CN103422066B - Sputtering method - Google Patents
Sputtering method Download PDFInfo
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- CN103422066B CN103422066B CN201310178846.XA CN201310178846A CN103422066B CN 103422066 B CN103422066 B CN 103422066B CN 201310178846 A CN201310178846 A CN 201310178846A CN 103422066 B CN103422066 B CN 103422066B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a sputtering method, which can effectively inhibit fluctuation generation of the film thickness distribution and the film quality distribution when sputtering a target to form a film. The method comprises: using the surface of each target 31-34 opposite to a substrate W as the upper surface, forming tunnel-shaped leakage magnetic fields M1 and M2 on the upper of each target by magnet units 41-44 configured on the lower of each target, in a sputtering process, to enable each magnet unit to synchronously perform reciprocating motion relative to the targets in an X direction and in a specified stroke, to enable the substrate to perform reciprocating motion relative to the targets in the X direction and in the specified stroke, and to enable each magnet unit and the substrate to move to the opposite directions, and setting time equation from a starting point to a return position of the reciprocating motion.
Description
Technical field
The present invention relates to a kind of sputtering method, substrate is oppositely arranged in the vacuum room for being provided with target by the method with target,
Sputter gas are imported into vacuum room, plasma is formed to target applying regulation electric power in vacuum room and target is sputtered,
The thin film of regulation is formed on the face relative with target of substrate.
Background technology
Method for regulation thin film is formed in the pending substrate surface such as glass, has one kind to be sputtering method（Call in the following text and " splash
Plating "）, the especially sputtering method of magnetic control mode is by with from being configured in target rear（Back to sputter face side）Magnet unit
The tunnel-like magnetic flux for sending, captures the electronics and the secondary electron by sputtering generation just ionized in face of the sputter of target, can increase
Big electron density in front of which, the gas of sputter gas for improving these electronics and being made up of the rare gas imported in vacuum room
The collision probability of molecule, increases plasma density.Therefore, have the advantages that to improve film forming speed, in recent years, as FPD gives birth to
The glass substrate for producing like that, is also commonly used in the film forming of the substrate big to area.
Herein, as the sputtering unit to large-area substrates film thickness distribution film forming well, it is known that Yi Zhong
By the target of the same shape many pieces of devices being set up in parallel at equal intervals in vacuum room.In the apparatus, due to not from target to each other
Region discharges sputter particle, once so the thin film of regulation is formed in substrate surface, then the thickness distribution and reactivity of thin film is splashed
Film quality distribution when penetrating rises and falls（The situation of such as film thickness distribution be in same period the thick part of film thickness and
Thin part occurs repeatedly）, easily become uneven.Film thickness distribution and film quality distribution like this occurs what is risen and fallen
Words, then can produce some problems, for example, form transparency electrode on the glass substrate（ITO）, when inclosure liquid crystal is fabricated to FPD,
Produce on display surface concavo-convex.
Therefore, it is known in sputter procedure, by making each target entirety and opposing substrate abreast stroke according to the rules
Carry out relative reciprocating motion and change the region for not discharging sputter particle, i.e., by discharging sputter grain with from target across the whole face of substrate
The region of son is relative, improves the uneven of above-mentioned film thickness distribution and film quality distribution.Now, it is further to improve thin film
Thickness distribution and the uniformity of film quality distribution, each magnet unit also do relative relative to substrate-parallel with regulation stroke
Move back and forth, change the position of the tunnel-like magnetic flux that sputtering yield is uprised（Referring for example to patent documentation 1）.Even if however, it has been discovered that
In the previous example, also cannot fully improve the distribution of the small film thickness in the whole face of substrate and rising for film quality distribution
Volt, in other words, judges that Local residues have the fluctuating of small film thickness distribution and film quality distribution.Therefore, the present invention
Inventor through research with keen determination repeatedly, draw understanding, as long as making target（Or substrate）Reciprocating motion and magnet unit it is past
Multiple motion is synchronous, so that it may effectively suppress film thickness distribution fluctuating and film quality to be distributed the generation for rising and falling.
Citation
Patent documentation
【Patent documentation 1】Patent discloses 2004-346388 publications（Referring for example to the record of patent claims）
The content of the invention
Problems to be solved by the invention
In view of the foregoing, the technical problem to be solved in the present invention is to provide a kind of sputtering method, and which is being sputtered to target
During with film forming, especially in multiple targets that sputtering is set up in parallel at predetermined intervals, effectively can suppress to produce film thickness point
Cloth and the fluctuating of film quality distribution.
Solve the means of technical problem
For solve above-mentioned technical problem, the present invention sputtering method it is characterized in that：Will in the vacuum room for be provided with target
Substrate is oppositely arranged with target, into vacuum room imports sputter gas, is applied electric power to target and is formed plasma simultaneously in vacuum room
Target sputtered, form thin film on the face relative with target of substrate, the opposite face side with target and substrate as upper, in target
Lower section, be set up in parallel multiple magnet units in the X-direction in a direction as the target at predetermined intervals, and pass through each magnetic
Ferrum unit forms tunnel-shaped stray field in the top of target, makes each magnet unit synchronously in X-direction to specify in sputtering
Stroke makees relative reciprocating motion to target, and makes stroke of the substrate in X-direction to specify make relative reciprocating motion to target, makes each
Magnet unit makees relative movement round about with substrate, and makes each magnet unit and substrate reach folding from reciprocating starting point
Time till returning position is identical.
According to the present invention, due to making each magnet unit and substrate make relative movement round about, and each magnet unit is made
Time till position of turning back being reached from reciprocating starting point with substrate is identical, so on the whole face of substrate becoming and releasing from target
The region for putting sputter particle is relative, and its result is will not to be distributed in the small film thickness distribution of Local residues and film quality
Rise and fall, effectively can suppress film thickness distribution and film quality distribution it is uneven.
In the present invention, arrange the target to be configured in X-direction to be set up in parallel multiple targets of same shape at equal intervals,
Arrange magnet unit it is corresponding respectively with each target, wherein the center distance of adjacent target preferably with the stroke and substrate of magnet unit
It is stroke and equal.Thus, it is changed into more uniformly relative in substrate entire surface from the region of target release sputter particle, one can be entered
Step effectively suppress film thickness distribution and film quality distribution it is uneven.In addition, in the present invention, it is so-called with same shape
The target of shape refers to that target shape is identical in plan view, and the thickness of each target also can be different from each other.
Description of the drawings
Fig. 1 is the generalized section of the structure of the sputtering unit for illustrating the present invention.
Fig. 2 is the profile of the II-II lines along Fig. 1.
Fig. 3（a）~（c）It is the schematic diagram for illustrating the substrate W and magnet unit for moving round about.
Fig. 4（a）Be illustrate invention experiment test result,（b）Be illustrate comparative experimentss 1 test result,（c）It is to illustrate
The chart of the test result of comparative experimentss 2.
Specific embodiment
Referring to the drawings, the multiple targets with same shape are disposed in parallel in sputter room at predetermined intervals, to
Target paired in the target being set up in parallel applies alternating electromotive force to carry out sputter and imports oxygen into sputter room to each target, in glass
The metal film that is made up of target is formed on the pending substrate such as substrate and the metal oxide film that formed by reactive sputter as a example by
To illustrate the sputtering unit SM of embodiments of the present invention.
As shown in Figures 1 and 2, the sputtering unit SM of magnetic control mode has the vacuum chamber 1 for constituting sputtering chamber 1a.Vacuum chamber 1
Wall on offer air vent 11, connection and the vacuum pumping hardware P phases such as rotary pump, turbomolecular pump on the air vent 11
Logical exhaustor 12, by evacuation in sputtering chamber 1a and can be maintained at the vacuum of regulation.On the wall of vacuum chamber 1, arrange
There is gas leading-in device 2.Gas leading-in device 2 passes through to be inserted with mass flow controller 21a, the gas tube 22a of 21b respectively,
22b is connected with the gas source outside figure, can import the sputter gas or reacting that the rare gas such as argon be constituted with certain flow
The reacting gas used when property sputter.In addition, as reacting gas, according to will on substrate W the thin film of film forming composition, make
With mixed gas comprising oxygen, nitrogen, charcoal, the gas of hydrogen, ozone, water or hydrogen peroxide or these gases etc..In the description below
In, the target in sputtering chamber 1a hereafter is relative with substrate W, with the direction from target towards substrate as " on ", with from substrate W towards target
Direction be D score, the direction being set up in parallel with target and magnet unit is as X-direction（It is left and right directions in Fig. 1）, it is orthogonal with this
Direction is illustrated for Y-direction.
Magnetic control sputtering plating electrode C is configured in the bottom of sputtering chamber 1a.Magnetic control sputtering plating electrode C is set with relative with sputtering chamber 1a
What is put is substantially in cuboid（Plan view is rectangle）4 targets 31～34Be separately positioned on each target target 31～34The magnetic of lower section
Ferrum unit 41～44.In addition, the number of the target being set up in parallel does not receive above-mentioned restriction, further, as target, can be using according to Si, Al
And its alloy, Mo and ITO etc. will on substrate W the composition of the thin film of film forming and the product produced in a known manner.Further,
Each target 31～34As long as there is in plan view same shape, and thickness can be with difference each other.
Each target 3 during spatter film forming1～34It is connected to by jointing materials such as indium and stannum and cools down the target 31～34Copper
Made by backing plate 31.And, by target 31～34It is connected on backing plate 31, with target 31～34For Jing dual-purposes in the state of upside
It is arranged in sputtering chamber 1a in vacuum-packed insulator 32.Now, target 31～34Above when constituting film forming by splashing hereafter
The sputter face 3a of the ion sputtering of plating gas.Further, each target 31～34It is configured in sputtering chamber 1a to Y-direction to match somebody with somebody at equal intervals
Sputter face 3a when putting, and being not used is in the same plane parallel with substrate W（With reference to Fig. 2）, the shape of each target is designed as
Overall dimensions of the gross area of each sputter face 3a being set up in parallel more than substrate W.
By target 31～34After being configured in sputtering chamber 1a, in each target 31～34Around, it is respectively configured the plate with opening 51
The shielding 5 of shape, the opening 51 and target 31～34Relatively.Each shielding 5 is, for example, that aluminum is made.Further, the target 3 being set up in parallel1～34
In 2 targets 3 adjacent to each other1With 32And 33With 34Paired respectively, paired target 31～34On be connected to from alternating current power supply E
Output Eo.And, the assigned frequency in film forming（Such as 1Hz～100kHz）Alternating electromotive force apply from alternating current power supply E respectively
To paired target 31～34On.
It is arranged respectively at below each backing plate 31（On the outside of sputtering chamber 1a）Magnet unit 41～44With same shape, such as with
One magnet unit 41As a example by illustrate, then magnet unit 41It is arranged in parallel with backing plate 31, with by enhancing magnet adsorption power
The support plate 41 that flat board made by magnetic material is constituted（Yoke）.Central magnet 42 and periphery Magnet 43 are provided with support plate 41
Change the polarity of target side, the central magnet 42 is configured to the centrage extended on the length direction in the support plate 41
On, the periphery Magnet 43 is configured to the periphery ring-type configuration above support plate 41, to surround around the central magnet 42.
Now, for example volume when central magnet 42 is scaled magnetization is placed around the periphery Magnet 43 around which and is scaled magnetization
When volume sum（Periphery Magnet:Centring magnet:Periphery Magnet=1:2:1（With reference to Fig. 1））Left and right.Thus, it is respectively formed at
Each target 31～34Top balance tunnel-shaped stray field M1, M2.In addition, central magnet 42 and periphery Magnet 43 are neodium magnets
The product Deng known to, these central magnets and periphery Magnet can be one, or may also be the Magnet of multiple prescribed volumes
Piece spread configuration.
The composition of support plate 41 is its overall dimensions circle less than the profile of target, each magnet unit 41～44By each support
Plate 41 is connected with the first mobile device 6.First mobile device 6 has feed screw 61, its be threaded in be respectively perpendicular it is outstanding
Hang on the nut part 41a below each support plate 41, and motor 62, which drives the feed screw 61 to revolve to both forward and reverse directions
Turn.And, once driving feed screw 61 to rotate, then correspond to each magnet unit in its direction of rotation 41～44It is overall in X-direction advising
The stroke S1 of constant speed degree and fixation is moved reciprocatingly at grade.In addition, as shown in figure 1, also feed screw 61 can be set
Put on base plate 63, and be sliding freely engaged in the Y direction across target 41 long side direction total length horizontal extension left and right
On a pair track segment 64R, 64L, and by the slider bar 65R with drive motor (not shown), 65L keeps.And, also may be used
Make two slider bar 65R, 65L synchronous to Y-direction movement, then make each magnet unit 41～44Entirety with fixing speed and is consolidated in the Y direction
Fixed stroke is moved reciprocatingly at grade.Thus, make repeatedly each magnet unit 41～44Starting point from regulation is to Magnet list
Unit 41～44It is pointed to its target 3 immediately above1～34Relatively move the return starting point.
Further, the top in vacuum chamber 1, is provided with stand 7, which keeps substrate W and the target 3 being set up in parallel1～34Phase
It is right.On stand 7, be provided with recessed recess 71 corresponding with the profile of substrate W, below the recess 71 on, be formed with base
Below plate W（Film forming face）With target 31～34Relative central opening 72.Further, on stand 7, being connected with the second mobile device
8.Second mobile device 8 has feed screw 81, and which is threadedly coupled with the nut part 73 being arranged on below stand 7, insertion
The side wall of vacuum chamber 1, and motor 82, which drives the feed screw 81 to rotate to both forward and reverse directions.And, once drive feeding spiral shell
Bar 81 rotates, then corresponding to its direction of rotation makes stand 7, and then makes substrate W exist with the stroke S2 of fixing speed and fixation in X-direction
Move reciprocatingly on same plane.Now, make adjacent target 31～34Center distance（Also known as " cathode spacing "）Dt is equal to each magnetic
Ferrum unit 41～44Stroke S1 and substrate W stroke S2's and.
Then, the film forming procedure of the sputtering method with above-mentioned sputtering unit SM is further illustrated with reference to Fig. 3.First, by substrate W
After on stand 7, authorized pressure will be evacuated down in sputtering chamber 1a.Now, stand 7 such as Fig. 1 and Fig. 3（a）It is shown, it is located at
Reciprocating right-hand member start position, further, each magnet unit 41～44Positioned at reciprocating left end start position.And, lead to
Sputter gas and reacting gas that gas leading-in device 2 imports regulation are crossed, by alternating current power supply E to paired each target 31～34Point
Alternating electromotive force is not applied.Thus, 2 paired targets 31With 32And 33With 34The effect of anode and negative electrode is played, in each target 31～34
Top, form tunnel-shaped stray field, generation is changed into the highly dense of the track type of 0 position by the vertical component of the stray field
The plasma of degree.In such as Fig. 3（a）On shown start position, as stray field is formed in target 31～34Left part it is upper
Side, so target 31～34Left part be sputtered respectively.And each target 31～34The sputter build-up of particles of release is attached to relatively
Substrate W surface on.
In sputtering process, each magnet unit 4 is made by the first mobile device 61～44Start position from left end is to right-hand member
Position movement of turning back, in the other end, stand 7 is made by the second mobile device 8 so that make substrate W from the start position of right-hand member to
The position movement of turning back of left end.Such as Fig. 3（b）It is shown, when the centre position that substrate W is located at left end and right-hand member, each magnet unit
41～44It also is located at the centre position of left end and right-hand member.Substrate W like this and each magnet unit 41～44Both sides are respectively positioned on interposition
When putting, due in each target 31～34The top of middle body forms stray field, so target 31～34Middle body by sputter, from this
The sputter particle of middle body release is attached in relative substrate W surface.And, such as Fig. 3（c）Shown substrate W is located at reciprocal
The position of turning back of passage（Left position）When, each magnet unit 41～44It also is located at reciprocating position of turning back（Right end position）.
Now, due in each target 31～34The top of right part forms stray field, so target 31～34Right part by sputter, from this
The sputter particle of right part release is attached in relative substrate W surface.
Hereafter, each magnet unit 41～44Move from the position of turning back of right-hand member to the start position of left end, in the other end, base
Plate W is moved from the position of turning back of left end to the start position of right-hand member.
Magnet unit 4 is made like this1～44Moved with substrate W in the opposite direction, now, setting translational speed is made from past
Time till the starting point of multiple motion reaches position of turning back is equal.And, repeat the operation, and from target 31～34Sputter
Particle（While reaction with reacting gas）Attachment is deposited in substrate W surface, forms the thin film of regulation.
According to the above, due to making magnet unit 41～44Moved with substrate W round about, arranged from reciprocating motion
Starting point reach that the time turned back till position is equal, so be changed into whole surface across substrate W with from target 31～34Release is splashed
The region of plating particle is equably relative（It is changed into the whole surface irradiation plasma across substrate W）, its result is will not be
The small film thickness distribution of Local residues and the fluctuating of film quality distribution, can effectively suppress film thickness distribution and thin film
Mass Distribution it is uneven.
Further, the stroke of the stroke S1 and substrate W by pinwheel space D t to be equal to magnet unit as described above
The sum of S2, makes from each target 31～34The region of release sputter particle is more uniformly relative across the whole surface of substrate W, can be entered
One step effectively suppress film thickness distribution and film quality distribution it is uneven.
To confirm the effect above, the next experiment of the use sputter equipment SM shown in Fig. 1 has been carried out.In this experiment,
Using product made by ITO as target 31～34, it is generally rectangular to be formed as identical plan view, is connected with backing plate 31.
Further, using the product of the overall dimensions with 130mm × 1300mm as magnet unit 41～44Support plate 41, at each
Hold1～34Long side direction bar-shaped central magnet 42 and the periphery magnetic along the periphery of support plate 41
Ferrum 43.
And, as substrate W, using the glass substrate of so-called 8.5th generation flat faced display, further, sputtering conditions
For, the pressure in the sputtering chamber 1a of vacuum exhaust is maintained at into 0.3Pa, mass flow controller 21a, 21b is controlled, using as
The argon and water vapor gas of sputter gas is imported in sputtering chamber 1a, to target 31～34Apply the applying electric power of 15kW（Alternating current
Pressure）, sputter is carried out with this.In addition, arranging substrate W and target 31～34Between distance be 216mm.
In invention experiment, magnet unit 4 is made in above-mentioned sputter1～44With stand 7, and then with substrate W to contrary side
To movement, make the time from the starting point for moving back and forth to position of turning back equal.Now, make adjacent target 31～34Center
Space D t（=250mm）Equal to magnet unit 41～44Stroke S1（=84mm）With the stroke S2 of substrate W（=166mm）Sum,
By magnet unit 41～44Translational speed be set to 14.8mm/sec, by stand 7（Substrate W）Translational speed be set to 47.88mm/
sec.Ito thin film to the film forming in invention experiment, measures the reflectance of the light of the wavelength region to 300～800nm, its measurement
As a result such as Fig. 4（a）It is shown.If the left side of substrate W（Above-mentioned reciprocating starting point side）End be zero, measurement position is set to
The position of 0mm, 100mm, 200mm, 300mm, 400mm.The inner evenness of the reflectance of measurement is 0.61%, it was demonstrated that can be effective
Ground suppresses the generation that film thickness distribution and film quality distribution rise and fall.
In the comparative experimentss 1 of relative the invention described above experiment, in above-mentioned sputter, fixed substrate W is not moved it, and is made
Magnet unit 41～44Moved reciprocatingly with the speed of 14.8mm/sec.It is identical with foregoing invention experiment, in this comparative experiments 1
The measurement result of the reflectance of the ito thin film of film forming such as Fig. 4（b）It is shown.The inner evenness of reflectance as little as 1.12%, it was demonstrated that
Film thickness distribution and film quality skewness.
In another comparative experimentss 2, in above-mentioned sputter, substrate W and magnet unit 4 are made1～44Both sides move, but
These substrates W and magnet unit 4 are not made1～44It is synchronous.Both are not only made also to make both in the opposite direction to identical direction
It is mobile.It is identical with the invention described above experiment, test result such as Fig. 4 of the reflectance of the ito thin film that this comparative experiments 2 are obtained（c）
It is shown.Understand reflectance inner evenness be 0.74%, compared with comparative experimentss 1, although inner evenness increases, but
Compared with present invention experiment, inner evenness is reduced.The fluctuating of film thickness distribution and film quality distribution can be also produced now.
More than, the magnet controlled sputtering unit SM of embodiments of the present invention is illustrated, but the present invention and not only limit
In aforesaid way.In the above-described embodiment, said as a example by the reciprocating motion substrate W of stand 7 is set in vacuum chamber 1
It is bright, but be direct insertion device for example in sputter equipment SM, using carrier by the position relative with target of board carrying to vacuum chamber
When putting, in sputtering can also make the carrier reciprocating.
Further, in the above-described embodiment, to be arranged side by side multiple targets, exchange is applied to paired target by alternating current power supply
It is illustrated as a example by electric power, it is not limited to this, the present invention may also apply to target is by 1 situation about constituting.Target is one
When, there is no gap as shown in above-mentioned embodiment between target.For this purpose, need to prevent backing plate 31 from paradoxical discharge being occurred by sputter, such as
Fig. 3（a）It is shown, although not make magnet unit 4 without the need for arranging1～44Mobile region Dm, but there is the region for some reasons
During Dm, the present invention can also be highly suitable for the situation.
Further, the present invention may also apply to applying the situation of direct current power by D/C power.Further, circular and Magnet list
Unit is also suitable the present invention by the situation that center of rotation rotates of the center of target.
Description of reference numerals
SM ... sputter equipments, 1a ... sputtering chamber, 31～34... target, 41～44... magnet unit, 5 ... suspension shieldings, 6 ... are moved
Dynamic device, E ... alternating current power supplys, M1, M2 ... stray field, W ... substrates.
Claims (2)
1. a kind of sputtering method, it is characterised in that：
Substrate is oppositely arranged with target in the vacuum room for being provided with target, sputter gas is imported into vacuum room, apply electricity to target
Power in vacuum room forms plasma and target is sputtered, the film forming on the face relative with target of substrate；
Relative surface side with target and substrate as upper, below target between regulation in the X-direction in a direction as the target
Every being set up in parallel multiple magnet units, and tunnel-shaped stray field is formed in the top of target by each magnet unit；
In sputtering, make the overall stroke in X-direction to specify of each magnet unit make relative reciprocating motion to target, and make substrate
Relative reciprocating motion is made with the stroke for specifying to target in X-direction；
Make each magnet unit and substrate make relative movement round about, and make each magnet unit and substrate from reciprocating
Time till point reaches position of turning back is identical.
2. sputtering method according to claim 1, it is characterised in that：
Arrange the target to be configured in X-direction to be set up in parallel multiple targets of same shape at equal intervals, arrange magnet unit with
Each target is corresponded to respectively,
The center distance of adjacent target is made equal to the sum of the stroke of the stroke and substrate of magnet unit.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012115318A JP5875462B2 (en) | 2012-05-21 | 2012-05-21 | Sputtering method |
| JP2012-115318 | 2012-05-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103422066A CN103422066A (en) | 2013-12-04 |
| CN103422066B true CN103422066B (en) | 2017-04-12 |
Family
ID=49647445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310178846.XA Active CN103422066B (en) | 2012-05-21 | 2013-05-15 | Sputtering method |
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| KR101642188B1 (en) * | 2014-08-19 | 2016-07-22 | 재단법인 하이브리드 인터페이스기반 미래소재 연구단 | Jig system with playing torsion angle for uniform deposition of structural article |
| CN104213093B (en) * | 2014-09-23 | 2016-08-24 | 电子科技大学 | A kind of substrate motion method improving magnetron sputtering rectangular target thickness evenness |
| JP6608615B2 (en) * | 2015-05-18 | 2019-11-20 | 株式会社アルバック | Positive electrode active material film and film forming method |
| EP3438323B1 (en) | 2016-03-29 | 2021-10-13 | ULVAC, Inc. | Film-forming apparatus and film-forming method |
| WO2017203844A1 (en) * | 2016-05-23 | 2017-11-30 | 株式会社アルバック | Film-forming method and sputtering apparatus |
| CN106591787B (en) * | 2016-11-17 | 2019-04-09 | 燕山大学 | A kind of preparation method of gradient thickness patterned film |
| JP7007457B2 (en) * | 2018-03-16 | 2022-01-24 | 株式会社アルバック | Film formation method |
| JP6997877B2 (en) * | 2018-08-27 | 2022-02-10 | 株式会社アルバック | Sputtering equipment and film formation method |
| CN112553583B (en) * | 2019-09-25 | 2023-03-28 | 亚威科股份有限公司 | Sputtering apparatus and sputtering apparatus control method |
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| CN1572900A (en) * | 2003-05-23 | 2005-02-02 | 株式会社爱发科 | Sputter source, sputtering device, and sputtering method |
| CN101528972A (en) * | 2006-10-24 | 2009-09-09 | 株式会社爱发科 | Thin film forming method and thin film forming device |
| CN101861410A (en) * | 2008-01-21 | 2010-10-13 | 株式会社爱发科 | Sputtering film forming method and sputtering film forming apparatus |
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| JP4721878B2 (en) * | 2005-11-22 | 2011-07-13 | キヤノンアネルバ株式会社 | Sputtering equipment |
| JP4707693B2 (en) * | 2007-05-01 | 2011-06-22 | 株式会社アルバック | Sputtering apparatus and sputtering method |
| JP5291907B2 (en) * | 2007-08-31 | 2013-09-18 | 株式会社アルバック | Sputtering equipment |
| JP5493467B2 (en) | 2009-05-22 | 2014-05-14 | 日本電気株式会社 | Display device and electronic device |
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| CN101528972A (en) * | 2006-10-24 | 2009-09-09 | 株式会社爱发科 | Thin film forming method and thin film forming device |
| CN101861410A (en) * | 2008-01-21 | 2010-10-13 | 株式会社爱发科 | Sputtering film forming method and sputtering film forming apparatus |
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