CN102881586A - Method for improving flatness of contact hole subjected to tungsten chemical mechanical polishing (CMP) - Google Patents

Method for improving flatness of contact hole subjected to tungsten chemical mechanical polishing (CMP) Download PDF

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CN102881586A
CN102881586A CN2012103887588A CN201210388758A CN102881586A CN 102881586 A CN102881586 A CN 102881586A CN 2012103887588 A CN2012103887588 A CN 2012103887588A CN 201210388758 A CN201210388758 A CN 201210388758A CN 102881586 A CN102881586 A CN 102881586A
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tungsten
contact hole
chemical mechanical
mechanical polishing
method
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CN2012103887588A
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Chinese (zh)
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邓镭
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上海华力微电子有限公司
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Publication of CN102881586A publication Critical patent/CN102881586A/en

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Abstract

The invention relates to a method for improving the flatness of a contact hole subjected to tungsten chemical mechanical polishing (CMP). The method comprises the following steps of: 1, preparing a previous device and an insulation dielectric layer on a silicon substrate; 2, depositing a film barrier layer which has high polishing selectivity for tungsten metal on the contact insulation dielectric layer; 3, photoetching, and etching to form a contact hole pattern; 4, preparing a contact hole structure; and 5, obtaining flat tungsten metal contact connection. In conclusion, according to the method for improving the flatness of the contact hole subjected to tungsten CMP, the film barrier layer which has high polishing selectivity for the tungsten metal is deposited on the insulation dielectric layer, so that the defect that the tungsten metal positioned in a dense area of the contact hole structure is corroded in the CMP process is effectively overcome, the surface flatness of the tungsten metal subjected to CMP is improved, metal residues and defects in the copper CMP process are avoided when copper interconnect is formed subsequently, and product yield is improved.

Description

改善接触孔之钨化学机械研磨后平坦性的方法 The method of improving the flatness of the chemical mechanical polishing of tungsten contact hole

技术领域 FIELD

[0001] 本发明涉及半导体器件技术领域,尤其涉及一种改善接触孔之钨化学机械研磨后平坦性的方法。 [0001] The present invention relates to semiconductor device technology, and more particularly relates to a method of flatness after CMP tungsten contact hole is improved.

背景技术 Background technique

[0002] 随着超大规模集成电路的发展,集成电路的特征尺寸持续缩小,集成度越来越高,后道互连(interconnect)普遍采用立体化和多层化布线。 [0002] With the development of very large scale integrated circuits, integrated circuit feature sizes continue to shrink, increasingly high degree of integration, the interconnecting channel (Interconnect) and commonly used three-dimensional multi-layer wiring. 同时,对于130nm及以下线宽的集成电路(Integrated Circuit, IC)制造工艺,铜互连具有招不可比拟的诸多优点,成为主流互连技术。 Meanwhile, for 130nm and below a line width of the integrated circuit (Integrated Circuit, IC) manufacturing process, the copper interconnect has incomparable advantages strokes, mainstream interconnect technology.

[0003] 大马士革(Damascene)技术是实现多层铜金属互连的必要技术,包括:绝缘介质层淀积;连线槽和通孔刻蚀;防扩散金属层以及铜子晶层的淀积;电镀铜工艺;铜的化学机械抛光(Chemical Mechanical Polishing, CMP) 一系列工艺过程。 [0003] Damascus (the Damascene) technology is a necessary technology multilayer copper interconnect metal, comprising: an insulating dielectric layer is deposited; wiring grooves and the via etching; depositing a diffusion preventing metal layer and a copper seed layer; and electroplating copper process; copper CMP (chemical mechanical polishing, CMP) a series of processes. 其中,所述CMP工艺作为唯一能实现全局平坦化的技术工艺,是实现铜互连的关键技术。 Wherein said CMP process technology as the only global planarization process can be achieved, is the key technology of copper interconnects.

[0004] 请参阅图5,图5所示为铜化学机械研磨后的硅基衬底表面形貌图。 [0004] Referring to FIG. 5, FIG. 5 shows a silicon substrate surface topography after chemical mechanical polishing of copper. 显然地,在所述铜金属2的CMP过程中,因图形密度的不均匀,会在特定区域,如宽线、图形密集区,产生碟形凹陷20、侵蚀21等缺陷。 Obviously, the copper CMP process 2, due to uneven pattern density will be in a particular area, such as line width, pattern density region, dishing 20, erosion 21 and other defects. 另一方面为实现多层步线,CMP本身也对表面平坦性提出了较高的要求。 Another aspect of the multi-tier line step, CMP flatness of the surface itself also presents high requirements. 如果平坦化效果不好,则随着薄膜层数的增加,表面的不平坦度会累积,在特定区域可能在后续形成铜互连时产生金属残留。 If the flattening effect is not good, the film with the increase in the number of layers, surface flatness of not accumulate, metal residues may be generated when the subsequent formation of copper interconnects in a certain area.

[0005] 为了得到更加平坦的铜化学机械研磨后表面,通常是在布线设计时在空白区域插入虚拟图案以调节金属的密度,使其尽量一致,以此改善金属表面的平坦性,此方法在互连层的铜化学机械研磨工艺中取得良好效果。 [0005] In order to obtain more flat after the chemical mechanical polishing of copper surfaces, usually inserted in a blank area in the design of the wiring pattern is to adjust the density of the dummy metal, so far as possible uniform, thus improving the flatness of the metal surface, this method and achieved good results in the CMP process copper interconnect layer. 但是,如图6所示,图6所示为钨化学机械研磨后的硅基衬底表面形貌图。 However, as shown in Figure 6, Figure 6 shows the surface topography of the silicon substrate after chemical mechanical polishing of tungsten. 在接触通孔层为避免虚拟图案连接到闸极和有源区的金属硅化物而造成对器件特性的不利影响,一般不会在器件接触孔层插入冗余图形。 To prevent the dummy pattern connected to the metal silicide gate and an active region of the device and adversely affect the characteristics of the layer in contact vias, generally does not insert dummy patterns in the contact hole device layer. 钨3化学机械研磨的表面平坦度就不能通过设计上的优化得到保证,因此同样会产生碟形凹陷30、侵蚀31等缺陷。 3 tungsten chemical mechanical polishing the surface flatness can not be obtained by optimizing the design to ensure that, so it will also dishing 30, erosion 31 and other defects. 这种缺陷会传递到上层的金属布线层,加剧金属布线层的侵蚀缺陷,进而增大了铜化学机械研磨时铜残留的风险。 This defect will be transferred to the upper metal wiring layer, enhance erosion defective metal wiring layer, and further increases the risk of chemical mechanical polishing of copper of copper remaining.

[0006] 请参阅图7、图8,图7所示为典型的钨化学机械研磨后表面形貌的二维AFM图谱。 [0006] Referring to FIG. 7, FIG. 8, FIG. 7 shows the typical surface morphology of the two-dimensional AFM tungsten chemical mechanical polishing pattern. 图8所示为第一层铜互连在化学机械研磨后的表面形貌图。 Figure 8 is a first layer of copper interconnect surface topography after chemical mechanical polishing. 明显地,受限于接触孔33的布局设计,所述钨金属在化学机械研磨后的表面起伏,厚度差可高达1000埃。 Obviously, the contact hole is limited by the layout 33, the tungsten metal surface relief after chemical mechanical polishing, the thickness difference may be up to 1000 Angstroms. 同样地,因所述钨金属在化学机械研磨后的表面平坦性差,进而导致所述第一层铜互连在经铜金属化学机械研磨后仍有严重的金属残留40。 Likewise, because after the metal CMP of the tungsten surface flatness is poor, leading to the first layer in the copper interconnect metal by chemical mechanical polishing of copper still significant after 40 metal residues.

[0007] 故针对现有技术存在的问题,本案设计人凭借从事此行业多年的经验,积极研究改良,于是有了本发明一种改善接触孔之钨化学机械研磨后平坦性的方法。 [0007] Therefore, for the presence of the prior art, in this case by virtue of the design of experience in the industry for many years, active research and improvements, so with the present invention is a method of flatness after CMP tungsten contact hole is improved.

发明内容 SUMMARY

[0008] 本发明是针对现有技术中,传统的钨金属在化学机械研磨后的表面起伏波动大,平坦性差,进而导致铜化学机械研磨后仍有严重的金属残留、碟形凹陷、侵蚀等缺陷提供一种改善接触孔之钨化学机械研磨后平坦性的方法。 [0008] The present invention is directed to the prior art, the conventional tungsten surface after chemical mechanical polishing relief fluctuation, poor flatness, leading to the chemical mechanical polishing of copper metal residues still serious, dishing, erosion a method of providing flatness defect after chemical mechanical polishing of tungsten contact hole is improved.

[0009] 为了解决上述问题,本发明提供一种改善接触孔之钨化学机械研磨后平坦性的方法,所述方法包括: [0009] In order to solve the above problems, the present invention is to provide an improved tungsten chemical mechanical polishing flatness of the contact hole, the method comprising:

[0010] 执行步骤SI :在具有浅沟槽隔离的所述硅基衬底上制备前道器件,并淀积形成覆盖所述前道器件的绝缘介质层,所述绝缘介质层之异于所述硅基衬底的一侧经过化学机械抛光以形成平坦的接触绝缘介质层; [0010] step SI: front-channel device fabricated on a silicon substrate having shallow trench isolation, and depositing an insulating dielectric layer is formed to cover the front channel device, the insulating dielectric layer is different from the one side of said silicon substrate after chemical mechanical polishing to form a flat contact insulating dielectric layer;

[0011] 执行步骤S2 :在所述接触绝缘介质层之异于所述硅基衬底的一侧淀积对钨金属具有高研磨选择比的薄膜阻挡层; [0012] 执行步骤S3 :光刻、刻蚀所述薄膜阻挡层和所述绝缘介质层,以形成接触孔图案; [0011] step S2: contacting one side of the insulating layer of dielectric different from said silicon substrate depositing a barrier layer having a thin film of a high polishing selectivity of tungsten; [0012] step S3: lithography etching the insulating film barrier and the dielectric layer to form a contact hole pattern;

[0013] 执行步骤S4 :在所述接触孔图案中淀积所述防金属扩散层,并进行钨金属填充,以制备具有冗余钨金属的接触孔结构; [0013] step S4: depositing the contact hole pattern in the metal diffusion preventing layer, and filled with tungsten to produce a redundant structure having a contact hole of tungsten;

[0014] 执行步骤S5 :通过化学机械研磨工艺,去除所述冗余的钨金属和防金属扩散层,以获得所述平坦的钨金属接触连接。 [0014] step S5: CMP process by removing the redundancy tungsten metal diffusion prevention layer and to obtain the planar tungsten contact connection.

[0015] 可选的,所述改善接触孔之钨化学机械研磨后平坦性的方法进一步包括在形成所述平坦的钨金属接触连接后,根据实际工艺需要去除或保留所述薄膜阻挡层。 After [0015] Alternatively, the tungsten chemical mechanical polishing to improve the flatness of the contact hole the method further comprises contacting the tungsten forming the flat connection, the actual process requires removing or retaining the film barrier.

[0016] 可选的,去除所述薄膜阻挡层的方法为选择钨金属以及防金属扩散层对所述薄膜阻挡层具有高选择比的干法刻蚀或者湿法刻蚀。 [0016] Optionally, the method of removing the barrier film layer is a metal selected tungsten and an anti-diffusion layer has a dry or wet etching selection ratio of the high barrier film.

[0017] 可选的,所述薄膜阻挡层与所述绝缘介质层和所述防金属扩散层具有粘附性和绝缘性。 [0017] Optionally, the barrier layer and the insulating film layer and the dielectric layer having a diffusion preventing metal adhesion and insulating properties.

[0018] 可选的,所述薄膜阻挡层通过CVD或者PVD的方式进行淀积。 [0018] Optionally, the barrier layer is a thin film deposited by CVD or PVD manner.

[0019] 可选的,所述薄膜阻挡层为氮化硅薄膜。 [0019] Optionally, the barrier layer is a silicon nitride thin film.

[0020] 可选的,所述薄膜阻挡层的厚度优选的为50〜1000埃。 [0020] Optionally, the film thickness of the barrier layer is preferably from 50~1000 Å.

[0021] 可选的,所述前道器件为MOS器件。 [0021] Alternatively, the front-channel device is a MOS device.

[0022] 可选的,所述前道器件进一步包括设置在所述硅基衬底上的栅极金属电极、设置在所述栅极金属电极之异于所述硅基衬底一侧的栅绝缘介质层,以及分别形成在所述栅极金属电极两侧的器件侧墙。 [0022] Optionally, the device further comprising a front-gate metal electrode disposed on said silicon substrate, a gate disposed in the silicon substrate side is different from the gate electrode of said metal an insulating dielectric layer and the spacer means are formed on both sides of the metal of the gate electrode.

[0023] 综上所述,本发明所述改善接触孔之钨化学机械研磨后平坦性的方法通过在所述绝缘介质层上淀积所述对钨金属具有高研磨选择比的薄膜阻挡层,不仅有效地减小了在化学机械研磨过程中处于所述接触孔结构密集区的钨金属的侵蚀缺陷,改善了钨金属在化学机械研磨后的表面平坦性,而且避免后续形成铜互连时在铜的化学机械研磨过程中产生金属残留和缺陷,提闻广品良率。 [0023] In summary, the tungsten chemical mechanical polishing of the present invention, the contact hole by a method to improve the flatness of the dielectric layer is deposited on the insulating film having the barrier layer with a high selectivity for polishing tungsten, not only effectively reduced erosion of tungsten defects in the contact hole region of the dense structure in the chemical mechanical polishing process, tungsten in the improved chemical mechanical polishing surface flatness, and to avoid the subsequent formation of copper interconnects CMP is generated during copper metal residues and defects, provide a wide product yield smell.

附图说明 BRIEF DESCRIPTION

[0024] 图I所示为本发明改善接触孔之钨化学机械研磨后平坦性的方法的流程图; [0024] The method shown in the flowchart of FIG. I planarity after tungsten chemical mechanical polishing of the present invention improves the contact hole;

[0025] 图2所示为硅基衬底上具有前道器件、绝缘介质层和薄膜阻挡层的结构示意图; [0025] The structure shown in FIG 2 has a front-channel device, the insulating dielectric layer and the barrier layer is a thin film on a silicon substrate, a schematic view;

[0026] 图3所示为钨金属的接触孔结构示意图; [0026] FIG. 3 shows a schematic view of contact hole structure of the tungsten metal;

[0027] 图4所示为钨金属接触连接的结构示意图; [0027] Figure 4 is a tungsten metal contact connected to structural diagram;

[0028] 图5所示为铜化学机械研磨后的硅基衬底表面形貌图;[0029] 图6所示为钨化学机械研磨后的硅基衬底表面形貌图; [0028] The surface morphology shown in FIG. 5 after the chemical mechanical polishing of the silicon substrate, of copper; [0029] Figure 6 shows the chemical mechanical polishing of tungsten surface topography of the silicon substrate;

[0030] 图7所示为典型的钨化学机械研磨后表面形貌的二维AFM图谱; [0030] FIG. 7 is a surface morphology of a typical chemical mechanical polishing after the two-dimensional AFM tungsten pattern;

[0031] 图8所示为第一层铜互连在化学机械研磨后的表面形貌图。 [0031] Figure 8 is a first layer of copper interconnect surface topography after chemical mechanical polishing.

具体实施方式 Detailed ways

[0032] 为详细说明本发明创造的技术内容、构造特征、所达成目的及功效,下面将结合实施例并配合附图予以详细说明。 [0032] The teachings of the present inventions described in detail, structural features, objects and reached effect, and with reference to examples below be described in detail with the accompanying drawings.

[0033] 请参阅图1,图I所示为本发明改善接触孔之钨化学机械研磨后平坦性的方法的流程图。 [0033] Referring to FIG. 1, shown in a flowchart of FIG. I of the present method for the flatness of the contact hole, tungsten chemical mechanical polishing of the invention is improved. 所述改善接触孔之钨化学机械研磨后平坦性的方法,包括以下步骤: The flatness of tungsten chemical mechanical polishing method of the contact hole the improvement comprising the steps of:

[0034] 执行步骤SI :在具有浅沟槽隔离的所述硅基衬底上制备前道器件,并淀积形成覆盖所述前道器件的绝缘介质层,所述绝缘介质层之异于所述硅基衬底的一侧经过化学机械抛光以形成平坦的接触绝缘介质层; [0034] step SI: front-channel device fabricated on a silicon substrate having shallow trench isolation, and depositing an insulating dielectric layer is formed to cover the front channel device, the insulating dielectric layer is different from the one side of said silicon substrate after chemical mechanical polishing to form a flat contact insulating dielectric layer;

[0035] 执行步骤S2 :在所述接触绝缘介质层之异于所述硅基衬底的一侧淀积对钨金属具有高研磨选择比的薄膜阻挡层; [0035] step S2: contacting one side of the insulating layer of dielectric different from said silicon substrate depositing a barrier layer having a thin film of a high polishing selectivity of tungsten;

[0036] 执行步骤S3 :光刻、刻蚀所述薄膜阻挡层和所述绝缘介质层,以形成接触孔图案; [0036] step S3: lithography, etching the insulating film barrier and the dielectric layer to form a contact hole pattern;

[0037] 执行步骤S4 :在所述接触孔图案中淀积所述防金属扩散层,并进行钨金属填充,以制备具有冗余钨金属的接触孔结构; [0037] step S4: depositing the contact hole pattern in the metal diffusion preventing layer, and filled with tungsten to produce a redundant structure having a contact hole of tungsten;

[0038] 执行步骤S5 :通过化学机械研磨工艺,去除所述冗余的钨金属和防金属扩散层,以获得所述平坦的钨金属接触连接。 [0038] step S5: CMP process by removing the redundancy tungsten metal diffusion prevention layer and to obtain the planar tungsten contact connection.

[0039] 非限制地,在形成所述平坦的钨金属接触连接后,所述薄膜阻挡层可根据实际工艺需要进行保留或者去除。 [0039] Without limitation, after forming the flat metal contact connected to tungsten, the thin film barrier layer may need to be retained or removed according to the actual process. 其中,去除所述薄膜阻挡层的方法包括但不限于所述干法刻蚀和所述湿法刻蚀。 Wherein said film removing method barrier layer include, but are not limited to the dry etching and the wet etching.

[0040] 请参阅图2、图3、图4,并结合参阅图I,图2所示为娃基衬底上具有前道器件、绝缘介质层和薄膜阻挡层的结构示意图。 [0040] Please refer to FIGS. 2, 3, 4, and Referring to FIG I, as shown in FIG. 2 a schematic structure of the front-channel device, the insulating dielectric layer and the barrier layer is a thin film on a base substrate having a baby. 图3所示为钨金属的接触孔结构示意图。 Figure 3 shows a schematic view of contact hole structure of the tungsten metal. 图4所示为钨金属接触连接的结构示意图。 Figure 4 shows the connection of tungsten metal contact structure diagram. 作为本发明的具体实施方式,不烦列举所述前道器件为MOS器件进行阐述。 As a specific embodiment of the present invention, include not bother the front-channel device is a MOS device are set forth. 显然地,所述前道器件的类型仅为列举,不应视为对本专利技术方案的限制。 Obviously, the front channel type device include only and should not be construed as limiting the technical solution of this patent. 本发明所述平坦的钨金属接触连接的制备方法,包括以下步骤: Preparation of tungsten metal contact of the connector of the present invention is planar, comprising the steps of:

[0041] 执行步骤SI :在具有浅沟槽隔离10的所述硅基衬底11上制备前道器件12,并淀积形成覆盖所述前道器件12的绝缘介质层13,所述绝缘介质层13之异于所述硅基衬底11的一侧经过化学机械抛光以形成平坦的接触绝缘介质层131 ; [0041] step SI: In 13, the dielectric 12 on the front-channel device 11 was prepared, and the front-covering depositing device having the insulating dielectric layer 12 of the silicon substrate, shallow trench isolation 10 side of the silicon substrate 11 through the layer 13 is different from the chemical mechanical polishing to form a flat contact insulating dielectric layer 131;

[0042] 作为本发明的具体实施方式,列举地,所述前道器件12为MOS器件。 [0042] As a specific embodiment of the present invention, include, the front-channel device 12 is a MOS device. 所述前道器件12进一步包括设置在所述硅基衬底11上的栅极金属电极121、设置在所述栅极金属电极121之异于所述硅基衬底11 一侧的栅绝缘介质层122,以及分别形成在所述栅极金属电极121两侧的器件侧墙123。 The device 12 further comprises a front-gate dielectric disposed on the metal gate electrode 121 on the silicon substrate 11, 11 is provided on one side of the silicon substrate 121 is different from the metal of the gate electrode layer 122, and spacer means are formed on the both sides of the gate metal electrode 121 123.

[0043] 执行步骤S2 :在所述接触绝缘介质层131之异于所述硅基衬底11的一侧淀积对钨金属具有高研磨选择比的薄膜阻挡层14 ;其中,所述薄膜阻挡层14与所述绝缘介质层13和所述防金属扩散层(未图示)具有良好的粘附性和绝缘性。 [0043] step S2: one side of the silicon substrate 131 is different from the insulating dielectric layer 11 contacting the deposited film barrier 14 has a high polishing selectivity of tungsten; wherein said barrier film dielectric layer 14 and the insulating layer 13 and the diffusion preventing metal layer (not shown) having good adhesion and insulating properties. 所述薄膜阻挡层14可通过CVD或者PVD的方式进行淀积。 The thin barrier layer 14 may be deposited by CVD or PVD manner. 作为本发明的优选方案,所述薄膜阻挡层14为氮化硅薄膜。 As a preferred embodiment of the present invention, the thin film barrier layer 14 is a silicon nitride film. 所述薄膜阻挡层14的厚度优选的为50〜1000埃。 The film thickness of the barrier layer is preferably 14 Å is 50~1000. [0044] 执行步骤S3 :光刻、刻蚀所述薄膜阻挡层14和所述绝缘介质层13,以形成接触孔图案(未图示); [0044] step S3: lithography, etching the barrier film 14 and the insulating dielectric layer 13, patterned to form contact holes (not shown);

[0045] 执行步骤S4 :在所述接触孔图案中淀积所述防金属扩散层,并进行钨金属15填充,以制备具有冗余钨金属的接触孔结构16 ; [0045] The step S4: depositing the contact hole pattern in the metal diffusion prevention layer 15 and filled with tungsten to produce a redundant structure having a contact hole 16 is tungsten;

[0046] 执行步骤S5 :通过化学机械研磨工艺,去除所述冗余的钨金属15和防金属扩散层,以获得所述平坦的钨金属接触连接17。 [0046] step S5: CMP process by removing the redundant tungsten metal layer 15 and the diffusion preventing metal to obtain the planar tungsten contact connection 17.

[0047] 非限制地,在形成所述平坦的钨金属接触连接17后,所述薄膜阻挡层14可根据实际工艺需要进行保留或者去除。 [0047] After limitation, tungsten metal contact 17 is connected to the flat form, the film barrier 14 may need to be retained or removed in accordance with the actual process. 其中,去除所述薄膜阻挡层14的方法包括但不限于所述干法刻蚀和所述湿法刻蚀。 The method wherein removing the barrier film layer 14 include, but are not limited to the dry etching and the wet etching. 具体地,去除所述薄膜阻挡层14的方法可以为选择钨金属I 5以及防金属扩散层对所述薄膜阻挡层14具有高选择比的干法刻蚀或者湿法刻蚀。 In particular, the method of removing the barrier film layer 14 and an anti-I 5 may be a metal diffusion barrier layer of the thin film layer 14 having a high selective dry or wet etching to select a metal ratio of tungsten.

[0048] 显然地,本发明所述改善接触孔之钨化学机械研磨后平坦性的方法通过在所述绝缘介质层13上淀积所述对钨金属具有高研磨选择比的薄膜阻挡层14,从而有效地减小了在化学机械研磨过程中处于所述接触孔结构16密集区的钨金属15的侵蚀缺陷,改善了钨金属I 5在化学机械研磨后的表面平坦性,避免后续形成铜互连时在铜的化学机械研磨过程中产生金属残留和缺陷。 After [0048] Clearly, the present invention is a tungsten chemical mechanical polishing to improve the flatness of the contact hole by a method on the insulating layer 13 is deposited the dielectric barrier layer 14 having a film high polishing selectivity of tungsten, thus effectively reducing the density of the tungsten in the region of the contact hole 16 in the structure of the chemical mechanical polishing during erosion of the defect 15, I 5 tungsten improves flatness of the surface after chemical mechanical polishing, and avoid subsequent formation of copper and even when generating metal residues and defects during chemical mechanical polishing of copper.

[0049] 综上所述,本发明所述改善接触孔之钨化学机械研磨后平坦性的方法通过在所述绝缘介质层上淀积所述对钨金属具有高研磨选择比的薄膜阻挡层,不仅有效地减小了在化学机械研磨过程中处于所述接触孔结构密集区的钨金属的侵蚀缺陷,改善了钨金属在化学机械研磨后的表面平坦性,而且避免后续形成铜互连时在铜的化学机械研磨过程中产生金属残留和缺陷,提闻广品良率。 [0049] In summary, the tungsten chemical mechanical polishing of the present invention, the contact hole by a method to improve the flatness of the dielectric layer is deposited on the insulating film having the barrier layer with a high selectivity for polishing tungsten, not only effectively reduced erosion of tungsten defects in the contact hole region of the dense structure in the chemical mechanical polishing process, tungsten in the improved chemical mechanical polishing surface flatness, and to avoid the subsequent formation of copper interconnects CMP is generated during copper metal residues and defects, provide a wide product yield smell.

[0050] 本领域技术人员均应了解,在不脱离本发明的精神或范围的情况下,可以对本发明进行各种修改和变型。 [0050] Those skilled in the art should understand, without departing from the spirit or scope of the invention, various modifications and variations of the present invention. 因而,如果任何修改或变型落入所附权利要求书及等同物的保护范围内时,认为本发明涵盖这些修改和变型。 Thus, if any changes or modifications fall within the appended claims and equivalents thereof within the scope that the present invention cover such modifications and variations.

Claims (9)

1. 一种改善接触孔之钨化学机械研磨后平坦性的方法,其特征在于,所述方法包括: 执行步骤Si:在具有浅沟槽隔离的所述硅基衬底上制备前道器件,并淀积形成覆盖所述前道器件的绝缘介质层,所述绝缘介质层之异于所述硅基衬底的一侧经过化学机械抛光以形成平坦的接触绝缘介质层; 执行步骤S2 :在所述接触绝缘介质层之异于所述硅基衬底的一侧淀积对钨金属具有高研磨选择比的薄膜阻挡层; 执行步骤S3 :光刻、刻蚀所述薄膜阻挡层和所述绝缘介质层,以形成接触孔图案; 执行步骤S4 :在所述接触孔图案中淀积所述防金属扩散层,并进行钨金属填充,以制备具有冗余钨金属的接触孔结构; 执行步骤S5 :通过化学机械研磨工艺,去除所述冗余的钨金属和防金属扩散层,以获得所述平坦的钨金属接触连接。 1. A method of flatness of tungsten chemical mechanical polishing to improve contact hole, wherein, said method comprising: a step Si: front-channel device fabricated on a silicon substrate having shallow trench isolation, and depositing an insulating dielectric layer is formed to cover the front channel device, the insulating dielectric layer is different from the one side of the silicon substrate is subjected to chemical mechanical polishing to form a flat contact insulating dielectric layer; step S2: in the contact dielectric layer is different from the one side of the silicon substrate having a thin film barrier layer deposited high polishing selectivity of tungsten; step S3: lithography, etching the barrier layer and the film an insulating dielectric layer to form a contact hole pattern; step S4: depositing the diffusion preventing metal layer in the contact hole pattern, and filled with tungsten to produce a redundant structure having a contact hole of tungsten; step S5: CMP process by removing the redundancy tungsten metal diffusion prevention layer and to obtain the planar tungsten contact connection.
2.如权利要求I所述的改善接触孔之钨化学机械研磨后平坦性的方法,其特征在于,所述改善接触孔之钨化学机械研磨后平坦性的方法进一步包括在形成所述平坦的钨金属接触连接后,根据实际工艺需要去除或保留所述薄膜阻挡层。 2. The method of flatness of the chemical mechanical polishing of tungsten as improved contact hole according to claim I, wherein the method of improving the flatness of the chemical mechanical polishing of tungsten further comprising a contact hole formed in said flat after the tungsten contact connection, the actual process requires removing or retaining the film barrier.
3.如权利要求2所述的改善接触孔之钨化学机械研磨后平坦性的方法,其特征在于,去除所述薄膜阻挡层的方法为选择钨金属以及防金属扩散层对所述薄膜阻挡层具有高选择比的干法刻蚀或者湿法刻蚀。 3. The method of flatness, such as tungsten chemical mechanical polishing to improve the contact hole as claimed in claim 2, wherein removing the film barrier layer is a method of selecting tungsten metal layer and the metal diffusion prevention film barrier having a dry or wet etching selection ratio higher.
4.如权利要求I所述的改善接触孔之钨化学机械研磨后平坦性的方法,其特征在于,所述薄膜阻挡层与所述绝缘介质层和所述防金属扩散层具有粘附性和绝缘性。 4. The method of flatness of the tungsten chemical mechanical polishing to improve contact hole after claim I, wherein said barrier film layer and the insulating dielectric layer and the diffusion preventing metal layer having adhesiveness and insulation.
5.如权利要求4所述的改善接触孔之钨化学机械研磨后平坦性的方法,其特征在于,所述薄膜阻挡层通过CVD或者PVD的方式进行淀积。 5. The method of flatness, such as tungsten chemical mechanical polishing to improve contact hole according to claim 4, wherein said barrier layer is a thin film deposited by CVD or PVD manner.
6.如权利要求5所述的改善接触孔之钨化学机械研磨后平坦性的方法,其特征在于,所述薄膜阻挡层为氮化硅薄膜。 6. The method of flatness of the chemical mechanical polishing of tungsten as improved contact hole according to claim 5, wherein said barrier film layer is a silicon nitride film.
7.如权利要求6所述的改善接触孔之钨化学机械研磨后平坦性的方法,其特征在于,所述薄膜阻挡层的厚度优选的为50〜1000埃。 7. The method of flatness, such as tungsten chemical mechanical polishing to improve the contact hole to claim 6, wherein the film thickness of the barrier layer is preferably from 50~1000 Å.
8.如权利要求I所述的改善接触孔之钨化学机械研磨后平坦性的方法,其特征在于,所述前道器件为MOS器件。 8. The method of flatness, such as tungsten chemical mechanical polishing to improve contact hole according to claim I, wherein the front-channel device is a MOS device.
9.如权利要求8所述的改善接触孔之钨化学机械研磨后平坦性的方法,其特征在于,所述前道器件进一步包括设置在所述硅基衬底上的栅极金属电极、设置在所述栅极金属电极之异于所述硅基衬底一侧的栅绝缘介质层,以及分别形成在所述栅极金属电极两侧的器件侧墙。 9. The method of flatness, such as tungsten chemical mechanical polishing to improve the contact hole claimed in claim 8, wherein the front-channel device further includes a gate metal electrode disposed on said silicon substrate is provided the metal electrode different from the gate insulating gate dielectric layer of the silicon substrate side, and the spacers are formed in the device on both sides of the gate metal electrode.
CN2012103887588A 2012-10-12 2012-10-12 Method for improving flatness of contact hole subjected to tungsten chemical mechanical polishing (CMP) CN102881586A (en)

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