CN114512379B - Nano-gap electron source structure and preparation method thereof - Google Patents
Nano-gap electron source structure and preparation method thereof Download PDFInfo
- Publication number
- CN114512379B CN114512379B CN202210099674.6A CN202210099674A CN114512379B CN 114512379 B CN114512379 B CN 114512379B CN 202210099674 A CN202210099674 A CN 202210099674A CN 114512379 B CN114512379 B CN 114512379B
- Authority
- CN
- China
- Prior art keywords
- electron
- electrode
- preparing
- extraction electrode
- nanogap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 238000000605 extraction Methods 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 56
- 230000008569 process Effects 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000010894 electron beam technology Methods 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000012546 transfer Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 25
- 229910021389 graphene Inorganic materials 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000002086 nanomaterial Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000003491 array Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 4
- 230000004044 response Effects 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000001035 drying Methods 0.000 description 12
- 230000005684 electric field Effects 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000002090 nanochannel Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/027—Construction of the gun or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
The invention discloses a nano gap electron source and a preparation method thereof. The nano gap electron source is prepared on a plane insulating substrate, and the structure comprises a base (1), a dielectric layer (2), an electron emitter (3), a grid electrode (4) for controlling electron emission, an insulating layer (5), an electron extraction electrode (6), an electron optical system (7) for controlling characteristics such as electron focusing and the like, and a collector (8). The preparation method combines a high-precision etching or electron beam exposure process, a transfer means and a thin film process. The invention combines the existing semiconductor processing technology to obtain the proposal of miniaturized and integrated electronic source device, so as to obtain the technical advantages of high frequency and quick response, has higher application potential in novel electronic components and micro-nano electromechanical systems, and lays a technical foundation for realizing on-chip integrated vacuum electronic devices in the future.
Description
Technical Field
The invention relates to a nano gap electron source and a preparation method thereof, belonging to the field of novel micro-nano electrons and vacuum nano electronic devices.
Background
The electron source is used as a core element of a vacuum device and is widely applied to various fields of communication, military, medical treatment, security inspection and the like, such as a traveling wave tube in radar detection, an X-ray tube in medical diagnosis, an electron imaging device in object morphology imaging and the like. The field emission cold cathode electron source has the characteristics of quick response, high current density, no need of preheating, high efficiency and the like, and can be integrated, so that the miniaturization of the traditional vacuum device is possible.
The size of the electron source as a core element of the vacuum device directly affects the miniaturization and integration of the vacuum device, so that it is an important one of the problems of miniaturization and integration of the electron source. The nano gap channel structure proposed in recent years also belongs to a field emission cold cathode structure, namely when in an extremely small nano electrode gap channel, even under the atmospheric condition, the mean free path of electrons is larger than the nano gap channel size, the electrons can more easily realize collision-free transport in the channel, the electron transport is similar to ballistic transport in a vacuum channel, and lower working voltage can be obtained. Along with the continuous development of micro-nano processing technology, the preparation flow of the nano channel structure is simpler and more convenient, so that the traditional electron source structure has the potential of miniaturization and integration.
The nano gap can be regarded as a vacuum channel, and the nano gap structure is used as an electron source, and the flat and compact structure characteristics of the nano gap are that the structure is different from the traditional electron source structure, and the nano gap structure has the advantages of simplifying the processing technology of a vertical structure and improving the integral integration level of a device. However, there are still many problems in this structure, in that the stability of the device is greatly affected by the emitter and the gate, and the total amount of electron emission and the effective electron utilization of the device are affected by the structural design of the device.
Disclosure of Invention
Technical problems: the invention aims to provide a nano-gap electron source structure and a preparation method thereof, which utilize a high-precision semiconductor process to prepare a highly-integrated and compact electron source structure, and electrons can be transmitted in a ballistic transport or tunneling mode under the scale, so that the technical bottleneck that the traditional electric vacuum device needs to be strictly packaged is broken through, and the requirement of the vacuum electronic device on the vacuum degree and the application range are widened.
The technical scheme is as follows: in order to overcome the problems, the invention provides a nano-gap electron source which comprises a substrate, a dielectric layer, an electron emitter, a grid electrode for controlling electron emission, an insulating layer, an electron extraction electrode, an electron optical system for controlling characteristics such as electron focusing, a collector and a nano-gap channel, wherein the device index of low loss and high current density of the nano-gap electron source is realized; the structure is as follows: the method comprises the steps of arranging a dielectric layer on the upper surface of a substrate, arranging an electron emitter and a grid electrode for controlling electron emission on the upper surface of the dielectric layer, wherein the distance between the electron emitter and the grid electrode for controlling electron emission is less than 500 nanometers, arranging an insulating layer on the upper surface of the electron emitter and the upper surface of the grid electrode for controlling electron emission, covering an electron extraction electrode with an electron extraction hole on the upper surface of the insulating layer, arranging an electron optical system for controlling the characteristics of electron focusing and the like above the electron extraction electrode with the electron extraction hole, and arranging a collector above the electron optical system for controlling the characteristics of electron focusing and the like.
Wherein:
the electron emitter is made of metal or semiconductor material with good conductivity, and the end of the electron emitter is flat, round, pointed cone and their combination shape, so that electrons can be conveniently emitted into the nano gap channel under the action of the grid.
The grid electrode for controlling the electron emission is made of metal or semiconductor materials with good conductivity, and in order to prevent the grid electrode from emitting electrons under the action of the electron extraction electrode, a high work function conductive material is adopted, or a high work function material or a dielectric layer film is manufactured on the surface of the grid electrode for controlling the electron emission so as to reduce the electron emission.
The electron extraction electrode is positioned above the plane of the nano gap channel, the nano gap channel and the electron extraction electrode are separated by an insulating layer, a round hole of the electron extraction electrode is formed by a single or array film hole shape at the position corresponding to the nano gap channel, electrons emitted by the electron emitter are deflected to the electron extraction electrode by the voltage applied to the electron extraction electrode, and are led into the electron optical system by the electrode outlet hole of the electron extraction electrode, and the round hole of the electron extraction electrode is used as an electron outlet channel.
The electron extraction electrode is made of round holes made on the metal layer as electron extraction channels or a material with a net-shaped structure of the electron channels.
The nanogap channels are spatially arranged to form arrays having large electron emission currents in different shapes for use in different applications.
The dielectric layer and the insulating layer are made of silicon oxide, zirconium oxide, aluminum oxide, hafnium oxide, silicon nitride or gallium nitride.
The electron emitter is made of metal or two-dimensional nano material with low work function, good chemical stability and excellent conductivity.
The preparation method of the nano gap electron source comprises the following steps:
step 1: preparing a dielectric layer; and preparing an oxide layer material on the polished heavily doped silicon wafer by utilizing an atomic layer deposition process.
Step 2: preparing a patterned electrode; designing the shape of the electrode by means of an exposure process; preparing a desired electrode pattern on a silicon substrate;
step 3: preparing an electrode; magnetron sputtering, electron beam evaporation or evaporation process is adopted; filling a required electrode material in the electrode pattern on the basis of the step 2;
step 4: emitter and gate preparation; a thermal chemical vapor deposition method or a transfer method is adopted; on the basis of the step 3, transferring a material with a low work function at the tip of the electron emitter, and obtaining a regular electron emitter tip and a corresponding grid structure for controlling electron emission by adopting a stripping method after the preparation is completed;
step 5: preparing an insulating layer; on the basis of the step 4, depositing an oxide insulating layer on the surfaces of the electron emitter and the grid electrode for controlling the electron emission by utilizing an atomic layer deposition and magnetron sputtering process;
step 6: preparing an extraction electrode; combining an overlay process and a film process, reserving a hole right above a nano gap channel, and sequentially preparing an insulating layer and an electron extraction electrode;
step 7: preparing an electron extraction polar mesh; on the basis of the step 5, a mode of transferring a graphene film is adopted, and the graphene film is covered on the surface of a round hole reserved in an electron extraction electrode to form graphene meshes;
step 8: assembling a matched electron optical system and an electron extraction electrode; and (3) assembling the structure prepared in the steps 1 to 7, an electron optical system for controlling the electron focusing characteristic and a collector by using a finishing die.
Another method for preparing the nanogap electron source according to the invention comprises the steps of:
the preparation process from top to bottom is adopted:
step 1: preparing a dielectric layer, namely preparing the dielectric layer on the polished heavily doped silicon wafer by utilizing a plasma enhanced chemical vapor deposition method or an atomic layer deposition process;
step 2: preparing an electron emitter and a grid electrode, sequentially preparing the electron emitter and the grid electrode on the surface of the insulating layer, and etching a required nano gap channel by means of electron beam direct writing or focused ion beam exposure technology;
step 3: preparing an insulating layer, namely preparing an oxide insulating layer by utilizing atomic layer deposition;
step 4: preparing an electron extraction electrode, reserving a hole right above a nano gap channel by combining an overlay process and a thin film process, and sequentially preparing an insulating layer and the electron extraction electrode;
step 5: preparing an electron extraction electrode mesh, namely covering a graphene film on the surface of a round hole reserved in an electron extraction electrode by adopting a mode of transferring the graphene film on the basis of the step 5 to form a graphene mesh;
step 6: and (3) assembling a matched electron optical system and a collector, and assembling the electron lens with the structure prepared in the steps 1 to 5 by using a finishing die.
The beneficial effects are that: compared with the prior art, the technical scheme provided by the invention has the following technical effects:
1) In the structural design of the nano-gap electron source, the electron emitter and the grid are in a flattened structural design, so that the surface electric field intensity of the emitter and the grid area can be effectively enhanced, the electron emission efficiency is improved, and the starting voltage is reduced; on the other hand, a metal material with a higher work function is selected for the gate material, so that electrons of the gate are difficult to emit, and the current density is increased;
2) The invention utilizes the multi-emitter combined form, not only improves the beam current of electron emission electron beams, but also has the convergence effect of the electron beams due to the emitter and grid structure, and is beneficial to the modulation of electron by an electron optical system, thereby improving the brightness index of the electron beams;
3) The invention prepares a highly integrated and compact electron source structure by utilizing a high-precision semiconductor process, electrons can be transmitted in a ballistic transport or tunneling mode under the scale, the technical bottleneck that the traditional electric vacuum device needs to be strictly packaged is broken through, and the requirement and application range of the vacuum electronic device on the vacuum degree are widened.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a nanogap channel according to the invention.
Fig. 2 is a top view of a single nanogap channel emitter according to the invention.
Fig. 3 is a top view of a plurality of nanogap channel ring emitters according to the invention.
FIG. 4 is a schematic diagram of a process for preparing an electron source with gold nanogap channels according to the invention.
FIG. 5 is a schematic diagram of a process flow for preparing a carbon-based nanogap channel electron source according to the invention.
FIG. 6 is a schematic diagram of a process flow for preparing an electron source with a gate-type nanogap channel according to the invention.
The drawings are as follows: a substrate 1, a dielectric layer 2, an electron emitter 3, a gate electrode 4, an insulating layer 5, an electron extraction electrode 6, an electron optical system 7, a collector 8 and a nanogap channel 9.
Detailed Description
The invention relates to a nano gap channel structure, which consists of a substrate 1, a dielectric layer 2, an electron emitter 3, a grid electrode 4 for controlling electron emission, an insulating layer 5, an electron extraction electrode 6, an electron optical system 7 for controlling characteristics of electron focusing and the like, and a collector 8, wherein the whole structure is shown in figure 1. The emitter and the grid are designed to be a flattened symmetrical structure through the combination of a high-precision micromachining technology and a thin film technology, so that the technological difficulty of a device structure is reduced, and electrons of the emitter are pulled into a nano-gap channel under the control of voltage applied by the grid; when a high voltage is applied to the electron extraction electrode, the moving electrons in the nano gap channel are pulled by the electric field of the extraction electrode, and the electrons can be fully or partially deflected to the electron extraction electrode and enter the electron optical system through the holes on the electron extraction electrode, and finally are collected by the electron collector through the regulation and optimization of the electron optical structure. The device can work normally when the size of the nano gap channel of the structure is far smaller than the mean free path of electrons due to the movement of electrons. The device can be placed in a vacuum environment, so that the mean free path of electrons can be increased, the size requirement on the nanogap can be enlarged, the manufacturing difficulty of the nanogap of the electron source is reduced, and the performance of the electron source is improved.
First, an electric field is turned on in order to reduce emission of the cathode, thereby improving device stability. The structure can be a single nano gap structure, the front end part of the electrode of the nano gap channel can be made into a round shape, a sharp cone shape and a combination shape, and the material with low work function is modified on the top surface, so that the field intensity of electron emission of the emitter is reduced, the field enhancement factor of the cathode can be improved, the electron emission probability of the emitter is enhanced, electrons can be emitted from the inside of the material more easily, and the emitted electrons can reach the nano gap channel more easily under the action of grid voltage.
In the above scheme, when electrons at the tip of the emitter are pulled into the nano-gap channel under the action of the gate electric field, the electrons are pulled to the extraction electrode under the electric field applied by the extraction electrode, and the electrons are not pulled out by the gate material due to the high work function.
In order to improve the total emission current of the device and further improve the performance index of the device, an array type combined nano gap structure can be selected structurally: the traditional single symmetrical nano gap is designed into a multi-emitter array type combined structure, so that the beam current density of the electron beam is improved.
The material of the gate electrode in the above scheme can be selected from traditional metal materials, such as gold, silver, copper, aluminum, molybdenum, tungsten, platinum, etc., and the gate electrode material needs to tunnel electrons to the vacuum outside the material under a higher electric field, so that electrons are prevented from being emitted from the gate electrode material itself when the gate electrode works at a low field strength.
According to the spatial structure of the electron source with the array combination structure in the scheme, under the grid voltage, electrons of multiple groups of emitters are emitted towards the central grid direction at the same time, and the structural design enables electron beam tracks to have a converging effect, so that the regulation and control of a later electron optical system are facilitated.
In order to improve the effective electron utilization rate of the device, the graphene film is covered at the extraction electrode film holes, electrons move in the electric field of the graphene meshes, distortion of the electric field at the film holes can be effectively reduced, the electrons move in the approximately parallel electric field, and the change of electron beam tracks is reduced, so that the passing rate of the electrons at the extraction electrode is improved, and the utilization rate of the electrons is further improved.
The graphene film in the scheme adopts a thermal vapor deposition method to prepare a plurality of layers of graphene films on the copper foil, and the graphene films are transferred to the extraction electrode film holes by adopting a transfer method.
In the embodiment of the invention, the nano-gap electron source structure has various combination forms of gap shapes between electrodes, and can be prepared by etching processes such as focused ion beam etching and the like without a mask (mask-free) so as to simplify the manufacturing process.
The electrode and the gap in the embodiment of the invention can be manufactured by the traditional semiconductor preparation processes of film plating, etching, electron beam lithography, focused ion beam and the like, and is characterized in that: the process is adopted to ensure that the gap between the emitter and the grid is within 500 nanometers.
In the embodiment of the invention, the gap area between the emitter electrode, the grid electrode and the extraction electrode adopts methods such as wet method, dry method, focused ion beam etching and the like to remove the gap and nearby base materials, thereby ensuring that electrons can be directly emitted from the cathode to the anode without collision with the substrate, reducing the effect of the electrons and the surface of the base, and reducing phonon scattering and charge conduction on the surface of the base.
The emitter, the grid and the extraction electrode in the embodiment of the invention are made of semiconductor or metal materials, and can be prepared by thin film deposition and other processes; the cathode material can also be a low-dimensional nano material, and can be prepared by processes such as transfer, screen printing or growth, etc., so that the work function of the cathode emission material is reduced, and the electron emission performance of the cathode is improved.
The semiconductor material in the embodiment of the invention comprises silicon, germanium, silicon carbide, gallium nitride, zinc oxide, gallium arsenide and the like, the metal material comprises gold, silver, copper, aluminum, iron, tungsten, platinum and the like and alloys formed by the gold, the silver, the copper, the aluminum, the iron, the tungsten, the platinum and the like, and the low-dimensional nanomaterial comprises graphene, carbon nano tubes, molybdenum disulfide, tungsten disulfide, zinc oxide nano wires and the like.
The specific material of the insulating substrate in the embodiment of the invention is a material with high dielectric constant.
The high dielectric constant material in the embodiment of the invention comprises silicon dioxide, aluminum oxide, hafnium oxide, boron nitride and the like, and the insulating layer prepared by utilizing an atomic layer deposition process or magnetron sputtering can ensure the insulating performance of the device by utilizing the thickness of the very thin oxide layer, so that the leakage current of the device can be effectively reduced.
The electron emitter and the grid electrode for controlling the electron emission are manufactured by a micro-processing technology; the electron source works: the electron emitter emits electrons under the control of the voltage applied by the grid electrode for controlling the electron emission, and when a high voltage is applied to the electron extraction electrode, the emitted electrons can be fully or partially deflected to the electron extraction electrode and enter the grid electrode for controlling the electron emission through holes of the electron extraction electrode, and finally are collected by the electron collector.
Example 1
The preparation flow of the nano-gap channel structure based on the gold electrode is shown in fig. 4, and the related process mainly comprises spin coating of photoresist, electron beam exposure, film deposition and stripping process of the gold electrode, and a mask-free direct-writing exposure mode is adopted, so that a preset exposure pattern is required to be drawn through L-wait graphic design software.
The specific preparation process flow is as follows:
(1) Pretreatment of a substrate: firstly, cutting a silicon dioxide piece substrate with single-side polished and single-side oxidized into square small pieces with the specification of 15mm multiplied by 15mm, annealing the square small pieces in a tube furnace at the high temperature of 400 ℃ under the protection of nitrogen for 1 hour, after the silicon piece is cooled to normal temperature, putting the silicon piece into acetone solution, absolute ethyl alcohol and deionized water in sequence, cleaning the silicon piece for 20-30 minutes by using an ultrasonic cleaning machine, finally drying the silicon piece by using a nitrogen gun, and placing the silicon piece in a baking box for baking, so that residual water vapor after cleaning is removed, and the cleanliness of the surface of the silicon piece oxide is fully maintained.
(2) Spin coating photoresist: firstly baking a silicon oxide wafer for 90s on a heating table at 90 ℃, then placing a clean square substrate on a vacuum chuck of a spin coater, sucking a proper amount of PMMA photoresist by a dropper to be dripped on the center of the substrate, firstly rotating for 5s at 600rpm, then rotating for 30s at 3000rpm, then baking the substrate on the heating table at 180 ℃ for 90s, so that the photoresist is fixed and molded. The thickness parameter of the photoresist can be adjusted by adjusting the rotation speed and time during spin coating.
(3) Electron beam lithography: electron beam exposure is carried out on the photoresist on the square substrate by using a pre-designed photoetching layout, and the exposure dose is 600 mu C/cm 2 The electron beam current size was 100pA.
(4) Developing: and (3) putting the substrate subjected to electron beam exposure into a developing solution with the ratio of 4-methyl-2-pentanone to isopropanol of 1:3 for developing for 120s, transferring into isopropanol for fixing for 60s, and finally drying by using a nitrogen gun.
(5) Electron beam evaporation: fixing a square substrate sample on a tray, hanging upside down above an electron beam evaporation chamber, enabling a photoetching surface to face downwards, putting metal chromium, opening electron beam voltage and a gun filament after preparation is completed, depositing a chromium connecting layer after reaching current required by evaporation, cooling to room temperature after finishing, and finally replacing and putting a gold wire for electron beam evaporation of a gold film, wherein the chromium connecting layer is used for improving the adsorption force between the gold film and the surface of a substrate.
(6) Stripping: and (3) putting the sample deposited with the gold electrode into an acetone solution for stripping photoresist, putting the sample into an isopropanol solution for cleaning after stripping, drying by nitrogen, and finally putting the sample into a drying oven at 90 ℃ for drying to finish stripping.
(7) Post-treatment: the thermal annealing treatment is carried out on the stripped sample by using a tubular furnace under the conditions of hydrogen (70 sccm) and argon (40 sccm) at a high temperature of 400 ℃, so that residual photoresist can be removed by using hydrogen, and the annealing can improve the stability of the gold electrode, so that the gold electrode is not easy to fall off from the silicon dioxide layer of the substrate.
Example 2
The preparation flow of the channel structure based on the carbon-based nano-gap is shown in fig. 5, wherein the preparation flow relates to an electron beam exposure process, a thin film process, a micro-nano material growth process or a thin film transfer method.
The specific preparation process flow is as follows:
i, pretreatment of a substrate: firstly, cutting a silicon dioxide piece substrate with single-side polished and single-side oxidized into square small pieces with the specification of 15mm multiplied by 15mm, annealing the square small pieces in a tube furnace at the high temperature of 400 ℃ under the protection of nitrogen for 1 hour, after the silicon piece is cooled to normal temperature, putting the silicon piece into acetone solution, absolute ethyl alcohol and deionized water in sequence, cleaning the silicon piece for 20-30 minutes by using an ultrasonic cleaning machine, finally drying the silicon piece by using a nitrogen gun, and placing the silicon piece in a baking box for baking, so that residual water vapor after cleaning is removed, and the cleanliness of the surface of the silicon piece oxide is fully maintained.
II spin coating photoresist: firstly baking a silicon oxide wafer for 90s on a heating table at 90 ℃, then placing a clean square substrate on a vacuum chuck of a spin coater, sucking a proper amount of PMMA photoresist by a dropper to be dripped on the center of the substrate, firstly rotating for 5s at 600rpm, then rotating for 30s at 3000rpm, then baking the substrate on the heating table at 180 ℃ for 90s, so that the photoresist is fixed and molded. The thickness parameter of the photoresist can be adjusted by adjusting the rotation speed and time during spin coating.
III electron beam lithography: adopting a direct writing type exposure mode without a mask mode, drawing a preset exposure pattern through L-wait pattern design software, and carrying out electron beam exposure on photoresist on a substrate, wherein the exposure dose is 600 mu C/cm 2 The electron beam current size was 100pA.
IV, developing: and (3) putting the substrate subjected to electron beam exposure into a developing solution with the ratio of 4-methyl-2-pentanone to isopropanol of 1:3 for developing for 120s, transferring into isopropanol for fixing for 60s, and finally drying by using a nitrogen gun.
V electron beam evaporation: fixing a square substrate sample on a tray, hanging upside down above an electron beam evaporation chamber, enabling a photoetching surface to face downwards, putting metal chromium, opening electron beam voltage and a gun filament after preparation is completed, depositing a chromium connecting layer after reaching current required by evaporation, cooling to room temperature after finishing, and finally replacing and putting a gold wire for electron beam evaporation of a gold film, wherein the chromium connecting layer is used for improving the adsorption force between the gold film and the surface of a substrate.
VI stripping: and (3) putting the sample deposited with the gold electrode into an acetone solution for stripping photoresist, putting the sample into an isopropanol solution for cleaning after stripping, drying by nitrogen, and finally putting the sample into a drying oven at 90 ℃ for drying to finish stripping.
VII, sputtering: and sputtering and depositing an alumina layer in the developed pattern to serve as a material of the sacrificial layer of the post electrode.
VIII transfer: soaking the substrate obtained in the last step in APTES liquid (mixed liquid of 3-aminopropyl triethoxysilane and isopropanol) for 60 minutes, taking out, cleaning residual impurities, putting into carbon nano tube dispersion liquid with prepared concentration, soaking for 12 hours, flushing the residual impurities, and drying with nitrogen for standby.
IX stripping: and soaking the prepared substrate in hydrochloric acid solution for 15 seconds, taking out, cleaning with deionized water, and drying with nitrogen for later use.
Example 3
On the basis of the preparation of the nano-gap channel electron source, the power consumption of the whole device is reduced in order to reduce the voltage of a collector. The structural design of the graphene grid is increased, the emission of the electron beam perpendicular to the plane where the emitter and the extraction electrode are located is realized, the self electron emission probability of the extraction electrode is reduced, the thickness value of the insulating layer and the length of the channel are an order of magnitude larger, and the direct emission of the electron of the extraction electrode material can be avoided under the voltage of the grid. The preparation process is based on the preparation process of the vacuum channel nanometer gap structure, a thin film growth process and an etching process are combined, a grid hole structure is prepared above the channel, and graphene can be selected to cover the grid hole to reduce the size of the grid hole and reduce the distortion of an electric field at the grid hole, so that the aim of optimizing the beam current of the electron beam is fulfilled.
The specific preparation flow is shown in figure 6. On the basis of the prepared nano-gap structure, the preparation process is continued as follows:
a. film deposition: on the nano-gap structure, an insulating layer (silicon oxide, etc.) is grown by a plasma enhanced chemical vapor deposition method, and then a layer of metal is deposited as a conductive layer.
b. Wet etching: the silicon oxide grown on the trench is removed by means of a hydrofluoric acid solution.
c. And (3) transferring: and transferring the graphene film onto the metal holes, wherein the aperture of the grid holes is not more than 5um.
Claims (10)
1. The nano-gap electron source is characterized by comprising a substrate (1), a dielectric layer (2), an electron emitter (3), a grid electrode (4) for controlling electron emission, an insulating layer (5), an electron extraction electrode (6), an electron optical system (7) for controlling electron focusing characteristics, a collector (8) and a nano-gap channel (9); the structure is as follows: the method comprises the steps of arranging a dielectric layer (2) on the upper surface of a substrate (1), arranging an electron emitter (3) and a grid electrode (4) for controlling electron emission on the upper surface of the dielectric layer (2), wherein the distance between the electron emitter (3) and the grid electrode (4) for controlling electron emission is smaller than 500 nanometers, arranging an insulating layer (5) on the upper surface of the electron emitter (3) and the grid electrode (4) for controlling electron emission, covering an electron extraction electrode (6) with an electron extraction hole on the upper surface of the insulating layer (5), arranging an electron optical system (7) for controlling electron focusing characteristics above the electron extraction electrode (6) with the electron extraction hole, and arranging a collector (8) above the electron optical system (7) for controlling electron focusing characteristics.
2. The nanogap electron source according to claim 1, wherein the electron emitter (3) is formed of a metal or semiconductor material having good electrical conductivity, and has an end formed in a flat, circular, tapered, or a combination thereof shape so as to emit electrons into the nanogap channel under the influence of the gate electrode.
3. The nanogap electron source according to claim 1, wherein the gate electrode (4) for controlling electron emission is made of a metal or semiconductor material having good conductivity, and a high work function conductive material is used to prevent the gate electrode from emitting electrons under the action of the electron extraction electrode (6), or a high work function material or a dielectric layer film is formed on the surface of the gate electrode (4) for controlling electron emission to reduce self electron emission.
4. The nanogap electron source according to claim 1, wherein the electron extraction electrode (6) is located above the plane of the nanogap channel (9), the nanogap channel (9) and the electron extraction electrode (6) are separated by an insulating layer (5), a circular hole of the electron extraction electrode (6) is formed by a single or array film hole shape at a position corresponding to the nanogap channel (9), electrons emitted from the electron emitter (3) are deflected to the electron extraction electrode (6) by a voltage applied to the electron extraction electrode (6), and the electrons are introduced into the electron optical system (7) through an extraction electrode hole on the electron extraction electrode (6), and the circular hole on the electron extraction electrode (6) is used as an electron extraction channel.
5. The nanogap electron source according to claim 1 or 4, wherein the electron extracting electrode (6) is formed of a circular hole formed in a metal layer as an electron extracting channel or a material having a net structure of electron channels.
6. The nanogap electron source according to claim 1, wherein the nanogap channels (9) are spatially arranged to form differently shaped arrays having large electron emission currents for use in different applications.
7. The nanogap electron source according to claim 1, wherein the dielectric layer (2) and the insulating layer (5) are formed of silicon oxide, zirconium oxide, aluminum oxide, hafnium oxide, silicon nitride or gallium nitride.
8. The nanogap electron source according to claim 1, wherein the electron emitter (3) is formed of a metal or a two-dimensional nanomaterial having a low work function, good chemical stability, and excellent electrical conductivity.
9. A method for preparing the nanogap electron source according to claim 1, wherein the preparation process comprises the steps of:
step 1: preparing a dielectric layer; preparing an oxide layer material on the polished heavily doped silicon wafer by utilizing an atomic layer deposition process;
step 2: preparing a patterned electrode; designing the shape of the electrode by means of an exposure process; preparing a desired electrode pattern on a silicon substrate;
step 3: preparing an electrode; magnetron sputtering, electron beam evaporation or evaporation process is adopted; filling a required electrode material in the electrode pattern on the basis of the step 2;
step 4: emitter and gate preparation; a thermal chemical vapor deposition method or a transfer method is adopted; on the basis of the step 3, transferring a material with a low work function at the tip of an electron emitter, and obtaining a regular tip of the electron emitter (3) and a corresponding grid electrode (4) structure for controlling electron emission by adopting a stripping method after the preparation is finished;
step 5: preparing an insulating layer; on the basis of the step 4, depositing an oxide insulating layer on the surfaces of an electron emitter (3) and a grid electrode (4) for controlling electron emission by utilizing an atomic layer deposition and magnetron sputtering process;
step 6: preparing an extraction electrode; a hole is reserved right above the nano gap channel (9) by combining an overlay process and a film process, and an insulating layer (5) and an electron extraction electrode (6) are sequentially prepared;
step 7: preparing an electron extraction polar mesh; on the basis of the step 5, a mode of transferring a graphene film is adopted, and the graphene film is covered on the surface of a round hole reserved in the electron extraction electrode (6) to form graphene meshes;
step 8: assembling a matched electron optical system and an electron extraction electrode; and (3) assembling the structure prepared in the steps 1 to 7, the electron optical system (7) for controlling the electron focusing characteristic and the collector (8) by using a finishing die.
10. A method for preparing the nanogap electron source according to claim 1, which is characterized by adopting a top-down preparation process:
step 1: preparing a dielectric layer, namely preparing the dielectric layer on the polished heavily doped silicon wafer by utilizing a plasma enhanced chemical vapor deposition method or an atomic layer deposition process;
step 2: preparing an electron emitter and a grid electrode, sequentially preparing the electron emitter (3) and the grid electrode (4) on the surface of the insulating layer (5), and etching a required nano-gap channel (9) by means of an electron beam direct writing or focused ion beam exposure technology;
step 3: preparing an insulating layer, and preparing an oxide insulating layer (5) by utilizing atomic layer deposition;
step 4: preparing an electron extraction electrode (6), reserving a hole right above a nano gap channel (9) by combining an overlay process and a thin film process, and sequentially preparing an insulating layer (5) and the electron extraction electrode;
step 5: preparing an electron extraction electrode mesh, namely covering a graphene film on the surface of a round hole reserved in an electron extraction electrode by adopting a mode of transferring the graphene film on the basis of the step 5 to form a graphene mesh;
step 6: and (3) assembling a matched electron optical system and a collector, and assembling the electron lens with the structure prepared in the steps 1 to 5 by using a finishing die.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210099674.6A CN114512379B (en) | 2022-01-27 | 2022-01-27 | Nano-gap electron source structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210099674.6A CN114512379B (en) | 2022-01-27 | 2022-01-27 | Nano-gap electron source structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114512379A CN114512379A (en) | 2022-05-17 |
| CN114512379B true CN114512379B (en) | 2024-02-09 |
Family
ID=81549120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210099674.6A Active CN114512379B (en) | 2022-01-27 | 2022-01-27 | Nano-gap electron source structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114512379B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637561A (en) * | 2012-04-21 | 2012-08-15 | 福州大学 | Manufacturing method of surface conduction electron emission source with uniform and controllable nano gaps |
| CN110310873A (en) * | 2019-06-25 | 2019-10-08 | 东南大学 | A kind of vertical-type nano gap evacuated transistor of extended grid structure and preparation method thereof |
-
2022
- 2022-01-27 CN CN202210099674.6A patent/CN114512379B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637561A (en) * | 2012-04-21 | 2012-08-15 | 福州大学 | Manufacturing method of surface conduction electron emission source with uniform and controllable nano gaps |
| CN110310873A (en) * | 2019-06-25 | 2019-10-08 | 东南大学 | A kind of vertical-type nano gap evacuated transistor of extended grid structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114512379A (en) | 2022-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109824009B (en) | Manufacturing method of field emission ion neutralizer chip based on SOI (silicon on insulator) process | |
| US7501146B2 (en) | Carbon nanotube emitter and its fabrication method and field emission device (FED) using the carbon nanotube emitter and its fabrication method | |
| CN101452797B (en) | Field emission type electronic source and manufacturing method thereof | |
| US5391956A (en) | Electron emitting device, method for producing the same and display apparatus and electron beam drawing apparatus utilizing the same | |
| CN101638781B (en) | Method for directly heating metal membrane to grow oxide nanowires in array-type arranged microcavity structure, and application thereof | |
| CN110600350B (en) | Nano cold cathode electron source with double-ring grid structure and manufacturing method thereof | |
| CN101494144B (en) | Structure of nanometer line cold-cathode electron source array with grid and method for producing the same | |
| EP0520780A1 (en) | Fabrication method for field emission arrays | |
| US7170223B2 (en) | Emitter with dielectric layer having implanted conducting centers | |
| JP2007504607A (en) | Field emission device | |
| RU2391738C2 (en) | Structure and method for manufacturing of field emission elements with carbon nanotubes used as cathodes | |
| CN114512379B (en) | Nano-gap electron source structure and preparation method thereof | |
| CN104078293B (en) | A kind of field emitting electronic source and preparation method thereof | |
| CN111081505B (en) | Nano cold cathode electron source with coplanar double-gate focusing structure and manufacturing method thereof | |
| CN104091743B (en) | The manufacture method of a kind of self-aligning grid structure nanometer wire cold-cathode electron source array and structure thereof | |
| CN105428185B (en) | Fabrication method of quasi-integrated grid-controlled carbon nanotube/nanowire field emission cathode | |
| CN111725040B (en) | Preparation method of field emission transistor, field emission transistor and equipment | |
| CN105679628B (en) | A kind of Field Electron Emission device architecture with reverse bias nano junction | |
| CN109904052B (en) | Ion neutralizer device and preparation method thereof | |
| CN105551911B (en) | A kind of self-aligning grid carbon nano-tube/nano-wire field-transmitting cathode preparation method | |
| CN107170657A (en) | A kind of preparation method without integrated grid pointed cone array field emission cathode | |
| CN105742139A (en) | Composite type field emission negative electrode emission source and preparation method therefor | |
| CN114613842A (en) | On-chip integrated ultrafast nano electronic device and preparation method thereof | |
| CN113793789B (en) | Side anode vacuum channel nanometer gap triode and preparation method thereof | |
| Grant et al. | Construction of a ultrananocrystalline diamond-based cold cathode arrays for a flat-panel x-ray source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |