CN114481060A - ITO conductive film glass plate sputtering cavity structure - Google Patents
ITO conductive film glass plate sputtering cavity structure Download PDFInfo
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- CN114481060A CN114481060A CN202111590727.6A CN202111590727A CN114481060A CN 114481060 A CN114481060 A CN 114481060A CN 202111590727 A CN202111590727 A CN 202111590727A CN 114481060 A CN114481060 A CN 114481060A
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- 239000011521 glass Substances 0.000 title claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 210000005056 cell body Anatomy 0.000 abstract description 4
- 230000006378 damage Effects 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 33
- 239000013077 target material Substances 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides an ITO conductive film glass plate sputtering cavity structure which comprises a cavity, a driving device and a magnetic part which are arranged at the upper part of the cavity, a protective plate, a substrate and a target which are arranged in the cavity, and a low-temperature pump which is arranged on the side wall of the cavity, wherein the driving device is fixedly connected with the magnetic part, the protective plate is arranged between the substrate and the target, the cavity structure also comprises a transmission mechanism which drives the target to move left and right, the transmission mechanism comprises a rack and a gear which is meshed with the rack, and the target is fixedly connected with one side opposite to the rack. The target utilization rate is improved by installing the transmission mechanism, and the target utilization rate and the ITO glass coating efficiency are further improved by installing the vibration motor; through set up the cell body on the heating member, and install strutting arrangement on the cell body to and install fixing device in heating member both sides, can guarantee when fixed substrate completely, can also protect substrate integrality, avoid being scraped flower and destruction by fixed equipment.
Description
Technical Field
The invention relates to the technical field of detection of semiconductor processes, in particular to an ITO conductive film glass plate sputtering cavity structure.
Background
Magnetron sputtering is mainly used for preparing metal and metal compound films, and is widely applied to the field of semiconductors due to the advantages of high coating efficiency, good adhesion and the like. Magnetron sputtering bombards ionized inert gas ions on the surface of a cathode target through the combined action of an electric field and a magnetic field, so that the target is sputtered in the form of atoms or molecules and deposited on a substrate to form a film. In the prior art, many magnetron sputtering chamber structures are provided, for example, a magnetron sputtering chamber with application publication number CN111254403A for improving uniformity of a metal oxide film, and by adopting a chamber mixing air inlet device, a screen-shaped air distribution device and a rotating shaft, the problem of low oxygen concentration in a central region of the chamber is effectively solved, and uniformity of the metal oxide film is improved. However, the magnetron sputtering chamber structure has the following disadvantages: (1) in sputtering, magnetic lines of force are fixed and point to the middle magnetic pole from the magnetic poles on the two sides, more invalid sputtering areas are arranged in the middle of the target, positions with larger magnetic field intensity are sputtered, and at the moment, a large amount of residual quantity in the middle area of the target is wasted, so that the utilization rate of the target is low; (2) because the inner circular surface is provided with the circular holes and the circular holes have a plurality of intervals, the target material of atoms or molecules can fall on the intervals among the circular holes and can not be deposited on the substrate to form a film; (3) the substrate cannot be completely fixed on the heater by the base press ring, so that the substrate slides on the heater, and the surface of the substrate can be scratched or even damaged.
Disclosure of Invention
The invention aims to provide an ITO conductive film glass plate sputtering cavity structure which can improve the utilization rate of a target material and the film coating efficiency of ITO glass, can completely fix a substrate and simultaneously can not scratch or damage the substrate, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides a ITO conductive film glass plate material sputter cavity structures, includes the cavity, installs at drive arrangement and the magnetic part on cavity upper portion, installs backplate, substrate and target in the cavity are installed the cryopump of cavity lateral wall, drive arrangement and magnetic part fixed connection, the backplate install in between substrate and the target, cavity structures still removes drive mechanism including driving the target, drive mechanism include the rack, with rack toothing's gear, one side fixed connection of target and relative rack, the stopper has still been welded to the rack both sides, the stopper other end is connected with the slider, the slider inlays to be located in the slide, the slide is seted up and is fixed carriage release lever on the internal jade of cavity.
Preferably, install under the target and divide the gas device, divide the gas device upper and lower surface to set to the disc that has the mesh, it has the shock motor who is used for the drive to divide the gas device still to fixedly mounted on the interior wall of cavity, shock motor's delivery rod and tip welding have the first vibrations pole fixed connection of lug, divide the gas device through first screw rod fixedly connected with cassette one side that the gas device was kept away from to the cassette is seted up flutedly, lug and recess joint are used for fixed shock motor and cassette, one side fixed mounting keeping away from shock motor have with cassette fixed connection's second vibrations pole, the second vibrations pole is worn to establish the bearing and is connected with first outlet duct, the opposite side fixedly connected with second outlet duct of netted gas device that divides.
Preferably, a rotary table is fixedly mounted under the gas distribution device, a rotary shaft for driving the rotary table to rotate is fixedly mounted under the rotary table, a heating body is fixedly mounted above the rotary table, a groove body is formed in the upper portion of the heating body, and a supporting device for supporting the substrate is mounted on the groove body.
Preferably, the supporting device comprises a first sucker, a spring elastically connected with the first sucker, and a supporting block for supporting the spring, and fixing devices for fixing the substrate are installed on two sides of the heating body.
Preferably, the fixing device comprises a second sucker, a second screw rod connected with the second sucker and a handle fixedly connected with the second screw rod, a through hole matched with the second screw rod is formed in the heating body, and a nut used for fastening the side face of the substrate is connected to the second screw rod through threads.
Preferably, first outlet duct and second outlet duct are connected and are mixed the outlet duct, mix the gasbag that the outlet duct upper end sealing connection is used for the mist, gasbag both sides are first intake pipe of sealing connection and second intake pipe respectively, install the flow controller that control gas flows in respectively in first intake pipe and the second intake pipe.
Preferably, a shielding net and an upper polar plate are further arranged between the substrate and the gas distribution device, round holes are formed in the upper surface and the lower surface of the shielding net and the upper polar plate, a lower polar plate is sleeved on the rotating shaft, and the upper polar plate and the lower polar plate are connected with a power supply.
Preferably, the inner diameter of the circular hole is not less than the inner diameter of the mesh hole.
Compared with the prior art, the invention has the beneficial effects that:
the target material is moved in the left and right directions by installing a transmission mechanism and utilizing a mechanism of meshing a rack and a gear, all areas of the cathode target material bombarded by ionized inert gas ions are further improved in utilization rate of the target material, and the target material and the rack can be fixed on one hand and the meshing distance between the rack and the gear can be limited on the other hand by utilizing the matching of a limiting block and a sliding block; by installing the vibration motor, the target falling on the circular surface of the gas distribution device can fall onto the substrate, so that the utilization rate of the target and the coating efficiency of the ITO glass are further improved; through set up the cell body on the heating member, and the strutting arrangement who supports the substrate is installed to the cell body to and the fixing device who fixes the substrate is connected to heating member both sides, can guarantee when fixing the substrate completely, can also protect the substrate integrality, avoid being scraped flower and destruction by fixed equipment.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is an enlarged view of the structure at A of the present invention;
FIG. 3 is an enlarged view of the structure at B of the present invention;
FIG. 4 is a sectional view of the connection of the rack and the movable bar of the present invention;
FIG. 5 is a schematic view of a mesh structure of the gas distributor of the present invention;
fig. 6 is a schematic diagram of another implementation of fig. 1 of the present invention.
In the figure: 1 cavity, 2 driving devices, 3 magnetic parts, 4 protective plates, 5 substrates, 6 rotating discs, 7 cryogenic pumps, 8 targets, 9 transmission mechanisms, 10 racks, 11 gears, 12 limiting blocks, 13 sliding blocks, 14 sliding ways, 15 gas distribution devices, 16 vibration motors, 17 bumps, 18 first vibration rods, 19 first screw rods, 20 clamping seats, 21 grooves, 22 second vibration rods, 23 bearings, 24 first gas outlet pipes, 25 second gas outlet pipes, 26 rotating shafts, 27 heating bodies, 28 groove bodies, 29 supporting devices, 30 first suction cups, 31 springs, 32 supporting blocks, 33 fixing devices, 34 second suction cups, 35 second screw rods, 36 handles, 37 through holes, 38 screw caps, 39 mixed gas outlet pipes, 40 air bags, 41 first gas inlet pipes, 42 second gas inlet pipes, 43 flow controllers, 44 meshes, 45 moving rods, 46 shielding nets, 47 upper polar plates and 48 lower polar plates.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example (b):
referring to fig. 1 to 6, the present invention provides a technical solution:
an ITO conductive film glass plate sputtering cavity structure is shown in fig. 1 and comprises a cavity 1, a driving device 2 and a magnetic part 3 which are arranged on the upper portion of the cavity 1, a protection plate 4, a substrate 5 and a target material 8 which are arranged in the cavity 1, and a low-temperature pump 7 which is arranged on the side wall of the cavity 1, wherein the driving device 2 is fixedly connected with the magnetic part 3, the protection plate 4 is arranged between the substrate 5 and the target material 8, the substrate 5 is generally calcium-based or silicon-boron-based, and the target material 8 is indium and tin metal. In order to improve the utilization rate of the target material, the cavity structure further comprises a transmission mechanism 9 for driving the target material 8 to move left and right, the transmission mechanism 9 comprises a rack 10 and a gear 11 engaged with the rack 10, as shown in fig. 4, the target material 8 is fixedly connected to one side of the rack 10, the two sides of the rack 10 are welded with the limit blocks 12, the other end of the limiting block 12 is connected with a sliding block 13, the sliding block 13 is embedded in a slideway 14, the slideway 14 is arranged on a moving rod 45 fixed on the inner wall of the cavity 1, and by utilizing the meshing mechanism of a rack 10 and a gear 11 of the transmission mechanism 9, the target material 8 can be moved in the horizontal direction to ensure that the surface of the target material 8 can be bombarded by ionized inert gas ions, and by arranging the slide way 14 on the moving rod 45, and the slide block 13 is embedded in the slide way 14, so that the meshing distance between the rack 10 and the gear 11 can be limited besides the function of fixing the rack 10.
As shown in fig. 5, a gas distribution device 15 is installed right below the target 8, and the gas distribution device 15 has a flat cylindrical shape, and the upper and lower surfaces thereof are configured as circular surfaces having meshes 44. In order to further improve the target utilization rate and the coating efficiency of the ITO glass, a vibration motor 16 for driving the gas distribution device 15 is fixedly mounted on the inner wall of the cavity 1, as shown in fig. 2, a first vibration rod 18 fixedly connected with a convex block 17 is welded on the output rod of the vibration motor 16 and the end of the output rod, the gas distribution device 15 is fixedly connected with a clamping seat 20 through a first screw rod 19, one side of the clamping seat 20 far away from the gas distribution device 15 is provided with a groove 21, the convex block 17 and the groove 21 are clamped and connected with the fixed vibration motor 16 and the clamping seat 20, one side of the clamping seat 20 far away from the vibration motor 16 is fixedly provided with a second vibration rod 22 fixedly connected with the clamping seat 20, the second vibration rod 22 penetrates through a bearing 23 to be connected with a first gas outlet pipe 24, and the other side of the reticular gas distribution device 15 is fixedly connected with a second gas outlet pipe 25.
A rotary table 6 is fixedly arranged under the gas distribution device 15, a rotating shaft 26 used for driving the rotary table 6 to rotate is fixedly arranged under the rotary table 6, and a heating body 27 is fixedly arranged above the rotary table 6. In order to protect the integrity of the substrate and avoid scratching and damage by a fixing device, as shown in fig. 3, a groove 28 is formed in the upper portion of the heating body 27, a supporting device 29 for supporting the substrate 5 is mounted on the groove 28, the supporting device 29 includes a first suction cup 30, a spring 31 elastically connected to the first suction cup 30, and a supporting block 32 for supporting the spring 31, fixing devices 33 for fixing the substrate 5 are mounted on two sides of the heating body 27, the fixing devices 33 include a second suction cup 34, a second screw 35 connected to the second suction cup 34, and a handle 36 fixedly connected to the second screw 35, a through hole 37 matched with the second screw 35 is formed in the heating body 27, and a nut 38 for fastening the side surface of the substrate 5 is further connected to the second screw 36 through a thread.
In order to solve the problem that the regional oxygen concentration of cavity center is low, promote ITO conductive film's homogeneity, first outlet duct 24 and second outlet duct 25 are connected and are mixed outlet duct 39, mix outlet duct 39 upper end sealing connection and be used for the gasbag 40 of mist, gasbag 40 both sides are sealing connection first intake pipe 41 and second intake pipe 42 respectively, install the flow controller 43 that the control gas flows in on first intake pipe 41 and the second intake pipe 42 respectively, utilize the principle of mixing earlier and separating the ventilation again, not only can be through the flow of the required argon of flow controller 43 control and oxygen, can also carry the oxygen of less flow with the argon of great flow and get into the vacuum chamber body, with the help of the centripetal vector of great flow gas for the oxygen of less flow is changeed and is distributed to the cavity center.
As shown in fig. 6, a shielding net 46 and an upper polar plate 47 are further installed between the substrate 5 and the gas distribution device 15, the upper and lower surfaces of the shielding net 46 and the upper polar plate 47 are both provided with round holes, the rotating shaft 26 is sleeved with a lower polar plate 48, the upper polar plate 47 and the lower polar plate 48 are connected with a power supply, the inner diameter of the round holes is not smaller than the inner diameter of the mesh 44, through arranging the upper polar plate 47 and the lower polar plate 48, the upper polar plate 47 and the lower polar plate 48 are respectively connected with the positive/negative and negative/positive output ends of the high voltage electrostatic generator by wires to form an electric field, the generated ITO passes through the mesh 44 and the shielding net 46 and falls into the upper polar plate 47 to generate positive/negative charges, because the lower polar plate 48 generates negative/positive charges, the ITO can have great straightness and flight in the electric field, and vertically falls to the substrate 5 at a high speed, thereby improving the coating efficiency in the same time, meanwhile, the uniformity of the ITO film is improved.
The shielding net 46 of the invention can be a metal shielding net to prevent the influence on the work flow above the shielding net 46 or the generation of ITO, the purpose of the inner diameter of the round hole not less than the inner diameter of the mesh 44 is to make ITO pass through the mesh 44, quickly fall onto the shielding net 46 and the upper polar plate 47, and then fall onto the substrate 5, the lower polar plate 48 is set not to rotate along with the rotation of the rotating shaft 26,
the working principle of the ITO conductive film glass plate sputtering cavity structure is as follows:
firstly, the driving device 2 is started, the magnetic field is generated in the cavity 1 by utilizing the characteristic of the magnetic part 3, the rotating shaft 26 is driven by the motor to drive the rotating disc 6 and the substrate 5 to rotate, argon and oxygen are firstly introduced into the air bag 40 to be mixed, then the argon and the oxygen are respectively introduced into the gas distributing device 15 by utilizing the first gas outlet pipe 24 and the second gas outlet pipe 25, then under the action of an electromagnetic field, ionized argon ions bombard the surface of the cathode target 8 through the mesh 44, the target in the form of atoms or molecules is sputtered off, the target fixed on the rack 10 is translated left and right by utilizing the meshing action of the rack 10 and the gear 11, the whole target surface can be utilized, the sputtered indium tin molecules are combined with oxygen to generate ITO, an ITO film is deposited on the substrate 5 through the meshes 44 of the gas-distributing means 15, and the vibrating motor 16 is installed to drive the gas-distributing means 15 to vibrate ITO falling on the spaces between the meshes 44 onto the substrate 5.
By arranging the upper polar plate 47 and the lower polar plate 48, the ITO after passing through the gas distribution device 15 can fall to the substrate 5, the film coating efficiency is improved in the same time, and the uniformity of the ITO film is improved at the same time.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. The ITO conductive film glass plate sputtering cavity structure is characterized by comprising a cavity (1), a driving device (2) and a magnetic part (3) which are arranged on the upper portion of the cavity (1), a protection plate (4), a substrate (5) and a target (8) which are arranged in the cavity (1), a low-temperature pump (7) which is arranged on the side wall of the cavity (1), wherein the driving device (2) is fixedly connected with the magnetic part (3), the protection plate (4) is arranged between the substrate (5) and the target (8), the cavity structure further comprises a transmission mechanism (9) which drives the target (8) to move left and right, the transmission mechanism (9) comprises a rack (10) and a gear (11) which is meshed with the rack (10), the target (8) is fixedly connected with one side opposite to the rack (10), and limiting blocks (12) are welded on two sides of the rack (10), the other end of the limiting block (12) is connected with a sliding block (13), the sliding block (13) is embedded in a slide way (14), and the slide way (14) is arranged on a moving rod (45) fixed on the inner wall of the cavity (1).
2. The ITO conductive film glass plate sputtering cavity structure according to claim 1, wherein a gas distribution device (15) is installed right below the target (8), the upper and lower surfaces of the gas distribution device (15) are set to be circular surfaces with meshes (44), a vibration motor (16) for driving the gas distribution device (15) is further fixedly installed on the inner wall of the cavity (1), an output rod of the vibration motor (16) is fixedly connected with a first vibration rod (18) welded with a bump (17) at the end, the gas distribution device (15) is fixedly connected with a clamping seat (20) through a first screw rod (19), a groove (21) is formed in one side of the clamping seat (20) far away from the gas distribution device (15), the bump (17) and the groove (21) are clamped and used for fixing the vibration motor (16) and the clamping seat (20), a second vibration rod (22) fixedly connected with the clamping seat (20) is fixedly installed on one side far away from the vibration motor (16), the second vibration rod (22) is connected with the first air outlet pipe (24) through a bearing (23), and the other side of the reticular air distribution device (15) is fixedly connected with a second air outlet pipe (25).
3. The ITO conductive film glass plate sputtering cavity structure as claimed in claim 2, wherein a turntable (6) is fixedly mounted right below the gas distribution device (15), a rotating shaft (26) used for driving the turntable (6) to rotate is fixedly mounted below the turntable (6), a heating body (27) is fixedly mounted above the turntable (6), a groove body (28) is formed in the upper portion of the heating body (27), and a supporting device (29) used for supporting the substrate (5) is mounted on the groove body (28).
4. An ITO conductive film glass plate sputtering cavity structure according to claim 3, characterized in that said supporting device (29) comprises a first suction cup (30), a spring (31) elastically connected with the first suction cup (30) and a supporting block (32) for supporting the spring (31), and fixing devices (33) for fixing the substrate (5) are installed on two sides of the heating body (27).
5. The ITO conductive film glass plate sputtering cavity structure according to claim 4, wherein the fixing device (33) comprises a second suction cup (34), a second screw (35) connected with the second suction cup (34), and a handle (36) fixedly connected with the second screw (35), a through hole (37) matched with the second screw (35) is formed in the heating body (27), and a nut (38) used for fastening the side surface of the substrate (5) is further connected to the second screw (36) through threads.
6. The ITO conductive film glass plate sputtering cavity structure according to claim 2, wherein the first outlet pipe (24) and the second outlet pipe (25) are connected with a mixed outlet pipe (39), the upper end of the mixed outlet pipe (39) is hermetically connected with an air bag (40) for mixed gas, two sides of the air bag (40) are respectively hermetically connected with a first inlet pipe (41) and a second inlet pipe (42), and flow controllers (43) for controlling gas inflow are respectively installed on the first inlet pipe (41) and the second inlet pipe (42).
7. The ITO conductive film glass plate sputtering cavity structure according to claim 2, wherein a shielding net (46) and an upper polar plate (47) are further installed between the substrate (5) and the gas distribution device (15), round holes are formed in the upper surface and the lower surface of the shielding net (46) and the upper polar plate (47), a lower polar plate (48) is sleeved on the rotating shaft (26), and the upper polar plate (47) and the lower polar plate (48) are connected with a power supply.
8. An ITO conductive film glass plate sputtering chamber structure according to claim 7, wherein the inner diameter of the circular hole is not less than the inner diameter of the mesh (44).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111590727.6A CN114481060A (en) | 2021-12-23 | 2021-12-23 | ITO conductive film glass plate sputtering cavity structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115142027A (en) * | 2022-07-12 | 2022-10-04 | 广东鼎泰高科技术股份有限公司 | Cathode rod adjusting mechanism, control method thereof and arc spot scanning method |
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