CN113793789B - Side anode vacuum channel nanometer gap triode and preparation method thereof - Google Patents
Side anode vacuum channel nanometer gap triode and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J21/00—Vacuum tubes
- H01J21/02—Tubes with a single discharge path
- H01J21/06—Tubes with a single discharge path having electrostatic control means only
- H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/02—Electron-emitting electrodes; Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/28—Non-electron-emitting electrodes; Screens
- H01J19/32—Anodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/28—Non-electron-emitting electrodes; Screens
- H01J19/38—Control electrodes, e.g. grid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
Abstract
The invention discloses a side anode vacuum channel nanometer gap triode and a preparation method thereof, wherein the nanometer gap triode comprises a cathode, an anode, a grid electrode and an oxide insulating layer; the nanogap means that the distance between the anode and the gate electrode is maintained within 300 nm; the nanometer gap triode is characterized in that the device has similar electrical characteristics to a traditional field effect transistor, electrons are transported in a ballistic transport or tunneling mode inside a vacuum channel, and the driving voltage is smaller than the first ionization potential of molecules because the vacuum channel is smaller than/close to the average free path of the electrons in the air, so that the device can work normally without strict vacuum encapsulation. The structure is intended to break through the technical bottleneck of the traditional electric vacuum device, and is combined with the existing semiconductor processing technology to obtain a miniaturized and integrated vacuum nano electronic device so as to obtain the technical advantages of high frequency, quick response and no need of strict vacuum packaging, and has higher application potential in novel electronic components.
Description
Technical Field
The invention relates to a side anode vacuum channel nanometer gap triode and a preparation method thereof, belonging to the field of novel vacuum micro-nano structures and field emission devices.
Background
The vacuum electronic device has the technical advantages of high power, wide frequency band, high frequency and the like, and is widely applied to the technical fields of communication, radar, navigation, imaging and the like. However, due to complicated machining, the conventional vacuum electronic system is often bulky and difficult to be miniaturized, light and integrated. The development of nano technology, whether advanced processing technology or the appearance of novel nano materials, provides possibility for breaking through the bottleneck of the traditional vacuum electronic device. In recent years, the advent of nanogap structures has infused vacuum nanoelectronics with new viability.
The nano gap is an electron transport channel in vacuum, the average size of the gap is smaller than the average free path of electrons in a medium or vacuum, and the electrons are not interfered by factors such as scattering and the like in the nano gap. On the other hand, the electron transport mode in the nanogap satisfies the field electron emission, i.e., when the voltage applied between the anode is large, the barrier width of the cathode surface is reduced, and free electrons can be released from the cathode through the quantum effect of barrier penetration. The nanometer gap vacuum triode has wide frequency band, high work frequency and fast response, and is integrated with solid state device, and has reduced size and power consumption.
Disclosure of Invention
The novel triode based on the nano-gap channel structure can be widely applied to the fields of vacuum nano-electronic devices, optoelectronic devices and the like, and with the rapid development of science and technology, the performance and the requirements of the devices are continuously improved, so that effective and proper preparation processes are developed, the electrical performance and the internal transport mechanism of the nano-gap structure are explored, the application field of the novel triode is widened, and the novel device structure with high integration is constructed on the basis to meet the requirements of the era.
The invention adopts the following technical scheme for solving the technical problems:
the invention provides a vacuum side anode channel nanometer gap triode structure, which is characterized in that: and a cathode and a grid electrode on the same straight line are manufactured by adopting conductive materials on an insulating substrate material, a gap within 300 nanometers is kept between the cathode and the grid electrode, and an anode electrode is arranged on one side of a gap area in the direction perpendicular to the straight line of the cathode and the grid electrode. When the grid electrode is applied with a modulation voltage higher than that of the cathode electrode, the cathode electrode can emit electrons by adjusting the grid electrode modulation voltage; the voltage higher than the cathode is arranged on the anode, and the anode voltage is adjusted, so that electrons emitted by the cathode can be partially or completely beaten on the anode under the action of the anode voltage, thereby forming the triode structure of the nano-gap device with controllable current.
As a further technical scheme of the invention, in order to enable electrons emitted by more cathodes to be utilized by the anode under the action of anode voltage, the cathodes can be made into a tip structure, the field enhancement factor of the cathodes can be improved, the electron emission probability of the cathodes can be enhanced, so that electrons are easier to emit from the cathodes, and electrons emitted by the cathodes can reach the anode under the action of anode voltage more easily.
As a further technical scheme of the invention, the cathode and the grid electrode are in a pair of tip shapes, which is more beneficial for electrons to reach the anode under the action of anode voltage.
As a further technical scheme of the present invention, the anode is characterized in that: according to the shapes of the cathode and the grid, the end parts can be made into flat, round, pointed cone and the combination of the flat, round and pointed cone, the field enhancement factor of the cathode can be improved, the electron emission probability of the cathode can be enhanced, electrons can be emitted from the cathode more easily, and the electrons emitted from the cathode can reach the anode more easily under the action of anode voltage.
As a further technical scheme of the present invention, the spatial structures of the cathode, the grid and the anode are as follows: the shape of the gap between the electrodes is V-shaped or Y-shaped, and can be prepared by etching processes such as focused ion beam etching and the like without a mask (mask-free) to simplify the manufacturing process.
As a further technical scheme of the present invention, the spatial structures of the cathode, the grid and the anode are characterized in that: on the other side of the anode where the cathode and the grid are provided, a backup anode is provided, and the shape of the gap portion between the four electrodes is X-shaped. The backup anode can enhance the surface electric field intensity of the whole cathode and the grid electrode area, reduce the starting voltage, and improve the efficiency of collecting electrons by the anode so as to increase the current density.
As a further technical scheme of the invention, the electrode and gap manufacturing can manufacture a cathode, grid and anode patterned conductive electrode structure through traditional semiconductor manufacturing processes such as film plating, etching, electron beam lithography, focused ion beam and the like, and is characterized in that: a process is used to ensure that the gap between the cathode and the gate is within 300 nanometers.
As a further technical solution of the present invention, the gap area between the cathode, the gate and the anode is characterized in that: the gap and nearby base materials are removed by wet method, dry method, focused ion beam etching and other methods, so that electrons can be directly emitted from a cathode to an anode, collision with a substrate is avoided, the effect of electrons and the surface of the base is reduced, and phonon scattering and charge conduction on the surface of the base are reduced.
As a further technical scheme of the invention, the cathode, the grid and the anode are made of semiconductor or metal materials, and can be prepared by thin film deposition and other processes; the cathode material can also be a low-dimensional nano material, and can be prepared by processes such as transfer, screen printing or growth, etc., so that the work function of the cathode emission material is reduced, and the electron emission performance of the cathode is improved.
As a further technical scheme of the invention, the semiconductor material comprises silicon, germanium, silicon carbide, gallium nitride, zinc oxide, gallium arsenide and the like, the metal material comprises gold, silver, copper, aluminum, iron, tungsten, platinum and the like and alloys formed by the gold, the silver, the copper, the aluminum, the iron, the tungsten, the platinum and the like, and the low-dimensional nanomaterial comprises graphene, carbon nano tubes, molybdenum disulfide, tungsten disulfide, zinc oxide nano wires and the like.
As a further technical scheme of the invention, the specific material of the insulating substrate is a material with high dielectric constant.
As a further technical scheme of the invention, the high dielectric constant material comprises silicon dioxide, aluminum oxide, hafnium oxide, boron nitride and the like, and the oxide insulating layer prepared by atomic layer deposition can ensure the insulating performance of the oxide insulating layer while reducing the thickness of the insulating layer, and the high dielectric constant material can effectively reduce the leakage current of the bottom insulating layer.
As a further technical scheme of the invention, a certain included angle (more than 90 degrees) is formed between the cathode and the grid, and the electrons emitted from the edge of the cathode are not completely opposite in the same straight line, so that the electrons are easy to collect by the anode, and the collection efficiency of the electrons is improved.
As a further technical scheme of the invention, the cathodes and the grids are in the same straight line and opposite to each other, but are not vertically opposite to the anodes (the anodes incline to an included angle smaller than 90 degrees relative to the central axis between the cathodes and the grids), so that electrons emitted from the edges of the cathodes are easy to collect by the anodes, and the collection efficiency of the electrons is improved.
As a further aspect of the present invention, the anode is closer to the cathode, i.e. the distance between the anode and the cathode should be smaller than the distance between the anode and the gate, so that electrons emitted from the cathode are more easily collected by the anode than are intercepted by the gate.
As a further technical scheme of the invention, the preparation method of the vacuum channel nano-gap triode structure comprises the following steps:
step 1: sequentially ultrasonically cleaning a silicon wafer by using acetone, isopropanol and deionized water, and blow-drying the surface of the silicon wafer by using nitrogen; depositing an oxide insulating layer on the polished surface by magnetron sputtering;
step 2: spin-coating photoresist, and exposing a preset pattern area on the surface of a sample by using an electron beam lithography method;
step 3: after developing the mixed solution of isopropanol and methyl isobutyl ketone, preparing a semiconductor or metal film by utilizing a film deposition process such as chemical vapor deposition or electron beam evaporation and the like to respectively serve as a cathode, an anode and a grid;
step 4: the prepared sample is put into acetone for stripping and respectively ultrasonically cleaned in isopropanol and deionized water;
step 5: removing the nano gap and nearby substrate materials by utilizing wet etching, dry etching, focused ion beam etching and other etching processes, and observing and evaluating the nano gap and nearby substrate materials by utilizing a scanning electron microscope after the process preparation is finished;
if the cathode, the anode and the grid are low-dimensional nano materials such as graphene, carbon nano tubes and the like, preparing a nano material film on the upper surface of an insulating layer in a wet transfer, screen printing or growth mode and the like, preparing a nano gap channel by utilizing processes such as electron beam lithography or focused ion beam etching and the like, and finally cleaning the prepared sample in isopropanol and deionized water respectively, wherein the process preparation is finished and is observed and evaluated by utilizing a scanning electron microscope.
Compared with the prior art, the technical scheme provided by the invention has the following technical effects:
1) Compared with the traditional back grid and side grid structure, the V-shaped, Y-shaped or X-shaped vacuum channel structure provided by the invention can effectively enhance the surface electric field intensity of the whole cathode and grid region on one hand, thereby improving the electron emission efficiency and reducing the starting voltage; on the other hand, the efficiency of collecting electrons by the anode is improved, so that the current density and the current density are increased;
2) According to the invention, the oxide insulating layer prepared by atomic layer deposition can reduce the thickness of the insulating layer and ensure the insulating property, and the aluminum oxide or hafnium oxide material with high dielectric constant can effectively reduce the leakage current of the bottom insulating layer;
3) The invention can prepare the vacuum channel with the size smaller than 50 nanometers between the cathode and the anode by utilizing focused ion beam etching, and electrons can be transported in a ballistic transport or tunneling mode under the size, thereby breaking through the technical bottleneck that the traditional electric vacuum device needs to be strictly packaged and widening the requirement and application range of the vacuum electronic device on the vacuum degree;
4) The invention compresses the dimension of the vacuum device to 300 nanometers, the device processing technology requirement is similar to that of the traditional semiconductor technology, and the complicated mechanical processing and assembly of the traditional electric vacuum device are improved. More importantly, the method provides possibility for future miniaturization and integration of vacuum components, integrated circuits and vacuum electronic systems.
5) Compared with the traditional back gate or side gate nano-gap triode, the triode structure of the invention can effectively enhance the surface electric field intensity of the whole cathode and gate region on one hand, thereby improving the electron emission efficiency and reducing the starting voltage; on the other hand, the efficiency of collecting electrons at the anode is improved, thereby increasing the current density as well as the current density.
Drawings
Fig. 1 is a schematic diagram of a conventional back gate and side gate nanogap transistor.
Fig. 2 is a schematic diagram of a process for fabricating a vacuum channel nanogap triode according to the present invention.
Figure 3 is a top view of the basic structure of a vacuum channel nanogap triode according to the invention.
Fig. 4 is a top view of a V-channel vacuum channel nanogap triode according to the present invention.
Fig. 5 is a top view of a Y-type vacuum channel nanogap triode according to the present invention.
Fig. 6 is a top view of an extended nanogap structure of an X-type vacuum channel nanogap triode according to the present invention.
Fig. 7 is a top view of a nanogap triode according to the present invention having a V-shaped channel between a cathode and an anode.
Fig. 8 is a top view of a cathode topography including flat, rounded, pointed cone, and combinations thereof.
Fig. 9 is a top view of one of the structures of the vacuum channel nanogap transistor according to the invention.
Fig. 10 is a top view of one of the structures of the vacuum channel nanogap transistor according to the invention.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present invention and are not to be construed as limiting the present invention.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or coupled. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Specific embodiments are described below in conjunction with the exemplary figures:
example 1:
fig. 2 shows a schematic diagram of a process for manufacturing a vacuum channel nanogap triode according to the present invention. Taking the cathode 2, the gate 3 and the anode 5 as metal or semiconductor materials as examples: firstly, sequentially ultrasonically cleaning a silicon wafer by using acetone, isopropanol and deionized water, and blow-drying the surface of the silicon wafer by using nitrogen; depositing an oxide insulating layer on the polished surface by magnetron sputtering; spin-coating photoresist, and exposing a preset pattern area on the surface of a sample by using an electron beam lithography method; after the mixed solution of isopropanol and methyl isobutyl ketone is developed, preparing a semiconductor or metal film by utilizing a film deposition process such as chemical vapor deposition or electron beam evaporation and the like to respectively serve as a cathode 2, a grid 3 and an anode 5; the prepared sample is put in acetone for stripping (lift-off process) and respectively ultrasonically cleaned in isopropanol and deionized water; finally, the nano gap 4 and the nearby substrate materials are removed by utilizing wet etching, dry etching, focused ion beam etching and other etching processes, and the process preparation is finished and is observed and evaluated by utilizing a scanning electron microscope.
If the cathode 2, the grid 3 and the anode 5 are low-dimensional nano materials such as graphene, carbon nano tubes and the like, preparing a nano material film on the upper surface of the insulating base material 1 by means of wet transfer, screen printing or growth and the like, preparing a nano gap 4 by utilizing processes such as electron beam lithography or focused ion beam etching and the like, and finally cleaning the prepared sample in isopropanol and deionized water respectively, wherein the process preparation is finished and the observation and evaluation are performed by utilizing a scanning electron microscope.
Example 2:
fig. 3 is a top view of a basic structure of a vacuum channel nanogap triode according to the present invention, which is characterized in that: on the insulating base material 1, a cathode 2 and a grid electrode 3 on the same straight line are made of conductive materials, a gap 4 within 300 nanometers is kept between the cathode and the anode electrode, and an anode 5 is arranged on one side of the gap area in the direction perpendicular to the straight line of the cathode and the grid electrode. When the grid electrode is applied with a modulation voltage 6 higher than the cathode electrode, the cathode electrode can emit electrons by adjusting the grid electrode modulation voltage; the voltage 7 higher than the cathode is arranged on the anode, and the anode voltage is adjusted, so that electrons emitted by the cathode can be partially or completely beaten on the anode under the action of the anode voltage, thereby forming the triode structure of the nano-gap device with controllable current. The anode 5 is closer to the cathode 2, i.e. the distance between the anode 5 and the cathode 2 should be smaller than the distance between the anode 5 and the grid 3, so that the cathode emitted electrons are more easily collected by the anode than by the grid 3.
Example 3:
fig. 4 is a top view of a V-shaped vacuum channel nanogap triode according to the invention, in which a cathode 2 and a gate 3 on the same line are formed of a conductive material on an insulating base material 1, a V-shaped gap 4 within 300nm is maintained between the cathode and the gate, and an anode 5 is provided on one side of the gap region in a direction perpendicular to the line of the cathode and the gate. When the grid electrode is applied with a modulation voltage 6 higher than the cathode electrode, the cathode electrode can emit electrons by adjusting the grid electrode modulation voltage; the voltage 7 higher than the cathode is arranged on the anode, and the anode voltage is adjusted, so that electrons emitted by the cathode can be partially or completely beaten on the anode under the action of the anode voltage, thereby forming the triode structure of the nano-gap device with controllable current. The anode 5 is closer to the cathode 2, i.e. the distance between the anode 5 and the cathode 2 should be smaller than the distance between the anode 5 and the grid 3, so that the cathode emitted electrons are more easily collected by the anode than by the grid.
Example 4:
fig. 5 is a top view of a Y-type vacuum channel nanogap triode according to the invention, in which a cathode 2 and a gate 3 on the same line are formed of a conductive material on an insulating base material 1, a Y-type gap 4 within 300nm is maintained between the cathode and the anode and between the cathode and the gate, and an anode 5 is provided on one side of the gap region in a direction perpendicular to the line between the cathode and the gate. When the grid electrode is applied with a modulation voltage 6 higher than the cathode electrode, the cathode electrode can emit electrons by adjusting the grid electrode modulation voltage; the voltage 7 higher than the cathode is arranged on the anode, and the anode voltage is adjusted, so that electrons emitted by the cathode can be partially or completely beaten on the anode under the action of the anode voltage, thereby forming the triode structure of the nano-gap device with controllable current. The anode 5 is closer to the cathode 2, i.e. the distance between the anode 5 and the cathode 2 should be smaller than the distance between the anode 5 and the grid 3, so that the cathode emitted electrons are more easily collected by the anode than by the grid.
Example 5:
FIG. 6 is a top view of an extended nano-gap structure of an X-type vacuum channel nano-gap triode according to the present invention, wherein a cathode 2 and a grid 3 on the same straight line are made of conductive materials on an insulating base material 1, an X-type gap 4 within 300 nanometers is kept between the cathode and the grid, and an anode 5 is arranged at one side of the gap region in the direction perpendicular to the straight line of the cathode and the grid; on the other side of the anode 5, a backup anode 8 is provided, and the gap between the four electrodes is X-shaped; when the grid electrode is applied with a modulation voltage 6 higher than the cathode electrode, the cathode electrode can emit electrons by adjusting the grid electrode modulation voltage; the voltage 7 higher than the cathode is arranged on the anode, and the anode voltage is adjusted, so that electrons emitted by the cathode can be partially or completely beaten on the anode under the action of the anode voltage, thereby forming the triode structure of the nano-gap device with controllable current. Anode 5 and backup anode 8 are closer to cathode 2, i.e., the distance between anode 5 and backup anode 8 and cathode 2 should be less than the distance between anode 5 and backup anode 8 and grid 3, so that cathode emitted electrons are more easily collected by the anode than by the grid.
Example 6:
fig. 7 is a top view of a nano-gap triode with V-shaped channel between cathode and anode according to the present invention, which is characterized in that: on an insulating base material 1, a cathode 2 and a grid electrode 3 on the same straight line are manufactured by adopting a conductive material, and gaps among the anode, the cathode and the grid electrode are of a V-shaped structure; the anode 5 is provided on one side of the gap region in a direction perpendicular to the cathode and gate lines. When the grid electrode is applied with a modulation voltage 6 higher than the cathode electrode, the cathode electrode can emit electrons by adjusting the grid electrode modulation voltage; the voltage 7 higher than the cathode is arranged on the anode, and the anode voltage is adjusted, so that electrons emitted by the cathode can be partially or completely beaten on the anode under the action of the anode voltage, thereby forming the triode structure of the nano-gap device with controllable current.
Example 7:
fig. 8 is a top view of a cathode topography including flat, rounded, pointed cone, and combinations thereof.
Example 8:
fig. 9 is a top view of a vacuum channel nanogap triode according to the present invention, in which an included angle of more than 90 degrees is formed between a cathode 2 and a gate 3 on an insulating substrate 1, so that electrons 9 emitted from the edge of the cathode are easily collected by an anode 5, thereby improving the collection efficiency of electrons.
Example 9:
fig. 10 is a top view of a vacuum channel nanogap triode according to the present invention, in which a cathode 2 and a gate 3 are aligned on an insulating substrate 1, but are non-vertically opposite to an anode 5 (the anode is inclined at an angle smaller than 90 degrees with respect to the central axis between the cathode and the gate), so that electrons 9 emitted from the edge of the cathode are easily collected by the anode 5, thereby improving the collection efficiency of electrons.
Claims (14)
1. A side anode vacuum channel nanometer gap triode structure is characterized in that: on an insulating base material (1), a cathode (2) and a grid electrode (3) on the same straight line are made of conductive materials, a gap (4) within 300 nanometers is kept between the cathode (2) and the grid electrode (3), and an anode (5) is arranged on one side of the gap (4) area in the direction perpendicular to the connecting line of the cathode (2) and the grid electrode (3); when the grid electrode (3) is applied with a modulation voltage (6) higher than the cathode electrode (2), the cathode electrode (2) can emit electrons by adjusting the modulation voltage of the grid electrode (3); the voltage (7) higher than the voltage (2) of the cathode (2) is arranged on the anode (5), and the voltage of the anode (5) is adjusted, so that electrons emitted by the cathode (2) can be partially or completely beaten on the anode (5) under the action of the voltage of the anode (5), and a triode structure of the nano-gap device with controllable current is formed.
2. The side anode vacuum channel nanogap triode structure according to claim 1, wherein: in order to enable more electrons emitted by the cathode (2) to be utilized by the anode (5) under the voltage of the anode (5), the cathode (2) adopts a tip structure, so that electrons emitted by the cathode (2) can more easily reach the anode (5) under the voltage of the anode (5).
3. The side anode vacuum channel nanogap triode structure according to claim 1, wherein: the cathode (2) and the grid (3) are made into a pair of circular or conical tip shapes, which is more beneficial for electrons to reach the anode (5) under the voltage action of the anode (5).
4. The side anode vacuum channel nanogap triode structure according to claim 1, wherein: the end of the anode (5) may be shaped flat, rounded, tapered, and combinations thereof, depending on the shape of the cathode (2) and the grid (3), to further facilitate electrons reaching the anode (5) between the cathode (2) and the grid (3).
5. The side anode vacuum channel nanogap triode structure according to claim 1, wherein: the shape of the gap (4) among the cathode (2), the grid (3) and the anode (5) is V-shaped or Y-shaped, so that the manufacturing process is simplified.
6. The side anode vacuum channel nanogap triode structure according to claim 1, wherein: on the other side of the cathode (2) and the grid (3) where the anode (5) is provided, a backup anode (8) is provided, and the shape of the gap portion between the four electrodes is X-shaped.
7. A side anode vacuum channel nanogap triode structure according to any one of claims 1 to 6, wherein: in order to reduce the effect of electrons on the substrate surface, the gap (4) between the cathode (2), the grid (3) and the anode (5) and the nearby substrate materials are removed by adopting a wet method, a dry method or a focused ion beam etching method.
8. A side anode vacuum channel nanogap triode structure according to any one of claims 1 to 6, wherein: the cathode (2), the grid (3) and the anode (5) are made of semiconductor materials or metal materials by a thin film deposition process; or low-dimensional nano material, which is prepared by a growth, transfer or screen printing process, and the three electrodes are made of different materials.
9. The side anode vacuum channel nanogap triode structure according to claim 8, wherein: the semiconductor material is silicon, germanium, silicon carbide, gallium nitride, zinc oxide or gallium arsenide, the metal material is gold, silver, copper, aluminum, iron, tungsten, platinum or alloys thereof, and the low-dimensional nano material is graphene, carbon nano tube, molybdenum disulfide, tungsten disulfide or zinc oxide nano wire.
10. A side anode vacuum channel nanogap triode structure according to any one of claims 1 to 6, wherein: the material of the grid electrode (3) is an emission material with high work function so as to reduce electron emission of the grid electrode and reduce grid leakage current.
11. The side anode vacuum channel nanogap triode structure according to claim 1, wherein: the substrate material (1) is specifically made of a high dielectric constant material.
12. A side anode vacuum channel nanogap triode structure according to any one of claims 1 and 11, wherein: the substrate material (1) is silicon dioxide, aluminum oxide, hafnium oxide or boron nitride.
13. The side anode vacuum channel nanogap triode structure according to claim 1, wherein: the anode (5) is closer to the cathode (2), i.e. the distance between the anode (5) and the cathode (2) should be smaller than the distance between the anode (5) and the grid (3), so that electrons emitted by the cathode (2) are more easily collected by the anode (5) than are intercepted by the grid (3).
14. The method for preparing the side anode vacuum channel nanogap triode structure according to claim 1, which is characterized in that: the method comprises the following steps:
step 1: sequentially ultrasonically cleaning a silicon wafer by using acetone, isopropanol and deionized water, and blow-drying the surface of the silicon wafer by using nitrogen; depositing an oxide insulating layer on the polished surface by magnetron sputtering;
step 2: spin-coating photoresist, and exposing a preset pattern area on the surface of a sample by using an electron beam lithography method;
step 3: after the mixed solution of isopropanol and methyl isobutyl ketone is developed, preparing a semiconductor or metal film by utilizing a chemical vapor deposition or electron beam evaporation film deposition process, wherein the semiconductor or metal film is respectively used as a cathode (2), an anode (5) and a grid (3);
step 4: the prepared sample is put into acetone for stripping and respectively ultrasonically cleaned in isopropanol and deionized water;
step 5: removing the nano gap (4) and nearby substrate materials by utilizing a wet method, a dry method or a focused ion beam etching process, and observing and evaluating the nano gap by utilizing a scanning electron microscope after the process preparation is finished;
if the cathode (2), the anode (5) and the grid (3) are made of graphene or carbon nano-tube low-dimensional nano-materials, preparing a nano-material film on the upper surface of the insulating layer in a wet transfer, screen printing or growth mode, preparing a nano-gap channel by utilizing an electron beam lithography or focused ion beam etching process, and finally cleaning the prepared sample in isopropanol and deionized water respectively, wherein the process preparation is finished and is evaluated by utilizing a scanning electron microscope.
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