200538569 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於一種濺鍍方法及濺鍍裝置，尤其是關於 一種以磁控管濺鍍（M a g n e 11· ο n s p u 11 e r i n g )方式將預定薄 膜成膜在處理基板上的濺鍍方法及濺鍍裝置。 【先前技術】 在磁控管濺鍍方式中，係將交互改變極性且由複數個 磁鐵構成的磁鐵組裝體配置於靶材（target )後方，藉由 該磁鐵組裝體而在靶材前方形成隧道狀磁通，以藉由捕捉 在靶材前方經電離的電子及因濺鍍所產生的二次電子，來 提高在靶材前方的電子密度，且提高這些電子與導入真空 室內之鈍性氣體的氣體分子的撞擊機率，而可提高電漿密 度。因此，具有可提高成膜速度等的優點，經常被利用在 形成預定薄膜在處理基板上方面。 另一方面，在磁控管濺鍍方式中，當將磁鐵組裝體的 位置予以固定時，電漿密度會局部變高，因濺鍍所產生的 靶材侵蝕區域（erosion area)係僅集中在電漿密度較高的 部分，而無法均勻侵飩靶材，而產生非侵蝕區域。此時， 靶材的利用效率較低，而且，非侵蝕區域會形成引起微粒 (particle)的原因。 作爲解決上述問題的方法，例如，已提案出一種方法 係在成膜期間，使設在形成爲矩形之靶材後方的磁鐵組裝 體，以與靶材平行且等速進行往返運動，同時’以使在各 -5- 200538569 (2) 處理基板的成膜速度爲固定的方式來控制施加至靶材的電 壓，藉此均勻地侵蝕靶材，以提高其利用效率（例如專利 文獻1 )。 〔專利文獻1〕日本專利特開平7 - 1 8 4 3 5號公報（例 如申請專利範圍的記載） 【發明內容】 •(發明所欲解決之課題） 然而，在成膜期間，當連續使磁鐵組裝體移動時，靶 材前方的電漿將隨之搖動，而伴隨易產生異常放電的問題 。當產生異常放電時，附著在基板的薄膜膜厚無法均勻完 成，而且，使用活性氣體來使靶材材料與氣體反應而形成 化合物薄膜的濺鍍中，膜質亦無法均一。 因此，本發明的課題係鑑於上述問題點，而提供一種 即便使靶材均勻侵蝕以使利用效率提高，亦可抑制異常放 ® 電產生的濺鍍方法及其裝置。 (用以解決課題之手段） 爲解決上述課題，本發明之磁控管濺鍍方法係將處理 基板依序搬送至與配置於真空室內之靶材相對向的位置， 於該靶材的前方形成磁通，同時在靶材與處理基板之間形 成電場，使得產生電漿而對靶材進行濺鍍，藉此在處理基 板上成膜的濺鍍方法，其特徵爲，當在處理基板上的成膜 完成’而將下一個處理基板搬送至與靶材相對向的位置時 -6 - 200538569 (3) ，使前述磁通相對於靶材作平行移動並予以保持’且在該 狀態下成膜。 根據本發明，當在處理基板上的成膜完成之後’將下 一個處理基板搬送至與靶材相對向的位置時，使磁通相對 於靶材作平行移動並予以保持。然後，對靶材施加電壓， 而在靶材前方使得產生電漿而對靶材進行濺鍍，藉此在處 理基板上成膜。 此時，僅在成膜期間使磁通的位置固定，因此，靶材 前方的電漿不會發生搖動，而可抑制異常放電的產生。因 此，附著在處理基板的薄膜膜厚得以均勻，同時，膜質亦 得以均一。此外，當在處理基板上的薄膜形成完成之後， 將下一個處理基板搬送至與靶材相對向的位置時，由於改 變磁通的位置，因此，因濺鍍而對靶材造成的侵蝕區域會 發生變動，而可均勻侵蝕靶材，以提高利用效率。 其中，至少在2個部位的位置之間，間歇性地進行前 述磁通的平行移動，俾於前述靶材全面可均等地獲得侵蝕 區域爲宜。 此外，每搬送處理基板至與前述靶材相對向的位置， 即進行前述磁通的平行移動爲宜。 本發明之磁控管濺鍍裝置係設置有：在真空室內具有 靶材，且將由複數個磁鐵構成的磁鐵組裝體配置於靶材後 方’以使磁通形成於靶材前方，同時將處理基板依序搬送 至與靶材相對向之位置的基板搬送手段的濺鍍裝置，其特 徵爲，設有驅動手段，係當在處理基板上的成膜完成，而 -7- 200538569 (4) 將下一個處理基板搬送至與靶材相對向的位置時，驅動前 述磁鐵組裝體，以使前述磁通相對於靶材作平行移動並予 以保持。 此時，亦可將前述靶材設爲複數，且在各靶材後方至 少配置1個磁鐵組裝體。 此外，前述驅動手段若爲氣缸或不需要進行控制的電 動機，則以低成本即可完成。 此外，本發明之其他濺鍍裝置係具備：於真空室內隔 著預定間隔並列設置的複數個靶材；分別設置於各靶材後 方，以使磁通分別形成於各靶材前方，且由複數個磁鐵構 成的磁鐵組裝體；以及對各靶材交互施加負電位及接地電 位或正電位之任一者的交流電源，而且設有驅動手段，用 以一體驅動各磁鐵組裝體，以使前述磁通相對於靶材作平 行移動並予以保持。 藉此方式，透過交流電源，對並列設置的靶材中的任 一者施加負電位時，施加有接地電位或正電位的靶材具有 陽極的功能，因此，該被施加負電位的靶材受到濺射，且 對應交流電源的頻率，來交互切換靶材的電位，藉此使各 靶材受到濺鍍。此時，一面間歇性地使磁通相對於靶材作 平行移動並予以保持，一面改變磁通位置，藉此使因濺鍍 而對靶材造成的侵蝕區域發生變動’而可均勻侵蝕靶材’ 以提高利用效率。 藉此方式，並不需要設置任何陽極或屛蔽（shield ) 等構件，因此，可儘可能減小不釋出濺鍍粒子的空間，而 -8- 200538569 (5) 且當成膜在處理基板時，可使處理基板 致均勻，同時，使膜質亦得以均一。 此時，具備依序搬送處理基板至與 之位置的基板搬送手段，且當在處理基 而將下一個處理基板搬送至與靶材相對 由該驅動手段來一體驅動各磁鐵組裝體 成膜期間使磁通的位置固定，因此，靶 ^ 發生搖動，而可抑制異常放電的產生， 小該不釋出濺鍍粒子的空間，因此即便 理基板時，亦可使處理基板面內的膜厚 時，使膜質亦得以均一。 但是，如上所述，當並列設置靶材 此之間的間隔亦會變小，有時會產生在 磁鐵相互接近而產生磁場干擾的情形。 位的磁通密度變高，而使磁場失衡。因 ^ 述複數個磁鐵組裝體時，最好設置磁通 使各磁鐵所形成磁通密度沿著該並列設 致均一。 此時，前述磁通密度修正手段係爲 磁鐵組裝體兩側的輔助磁鐵，若藉由前 鐵組裝體一體平行移動，則以簡單的構 度沿著該並列設置方向而設定爲大致均- (發明的效果） 面內的膜厚分布大 前述各靶材相對向 板上的成膜完成， 向的位置時，若藉 時，由於可以僅在 材前方的電漿不會 而且，可儘可能減 成膜在大面積的處 分布大致均勻，同 時，磁鐵組裝體彼 同方向相同極性的 此時，僅有在該部 此，當並列設置前 密度修正手段，以 置方向而設定爲大 設置於並列設置之 述驅動手段而與磁 造，即可使磁通密 -9 - 200538569 (6) 如以上之6兌明’本發明之濺鑛方法及濺鍍裝置係亘有 即便使靶材均勻侵蝕以使利用效率提高，亦可抑制異常放 電產生的效果。 【實施方式】 參照第1 .圖，1係第1實施形態之磁控管方式的縣鍍 裝置（以下稱爲「灘鍍裝置」）。職鍍裝置1係爲線內式 • (in-line)濺鍍裝置，具有藉由旋轉式泵（rotary pump) 、渦輪分子栗（turbo molecular pump)等真空排氣手段（ 未圖式），而保持在預定真空度的濺鍍室1 1。在濺鍍室 1 1的上部設有基板搬送手段2。該基板搬送手段2係具有 公知的構造，例如具有裝設有處理基板S的載座（carrier )2 1，使未圖示之驅動手段間歇性驅動，而將處理基板s 依序搬送至與後述之靶材相對向的位置。 此外，在濺鍍室Π設有氣體導入手段3。氣體導入手 ^ 段3係介由隔設有質流控制器（Mass Flow Controller ) 3 1 的氣體管3 2而與氣體源3 3相連通，氬等濺鍍氣體或用於 反應性濺鍍時的氧等反應氣體可以一定流量導入濺鍍室1 1 內。濺鍍室1 1的下側配置有陰極組裝體4。 陰極組裝體4係具有例如大致呈長方柱體的靶材4 1。 靶材41係按照A1合金或Mo等欲成膜在處理基板S上的 薄膜組成，而以公知的方法所製成。靶材4 1係接合在當 濺鍍時用以將該靶材41予以冷卻的底板（backing plate ) 4 2，而底板4 2係隔著絕緣板4 3而安裝在陰極組裝體4的 -10- 200538569 (7) 框架44。 在陰極組裝體4復在靶材4 1後方設有磁鐵組裝體45 。磁鐵組裝體45具有與靶材41平行配置的支持部45a， 在該支持部45a上，設置有交互改變極性而且隔著預定間 隔的3個磁鐵4 5 b、4 5 c。藉此方式，在靶材4 1前方形成 閉迴路（Close Loop )的隧道狀磁通Μ，藉由捕捉在靶材 41前方經電離的電子及因濺鍍所產生的二次電子，來提高 在靶材41前方的電子密度，而可提高電漿密度。 一般而言，靶材4 1的外形尺寸係設定地比處理基板 S的外形尺寸大，因此，當處理基板S變大時，靶材41 的外形尺寸也會變大。此時，在靶材41後方，隔著預定 間隔並列設置有複數個磁鐵組裝體 45。此外，當處理基 板S的外形尺寸較大時，在濺鍍室11中配置複數個陰極 組裝體4。 藉由驅動手段來間歇性驅動載座2 1，而將處理基板S 依序搬送至與靶材41相對向的位置，再介由氣體導入手 段3來導入預定的濺鍍氣體。當對靶材41透過濺鍍電源 Ε施加負的直流電壓或高頻電壓時，形成垂直於處理基板 S及靶材4 1的電場，且在靶材4 1前方產生電漿而使靶材 41受到濺鍍，藉此成膜在處理基板SI。 在此，如第1圖、第2圖（a)及第2圖（b)所示，將3 個磁鐵45b、45c以交互改變極性且隔著預定間隔的方式 所構成的磁鐵組裝體 45的位置予以固定時，由於在各磁 鐵45b、45c彼此之間形成隧道狀磁通Μ，所以中央部的 -11 - 200538569 (8) 磁鐵45b上方的電漿密度會變低。此時，因濺鍍所引起的 靶材4 1侵蝕區域由於形成隧道狀磁通Μ，而僅集中在電 漿密度變高的部分，而使位在電漿密度變低之中央部的磁 鐵4 5 b上方的部分殘留下來作爲非侵蝕區域U。 此時，靶材4 1的利用效率變低，而且非侵蝕區域u 會形成引起微粒（particle )的原因。因此，使磁鐵組裝 體 45在A點與B點之間平行移動，而改變隧道狀磁通Μ ^ 的位置時，雖可均勻侵鈾靶材4 1以提高其利用效率，但 是此時必須抑制異常放電的產生。 因此，在本實施形態中，在磁鐵組裝體 4 5設置作爲 驅動手段的氣缸46，在沿著靶材4 1之水平方向的2個部 位的位置（Α點、Β點）之間使磁鐵組裝體 4 5平行移動 ，且得以在各位置予以保持。 接著，當安裝於載座21之處理基板S上的成膜完成 ，即停止對靶材4 1施加負的直流電壓或高頻電壓，在暫 ® 時停止放電之後，將下一個載座2 1上的處理基板S搬送 至與¥E材4 1相對向的位置時，即驅動氣缸4 6，而使磁鐵 組裝體 4 5，亦即使隧道狀磁通Μ從A點平行移動到B點 ，並予以保持。此時，亦可在對至少安裝於下一個載座2 1 之處理基板S進行成膜之前，將磁鐵組裝體 4 5從A點平 行移動到B點。 當安裝在下一個載座2 1之處理基板S被搬送到與靶 材4 1相對向的位置時，即再度對靶材4 1施加負的直流電 壓或高頻電壓，且在靶材4 1前方產生電漿而使靶材4 1受 -12- 200538569 (9) 到濺鍍，藉此進行成膜。然後，當安裝在下-之處理基板S被搬送到與靶材4 1相對向的位 動氣缸4 6而使磁鐵組裝體 4 5從B點再度平 點，並予以保持，且以上述步驟來進行成膜。 行該操作，而在依序進行搬送的處理基板S上 .此時，藉由氣缸46而使磁鐵組裝體 45 移動，最好係由基板搬送手段2每搬送安裝在 ^ 處理基板S至與靶材4 1相對向的位置時進行。 藉此方式，僅在成膜期間將隧道狀磁通Μ 固定，藉此可使靶材4 1前方的電漿不會搖動 異常放電的產生。因此，可使附著在處理基板 厚得以均勻，同時亦可使膜質得以均一。此外 基板S上的成膜完成之後，將下一個處理基板 靶材4 1相對向的位置時，將改變隧道狀磁通 所以使得因濺鍍而對靶材4 1造成的侵蝕區域 而可均勻侵蝕靶材4 1，以提高利用效率。 此外，由於使用氣缸4 6，與一面控制速度 一面藉由電動機來驅動磁鐵組裝體 4 5者相較 較低。而且，只要適當設定氣缸46的氣壓， 使磁鐵組裝體 45移動。 此外，在本第1實施形態中，雖就在靶材 置1個磁鐵組裝體 4 5的情形加以說明，但若 並列設置複數個磁鐵組裝體 45時，亦可藉由 驅動各磁鐵組裝體 4 5。藉此可降低成本。 -個載座2 1 :置時，即驅 行移動到A 藉由反覆進 進行成膜。 進行的平行 ί載座21的 的位置予以 ，而可抑制 S的薄膜膜 ，當在處理 S搬送至與 Μ的位置， 發生變動， 或位置等， 之下，成本 即可在瞬間 4 1後方設 以預定間隔 1個氣缸來 -13- 200538569 (10) 在本實施形態中，雖就採用氣缸4 6的情形加以說明 ，但若可在至少2點位置將磁鐵組裝體 4 5迅速變更位置 的話，即不限於此，而可使用不需要對於例如位置或速度 等進行控制的電動機。 此外，在本實施形態中，雖係就線內式（i η -1 i n e )濺 .鍍裝置1進行說明，但並非侷限於此，只要是例如：由搬 送室、及與該搬送室相連結的濺鍍室所構成，且由設在搬 ^ 送室的搬送機器人來搬送處理基板的濺鍍裝置等之依序將 處理基板S搬送至與靶材4 1相對向的位置者，亦可適用 本發明之濺鍍方法。 參照第3圖，1 0係第2實施形態之濺鍍裝置。濺鍍裝 置1 0係爲使用後述之複數片祀材的線內式（i η -1 i n e )濺 鍍裝置，具有藉由旋轉式栗（r o t a r y p u m p )、渦輪分子栗 (turbo molecular pump)等真空排氣手段（未圖式），而 保持在預定真空度的濺鍍室1 1 0。在濺鍍室1 1 0的上部配 ® 置有處理基板S ’且藉由與上述第1實施形態相同的基板 搬送手段（未圖示），可將處理基板S依序搬送至與後述 之各靶材相對向的位置。 此外，在濺鍍室1 1 0設有氣體導入手段3 0。氣體導入 手段30係介由隔設有質流控制器（Mass Flow Controller )30a的氣體管30b而與氣體源30c相連通，氬等濺鍍氣 體或用於反應性濺鍍時的氧等反應氣體可以一定流量導入 濺鍍室Π 〇內。濺鍍室1 1 0的下側配置有陰極組裝體40。 陰極組裝體4 0係具有形成爲大致呈長方柱體等相同 -14- 200538569 (11) 形狀的6片靶材4 1 0 a至4 1 0 f。各靶材4 1 0 a至4 1 0 f係按 照A1合金、Mo或ITO等欲成膜在處理基板S上的薄膜組 成’而以公知的方法所製成，且接合在冷卻用的底板（ backing plate)(未圖示）。各靶材410a至410f中，將 其未使用時的濺鍍面4 1 1並列設置成位在與處理基板S平 行的同一平面上，且各靶材410a至41 Of相對向的側面 4 1 2彼此之間並不設置任何陽極或屏蔽等構件。此時，靶 ® 材4 1 0a至4 1 Of彼此的間隔係設定在於側面4 1 2彼此之間 的空間內產生電漿而各側面4 1 2不會受到濺鍍的範圍內。 此外，各靶材4 1 0a至4 1 Of的外形尺寸係設定成在並列設 置各靶材4 1 0a至4 1 Of時比處理基板S的外形尺寸大。 各靶材410a至41 Of的背面係依序安裝有形成爲與各 靶材410a至410f相同外形的電極420與絕緣板43 0，且 安裝在陰極組裝體40的預定位置。電極420係分別連接 於配置在濺鍍室1 1 0外部的3個交流電源E 1，而可施加 •交流電壓。 此時，對於相鄰的2個靶材（例如4 1 0a與4 1 0b )分 配1個交流電源E 1，對其中一個靶材4 1 0a施加負電位時 ，即對另一個靶材4 1 0b施加接地電位或正電位，同時， 當由各交流電源E 1施加電位時，使相鄰的各靶材4 1 0a至 4 1 Of的電位互相不一致。 藉此方式，例如透過各交流電源E 1對靶材4 1 0a、 4 1 0c、4 1 0e施加負電位時，透過交流電源E 1施加有接地 電位或正電位之兩側的各靶材4 1 0b、4 1 0d、4 1 0 f即發揮 -15- 200538569 (12) 陽極的功能（在位在兩端之靶材4 1 0a、4 1 Of的外側 接地電位的防著板1 1 1，該防著板Π 1在靶材4 1 0a、 受到濺鍍時，即發揮陽極的功能）。接著，該施加有 位的各靶材 410a、410c、41 0e受到濺鍍’且對應交 源的頻率，使各靶材4 1 0 a至4 1 0 f的電位交互切換， 使各靶材410a至41 Of受到濺鍍。 但是，當如上所述並列設置靶材4 1 0a至4 1 Of時 ^ 鍍粒子雖然未由側面4 1 2彼此之間的空間4 1 3釋出， 由於在該空間4 1 3並不需要設置任何陽極或屏蔽等構 所以可儘可能減小該不釋出濺鍍粒子的區域。其結果 處理基板S面內的膜厚分布大致均勻。 在陰極組裝體40係設置6個分別位在各靶材4 1 I 4 1 Of後方的磁鐵組裝體440a至440f。各磁鐵組裝體 至440f係形成相同構造，且具有與靶材410a至410f 而設之磁性材料製的支持部4 4 1，在支持部4 4 1上， ® 互改變與靶材4 1 0 a至4 1 0 f相對向之面的極性，而設 央磁鐵442與設在該中央磁鐵442兩側的2個周邊 443 、 444 ° 此時，中央磁鐵442係沿著靶材410a至41 Of之 方向之細長且呈環狀的磁鐵，兩端的周邊磁鐵4 4 3、 係棒狀磁鐵，且設計成：中央磁鐵4 4 2之換算成同磁 體積等於各周邊磁鐵443、444之換算成同磁化的體 (周邊磁鐵：中央磁鐵··周邊磁鐵：=；! : 2 : 1 )。 藉此方式，在各耙材4 1 0 a至4 1 〇 f的前方分別形 設置 41 Of 負電 流電 藉此 ，濺 但是 件， 可使 3 a至 440a 平行 係交 置中 磁鐵 長邊 444 化的 積和 成相 -16- 200538569 (13) 稱的閉迴路（c 1 o s e L ο ο p )的隧道狀磁通，藉由捕捉在靶 材4丨〇 a至4 1 0 f前方經電離的電子及因濺鍍所產生的二次 電子，來提高在靶材410a至410f前方的電子密度，而可 提高電漿密度。200538569 (1) IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a sputtering method and a sputtering device, and more particularly, to a method of magnetron sputtering (M agne 11 · ο nspu 11 ering) A sputtering method and a sputtering device for forming a thin film on a processing substrate are planned. [Prior art] In the magnetron sputtering method, a magnet assembly composed of a plurality of magnets that alternately changes polarity is arranged behind a target, and a tunnel is formed in front of the target by the magnet assembly. Magnetic flux in order to increase the electron density in front of the target by capturing the ionized electrons in front of the target and the secondary electrons generated by sputtering, and increase the electrons and the passive gas introduced into the vacuum chamber. The collision probability of gas molecules can increase the plasma density. Therefore, there is an advantage that the film-forming speed can be increased, and it is often used for forming a predetermined thin film on a processing substrate. On the other hand, in the magnetron sputtering method, when the position of the magnet assembly is fixed, the plasma density becomes locally high, and the erosion area of the target due to sputtering is concentrated only on The part with higher plasma density cannot invade the target uniformly, resulting in non-eroded areas. At this time, the utilization efficiency of the target is low, and particles may be caused in the non-eroded area. As a method to solve the above-mentioned problems, for example, a method has been proposed in which a magnet assembly provided behind a target formed in a rectangular shape is caused to reciprocate in parallel with the target at a constant speed during film formation, while By controlling the voltage applied to the target by setting the film formation speed of the processing substrate at -5- 200538569 (2) to be constant, the target is uniformly eroded to improve its utilization efficiency (for example, Patent Document 1). [Patent Document 1] Japanese Patent Laid-Open No. 7-1 8 4 3 5 (for example, a description of the scope of patent application) [Summary of the Invention] • (Problems to be Solved by the Invention) However, during the film formation, when the magnet is continuously made When the assembly moves, the plasma in front of the target will be shaken with it, which is accompanied by the problem that abnormal discharge is likely to occur. When an abnormal discharge occurs, the film thickness of the thin film attached to the substrate cannot be uniformly formed. In addition, the film quality cannot be uniform during sputtering by using an active gas to react the target material with the gas to form a compound thin film. Therefore, the problem of the present invention is to provide a sputtering method and an apparatus capable of suppressing the occurrence of abnormal discharge even if the target is uniformly eroded to improve the utilization efficiency in view of the problems described above. (Means to solve the problem) In order to solve the above-mentioned problem, the magnetron sputtering method of the present invention sequentially transfers a processing substrate to a position opposite to a target disposed in a vacuum chamber, and is formed in front of the target. The magnetic flux simultaneously forms an electric field between the target and the processing substrate, so that a plasma is generated and the target is sputtered, thereby forming a film on the processing substrate, which is characterized in that when the When film formation is completed and the next processing substrate is transported to a position facing the target -6-200538569 (3), the aforementioned magnetic flux is moved in parallel with the target and held, and the film is formed in this state . According to the present invention, when the next processing substrate is transported to a position opposite to the target after film formation on the processing substrate is completed, the magnetic flux is moved in parallel with the target and held. Then, a voltage is applied to the target, and a plasma is generated in front of the target to sputter the target, thereby forming a film on the processing substrate. At this time, since the position of the magnetic flux is fixed only during film formation, the plasma in front of the target is not shaken, and abnormal discharge can be suppressed. Therefore, the film thickness of the thin film attached to the processing substrate can be made uniform, and at the same time, the film quality can be made uniform. In addition, after the formation of the thin film on the processing substrate is completed, the next processing substrate is transported to a position opposite to the target, because the position of the magnetic flux is changed, the erosion area caused by sputtering to the target will be Changes occur and the target can be evenly eroded to improve utilization efficiency. Among them, it is preferable to intermittently perform the aforementioned parallel movement of the magnetic flux at least between the positions of two locations, so that it is possible to obtain an erosion area uniformly across the entire target. In addition, it is preferable to perform the parallel movement of the magnetic flux every time the processing substrate is transported to a position facing the target. The magnetron sputtering device of the present invention is provided with a target in a vacuum chamber, and a magnet assembly composed of a plurality of magnets is arranged behind the target so that a magnetic flux is formed in front of the target, and a substrate is processed at the same time. The sputtering device for the substrate transfer means which is sequentially transferred to a position opposite to the target is characterized in that it is provided with a driving means for film formation on the processing substrate, and -7-200538569 (4) When one processing substrate is transported to a position facing the target, the magnet assembly is driven so that the magnetic flux moves in parallel with the target and is held. In this case, the target may be plural, and at least one magnet assembly may be arranged behind each target. In addition, if the driving means is a cylinder or an electric motor that does not need to be controlled, it can be completed at a low cost. In addition, another sputtering device of the present invention includes a plurality of targets arranged side by side in a vacuum chamber at a predetermined interval, and is disposed behind each target so that magnetic flux is formed in front of each target, respectively, A magnet assembly composed of a plurality of magnets; and an alternating current power source for applying negative, ground, or positive potentials to each target alternately, and provided with driving means for integrally driving each magnet assembly so that the aforementioned magnetic The pass is moved parallel to the target and held. In this way, when a negative potential is applied to any of the targets arranged in parallel through the AC power source, the target to which the ground potential or the positive potential is applied has the function of an anode. Therefore, the target to which the negative potential is applied is subjected to Sputtering and alternately switching the potential of the target material in accordance with the frequency of the AC power source, thereby subjecting each target material to sputtering. At this time, while intermittently moving the magnetic flux in parallel with the target and holding it, changing the position of the magnetic flux, thereby changing the erosion area caused by sputtering to the target, and uniformly eroding the target 'To improve utilization efficiency. In this way, there is no need to provide any anodes or shields, so it can minimize the space where sputtered particles are not released, and -8-200538569 (5) and when the film is processed on the substrate , Can make the processing substrate uniform, and at the same time, make the film quality uniform. At this time, a substrate transfer means is provided for sequentially transferring the processing substrate to the corresponding position, and when the next processing substrate is transferred to the target base while being processed, the driving means is used to integrally drive each magnet assembly to form a film. The position of the magnetic flux is fixed. Therefore, the target ^ is shaken, which can suppress the occurrence of abnormal discharge. This is a small space that does not release sputtered particles. Therefore, even when the substrate is processed, the film thickness on the substrate surface can be processed. So that the film quality can be uniform. However, as described above, when the targets are arranged side by side, the interval between them may become smaller, and sometimes magnetic interference may occur when the magnets are close to each other. The magnetic flux density of the bit becomes higher, and the magnetic field is unbalanced. When a plurality of magnet assemblies are described, it is preferable to provide a magnetic flux so that the magnetic flux density formed by each magnet is uniform along the parallel arrangement. At this time, the aforementioned magnetic flux density correction means is auxiliary magnets on both sides of the magnet assembly. If the front iron assembly is moved in parallel as a whole, it is set to be approximately uniform along the parallel arrangement direction with a simple structure-( Advantageous effect of the invention) The film thickness distribution in the plane is large, and the film formation of each target is completed on the board. If the position is to be borrowed, the plasma can only be in front of the material. The film formation is distributed almost uniformly over a large area, and at the same time, the magnet assembly has the same polarity in the same direction, only in this part. When the front density correction means is set side by side, the direction is set to be large. Setting the driving means and magnetic production can make the magnetic flux density -9-200538569 (6) As explained in 6 above, the ore sputtering method and the sputtering device of the present invention are such that even if the target material is uniformly eroded to The utilization efficiency is improved, and the effect of abnormal discharge can be suppressed. [Embodiment] Referring to FIG. 1, 1 is a county plating device of a magnetron method according to the first embodiment (hereinafter referred to as a “plating device”). The professional plating equipment 1 is an in-line sputtering equipment, which has a vacuum exhaust means (not shown) such as a rotary pump and a turbo molecular pump. The sputtering chamber 11 is maintained at a predetermined vacuum degree. A substrate transfer means 2 is provided on the upper part of the sputtering chamber 11. This substrate conveying means 2 has a known structure, for example, it has a carrier 2 1 on which a processing substrate S is mounted, and intermittently drives a driving means (not shown), and sequentially transfers the processing substrate s to a later-described one. The target is facing. A gas introduction means 3 is provided in the sputtering chamber II. The gas introduction section 3 is connected to a gas source 3 3 through a gas pipe 3 2 with a mass flow controller 3 1 interposed therebetween. For sputtering gas such as argon or for reactive sputtering A reaction gas such as oxygen can be introduced into the sputtering chamber 1 1 at a constant flow rate. A cathode assembly 4 is disposed below the sputtering chamber 11. The cathode assembly 4 is, for example, a target 41 having a substantially rectangular prism. The target 41 is made by a known method in accordance with a thin film composition to be formed on the processing substrate S, such as A1 alloy or Mo. The target 4 1 is joined to a backing plate 4 2 for cooling the target 41 during sputtering, and the bottom 4 2 is mounted to the -10 of the cathode assembly 4 through an insulating plate 4 3. -200538569 (7) Frame 44. A magnet assembly 45 is provided on the cathode assembly 4 behind the target 41. The magnet assembly 45 has a support portion 45a arranged in parallel with the target 41, and the support portion 45a is provided with three magnets 4 5b and 4 5c which alternately change polarity and are arranged at predetermined intervals. In this way, a closed loop tunnel magnetic flux M is formed in front of the target 41, and by capturing the ionized electrons in front of the target 41 and the secondary electrons generated by sputtering, the The electron density in front of the target 41 can increase the plasma density. Generally, the external dimension of the target 41 is set larger than the external dimension of the processing substrate S. Therefore, when the processing substrate S becomes larger, the external dimension of the target 41 also becomes larger. At this time, a plurality of magnet assemblies 45 are arranged in parallel behind the target 41 at predetermined intervals. When the outer dimension of the processing substrate S is large, a plurality of cathode assemblies 4 are arranged in the sputtering chamber 11. The carrier 21 is driven intermittently by driving means, and the processing substrate S is sequentially transferred to a position facing the target 41, and a predetermined sputtering gas is introduced through the gas introduction means 3. When a negative DC voltage or a high-frequency voltage is applied to the target 41 through the sputtering power source E, an electric field perpendicular to the processing substrate S and the target 41 is formed, and a plasma is generated in front of the target 41 to make the target 41 Under sputtering, a film is formed on the processing substrate SI. Here, as shown in FIG. 1, FIG. 2 (a), and FIG. 2 (b), the magnet assembly 45 formed of the three magnets 45 b and 45 c alternately changes the polarity and is spaced at a predetermined interval. When the position is fixed, a tunnel-shaped magnetic flux M is formed between the magnets 45b and 45c. Therefore, -11-200538569 (8) the plasma density above the magnet 45b becomes low. At this time, the erosion area of the target 41 due to sputtering is concentrated in the part where the plasma density becomes high due to the formation of a tunnel-shaped magnetic flux M, and the magnet 4 located at the center of the plasma density becomes low. The part above 5 b remains as non-eroded area U. At this time, the utilization efficiency of the target 41 becomes low, and the non-eroded region u may cause particles. Therefore, when the magnet assembly 45 is moved in parallel between points A and B and the position of the tunnel-shaped magnetic flux M ^ is changed, the uranium target 41 can be uniformly invaded to improve its utilization efficiency, but it must be suppressed at this time. Generation of abnormal discharge. Therefore, in this embodiment, a cylinder 46 as a driving means is provided in the magnet assembly 45, and the magnet is assembled between two positions (points A and B) along the horizontal direction of the target 41. The bodies 45 are moved in parallel and can be held at various positions. Next, when the film formation on the processing substrate S mounted on the carrier 21 is completed, the negative DC voltage or the high-frequency voltage is stopped to be applied to the target 41, and after the discharge is stopped at the moment, the next carrier 2 1 is stopped. When the upper processing substrate S is transported to a position opposite to ¥ E material 41, the cylinder 46 is driven to make the magnet assembly 45, and even if the tunnel-shaped magnetic flux M moves from point A to point B in parallel, and Keep it. At this time, the magnet assembly 45 may be moved in parallel from point A to point B before forming a processing substrate S mounted on at least the next carrier 2 1. When the processing substrate S mounted on the next carrier 21 is transported to a position opposite to the target 41, a negative DC voltage or a high-frequency voltage is applied to the target 41 again, and it is in front of the target 41. Plasma is generated and the target 41 is subjected to -12-200538569 (9) to sputtering to form a film. Then, when the processing substrate S mounted on the lower side is transported to the displacement cylinder 46 facing the target 41, the magnet assembly 45 is leveled again from the point B and held, and the above steps are performed. Film formation. This operation is performed on the processing substrate S which is sequentially transferred. At this time, the magnet assembly 45 is moved by the cylinder 46, and it is preferable that the substrate transfer means 2 is mounted on the processing substrate S to the target every time The material 41 is carried out at a facing position. In this way, the tunnel-shaped magnetic flux M is fixed only during the film formation, thereby preventing the plasma in front of the target 41 from shaking and generating an abnormal discharge. Therefore, the thickness of the substrate to be processed can be made uniform and the film quality can be made uniform. In addition, after the film formation on the substrate S is completed, when the next processing target position of the substrate 41 is opposed, the tunnel-shaped magnetic flux will be changed, so that the erosion area caused by sputtering to the target 41 can be uniformly eroded. Target 41 to improve utilization efficiency. In addition, since the cylinder 46 is used, the magnet assembly 4 5 is driven by a motor while controlling the speed, which is lower. Furthermore, the magnet assembly 45 is moved as long as the air pressure of the air cylinder 46 is appropriately set. In the first embodiment, a case where one magnet assembly 45 is placed on the target will be described. However, when a plurality of magnet assemblies 45 are provided in parallel, each magnet assembly 4 can be driven. 5. This can reduce costs. -Carrier 2 1: When set, the drive moves to A to form a film by iteration. The position of the parallel pedestal 21 is carried out, and the thin film of S can be suppressed. When S is transported to the position with M in the process, changes, or positions, etc., the cost can be set at the rear of the instant 4 1 13-200538569 (10) In this embodiment, although the case of using the cylinder 46 is described, if the magnet assembly 45 can be quickly changed in position at least 2 points, That is, it is not limited to this, and a motor that does not need to be controlled for, for example, position or speed can be used. In addition, in this embodiment, the in-line (i η -1 ine) sputtering. Plating apparatus 1 is described, but it is not limited to this, as long as it is, for example, a transfer room and a connection with the transfer room It can also be applied to a sputtering chamber composed of a sputtering chamber and a sputtering device that transfers a processing substrate by a transfer robot provided in a transfer chamber in order to transfer the processing substrate S to a position facing the target 41 in order. The sputtering method of the present invention. Referring to FIG. 3, 10 is a sputtering apparatus of the second embodiment. The sputtering device 10 is an in-line (i η -1 ine) sputtering device using a plurality of target materials described later, and has a vacuum pump such as a rotary pump, a turbo molecular pump, and the like. Gas (not shown), while the sputtering chamber 1 1 0 is maintained at a predetermined vacuum degree. A processing substrate S ′ is disposed on the upper part of the sputtering chamber 110, and the processing substrate S can be sequentially transferred to each of the substrates described below by the same substrate transfer means (not shown) as the first embodiment. Target position. A gas introduction means 30 is provided in the sputtering chamber 110. The gas introduction means 30 is connected to a gas source 30c through a gas pipe 30b provided with a mass flow controller 30a. A sputtering gas such as argon or a reactive gas such as oxygen used for reactive sputtering is used. A certain flow rate can be introduced into the sputtering chamber Π 〇. A cathode assembly 40 is disposed below the sputtering chamber 110. The cathode assembly 40 has six target materials 4 1 0 a to 4 1 0 f formed in the same shape as a substantially rectangular column, etc. -14- 200538569 (11). Each target 4 1 0 a to 4 1 0 f is made by a known method according to the composition of a thin film to be formed on the processing substrate S such as A1 alloy, Mo, or ITO, and is bonded to a cooling base plate ( backing plate) (not shown). Among the targets 410a to 410f, the sputtering surfaces 4 1 1 when they are not in use are arranged side by side on the same plane parallel to the processing substrate S, and the opposite sides 4 1 2 of the targets 410a to 41 Of No anodes or shields are provided between each other. At this time, the distance between the target ® materials 4 1 0a to 4 1 Of is set in a range where plasma is generated in the space between the side surfaces 4 1 2 and each side surface 4 1 2 is not subject to sputtering. The external dimensions of the targets 4 1 0a to 4 1 Of are set to be larger than the external dimensions of the processing substrate S when the targets 4 1 0a to 4 1 Of are placed in parallel. An electrode 420 and an insulating plate 430 formed in the same shape as the targets 410a to 410f are sequentially mounted on the back surfaces of the respective targets 410a to 41Of, and are mounted at predetermined positions of the cathode assembly 40. The electrodes 420 are connected to three AC power sources E 1 arranged outside the sputtering chamber 110, respectively, and an AC voltage can be applied. At this time, an AC power source E 1 is allocated to two adjacent targets (for example, 4 1 0a and 4 1 0b), and when a negative potential is applied to one target 4 1 0a, the other target 4 1 0b applies a ground potential or a positive potential, and at the same time, when the potential is applied by each AC power source E1, the potentials of the adjacent targets 4 1 0a to 4 1 Of do not coincide with each other. In this way, for example, when a negative potential is applied to the targets 4 1 0a, 4 1 0c, 4 1 0e through each AC power source E 1, each target 4 on both sides of the ground or positive potential is applied through the AC power source E 1. 1 0b, 4 1 0d, 4 1 0 f will play -15- 200538569 (12) The function of the anode (targets 4 1 0a, 4 1 Of on both ends of the ground potential prevention plate 1 1 1 When the target plate 1 1 is sputtered to the target 4 1 0a, it functions as an anode). Next, the targets 410a, 410c, and 41 0e to which the position is applied are sputtered, and corresponding to the frequency of the crossover, the potentials of the targets 4 1 0 a to 4 1 0 f are alternately switched, so that each target 410 a To 41 Of was sputtered. However, when the targets 4 1 0a to 4 1 Of are arranged side by side as described above, although the plated particles are not released from the space 4 1 3 between the sides 4 1 2, since it is not necessary to provide the space in the space 4 1 3 Any anode or shield structure can minimize the area where sputtered particles are not released. As a result, the film thickness distribution in the S-plane of the processing substrate is substantially uniform. The cathode assembly 40 is provided with six magnet assemblies 440a to 440f respectively located behind the respective targets 4 1 I 4 1 Of. Each magnet assembly to 440f has the same structure and has a support portion 4 4 1 made of a magnetic material provided with the targets 410a to 410f. On the support portion 4 4 1, ® changes to the target 4 1 0 a To 4 1 0 f on the opposite side, and the central magnet 442 and the two peripheries 443 and 444 on both sides of the central magnet 442 are set. At this time, the central magnet 442 follows the target 410a to 41 Of. The slender and ring-shaped magnet in the direction, the peripheral magnets 4 4 3 at both ends are rod-shaped magnets, and are designed such that the conversion of the central magnet 4 4 2 into the same magnetic volume is equal to the conversion of the peripheral magnets 443 and 444 into the same magnetization. Body (peripheral magnet: central magnet · · peripheral magnet: = ;!: 2: 1). In this way, 41 Of negative currents are respectively formed in front of each of the rake materials 4 1 0 a to 4 1 〇f. By this, splashing the pieces can make the long sides of the magnets 3444 to 440a in parallel. The product and phase of -16- 200538569 (13) called a closed loop (c 1 ose L ο ο p) tunnel-like magnetic flux, which is captured by the ionized in front of the target 4 丨 〇a to 4 1 0 f The electrons and secondary electrons generated by sputtering can increase the electron density in front of the targets 410a to 410f, and can increase the plasma density.
接著，將處理基板S搬送至與並列設置之靶材4 1 0a 至410f相對向的位置，再介由氣體導入手段30來導入預 定的濺鍍氣體，當對各靶材4 1 0a至4 1 Of的電極透過3個 交流電源E 1分別施加電位時，形成垂直於處理基板S及 靶材410a至410f的電場，而在靶材410a至410f前方產 生電漿而使各靶材4 1 0a至4 1 Of交互受到濺鍍，藉此成膜 在處理基板S上。 但是，將各磁鐵組裝體 440a至440f的位置予以固定 時，由於在中央磁鐵442與兩周邊磁鐵443、444彼此之 間形成隧道狀磁通，所以中央磁鐵442上方的電漿密度會 變低。此時，因濺鍍所引起的各靶材410a至41 Of的侵蝕 區域由於形成隧道狀磁通，以致僅集中在電漿密度變高的 部分，而使位在電漿密度變低之中央磁鐵442上方的部分 殘留下來作爲非侵蝕區域。其結果使各靶材410a至410f 的利用效率變低，而且非侵蝕區域會形成引起微粒（ particle)的原因。 在第2實施形態中，使支持部44 1的寬度尺寸小於沿 著各靶材410a至41 Of並列設置方向的寬度尺寸，同時， 在陰極組裝體4 0設置氣缸4 5 0，在其驅動軸4 5 1安裝各磁 鐵組裝體 4 4 0 a至4 4 0 f，在沿著各靶材4 1 0 a至4 1 0 f並列 -17- 200538569 (14) 設置方向的水平2個部位的位置（A 1點、B 1點），使磁 鐵組裝體 4 4 0 a至4 4 0 f —體平行移動，而改變隧道狀磁通 的位置。 此時，爲了抑制異常放電的產生，因此最好在A 1點 或B1點保持磁鐵組裝體 440a至4 40f，且當在例如處理 基板S上的成膜完成，即停止對靶材4 1 0 a至4 1 0 f施加交 流電壓，在暫時停止放電之後，將下一個處理基板S搬送、 ® 至與靶材4 1 0 a至4 1 0 f相對向的位置時，即驅動氣缸4 5 0 而使磁鐵組裝體440 a至44 Of，亦即使隧道狀磁通從A1點 平行移動到B 1點。藉此方式，可擴大侵蝕區域，而提高 各靶材4 1 0 a至4 1 0 f的利用效率。 但是，當如上所述使各靶材4 1 0 a至4 1 0 f相互接近而 設時，將使磁鐵組裝體440a至440f亦相互接近而設。此 時，如第4圖（a)所示，當對各磁鐵組裝體440a至44 Of之 從各磁鐵442、443、444上面隔著預定間隔的位置沿著磁 ® 鐵組裝體440a至440f的並列設置方面的垂直方向磁場強 度Bs及水平方向磁場強度Bp進行測定時，由於在同方向 同一極性的周邊磁鐵443、444 (例如磁鐵組裝體440b的 周邊磁鐵443與磁鐵組裝體440c的周邊磁鐵443 )相互接 近，致使產生磁場干擾，在該部位的磁通密度會高於在位 於兩端部之磁鐵組裝體 440a、440f的周邊磁鐵443、444 上方的磁通密度，而使磁場失衡。在該狀態下成膜時，處 理基板S面內的膜厚分布無法大致均勻。 在第2實施形態中，如第3圖所示，在並列設置之磁 -18- 200538569 (15) 裝體 ;444 輔助 裝在 440f 同， Ϊ D1 此方 兩端 基板 爲石灶 設置 例如 周邊 大的 使用 基板 對向 的外 鐵組裝體 440a至440f的兩側，以使鄰接的磁鐵組 440a之周邊磁鐵44 3與磁鐵組裝體 440f之周邊磁鐵 的磁性分別一致的方式設置作爲磁通密度修正手段之 磁鐵460，將用以支持輔助磁鐵460的支持部461安 氣缸4 5 0的驅動軸451，而可與磁鐵組裝體 440a至 一體移動。 此時，輔助磁鐵460係與周邊磁鐵443、444相 ® 且將該輔助磁鐵460與周邊磁鐵443、444之間的間R 設爲與相互接近的周邊磁鐵之間的間隔D2相同。藉 式，如第4圖（b)所示，在磁鐵組裝體 440a至440f 的磁通密度亦變高而使磁場平衡獲得改善，而使處理 S面內的膜厚分布得以大致均勻。 外，在第2實施形態中，雖使用輔助磁鐵460作 通密度修正手段的情形加以說明，但是只要是當並列 磁鐵組裝體時可達成磁場平衡者，則並非侷限於此。 ，亦可僅增加位在並列設置之磁鐵組裝體之兩外側的 磁鐵的寬度尺寸，而變更爲使磁鐵產生的磁通密度變 材料，來作爲磁通密度修正手段。 (實施例1 ) 在本實施例中，使用第1圖所示之濺鍍裝置1， 玻璃基板（1 0 0 0 m m X 1 2 0 0 m m )作爲處理基板s，藉由 搬送手段2 1 ’將該玻璃基板依序搬送至與紀材4 1相 的位置。使用A1作爲靶材41，且以公知的方法將Al | -19- 200538569 (16) 形尺寸製作成1 2 0 0 m m x 2 0 0 0 m m，而與底板4 2接合。 ，靶材4 1與玻璃基板之間的距離設定在1 60mm。此 由於靶材4 1的外形尺寸較大，所以在靶材4 1後方設 個第1圖所示之磁鐵組裝體 45，將這些磁鐵組裝體 以預定間隔平行並列設置，而構成陰極組裝體4。 以濺鍍條件而言，以將進行真空排氣的濺鍍室1 的壓力保持在0.3 Pa的方式，控制質流控制器31而 ® 爲濺鍍氣體的氬導入濺鍍室1 1內。此外，對於靶材‘ 投入電力設定在1 3 0 K W，濺鍍時間設定在6 0秒。 然後，在上述濺鍍條件下，依序搬送3塊玻璃 SI、S2、S3，而在各玻璃基板SI、S2、S3成膜A1。 ，當在最初的玻璃基板上成膜完成，在暫時停止對靶7 投入電力之後，將下一個載座2 1上的玻璃基板S2搬 與靶材4 1相對向的位置時，驅動氣缸4 6，而使4個 組裝體 4 5同時平行移動並予以保持，而進行一連串 ®膜處理。 (比較例1 ) 比較例1的濺鍍條件與上述實施例1相同，且依 3塊玻璃基板S 4、S 5、S 6搬送至與靶材4 1相對向的 ，而進行A1的成膜處理。此時，磁鐵組裝體 4 5的 手段變更爲可控制位置或速度的電動機，在成膜期間 沿著靶材4 1之水平方向的2個部位的位置之間，使 磁鐵組裝體 45等速且平行地連續進行往返運動。 此外 時， :置4 45 1內 將作 "的 基板 此時 时41 送至 磁鐵 的成 序將 位置 驅動 ，在 4個 -20- 200538569 (17) 表1係表示當連續在3塊玻璃基板上成膜MO膜時， 沿著處理基板S之χγ方向的預定位置之A1膜之膜厚分 布。由該表〗可知，在比較例1中，3塊玻璃基板S 4 ' S 5 、S6的膜厚分布無法均勻。相對於此，可知在實施例1 中，3塊玻璃基板S 1、S 2、S 3均可獲得:18前後之穩定的 A 1膜的膜厚分布，而得以均勻完成。 此外，表2係表示當連續在3塊玻璃基板上成膜A1 膜時，計算異常放電（電弧放電）的次數者。藉由該表2 ，在比較例1中，對於各玻璃基板S4、S5、S6進行濺鍍 中之異常放電次數分別超過3 0次。相對於此，可知在實 施例1中，異常放電次數與比較例1相較之下，可大約抑 制一半。Next, the processing substrate S is transported to a position facing the targets 4 1 0a to 410f arranged in parallel, and a predetermined sputtering gas is introduced through the gas introduction means 30. When the targets 4 1 0a to 4 1 are introduced, When the electrodes of Of pass through the three AC power sources E1 and apply potentials, an electric field perpendicular to the processing substrate S and the targets 410a to 410f is formed, and a plasma is generated in front of the targets 410a to 410f to make each target 4 1 0a to 4 1 Of is sputtered alternately, thereby forming a film on the processing substrate S. However, when the positions of the respective magnet assemblies 440a to 440f are fixed, since a tunnel-shaped magnetic flux is formed between the central magnet 442 and the two peripheral magnets 443 and 444, the plasma density above the central magnet 442 becomes low. At this time, the eroded areas of the targets 410a to 41 Of caused by sputtering form a tunnel-like magnetic flux, so that only the portion where the plasma density becomes high is concentrated, and the central magnet is located where the plasma density becomes low. The portion above 442 remains as a non-eroded area. As a result, the utilization efficiency of each of the targets 410a to 410f becomes low, and a cause of particles is formed in the non-eroded area. In the second embodiment, the width dimension of the support portion 44 1 is made smaller than the width dimension along the parallel arrangement directions of the respective targets 410 a to 41 Of. At the same time, a cylinder 4 5 0 is provided in the cathode assembly 40 and a drive shaft is provided. 4 5 1 Attach each magnet assembly 4 4 0 a to 4 4 0 f, and juxtapose each target 4 1 0 a to 4 1 0 f -17- 200538569 (14) Placement direction at two horizontal positions (A 1 point, B 1 point), the magnet assembly body 4 4 0 a to 4 4 0 f is moved in parallel to change the position of the tunnel-shaped magnetic flux. At this time, in order to suppress the occurrence of abnormal discharge, it is best to hold the magnet assemblies 440a to 4f at points A 1 or B1, and stop the target 4 1 0 when the film formation on the processing substrate S is completed, for example. a to 4 1 0 f. When AC voltage is applied and the discharge is temporarily stopped, the next processing substrate S is transferred to the position opposite to the target 4 1 0 a to 4 1 0 f, that is, the cylinder 4 5 0 is driven. Even if the magnet assemblies 440 a to 44 Of are moved, the tunnel-shaped magnetic flux moves from point A1 to point B1 in parallel. In this way, the erosion area can be enlarged, and the utilization efficiency of each target 4 1 0 a to 4 1 0 f can be improved. However, when the targets 4 1 a to 4 1 f are placed close to each other as described above, the magnet assemblies 440 a to 440 f are also placed close to each other. At this time, as shown in FIG. 4 (a), when the magnets 440a to 440f of the magnet assembly 440a to 44 Of are positioned along the magnet® iron assembly 440a to 440f at a predetermined interval from the top of the magnets 442, 443, and 444, When the vertical magnetic field strength Bs and horizontal magnetic field strength Bp are measured in parallel, the peripheral magnets 443 and 444 having the same polarity in the same direction (for example, the peripheral magnet 443 of the magnet assembly 440b and the peripheral magnet 443 of the magnet assembly 440c ) Close to each other, resulting in magnetic field interference. The magnetic flux density at this part will be higher than the magnetic flux density above the peripheral magnets 443 and 444 of the magnet assembly 440a and 440f at the two ends, resulting in an unbalanced magnetic field. When a film is formed in this state, the film thickness distribution in the S-plane of the processing substrate cannot be substantially uniform. In the second embodiment, as shown in FIG. 3, the magnets 18- 200538569 (15) are installed side by side; 444 are installed at 440f; Ϊ D1 The two substrates on the two sides are set for a stone stove, for example, the surrounding area is large. On both sides of the outer iron assembly 440a to 440f using the substrates facing each other, the peripheral magnets 44 3 of the adjacent magnet group 440a and the peripheral magnets of the magnet assembly 440f are set to have the same magnetic properties as the magnetic flux density correction means. The magnet 460 is configured to support the auxiliary portion 461 of the auxiliary magnet 460 by mounting the drive shaft 451 of the cylinder 4 50 with the magnet assembly 440a. At this time, the auxiliary magnet 460 is in phase with the peripheral magnets 443 and 444, and the interval R between the auxiliary magnet 460 and the peripheral magnets 443 and 444 is set to be the same as the interval D2 between the peripheral magnets that are close to each other. By way of example, as shown in FIG. 4 (b), the magnetic flux densities in the magnet assemblies 440a to 440f are also increased to improve the magnetic field balance, and the film thickness distribution in the process S plane can be substantially uniform. In addition, in the second embodiment, the case where the auxiliary magnet 460 is used as the flux correction means is described, but it is not limited to this as long as the magnetic field balance can be achieved when the magnet assemblies are arranged in parallel. It is also possible to increase only the width of the magnets on the two outer sides of the magnet assembly arranged side by side, and change to a material that changes the magnetic flux density generated by the magnet as a means for correcting the magnetic flux density. (Example 1) In this example, the sputtering device 1 shown in FIG. 1 was used, and a glass substrate (1000 mm X 1 2 0 0 mm) was used as the processing substrate s, and the conveyance means 2 1 ′ This glass substrate was sequentially conveyed to a position with a phase 41 of Kiki. A1 was used as the target 41, and the shape of Al | -19-200538569 (16) was made into a 12 00 m x 2 0 0 0 m m by a known method, and was bonded to the bottom plate 4 2. The distance between the target 41 and the glass substrate is set at 160 mm. Since the target 41 has a large external dimension, a magnet assembly 45 shown in FIG. 1 is provided behind the target 41, and these magnet assemblies are arranged in parallel at a predetermined interval to form a cathode assembly 4 . In terms of sputtering conditions, the mass flow controller 31 is controlled so that argon, which is a sputtering gas, is introduced into the sputtering chamber 1 1 so that the pressure of the sputtering chamber 1 that is evacuated is maintained at 0.3 Pa. In addition, for the target material, the input power is set to 130 KW, and the sputtering time is set to 60 seconds. Then, under the above-mentioned sputtering conditions, three glasses SI, S2, and S3 are sequentially conveyed, and A1 is formed on each of the glass substrates SI, S2, and S3. When the film formation on the first glass substrate is completed, after the power supply to the target 7 is temporarily stopped, the glass substrate S2 on the next carrier 21 is moved to a position facing the target 41, and the cylinder 4 6 is driven. A series of ® membrane treatments are performed while the 4 assemblies 4 5 are moved and held in parallel at the same time. (Comparative Example 1) The sputtering conditions of Comparative Example 1 were the same as those of Example 1, and the three glass substrates S 4, S 5, and S 6 were transported to face the target 41, and A1 was formed into a film. deal with. At this time, the means of the magnet assembly 45 is changed to a motor capable of controlling the position or speed, and the magnet assembly 45 is made to be at a constant speed and between two positions along the horizontal direction of the target 41 during film formation. Continuous back and forth movements are performed in parallel. In addition, the substrate will be placed in 4 45 1 at this time and 41 will be sent to the magnet in order to drive the position, in the order of 4-20- 200538569 (17) Table 1 shows that when three glass substrates are continuous When the MO film is formed on the upper surface, the film thickness distribution of the A1 film at a predetermined position along the χγ direction of the processing substrate S is distributed. As can be seen from the table, in Comparative Example 1, the film thickness distribution of the three glass substrates S 4 ′ S 5 and S6 was not uniform. In contrast, it can be seen that in Example 1, three glass substrates S1, S2, and S3 can all obtain a stable film thickness distribution of the A1 film before and after 18, and can be completed uniformly. In addition, Table 2 shows those who counted the number of abnormal discharges (arc discharges) when the A1 film was formed on three glass substrates continuously. Based on this Table 2, in Comparative Example 1, the number of abnormal discharges in the sputtering performed on each of the glass substrates S4, S5, and S6 exceeded 30 times. On the other hand, it can be seen that the number of abnormal discharges in Example 1 can be suppressed by about half compared with that in Comparative Example 1.
(表1 ) 實施例1 比較例2 第1塊處理基板（SI、S4) ±8.5 ±12.2 第2塊處理基板（S2、S5 ) ±7.9 ±6.7 第3塊處理基板（S3、S6 ) ±7.9 ±8.5 (表2 ) 實施例1 比較例2 第1塊處理基板（SI、S4) 13 83 第2塊處理基板（S 2、S 5 ) 17 30 第3塊處理基板（S3、S6 ) 15 30 -21 - (18) (18)200538569 (實施例2) 本實施例中，係於上述實施例1之條件中，計算使對 於靶材41的投入電力在0至200KW的範圍內變化時之電 弧放電（異常放電）次數，且將其結果顯示在第3圖。同 時，比較例2係於上述比較例1之條件中，計算使對於靶 材41的投入電力在0至200KW的範圍內變化時之電弧放 電（異常放電）次數，且顯示在第5圖。此時線1爲實施 例2，線2爲比較例2。 藉此，於比較例2的情形下，隨著對於靶材41的投 入電力增加，電弧放電的次數亦隨之呈比例增加，當投入 電力超過100KW時，電弧放電次數已超過20次。相對於 此，在實施例2中，即便對於靶材41的投入電力增加， 電弧放電的次數並未極端地增加，一般而言，在用於A1 濺鍍的投入電力範圍（50至130KW)內，與比較例2相 較之下，電弧放電的次數可大約抑制一半。 (實施例3 ) 在本實施例中，使用第3圖所示之濺鍍裝置1 〇，使用 玻璃基板（l〇〇〇mnixl 250mm )作爲處理基板S ’藉由基板 搬送手段，將該玻璃基板依序搬送至與並列設置之靶材 4 10a至41 Of相對向的位置。此時，靶材410a至41 Of係 使用在In2〇3中添加1〇重量°/。的Sn02者，且以公知的方 法5將各粑材製作成外形尺寸爲 2 0 0 m m X〗7 0 0 m m，厚度隱(Table 1) Example 1 Comparative Example 2 First processing substrate (SI, S4) ± 8.5 ± 12.2 Second processing substrate (S2, S5) ± 7.9 ± 6.7 Third processing substrate (S3, S6) ± 7.9 ± 8.5 (Table 2) Example 1 Comparative Example 2 First processing substrate (SI, S4) 13 83 Second processing substrate (S 2, S 5) 17 30 Third processing substrate (S3, S6) 15 30 -21-(18) (18) 200538569 (Example 2) In this example, based on the conditions of Example 1 above, the arc when the input power to the target 41 is changed in the range of 0 to 200 KW is calculated. The number of discharges (abnormal discharges) is shown in Fig. 3. At the same time, Comparative Example 2 calculates the number of arc discharges (abnormal discharges) when the input power to the target 41 is changed in the range of 0 to 200 KW under the conditions of the above Comparative Example 1, and is shown in Fig. 5. At this time, line 1 is Example 2 and line 2 is Comparative Example 2. With this, in the case of Comparative Example 2, as the input power to the target 41 increases, the number of arc discharges also increases proportionally. When the input power exceeds 100 KW, the number of arc discharges has exceeded 20 times. In contrast, in Example 2, even if the input power to the target 41 is increased, the number of arc discharges does not increase extremely. Generally, within the input power range (50 to 130KW) for A1 sputtering Compared with Comparative Example 2, the number of arc discharges can be suppressed by about half. (Example 3) In this example, a sputtering apparatus 10 shown in FIG. 3 was used, and a glass substrate (100 mmixl 250 mm) was used as the processing substrate S ′. The glass substrate was transferred by a substrate transfer means. They are sequentially transported to positions facing the targets 4 10a to 41 Of arranged in parallel. At this time, the targets 410a to 41 Of are used by adding 10 wt.% To In203. Sn02 person, and each well was made into a shape of 2 0 0 m m X 〖7 0 0 m m by a known method 5 with a hidden thickness.
200538569 (19) 1 0 m m，且分別接合於底板之後，以耙材4 1 0 a至 之間的間隔爲2mm的方式並列設置。靶材41 0a 玻璃基板之間的距離設定在1 6 0 m m。輔助磁鐡 邊磁鐵 44 3、444彼此之間的間隔 Dl、D2 1 7 0 m m 〇 以濺鍍條件而言，以將進行真空排氣的濺錶 的壓力保持在〇.7Pa的方式，控制氣體導入手f 流控制器3 0a而將作爲濺鍍氣體的氬、作爲反 、氧導入濺鍍室1 1 0內。此外，由交流電源E】 對於靶材41的投入電力設定在20KW，頻率設 。接著，以50Hz的頻率一面對於並列設置之靶 4 1 0 f交互施加負電位及正電位或接地電位之任-將投入電力從0KW慢慢上升到10KW，而進行 濺鍍。 第6圖係表示以上述條件將ITO膜成膜在ii 之膜厚分布圖。根據本實施例3，在測定玻璃基 點的膜厚（第6圖中的單位爲A )之下，可得 之良好膜厚分布的面內均一性。此外，在上述低 搬送處理基板S至與靶材410a至41 Of相對向 面驅動氣缸460，一面連續長時間進行濺鍍之核 靶材410a至410f表面之後，在靶材410a至4 未發現非侵蝕區域。 此外，比較例3係使用與上述實施例3相 鍍裝置1 〇，以與上述實施例3相同的條件在200538569 (19) 10 mm, which are respectively connected to the bottom plate, and are arranged side by side so that the space between the rake materials 4 1 0 a to 2 mm is 2 mm. The distance between the target 41 0a glass substrates was set at 160 mm. The distance D1 and D2 between the auxiliary magnetic edge magnets 44 3 and 444 are 1 70 mm. In terms of sputtering conditions, the gas is controlled so that the pressure of the sputtering gauge for vacuum exhaust is maintained at 0.7 Pa. The hand f flow controller 30a is introduced, and argon, which is a sputtering gas, is introduced into the sputtering chamber 110 as a reverse and oxygen. The input power from the AC power source E] to the target 41 is set to 20 KW, and the frequency is set to. Next, at a frequency of 50 Hz, a negative potential, a positive potential, or a ground potential is alternately applied to the targets 4 1 0 f arranged in parallel-the input power is gradually increased from 0 KW to 10 KW, and sputtering is performed. FIG. 6 is a film thickness distribution diagram of forming an ITO film under the above conditions at ii. According to this Example 3, the in-plane uniformity of a good film thickness distribution can be obtained under the measurement of the film thickness of the glass base point (the unit in Fig. 6 is A). In addition, after the above-mentioned low-conveyance processing substrate S is driven to the cylinder 460 facing the targets 410a to 41 Of, and the surfaces of the nuclear targets 410a to 410f that are sputtered for a long period of time, no non-targets are found in the targets 410a to 4 Eroded area. In addition, Comparative Example 3 uses a phase plating apparatus 10 similar to that in Example 3 described above, under the same conditions as in Example 3 above.
:4 1 0 f彼此 至4 1 0 f與 460 、各周 係設定在 [室1 1 〇內 S 30之質 I:氣體之氫 所產生之 定在50Hz 材410a至 -者，一面 3 0秒鐘的 $璃基板時 板面內3 5 1 0 0 0 A ± 8 % B件下，每 J位置，一 ί，經確認 .0 f表面並 1構造的濺 :璃基板S -23- 200538569 (20) 上進行成膜。但是，並未配置作爲磁通密度修正手 助磁鐵4 6 0，而且將氣缸4 5 0變更爲可控制位置或 電動機，在成膜期間，在沿著靶材4 1 0a至4 1 Of之 向之2個部位的位置之間，使磁鐵組裝體 4 4 0 a至 速且平行地連續進行往返運動（l〇mm/ sec )。 藉此方式，在比較例3中，由交流電源E1的 力從0KW慢慢上升，當到達1 0KW時，在各靶材. ^ 4 1 Of上方可發現激烈的異常放電，而不可能繼續進 【圖式簡單說明】 第1圖係本發明之濺鍍裝置的槪略說明圖。 第2圖（a)、（b)係爲磁鐵組裝體平行移動的說明 第3圖係用以說明第2實施形態之濺鍍裝置的 〇 第4圖（a)、（b)係用以說明並列設置磁鐵組裝 磁通密度分布圖。 第5圖係表示投入電力與電弧放電次數的關係 〇 第6圖係用以說明使用第2實施形態之濺鍍裝 成膜時之膜厚分布圖。 【主要元件之符號說明】 1、1 〇 :濺鍍裝置（磁控管濺鍍裝置） 段之輔 速度的 水平方 440f 等 投入電 HOa至 行成膜 圖。 構成圖 體時之 曲線圖 置進行 -24- 200538569: 4 1 0 f to 4 1 0 f and 460, each cycle is set in [chamber 1 10, quality of S 30 I: gas generated by hydrogen at 50 Hz material 410a to-, 30 seconds on one side The glass substrate of the clock is 3 5 1 0 0 0 A ± 8% within the surface of the plate. For each J position, one liter is confirmed. 0 f surface and 1 structure splash: glass substrate S -23- 200538569 ( 20) Film formation is performed. However, the hand-assisted magnet 4 60 is not provided as a magnetic flux density correction, and the cylinder 4 50 is changed to a controllable position or a motor. During the film formation, the target 4 1 0a to 4 1 Of Between the positions of the two parts, the magnet assembly was continuously reciprocated (10 mm / sec) in a fast and parallel manner at 440a. In this way, in Comparative Example 3, the force from the AC power source E1 gradually rises from 0KW, and when it reaches 10KW, intense abnormal discharge can be found above each target. ^ 4 1 Of, it is impossible to continue [Brief description of the drawings] FIG. 1 is a schematic explanatory diagram of the sputtering apparatus of the present invention. Figures 2 (a) and (b) are explanations of the parallel movement of the magnet assembly. Figure 3 is a description of the sputtering apparatus of the second embodiment. Figures 4 (a) and (b) are illustrations. A magnetic flux density distribution diagram of the magnets arranged side by side. Fig. 5 is a graph showing the relationship between the electric power input and the number of arc discharges. Fig. 6 is a graph illustrating a film thickness distribution when the film is formed by sputtering in the second embodiment. [Description of Symbols of Main Components] 1.10: Sputtering device (magnetron sputtering device) Section of auxiliary speed Horizontal 440f, etc. Turn on electricity HOa to form a film. Constituting the graph when the body is placed -24- 200538569
(21) 2 :基板搬 3、 3 0 :氣 4、 40 :陰 11、 110： 2 1 :載座 31、 30a ： 32 、 30b ： 33 、 30c ： 41、 410a j 42 :底板 43 、 430 ： 4 4 :框架 45、 440a i 45a 、 441、 45b 、 45c ： 46 、 450 ： 1 1 1 :防著 4 1 1 :濺鍍 4 1 2 :側面 4 1 3 :空間 4 2 0 :電極 442 :中央 443 、 444 : 4 5 1 :驅動 送手段 體導入手段 極組裝體 濺鍍室 質流控制器 氣體管 氣體源 g 4 1 0 f :靶材 絕緣板 g 440f :磁鐵組裝體 461 :支持部 磁鐵 氣缸（驅動手段） 板 面 磁鐵 周邊磁鐵 軸 -25- 200538569 (22) 4 6 0 :輔助磁鐵 4 6 1 :支持部 D 1、D 2 :間隔 E :濺鍍電源 E 1 :交流電源 Μ :隧道狀磁通 5 :處理基板(21) 2: Board transfer 3, 3 0: Gas 4, 40: Yin 11, 110: 2 1: Carriers 31, 30a: 32, 30b: 33, 30c: 41, 410a j 42: Base plate 43, 430: 4 4: Frame 45, 440a i 45a, 441, 45b, 45c: 46, 450: 1 1 1: Protection 4 1 1: Sputtering 4 1 2: Side 4 1 3: Space 4 2 0: Electrode 442: Center 443, 444: 4 5 1: drive delivery means, introduction means, pole assembly, sputtering chamber, mass flow controller, gas tube, gas source, g 4 1 0 f: target insulation board, g 440f: magnet assembly, 461: support magnet cylinder (Driving means) Peripheral magnet shaft of plate magnet-25- 200538569 (22) 4 6 0: Auxiliary magnet 4 6 1: Support D 1, D 2: Space E: Sputtering power E 1: AC power M: Tunnel shape Flux 5: Processing substrate
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