CN110010431A - A kind of preparation method of the microchannel plate with ion feedback preventing film - Google Patents
A kind of preparation method of the microchannel plate with ion feedback preventing film Download PDFInfo
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- CN110010431A CN110010431A CN201910275811.5A CN201910275811A CN110010431A CN 110010431 A CN110010431 A CN 110010431A CN 201910275811 A CN201910275811 A CN 201910275811A CN 110010431 A CN110010431 A CN 110010431A
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- microchannel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
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Abstract
A kind of preparation method of the microchannel plate with ion feedback preventing film, comprising the following steps: microchannel plate matrix is pre-processed；Ion feedback preventing film is prepared with atomic layer deposition method in the upper surface of microchannel plate matrix；Microchannel pore is prepared from the lower end surface of microchannel plate matrix using etching technics；Insulating layer, conductive layer and secondary electron emission layer are sequentially prepared on the inner wall of microchannel pore；Removal etches masking layer used, obtains the microchannel plate with ion feedback preventing film；Present invention deposition on the upper surface of microchannel plate matrix prepares ion feedback preventing film, microchannel pore is etched in lower end surface, ion feedback preventing film is prepared before microchannel pore etching runs through, prepared ion feedback preventing film thickness is accurately controlled in atomic layer scale, it can be achieved that ion feedback preventing film is to the transmission performance of electronics and the matched well of the barrier property to cation；The method of the present invention can be contaminated to avoid microchannel plate, and the ion feedback preventing film quality of its end face is high, and integrated artistic is simple, high yield rate.
Description
Technical field
The invention belongs to photoelectric device technical field more particularly to a kind of systems of the microchannel plate with ion feedback preventing film
Preparation Method.
Background technique
Gleam image intensifier is the core devices of low-light level night vision device, plays decisive work to the image quality of whole system
With.Gleam image intensifier is vacuum device, mainly by partially forming as follows: photocathode, ion feedback preventing film, microchannel plate and glimmering
Optical screen.As shown in Figure 1, microchannel plate is a kind of large area array, the photomultiplier tube array of high electron multiplication, high spatial resolution,
For sheet type class honeycomb structure.There is microwell array on microchannel plate, be filled with electrode, it can be to the electronics of two-dimensional spatial distribution
Density doubles.Since there are residual gas, the electronics in micro-channel tubes is after doubling, in microchannel in gleam image intensifier
Pipe output end forms high density electron cloud, and cation therein accelerates to move to time extreme direction under electric field action, and may
It is collided with conduit wall, residual gas in ionization channels；Cation can also be collided with photocathode repeatedly in channel simultaneously, to light
Electric Ka band damages and generates additional photoemission, forms interference signal, reduces signal-to-noise ratio, it is existing that here it is ion feedbacks
As.Ion feedback phenomenon eventually forms ion burn on fluorescent screen, improves the noise factor as pipe, influences picture quality.And
And ion feedback can also make photocathode be damaged, and shorten the service life of photocathode.
To reduce or even eliminating ion feedback, a kind of effective ways are that ion feedback preventing film is arranged in microchannel plate end face,
It can be effectively protected photocathode, extend the service life of photocathode.Aluminum oxide, silica are commonly to make
The material of standby ion feedback preventing film.It is not complete plane, if adopted since microchannel plate end face has array aperture (Fig. 1)
It is directly film-made in microchannel plate end face with aluminum oxide, silica, the film at aperture can be sent out relative to microchannel plate end face
Life collapses, so continuous whole film can not be prepared directly on microchannel plate end face.
When preparing ion feedback preventing film with aluminum oxide, silica at present, usually first on the end face of microchannel plate
One layer of support membrane is prepared, then makes ion feedback preventing film on support membrane using support membrane as carrier again.Such as Publication No.
A kind of method preparing ion feedback preventing film on microchannel plate disclosed in the Chinese invention patent application of CN1202536A first exists
One layer of organic film is coated on the input end face of microchannel plate, and three oxygen are then made using ion sputtering masking technique over an organic film
Change two aluminium or silica membrane, last Roasting Decomposition organic film, to form ion feedback preventing film on microchannel plate.It is this
Organic film is first prepared, the method for then preparing ion feedback preventing film over an organic film has during high temperature removes organic film
The problem of decomposition of machine object can bring microchannel to pollute, will affect the service life of microchannel plate.And it is formed using sputtering technology anti-
Ion feedback film thickness is thicker, can reduce the signal-to-noise ratio and resolution ratio of gleam image intensifier.
In order to avoid polluting microchannel plate, the Chinese invention patent of Patent No. 200410010839.X discloses another kind
The method that ion feedback preventing film is prepared on microchannel plate prepares organic film carrier of controlling oneself, then true in deionized water first
In Magnetron Sputtered Al Film on organic film carrier of controlling oneself in empty room, the self-holding film carrier ring for the duplicature for being loaded with organic film and aluminium film is obtained,
Then the attaching of aluminium film and microchannel plate input face is completed in gas glow discharge, the oxonium ion that glow discharge generates makes aluminium film
It aoxidizes and organic film carrier is made to decompose removing, since aluminium film and microchannel plate input face closely attach, decomposing organic film carrier process
The molecule of middle volatilization is blocked by aluminium film, so as to reduce the pollution that microchannel plate is subject to a certain extent, but still is made
With traditional membrane deposition method such as magnetron sputtering, evaporation, ion feedback preventing film is in uneven thickness, it is difficult to accurate control, it is difficult to
The nanoscale film for depositing the defects of pin-free, damaged cannot prepare tens nanometers of ion feedback preventing films below of thickness.
In summary, traditional microchannel plate with ion feedback preventing film is first to prepare the microchannel with array hole
After plate, then on microchannel plate end face support membrane is prepared, ion feedback preventing film is then prepared on support membrane；Or preparation auxiliary
Ion feedback preventing film after preparing ion feedback preventing film on Auxiliary support film, is transferred to produced microchannel pore by support membrane
Microchannel plate end face on.These two kinds of methods can bring microchannel plate to pollute, and ion feedback preventing film is of poor quality, complex process,
The problems such as operation difficulty is big, and yield rate is low.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation methods of microchannel plate with ion feedback preventing film, by microchannel
The preparation of plate and the preparation of ion feedback preventing film that its end face is arranged in are merged, and directly obtain end by a set of processing step
Face has the microchannel plate of ion feedback preventing film；This method can be contaminated to avoid microchannel plate, and its end face prevent from
Son feedback film quality is high, and integrated artistic step is simple.
To achieve the goals above, the present invention takes following technical solution:
A kind of preparation method of the microchannel plate with ion feedback preventing film, comprising the following steps:
Microchannel plate matrix is pre-processed；
Ion feedback preventing film is directly prepared with atomic layer deposition method on an end face of microchannel plate matrix, is not needed organic
Film auxiliary does not need film transfer；
Prepare microchannel pore on microchannel plate matrix: in the other end of microchannel plate matrix, preparation etches masking layer simultaneously
Graphically, microchannel pore is then prepared using etching technics；
Insulating layer, conductive layer and secondary electron emission layer are sequentially prepared on microchannel pore inner wall；
Masking layer is removed, the microchannel plate with ion feedback preventing film is obtained.
Further, when etching microchannel pore on microchannel plate matrix, microchannel pore will pass through microchannel plate matrix
Preceding pause etching；After microchannel pore inner wall forms insulating layer, conductive layer and secondary electron emission layer, it is micro- logical to continue etching perforation
Road hole makes ion feedback preventing film be covered on the aperture of microchannel pore.
Further, pause etching refers to and ought be etched to microchannel pore before microchannel pore will pass through microchannel plate matrix
Distance from bottom microchannel plate matrix pause etching when being provided with 2 μm~8 μm of the end face of ion feedback preventing film, make microchannel pore not
Through microchannel plate matrix.
Further, ion feedback preventing film can be prepared through preceding in microchannel pore etching, according to this adjustable preparation step
Suddenly.
Further, the preparation and removal for avoiding organic film do not need film transfer, have prevented the dirt to microchannel plate
Dye.
From the above technical scheme, the present invention using atomic layer deposition method prepared on microchannel plate matrix prevent from
Son feedback film, compared with sputtering method prepares ion feedback preventing film, the thickness for the film that the method for atomic layer deposition is prepared is smaller,
Carrier can be reduced in the scattering at interface, reduce carrier mobility；It is directly made on the end face of microchannel plate matrix simultaneously
Standby ion feedback preventing film, can not only provide a supporting role for film, eliminate support membrane preparation step or anti-ion feedback
The transfer step of film, simplifies preparation process, has prevented the pollution generated in organic film removal process, has been conducive to extend microchannel
The service life of plate, the microchannel plate simple process of the method for the present invention preparation, and it is pollution-free to microchannel plate.This method preparation
The ion feedback preventing film thickness of microchannel plate end face accurately controls, and the precision of control is in atomic thickness, and ion feedback preventing film
Fine and close pin-free, thickness is uniform, is remarkably improved the comprehensive performance of ion feedback preventing film.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of conventional microchannel plate.
Fig. 2 is the schematic diagram of microchannel plate of embodiment of the present invention matrix.
Fig. 3 is that the schematic diagram after ion feedback preventing film is deposited on microchannel plate matrix.
Fig. 4 is that the schematic diagram after microchannel pore (being not penetrated) is made on microchannel plate matrix.
Fig. 5 is the schematic diagram after microchannel pore inner wall forms insulating layer, conductive layer and secondary electron emission layer.
Fig. 6 is microchannel pore structure enlargement diagram.
Fig. 7 is the schematic diagram of the microchannel plate with ion feedback preventing film to complete.
Specific embodiment
A specific embodiment of the invention is described in more detail below in conjunction with attached drawing.
In order to above and other objects of the present invention, feature and advantage can be become apparent from, the embodiment of the present invention is cited below particularly,
It is described below in detail.
Traditional microchannel plate with ion feedback preventing film is after first preparing the microchannel plate with array hole, then
Support membrane is prepared on microchannel plate end face, and ion feedback preventing film is then prepared on support membrane；Or preparation Auxiliary support film,
After preparing ion feedback preventing film on Auxiliary support film, ion feedback preventing film is transferred to the microchannel plate of produced microchannel pore
End face on.Support membrane is first prepared on microchannel plate end face, then the method for preparing ion feedback preventing film is easy to bring external dirt
Dye, and the requirement by the way of shifting ion feedback preventing film to operation precision is high, ion feedback preventing film is thicker, and yields is low,
All there is improved space in existing method.
The basic ideas of the method for the present invention are: preparing anti-ion in an end face atomic layer deposition method of microchannel plate matrix
Feed back film, prepare microchannel pore in the other end of microchannel plate matrix, microchannel pore inner wall prepare insulating layer, conductive layer and
Secondary electron emission layer, finally removing and etching masking layer used is the preparation for completing to have the microchannel plate of ion feedback preventing film.
The present invention is supported without using organic film, is not needed during silicon microchannel plate upper surface directly prepares ion feedback preventing film
The transfer of film has prevented the pollution generated in organic film removal process, is conducive to extend the service life of microchannel plate；And without turning
It is shifted elsewhere for garrison duty ion barrier film, technology difficulty is low, and it is easily operated, be conducive to improve yields.
It is core of the invention thought above, following will be combined with the drawings in the embodiments of the present invention, to the embodiment of the present invention
Technical solution be clearly and completely described, it is clear that described embodiments are only a part of the embodiments of the present invention, and
The embodiment being not all of.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work
Under the premise of the every other embodiment that obtains, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
It is different from other way described herein using other and implements, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
With a specific embodiment, the invention will be further described below, using monocrystalline silicon as microchannel plate in the present embodiment
Matrix prepares material using aluminum oxide as ion feedback preventing film；The step of the method for the present invention, is as follows:
Step 1: being pre-processed to microchannel plate matrix.As shown in Fig. 2, taking the silicon with a thickness of 100 μm of twin polishing
Silicon wafer 1 is immersed in H by piece 12SO4:H2O2In the solution of=3:1,10min is boiled at a high temperature of 800 DEG C, removes 1 surface of silicon wafer
Various particles and organic pollutant；Taking-up is rinsed 5 minutes with deionized water, then silicon wafer 1 is immersed in HF:H2O=1:10's
In solution, 15min is placed under room temperature, the metallic pollution and oxide on 1 surface of silicon wafer are removed with this；Deionized water is used in taking-up again
It rinses 5 minutes, silicon wafer 1 is then immersed in HCl:H2O2: H2In the mixed liquor of O=1:1:6,10min is placed at 75 DEG C, with
The metal ion pollution on this removal 1 surface of silicon wafer；It takes out and is rinsed 5 minutes with deionized water again, put after being dried up silicon wafer 1 with nitrogen
It sets on hot plate, silicon wafer 1 is dried, remove the moisture of 1 adsorption of silicon wafer, pretreatment is completed.
Step 2: depositing ion feedback preventing film on the upper surface of microchannel plate matrix.With aluminum oxide for anti-ion
The material for feeding back film, forms aluminum oxide film on the upper surface of silicon wafer 1 using atomic layer deposition method, as shown in Figure 3.This
Embodiment prepares di-aluminium trioxide film 2 using Picosun SUNALETM R-150B ALD equipment on the upper surface of silicon wafer 1.
Pretreated silicon wafer 1 is put into ALD reaction chamber, using trimethyl aluminium (TMA) and high purity water as precursor source, with nitrogen
(99.999%) it is used as carrier gas and purgative gas, 300 DEG C of temperature, deposition rate about 0.1nm/cycle, recycles 10 period depositions three
Al 2 O film, the when a length of 1s of each cycle period.The process that atomic layer deposition method forms film is broadly divided into 2 reaction ranks
Section: (1) TMA pulse under nitrogen carrier enters in reaction chamber, is chemisorbed on the upper surface of silicon wafer 1, then uses nitrogen as clearly
Gas washing blows away remaining TMA；(2)H2Pulse enters reaction chamber and anti-with the TMA that is adsorbed on 1 surface of silicon wafer to O under nitrogen atmosphere
It answers, generates aluminum oxide and by-product CH4, remaining water and by-product blow out reaction chamber by nitrogen, thus in 1 table of silicon wafer
Face deposits the di-aluminium trioxide film 2 of one layer of 1nm.Use atomic layer deposition method prepare di-aluminium trioxide film thickness range for
0.55~100nm, relatively thin di-aluminium trioxide film keep higher transmitance to electronics as ion feedback preventing film, can improve
The detection efficient of microchannel plate reduces dead zone voltage, has excellent performance.
Step 3: preparing microchannel pore on microchannel plate matrix.It is prepared on silicon wafer using reactive ion etching process
Microchannel pore 3.Masking layer first is prepared in the lower end surface of silicon wafer 1 before etching, spin coating is carried out using the desk-top sol evenning machine of KW-4A type, it will
Three to four drops photoresist (AZ5214E type photoresist) drop to the center of 1 lower end surface of silicon wafer, and it is low speed 500/15 that revolving speed, which is then arranged,
(rpm/s), 4500/50 (rpm/s) of high speed, makes photoresist even application on the lower end surface of silicon wafer 1, the thickness of photoresist exists
300nm or more；Using MIRAKTMT The molyne type hot plate, front baking 60s at a temperature of 100 DEG C；In Q4000 type litho machine
On 10s is exposed to photoresist, 115 DEG C of reversions are carried out to the silicon wafer 1 after exposure and are toasted, the photoresist of exposure area is crosslinked
Reaction does not dissolve in developer solution；Silicon wafer 1 after reversion baking is removed into mask under litho machine and carries out pan-exposure, makes unexposed area
The photoresist in domain occurs photosensitized reaction and allows to be dissolved in developer solution, and the time of pan-exposure is 11s；Using II type of KMP PD238-
Developer solution carries out development 55s to silicon wafer 1；The silicon wafer to have developed is placed on hot plate, setting hot plate temperature is 120 DEG C, post bake
20min takes out Temperature fall.Using JPG560BV type magnetron sputtering coater, select diameter for 100mm, with a thickness of 7mm, pure
The aluminium target that degree is 99.999%, the argon gas that setting working gas is 99.99%, vacuum are 5.0 × 10-3Pa places silicon wafer 1
It in substrate frame, vacuumizes, vacuum degree reaches 10-3When Pa, the background pressure of vacuum chamber is made to reach 5.0 × 10-3Argon is passed through when Pa
Gas starts to deposit aluminium film in 1 lower end surface of silicon wafer after aura is stablized, and after depositing 20min, closes argon gas.It is cooling to vacuum chamber
To room temperature, take out silicon wafer 1 and simultaneously immerse acetone soln, using stripping technology to metallic layer graphic, obtain channel diameter be 10 μm,
Pitch of holes be 5 μm, aluminium film with a thickness of 200nm masking layer.Gas used is SH when etching silicon wafer 14, SF6Etc. can be sent out with silicon
The gas of raw reaction selects SF using the ICP180 etching machine of Oxford Instrument and Equipment Company, Britain6It is subject to a small amount of O2Mixing
Gas etches silicon, and setting underlayer temperature is -110 DEG C, when reaction chamber pressure is 12mTorr, ICP power 500W, oxygen stream
When fast 5sccm, silicon color sensor is carried out, obtains that aperture is 10 μm, pitch of holes is 5 μm, etching depth is 95 μm after the completion of etching
Microchannel pore array (Fig. 4).
As a kind of preferred embodiment of the invention, when etching microchannel pore 3 on silicon wafer 1, when being etched to microchannel
There are also when a distance, such as 5 μm whens, stop etching, that is, the microchannel pore 3 etched for the upper surface of the distance from bottom silicon wafer 1 in hole 3
Not through silicon wafer 1 (microchannel plate matrix), a little silicon materials are remained between the bottom hole of microchannel pore and the upper surface of silicon wafer,
Microchannel pore is not through when subsequent depositing insulating layer in microchannel pore, conductive layer and secondary electron emission layer will not pollute silicon
The aluminum oxide film of piece upper surface.
Step 4: microchannel pore inner wall sequentially forms insulating layer, conductive layer and secondary electron emission layer.In deposition conductive layer
Thermal oxidation process is used to carry out insulation processing to silicon wafer 1 before with secondary electron emission layer, to be formed in 3 inner wall of microchannel pore
With a thickness of the SiO of 200nm2Insulating layer 4.Then the AZO film of 200nm is prepared on insulating layer 4 using ALD technique as conductive
Layer 5；The aluminum oxide film of 5nm is prepared as secondary electron emission layer using the method for atomic layer deposition on conductive layer 5
6, as shown in Figure 5, Figure 6.
Step 5: continuing to etch microchannel pore through microchannel plate matrix.During step 3 prepares microchannel pore, carve
Pause etches and carries out hole inner wall processing when erosion matrix not yet runs through, therefore after preparing conductive layer and secondary electron emission layer
There are one continue etching perforation microchannel pore.The etching technics continued in step 3 removes microchannel pore and microchannel
Silicon materials between plate matrix upper surface, are made ion feedback preventing film be covered on the aperture of microchannel pore, are made with ion feedback preventing film
For bottom hole, aluminium masking layer finally is removed with phosphoric acid to get the microchannel plate (Fig. 7) with ion feedback preventing film is arrived.
The microchannel plate with microchannel pore is first made different from conventional method, then makes organic film and does Auxiliary support, then
Ion feedback preventing film is prepared over an organic film, removes organic film finally to obtain the work of the microchannel plate with ion feedback preventing film
Skill process, deposition prepares ion feedback preventing film to the method for the present invention directly on the end face of the microchannel plates matrix such as monocrystalline silicon, micro-
The other end of channel plate matrix etches microchannel pore, and the end face of microchannel plate matrix can provide branch for top ion barrier film
Support, no longer needs to prepare other support membranes, will not bring external contamination when preparing ion feedback preventing film to microchannel pore, and
Atomic layer deposition method can prepare the ion feedback preventing film of thickness very little, so that device has preferable performance.
The method of the present invention is merged the preparation of the preparation of microchannel plate and the ion feedback preventing film that its end face is arranged in,
The microchannel plate that end face has ion feedback preventing film is directly obtained by a set of processing step.This method can be to avoid microchannel plate
It is contaminated, and the ion feedback preventing film quality of its end face is high, integrated artistic is simple, high yield rate.
Certainly, technical concept of the invention is not limited in above-described embodiment, can also design according to the present invention obtain
Many different concrete schemes, for example, previous embodiment is after first preparing ion feedback preventing film on microchannel plate matrix, then to make
Standby microchannel pore, but the microchannel pore not through microchannel plate matrix can also be first prepared, then do not having microchannel pore again
Ion feedback preventing film is prepared on the end face in aperture, finally penetrates through microchannel pore again, that is, prepares microchannel pore and to prepare anti-ion anti-
The sequence of feedback film step can exchange, when first preparing microchannel pore, the step of insulation processing and conductive layer and secondary electron emission layer
Suddenly it can be carried out before preparing ion feedback preventing film, ion feedback preventing film can also be prepared and carried out again later；Such as these
Change and equivalent transformation should be included in it is of the present invention within the scope of.
Claims (6)
1. a kind of preparation method of the microchannel plate with ion feedback preventing film, which comprises the following steps:
Microchannel plate matrix is pre-processed；
Ion feedback preventing film is directly prepared with atomic layer deposition method on the upper surface of microchannel plate matrix, it is auxiliary not need organic film
It helps, does not need film transfer；
Microchannel pore is prepared on microchannel plate matrix, prepares patterned etching masking in the lower end surface of microchannel plate matrix
Then layer prepares microchannel pore using etching technics；
Insulating layer, conductive layer and secondary electron emission layer are sequentially prepared on the inner wall of microchannel pore；
Masking layer is removed, the microchannel plate with ion feedback preventing film is obtained.
2. the preparation method of the microchannel plate with ion feedback preventing film as described in claim 1, it is characterised in that: micro- logical
Stage before road hole etching runs through can prepare ion feedback preventing film in microchannel plate, adjust preparation step according to this.
3. the preparation method of microchannel plate as described in claim 1, it is characterised in that: etched on microchannel plate matrix micro- logical
When road hole, microchannel pore suspends etching before will pass through microchannel plate matrix；Prepared in microchannel pore insulating layer, conductive layer and
After secondary electron emission layer, continues etching perforation microchannel pore, ion feedback preventing film is made to be covered on the aperture of microchannel pore.
4. the preparation method of the microchannel plate with ion feedback preventing film as claimed in claim 3, it is characterised in that: microchannel
Hole is that pause etching refers to when the distance from bottom microchannel plate matrix for being etched to microchannel pore is set before will pass through microchannel plate matrix
Stop etching when being equipped with 2 μm~8 μm of the end face of ion feedback preventing film, makes microchannel pore not through microchannel plate matrix.
5. the preparation method of the microchannel plate with ion feedback preventing film as described in claim 1, it is characterised in that: avoid
The preparation and removal of organic film do not need film transfer, have prevented the pollution to microchannel plate.
6. as described in claim 1 with the microchannel plate preparation method of ion feedback preventing film, it is characterised in that: use atom
Layer sedimentation prepares ion feedback preventing film in microchannel plate upper surface, and ion feedback preventing film thickness can be in monoatomic layer scale essence
The matched well of barrier property of the ion feedback preventing film to the transmission performance of electronics and to cation is realized in really control.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111613500A (en) * | 2020-06-03 | 2020-09-01 | 鲁东大学 | Preparation method of aluminum oxide ion feedback prevention film of microchannel plate |
| RU2758498C1 (en) * | 2021-04-18 | 2021-10-29 | Общество с ограниченной ответственностью «КАТОД» | Microchanal plate |
| CN115692140A (en) * | 2022-11-03 | 2023-02-03 | 北方夜视科技(南京)研究院有限公司 | Microchannel plate for inhibiting snowflake noise of low-light-level image intensifier and preparation method thereof |
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| CN108281344A (en) * | 2017-12-21 | 2018-07-13 | 中国建筑材料科学研究总院有限公司 | A kind of high detection efficient, low noise microchannel plate and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111613500A (en) * | 2020-06-03 | 2020-09-01 | 鲁东大学 | Preparation method of aluminum oxide ion feedback prevention film of microchannel plate |
| CN111613500B (en) * | 2020-06-03 | 2023-03-31 | 鲁东大学 | Preparation method of aluminum oxide ion feedback prevention film of microchannel plate |
| RU2758498C1 (en) * | 2021-04-18 | 2021-10-29 | Общество с ограниченной ответственностью «КАТОД» | Microchanal plate |
| CN115692140A (en) * | 2022-11-03 | 2023-02-03 | 北方夜视科技(南京)研究院有限公司 | Microchannel plate for inhibiting snowflake noise of low-light-level image intensifier and preparation method thereof |
| CN115692140B (en) * | 2022-11-03 | 2023-10-17 | 北方夜视科技(南京)研究院有限公司 | Microchannel plate for inhibiting snowflake point noise of low-light-level image intensifier and preparation method thereof |
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