CN206706198U - Magnetic control sputtering device and magnetron sputtering apparatus - Google Patents
Magnetic control sputtering device and magnetron sputtering apparatus Download PDFInfo
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- CN206706198U CN206706198U CN201720526166.6U CN201720526166U CN206706198U CN 206706198 U CN206706198 U CN 206706198U CN 201720526166 U CN201720526166 U CN 201720526166U CN 206706198 U CN206706198 U CN 206706198U
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Abstract
The utility model provides a kind of magnetic control sputtering device and magnetron sputtering apparatus.The device includes：For fixing the target bearing structure of target；For fixing the base plate carrying structure of ilm substrate to be plated；Multiple barrier structures, multiple barrier structures, which enclose, is set to a cavity, the cavity is arranged between the target bearing structure and the base plate carrying structure, be formed as the electric discharge of the target in the target bearing structure caused by isoelectronic species be sputtered onto the passage of ilm substrate to be plated；The first barrier structure in wherein described barrier structure includes at least two working conditions, and in different working condition, different surfaces are towards the inside of the cavity.The device can increase the service life by setting the barrier structure of movable form, the replacement cycle be reduced, so as to improve the rate of transferring that magnetron sputtering apparatus uses.
Description
Technical field
The apparatus field for display manufacturing is the utility model is related to, refers in particular to a kind of magnetic control sputtering device and magnetic control
Sputtering equipment.
Background technology
Magnetron sputtering is physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) one kind, and in general is splashed
The method of penetrating can be used for preparing deposit metal films in the multiple materials, such as display manufacturing such as metal, semiconductor, insulator then
The one of which embodiment exactly realized using magnetron sputtering technique, has that equipment is simple, easily controllable, plated film using the technique
The advantages that area is greatly and adhesive force is strong.
Magnetron sputtering includes multiple species according to technologic difference, but generally operation principle is：Utilize magnetic field and electric field
Reciprocation, run electronics curl near target material surface, to increase the probability that electronic impact argon gas produces ion, institute
The target surface of target is hit under electric field action for caused ion so that target sputters.
As Fig. 1 be prior art magnetron sputtering apparatus internal cavity part-structure schematic diagram, in a high temperature high vacuum chamber
Internal portion, target 1 be arranged in parallel with substrate 2, during magnetron sputtering technique is performed, the plasma of the electric discharge formation of target 1
(Plasma) on deposition to the substrate 2 being oppositely arranged, plated film is carried out to substrate 2.To ensure that target discharges the plasma to be formed
Completely on deposition to substrate 2, generally enclose to set to form cavity 4 by barrier structure 3 in the periphery of substrate 2, make to wait daughter beam to overlay on
In the cavity 4.
However, because in the discharge process of target 1, powder produced by electric discharge can be gradually deposited on barrier structure 3, especially
Bottom barrier structure deposition is more, causes the aggregation of the powder inside of cavity 4, the powder when target 1 discharges on barrier structure 3 is same
Sample, which can discharge, to be sputtered onto on substrate 2, makes substrate 2 contaminated, so as to influence product yield.
The mode that currently available technology solves above-mentioned technical problem is often to begin to speak to clean barrier structure or periodic replacement newly
Barrier structure, but this method makes the use process of magnetron sputtering apparatus cumbersome, influences the execution cycle of magnetron sputtering technique
And cause the rate of transferring of magnetron sputtering apparatus relatively low.
Utility model content
The purpose of technical solutions of the utility model is to provide a kind of magnetic control sputtering device and magnetron sputtering apparatus, for improving
What magnetron sputtering apparatus used the rate of transferring.
The utility model specific embodiment provides a kind of magnetic control sputtering device, wherein, including：
For fixing the target bearing structure of target；
For fixing the base plate carrying structure of ilm substrate to be plated；
Multiple barrier structures, multiple barrier structures, which enclose, is set to a cavity, and the cavity is arranged at the target carrying
Between structure and the base plate carrying structure, be formed as in the target bearing structure target electric discharge caused by isoelectronic species splash
It is incident upon the passage of ilm substrate to be plated；
The first barrier structure in wherein described barrier structure includes at least two working conditions, in different working condition
When, different surfaces are towards the inside of the cavity.
Preferably, described magnetic control sputtering device, wherein, the magnetic control sputtering device also includes：
Driving structure, it is connected with first barrier structure；
Wherein described first barrier structure is overturn by the driving of the driving structure, is cut between different working condition
Change.
Preferably, described magnetic control sputtering device, wherein, the driving structure includes electric rotating machine, and described first blocks
Structure is connected with the rotary shaft of the electric rotating machine.
Preferably, described magnetic control sputtering device, wherein, the quantity of the driving structure is two, respectively with described the
The opposite end of one barrier structure is fixedly connected.
Preferably, described magnetic control sputtering device, wherein, the magnetic control sputtering device also includes：
Disposable box, it is arranged at the lower position of first barrier structure.
Preferably, described magnetic control sputtering device, wherein, the ilm substrate to be plated and the target are in respectively vertical shape
State, the different surfaces of first barrier structure towards the cavity inside when, each surface is in horizontal shape upward
State.
Preferably, described magnetic control sputtering device, wherein, first barrier structure is formed as platy structure, the first work
When making state, first surface is towards the inside of the cavity；In the second working condition, the relative second surface court of first surface
To the inside of the cavity.
Preferably, described magnetic control sputtering device, wherein, first barrier structure includes three tabulars of integrally connected
Part, wherein the first plate portion is generally aligned in the same plane with the second plate portion, the 3rd plate portion and first plate-like portion
Divide and second plate portion is in predetermined angle；In the first working condition, the 3rd plate portion and first plate
Shape part forms a portion enclosed and set the cavity；In the second working condition, the 3rd plate portion and described the
Two plate portions form a portion enclosed and set the cavity.
Preferably, described magnetic control sputtering device, wherein, the quantity of first barrier structure is at least two.
The utility model embodiment also provides a kind of magnetron sputtering apparatus, wherein, including vacuum cavity and be arranged at described
The magnetic control sputtering device described in as above any one in vacuum cavity.
One or more embodiments of the present utility model at least have the advantages that：
Magnetic control sputtering device described in the utility model embodiment, the wherein barrier structure for forming cavity are arranged to movable
Form, during different working condition different surfaces towards the inside of cavity, different surfaces may be incorporated for target discharge to be formed etc.
The deposition of gas ions, for the only barrier structure for the deposition that a surface is used for plasma, movable shape is set
The barrier structure of formula can increase the service life, and the replacement cycle be reduced, so as to improve the rate of transferring that magnetron sputtering apparatus uses.
Brief description of the drawings
Fig. 1 is the part-structure schematic diagram of prior art magnetron sputtering apparatus internal cavity；
Fig. 2 is the part-structure schematic diagram of magnetic control sputtering device described in the utility model embodiment one；
Fig. 3 is that a wherein state for first barrier structure is shown in magnetic control sputtering device described in the utility model embodiment one
It is intended to；
Fig. 4 is the part-structure schematic diagram of magnetic control sputtering device described in the utility model embodiment two；
Fig. 5 is the planar structure schematic diagram of the first barrier structure in magnetic control sputtering device described in the utility model embodiment.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describe, it is clear that described embodiment is the utility model part of the embodiment, rather than whole implementation
Example.Based on the embodiment in the utility model, those of ordinary skill in the art are obtained under the premise of creative work is not made
The every other embodiment obtained, belong to the scope of the utility model protection.
The utility model specific embodiment provides a kind of magnetic control sputtering device, including：
For fixing the target bearing structure of target；
For fixing the base plate carrying structure of ilm substrate to be plated；
Multiple barrier structures, multiple barrier structures, which enclose, is set to a cavity, and the cavity is arranged at the target carrying
Between structure and the base plate carrying structure, be formed as in the target bearing structure target electric discharge caused by isoelectronic species splash
It is incident upon the passage of ilm substrate to be plated；
The first barrier structure in wherein described barrier structure includes at least two working conditions, in different working condition
When, different surfaces are towards the inside of the cavity.
Magnetic control sputtering device described in the utility model embodiment, by the way that a wherein barrier structure (mask) for cavity will be formed
It is arranged to movable form so that movably barrier structure can switch at least two working conditions for this, different operating shape
Different surfaces are towards the inside of cavity during state, and different surfaces may be incorporated for target and discharge the deposition of the plasma to be formed, phase
For there was only barrier structure of the surface for the deposition of plasma, set the barrier structure of movable form can
Increase the service life, the replacement cycle is reduced, so as to improve the rate of transferring that magnetron sputtering apparatus uses.
The dimensional structure diagram of magnetic control sputtering device as described in Fig. 2 is the utility model specific embodiment one.Implementing
In example one, the magnetic control sputtering device includes：
Target bearing structure 10, target 100 are fixed in the target bearing structure 10；
Base plate carrying structure 20, ilm substrate 200 to be plated are fixed in the base plate carrying structure 20；
Multiple barrier structures, the plurality of barrier structure, which encloses, is set to a cavity 30, and cavity 30 is arranged at target bearing structure
Between 10 and base plate carrying structure 20, be formed as the target 100 in target bearing structure 10 and discharge caused plasma sputtering
To the passage of ilm substrate 200 to be plated；
Wherein, the first barrier structure 40 in multiple barrier structures includes at least two working conditions, in different operating shape
During state, different surfaces are towards the inside of cavity 30.
With reference to Fig. 2, in the utility model embodiment, the first barrier structure 40 is formed as platy structure, including relative
One surface 41 and second surface 42, wherein the first barrier structure 40 includes two working conditions, in two different working conditions,
Relative first surface 41 and second surface 42 is respectively facing the inside of cavity 30, is respectively formed as the inner surface of cavity 30 wherein
A part.
Due to first surface 41 and second surface 42 may be incorporated for target discharge to be formed it is plasma-deposited, relative to
Prior art only has a surface to be used for for plasma-deposited barrier structure, and magnetic control splashes described in the utility model embodiment
First barrier structure 40 of injection device has longer service life, reduces the replacement cycle of barrier structure, is improved so as to reach
The purpose of what magnetron sputtering apparatus used the rate of transferring.
In the utility model embodiment, target bearing structure 10 can include supporting back board, neck or support frame etc., use
In carrying and fixed target 100.It is preferred that the target bearing structure 10 can be used in carrying the target 100 of different size.Target
100 can be as needed different type, different size, such as can be rectangular metal material.
Base plate carrying structure 20 can also include supporting back board, neck or support frame, for carrying and fixing to be coated
Substrate 200.Equally it is preferred that the base plate carrying structure 20 can be used in carrying the substrate of fixed different size.
In addition, in the utility model specific embodiment, ilm substrate 200 to be plated be arranged in parallel with target 100, and is respectively to be in
Vertically, based on this set-up mode, discharged when target 100 caused by plasma be sputtered onto ilm substrate 200 to be plated through cavity 30
When, due to Action of Gravity Field, substantial amounts of plasma can be deposited on the lower position of cavity 30, therefore, it is preferable that first blocks knot
Structure 40 is configured to the lower member of cavity 30,
When first surface 41 or second surface 42 are used for the deposition of plasma towards the inside of cavity 30, respectively in court
On state, and it is preferred that first surface 41 and second surface 42 in level, it is as much as possible plasma-deposited to ensure
On first surface 41 or second surface 42.
Certainly, ilm substrate 200 to be plated is not limited in vertical with target 100, or in level, or relative to magnetic
The mounting plane for controlling sputter equipment be in other predetermined inclination angles, when the setting of ilm substrate 200 to be plated and target 100, relative to
When the mounting plane of magnetic control sputtering device is in other predetermined inclination angles outside vertical, the first barrier structure 40 can be to form
Any of which barrier structure of multiple barrier structures of cavity 30.
Certainly, in the multiple barrier structures for forming cavity 30, there is the first barrier structure of at least two working conditions
40 quantity is not limited to one, or and it is multiple, namely with reference to Fig. 2, the different parts structure of composition cavity 30 can also be made
Multiple barrier structures of part are arranged to movable form, including at least two surfaces, in different working condition, different surfaces court
To the inside of cavity 30, for extending the service life of corresponding barrier structure.Wherein one when multiple barrier structures blocks knot
When structure gathers a large amount of plasmas on multiple surfaces, it is only necessary to removable parts barrier structure, without to forming cavity
Whole barrier structure is changed.
With reference to Fig. 2, in the utility model embodiment, the first barrier structure 40 is formed as platy structure, in different conditions,
Relative first surface 41 and second surface 42 is respectively facing the inside of cavity 30.Using first barrier structure 40, when first
Surface 41 is towards the inside of cavity 30, for plasma-deposited and after a large amount of plasmas are deposited, first can be made to block
Structure 40 is rotated, and is turned to second surface 42 and is sunk towards the state inside cavity 30, second surface 42 for plasma
Product, the so barrier structure compared to fixed setting, service life increase.
It is preferred that the first barrier structure 40 can also be formed as polyhedral structure, including more than two working condition, and
And during different working condition, multiple different surfaces are respectively facing the inside of cavity 30, the heavy of plasma may be respectively used for
Product, compared to the first barrier structure 40 for including two surfaces, service life is longer.
In the utility model embodiment, in order to realize switching of first barrier structure 40 between multiple working conditions, such as
Shown in Fig. 2 and Fig. 3, magnetic control sputtering device also includes：
Driving structure 50, it is connected with the first barrier structure 40；
Wherein the first barrier structure 40 is overturn by the driving of driving structure 50, is switched between different working condition.
Wherein, the driving structure 50 can include electric rotating machine, the rotary shaft phase of the first barrier structure 40 and electric rotating machine
Connection, the rotation of rotary shaft is driven by electric rotating machine, the first barrier structure 40 is overturn, and makes the table of first surface 41 or second
Face 42 upward, namely the inside towards cavity 30.
It is preferred that the quantity of driving structure 50 is two, the opposite end with the first barrier structure 40 is fixedly connected respectively,
The first barrier structure 40 is overturn for synchronization action, and ensures the balance in switching process.
In addition, it is preferred that the first barrier structure 40 is internally provided with reinforcement, and the quantity of reinforcement is at least two
It is individual, the rotary shaft of electric rotating machine is respectively connecting to by each reinforcement, to ensure the first barrier structure 40 and electric rotating machine
The firm connection of rotary shaft, and ensure the balance in switching process.
In addition, magnetic control sputtering device described in the utility model specific embodiment, as shown in figure 3, also including：
Disposable box 60, the lower position of the first barrier structure 40 is arranged at, is gathered on the first barrier structure 40
The collection of gas ions.
With reference to Fig. 3, when first surface 41 is towards the inside of cavity 30, for it is plasma-deposited and when deposition it is a large amount of etc. from
After daughter, when the upset of the first barrier structure 40 is more than 90 degree by driving structure 50, the grade gathered on first surface 41 from
Daughter can be slid to disposable box 60 under gravity, realize the self-cleaning of the first barrier structure 40 and the receipts of plasma
Collection, reduce diffusion and pollution of the plasma in cavity 30.When driving structure 50 make the first barrier structure 40 overturn 180 degree,
Second surface 42 upward when, second surface 42 can continue on for the plasma-deposited of magnetron sputtering process, so compared to
The barrier structure of fixed setting, service life increase.
Further, with reference to Fig. 2, magnetic control sputtering device described in the utility model embodiment also includes a fixed support 70, uses
In the fixation of multiple barrier structures and driving structure 50.The fixed support 70 can be connected by screw mode and magnetron sputtering
The mainframe of device is connected.
Using magnetic control sputtering device described in the utility model embodiment, compared to the barrier structure of fixed setting, setting can
The barrier structure of upset structure type has longer service life, so as to reduce the replacement cycle of barrier structure, reaches raising
The purpose of what magnetron sputtering apparatus used the rate of transferring.
The utility model also provides the magnetic control sputtering device of implementation two, as shown in figure 4, the magnetic control sputtering device includes：
Target bearing structure 10, target 100 are fixed in the target bearing structure 10；
Base plate carrying structure 20, ilm substrate 200 to be plated are fixed in the base plate carrying structure 20；
Multiple barrier structures, the plurality of barrier structure, which encloses, is set to a cavity 30, and cavity 30 is arranged at target bearing structure
Between 10 and base plate carrying structure 20, be formed as the target 100 in target bearing structure 10 and discharge caused plasma sputtering
To the passage of ilm substrate 200 to be plated；
Wherein, the first barrier structure 40 in multiple barrier structures includes at least two working conditions, in different operating shape
During state, different surfaces are towards the inside of cavity 30.
With reference to Fig. 4 and Fig. 5, in the utility model embodiment, the first barrier structure 40 includes three tabulars of integrally connected
Part, wherein the first plate portion 401 is generally aligned in the same plane with the second plate portion 402, the 3rd plate portion 403 and the first plate
The plate portion 402 of shape part 401 and second is in predetermined angle (being 90 degree in the utility model embodiment)；In the first working condition
When, the 3rd plate portion 403 and the first plate portion 401 form a portion enclosed and set cavity 30；In the second working condition
When, the 3rd plate portion 403 and the second plate portion 402 form a portion enclosed and set cavity 30.
According to Fig. 4 and Fig. 5, in the first working condition, the tabular of first end face 4031 and first of the 3rd plate portion 403
The end face 4011 of part 401 forms a portion of the inner surface of cavity 30, for magnetron sputtering towards the inside of cavity 30
The deposition of process plasma；In the second working condition, the tabular of second end face 4032 and second of the 3rd plate portion 403
The end face 4021 of part 402 forms a portion of the inner surface of cavity 30 towards the inside of cavity 30.
Based on above-mentioned setting structure, compared to embodiment one, make the turnable face of composition cavity 30 by lower horizontal surface
The combination of lower horizontal surface and side portion surface is extended to, the area in face may be reversed for expanding lower position.
The first plate portion 401 and the second plate portion 402 are extended with one end of the 3rd plate portion 403 above,
Make bottom that the area in face may be reversed to be illustrated exemplified by the expansion of the end, certainly in the other end of the 3rd plate portion 403
Can set with the first plate portion 401,402 corresponding structure of the second plate portion, can also make to may be reversed at the other end
The area in face expands.
Identical with embodiment one, magnetic control sputtering device can also include described in the utility model embodiment two：
Driving structure, it is connected with the first barrier structure；
Wherein the first barrier structure is driven by driving structure to overturn, and is switched between different working condition.
The driving structure can include electric rotating machine, and the first barrier structure is connected with the rotary shaft of electric rotating machine, passed through
Electric rotating machine drives the rotation of rotary shaft, and the first barrier structure is cut between above-mentioned the first working condition and the second working condition
Change.
In addition, magnetic control sputtering device can also include described in the utility model embodiment two：
Disposable box, the lower position of the first barrier structure 40 is arranged at, plasma is gathered on the first barrier structure
The collection of body.
Using magnetic control sputtering device described in the utility model embodiment two, the first barrier structure is driven to exist by driving structure
The course of work switched between first working condition and the second working condition is identical with embodiment one, will not be repeated here.
On the other hand the utility model embodiment also provides a kind of magnetron sputtering apparatus, including vacuum cavity and be arranged at true
The magnetic control sputtering device described in as above any one in cavity body, is wherein additionally provided with for carrying magnet in the vacuum cavity
Magnet bearing structure and the electric field for producing electric field provide structure, for the execution of magnetron sputtering process.Art technology
Personnel should be able to understand the magnetron sputtering apparatus of the magnetic control sputtering device including any of the above-described example structure, no longer detailed herein
Describe in detail bright.
Using magnetic control sputtering device described in the utility model embodiment and equipment, include the barrier structure of movable form,
Different surfaces may be incorporated for target and discharge the deposition of the plasma to be formed, be used for plasma relative to an only surface
Deposition barrier structure for, setting the barrier structure of movable form can increase the service life, reduce the replacement cycle, from
And improve the rate of transferring that magnetron sputtering apparatus uses.
Above-described is preferred embodiment of the present utility model, it should be pointed out that for the ordinary person of the art
For, some improvements and modifications can also be made under the premise of principle described in the utility model is not departed from, these are improved and profit
Decorations are also in the scope of protection of the utility model.
Claims (10)
- A kind of 1. magnetic control sputtering device, it is characterised in that including：For fixing the target bearing structure of target；For fixing the base plate carrying structure of ilm substrate to be plated；Multiple barrier structures, multiple barrier structures, which enclose, is set to a cavity, and the cavity is arranged at the target bearing structure Between the base plate carrying structure, be formed as in the target bearing structure target electric discharge caused by isoelectronic species be sputtered onto The passage of ilm substrate to be plated；The first barrier structure in wherein described barrier structure includes at least two working conditions, in different working condition, no With surface towards the inside of the cavity.
- 2. magnetic control sputtering device according to claim 1, it is characterised in that the magnetic control sputtering device also includes：Driving structure, it is connected with first barrier structure；Wherein described first barrier structure is overturn by the driving of the driving structure, is switched between different working condition.
- 3. magnetic control sputtering device according to claim 2, it is characterised in that the driving structure includes electric rotating machine, institute The rotary shaft that the first barrier structure is stated with the electric rotating machine is connected.
- 4. magnetic control sputtering device according to claim 2, it is characterised in that the quantity of the driving structure is two, point Opposite end not with first barrier structure is fixedly connected.
- 5. magnetic control sputtering device according to claim 1, it is characterised in that the magnetic control sputtering device also includes：Disposable box, it is arranged at the lower position of first barrier structure.
- 6. magnetic control sputtering device according to claim 1, it is characterised in that the ilm substrate to be plated and target difference For in vertical state, the different surfaces of first barrier structure towards the cavity inside when, each surface is in water Flat state upward.
- 7. magnetic control sputtering device according to claim 1, it is characterised in that first barrier structure is formed as tabular knot Structure, during the first working condition, first surface is towards the inside of the cavity；In the second working condition, first surface is relative Second surface is towards the inside of the cavity.
- 8. magnetic control sputtering device according to claim 1, it is characterised in that first barrier structure includes integrally connected Three plate portions, wherein the first plate portion is generally aligned in the same plane with the second plate portion, the 3rd plate portion with it is described First plate portion and second plate portion are in predetermined angle；In the first working condition, the 3rd plate portion with First plate portion forms a portion enclosed and set the cavity；In the second working condition, the 3rd plate-like portion Divide to form with second plate portion and enclose a portion for setting the cavity.
- 9. magnetic control sputtering device according to claim 1, it is characterised in that the quantity of first barrier structure is at least Two.
- A kind of 10. magnetron sputtering apparatus, it is characterised in that including vacuum cavity and be arranged in the vacuum cavity such as right It is required that the magnetic control sputtering device described in 1 to 9 any one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720526166.6U CN206706198U (en) | 2017-05-12 | 2017-05-12 | Magnetic control sputtering device and magnetron sputtering apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720526166.6U CN206706198U (en) | 2017-05-12 | 2017-05-12 | Magnetic control sputtering device and magnetron sputtering apparatus |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108277465A (en) * | 2018-01-29 | 2018-07-13 | 京东方科技集团股份有限公司 | Magnetron sputtering apparatus and its shutter component |
| CN108520859A (en) * | 2018-03-28 | 2018-09-11 | 武汉华星光电技术有限公司 | A kind of etching machines |
| CN113529028A (en) * | 2020-08-14 | 2021-10-22 | 友达光电股份有限公司 | Sputtering apparatus and method of operating the same |
-
2017
- 2017-05-12 CN CN201720526166.6U patent/CN206706198U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108277465A (en) * | 2018-01-29 | 2018-07-13 | 京东方科技集团股份有限公司 | Magnetron sputtering apparatus and its shutter component |
| CN108277465B (en) * | 2018-01-29 | 2020-03-10 | 京东方科技集团股份有限公司 | Magnetron sputtering equipment and shielding plate assembly thereof |
| CN108520859A (en) * | 2018-03-28 | 2018-09-11 | 武汉华星光电技术有限公司 | A kind of etching machines |
| CN108520859B (en) * | 2018-03-28 | 2020-11-06 | 武汉华星光电技术有限公司 | Etching equipment |
| CN113529028A (en) * | 2020-08-14 | 2021-10-22 | 友达光电股份有限公司 | Sputtering apparatus and method of operating the same |
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Granted publication date: 20171205 |