CN109950112A - A kind of preparation method of the ion feedback preventing film of gleam image intensifier - Google Patents
A kind of preparation method of the ion feedback preventing film of gleam image intensifier Download PDFInfo
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Abstract
A kind of preparation method of the ion feedback preventing film of gleam image intensifier, the following steps are included: a prepares microchannel plate, b with graphene film that monoatomic layer monocrystalline is prepared in the mutually independent substrate of microchannel plate, c removes substrate, d cleans graphene film, e will be on the end face of graphene film transfer road microchannel plate, transfer monoatomic layer graphene film every time, form ion feedback preventing film, f drying, g lamination: according to the thickness requirements of ion feedback preventing film, passes through repetitive displacement step, realize the accurate control of ion feedback preventing film thickness, the precision of control is in monoatomic layer thickness；The present invention does not need organic film auxiliary, avoids the pollution of the preparation and removal process of organic film to microchannel plate；Every time on transfer monoatomic layer graphene film to the end face of microchannel plate, and it can repeatedly shift and be overlapped, the thickness of ion feedback preventing film can be controlled accurately；The preparation of ion feedback preventing film and the preparation of microchannel plate are independent from each other, and will not influence each other；The transmission performance of the electronics of ion feedback preventing film and matched well, while good process repeatability obtained to the barrier property of other ions, homogeneity of product is high.
Description
Technical field
The invention belongs to photoelectric device technical field more particularly to a kind of systems of the ion feedback preventing film of gleam image intensifier
Preparation Method.
Background technique
Gleam image intensifier is the core devices of low-light level night vision device, plays decisive work to the image quality of whole system
With.Gleam image intensifier is vacuum device, mainly by partially forming as follows: photocathode, ion feedback preventing film, microchannel plate and glimmering
Optical screen.As shown in Figure 1, microchannel plate is a kind of large area array, the photomultiplier tube array of high electron multiplication, high spatial resolution,
For sheet type honeycomb structure.There is microwell array, aperture in the micron-scale, can be to the electronics of two-dimensional spatial distribution on microchannel plate
Density doubles.Since there are residual gas, the electronics in micro-channel tubes is after doubling, in microchannel in gleam image intensifier
Pipe output end forms high density electron cloud, and cation therein accelerates to move to time extreme direction under electric field action, and may
It is collided with conduit wall, residual gas in ionization channels；Cation can also be collided with photocathode repeatedly in channel simultaneously, to light
Electric Ka band damages and generates additional photoemission, forms interference signal, reduces signal-to-noise ratio, it is existing that here it is ion feedbacks
As.Ion feedback phenomenon eventually forms ion burn on fluorescent screen, influences picture quality.
Ion feedback preventing film is to prevent one of positive ion feedback most efficient method in gleam image intensifier, it can be effective
Photocathode is protected on ground, extends the service life of photocathode.Aluminum oxide, silica are that commonly to prepare anti-ion anti-
Present the material of film.Since microchannel plate end face has array hole (Fig. 1), using aluminum oxide, silica directly micro- logical
When road plate end face is film-made, the film at aperture can be collapsed relative to microchannel plate end face, so can not be directly in microchannel plate
Continuous whole film is prepared on end face.When preparing ion feedback preventing film using aluminum oxide, silica at present, usually first
One layer of support membrane is prepared, then makes ion feedback preventing film on support membrane again, such as the middle promulgated by the State Council of Publication No. CN1202536A
The preparation method of the ion feedback preventing film of bright patent application publication first coats one layer organic on the input end face of microchannel plate
Film is supportted, aluminum oxide or silica membrane are then made on support membrane using ion sputtering masking technique, finally roasted
Organic support membrane is decomposed, to form ion feedback preventing film on microchannel plate.The middle promulgated by the State Council of Publication No. CN108281344A
A kind of microchannel plate using graphene film as ion feedback preventing film is disclosed in bright patent application, in the input of microchannel plate
Adhere to organic support membrane on electrode, copper film is then coated on Supported film, then removes organic support membrane, deposited on copper film
Graphene film finally dissolves copper film and obtains the microchannel plate using graphene film as ion feedback preventing film.
The method that both the above prepares ion feedback preventing film is intended to first prepare organic support membrane, then on organic support membrane
Ion feedback preventing film is prepared, is had the following problems:
One, during high temperature removes organic support membrane, organic matter decomposes the problem of microchannel being brought to pollute, and influences
The service life of microchannel plate, and technological operation difficulty is increased the step of removing other support membranes on microchannel plate.
Two, since preparation process is the process that microchannel plate, organic film, ion feedback preventing film are sequentially prepared, film failure
When will lead to microchannel plate and can not reuse, reduce yield rate, also improve production cost.
Three, traditional method for doing ion feedback preventing film with graphene film can only prepare one layer of monoatomic layer graphene film and make
For ion feedback preventing film.
Summary of the invention
In order to overcome the above-mentioned problems of the prior art, the purpose of the present invention is to provide one kind will not pollute microchannel
Gleam image intensifier ion feedback preventing film preparation method.
To achieve the goals above, the present invention takes following technical solution:
A kind of preparation method of the ion feedback preventing film of gleam image intensifier, comprising the following steps:
A. microchannel plate is prepared.
B. prepare graphene film: with prepare one layer of monoatomic layer monocrystalline every time in the mutually independent substrate of microchannel plate
Graphene film.
C. it removes substrate: substrate used in graphene film will be prepared and pass through erosion removal.
D. it cleans graphene film: graphene film being put into deionized water and is cleaned.
E. it shifts graphene film: graphene film is transferred on the end face of microchannel plate, shift one layer of monoatomic layer every time
The graphene film of monocrystalline forms ion feedback preventing film；
F. it dries: the microchannel plate that transfer is adsorbed with graphene film being subjected to low-temperature bake, removes moisture removal；
G. it lamination: according to the thickness requirements of ion feedback preventing film, shifts one or many, forms one or more layers graphene
The ion feedback preventing film of composition realizes the accurate control of ion feedback preventing film thickness, and the precision of control is in monoatomic layer thickness.
More specifically, step b prepares graphene film, c removes copper-based bottom, d cleaning graphene film and step a prepare microchannel
Plate is mutually indepedent, and step b, c, d do not depend on step a, and avoiding conventional method ion feedback preventing film associated process steps must be
The limitation being sequentially prepared on microchannel plate.
More specifically, the preparation of ion feedback preventing film does not need organic film auxiliary, avoids the preparation and removal of organic film,
Pollution of the organic matter to microchannel plate is prevented.
More specifically, graphene film is transferred on microchannel plate end face to specific step is as follows: microchannel plate is submerged
Enter in deionized water, keeps the upper surface of microchannel plate parallel with the liquid level of deionized water；Graphene film is moved into deionized water
Liquid level, mobile microchannel plate to graphene film underface；Microchannel plate is pulled up, slowly close to graphene film, makes graphene
Film is attached to the upper surface of microchannel plate.
More specifically, it is only connect with deionization water and air during graphene film is transferred on the end face of microchannel plate
Touching, avoids and contacts with solution, do not generate the pollution to device.
More specifically, the process employs the preparations of the graphene film of monoatomic layer monocrystalline and transfer, it can be achieved that anti-ion is anti-
The accurate control for presenting film thickness, the transmission performance of the electronics of ion feedback preventing film and obtains well the barrier property of other ions
Matching, while good process repeatability, homogeneity of product are high.
More specifically, the monoatomic layer single crystal graphene film that area is greater than microchannel plate face area is prepared, it is sufficient to cover
Microchannel plate end face.
Preferably, the substrate is copper-based bottom.
Preferably, described in step b with prepare monoatomic layer monocrystalline every time in the mutually independent substrate of microchannel plate
The method of graphene film is chemical vapour deposition technique, method particularly includes:
A, substrate is then passed into H in hydrogen annealing2And CH4Mixed gas initialize the growth of graphene；
B, it after continuous graphene layer is formed on the substrate, is cooled to room temperature.
Preferably, the process for the substrate of graphene film being passed through into erosion removal described in step c are as follows: graphene film soaks upward
Enter in etching liquid, erodes substrate；
Preferably, the temperature of low-temperature bake described in step f is 60 DEG C -150 DEG C.
From the above technical scheme, the present invention prepares microchannel plate, ion feedback preventing film is prepared using graphene, in base
After forming graphene film on bottom, substrate is removed, is in deionized water cleaned up graphene film, by the graphite after cleaning
Alkene film is transferred directly on microchannel plate end face, since graphene intensity is enough, without preparing organic film, is transferred to microchannel plate
On graphene film will not collapse.Because without preparing organic film, and the step of depositing graphene film and removal substrate is not
It is to be carried out on microchannel plate, has prevented the problem of bring microchannel is polluted in technical process.And it is anti-to prepare anti-ion
The process for presenting film and the process for preparing microchannel plate are independent from each other, can carry out simultaneously, will not influence each other, improve life
Produce efficiency.Even if ion feedback preventing film preparation failure, will not lead to scrapping for microchannel plate, improve yields.It can basis
Ion feedback preventing film film thickness needs, and multiple lamination single layer graphene film, makes ion feedback preventing film on the end face of microchannel plate
Thickness controllable precise, the precision of control is in single layer of carbon atom thickness, so that the transmission performance of ion feedback preventing film electronics and to it
The barrier property of its ion obtains matched well.The excellent properties of graphene film itself can sufficiently ensure ion feedback preventing film
Uniformity, consistency, thickness can be prepared in 20nm or less, the ion feedback preventing film of function admirable.
Detailed description of the invention
Fig. 1 is the schematic diagram of microchannel plate.
Fig. 2 is the schematic diagram using ion feedback preventing film made from the method for the present invention.
Specific embodiment
A specific embodiment of the invention is described in more detail below in conjunction with attached drawing
In order to above and other objects of the present invention, feature and advantage can be become apparent from, the embodiment of the present invention is cited below particularly,
It is described below in detail.
Graphene is to be currently known intensity and a kind of highest crystalline material of hardness, breaking strength (intensity pole in material
Limit) it is 42N/m2, tensile strength and elasticity modulus are respectively 130Gpa and 1.0TPa, and excellent in mechanical performance has enough strong
Degree can be born the gross weight of itself by any point on the film of graphene preparation, not will cause and collapse.Meanwhile graphene
Also there is very high Young's modulus, thermal conductivity and conductivity, it can be to cationic effectively barrier.
The present invention proposes a kind of preparation method of new ion feedback preventing film, according to the characteristic of grapheme material with stone
First monoatomic layer monocrystalline is formed on the substrate using chemical vapour deposition technique in the material for preparing of the black alkene as ion feedback preventing film
Then graphene film removes substrate and obtains graphene film, the graphene film prepared cleaned, finally directly by graphene
Ion feedback preventing film is formed in film transfer to the end face of microchannel plate.The preparation process of graphene film of the present invention and removal substrate
Process carries out not on microchannel plate, so as to avoid the pollution to microchannel plate.Furthermore, it is possible to according to anti-ion feedback
The single layer single crystal graphene film prepared is carried out multiple-layer stacked by the thickness requirement of film, realizes that ion feedback preventing film thickness is adjustable,
To which the electronic transmission performance to ion feedback preventing film and the barrier property to other ions carry out matching optimization.This is because stone
Black alkene is very high to the transmitance of electronics, and the appropriate number of plies that increases will not influence electron penetration rate, but can significantly improve to other
The barrier property of ion.
Below by specific embodiment and comparative example, the present invention is further illustrated.It is arrived used in following the description
Reagent, material and instrument such as not special explanation, are conventional reagent, conventional material and conventional instrument, commercially available
It obtains, related reagent can also be synthesized by conventional synthesis process and be obtained.
Steps are as follows for the preparation method of the ion feedback preventing film of gleam image intensifier of the invention:
1, microchannel plate is prepared；
As shown in Fig. 2, preparing microchannel pore 3 on silicon wafer using etching technics (reactive ion etching), first exist before etching
The lower end surface of silicon wafer 1 prepares masking layer, carries out spin coating using the desk-top sol evenning machine of KW-4A type, drips photoresist for three to four
(AZ5214E type photoresist) drops to the center of 1 lower end surface of silicon wafer, revolving speed is arranged then as low speed 500/15 (rpm/s), high speed
4500/50 (rpm/s), makes photoresist even application on the lower end surface of silicon wafer 1, and the thickness of photoresist is in 300nm or more.Using
MIRAKTMT The molyne type hot plate, front baking 60s at a temperature of 100 DEG C.Photoresist is exposed on Q4000 type litho machine
10s carries out 115 DEG C of reversion bakings to the silicon wafer 1 after exposure, the photoresist of exposure area is made to crosslink reaction insoluble in development
Liquid；Silicon wafer 1 after reversion baking is removed into mask under litho machine and carries out pan-exposure, the photoresist of unexposed area occurs
Photosensitized reaction allows to be dissolved in developer solution, and the time of pan-exposure is 11s.Using II type developer solution of KMP PD238- to silicon wafer 1
Carry out development 55s.The silicon wafer to have developed is placed on hot plate, setting hot plate temperature is 120 DEG C, post bake 20min, takes out nature
Cooling.Using JPG560BV type magnetron sputtering coater, selects diameter for 100mm, with a thickness of 7mm, purity is 99.999%
Aluminium target, the argon gas that setting working gas is 99.99%, vacuum are 5.0 × 10-3Silicon wafer 1 is placed in substrate frame by Pa, is taken out
Vacuum, vacuum degree reach 10-3When Pa, the background pressure of vacuum chamber is made to reach 5.0 × 10-3Argon gas is passed through when Pa.Stablize to aura
Afterwards, start to deposit aluminium film in silicon wafer lower end surface, after depositing 20min, close argon gas, be cooled to room temperature to vacuum chamber, take out silicon
Piece 1 simultaneously immerses acetone soln, using stripping technology to metallic layer graphic, obtain channel diameter be 10 μm, pitch of holes is 5 μm,
Aluminium film with a thickness of 200nm masking layer.Gas used is SH when using reactive ion etching method etching silicon wafer4, SF6Etc. can be with
The gas to react with silicon selects SF using the ICP180 etching machine of Oxford Instrument and Equipment Company, Britain6It is subject to a small amount of O2
Mixed gas etch silicon, setting underlayer temperature is -110 DEG C, when reaction chamber pressure is 12mTorr, ICP power 500W,
When oxygen gas flow rate 5sccm, silicon color sensor is carried out, microchannel pore array is obtained after the completion of etching.
2, single layer single crystal graphene film preparation；One layer of graphene is deposited on copper-based bottom using chemical vapor deposition process
Film, gas source are methane and hydrogen, and auxiliary gas is argon gas, under uniform gaseous environment, the heat chemistry gas directly on copper-based bottom
Phase deposition growing graphene, detailed process are as follows:
A, the hydrogen annealing by copper foil at 1000 DEG C then passes to H2And CH4Mixed gas initialize graphene
Growth；
B, it after forming continuous graphene layer on copper foil, is cooled to room temperature；Due to copper to the solubility very little of carbon (<
0.001%, atomic fraction), in copper as almost without segregation mechanisms, forming the process of graphene when catalysis close to table
Surface catalysis process: predecessor is adsorbed on copper-based bottom；Growth carbon atom is decomposed on copper surfaces；Carbon atom is in copper surface aggregation shape
At graphene nucleating point；Carbon atom is diffused into around graphene nucleating point, and bonding forms graphene under the action of high-temperature catalytic
Layer.After copper surface forms one layer of graphene, copper surface is no longer exposed among reaction gas, that is, loses catalytic action.
3, copper-based bottom removal；One layer of medium transfer first is coated in graphene membrane surface, such as polymethyl methacrylate, poly- two
Methylsiloxane, Hot melt adhesive tape etc.；The copper-based bottom graphene film of medium transfer will be coated with copper-based bottom under, graphene film is upper
Posture immerse etching liquid in, such as FeCl3Solution, Fe (NO3)3The acid solutions such as solution are coated with after eroding copper-based bottom
The graphene film of medium transfer；Medium transfer removal is obtained into graphene film again.Medium transfer is poly-methyl methacrylate
Ester Shi Keyong organic solution (acetone) removal or high temperature thermal decomposition removal, medium transfer can be direct when being dimethyl silicone polymer
It takes off, when medium transfer is Hot melt adhesive tape, is then removed according to the type of hot melt adhesive using corresponding method.
4, graphene film cleans；Graphene film is transferred in deionized water and is cleaned.
5, graphene film shifts；The graphene film that cleaning finishes is transferred to the microchannel plate end face of polishing, it is primary to shift
One layer of graphene film；The microchannel plate of the present embodiment is monocrystalline silicon microchannel plate, after the cleaning of monocrystalline silicon microchannel plate, drying,
It immerses in deionized water, the upper surface of microchannel plate is parallel with liquid level；Graphene film is put into deionized water, graphene film without
Swim in lamination, corrugationless deionized water surface, to after just, microchannel plate is pulled up up and down for microchannel plate and graphene film
It rises, slowly close to graphene film, graphene film is adsorbed by Van der Waals force, is transferred on the end face of microchannel plate.
6, it dries；The microchannel plate for being adsorbed with graphene film is subjected to (60 DEG C -150 DEG C) of low temperature bakings, moisture is removed, makes
Graphene film is stronger to be attached on microchannel plate end face, the ion feedback preventing film 2 for obtaining being attached to 1 end face of microchannel plate
(Fig. 2).
7, step 2-6 can be repeated according to the needs of ion feedback preventing film film thickness, the graphene film prepared is carried out multiple
Transfer, is superimposed upon on microchannel plate, until the film thickness of ion feedback preventing film reaches requirement.
The preparation method of the ion feedback preventing film of gleam image intensifier of the present invention is not limited to grapheme material, with graphene film
Class grapheme material with similar two-dimensional layer crystal structure characteristic can all be operated with this preparation method.
The present invention prepares the ion feedback preventing film of gleam image intensifier using graphene, microchannel plate is prepared, in substrate
After forming graphene film, substrate is removed, cleans up in deionized water, the graphene film after cleaning is transferred directly to
On microchannel plate end face, since graphene intensity is enough, without preparing organic film, the graphene film being transferred on microchannel plate
It will not collapse.Because without preparing organic film, and the step of depositing graphene film and removal substrate is not on microchannel plate
It carries out, has prevented the problem of bring microchannel is polluted in technical process.And prepare the process and system of ion feedback preventing film
The process of standby microchannel plate is independent from each other, can carry out simultaneously, will not influence each other, improves production efficiency.Simultaneously i.e.
Make ion feedback preventing film preparation failure, scrapping for microchannel plate will not be caused, improve yields.It can be according to anti-ion feedback
Film film thickness needs, and multiple lamination single layer graphene film, makes the thickness of ion feedback preventing film accurately may be used on the end face of microchannel plate
Control, the precision of control is in single layer of carbon atom thickness, so that the transmission performance of ion feedback preventing film electronics and the resistance to other ions
Separating performance obtains matching optimization.The excellent properties of graphene film itself, can sufficiently ensure ion feedback preventing film uniformity, one
Cause property, can prepare thickness in 20nm or less, the ion feedback preventing film of function admirable.
The method of the present invention first prepares graphene film, then the graphene film prepared is transferred on microchannel plate end face,
Without additionally preparing organic film, pollution is generated to vias inner walls during avoiding removal organic film, is conducive to extend micro- logical
The service life of guidance tape；It is mutual for preparing graphene film, removing the process of substrate and cleaning and prepare the process of microchannel plate
It is independent, it can carry out, will not influence each other simultaneously, device performance is easier to ensure, reduces process complexity, increasing can
Control property, improves yields；This method can multiple lamination single layer graphene film as needed, make the thickness of ion feedback preventing film can
With accuracy controlling, control accuracy is in single-layer graphene thickness degree.It is anti-that the anti-ion of nanoscale can be prepared using grapheme material
Film is presented, improves the performance of ion feedback preventing film, simple process, consistency and reproducible.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, defined in the present invention
General Principle can realize in other embodiments without departing from the spirit or scope of the present invention.Therefore, this hair
It is bright be not intended to be limited to shown in embodiment, and be to fit to the most wide model consistent with disclosed principle and features of novelty
It encloses.
Claims (10)
1. a kind of preparation method of the ion feedback preventing film of gleam image intensifier, it is characterised in that: the following steps are included:
A. microchannel plate is prepared；
B. prepare graphene film: with the graphite for preparing one layer of monoatomic layer monocrystalline in the mutually independent substrate of microchannel plate every time
Alkene film；
C. it removes substrate: substrate used in graphene film will be prepared and pass through erosion removal；
D. it cleans graphene film: graphene film being put into deionized water and is cleaned；
E. it shifts graphene film: graphene film is transferred on the end face of microchannel plate, shift one layer of monoatomic layer monocrystalline every time
Graphene film；
F. it dries: the microchannel plate that transfer is adsorbed with graphene film being subjected to low-temperature bake, removes moisture removal；
G. it lamination: according to the thickness requirements of ion feedback preventing film, shifts one or many, forms one or more layers graphene composition
Ion feedback preventing film, realize ion feedback preventing film thickness accurate control, the precision of control is in monoatomic layer thickness.
2. the preparation method of the ion feedback preventing film of gleam image intensifier as described in claim 1, it is characterised in that: step b
Prepare graphene film, that c removes copper-based bottom, d cleaning graphene film and step a prepare microchannel plate is mutually indepedent, step b, c, d be not
Step a is relied on, the limit that conventional method ion feedback preventing film associated process steps must successively carry out on microchannel plate is avoided
System.
3. the preparation method of the ion feedback preventing film of gleam image intensifier as described in claim 1, it is characterised in that: anti-ion
The preparation of feedback film does not need organic film auxiliary, avoids the preparation and removal process of organic film, has prevented organic matter to micro- logical
The pollution of guidance tape.
4. the preparation method of the ion feedback preventing film of gleam image intensifier as described in claim 1, it is characterised in that: by graphite
Specific step is as follows in alkene film transfer to microchannel plate end face: microchannel plate being submerged into deionized water, microchannel plate is made
Upper surface it is parallel with the liquid level of deionized water；Graphene film is moved to the liquid level of deionized water, mobile microchannel plate to graphite
Immediately below alkene film；Microchannel plate is pulled up, slowly close to graphene film, graphene film is made to be attached to the upper end of microchannel plate
Face.
5. the preparation method of the ion feedback preventing film of gleam image intensifier as claimed in claim 4, it is characterised in that: graphene
It is only contacted with deionization water and air during in film transfer to the end face of microchannel plate, avoids and contacted with solution, do not produced
The raw pollution to device.
6. the preparation method of the ion feedback preventing film of gleam image intensifier as described in claim 1, it is characterised in that: this method
Using the graphene film preparation and transfer of monoatomic layer monocrystalline, the accurate control of ion feedback preventing film thickness, anti-ion are realized
It feeds back the transmission performance of the electronics of film and matched well, while good process repeatability is obtained to the barrier property of other ions, produce
Product consistency is high.
7. the preparation method of the ion feedback preventing film of gleam image intensifier as described in claim 1, it is characterised in that: preparation face
Product is greater than the monoatomic layer single crystal graphene film of microchannel plate face area, it is sufficient to cover microchannel plate end face.
8. the preparation method of the ion feedback preventing film of gleam image intensifier as described in claim 1, it is characterised in that: the base
Bottom is copper-based bottom.
9. the preparation method of the ion feedback preventing film of gleam image intensifier as described in claim 1, it is characterised in that: step b
Described is being chemistry with the method for the graphene film for preparing monoatomic layer monocrystalline in the mutually independent substrate of microchannel plate every time
Vapour deposition process, method particularly includes:
A, substrate is then passed into H in hydrogen annealing2And CH4Mixed gas initialize the growth of graphene；
B, it after continuous graphene layer is formed on the substrate, is cooled to room temperature.
10. the preparation method of the ion feedback preventing film of gleam image intensifier as described in claim 1, it is characterised in that: step c
The process that the substrate by graphene film passes through erosion removal are as follows: graphene film immerses in etching liquid upward, erodes base
Bottom；The temperature of low-temperature bake described in step f is 60 DEG C -150 DEG C.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116985395A (en) * | 2023-09-26 | 2023-11-03 | 四川辰宇微视科技有限公司 | High-precision and high-efficiency film laminating device and method for packaging micro-channel plate |
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| EP2164092A1 (en) * | 2008-09-15 | 2010-03-17 | Photonis Netherlands B.V. | An ion barrier membrane for use in a vacuum tube using electron multiplying, an electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure |
| CN103241733A (en) * | 2013-05-16 | 2013-08-14 | 华北电力大学 | Pollution and drape-free transfer method suitable for large-area graphene |
| CN104465295A (en) * | 2014-10-27 | 2015-03-25 | 中国电子科技集团公司第五十五研究所 | Novel micro-channel plate electrode with ion blocking function and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2164092A1 (en) * | 2008-09-15 | 2010-03-17 | Photonis Netherlands B.V. | An ion barrier membrane for use in a vacuum tube using electron multiplying, an electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure |
| CN103241733A (en) * | 2013-05-16 | 2013-08-14 | 华北电力大学 | Pollution and drape-free transfer method suitable for large-area graphene |
| CN104465295A (en) * | 2014-10-27 | 2015-03-25 | 中国电子科技集团公司第五十五研究所 | Novel micro-channel plate electrode with ion blocking function and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116985395A (en) * | 2023-09-26 | 2023-11-03 | 四川辰宇微视科技有限公司 | High-precision and high-efficiency film laminating device and method for packaging micro-channel plate |
| CN116985395B (en) * | 2023-09-26 | 2023-11-28 | 四川辰宇微视科技有限公司 | High-precision and high-efficiency film laminating device and method for packaging micro-channel plate |
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