CN104317173A - Method for increasing yield of stripping technology - Google Patents
Method for increasing yield of stripping technology Download PDFInfo
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- CN104317173A CN104317173A CN201410648800.4A CN201410648800A CN104317173A CN 104317173 A CN104317173 A CN 104317173A CN 201410648800 A CN201410648800 A CN 201410648800A CN 104317173 A CN104317173 A CN 104317173A
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Abstract
The embodiment of the invention discloses a method for increasing a yield of a stripping technology. The method comprises the steps of applying photoresist on a base, exposing the photoresist applied on the base, developing a negative beveled figure on the photoresist, retaining the photoresist and a surface deposition metal layer of the base exposed after the negative beveled figure is developed after developing, covering the metal layer with an adhesive film, removing the metal layer attached to the surface of the photoresist by uncovering the adhesive film in a preset direction, and removing the photoresist. The method for increasing the yield of the stripping technology can effectively remove the metal layer on the surface of the photoresist, and the yield is increased significantly.
Description
Technical field
The present invention relates to photoetching process field, particularly relate to a kind of method improving stripping technology yield rate.
Background technology
Along with the progress of semiconductor technology, its corresponding Product Process is also at development, and stripping technology is exactly wherein a kind of important Photolithography Technology.
Photoetching is one of critical process of processing and manufacturing integrated circuit pattern structure and microstructure.So-called photoetching is exactly utilize photosensitive etch-resistant coating generation photochemical reaction, prepares the figure meeted the requirements in conjunction with caustic solution on various film or silicon, to realize making various circuit component, select doping, to form the object such as metal electrode and wiring.
Photoresist used in photoetching process is called photoresist again, it is the colloidal liquid be mixed by light-sensitive compound, matrix resin and organic solvent etc., when after the effect of light being subject to specific wavelength, its chemical constitution changes, and causes photoresist can dissolve in specific solution.
In a lithographic process, namely a kind of technique of lithographic method that replaces be stripping technology, namely our Lift-off of saying.In stripping technology, first to form litho pattern, then deposit film, finally remove photoresist with chemical reagent, now can together remove together with unwanted film.
But, in above-mentioned stripping technology, if substrate surface has step, step comparatively large regions make negative bevel, so partially thin in the thick meeting of stepped area photoresist, photoresist region partially thin in exposure process will overexposure, causes development back bevel angles to diminish; Secondly, during stepped area exposure, step part diffuse reflectance plane is large, and after also causing development, negative bevel diminishes.Form sheet metal after causing Metal deposition like this to connect in photoresist side, react because soak solution can not contact with photoresist when soaking and removing photoresist, the sordid problem of metal removal will be caused, thus reduce the yield rate of stripping technology product.
Therefore, how guaranteeing that soak solution can contact with photoresist and react, clean removal photoresist, thus effectively solve metal residual problem, is the current technical issues that need to address of those skilled in the art.
Summary of the invention
The object of this invention is to provide a kind of method improving stripping technology yield rate, effectively can solve photoresist surface metal residue problem, thus the yield rate of technique is significantly improved.
For solving the problems of the technologies described above, the invention provides following technical scheme:
Improve a method for stripping technology yield rate, be included in substrate and apply photoresist; Expose being coated in described suprabasil photoresist, the figure of negative bevel that described photoresist develops; The surface deposition metal level of the substrate exposed after the figure of the photoresist after development described substrate retained and the negative bevel that develops; Described metal level covers adhesive film; The mode opening described adhesive film along preset direction removes the metal level of the surface attachment of described photoresist; Described photoresist is removed.
Preferably, the metal level being positioned at described photoresist side covers adhesive film.
Preferably, all described metal level of deposit covers adhesive film.
Preferably, describedly open described adhesive film along preset direction and comprise: open described adhesive film along a direction.
Preferably, describedly open described adhesive film along preset direction and comprise: open described adhesive film from edge to centre.
Preferably, described adhesive film is blue film.
Preferably, described blue film is the blue film of electron level.
Preferably, described substrate is the substrate having step.
Preferably, described photoresist thickness is 2-3 times of metal layer thickness, comprises endpoint value.
Compared with prior art, technique scheme has the following advantages:
The method of the raising stripping technology yield rate that the embodiment of the present invention provides, cover adhesive film on the metal layer, and open adhesive film to paste the metal level removing photoresist surface along preset direction, due to paste film quality soft and paste remove the metal level on photoresist surface time dynamics moderate, so adopt adhesive film to remove the metal on photoresist surface.In addition, open adhesive film along preset direction, substrate and metal level Impact direction are fixed, stressed also just more stable, thus, when effectively removing the metal level on photoresist surface, can not cause damage because substrate is frangible to substrate.When the metal level on photoresist surface is removed, the area that photoresist exposes constantly increases, when soaking removal photoresist, effective contact area of photoresist and soak solution is also larger, the reaction of photoresist and soak solution is also more abundant, photoresist reacts completely, the kish of its surface attachment also will be got rid of by clean, and thus the yield rate of stripping technology is improved.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The stripping technology process flow diagram that Fig. 1 provides for a kind of embodiment of the present invention;
Effect schematic diagram after the surface deposition metal level of the photoresist that Fig. 2 provides for a kind of embodiment of the present invention and substrate;
The effect schematic diagram opening the side adhesive film of photoresist that Fig. 3 provides for a kind of embodiment of the present invention;
The effect schematic diagram opening the adhesive film on all metal levels of deposit that Fig. 4 provides for a kind of embodiment of the present invention;
Effect schematic diagram after the removal photoresist that Fig. 5 provides for a kind of embodiment of the present invention.
Embodiment
Just as described in the background section, in current stripping technology, when especially substrate surface has a step, photoresist surface metal is removed clean, reduces stripping technology yield rate.Inventor studies discovery, forms sheet metal and connects, can affect soak solution and photoresist contact reaction, make metal residual, thus stripping technology yield rate is reduced after Metal deposition in photoresist side.
On basis based on above-mentioned research, embodiments provide a kind of method improving stripping technology yield rate, the method comprises: in substrate, apply photoresist; Expose being coated in suprabasil photoresist, the figure of the negative bevel that develops on a photoresist; The surface deposition metal level of the substrate exposed after the figure of the photoresist after development substrate retained and the negative bevel that develops; Cover adhesive film on the metal layer; The mode opening adhesive film along preset direction removes the metal level of the surface attachment of photoresist; Described photoresist is removed.
The scheme that the embodiment of the present invention provides, eliminates the metal level on photoresist surface simply and effectively, soak solution and photoresist fully can be reacted, improve stripping technology yield rate.
In order to enable above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here to implement with multiple, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public concrete enforcement.
Please refer to Fig. 1, Fig. 2 and Fig. 5, the stripping technology process flow diagram that Fig. 1 provides for a kind of embodiment of the present invention; Effect schematic diagram after the surface deposition metal level of the photoresist that Fig. 2 provides for a kind of embodiment of the present invention and substrate; Effect schematic diagram after the removal photoresist that Fig. 5 provides for a kind of embodiment of the present invention.
In the first embodiment of the present invention, for there being the substrate of step to use the method improving stripping technology yield rate, the method for the raising stripping technology yield rate that the embodiment of the present invention provides is described.As shown in Figure 1, the method for raising stripping technology yield rate that the embodiment of the present invention provides comprises:
Step 110: apply photoresist on a substrate 200.As shown in Figure 2, described substrate 200 refers generally to the chips such as silicon chip, to substrate 200 be cleaned and be dried before coating photoresist, ensure the materials such as the surperficial free from dust of substrate 200, grease, water, to ensure adhesiveness and photoetching quality, then good in substrate 200 surface coating one deck adhesiveness, thickness is moderate, the uniform photoresist of thickness.
Step 120: coating photoresist is on a substrate 200 exposed, the figure of the negative bevel that develops on a photoresist.So-called exposure just refers to carries out selective light chemical reaction to photoresist, makes photoresist change the dissolubility in developer solution.So-called development is exactly dissolve the rear unwanted photoresist of exposure, and development uses developing solution dissolution photoresist usually, and the modes such as ultrasonic development in particular cases can be adopted to develop.The figure of the negative bevel of developing is exactly the figure required for finished product.
Step 130: after development in substrate 200 remaining photoresist 220 and the negative bevel that develops figure after this holistic upper surface deposit layer of metal layer of substrate 200 of exposing.Effect after deposited metal as shown in Figure 2, the upper surface deposit the first metal layer 211 of remaining photoresist 220 on a substrate 200, surface deposition the 3rd metal level 213 of the substrate 200 exposed after the figure of negative bevel that develops, the first metal layer 211 and the 3rd metal level 213 can be connected by deposit second metal level 212, second metal level 212 in the side of photoresist 220.
On first embodiment of the invention basis, the second embodiment of the present invention is described in conjunction with the method for thickness to the raising stripping technology yield rate that the embodiment of the present invention provides of the thickness of photoresist and the metal level of deposit, other parts please refer to the first embodiment, do not repeat at this.
On first embodiment of the invention basis, in second embodiment of the invention, when carrying out the method for described raising stripping technology yield rate, the thickness of the photoresist applied in substrate selected is 2-3 times of the thickness of the metal level of deposit, as long as the ratio of the thickness of the thickness of photoresist and metal level can ensure, the adhesive film in the present invention just can be relatively easy to the metal level on the surface of photoresist to get rid of.
Step 140: cover adhesive film on described metal level, described metal level comprises the first metal layer 211, second metal level 212 and the 3rd metal level 213.
On the basis of above-mentioned two embodiments, third embodiment of the invention is described for adhesive film, and other parts please refer to above-mentioned two embodiments, do not repeat at this.
In the third embodiment, the adhesive film removing the metal layers on the surface of photoresist is blue film, preferably adopts the blue film of electron level.Described blue film viscosity is moderate, and particle is fewer, and electrostatic is few, can not impact like this while the object that can reach the metal level pasting the surface of removing photoresist because of the character of adhesive film itself to the performance of substrate.
On the basis of above-mentioned first embodiment, the second embodiment and the 3rd embodiment, in following examples of the present invention, different paste positions for adhesive film are described two new embodiments, and other parts please refer to above-mentioned several embodiment, do not repeat at this.
In the fourth embodiment, the metal level of photoresist side covers one deck adhesive film respectively, in order to remove the metal level of photoresist side attachment.The object only covering adhesive film on the metal level of the side of photoresist is, use the adhesive film of small amount just can remove the metal level of the side of photoresist, save cost, simultaneously, the metal level eliminating the side of photoresist can expose the photoresist of certain area, reaches and makes soak solution contact the effect of fully reacting with photoresist.
In the 5th embodiment, on all metal levels of the surface deposition of substrate after development substrate exposed after the surface of remaining photoresist and the figure of the negative bevel that develops, (i.e. the first metal layer 211, second metal level 212 and the 3rd metal level 213) covers adhesive film, the metal level of the surface attachment of removal photoresist.The object that all metal levels of deposit cover adhesive film is, only need cover a slice adhesive film, save the stickup time.Because the 3rd metal level 213 adhesiveness contacted with substrate 200 is better, and the first metal layer 211 on the surface of photoresist 220 and the second metal level 212 poor with the adhesiveness of photoresist 220, in the process opening adhesive film, the while that second metal level 212 of the side of photoresist being removed, the first metal layer 211 of the upper surface of photoresist also can be torn off, such photoresist 220 will come out, and become greatly with the contact area of soak solution, the removal speed of photoresist accelerates.
Step 150: open described adhesive film along preset direction, removes the metal level of the surface attachment of photoresist.The object adopting adhesive film to remove the metal level of the surface attachment of photoresist is, solve the surface that metal level covers photoresist, hinder the contact of photoresist and soak solution, thus affect the reaction of photoresist and soak solution, and the metal level of photoresist side is owing to being connected with the metal level of deposit in substrate, can not come off completely because of the removal of photoresist, make the metal level on the surface of photoresist remove sordid problem.
In addition, generally be easier to fragmentation as substrate ratios such as silicon chips, paste that film quality is soft and dynamics when removing the metal level on photoresist surface of pasting is moderate, thus this physics supplementary means of metal level adopting adhesive film to remove photoresist surface is comparatively gentle, not easily substrate is impacted, even so, when adopting the metal level mode on this removal photoresist surface of adhesive film, still need according to the direction of presetting a little open adhesive film, to reach the metal level pulling apart photoresist surface and the object not damaging substrate.
Please refer to Fig. 3, the effect schematic diagram opening the side adhesive film of photoresist that Fig. 3 provides for fourth embodiment of the invention.
Described adhesive film is opened along preset direction according to the first embodiment, open the effect of the adhesive film that the metal level of the side of photoresist in the 4th embodiment covers as shown in Figure 3, after opening on the left of photoresist 220 adhesive film that second metal level 212 covers, on the left of photoresist 220, the second metal level 212 film that is stuck is got rid of.
Please refer to Fig. 4, the effect schematic diagram opening the adhesive film on all metal levels of deposit that Fig. 4 provides for fifth embodiment of the invention.
In 5th embodiment, the effect of the adhesive film that all metal levels on the surface of photoresist 220 cover is opened as shown in Figure 4 along preset direction, open in the process of photoresist 220, second metal level 212 of the side of photoresist 220 is pulled, and the first metal layer 211 of the upper surface of photoresist 220 is also torn to be got rid of.
On the basis of above-mentioned all embodiments, the new embodiment made for the different directions opening adhesive film is described, and other parts please refer to above-mentioned several embodiment, do not repeat at this.
In the sixth embodiment of the present invention, open described adhesive film along preset direction and comprise: open adhesive film along a direction.As described above, the substrate ratios such as silicon chip are easier to fragmentation, when opening adhesive film, in order to ensure not cause damage to substrate, so the mode little by little opening adhesive film along a direction from one end can be adopted to remove the metal level on the surface of photoresist.
In the seventh embodiment of the present invention, open described adhesive film along preset direction to comprise: little by little open adhesive film from edge to centre, this kind is adopted to open the mode of adhesive film, both the speed that adhesive film is opened had been accelerated, can not substrate be damaged again, also can pull the metal level on the surface of photoresist very well.
Step 160: photoresist is removed.Adopt the methods such as the soak solutions such as glue-dispenser remove photoresist to get rid of the photoresist 220 of substrate 200 surface residual, meanwhile, being attached to the metal level that the surface of photoresist 220 still remains also can the clean removing along with the removal of photoresist 220.As shown in Figure 5, the 3rd metal level 213 of the surface deposition of the substrate 200 exposed after the figure of the negative bevel that develops stays effect after photoresist removal, is the finished product after stripping technology.
In sum, the method of the raising stripping technology yield rate that the embodiment of the present invention provides, cover adhesive film on the metal layer, and open adhesive film to paste the metal level removing photoresist surface along preset direction, due to paste film quality soft and paste remove the metal level on photoresist surface time dynamics moderate, so adopt adhesive film to remove the metal on photoresist surface.In addition, open adhesive film along preset direction, substrate and metal level Impact direction are fixed, stressed also just more stable, thus, when effectively removing the metal level on photoresist surface, can not cause damage because substrate is frangible to substrate.When the metal level on photoresist surface is removed, the area that photoresist exposes constantly increases, when soaking removal photoresist, effective contact area of photoresist and soak solution is also larger, the reaction of photoresist and soak solution is also more abundant, photoresist reacts completely, the kish of its surface attachment also will be got rid of by clean, and thus the yield rate of stripping technology is improved.
Secondly, in the embodiment of the present invention, photoresist thickness is 2-3 times of metal layer thickness, comprises endpoint value, ensures such thickness proportion, and adhesive film can be made the metal level on photoresist surface can be relatively easy to paste get rid of.
Again, adopt blue film in the embodiment of the present invention, especially the blue film of electron level, moderate according to this blue film viscosity, particle is few, the character that electrostatic is few, better can reach the metal level pasting and remove photoresist surface and not damage the object of substrate.
In addition, in the method for the raising stripping technology yield rate that the embodiment of the present invention provides, only can cover adhesive film on the side metal layer of photoresist, use the adhesive film of small amount just can remove the metal level of the side of photoresist, saved cost.Also adhesive film can be covered on whole metal level, with only cover compared with adhesive film on the side metal layer of photoresist, only need cover a slice adhesive film, save the stickup time, meanwhile, also can tear off the metal level of photoresist upper surface, the area that photoresist is exposed is larger, larger with the contact area of soak solution, the reaction time is shortened.
Finally, along a direction when in the embodiment of the present invention, adhesive film is opened, simple to operate, ensure substrate stability under loading simultaneously, open adhesive film process and can not cause damage to substrate.Also little by little can open adhesive film from edge to centre when opening adhesive film, and opening along a direction compared with adhesive film, the speed opening adhesive film is accelerated.
Above a kind of method improving stripping technology yield rate provided by the present invention is described in detail.Apply specific case herein to set forth principle of the present invention and embodiment, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also carry out some improvement and modification to the present invention, these improve and modify and also fall in the protection domain of the claims in the present invention.
Claims (9)
1. improve a method for stripping technology yield rate, it is characterized in that, comprising:
Substrate applies photoresist;
Expose being coated in described suprabasil photoresist, the figure of negative bevel that described photoresist develops;
The surface deposition metal level of the substrate exposed after the figure of the photoresist after development described substrate retained and the negative bevel that develops;
Described metal level covers adhesive film;
The mode opening described adhesive film along preset direction removes the metal level of the surface attachment of described photoresist;
Described photoresist is removed.
2. the method for raising stripping technology yield rate according to claim 1, is characterized in that, the metal level being positioned at described photoresist side covers adhesive film.
3. the method for raising stripping technology yield rate according to claim 1, is characterized in that, all metal levels of deposit cover adhesive film.
4. the method for raising stripping technology yield rate according to claim 1, is characterized in that, describedly opens described adhesive film along preset direction and comprises: open described adhesive film along a direction.
5. the method for raising stripping technology yield rate according to claim 1, is characterized in that, describedly opens described adhesive film along preset direction and comprises: open described adhesive film from edge to centre.
6. the method for raising stripping technology yield rate according to claim 1, is characterized in that, described adhesive film is blue film.
7. the method for raising stripping technology yield rate according to claim 6, is characterized in that, described blue film is the blue film of electron level.
8. the method for the raising stripping technology yield rate according to any one of claim 1 to 7, is characterized in that, described substrate is the substrate having step.
9. the method for raising stripping technology yield rate according to claim 8, is characterized in that, described photoresist thickness is 2-3 times of metal layer thickness, comprises endpoint value.
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| CN106601768A (en) * | 2016-12-22 | 2017-04-26 | Tcl集团股份有限公司 | Transparent display device and preparation method therefor |
| CN112117321A (en) * | 2020-10-21 | 2020-12-22 | 维信诺科技股份有限公司 | Display panel and method for manufacturing display panel |
| CN114038952A (en) * | 2021-09-09 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Light emitting diode chip, preparation method thereof and display device |
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