaining primer after developing on the silicon chip in reactive ion etching machine, and the oxygen flow that feeds reactive ion etching machine in this process is 55～65 milliliters of per seconds;
The 3rd step: silicon chip is sent into evaporator, above photoresist, adopt electron beam evaporation process evaporation chromium silver alloy film, make the metal anode electrode pattern;
The 4th step: the silicon chip that evaporated the chromium silver alloy film is placed the vessel that are contained with acetone, and photoresist on the ultrasonic wave removal silicon chip and the chromium silver alloy film on the photoresist, obtain the metal anode figure;
The 5th step: resist coating above the metal anode figure;
The 6th step: carry out the exposure first time, 5～8 seconds time for exposure with the second edition reticle;
The 7th step: the silicon chip after will exposing places 110～130 ℃ of hot plate bakings 2.5～3 minutes;
The 8th step: the silicon chip after will toasting carried out exposing the second time 25～30 seconds again, developed then, and the back of developing forms the cross section and is down trapezoidal insulated column structure, and so far, the preparation of silicon-based organic luminescence micro-display metal anode and cathode insulated column is finished.
The preparation method of the little demonstration of described silicon-based organic light-emitting (OLED) metal anode and cathode insulated column, described substrate is common silicon chip, thickness is 480～520 μ m.
The preparation method of the little demonstration of described silicon-based organic light-emitting (OLED) metal anode and cathode insulated column, the optics etching glue model described in the first step is S9912, thickness is 1000～1500nm.
The preparation method of described a kind of silicon-based organic light-emitting little demonstration (OLED) metal anode and cathode insulated column, it is characterized in that, in described the 3rd step, deposited by electron beam evaporation technology evaporation chromium silver alloy film, be to evaporate chromium thickness 8～10nm earlier, evaporate silver-colored thickness 30～50nm then.
The preparation method of the little demonstration of described silicon-based organic light-emitting (OLED) metal anode and cathode insulated column, the photoresist model described in the 5th step is 5214, thickness is 1200～1400nm.
Description of drawings
Fig. 1 to Fig. 4 is the technological operation schematic flow sheet of the inventive method.
Embodiment
Now be described with reference to the accompanying drawings technical scheme of the present invention.According to the preparation method of above-described a kind of silicon-based organic light-emitting little demonstration (OLED) metal anode and cathode insulated column, its operating procedure is:
The first step makes bottom electrode figure 102 by lithography on silicon chip 101 surfaces.
As shown in Figure 1, select for use common silicon chip to do substrate 101, the thickness of substrate is 500 μ m, is coated with the S9912 optics etching glue on substrate, and thickness 1000-1500nm obtains bottom electrode figure 102 through behind the exposure imaging;
Second step evaporation chromium silver alloy film 103.
As shown in Figure 2, silicon chip after at first will developing adopts oxygen to remove primer in reactive ion etching (RIE), 60 milliliters of per seconds of flow, plasma bias power is 10 watts, slice, thin piece is sent into evaporator immediately after removing primer, adopt electron beam evaporation process evaporation chromium thickness 10nm earlier, evaporate silver-colored thickness 40nm then;
Ultrasonic peeling off of the 3rd step.
As shown in Figure 3, the substrate that evaporated the chromium silver alloy film is placed the acetone vessel, and photoresist 102 on the ultrasonic wave removal silicon chip 101 and the chromium silver alloy film 103 on the glue, anode electrode figure 104 obtained;
The 4th step photoetching cathode insulated column figure 105.
As shown in Figure 4, adopt the counter-rotating of 5214 photoresists to make cathode insulated column figure 105 by lithography on the surface of chromium silver alloy film figure 104, finish the preparation of the little demonstration of silicon-based organic light-emitting (OLED) metal anode and cathode insulated column.
Claims (5)
1, the preparation method of a kind of silicon-based organic luminescence micro-display metal anode and cathode insulated column is characterized in that, comprising:
The first step: select for use common silicon chip to do substrate, on substrate, be coated with the optics photoresist, expose, develop with the front page reticle;
Second step: the silicon chip after will developing is removed the remaining primer after developing on the silicon chip in reactive ion etching machine, and the oxygen flow that feeds reactive ion etching machine in this process is 55～65 milliliters of per seconds;
The 3rd step: silicon chip is sent into evaporator, above photoresist, adopt electron beam evaporation process evaporation chromium silver alloy film, make the metal anode electrode pattern;
The 4th step: the silicon chip that evaporated the chromium silver alloy film is placed the vessel that are contained with acetone, and photoresist on the ultrasonic wave removal silicon chip and the chromium silver alloy film on the photoresist, obtain the metal anode figure;
The 5th step: resist coating above the metal anode figure;
The 6th step: carry out the exposure first time, 5～8 seconds time for exposure with the second edition reticle;
The 7th step: the silicon chip after will exposing places 110～130 ℃ of hot plate bakings 2.5～3 minutes;
The 8th step: the silicon chip after will toasting carried out exposing the second time 25～30 seconds again, developed then, and the back of developing forms the cross section and is down trapezoidal insulated column structure, and so far, the preparation of silicon-based organic luminescence micro-display metal anode and cathode insulated column is finished.
2. the preparation method of silicon-based organic luminescence micro-display metal anode according to claim 1 and cathode insulated column is characterized in that, described substrate is common silicon chip, and thickness is 480～520 μ m.
3. the preparation method of silicon-based organic luminescence micro-display metal anode according to claim 1 and cathode insulated column is characterized in that, the optics etching glue model described in the first step is S9912, and thickness is 1000～1500nm.
4. the preparation method of silicon-based organic luminescence micro-display metal anode according to claim 1 and cathode insulated column, it is characterized in that, in described the 3rd step, deposited by electron beam evaporation technology evaporation chromium silver alloy film, be to evaporate chromium thickness 8～10nm earlier, evaporate silver-colored thickness 30～50nm then.
5. the preparation method of silicon-based organic luminescence micro-display metal anode according to claim 1 and cathode insulated column is characterized in that, the photoresist model described in the 5th step is 5214, and thickness is 1200～1400nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101238889A CN100496175C (en) | 2005-11-24 | 2005-11-24 | A silicon-based organic luminescence micro-display metal anode and cathode insulation pole preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101238889A CN100496175C (en) | 2005-11-24 | 2005-11-24 | A silicon-based organic luminescence micro-display metal anode and cathode insulation pole preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1972545A CN1972545A (en) | 2007-05-30 |
| CN100496175C true CN100496175C (en) | 2009-06-03 |
Family
ID=38113065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101238889A Active CN100496175C (en) | 2005-11-24 | 2005-11-24 | A silicon-based organic luminescence micro-display metal anode and cathode insulation pole preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100496175C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539056A (en) * | 2018-05-15 | 2018-09-14 | 北京蜃景光电科技有限公司 | Anode construction manufacturing method, silicon substrate OLED anode constructions and display screen |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1329458A (en) * | 2001-04-27 | 2002-01-02 | 清华大学 | Preparation method of organic electroluminescent device |
| CN1397986A (en) * | 2001-07-23 | 2003-02-19 | 北京大学 | Method for stripping metal |
-
2005
- 2005-11-24 CN CNB2005101238889A patent/CN100496175C/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1329458A (en) * | 2001-04-27 | 2002-01-02 | 清华大学 | Preparation method of organic electroluminescent device |
| CN1397986A (en) * | 2001-07-23 | 2003-02-19 | 北京大学 | Method for stripping metal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1972545A (en) | 2007-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106057864B (en) | A kind of flexible display panels and preparation method thereof | |
| CN103794630B (en) | For the manufacture of the method for display of organic electroluminescence | |
| EP1221710A2 (en) | Method of manufacturing triode carbon nanotube field emitter array | |
| CN108428794A (en) | Utilize the lossless transfer of photoresist supporting layer and method and the application of patterned Graphene | |
| US20220352430A1 (en) | Micro light emitting diode array and manufacturing method thereof | |
| CN112420798A (en) | Preparation method of silicon-based OLED panel | |
| CN1627469A (en) | Field emission device, display adopting the same and method of manufacturing the same | |
| CN100496175C (en) | A silicon-based organic luminescence micro-display metal anode and cathode insulation pole preparation method | |
| CN101697369B (en) | Method for preparing isolation column of silicon-based organic light-emitting micro-display device | |
| US9991476B2 (en) | Method for manufacturing flexible OLED display component | |
| CN101813884B (en) | Method for preparing nano-structured matrix on surface of uneven substrate | |
| CN110534550A (en) | Display panel and preparation method thereof and terminal | |
| CN107195801B (en) | A kind of OLED minitype displayer and its anode linkage method | |
| JP2001126869A (en) | Method of manufacturing organic electroluminescence apparatus | |
| CN105576498A (en) | Manufacturing method for narrow ridge GaAs-based laser device and narrow ridge GaAs-based laser device | |
| WO2024031976A1 (en) | Ultra-high resolution micro-led display device and metal film bonding method therefor | |
| CN112349869A (en) | Method for preparing OLED anode by nanoimprint lithography | |
| CN104835708B (en) | Preparation method of graphene oxide field emission flat plate display instrument | |
| JP2002047560A (en) | Mask for vacuum deposition, method for depositing thin film pattern and method for manufacturing el element using the mask | |
| CN114334582B (en) | Manufacturing method of field emission device structure and field emission device structure | |
| JPH09283280A (en) | Manufacture of organic electroluminescent element | |
| CN103855265B (en) | Luminescent device preparation method and luminescent device | |
| CN109950112A (en) | A kind of preparation method of the ion feedback preventing film of gleam image intensifier | |
| CN108690949B (en) | Mask plate, preparation method thereof and evaporation method | |
| CN110760792A (en) | Silicon-based alignment method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220223 Address after: Room 108, floor 1, building 4, No. 2 dacuodeng Hutong, Dongcheng District, Beijing 100010 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |