CN114512379A - Nano-gap electron source structure and preparation method thereof - Google Patents
Nano-gap electron source structure and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H01J3/02—Electron guns
- H01J3/027—Construction of the gun or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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Abstract
The invention discloses a nano-gap electron source and a preparation method thereof. The nano-gap electron source is prepared on a plane insulating substrate and structurally comprises a substrate (1), a dielectric layer (2), an electron emitter (3), a grid (4) for controlling electron emission, an insulating layer (5), an electron extraction electrode (6), an electron optical system (7) for controlling characteristics such as electron focusing and the like, and a collector (8). The preparation method combines high-precision etching or electron beam exposure process, transfer means and thin film process. The invention designs and combines the existing semiconductor processing technology to obtain a scheme of a miniaturized and integrated electron source device so as to obtain the technical advantages of high frequency and quick response, has higher application potential in novel electronic components and micro-nano electromechanical systems, and lays a technical foundation for realizing on-chip integrated vacuum electronic devices in the future.
Description
Technical Field
The invention relates to a nano-gap electron source and a preparation method thereof, belonging to the field of novel micro-nano electrons and vacuum nano electronic devices.
Background
The electron source is used as a core element of a vacuum device, and is widely applied in various fields such as communication, military, medical treatment, security inspection and the like, and the electron source is needed in traveling wave tubes in radar detection, X-ray tubes in medical diagnosis, electronic imaging equipment in object morphology imaging and the like. The field emission cold cathode electron source has the characteristics of quick response, high current density, no need of preheating, high efficiency and the like, and can be integrated, so that the miniaturization of the traditional vacuum device becomes possible.
Since the volume of the electron source, which is a core element of the vacuum device, directly affects the miniaturization and integration of the vacuum device, it is important to solve the problem of the miniaturization and integration of the electron source. The nano-gap channel structure proposed in recent years also belongs to a field emission cold cathode structure, namely, in a very small nano-scale electrode gap channel, even under the atmospheric condition, the mean free path of electrons is larger than the size of the nano-scale gap channel, the electrons can be more easily transported without collision in the channel, the ballistic transport in a vacuum channel is similar, and a lower working voltage can be obtained. With the continuous development of micro-nano processing technology, the preparation process of the nano channel structure is simpler and more convenient, so that the traditional electron source structure has the potential of miniaturization and integration.
The nano-gap can be regarded as a vacuum channel, the nano-gap structure is taken as an electron source, and the structure characteristics of flattening and compactness are that the structure is different from the structure of the traditional electron source, so that the processing technology of a vertical structure is simplified, and the integral integration level of the device is improved. However, the structure still has many problems, the stability of the device is greatly influenced by the emitter and the grid, and the total electron emission and the effective electron utilization rate of the device are influenced by the structural design of the device.
Disclosure of Invention
The technical problem is as follows: the invention aims to provide a nano-gap electron source structure and a preparation method thereof, the highly integrated and compact electron source structure is prepared by utilizing a high-precision semiconductor process, electrons can be transmitted in a ballistic transport or tunneling mode under the scale, the technical bottleneck that the traditional electro-vacuum device needs strict packaging is broken through, and the requirement and the application range of the vacuum electronic device on the vacuum degree are widened.
The technical scheme is as follows: in order to overcome the problems and realize the device indexes of low loss and large current density of the nanometer gap electron source, the invention provides the nanometer gap electron source which comprises a substrate, a dielectric layer, an electron emitter, a grid for controlling electron emission, an insulating layer, an electron extraction electrode, an electron optical system for controlling the characteristics of electron focusing and the like, a collector and a nanometer gap channel; the structure is as follows: the electron focusing device comprises a substrate, a dielectric layer, an electron emitter, a grid electrode, an insulating layer, an electron extraction electrode, an electron optical system and a collector, wherein the dielectric layer is arranged on the upper surface of the substrate, the electron emitter and the grid electrode for controlling electron emission are arranged on the upper surface of the dielectric layer, the interval between the electron emitter and the grid electrode for controlling electron emission is smaller than 500 nanometers of a gap channel, the insulating layer is arranged on the upper surfaces of the electron emitter and the grid electrode for controlling electron emission, the electron extraction electrode with an electron extraction hole is covered on the upper surface of the insulating layer, the electron optical system for controlling electron focusing and other characteristics is arranged above the electron extraction electrode with the electron extraction hole, and the collector is arranged above the electron optical system for controlling electron focusing and other characteristics.
Wherein:
the electron emitter is made of metal or semiconductor materials with good conductivity, and the end of the electron emitter is made into shapes of flat, round, pointed cone and combinations of the flat, round and pointed cones, so that electrons can be emitted into the nano gap channel under the action of the grid electrode conveniently.
The grid for controlling electron emission is made of metal or semiconductor material with good conductivity, and in order to prevent the grid from emitting electrons under the action of the electron extraction electrode, a high work function conductive material is adopted, or a high work function material or a dielectric layer film is manufactured on the surface of the grid for controlling electron emission so as to reduce self electron emission.
The electron extraction electrode is positioned on the plane of the nanometer gap channel, the nanometer gap channel and the electron extraction electrode are separated by an insulating layer, a round hole of the electron extraction electrode is formed by a single or array membrane hole shape at the position corresponding to the nanometer gap channel, electrons emitted by the electron emitting electrode are deflected to the electron extraction electrode through the voltage applied on the electron extraction electrode, the electrons are introduced into the electron optical system through the extraction electrode hole on the electron extraction electrode, and the round hole on the electron extraction electrode is used as an electron extraction channel.
The electron extraction electrode is made of round holes made on the metal layer as electron leading-out channels or materials with a net structure of the electron channels.
The nano-gap channels are arranged in space to form arrays with different shapes and large electron emission current so as to be used in different application occasions.
The dielectric layer and the insulating layer are made of silicon oxide, zirconium oxide, aluminum oxide, hafnium oxide, silicon nitride or gallium nitride.
The electron emitter is made of metal or two-dimensional nano material with low work function, good chemical stability and excellent conductivity.
The preparation process of the nanometer gap electron source includes the following steps:
step 1: preparing a dielectric layer; and preparing an oxide layer material on the polished heavily doped silicon wafer by utilizing an atomic layer deposition process.
Step 2: preparing a patterned electrode; designing the shape of the electrode by means of an exposure process; preparing a desired electrode pattern on a silicon substrate;
and step 3: preparing an electrode; magnetron sputtering, electron beam evaporation or evaporation process is adopted; on the basis of step 2, filling the electrode pattern with a required electrode material;
and 4, step 4: preparing an emitter and a grid; adopting a thermal chemical vapor deposition method or a transfer method; on the basis of the step 3, transferring a material with low work function to the tip of the electron emitter, and obtaining the regular tip of the electron emitter and a corresponding grid structure for controlling electron emission by adopting a stripping method after the preparation is finished;
and 5: preparing an insulating layer; on the basis of the step 4, depositing oxide insulating layers on the surfaces of the electron emitter and the grid electrode for controlling electron emission by utilizing an atomic layer deposition and magnetron sputtering process;
step 6: preparing an extraction electrode; combining an alignment process and a film process, reserving a hole right above the nano-gap channel, and sequentially preparing an insulating layer and an electron extraction electrode;
and 7: preparing an electron extraction electrode mesh; on the basis of the step 5, covering the graphene film on the surface of the round hole reserved in the electron extraction electrode in a mode of transferring the graphene film to form a graphene mesh;
and 8: the matched electron optical system and the electron extraction electrode are assembled; the structures prepared in steps 1 to 7, the electron optical system controlling the characteristics of electron focusing, and the collector are assembled using a finishing mold.
Another method for preparing a nanogap electron source according to the invention comprises the steps of:
adopts a top-down preparation process:
step 1: preparing a dielectric layer, namely preparing the dielectric layer on the polished heavily doped silicon wafer by utilizing a plasma enhanced chemical vapor deposition method or an atomic layer deposition process;
step 2: preparing an electron emitter and a grid electrode, namely preparing the electron emitter and the grid electrode on the surface of the insulating layer in sequence, and etching a required nano gap channel by using an electron beam direct writing or focused ion beam exposure technology;
and step 3: preparing an insulating layer, namely preparing an oxide insulating layer by utilizing atomic layer deposition;
and 4, step 4: preparing an electron extraction electrode, reserving a hole right above the nano-gap channel by combining an alignment process and a film process, and sequentially preparing an insulating layer and the electron extraction electrode;
and 5: preparing a mesh of the electron extraction electrode, namely covering a graphene film on the surface of a reserved round hole of the electron extraction electrode by adopting a graphene film transfer mode on the basis of the step 5 to form a graphene mesh;
step 6: and (3) assembling a matched electronic optical system and a collector, and assembling the electronic lens and the structure prepared in the steps 1 to 5 by using a finishing die.
Has the advantages that: compared with the prior art, the invention adopting the technical scheme has the following technical effects:
1) in the structural design of the nano-gap electron source disclosed by the invention, the electron emitter and the grid adopt a flat structural design, so that on one hand, the surface electric field intensity of the emitter and the grid area can be effectively enhanced, thereby improving the electron emission efficiency and reducing the starting voltage; on the other hand, the grid electrode material is made of a metal material with a higher work function, so that electrons of the grid electrode are difficult to emit, and the current density is increased;
2) the invention utilizes the combination form of the multiple emitting electrodes, not only improves the electron beam current of electron emission, but also ensures that the electron beams have convergence effect by the emitting electrodes and the grid structure, and is beneficial to the modulation of electron optical systems on electrons, thereby improving the brightness index of the electron beams;
3) the invention utilizes the high-precision semiconductor process to prepare the highly integrated and compact electron source structure, electrons can be transmitted in a ballistic transport or tunneling mode under the scale, the technical bottleneck that the traditional electro-vacuum device needs strict encapsulation is broken through, and the requirement and the application range of the vacuum electron device on the vacuum degree are widened.
Drawings
Fig. 1 is a schematic view of the overall structure of the nanogap channel according to the invention.
Fig. 2 is a top view of a single nanogap channel emitter according to the invention.
Fig. 3 is a top view of a plurality of nanogap channel ring emitters in accordance with the invention.
FIG. 4 is a schematic diagram of a preparation process of a gold nanogap channel electron source in the invention.
FIG. 5 is a schematic diagram of a process for preparing a carbon-based nanogap channel electron source according to the invention.
FIG. 6 is a schematic diagram of a process for manufacturing a band-gate type nanogap channel electron source according to the invention.
The figure shows that: the device comprises a substrate 1, a dielectric layer 2, an electron emitter 3, a grid 4, an insulating layer 5, an electron extraction electrode 6, an electron optical system 7, a collector 8 and a nanometer gap channel 9.
Detailed Description
The nano-gap channel structure consists of a substrate 1, a dielectric layer 2, an electron emitter 3, a grid 4 for controlling electron emission, an insulating layer 5, an electron extraction electrode 6, an electron optical system 7 for controlling characteristics such as electron focusing and the like, and a collector 8, and the whole structure is shown in figure 1. By combining a high-precision micromachining technology and a thin film technology, the emitter and the grid are designed to be flat symmetrical structures so as to reduce the technological difficulty of the device structure, and the electrons of the emitter are pulled into the nanometer gap channel under the control of the voltage applied by the grid; when high voltage is applied to the electron extraction electrode, the moving electrons in the nano-gap channel are drawn by an electric field of the extraction electrode, and the electrons can totally or partially deflect to the electron extraction electrode, enter an electron optical system through holes in the electron extraction electrode, are finally collected by the electron collector through the regulation and optimization of an electron optical structure. The device can work normally when the size of the nanometer gap channel of the electron motion is far smaller than the mean free path of the electron. The device can be placed in a vacuum environment, the mean free path of electrons can be increased, the size requirement of the nanogap can be enlarged, the manufacturing difficulty of the electron source nanogap is reduced, and the performance of the electron source is improved.
First, the electric field is turned on in order to reduce emission of the cathode, thereby improving device stability. The structure can adopt a single nanometer gap structure, the front end part of the electrode of the nanometer gap channel can be made into a shape of a circle, a pointed cone and a combination of the circle and the pointed cone, the surface of the top end is decorated with a material with low work function, the field intensity of the electron emission of the emitter is reduced, the field enhancement factor of the cathode and the electron emission probability of the emitter can be improved, so that electrons can be emitted from the inside of the material more easily, and the emitted electrons can reach the nanometer gap channel more easily under the action of grid voltage.
In the above scheme, when electrons at the tip of the emitter are pulled into the nanogap channel under the action of the gate electric field, the electrons are pulled to the extraction electrode under the action of the electric field applied by the extraction electrode, and the electrons of the gate material are not pulled out due to the high work function.
In order to improve the total emission current of the device and further improve the performance index of the device, the array-type combined nano gap structure can be selected and used structurally: the traditional single symmetrical nanometer gap is designed into a multi-emitter array combined structure, and the beam current density of the electron beam is improved.
The material of the grid electrode in the scheme can be selected from traditional metal materials, such as gold, silver, copper, aluminum, molybdenum, tungsten, platinum and the like, and the grid electrode material can be tunneled and transited to the vacuum outside the material only under a higher electric field, so that when the grid electrode works at a low field intensity, electrons are prevented from being emitted from the grid electrode material.
According to the space structure of the electron source with the array combined structure, electrons of the multiple groups of emitters are emitted towards the central grid direction at the same time under the grid voltage, and the electron beam track has a convergence effect due to the structural design, so that the regulation and control of a later-stage electron optical system are facilitated.
In order to improve the effective electron utilization rate of the device, the graphene film covers the extraction electrode film holes, electrons move in an electric field of graphene meshes, the distortion of the electric field at the film holes can be effectively reduced, the electrons move in an approximately parallel electric field, and the change of electron beam tracks is reduced, so that the passing rate of the electrons at the extraction electrode is improved, and the utilization rate of the electrons is further improved.
In the scheme, the graphene film is prepared into a multilayer graphene film on a copper foil by adopting a thermal vapor deposition method, and the graphene film is transferred to the position of the extraction electrode film hole by adopting a transfer method.
In the embodiment of the invention, the nano-gap electron source structure has various gap shape combination forms between the electrodes, can be prepared by etching processes such as focused ion beam etching and the like, and does not need a mask-free (mask-free) so as to simplify the manufacturing process.
The electrode and the gap can be manufactured by the traditional semiconductor preparation process such as film coating, etching, electron beam lithography, focused ion beam and the like, and the method is characterized in that: the gap between the emitter and the grid is ensured to be within 500 nanometers by adopting the process.
In the embodiment of the invention, the gap area between the emitter, the grid and the extraction electrode adopts methods of wet method, dry method, focused ion beam etching and the like to remove the gap and the nearby base material, thereby ensuring that electrons can be directly emitted from the cathode to the anode without colliding with the substrate, reducing the action of the electrons and the surface of the base, and reducing phonon scattering and charge conduction on the surface of the base.
In the embodiment of the invention, the emitter, the grid and the extraction electrode are made of semiconductor or metal materials and can be prepared by processes such as film deposition and the like; the material can also be a low-dimensional nano material, and can be prepared by transfer or screen printing or growth and other processes, so that the work function of the cathode emission material is reduced, and the electron emission performance of the cathode is improved.
The semiconductor material in the embodiment of the invention comprises silicon, germanium, silicon carbide, gallium nitride, zinc oxide, gallium arsenide and the like, the metal material comprises gold, silver, copper, aluminum, iron, tungsten, platinum and the like and alloy formed by the gold, the silver, the copper, the aluminum, the iron, the tungsten, the platinum and the like, and the low-dimensional nano material comprises graphene, carbon nano tubes, molybdenum disulfide, tungsten disulfide, zinc oxide nano wires and the like.
The specific material of the insulating substrate in the embodiment of the invention is a high dielectric constant material.
The high-dielectric-constant material in the embodiment of the invention comprises silicon dioxide, aluminum oxide, hafnium oxide, boron nitride and the like, and the insulating layer prepared by utilizing an atomic layer deposition process or magnetron sputtering can ensure the insulating property of a device by utilizing the thickness of a thin oxide layer, and can effectively reduce the leakage current of the device.
The electron emitter and the grid for controlling the electron emission are manufactured by a micro-processing technology; when the electron source works: the electron emitter emits electrons under the control of the voltage applied to the gate electrode for controlling electron emission, and when a high voltage is applied to the electron extractor, the emitted electrons can be totally or partially deflected to the electron extractor, pass through the holes of the electron extractor, enter the gate electrode for controlling electron emission, and are finally collected by the electron collector.
Example 1
The gold electrode-based nanogap channel structure preparation process is shown in fig. 4, the related processes mainly comprise spin coating of photoresist, electron beam exposure, thin film deposition of a gold electrode and stripping processes, a maskless direct-writing exposure mode is adopted, and a preset exposure pattern needs to be drawn through L-edge graphic design software.
The specific preparation process flow is as follows:
(1) substrate pretreatment: firstly, cutting a silicon dioxide sheet substrate with a polished single surface and an oxidized single surface into square small pieces with the specification of 15mm multiplied by 15mm, annealing for 1 hour in a tubular furnace at a high temperature of 400 ℃ under the protection of nitrogen, sequentially putting the silicon wafer into acetone solution, absolute ethyl alcohol and deionized water after cooling to the normal temperature, respectively cleaning for 20-30 min by using an ultrasonic cleaning machine, finally blowing and drying by using a nitrogen gun, placing the substrate in a baking oven for drying, and removing residual water vapor after cleaning so as to fully maintain the cleanliness of the surface of the silicon oxide sheet.
(2) Spin coating a photoresist: baking a silicon oxide wafer for 90 seconds on a heating table at 90 ℃, then placing a clean square substrate on a vacuum chuck of a spin coater, sucking a proper amount of PMMA photoresist by a dropper, dripping the PMMA photoresist on the center of the substrate, rotating the substrate at the rotating speed of 600rpm for 5 seconds, rotating the substrate at the rotating speed of 3000rpm for 30 seconds, and then baking the substrate on a heating table at the baking temperature of 180 ℃ for 90 seconds to fix and form the photoresist. The thickness parameter of the photoresist can be adjusted by adjusting the rotating speed and time during spin coating.
(3) Electron beam lithography: performing electron beam exposure on the photoresist on the square substrate by using a pre-designed photoetching layout, wherein the exposure dose is 600 mu C/cm2The size of the electron beam is 100 pA.
(4) And (3) developing: and (3) placing the substrate subjected to electron beam exposure into a developing solution with the ratio of 4-methyl-2-pentanone to isopropanol being 1:3 for developing for 120s, then transferring into isopropanol for fixing for 60s, and finally drying by using a nitrogen gun.
(5) Electron beam evaporation: fixing a square substrate sample on a tray, hanging upside down above an electron beam evaporation chamber, making a photoetching surface face downwards, putting metal chromium, opening electron beam voltage and a gun filament after preparation is finished, depositing a chromium connecting layer after the current required by evaporation is achieved, cooling to room temperature after the current is finished, and finally putting gold wires again for electron beam evaporation of a gold film, wherein the chromium connecting layer is used for improving the adsorption force of the gold film and the surface of the substrate.
(6) Stripping: and (3) putting the sample deposited with the gold electrode into an acetone solution for stripping the photoresist, putting the sample into an isopropanol solution for cleaning after the stripping is finished, blowing the sample to be dry by using nitrogen, and finally putting the sample into a baking oven at the temperature of 90 ℃ for drying to finish the stripping.
(7) And (3) post-treatment: the sample obtained after stripping is subjected to thermal annealing treatment by a tubular furnace at a high temperature of 400 ℃ in the environment of hydrogen (70sccm) and argon (40sccm), so that residual photoresist can be removed by using hydrogen, and the stability of the gold electrode can be improved by annealing, so that the gold electrode is not easy to strip from the silicon dioxide layer of the substrate.
Example 2
The preparation process based on the carbon-based nano gap channel structure is shown in fig. 5, and relates to an electron beam exposure process, a film process, a micro-nano material growth process or a film transfer method.
The specific preparation process flow is as follows:
i, pretreatment of a substrate: firstly, cutting a silicon dioxide sheet substrate with a polished single surface and an oxidized single surface into square small pieces with the specification of 15mm multiplied by 15mm, annealing for 1 hour in a tubular furnace at a high temperature of 400 ℃ under the protection of nitrogen, sequentially putting the silicon wafer into acetone solution, absolute ethyl alcohol and deionized water after cooling to the normal temperature, respectively cleaning for 20-30 min by using an ultrasonic cleaning machine, finally blowing and drying by using a nitrogen gun, placing the substrate in a baking oven for drying, and removing residual water vapor after cleaning so as to fully maintain the cleanliness of the surface of the silicon oxide sheet.
II, spin coating photoresist: baking a silicon oxide wafer for 90 seconds on a heating table at 90 ℃, then placing a clean square substrate on a vacuum chuck of a spin coater, sucking a proper amount of PMMA photoresist by a dropper, dripping the PMMA photoresist on the center of the substrate, rotating the substrate at the rotating speed of 600rpm for 5 seconds, rotating the substrate at the rotating speed of 3000rpm for 30 seconds, and then baking the substrate on a heating table at the baking temperature of 180 ℃ for 90 seconds to fix and form the photoresist. The thickness parameter of the photoresist can be adjusted by adjusting the rotating speed and time during spin coating.
III, electron beam lithography: adopting a maskless direct writing type exposure mode, drawing a preset exposure pattern through L-edge graphic design software, and carrying out electron beam exposure on the photoresist on a substrate with the exposure dose of 600 mu C/cm2The size of the electron beam is 100 pA.
IV, developing: and (3) placing the substrate subjected to electron beam exposure into a developing solution with the ratio of 4-methyl-2-pentanone to isopropanol being 1:3 for developing for 120s, then transferring into isopropanol for fixing for 60s, and finally drying by using a nitrogen gun.
V, electron beam evaporation: fixing a square substrate sample on a tray, hanging upside down above an electron beam evaporation chamber, enabling a photoetching surface to face downwards, adding metal chromium, turning on electron beam voltage and a gun filament after preparation is finished, depositing a chromium connecting layer after the current required by evaporation is achieved, cooling to room temperature after the current is finished, and finally replacing gold wires to carry out electron beam evaporation of a gold film, wherein the chromium connecting layer is used for improving the adsorption force of the gold film and the surface of a substrate.
VI, stripping: and (3) putting the sample deposited with the gold electrode into an acetone solution for stripping the photoresist, putting the sample into an isopropanol solution for cleaning after the stripping is finished, blowing the sample to be dry by using nitrogen, and finally putting the sample into a baking oven at the temperature of 90 ℃ for drying to finish the stripping.
VII, sputtering: and sputtering and depositing an aluminum oxide layer in the developed pattern to be used as a later electrode sacrificial layer material.
VIII transfer: soaking the substrate obtained in the last step in APTES liquid (a mixed liquid of 3-aminopropyltriethoxysilane and isopropanol) for 60 minutes, taking out the substrate, cleaning residual impurities, placing the substrate in carbon nanotube dispersion liquid with a prepared concentration, soaking for 12 hours, washing residual impurities, and drying with nitrogen for later use.
IX stripping: and soaking the prepared substrate in a hydrochloric acid solution for 15 seconds, taking out, cleaning with deionized water, and drying with nitrogen for later use.
On the basis of the preparation of a nano-gap channel electron source, in order to reduce the voltage of a collector, the power consumption of the whole device is reduced. The graphene grid structure design is added, so that the emission of an electron beam perpendicular to the plane where the emitter and the extraction electrode are located is realized, the electron emission probability of the extraction electrode is reduced, the thickness value of the insulating layer is one order of magnitude greater than the length of the channel, and the direct emission of electrons of the extraction electrode material can be avoided under the grid voltage. The related preparation process is based on the preparation process of the vacuum channel nanometer gap structure, a thin film growth process and an etching process are combined, a grid hole structure is prepared above a channel, in order to optimize the beam performance of an electron beam, graphene can be selected to cover the grid hole, the size of the grid hole is reduced, the distortion of an electric field at the grid hole is reduced, and therefore the purpose of optimizing the beam of the electron beam is achieved.
The specific preparation process is shown in figure 6. On the basis of the prepared nano gap structure, the preparation process is continued as follows:
a. and (3) thin film deposition: on the nano gap structure, an insulating layer (silicon oxide, etc.) is grown by adopting a plasma enhanced chemical vapor deposition method, and then a layer of metal is deposited to be used as a conductive layer.
b. Wet etching: and removing the silicon oxide grown on the channel by means of hydrofluoric acid solution.
c. Transferring: and transferring the graphene film onto the metal hole, wherein the aperture of the gate hole is not larger than 5 um.
Claims (10)
1. A nanometer gap electron source is characterized in that the nanometer gap electron source comprises a substrate (1), a dielectric layer (2), an electron emitter (3), a grid (4) for controlling electron emission, an insulating layer (5), an electron extraction electrode (6), an electron optical system (7) for controlling characteristics such as electron focusing, a collector (8) and a nanometer gap channel (9); the structure is as follows: the electron focusing device is characterized in that a dielectric layer (2) is arranged on the upper surface of a substrate (1), an electron emitter (3) and a grid (4) for controlling electron emission are arranged on the upper surface of the dielectric layer (2), the distance between the electron emitter (3) and the grid (4) for controlling electron emission is smaller than 500 nanometers, an insulating layer (5) is arranged on the upper surfaces of the electron emitter (3) and the grid (4) for controlling electron emission, an electron extraction electrode (6) with an electron extraction hole is covered on the upper surface of the insulating layer (5), an electron optical system (7) for controlling characteristics such as electron focusing is arranged above the electron extraction electrode (6) with the electron extraction hole, and a collector (8) is arranged above the electron optical system (7) for controlling characteristics such as electron focusing.
2. The nanogap electron source according to claim 1, wherein said electron emitter (3) is made of a conductive metal or semiconductor material, and has an end portion formed in a shape of flat, round, pointed cone, or a combination thereof, so that electrons are emitted into said nanogap channel by said grid electrode.
3. The nanogap electron source as claimed in claim 1, wherein the grid (4) for controlling electron emission is made of a metal or semiconductor material with good conductivity, and in order to prevent the grid from emitting electrons under the action of the electron extracting electrode (6), a high work function conductive material is used, or a high work function material or a dielectric layer thin film is formed on the surface of the grid (4) for controlling electron emission to reduce self electron emission.
4. The nanogap electron source according to claim 1, wherein the electron extraction electrode (6) is located above the plane of the nanogap channel (9), the nanogap channel (9) is separated from the electron extraction electrode (6) by an insulating layer (5), and a circular hole of the electron extraction electrode (6) is formed in a single or array film hole shape at a position corresponding to the nanogap channel (9), electrons emitted from the electron emitter (3) are deflected toward the electron extraction electrode (6) by a voltage applied to the electron extraction electrode (6), and are introduced into the electron optical system (7) through an extraction electrode hole of the electron extraction electrode (6), and the circular hole of the electron extraction electrode (6) serves as an electron extraction channel.
5. The nanogap electron source according to claim 1 or 4, wherein the electron extracting electrode (6) is formed by using a circular hole formed in a metal layer as an electron extracting channel, or a material having a mesh structure with an electron channel.
6. The nanogap electron source according to claim 1, wherein the nanogap channels (9) are spatially arranged to form differently shaped arrays having large electron emission currents for use in different applications.
7. The nanogap electron source according to claim 1, wherein the dielectric layer (2) and the insulating layer (5) are made of silicon oxide, zirconium oxide, aluminum oxide, hafnium oxide, silicon nitride or gallium nitride.
8. The nanogap electron source according to claim 1, wherein the electron emitter (3) is made of a metal or two-dimensional nanomaterial having a low work function, good chemical stability, and excellent electrical conductivity.
9. A method for preparing a nanogap electron source according to claim 1, wherein the preparation process comprises the following steps:
step 1: preparing a dielectric layer; and preparing an oxide layer material on the polished heavily doped silicon wafer by utilizing an atomic layer deposition process.
And 2, step: preparing a patterned electrode; designing the shape of the electrode by means of an exposure process; preparing a desired electrode pattern on a silicon substrate;
and step 3: preparing an electrode; magnetron sputtering, electron beam evaporation or evaporation process is adopted; on the basis of step 2, filling the electrode pattern with a required electrode material;
and 4, step 4: preparing an emitter and a grid; adopting a thermal chemical vapor deposition method or a transfer method; on the basis of the step 3, transferring a material with low work function at the tip of the electron emitter, and obtaining the regular tip of the electron emitter (3) and a corresponding grid electrode (4) structure for controlling electron emission by adopting a stripping method after the preparation is finished;
and 5: preparing an insulating layer; on the basis of the step 4, depositing oxide insulating layers on the surfaces of the electron emitter (3) and the grid (4) for controlling electron emission by utilizing an atomic layer deposition and magnetron sputtering process;
and 6: preparing an extraction electrode; an alignment process and a film process are combined, a hole is reserved right above the nanometer gap channel (9), and the insulating layer (5) and the electron extraction electrode (6) are sequentially prepared;
and 7: preparing an electron extraction electrode mesh; on the basis of the step 5, covering a graphene film on the surface of a reserved round hole of the electron extraction electrode (6) in a mode of transferring the graphene film to form a graphene mesh;
and 8: the matched electron optical system and the electron extraction electrode are assembled; assembling the structure prepared in steps 1 to 7, an electron optical system (7) for controlling the characteristics of electron focusing, and a collector (8) using a finishing mold.
10. A method for preparing the nanogap electron source according to claim 1, wherein the method comprises the following steps:
step 1: preparing a dielectric layer, namely preparing the dielectric layer on the polished heavily doped silicon wafer by utilizing a plasma enhanced chemical vapor deposition method or an atomic layer deposition process;
step 2: preparing an electron emitter and a grid, namely preparing the electron emitter (3) and the grid (4) on the surface of the insulating layer (5) in sequence, and etching a required nano gap channel (9) by using an electron beam direct writing or focused ion beam exposure technology;
and 3, step 3: preparing an insulating layer, namely preparing an oxide insulating layer (5) by utilizing atomic layer deposition;
and 4, step 4: preparing an electron extraction electrode (6), reserving a hole right above the nano-gap channel (9) by combining an alignment process and a film process, and sequentially preparing an insulating layer (5) and the electron extraction electrode;
and 5: preparing a mesh of the electron extraction electrode, namely covering a graphene film on the surface of a reserved round hole of the electron extraction electrode by adopting a graphene film transfer mode on the basis of the step 5 to form a graphene mesh;
step 6: and (3) assembling a matched electronic optical system and a collector, and assembling the electronic lens and the structure prepared in the steps 1 to 5 by using a finishing die.
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| CN110310873A (en) * | 2019-06-25 | 2019-10-08 | 东南大学 | A kind of vertical-type nano gap evacuated transistor of extended grid structure and preparation method thereof |
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| CN110310873A (en) * | 2019-06-25 | 2019-10-08 | 东南大学 | A kind of vertical-type nano gap evacuated transistor of extended grid structure and preparation method thereof |
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