CN103000495B - Manufacture method of substrate - Google Patents
Manufacture method of substrate Download PDFInfo
- Publication number
- CN103000495B CN103000495B CN201210533950.1A CN201210533950A CN103000495B CN 103000495 B CN103000495 B CN 103000495B CN 201210533950 A CN201210533950 A CN 201210533950A CN 103000495 B CN103000495 B CN 103000495B
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- overcoat
- metal level
- protective layer
- etching
- bombardment
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Abstract
The invention relates to the technical field of semiconductor machining and discloses a manufacture method of a substrate. The manufacture method includes that a protective layer is formed and processed to obtain a protective layer of a corresponding graph, and the surface of the protective layer is roughened; a metal layer is generated on the rough surface of the protective layer; and the metal layer is exposed and developed and wet-etched to compose a picture. During forming of the protective layer, the protective layer is processed, and the surface of the protective layer can be roughened. When the metal layer formed on the rough surface of the protective layer is etched, etching liquid can permeate through depressed positions on the rough surface of the protective layer, and therefore the etching liquid can etch the bottom face of the metal layer, side etching occurs, side etching can increase etching speed of the etching liquid on the metal layer, and overall yield efficiency of substrates is improved.
Description
Technical field
The present invention relates to semiconductor processing technology field, particularly a kind of base plate preparation method.
Background technology
At present, in semiconductor machining, the particularly TFT(Thin Film Transistor of liquid crystal indicator, thin-film transistor) substrate such as array base palte preparation technology in, be all the smooth surface depositing metal layers at some overcoats, then composition carried out to metal level, as exposure imaging, wet etching etc. form required figure, wet etching has good stability, the simple advantage of technique.
As shown in Figure 1; metal level 2 is deposited on the smooth surface of overcoat 1; the bottom surface of the metal level 2 of depositing homogeneous is even in the smooth surface upper density of overcoat 1; to in the wet etching process of metal level 2; first the position not having photoresist 3 to protect in metal level 2 is etched; also need to carry out crossing of appropriate time to the position of the metal level 2 having photoresist 3 to protect after etching to carve, to ensure, by needing the metal etched all to etch away in metal level 2, to obtain figure as shown in Figure 2.Because metal level 2 is deposited on the smooth surface of overcoat 1, when causing carrying out quarter, etching liquid can only be etched by the upper surface of metal and side face, and the speed of etching is comparatively slow, have impact on the output efficiency of substrate entirety.
Summary of the invention
The invention provides a kind of base plate preparation method, can produce when carrying out wet etching to the metal level above overcoat in this preparation method to bore and carve phenomenon, thus improve the etch rate of wet etching, improve the output efficiency of substrate entirety.
For achieving the above object, the invention provides following technical scheme:
A kind of base plate preparation method, comprising:
Form overcoat, overcoat is processed, makes the surface roughening of overcoat;
The rough surface of described overcoat generates metal level;
Exposure imaging is carried out to described metal level and wet etching carries out composition.
Preferably, described overcoat is by SiN
xmaterial is made, and described process overcoat specifically comprises:
Use O
2low-power bombardment is carried out on the surface of (oxygen) ion pair overcoat.
Preferably, described O
2ion pair substrate surface carries out in low-power bombardment, O
2the bombardment power of ion is 5 ~ 20KW, bombardment time 10 ~ 20s.
Preferably, described overcoat is made by organic material, describedly carries out process to overcoat and comprises:
Cleaning overcoat, and utilize far ultraviolet to irradiate air, make the O in air
2ion becomes O
3(ozone) ion, O
3the organic material on ion and overcoat surface reacts.
Preferably, described overcoat is the gate insulator of array base palte.
Preferably, described overcoat is the passivation layer of array base palte.
Preferably, described overcoat is formed on the film forming parameter testing substrate that uses in array base palte preparation process.
Base plate preparation method provided by the invention, comprising:
Form overcoat, overcoat is processed, obtains the overcoat of respective graphical, and make the surface roughening of overcoat;
The rough surface of described overcoat generates metal level;
Exposure imaging is carried out to described metal level and wet etching carries out composition.
When forming overcoat, overcoat is processed, the surface ratio of overcoat can be made more coarse, when carrying out quarter to the metal level that the rough surface of overcoat is formed, etching liquid can be permeated by the hollow place on the rough surface of overcoat, and etching liquid can be etched the bottom surface of metal level, and side etching occurs, the generation of side etching can improve the etch rate of etching liquid to metal level, and then improves the output efficiency of substrate entirety.
Accompanying drawing explanation
Fig. 1 is the structural representation in prior art after metal level exposure;
Fig. 2 be etched in prior art after structural representation;
Fig. 3 is the schematic diagram to the metal level side etching be positioned on overcoat rough surface in the embodiment of the present invention;
Fig. 4 is the flow chart of base plate preparation method provided by the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 4, the invention provides a kind of base plate preparation method, comprising:
Step S401: form overcoat 01, overcoat 01 is processed, makes the surface roughening of overcoat; The rough surface 011 of overcoat 01 as shown in Figure 3.
Step S402: generate metal level 02 on the rough surface 011 of described overcoat 01;
Step S403: exposure imaging is carried out to described metal level 02 and wet etching carries out composition.
When forming overcoat, after overcoat is processed, make the surface ratio of overcoat 01 more coarse, the rough surface 011 of overcoat 01 as shown in Figure 3, when carrying out quarter to the metal level 02 that the rough surface 011 of overcoat 01 is formed, etching liquid can be permeated by the hollow place on the rough surface 011 of overcoat 01, position a as shown in Figure 3, etching liquid can be etched the bottom surface of metal level 02, generation side etches, the generation of side etching can improve the etch rate of etching liquid to metal level 02, and then improve the output efficiency of substrate entirety.
Certainly, the preparing material and can have multiple choices of above-mentioned overcoat 01, and different according to the material of above-mentioned overcoat 01, its processing mode is also different:
Mode one: above-mentioned overcoat 01 can by SiN
xmaterial is made, and now, processing overcoat 01 of describing in step S401 specifically comprises:
Use O
2low-power bombardment is carried out on the surface of ion pair overcoat 01, thus makes the surface roughening of overcoat, obtains the rough surface 011 of overcoat 01.
Use O
2low-power bombardment is carried out on the surface of ion pair overcoat, can ensure overcoat 01 when not being subject to excessive damage by its surface roughening, O
2the hollow that ion is driven out of on the surface of overcoat 01 is even, and the degree of roughness realizing rough surface 011 reaches requirement, meets in the object excessively accelerating etch rate quarter in process to metal level 02.
Preferably, O is used in technique scheme
2when low-power bombardment is carried out on the surface of ion pair overcoat 01, O
2the bombardment power of ion is 5 ~ 20KW, bombardment time 10 ~ 20s.Be limited to the minimum startup standard of bombardment equipment, O in the technical program
2the bombardment power of ion can not lower than 5KW, and simultaneously, for ensureing that overcoat 01 is at O
2excessive damage is not subject to, O during Ions Bombardment
2the bombardment power of ion can not higher than 20KW, O
2the bombardment power of ion can be: 5KW, 7KW, 10KW, 15KW, 20KW etc., and certain bombardment time can be 10s, 12s, 15s, 17s, 20s etc., O
2the bombardment power of ion and the selection of bombardment time can be diversified, as long as at guarantee protecting film 01 not by the rough surface 011 being met degree of roughness when excessive damage, can will not enumerate here.
Mode two: above-mentioned overcoat 01 can also be made by organic material, now, processing overcoat 01 of describing in step S401 specifically comprises:
Overcoat 01 is being cleaned, and is using far ultraviolet light to irradiate air, making the O in air
2ion becomes O
3ion, O
3the organic substance on ion and overcoat 01 surface produces and reacts, and then produces coarse surface.
Concrete, in technique scheme, base plate preparation method can be applied on a variety of substrates:
Preferred version one, above-mentioned overcoat 01 can be the gate insulator of array base palte.
Preferred version two, above-mentioned overcoat 01 can also be the passivation layer of array base palte.
Therefore, according to preferred version one and preferred version two, aforesaid substrate preparation method can be applied in the preparation method of array base palte.Certainly, can also be applied in the techniques such as prepared by touch control film, prepared by color membrane substrates, repeat no more here.
Preferred version three, above-mentioned overcoat 01 can also be formed on the film forming parameter testing substrate that uses in array base palte preparation process.Film forming parameter testing substrate is used for confirming the one-tenth film parameters of each layer metal level in array base palte preparation process, and in general, film forming parameter testing substrate can through depositing metal layers repeatedly, etching in process used, to realize its maximum utilance.But, after Multiple depositions etching, the metal residue of film forming parameter testing substrate surface can be difficult to etching totally, and utilize the scheme in aforesaid substrate preparation method, coarse structure can increased by ground shield layer in a substrate, thus side etching can be produced when etching it, accelerate the speed of etching, to ensure the further raising to making glass substrate utilance.
Obviously, those skilled in the art can carry out various change and modification to the embodiment of the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (4)
1. a base plate preparation method, is characterized in that, comprising:
Form overcoat, described overcoat is processed, makes the surface roughening of described overcoat; Wherein, described overcoat is by SiN
xmaterial is made, described process specifically to comprise to overcoat use O
2low-power bombardment is carried out on the surface of ion pair overcoat, described O
2when ion pair substrate surface carries out low-power bombardment, O
2the bombardment power of ion is 5 ~ 20KW, and bombardment time is 10 ~ 20s;
The rough surface of described overcoat generates metal level;
Exposure imaging and wet etching are carried out to complete patterning processes to described metal level; Wherein, when carrying out quarter to the metal level that the rough surface of overcoat is formed, etching liquid can be permeated by the hollow place on the rough surface of overcoat, and etching liquid can be etched the bottom surface of metal level, and side etching occurs.
2. base plate preparation method according to claim 1, is characterized in that, described overcoat is the gate insulator of array base palte.
3. base plate preparation method according to claim 1, is characterized in that, described overcoat is the passivation layer of array base palte.
4. base plate preparation method according to claim 1, is characterized in that, described overcoat is formed on the film forming parameter testing substrate that uses in array base palte preparation process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533950.1A CN103000495B (en) | 2012-12-11 | 2012-12-11 | Manufacture method of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533950.1A CN103000495B (en) | 2012-12-11 | 2012-12-11 | Manufacture method of substrate |
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| Publication Number | Publication Date |
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| CN103000495A CN103000495A (en) | 2013-03-27 |
| CN103000495B true CN103000495B (en) | 2015-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210533950.1A Active CN103000495B (en) | 2012-12-11 | 2012-12-11 | Manufacture method of substrate |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157548A (en) * | 2013-05-14 | 2014-11-19 | 北儒精密股份有限公司 | Method for manufacturing flexible light-transmitting substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885511A (en) * | 2005-06-24 | 2006-12-27 | 三星电子株式会社 | Thin film transistor substrate and method of manufacturing the same |
| CN101098588A (en) * | 2000-02-25 | 2008-01-02 | 揖斐电株式会社 | Multilayer printed circuit board |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4336774A1 (en) * | 1993-10-28 | 1995-05-04 | Bosch Gmbh Robert | Method for producing structures |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101098588A (en) * | 2000-02-25 | 2008-01-02 | 揖斐电株式会社 | Multilayer printed circuit board |
| CN1885511A (en) * | 2005-06-24 | 2006-12-27 | 三星电子株式会社 | Thin film transistor substrate and method of manufacturing the same |
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| CN103000495A (en) | 2013-03-27 |
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