CN105543792A - Magnetron sputtering device and magnetron sputtering method - Google Patents
Magnetron sputtering device and magnetron sputtering method Download PDFInfo
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- CN105543792A CN105543792A CN201510912832.5A CN201510912832A CN105543792A CN 105543792 A CN105543792 A CN 105543792A CN 201510912832 A CN201510912832 A CN 201510912832A CN 105543792 A CN105543792 A CN 105543792A
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- chip bench
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Abstract
The invention discloses a magnetron sputtering device and a magnetron sputtering method. The magnetron sputtering device comprises a substrate table for placing a substrate, a target opposite to the substrate table and used for sputtering the substrate, and a reaction cavity for accommodating the substrate table and the target. The magnetron sputtering device further comprises an angle adjusting device corresponding to the target and used for adjusting an angle of the corresponding target to the substrate table. The magnetron sputtering method comprises the following steps: (1) the reaction cavity and the substrate are cleaned; and the target is mounted; (2) the angle of the target corresponding to the substrate and the distance between the target and the substrate are adjusted; (3) the reaction cavity is vacuumized; (4) the presputtering is performed; and meanwhile, the rotating and swinging functions of the substrate table are started; and (5) the magnetron sputtering is performed. The device can be applied to deposition of large-area films with high uniformity and excellent repeatability, and can realize continuous magnetron sputtering of multiple layers of films; and the method can save the film plating time and improve the film plating efficiency.
Description
Technical field
The invention belongs to magnetron sputtering technique (MagnetronSputtering) field, particularly relate to a kind of magnetic control sputtering device and magnetically controlled sputter method.
Background technology
At present, magnetron sputtering technology develops comparative maturity, there is the advantages such as sedimentation velocity is fast, base material temperature rise is low, sputtering target material kind is many, the film deposited have purity high, damage the number of advantages such as little, compactness good, good uniformity, strong adhesion, good process repeatability.In addition, magnetron sputtering technique is comparatively simple due to device, simultaneously can accurate controlling diaphragm layer thickness, is easy to realize industrialization, enjoys the favor of film production producer.Along with the develop rapidly of flat pannel display industry, optical memory industry and solar cell industry, people claim to large-area coating film technology, mainly face the problem of three aspects: 1) homogeneity (comprising film thickness, film composition etc.) of film is difficult to control.2) repeatability of film production process is difficult to control.3) multilayer film Technology faces a more difficult problem, comprise Multicarity vacuum technique, substrate tranmission techniques, ultra-high purity film preparation Environmental costs high.
Summary of the invention
The technical problem to be solved in the present invention overcomes the deficiencies in the prior art, provide a kind of can be used for high uniformity, good reproducibility large area film deposition and can realize multilayer film continuous sputtering sedimentation, save plated film time and the magnetic control sputtering device of raising the efficiency and magnetically controlled sputter method.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of magnetic control sputtering device, comprising:
For placing the chip bench of substrate;
The target positioned opposite with described chip bench, carries out to described substrate the target that sputters for placing;
Reaction cavity, described chip bench and described target are all located in described reaction cavity;
Also comprise:
The angle regulator be connected with described target, for regulating target relative to the angle of chip bench.
Further improvement as technique scheme:
Also comprise:
Swivel arrangement, rotates for driving described chip bench;
Pendulous device, swings for driving described chip bench;
Target-cardinal distance setting device, for regulating target relative to the distance of described chip bench.
Described swivel arrangement comprises rotating machine and spherical hinge, and described chip bench is connected with the output shaft of rotating machine by described spherical hinge;
Described pendulous device comprises oscillating motor, swing axle and eccentric disk, and described eccentric disk is connected with oscillating motor by swing axle, the circumference of described eccentric disk and the surface contact of described chip bench.
Described angle regulator comprises resilient coupling and union lever, and described target is arranged on described union lever by resilient coupling.
The quantity of described target is multiple, and multiple target circumferentially distributes, and the center of circle of described circumference is just to the center of described chip bench, and each target is all equipped with angle regulator.
Also comprise the multichannel gas circuit be communicated with described reaction cavity, each gas circuit is equipped with gas flow controller.
Described many gas circuits comprise:
The Ar gas circuit arranged near the center of circle of described circumference, for providing working gas for magnetron sputtering;
One N
2gas circuit, for providing charge air conditioning for reaction cavity.
Described many articles of gas circuits also comprise the O arranged near the center of circle of described circumference
2gas circuit and/or the 2nd N
2gas circuit, for providing auxiliary sputter gas for magnetron sputtering.
Described many articles of gas circuits also comprise the 2nd O arranged near described chip bench
2gas circuit and/or the 3rd N
2gas circuit, for the gas that affords redress for thin film crystallization.
Also be provided with tracheae in described reaction cavity, described tracheae is laid along described chip bench hoop, and described tracheae is provided with multiple pore along pipe ring to spaced apart, described 2nd O
2gas circuit and/or described 3rd N
2gas circuit is communicated with described tracheae.
Also comprise assistant depositing ion source, described assistant depositing ion source is located on described reaction cavity, the ionogenic opening of described assistant depositing is towards described chip bench, described many articles of gas circuits also comprise the 2nd Ar gas circuit be connected with described assistant depositing ion source, for providing working gas for described assistant depositing ion source.
Also comprise: the vacuum acquisition device be communicated with described reaction cavity.
Also comprise: the heating unit corresponding with described chip bench and/or refrigerating unit.
Also comprise multiple target power supply, described multiple target power supply and multiple target one_to_one corresponding, the target power supply electrical connection that each described target is corresponding with it.
Each described target power supply comprises direct supply, radio-frequency power supply or direct current pulse power source.
As a total inventive concept, the present invention also provides a kind of magnetically controlled sputter method, comprises the following steps:
Cleaning reaction chamber and substrate, install target;
Regulate target relative to the angle of substrate, the distance between target and substrate;
Reaction cavity is vacuumized;
Carry out pre-sputtering, open rotation and the oscillating function of chip bench simultaneously;
Carry out magnetron sputtering.
Compared with prior art, the invention has the advantages that:
1, magnetic control sputtering device of the present invention, sputtering target is connected with angle regulator.Applicant is carrying out finding in the test of large size substrate plated film, the sputtering particle density in general target middle portion aura district is higher, so when carrying out large size substrate film forming, when sputtering particle vertically flies to substrate, the film that substrate region intermediate is formed is thicker, the film that fringe region is formed is thinner, causes the lack of homogeneity of film.The present invention is by arranging the angle regulator corresponding with sputtering target, for regulating corresponding target relative to the angle of chip bench, then sputtering particle can be made to fly to substrate with certain angle, be equipped with rotation and the swing of chip bench again, select suitable target-cardinal distance, thus avoid large size substrate surface to form the thicker and thin film layer that fringe region is thinner of region intermediate.
2, magnetic control sputtering device of the present invention, by multiple target, multichannel gas circuit is integrated in a reaction cavity, the uninterrupted continuously preparation of multilayer film can be realized in an equipment, multilayer film can be metallic films, alloy firm, metal compound film or its combination, different sputtering targets can connect different target power supplies, both the repeatedly technique of single target sputtering can have been carried out, also repeatedly technique and the cosputtering technique of multiple sputtering target can be carried out, the configuration of this device rationally, multiple functional, automatic controlling is good, the preparation cycle of multilayer film is shortened greatly, improve thin film deposition efficiency and quality, reduce production cost.
3, magnetic control sputtering device of the present invention, also comprises the heating unit heated substrate and the assistant depositing ion source bombarded substrate, in sputter deposition process, by heating substrate and/or bombarding, can improve adhesion of thin film.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the magnetic control sputtering device of the embodiment of the present invention 1.
Fig. 2 is the pendulous device schematic diagram of apparatus of the present invention example 1.
Fig. 3 is the schematic top plan view of the tracheae of the embodiment of the present invention 1.
Fig. 4 is the magnetron sputtering target of the embodiment of the present invention 1 and the position distribution schematic diagram of neighbouring gas circuit thereof.
Fig. 5 is the magnetically controlled sputter method schema of the embodiment of the present invention 1.
Marginal data: 101, reaction cavity; 102, chip bench; 103, heating unit; 104, target; 105, substrate; 106, an Ar gas circuit; 107, an O
2gas circuit; 108, the 2nd N
2gas circuit; 109, the 2nd O
2gas circuit; 110, the 2nd Ar gas circuit; 111, the 3rd N
2gas circuit; 112, a N
2gas circuit; 120, vacuum acquisition device; 121, the first target power supply; 122, the second target power supply; 123, the 3rd target power supply; 131, pendulous device; 133, rotating machine; 134, spherical hinge; 135, tracheae; 136, pore; 137, resilient coupling; 140, assistant depositing ion source; 150, oscillating motor; 151, swing axle; 152, eccentric disk; 160, flange; 170, target.
Embodiment
Below in conjunction with Figure of description and concrete preferred embodiment, the invention will be further described, but protection domain not thereby limiting the invention.
embodiment 1:
Referring to figs. 1 through Fig. 4, magnetic control sputtering device of the present invention, comprising:
For placing the chip bench 102 of substrate 105;
The target 104 positioned opposite with chip bench 102, carries out to substrate 105 target that sputters for placing;
Reaction cavity 101, chip bench 102 and target 104 are all located in described reaction cavity 101;
Also comprise:
The angle regulator be connected with target 104, for regulating target 104 relative to the angle of chip bench 102.
In prior art, what often design is that target and chip bench are just to setting, sputtering particle vertically flies to substrate, but, the sputtering particle density in general target middle portion aura district is higher, so when carrying out large size substrate film forming, the film that substrate region intermediate is formed is thicker, and the film that fringe region is formed is thinner.The present invention is by arranging the angle regulator corresponding with sputtering target, for regulating corresponding target relative to the angle of chip bench, then sputtering particle can be made to fly to substrate with certain angle, thus avoid large size substrate surface to form the thicker and thin film layer that fringe region is thinner of region intermediate.
The magnetic control sputtering device of the present embodiment, also comprises:
Swivel arrangement, rotates for drive substrate platform 102;
Pendulous device, swings for driving chip bench 102;
Target-cardinal distance setting device, for regulating target relative to the distance of chip bench 102.
For ensureing the homogeneity of large area film deposition, in the present embodiment, except being provided with the angle regulator that is connected with target 104, be also provided with target-cardinal distance setting device, and introduce and be respectively used to drive substrate platform 102 and rotate and the swivel arrangement that swings and pendulous device.Sputtering experiment first according to the parameter such as operating pressure and sputtering power, selects suitable target-cardinal distance and target angle before carrying out, in magnetron sputtering process, open swivel arrangement and pendulous device, drive substrate platform 102 carries out rotating and swinging, and can realize the thin film deposition of big area high uniformity further.
As shown in Figure 2, in the present embodiment, swivel arrangement comprises rotating machine 133 and spherical hinge 134, and chip bench 102 is connected with the output shaft of rotating machine 133 by spherical hinge 134.
Pendulous device 131 comprises oscillating motor 150, swing axle 151 and eccentric disk 152, the circumference of eccentric disk 152 and the surface contact of described chip bench 102, and eccentric disk 152 is connected with oscillating motor 150 by swing axle 151.
In the present embodiment, the swing of chip bench 102 is realized by the cooperation of pendulous device 131 and spherical hinge 134, oscillating motor 150 drives eccentric disk 152 to rotate by swing axle 151, due to the asymmetry of eccentric disk 152, eccentric disk 152 applies pressure to chip bench 102 in rotary course, under the cooperation of spherical hinge 134, chip bench 102 realizes swinging up and down.
In the present embodiment, the two ends of chip bench 102 are equipped with pendulous device 131, by the start time of the oscillating motor 150 at two ends of staggering, can realize the bilateral of chip bench 102 and swing up and down.
In the present embodiment, angle regulator comprises resilient coupling 137 and union lever, and target 104 is arranged on union lever by resilient coupling 137.In other embodiments, resilient coupling 137 can replace to hinge, equally can realize the angular adjustment of target 104 relative to chip bench 102.
Union lever stretches out outside reaction cavity 101 away from one end of target 104, by the distance of mobile link bar in reaction cavity 101, and with flange 160, union lever is fixed on the outer wall of reaction cavity 101, can realize the distance adjustment of target relative to chip bench 102.
In the present embodiment, the quantity of target 104 is multiple, and multiple target 104 circumferentially distributes, and the center of circle of this circumference is just to the center of chip bench 102.And each target 104 is all equipped with angle regulator.The present invention, by being optimized the arrangement mode of multiple target, when can guarantee multiple target co-sputtering, further realizes the homogeneity of big area height thin film deposition.
The magnetic control sputtering device of the present embodiment also comprises many gas circuits be communicated with reaction cavity 101, and multichannel gas circuit is used for the gas needed for magnetron sputtering to be injected in reaction cavity 101 by gas flow controller.
Many gas circuit comprises:
The Ar gas circuit 106 arranged near the center of circle of above-mentioned circumference, for providing working gas for magnetron sputtering.
One N
2gas circuit 112, for providing charge air conditioning for reaction cavity 101.
In the present embodiment, many articles of gas circuits also comprise the O arranged near the center of circle of above-mentioned circumference
2gas circuit 107 and/or the 2nd N
2gas circuit 108, during for depositing the compound film of nitrogenous and/or oxygen, provides auxiliary sputter gas.
In the present embodiment, many articles of gas circuits also comprise the 2nd O arranged near chip bench 102
2gas circuit 109 and/or the 3rd N
2gas circuit 111, during for depositing the compound film of nitrogenous and/or oxygen, provides the compensation gas of thin film crystallization.The Sauerstoffatom/sputtered in oxide compound/or nitride or nitrogen-atoms fly in the process of substrate 105, and by the impact of particle mean free path and multiple impacts, momentum reduces, and has part and can not reach substrate 105, by arranging the 2nd O near chip bench 102 place
2gas circuit 109 and/or the 3rd N
2gas circuit 111, ensures timely, enough gas compensations, improves thin film crystallization quality.
In the present embodiment, for magnetron sputtering provides an Ar gas circuit 106 of working gas, provides an O of auxiliary sputter gas for magnetron sputtering
2gas circuit 107 and/or the 2nd N
2the center of the circumference that gas circuit 108 all surrounds near multiple target is arranged, and can promote formation and the maintenance of plasma body, especially during deposited compound film, for providing an O of the auxiliary sputter gas of magnetron sputtering
2gas circuit 107 and/or the 2nd N
2gas circuit 108 is more important, compound target can be made to obtain effective oxygen or the compensation of nitrogen component at the sputtering initial stage, improve film quality further.
In the present embodiment, be also provided with tracheae 135 in reaction cavity 101, this tracheae 135 is laid along chip bench 102 hoop, and tracheae 135 is provided with multiple pore the 136, two O along pipe ring to spaced apart
2gas circuit 109 and/or the 3rd N
2gas circuit 111 is communicated with this tracheae 135.The compensation gas of magnetron sputtering evenly diffuses to substrate surface by the multiple pores 136 on this tracheae 135, the homogeneity of whole large size substrate surface compensation gas, promptness and enough property can be ensured, effectively reduce the air pressure fluctuation of substrate surface, ensure that the repeatability of coating process, make thickness of coating in large size substrate regional even.
The present embodiment adopts Integrated Optimal Design theory, by multiple target, multichannel gas circuit is integrated in a reaction cavity, by the uninterrupted continuously preparation of multilayer film can be realized in a reaction cavity, multilayer film can be metallic films, alloy firm, compound film or its combination, different sputtering targets can connect different target power supplies, both the repeatedly technique of single target sputtering can have been carried out, also repeatedly technique and the cosputtering technique of multiple sputtering target can be carried out, the configuration of this device rationally, multiple functional, automatic controlling is good, the preparation cycle of multilayer film is shortened greatly, improve thin film deposition efficiency and quality, reduce production cost.
The magnetic control sputtering device of the present embodiment also comprises assistant depositing ion source 140, this assistant depositing ion source 140 is located on reaction cavity 101, the opening of this assistant depositing ion source 140 is towards chip bench 102, many articles gas circuit also comprises the 2nd Ar gas circuit 110 be connected with assistant depositing ion source 140, for assistant depositing ion source 140 provides working gas.In the process of carrying out magnetron sputtering, bombard substrate by this assistant depositing ion source 140, the sticking power of substrate 105 surface film can be improved.
Assistant depositing ion source 140 at least possesses substrate pre-washing, film assistant depositing function, can be Kaufman ion source or other types ion source.
The magnetic control sputtering device of the present embodiment also comprises the vacuum acquisition device 120 be communicated with reaction cavity 101, for vacuumizing reaction cavity 101.
The magnetic control sputtering device of the present embodiment also comprises the heating unit 103 corresponding with chip bench 102 and/or refrigerating unit, heats the chip bench 102 of working order and/or cools.Heated by heating unit 103 pairs of substrates, can further improve substrate surface adhesion of thin film.
The magnetic control sputtering device of the present embodiment also comprises multiple target power supply, multiple target power supply and multiple target one_to_one corresponding, the target power supply electrical connection that each target is corresponding with it.Target power supply can be direct supply, radio-frequency power supply or direct current pulse power source.Target can be ordinary target or strong magnetic target, and magnetron sputtering target is not limited to fixing size and type, can be the circular of different size, columnar target or long strip shape target.
In the present embodiment, magnetron sputtering target quantity is three, is respectively target 104a, target 104b and target 104c, and the target power supply that each target is corresponding is respectively the first target power supply 121, second target power supply 122 and the 3rd target power supply 123.
Fig. 5 shows magnetically controlled sputter method of the present invention, may be used for the deposition of large-area metallic film, alloy firm, compound film etc., comprises the following steps:
The first step, successively cleaning reaction cavity 101, install target 170, and cleaning is mounted substrate 105 also;
Second step, regulates target 104 relative to the distance of substrate 105 and target 104 angle relative to substrate 105;
3rd step, vacuumizes reaction cavity 101;
4th step, adopts assistant depositing ion source 140 pairs of substrates to carry out pre-washing;
5th step, set operating pressure, sputtering power and chip bench Heating temperature successively, wherein chip bench is heated to be selective process;
6th step, according to concrete technology needs, carries out pre-sputtering; After build-up of luminance success, forming stable plasma glow needs certain hour, can not carry out sputter coating, only carry out pre-sputtering during this period of time, to remove substrate surface oxide compound and dirty;
7th step, while performing pre-sputtering technique, opens chip bench rotation, chip bench swings and assisting ion source is bombarded;
8th step, carries out coating process, both can be single process or the repeatedly technique of single sputtering target, may also be the cosputtering technique of multiple sputtering target single or multiple.
For metal and alloy target material, direct supply or pulse dc power build-up of luminance pressure range are at 0.1 ~ 10Pa, and operating pressure 407 is advised between 0.1Pa ~ 2.0Pa.For compound target, radio-frequency starting pressure range is between 1Pa ~ 10Pa, and process pressure 407 is advised between 0.1Pa ~ 2.0Pa.The large I of sputtering power, according to target size and power density computation, in conjunction with the application demand of coating speed, sets suitable sputtering power.
For improving the deposition uniformity of film, when technological experiment carries out, according to the parameter such as operating pressure, sputtering power, select suitable target-cardinal distance and target angle, coordinate chip bench to rotate and chip bench oscillating function simultaneously, the thin film deposition of big area high uniformity can be realized.
For realizing the continuous production of multilayer film, different sputtering targets can connect different target power supplies, both can carry out the repeatedly technique of single target sputtering, also can carry out repeatedly technique and the cosputtering technique of multiple sputtering target, improve thin film deposition efficiency and quality, reduce production cost.
For improving adhesion of thin film, when technique is carried out, can be heated by chip bench heating unit 103 pairs of chip bench 102, carrying out auxiliary bombardment deposition by assistant depositing ion source 140 pairs of substrates, and adjust suitable operating pressure size and realize.
The above is only the preferred embodiment of the present invention, and protection scope of the present invention is also not only confined to above-described embodiment.All technical schemes belonged under thinking of the present invention all belong to protection scope of the present invention.It is noted that for those skilled in the art, improvements and modifications under the premise without departing from the principles of the invention, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (16)
1. a magnetic control sputtering device, comprising:
For placing the chip bench (102) of substrate (105);
The target (104) positioned opposite with described chip bench (102), carries out the target sputtered to described substrate (105) for placement;
Reaction cavity (101), described chip bench (102) and described target (104) are all located in described reaction cavity (101);
It is characterized in that, also comprise:
The angle regulator be connected with described target (104), for regulating target (104) relative to the angle of chip bench (102).
2. magnetic control sputtering device according to claim 1, is characterized in that, also comprises:
Swivel arrangement, rotates for driving described chip bench (102);
Pendulous device (131), swings for driving described chip bench (102);
Target-cardinal distance setting device, for regulating target (104) relative to the distance of described chip bench (102).
3. magnetic control sputtering device according to claim 2, is characterized in that,
Described swivel arrangement comprises rotating machine (133) and spherical hinge (134), and described chip bench (102) is connected by the output shaft of described spherical hinge (134) with rotating machine (133);
Described pendulous device (131) comprises oscillating motor (150), swing axle (151) and eccentric disk (152), described eccentric disk (152) is connected with oscillating motor (150) by swing axle (151), the circumference of described eccentric disk (152) and the surface contact of described chip bench (102).
4. magnetic control sputtering device according to claim 3, is characterized in that, described angle regulator comprises resilient coupling (137) and union lever, and described target (104) is arranged on described union lever by resilient coupling (137).
5. the magnetic control sputtering device according to any one of Claims 1 to 4, it is characterized in that, the quantity of described target (104) is multiple, and multiple target (104) circumferentially distributes, the center of circle of described circumference is just to the center of described chip bench (102), and each target (104) is all equipped with angle regulator.
6. magnetic control sputtering device according to claim 5, is characterized in that, also comprises the multichannel gas circuit be communicated with described reaction cavity (101), each gas circuit is equipped with gas flow controller.
7. magnetic control sputtering device according to claim 6, is characterized in that, described many gas circuits comprise:
The Ar gas circuit (106) arranged near the center of circle of described circumference, for providing working gas for magnetron sputtering;
One N
2gas circuit (112), for providing charge air conditioning for reaction cavity (101).
8. magnetic control sputtering device according to claim 7, is characterized in that, described many articles of gas circuits also comprise the O arranged near the center of circle of described circumference
2gas circuit (107) and/or the 2nd N
2gas circuit (108), for providing auxiliary sputter gas for magnetron sputtering.
9. magnetic control sputtering device according to claim 8, is characterized in that, described many articles of gas circuits also comprise the 2nd O arranged near described chip bench (102)
2gas circuit (109) and/or the 3rd N
2gas circuit (111), for the gas that affords redress for thin film crystallization.
10. magnetic control sputtering device according to claim 9, it is characterized in that, tracheae (135) is also provided with in described reaction cavity (101), described tracheae (135) is laid along described chip bench (102) hoop, described tracheae (135) is provided with multiple pore (136) along pipe ring to spaced apart, described 2nd O
2gas circuit (109) and/or described 3rd N
2gas circuit (111) is communicated with described tracheae (135).
11. magnetic control sputtering devices according to any one of claim 7 ~ 10, it is characterized in that, also comprise assistant depositing ion source (140), described assistant depositing ion source (140) is located on described reaction cavity (101), the opening of described assistant depositing ion source (140) is towards described chip bench (102), described many articles of gas circuits also comprise the 2nd Ar gas circuit (110) be connected with described assistant depositing ion source (140), for providing working gas for described assistant depositing ion source (140).
12. magnetic control sputtering devices according to any one of Claims 1 to 4, is characterized in that, also comprise: the vacuum acquisition device (120) be communicated with described reaction cavity (101).
13. magnetic control sputtering devices according to any one of Claims 1 to 4, is characterized in that, also comprise: the heating unit corresponding with described chip bench (102) and/or refrigerating unit.
14. magnetic control sputtering devices according to any one of Claims 1 to 4, is characterized in that, also comprise multiple target power supply, described multiple target power supply and multiple target one_to_one corresponding, the target power supply electrical connection that each described target is corresponding with it.
15. magnetic control sputtering devices according to claim 14, is characterized in that, each described target power supply comprises direct supply, radio-frequency power supply or direct current pulse power source.
16. 1 kinds of magnetically controlled sputter methods, is characterized in that, comprise the following steps:
(1) cleaning reaction chamber and substrate, installs target;
(2) regulate target relative to the angle of substrate, the distance between target and substrate;
(3) reaction cavity is vacuumized;
(4) carry out pre-sputtering, open rotation and the oscillating function of chip bench simultaneously;
(5) magnetron sputtering is carried out.
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| CN110983276A (en) * | 2019-12-27 | 2020-04-10 | 无锡奥夫特光学技术有限公司 | Preparation method and preparation equipment of tantalum nitride film resistor |
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| CN111647867A (en) * | 2020-07-02 | 2020-09-11 | 杭州企势科技有限公司 | Magnetron sputtering control mechanism of vacuum coating machine |
| CN112481595A (en) * | 2020-11-20 | 2021-03-12 | 中国电子科技集团公司第四十八研究所 | Ion beam sputtering coating equipment |
| CN113265613A (en) * | 2021-04-28 | 2021-08-17 | 浙江艾微普科技有限公司 | Preparation method and equipment of stress-adjustable reactive sputtering AlN film |
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