CN110983276A - Preparation method and preparation equipment of tantalum nitride film resistor - Google Patents
Preparation method and preparation equipment of tantalum nitride film resistor Download PDFInfo
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract
The invention discloses a preparation method and preparation equipment of a tantalum nitride film resistor, and belongs to the technical field of resistor preparation. The preparation method and the preparation equipment of the tantalum nitride film resistor comprise a vacuum chamber, a rotating device, a gas-pumping pump set, a gas supply device, a magnetic control device, a thermal resistance evaporation device, an AR ion cleaning device and an electron beam evaporation device; the vacuum chamber is ensured to be in a vacuum state by the air pump group, so that the preparation processes of AR ion rotary cleaning, tantalum nitride film resistor layer coating, titanium metal coating, noble metal coating and etching graph are all completed under the vacuum condition.
Description
Technical Field
The invention relates to the technical field of resistor preparation, in particular to a preparation method and preparation equipment of a tantalum nitride film resistor.
Background
The resistor is an indispensable electronic component of various electronic devices, and is one of the most used components in all electronic circuits. In recent years, the rapid development of electronic information technology has made new demands on electronic component technology, and resistor technology has also been developed completely, and has been developed from traditional wire-wound resistors, metal film resistors, graphite resistors, and chip thick film resistors to the current chip thin film resistors. Meanwhile, the blowout-type development of complex military environments and miniaturized consumer electronics products has required the resistors themselves to have high reliability and high adaptability since the last 21 st century. Therefore, miniaturization, high refinement, low temperature coefficient, environmental protection, and base metal have become major directions for the development of sheet resistors. The traditional thick film chip resistor is difficult to be greatly improved in the aspects of high precision, high stability and the like due to the limitation of production process and material types. In comparison, thin film chip resistor applications are the best seen, and are ideal products for replacing low-precision thick film chip resistors and other traditional lead resistors.
The tantalum nitride thin film resistor is a common thin film chip resistor, and the requirement on manufacturing equipment is high, so that the yield of the currently produced tantalum nitride thin film resistor is low, and the service life of the currently produced tantalum nitride thin film resistor cannot reach a design value.
Disclosure of Invention
The invention aims to provide a preparation method and preparation equipment of a tantalum nitride thin film resistor, and aims to solve the problems that the tantalum nitride thin film resistor produced by the traditional preparation method and preparation equipment of the tantalum nitride thin film resistor is low in yield and short in service life.
In order to solve the above technical problems, the present invention provides a method for preparing a tantalum nitride thin film resistor, comprising the following steps:
step 1: the vacuum chamber is vacuumized to 10-3-10-6Pa magnitude;
step 2: introducing argon into the vacuum chamber, and rotationally cleaning the substrate by using AR ions;
and step 3: introducing nitrogen into the vacuum chamber, and sputtering the substrate by radio frequency to coat the tantalum nitride thin film resistor layer;
and 4, step 4: sputtering a substrate by radio frequency, performing titanium metal coating on the surface of the tantalum nitride thin film resistor layer, and stopping introducing argon and nitrogen after the titanium metal coating is finished;
and 5: evaporating noble metal platinum by using an electron beam, and performing platinum metal coating on the surface of the titanium metal film;
step 6: evaporating noble metal gold through thermal resistance, and performing gold metal coating on the surface of the platinum metal film;
and 7: breaking vacuum to normal pressure after cooling, taking out the substrate after film coating from the vacuum chamber, etching the metal layer on the surface of the tantalum nitride film resistance layer, and manufacturing a PAD pattern;
and 8: carrying out primary photoresist removing, cleaning and drying;
and step 9: etching the tantalum nitride thin film resistor layer by a dry method to manufacture a resistor pattern;
step 10: and removing the photoresist, cleaning and drying again to finish the preparation of the tantalum nitride film resistor.
Optionally, in the step 2, the rotation frequency of the rotation device is set to be 2-50RPM for the substrate to be cleaned by rotation of the AR ions, the flow of the argon MFC is set to be 10-200sccm, and the cleaning time is 3-15 minutes; and cleaning foreign matters and impurities on the surface of the substrate, and increasing the adhesion of the subsequent metal film deposition.
Optionally, in the step 3, the tantalum nitride thin film resistor layer is coated, the magnetron device is controlled to raise the sputtered tantalum nitride target to a required process height of 10 CM to 100CM, the distance is 2 CM to 20CM from the umbrella stand, the angle is adjusted in advance to be parallel, the flow of argon MFC is set to 20 sccm to 200sccm, the flow of nitrogen is set to 10 sccm to 100sccm, the radio frequency power is set to 10% to 90% of the maximum power, and the thickness of the tantalum nitride thin film resistor layer is 200-.
Optionally, in the step 4, in the titanium metal coating, the magnetron device is controlled to raise the lifting rod for sputtering the titanium target to a required process height of 10-100CM, the lifting rod is 2-20CM away from the umbrella stand and parallel to the umbrella stand by adjusting the angle in advance, the flow of the argon MFC is set to 50-200sccm, the flow of the nitrogen is set to 50-100sccm, the radio frequency power is set to 10-90% of the maximum power, and the thickness of the titanium metal film is 20-500 Å.
Optionally, in the step 5 and the step 6, the precious metal platinum and the precious metal gold are respectively pre-melted and evaporated by the precious metal plating film, the pre-melting power is 10% -90% of the maximum power, the thickness of the precious metal platinum metal film is 0.1-1um, and the thickness of the precious metal gold metal film is 0.1-5 um.
Optionally, the PAD pattern is formed by etching the metal layer in step 7, the spin speed of the spin coating is set to 1000-.
Optionally, in the step 9, the tantalum nitride thin film resistor layer is dry etched, the spin speed of the spin coating is set to 1000-5000RPM, the lithography time is set to 5-30S, the development time is set to 60-240S, and the dry etching time is set to 20-600S.
The preparation equipment of the tantalum nitride film resistor is characterized by comprising a vacuum chamber, a rotating device, a gas-pumping pump set, a gas supply device, a magnetic control device, a thermal resistance evaporation device, an AR ion cleaning device and an electron beam evaporation device; the air pump set and the air supply device both penetrate through the vacuum chamber and are communicated with the inside of the vacuum chamber; the magnetic control device, the thermal resistance evaporation device, the AR ion cleaning device and the electron beam evaporation device are all fixedly connected inside the vacuum chamber.
Optionally, the rotating device is fixedly connected to the top end inside the vacuum chamber, and the rotating device can rotate in the vacuum chamber; a plurality of umbrella stands are uniformly distributed on the rotating device, and the substrate base plate is fixedly placed on the surfaces of the umbrella stands.
Optionally, an adjusting mechanism is arranged on the magnetic control device and used for adjusting the height and the angle of the magnetic control device.
The invention provides a preparation method and preparation equipment of a tantalum nitride film resistor, which comprise a vacuum chamber, a rotating device, a gas-pumping pump set, a gas supply device, a magnetic control device, a thermal resistance evaporation device, an AR ion cleaning device and an electron beam evaporation device; the vacuum chamber is ensured to be in a vacuum state by the air pump group, so that the preparation processes of AR ion rotary cleaning, tantalum nitride film resistor layer coating, titanium metal coating, noble metal coating and etching graph are all completed under the vacuum condition.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for manufacturing a TaN thin film resistor according to the present invention.
Detailed Description
The following will explain the preparation method and preparation apparatus of tantalum nitride thin film resistor in detail with reference to the drawings and the specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
The invention provides a preparation device of a tantalum nitride film resistor, which comprises a vacuum chamber 1, a rotating device 2, a gas-pumping pump group 3, a gas supply device 4, a magnetic control device 5, a thermal resistance evaporation device 6, an AR ion cleaning device 7 and an electron beam evaporation device 8, wherein the vacuum chamber 1 is provided with a vacuum chamber; the air pump set 3 and the air supply device 4 both penetrate through the vacuum chamber 1 and are communicated with the inside of the vacuum chamber; the magnetic control device 5, the thermal resistance evaporation device 6, the AR ion cleaning device 7 and the electron beam evaporation device 8 are all fixedly connected inside the vacuum chamber 1; the rotating device 2 is fixedly connected to the top end in the vacuum chamber 1, and the rotating device 2 can rotate in the vacuum chamber 1; a plurality of umbrella stands 21 are uniformly distributed on the rotating device 2, and the substrate base plate 9 is fixedly placed on the surfaces of the umbrella stands 21; the magnetic control device 5 is provided with an adjusting mechanism 51 for adjusting the height and angle of the magnetic control device 5.
The invention provides a preparation method of a tantalum nitride film resistor, which comprises the following steps:
step 1: the vacuum chamber is vacuumized to 10-3-10-6Pa magnitude;
step 2: introducing argon into the vacuum chamber, and rotationally cleaning the substrate by using AR ions;
and step 3: introducing nitrogen into the vacuum chamber, and sputtering the substrate by radio frequency to coat the tantalum nitride thin film resistor layer;
and 4, step 4: sputtering a substrate by radio frequency, performing titanium metal coating on the surface of the tantalum nitride thin film resistor layer, and stopping introducing argon and nitrogen after the titanium metal coating is finished;
and 5: evaporating noble metal platinum by using an electron beam, and performing platinum metal coating on the surface of the titanium metal film;
step 6: evaporating noble metal gold through thermal resistance, and performing gold metal coating on the surface of the platinum metal film;
and 7: breaking vacuum to normal pressure after cooling, taking out the substrate after film coating from the vacuum chamber, etching the metal layer on the surface of the tantalum nitride film resistance layer, and manufacturing a PAD pattern;
and 8: carrying out primary photoresist removing, cleaning and drying;
and step 9: etching the tantalum nitride thin film resistor layer by a dry method to manufacture a resistor pattern;
step 10: and removing the photoresist, cleaning and drying again to finish the preparation of the tantalum nitride film resistor.
Specifically, in the step 2, the rotation frequency of the rotation device is set to be 2-50RPM for the substrate of the AR ion rotation cleaning substrate, the flow of the argon MFC is set to be 10-200sccm, and the cleaning time is 3-15 minutes; and cleaning foreign matters and impurities on the surface of the substrate, and increasing the adhesion of the subsequent metal film deposition. Semiconductor characteristics determine that the manufacturing process has high dependence on production environment, so that the cleanliness requirement of a production workshop is high, and the process flow of semiconductor devices is completed in a thousand-level or even a hundred-level clean room, because impurities have the influence of changing the semiconductor characteristics or destroying the performance of the semiconductor devices. The production equipment provided by the invention is different from a mode of directly sputtering in a vacuum chamber after surface treatment, namely cleaning the substrate by using the AR ions, directly performing next sputtering deposition in the vacuum chamber after cleaning the AR ions, and further directly completing sputtering deposition of the reactive sputtering metal nitride film and the multilayer precious metal film, so that better adhesion between the deposition film and the substrate, and between the film and the film is facilitated, and the defects caused by foreign impurities are reduced.
Specifically, in the step 3, the tantalum nitride thin film resistance layer is coated, a magnetron device is controlled to enable the sputtered tantalum nitride target to rise to the required process height of 10-100CM, the distance from the umbrella stand is 2-20CM, the angle is adjusted in advance to be parallel, the flow of an argon MFC is set to be 20-200sccm, the flow of nitrogen is set to be 10-100sccm, the radio frequency power is set to be 10% -90% of the maximum power, and the thickness of the tantalum nitride thin film resistance layer is 200-5000 Å.
Specifically, in the step 4, in the titanium metal coating, the magnetic control device is controlled to raise the lifting rod for sputtering the titanium target to the required process height of 10-100CM, the lifting rod is 2-20CM away from the umbrella stand and parallel to the umbrella stand by adjusting the angle in advance, the flow of the argon MFC is set to be 50-200sccm, the flow of nitrogen is set to be 50-100sccm, the radio frequency power is set to be 10-90% of the maximum power, and the thickness of the titanium metal film is 20-500 Å.
Specifically, in the step 5 and the step 6, the precious metal platinum and the precious metal gold are respectively pre-melted and evaporated through the precious metal plated film, the pre-melting power is 10% -90% of the maximum power, the thickness of the precious metal platinum metal film is 0.1-1um, and the thickness of the precious metal gold metal film is 0.1-5 um. Since noble metals have good chemical stability, high electrical and thermal conductivity, which are indispensable materials for semiconductor microelectronics technologies, semiconductor devices are expensive to manufacture. Compared with a vacuum machine table such as AMAT multi-cavity equipment, the production equipment is cheaper, meanwhile, precious metals platinum and gold are respectively subjected to electron beam evaporation and thermal resistance evaporation, a target material is not needed, only the precious metal with the required film thickness is used each time, the utilization rate is high, and the material cost is greatly reduced.
Specifically, the PAD pattern is formed by etching the metal layer in the step 7, the spin speed of the spin coating is set to 1000-5000RPM, the photoetching time is set to 5-60S, the developing time is set to 60-240S, the time for etching the platinum metal film by the dry method is 100-2000S, and the time for etching the gold metal film by the wet method is 50-1000S. The specific etching time is influenced by various factors such as liquid components, concentration, temperature, material film thickness and the like, the adjustment is carried out according to specific parameters, the optimal conditions for selecting the process window are well made, and the provided process parameters are only in a reference range.
Specifically, in the step 9, the tantalum nitride thin film resistor layer is dry etched, the spin speed of the spin coating is set to 1000-5000RPM, the photolithography time is set to 5-30S, the development time is set to 60-240S, and the dry etching time is set to 20-600S. The resistance is determined according to the sheet resistance of the tantalum nitride film and the length-width ratio of the pattern.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A preparation method of a tantalum nitride film resistor is characterized by comprising the following steps:
step 1: the vacuum chamber is vacuumized to 10-3-10-6Pa magnitude;
step 2: introducing argon into the vacuum chamber, and rotationally cleaning the substrate by using AR ions;
and step 3: introducing nitrogen into the vacuum chamber, and sputtering the substrate by radio frequency to coat the tantalum nitride thin film resistor layer;
and 4, step 4: sputtering a substrate by radio frequency, performing titanium metal coating on the surface of the tantalum nitride thin film resistor layer, and stopping introducing argon and nitrogen after the titanium metal coating is finished;
and 5: evaporating noble metal platinum by using an electron beam, and performing platinum metal coating on the surface of the titanium metal film;
step 6: evaporating noble metal gold through thermal resistance, and performing gold metal coating on the surface of the platinum metal film;
and 7: breaking vacuum to normal pressure after cooling, taking out the substrate after film coating from the vacuum chamber, etching the metal layer on the surface of the tantalum nitride film resistance layer, and manufacturing a PAD pattern;
and 8: carrying out primary photoresist removing, cleaning and drying;
and step 9: etching the tantalum nitride thin film resistor layer by a dry method to manufacture a resistor pattern;
step 10: and removing the photoresist, cleaning and drying again to finish the preparation of the tantalum nitride film resistor.
2. The method according to claim 1, wherein in step 2, the AR ions spin-clean the substrate at a rotation frequency of 2-50RPM for the spin device, the flow of argon MFC is 10-200sccm, and the cleaning time is 3-15 minutes; and cleaning foreign matters and impurities on the surface of the substrate, and increasing the adhesion of the subsequent metal film deposition.
3. The method as claimed in claim 1, wherein in step 3, the tantalum nitride thin film resistor layer is coated, the magnetron device is controlled to raise the sputtering tantalum nitride target to a required process height of 10-100CM, which is 2-20CM away from the umbrella stand and parallel to the umbrella stand by adjusting the angle in advance, the flow of argon MFC is set to 20-200sccm, the flow of nitrogen is set to 10-100sccm, the radio frequency power is set to 10% -90% of the maximum power, and the thickness of the tantalum nitride thin film resistor layer is 200-5000 Å.
4. The method for preparing a tantalum nitride thin film resistor as claimed in claim 1, wherein in the step 4, the titanium metal is coated, the magnetron is controlled to raise the lifting rod of the sputtering titanium target to a required process height of 10-100CM, the lifting rod is 2-20CM away from the umbrella stand and parallel to a preset angle, the flow of the argon MFC is set to 50-200sccm, the flow of the nitrogen is set to 50-100sccm, the radio frequency power is set to 10% -90% of the maximum power, and the thickness of the titanium metal thin film is 20-500 Å.
5. The method according to claim 1, wherein the noble metal plating films in the steps 5 and 6 are pre-melted to evaporate noble metal platinum and noble metal gold respectively, the pre-melting power is 10% -90% of the maximum power, the thickness of the noble metal platinum metal film is 0.1-1um, and the thickness of the noble metal gold metal film is 0.1-5 um.
6. The method as claimed in claim 1, wherein the step 7 of etching the metal layer to form the PAD pattern comprises setting the spin speed of photoresist at 1000-.
7. The method as claimed in claim 1, wherein the tantalum nitride thin film resistor layer is dry etched in the step 9, the spin coating speed is set to 1000-.
8. The preparation equipment of the tantalum nitride film resistor is characterized by comprising a vacuum chamber (1), a rotating device (2), a gas-pumping pump group (3), a gas supply device (4), a magnetic control device (5), a thermal resistance evaporation device (6), an AR ion cleaning device (7) and an electron beam evaporation device (8); the air pump set (3) and the air supply device (4) both penetrate through the vacuum chamber (1) and are communicated with the inside of the vacuum chamber; the magnetic control device (5), the thermal resistance evaporation device (6), the AR ion cleaning device (7) and the electron beam evaporation device (8) are fixedly connected inside the vacuum chamber (1).
9. The manufacturing apparatus of tantalum nitride thin film resistor as claimed in claim 8, wherein said rotating means (2) is fixedly connected to the top end of the inside of said vacuum chamber (1), and said rotating means (2) can rotate inside said vacuum chamber (1); a plurality of umbrella stands (21) are uniformly distributed on the rotating device (2), and the substrate base plate (9) is fixedly placed on the surface of the umbrella stands (21).
10. The apparatus for preparing TaN thin film resistor as claimed in claim 8, wherein said magnetic control device (5) is provided with an adjusting mechanism (51) for adjusting the height and angle of said magnetic control device (5).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911380467.2A CN110983276A (en) | 2019-12-27 | 2019-12-27 | Preparation method and preparation equipment of tantalum nitride film resistor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911380467.2A CN110983276A (en) | 2019-12-27 | 2019-12-27 | Preparation method and preparation equipment of tantalum nitride film resistor |
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| CN110983276A true CN110983276A (en) | 2020-04-10 |
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| CN114481016A (en) * | 2022-01-21 | 2022-05-13 | 四川科尔威光电科技有限公司 | Preparation process for improving uniformity of tantalum nitride film |
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