CN102043327A - Forming method of photomask pattern and photomask layer - Google Patents
Forming method of photomask pattern and photomask layer Download PDFInfo
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- CN102043327A CN102043327A CN2009102041950A CN200910204195A CN102043327A CN 102043327 A CN102043327 A CN 102043327A CN 2009102041950 A CN2009102041950 A CN 2009102041950A CN 200910204195 A CN200910204195 A CN 200910204195A CN 102043327 A CN102043327 A CN 102043327A
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- layer
- photomask
- photoresist
- photoresist layer
- hydrophilic
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Abstract
The invention discloses a forming method of a photomask pattern, comprising the following steps: providing a semiconductor substrate; forming a photoresist layer on the semiconductor substrate; forming a hydrophilic layer on the photoresist layer, thus forming a photomask layer by the hydrophilic layer and the photoresist layer; utilizing a light-transmitting mask board to carry out exposure on the photomask layer; and developing the exposed photomask layer, and removing the exposed photomask layer, thus forming a photomask layer pattern. The invention also discloses a photomask layer which comprises the semiconductor substrate which is provided with the photoresist layer; and the photoresist layer is provided with the hydrophilic layer, and the hydrophilic layer and the photoresist layer form the photomask layer. Therefore, the phenomenon that the photoresist at the exposed part is left after development is reduced.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of formation method of light mask pattern and photomask layer.
Background technology
In the semiconductor device processing technology, utilize photoetching process that the mask pattern on the mask is transferred in the photoresist layer on semiconductor structure surface usually.Usually the basic technology of photoetching comprises steps such as gluing, exposure and development.The purpose of gluing is to set up thin and uniform photomask layer on the semiconductor structure surface.The purpose of exposure is to utilize exposure light source that mask pattern is transferred in the photoresist layer.Development is the patterning photoresist layer, photoresist layer exposed or the removal of unexposed zone, thereby at the surperficial photoresist layer that forms patterning of semiconductor structure.Under the sheltering of the photoresist layer of patterning, semiconductor structure is carried out etching afterwards, just mask pattern is transferred in the semiconductor structure, thereby in semiconductor structure, formed circuitous pattern.After etching, also need photoresist layer is removed.
A basic classification of dividing photoresist is its polarity.Photoresist is dipped in the developing solution after exposure.In exposure process, positive photoresist reacts by photographic chemistry, cuts off resin polymerization body main chain and from the contact between the chain, reaches to weaken polymeric purpose, so the solubleness in development treatment subsequently of the photoresist after the exposure raises.In developing process, positive photoresist exposed to the sun the zone dissolving of light must be faster, and the photoresist dissolution velocity after the exposure almost is 10 times of unexposed photoresist dissolution velocity.Ideally, unexposed zone remains unchanged.Negative photoresist is just in time opposite, and unexposed zone will be dissolved in developer, and exposed areas is retained.The resolving power of positive photoresist is best often, and therefore the application in IC makes is more popular.
For positive photoresist, after development, the photoresist of exposed portion often is not removed fully, thereby exists remaining.These remnants bring very big influence can for follow-up technology, and for example in the technological process below the 0.13um node, we will increase the shallow doping of multiple tracks usually after grid ion implantation technology improves electrically.The design rule of shallow dopant ion injection level is smaller, injects feasible electrically failure thereby photoresist remnants can stop the ion of shallow doping.
Normally, can solve the problems referred to above by prolonging exposure time or development time, development time control is improper to cause development easily but prolong, thereby caused photoresist to collapse or other defect easily.
Summary of the invention
The technical matters that the present invention solves provides a kind of formation method and photomask layer of light mask pattern, thereby after reducing to develop, there is the problem of photoresist remnants in exposure position.
In order to address the above problem, the invention provides a kind of formation method of light mask pattern, comprise step: provide the semiconductor-based end; On the semiconductor-based end, form photoresist layer; Form hydrophilic layer on described photoresist layer, described hydrophilic layer and photoresist layer constitute the photomask layer; The printing opacity mask plate exposes to described photomask layer; Photomask layer after the exposure is developed, remove the photomask layer that is exposed, form the photomask layer pattern.
Preferably, the material of described hydrophilic layer is: CH
3COCH
3
Preferably, also be included in formation top anti-reflective layer between described hydrophilic layer and the photoresist layer.
Preferably, the molecular formula of top anti-reflective layer is C
8F
17SO
3
Preferably, also be included between the described semiconductor-based end and the described photoresist layer and form bottom anti-reflection layer.
Corresponding the present invention also provides a kind of photomask layer, comprising: the semiconductor-based end; On the semiconductor-based end, has photoresist layer; Have hydrophilic layer on described photoresist layer, described hydrophilic layer and photoresist layer constitute the photomask layer.
Preferably, the material of described hydrophilic layer is: CH
3COCH
3
Preferably, also comprise top anti-reflective layer between described hydrophilic layer and photoresist layer.
Preferably, the molecular formula of top anti-reflective layer is C
8F
17SO
3
Preferably, also comprise bottom anti-reflection layer between the described semiconductor-based end and described photoresist layer.
Compared with prior art, the present invention mainly has the following advantages:
The present invention arrives thereby the photoresist layer after feasible being exposed can be developed liquid by form one deck hydrophilic layer on photoresist layer, cleans thereby be developed liquid.Therefore also influence with regard to avoiding also subsequent technique being brought because need the photoresist of removal not to be removed.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is the formation method flow diagram of light mask pattern of the present invention;
Fig. 2 to Fig. 5 is the formation method synoptic diagram of light mask pattern of the present invention.
Embodiment
Find through a large amount of experiments, thereby positive photoresist is subjected to the influence of environment easily makes the photoresist surface be alkalescent, make the surface of photoresist imaging have not water wettability, thereby make in the development after exposure, developer solution is difficult for entering by environmental pollution and is weakly alkaline zone, thereby in the feasible zone that is exposed, being subjected to environmental pollution to be weakly alkaline zone can't be developed liquid and clean, thereby making the subregion develop fails, like this after development is finished, should remove the subregion of photoresist, may just can't remove photoresist, thereby bring influence for follow-up etch step.
The invention provides a kind of formation method of light mask pattern, comprise step: the semiconductor-based end is provided; On the semiconductor-based end, form photoresist layer; Form hydrophilic layer on described photoresist layer, described hydrophilic layer and photoresist layer constitute the photomask layer; The printing opacity mask plate exposes to described photomask layer; Photomask layer after the exposure is developed, remove the photomask layer that is exposed, form the photomask layer pattern.
Preferably, the material of described hydrophilic layer is: CH
3COCH
3
Preferably, also be included in formation top anti-reflective layer between described hydrophilic layer and the photoresist layer.
Preferably, the molecular formula of top anti-reflective layer is C
8F
17SO
3
Preferably, also be included between the described semiconductor-based end and the described photoresist layer and form bottom anti-reflection layer.
Correspondingly, the present invention also provides a kind of photomask layer, comprising: the semiconductor-based end; On the semiconductor-based end, has photoresist layer; Have hydrophilic layer on described photoresist layer, described hydrophilic layer and photoresist layer constitute the photomask layer.
Preferably, the material of described hydrophilic layer is: CH
3COCH
3
Preferably, also comprise top anti-reflective layer between described hydrophilic layer and photoresist layer.
Preferably, the molecular formula of top anti-reflective layer is C
8F
17SO
3
Preferably, also comprise bottom anti-reflection layer between the described semiconductor-based end and described photoresist layer.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
Secondly, the present invention utilizes synoptic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of expression device architecture can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 1 is the formation method flow diagram of light mask pattern of the present invention, and Fig. 2 to Fig. 5 is the formation method synoptic diagram of light mask pattern of the present invention, and as shown in Figure 1, the formation method of light mask pattern of the present invention comprises step:
S10: the semiconductor-based end is provided.
As shown in Figure 2, the semiconductor-based end 100, can be the silicon or the SiGe (SiGe) of monocrystalline, polycrystalline or non crystalline structure, also can be silicon-on-insulator (SOI), can also comprise other material, for example indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide or gallium antimonide.Can also be substrate (part that comprises integrated circuit and other elements), the patterning of multi layer substrate (silicon substrate that for example, has covering dielectric and metal film), classification substrate, silicon-on-insulator substrate, epitaxial silicon substrate, section processes or the substrate that is not patterned in addition.
S20: on the semiconductor-based end 100, form photoresist layer.
As shown in Figure 3, on the semiconductor-based end 100, can utilize spin coating (spin on) technology coating photoresist layer 110, for example first instillation photoresist rotates the wafer at place, the semiconductor-based ends 100 again to the semiconductor-based end 100, thereby photoresist is evenly distributed at semiconductor-based the end 100.Described photoresist is that wavelength is the ultraviolet exposure photoresist of 248nm, and thickness can be 1500
～2000
Preferably, can also form on the semiconductor-based end 100 before forming photoresist layer 110: (thickness can be 500 to bottom anti-reflective BARC for Bottom Anti-Reflective Coating, BARC) layer 105
～4000
The effect of described bottom anti-reflection layer 105 is mainly: prevent that light from passing through to reflect at the wafer interface behind the photoresist, the light of avoiding reflecting can interfere with incident light, makes that photoresist can uniform exposure.Concrete can adopt the spin coating proceeding coating.
S30: form hydrophilic layer on described photoresist layer 110, described hydrophilic layer and photoresist layer 110 constitute the photomask layer.
As shown in Figure 3, on described photoresist layer 110, can utilize spin coating (spin on) technology coating hydrophilic layer 120.The material of hydrophilic layer 120 can be CH
3COCH
3, can also or be TiO for the material that contains hydroxy in addition
2Described hydrophilic layer 120, photoresist layer 110 can also comprise that bottom anti-reflection layer 105 constitutes photomask layer 130 together.
In the prior art, especially on the photoresist layer of 248nm UV light source exposure, usually applying coating not, but like this behind the substance reaction in photoresist layer and the environment, can generate the alkalescent material, can make that like this photoresist layer is not water wettability, thereby the developer solution that is carried by deionized water when developing after exposure is not easy to arrive not hydrophilic photoresist layer position, thereby make the photoresist after the exposure can't be developed removal, thereby bring bad influence for follow-up technology.
Utilize in the present invention at photoresist layer surface-coated hydrophilic layer, thereby make the photoresist layer possess hydrophilic property, and hydrophilic layer is a transparency material, hydrophilic layer neither can influence the light source irradiation of exposure at photoresist layer like this, make again when developing, to make developer solution, remove thereby make the photoresist layer that is exposed the position be developed the back easily with the photoresist position that arrives easily after exposing.
Preferably, can top coating antireflection (Top Anti-Reflective Coating between hydrophilic layer and photoresist layer, TARC) layer 115, thereby making both to have made photoresist layer have hydrophilic interaction, can prevent that again light from passing through to reflect at the wafer interface behind the photoresist, the light of avoiding reflecting can interfere with incident light, makes that photoresist can uniform exposure.Preferably, the molecular formula of TARC is C
8F
17SO
3
Usually on the photoresist layer of 248nm UV light source exposure, applying coating not, therefore preferred in the present invention, hydrophilic layer of the present invention also can be hydrophilic top anti-reflective layer, just on photoresist layer 110 only the coating have hydrophilic top anti-reflective layer 115, so both can make photoresist layer have hydrophilic interaction, can prevent that again light from passing through to reflect at the wafer interface behind the photoresist, the light of avoiding reflecting can interfere with incident light, makes that photoresist can uniform exposure.Preferably, the molecular formula of hydrophilic TARC is C
8F
17SO
3
S40: see through mask plate described photomask layer is exposed.
As shown in Figure 4, see through mask plate described photomask layer is exposed, have the figure of printing opacity on photomask blank, described light source sees through from the figure of described printing opacity, thereby the ad-hoc location of photomask layer is exposed.
S50: the photomask layer after the exposure 130 is developed, remove the photomask layer that is exposed, form the photomask layer pattern.
As shown in Figure 5, utilize developer solution, for example TMAH, NaOH, KOH develop to the photomask layer after the exposure 130, thereby remove the part that is exposed, because be coated with hydrophilic layer 120 at photoresist layer 110, therefore be developed easily and reach, and be developed liquid and remove.
Corresponding the present invention also provides a kind of photomask layer, comprising:
The semiconductor-based end;
On the semiconductor-based end, has photoresist layer;
Have hydrophilic layer on described photoresist layer, described hydrophilic layer and photoresist layer constitute the photomask layer.
Preferably, the material of described hydrophilic layer is: CH3COCH3.
Preferably, also be included in top anti-reflective layer between described hydrophilic layer and the photoresist layer.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (10)
1. the formation method of a light mask pattern is characterized in that, comprises step:
The semiconductor-based end, be provided;
On the semiconductor-based end, form photoresist layer;
Form hydrophilic layer on described photoresist layer, described hydrophilic layer and photoresist layer constitute the photomask layer;
The printing opacity mask plate exposes to described photomask layer;
Photomask layer after the exposure is developed, remove the photomask layer that is exposed, form the photomask layer pattern.
2. the formation method of light mask pattern according to claim 1 is characterized in that, the material of described hydrophilic layer is: CH
3COCH
3
3. the formation method of light mask pattern according to claim 1 is characterized in that, also is included in and forms the top anti-reflective layer between described hydrophilic layer and the photoresist layer.
4. the formation method of light mask pattern according to claim 3 is characterized in that, the molecular formula of top anti-reflective layer is C
8F
17SO
3
5. the formation method of light mask pattern according to claim 1 is characterized in that, also is included between the described semiconductor-based end and the described photoresist layer and forms bottom anti-reflection layer.
6. a photomask layer is characterized in that, comprising:
Be positioned at the suprabasil photoresist layer of semiconductor;
Be positioned at the hydrophilic layer on the photoresist layer.
7. photomask layer according to claim 6 is characterized in that the material of described hydrophilic layer is: CH
3COCH
3
8. photomask layer according to claim 6 is characterized in that, also comprises the top anti-reflective layer between described hydrophilic layer and photoresist layer.
9. photomask layer according to claim 8 is characterized in that the molecular formula of top anti-reflective layer is C
8F
17SO
3
10. photomask layer according to claim 6 is characterized in that, also comprises the bottom anti-reflection layer between the described semiconductor-based end and described photoresist layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102041950A CN102043327A (en) | 2009-10-19 | 2009-10-19 | Forming method of photomask pattern and photomask layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102041950A CN102043327A (en) | 2009-10-19 | 2009-10-19 | Forming method of photomask pattern and photomask layer |
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|---|---|
| CN102043327A true CN102043327A (en) | 2011-05-04 |
Family
ID=43909590
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| CN2009102041950A Pending CN102043327A (en) | 2009-10-19 | 2009-10-19 | Forming method of photomask pattern and photomask layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098002A (en) * | 2015-06-16 | 2015-11-25 | 京东方科技集团股份有限公司 | Photoresist, quantum dot layer patterning method, quantum light-emitting diode (QLED), quantum dot color film and display device |
| CN107709609A (en) * | 2015-08-19 | 2018-02-16 | 株式会社尼康 | The manufacture method of the manufacture method of wiring pattern, the manufacture method of conducting film and transistor |
-
2009
- 2009-10-19 CN CN2009102041950A patent/CN102043327A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098002A (en) * | 2015-06-16 | 2015-11-25 | 京东方科技集团股份有限公司 | Photoresist, quantum dot layer patterning method, quantum light-emitting diode (QLED), quantum dot color film and display device |
| US10386724B2 (en) | 2015-06-16 | 2019-08-20 | Boe Technology Group Co., Ltd. | Hydrophilic photoresist, patterning method of quantum dot layer and quantum dot light-emitting diode |
| CN107709609A (en) * | 2015-08-19 | 2018-02-16 | 株式会社尼康 | The manufacture method of the manufacture method of wiring pattern, the manufacture method of conducting film and transistor |
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Application publication date: 20110504 |