CN112553583B

CN112553583B - Sputtering apparatus and sputtering apparatus control method

Info

Publication number: CN112553583B
Application number: CN201910912602.7A
Authority: CN
Inventors: 朴瑨哲
Original assignee: Avaco Co Ltd
Current assignee: Avaco Co Ltd
Priority date: 2019-09-25
Filing date: 2019-09-25
Publication date: 2023-03-28
Anticipated expiration: 2039-09-25
Also published as: CN112553583A

Abstract

A sputtering apparatus and a sputtering apparatus control method are provided, the sputtering apparatus including: a support part for supporting the substrate; a target spaced apart from the support section with respect to a horizontal direction; a middle magnet for adjusting the plasma intensity of the middle area, wherein the middle area is arranged between the substrate and the target; an upper magnet for adjusting the plasma intensity of an upper region, wherein the upper region is arranged above the middle region; a lower magnet for adjusting the plasma intensity of a lower region, the lower region being disposed below the middle region; the middle acquisition module is used for measuring and acquiring a middle plasma value of the middle area; an upper acquisition module for measuring and acquiring an upper plasma value of the upper region; the lower part acquisition module is used for measuring and acquiring a lower plasma value of the lower region; an intermediate moving mechanism for moving the intermediate magnet in the horizontal direction; an upper moving mechanism for independently moving the upper magnet in the horizontal direction; and a lower moving mechanism for moving the lower magnet independently in the horizontal direction.

Description

Sputtering apparatus and sputtering apparatus control method

Technical Field

The present invention relates to a sputtering apparatus for performing a sputtering process such as a vapor deposition process on a substrate, and a sputtering apparatus control method.

Background

Generally, in order to manufacture a display device, a Solar Cell (Solar Cell), a semiconductor device, or the like, a predetermined thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a substrate. For this, the substrate is subjected to a treatment process, for example, an evaporation process of evaporating a thin film of a specific material on the substrate, a photolithography process using a photosensitive material to selectively expose the thin film, an etching process of removing the selectively exposed portion of the thin film to form a pattern, and the like.

As described above, a sputtering apparatus is used as a device for performing a process on a substrate. The sputtering apparatus mainly performs a vapor deposition process for depositing a thin film on a substrate, and performs a sputtering process by using a physical vapor deposition method.

The sputtering apparatus related to the prior art includes: a support part for supporting the substrate; a Target (Target) disposed apart from the support portion; and a Magnet (Magnet) for generating plasma. The sputtering apparatus according to the related art performs the sputtering process by generating plasma between the target and the substrate supported by the support portion, and depositing a thin film material forming the target on the substrate as a plurality of ionized particles collide with the target by the generated plasma.

However, in the sputtering apparatus according to the related art, the sputtering process is performed by using the plasma generated between the substrate and the target, but the intensity of the plasma varies in different regions. Therefore, the sputtering apparatus according to the related art has the following problems.

First, the sputtering apparatus according to the related art has a difference in plasma intensity between an upper region, a middle region disposed below the upper region, and a lower region disposed below the middle region. In this case, as the sputtering process is performed on the upper portion of the target corresponding to the upper region, the intermediate portion of the target corresponding to the intermediate region, and the lower portion of the target corresponding to the lower region, respectively, a difference in erosion rate occurs. Therefore, the sputtering apparatus according to the related art has a problem that the remaining usable portion cannot be used due to the most eroded portions among the upper portion of the target, the intermediate portion of the target, and the lower portion of the target. Therefore, in the sputtering apparatus according to the related art, as the total usage amount of the target is reduced, the service life of the target is reduced, and thus the process cost is increased by replacing the target or the like. In addition, in the sputtering apparatus according to the related art, as the target replacement cycle is shortened, the time for stopping the entire process is increased due to the replacement of the target, and thus the production efficiency of the substrate for which the sputtering process is completed is reduced due to the reduction of the operation rate.

Second, in the sputtering apparatus according to the related art, since the plasma intensity is different between the upper region, the intermediate region, and the lower region, the difference in the deposition rate of the thin film occurs between the upper portion of the substrate corresponding to the upper region, the intermediate portion of the substrate corresponding to the intermediate region, and the lower portion of the substrate corresponding to the lower region. Therefore, the sputtering apparatus according to the related art has a problem that the quality of the substrate after the sputtering process is degraded, such as the uniformity of the thin film deposited on the substrate is degraded.

Disclosure of Invention

Technical problem

The present invention has been made to solve the above-described problems, and provides a sputtering apparatus and a sputtering apparatus control method capable of preventing a reduction in target use efficiency due to a difference in plasma intensity generated for each region.

The invention provides a sputtering apparatus and a method for controlling the sputtering apparatus, which can prevent the quality of a substrate after a sputtering process from being reduced due to the difference of the intensity of plasmas generated according to different regions.

Technical scheme

To solve the problem, the present invention may include the following structure.

The sputtering apparatus according to the present invention includes: a support part for supporting the substrate; a target spaced apart from the support section with respect to a horizontal direction; an intermediate magnet for adjusting the intensity of plasma generated in an intermediate region disposed between the target and the substrate supported by the support portion with respect to the horizontal direction; an upper magnet for adjusting the intensity of the plasma generated in an upper region disposed above the middle region with respect to the vertical direction; a lower magnet for adjusting the intensity of the plasma generated in a lower region disposed below the intermediate region with respect to the vertical direction; the middle acquisition module is used for measuring the intensity of the plasma in the middle area so as to acquire a middle plasma value; an upper acquisition module that measures an intensity of the plasma of the upper region to acquire an upper plasma value; a lower acquisition module that measures an intensity of the plasma of the lower region to acquire a lower plasma value; an intermediate moving mechanism for moving the intermediate magnet in the horizontal direction; an upper moving mechanism for moving the upper magnet independently in the horizontal direction with respect to the intermediate magnet; and a lower moving mechanism for moving the lower magnet in the horizontal direction independently of the middle magnet and the upper magnet, respectively.

The sputtering apparatus control method according to the present invention may include: a plasma value acquisition step of measuring a plasma intensity of a middle region disposed between a substrate and a target with reference to a horizontal direction to acquire a middle plasma value, measuring a plasma intensity of an upper region disposed on an upper side of the middle region with reference to a vertical direction to acquire an upper plasma value, and measuring a plasma intensity of a lower region disposed on a lower side of the middle region with reference to the vertical direction to acquire a lower plasma value; a comparison step of judging whether the upper plasma value and the lower plasma value are respectively consistent with the middle plasma value; and adjusting an upper distance by which an upper magnet for adjusting an intensity of the plasma generated in the upper region is spaced from the target with reference to the horizontal direction when it is determined that the upper plasma value is different from the middle plasma value in the comparing step, and adjusting a lower distance by which a lower magnet for adjusting an intensity of the plasma generated in the lower region is spaced from the target with reference to the horizontal direction when it is determined that the lower plasma value is different from the middle plasma value in the comparing step.

Advantageous effects

According to the present invention, the following effects can be achieved.

The invention is realized in a mode that the intensity of the plasma can be respectively adjusted by measuring the intensity of the plasma according to different areas during the sputtering process, thereby improving the responsiveness to process conditions which are changed due to various reasons in the process of the sputtering process and further improving the efficiency of the sputtering process.

The present invention is realized in a manner that the intensity of plasma can be measured according to different regions to adjust the intensity of plasma respectively according to different regions, so that the difference in the degree of local erosion occurring on the target can be reduced, and thus not only the total usage amount of the target can be increased, but also the service life of the target can be prolonged.

The invention is realized in a mode that the intensity of the plasma can be measured according to different areas to respectively adjust the intensity of the plasma according to different areas, thereby improving the quality of the substrate which finishes the sputtering process.

Drawings

Fig. 1 is a schematic side sectional view of a sputtering apparatus according to the present invention.

Fig. 2 is a schematic block diagram of a sputtering apparatus according to the present invention.

Fig. 3 is a schematic side sectional view of a target and a magnet portion in the sputtering apparatus according to the present invention.

Fig. 4 is a schematic side sectional view showing a state where a shield portion shields plasma in the sputtering apparatus according to the present invention.

Fig. 5 is a schematic sequence diagram of a sputtering apparatus control method according to the present invention.

Fig. 6 is a schematic side sectional view showing a state in which the intermediate magnet, the upper magnet, and the lower magnet are moved in the sputtering apparatus control method according to the present invention.

Fig. 7 is a schematic sequence diagram of a sputtering apparatus control method according to a modified embodiment of the present invention.

Fig. 8 is a schematic side sectional view showing a state in which the intermediate magnet, the upper magnet, and the lower magnet are moved together in the sputtering apparatus control method according to the modified embodiment of the present invention.

Fig. 9 is a schematic side sectional view showing a state where only the intermediate magnet is further moved in the sputtering apparatus control method according to the modified embodiment of the present invention.

Reference numerals

1: the sputtering device 2: supporting part

3: target 4: magnet part

5: the acquisition unit 6: moving part

7: the shield portion 8: driving part

9: the control unit 100: substrate board

31: target surface 41: intermediate magnet

42: upper magnet 43: lower magnet

51: the intermediate acquisition module 52: upper acquisition module

53: lower acquisition module 61: intermediate moving mechanism

62: upper moving mechanism 63: lower moving mechanism

91: the comparison module 92: control module

93: the conversion module 94: memory module

Detailed Description

Hereinafter, an embodiment of a sputtering apparatus according to the present invention will be described in detail with reference to the drawings.

Referring to fig. 1 to 2, a sputtering apparatus 1 according to the present invention performs a sputtering process on a substrate 100 for manufacturing a display device, a Solar Cell (Solar Cell), a semiconductor device, or the like. A sputtering device 1 according to the present invention includes a support portion 2, a target 3, a magnet portion 4, an acquisition portion 5, and a movement portion 6.

The support 2 is used to support the substrate 100. The support portion 2 may support the substrate 100 such that the substrate 100 stands in parallel with the up-down direction (Z-axis direction). The support portion 2 can support the upper end of the substrate 100 and the lower end of the substrate 100 with reference to the vertical direction (Z-axis direction). The support 2 may be disposed between the acquisition unit 5 and the target 3 with reference to a horizontal direction (X-axis direction). Therefore, the substrate 100 supported by the support portion 2 can be disposed between the capture portion 5 and the target 3 with reference to the horizontal direction (X-axis direction). The horizontal direction (X-axis direction) and the vertical direction (Z-axis direction) may be axial directions arranged perpendicular to each other. The support 2 may be disposed inside a chamber (not shown). The support 2 may be coupled to the chamber. The target 3 and the capturing part 5 may be disposed inside the chamber.

The target 3 is spaced from the support 2 with reference to the horizontal direction (X-axis direction). When the sputtering process corresponds to an evaporation process of evaporating a thin film on the substrate 100, the target 3 may be formed of a thin film material. The target 3 may comprise a target surface 31. The target surface 31 is a surface facing the substrate 100 supported by the support 2. The substrate 100 can include an opposing surface 110 disposed in face-to-face relation with the target surface 31. As the thin film material is released from the target 3 while the sputtering process is performed, erosion (Erosion) of the target surface 31 occurs. Therefore, as the sputtering process is performed, the distance separating the facing surface 110 of the substrate 100 and the target surface 31 of the target 3 from each other is gradually increased with reference to the horizontal direction (X-axis direction).

The target 3 is disposed between the substrate 100 supported by the support 2 and the magnet portion 4 with reference to the horizontal direction (X-axis direction). The target 3 may be configured to stand parallel to the up-down direction (Z-axis direction). The target 3 may be disposed inside the chamber. The target 3 is bonded to the cooling mechanism 200. The cooling mechanism 200 is disposed between the target 3 and the magnet portion 4 with reference to the horizontal direction (X-axis direction). The cooling mechanism 200 may cool the target 3 using a cooling fluid or the like. The cooling mechanism 200 is coupled to the chamber. At this time, the target 3 is bonded to the cooling mechanism 200, thereby being bonded to the chamber by the cooling mechanism 200.

The magnet portion 4 adjusts the intensity of plasma generated between the substrate 100 supported by the support portion 2 and the target 3 with reference to the horizontal direction (X-axis direction). The magnet portion 4 may be disposed at a position spaced apart from the target 3 with reference to the horizontal direction (X-axis direction). The magnet portion 4 may be disposed inside the chamber or outside the chamber.

Referring to fig. 1 to 3, the magnet part 4 may include a middle magnet 41, an upper magnet 42, and a lower magnet 43.

The intermediate magnet 41 is used to adjust the intensity of the plasma generated in the intermediate area CA. The intermediate area CA is disposed in a space between the substrate 100 supported by the support 2 and the target 3 with reference to the horizontal direction (X-axis direction). The intermediate area CA may be shorter than the substrate 100 supported by the support 2 and the target 3, respectively, with reference to the vertical direction (Z-axis direction).

The intermediate magnet 41 is disposed at a position spaced apart from the target 3 by an intermediate distance CD with respect to the horizontal direction (X-axis direction). The intermediate distance CD represents a distance that the intermediate magnet 41 is spaced from the target surface 31 with respect to the horizontal direction (X-axis direction). Thus, the intermediate distance CD may vary as the target surface 31 erodes. In this case, in the target 3, the intermediate target surface 31a of the intermediate target portion 3a is eroded. The target intermediate portion 3a is a portion of the target 3 and corresponds to the intermediate area CA. The intermediate distance CD may be a distance that the intermediate magnet 41 is spaced from the intermediate target surface 31a of the target intermediate portion 3a with respect to the horizontal direction (X-axis direction). When the intermediate distance CD varies, the intensity of the plasma generated in the intermediate area CA varies. The substrate 100 can be supported by the support portion 2 so that the substrate intermediate portion 100a is disposed at a position corresponding to the target intermediate portion 3 a. At this time, the intermediate opposing surface 110a of the substrate intermediate portion 100a and the intermediate target surface 31a of the target intermediate portion 3a may be arranged to face each other.

The upper magnet 42 is used to adjust the intensity of the plasma generated in the upper region UA. The upper area UA is disposed in a space above the intermediate area CA with reference to the vertical direction (Z-axis direction). The upper region UA may be disposed between the substrate 100 supported by the support 2 and the target 3 with reference to the horizontal direction (X-axis direction). The upper region UA is shorter than the substrate 100 supported by the support 2 and the target 3, respectively, with respect to the vertical direction (Z-axis direction). The upper area UA is shorter than the middle area CA with respect to the vertical direction (Z-axis direction).

The upper magnet 42 is disposed at a position spaced apart from the target 3 by an upper distance UD with respect to the horizontal direction (X-axis direction). The upper distance UD represents a distance that the upper magnet 42 is spaced from the target surface 31 with respect to the horizontal direction (X-axis direction). Therefore, the upper distance UD may vary as the target surface 31 erodes. At this time, in the target 3, the upper target surface 31b of the target upper portion 3b is eroded. The target upper portion 3b is a portion of the target 3 and indicates a portion corresponding to the upper region UA. The upper distance UD represents a distance that the upper magnet 42 is spaced from the upper target surface 31b of the target upper portion 3b with respect to the horizontal direction (X-axis direction). When the upper distance UD varies, the intensity of plasma generated in the upper region UA varies. The target upper portion 3b may be disposed above the target intermediate portion 3a with respect to the vertical direction (Z-axis direction). The substrate 100 may be supported by the support 2 such that the substrate upper portion 100b is disposed at a position corresponding to the target upper portion 3 b. At this time, the upper opposing surface 110b of the substrate upper portion 100b and the upper target surface 31b of the target upper portion 3b may be disposed to face each other.

The lower magnet 43 is used to adjust the intensity of the plasma generated in the lower area DA. The lower area DA is a space disposed below the intermediate area CA with respect to the vertical direction (Z-axis direction). The lower area DA is disposed between the substrate 100 supported by the support 2 and the target 3 with reference to the horizontal direction (X-axis direction). The lower area DA is shorter than the substrate 100 supported by the support 2 and the target 3 with respect to the vertical direction (Z-axis direction). The lower area DA is shorter than the intermediate area CA with respect to the vertical direction (Z-axis direction). The lower area DA and the upper area UA may have the same length with respect to the vertical direction (Z-axis direction).

The lower magnet 43 is disposed at a position spaced apart from the target 3 by a lower distance DD with respect to the horizontal direction (X-axis direction). The lower distance DD represents a distance that the lower magnet 43 is spaced from the target surface 31 with respect to the horizontal direction (X-axis direction). Thus, the lower distance DD may vary as the target surface 31 erodes. At this time, in the target 3, the lower target surface 31c of the target lower portion 3c is eroded. The target lower portion 3c is a portion of the target 3 and indicates a portion corresponding to the lower region UD. The lower distance DD may indicate a distance by which the lower magnet 43 is spaced from the lower target surface 31c of the target lower portion 3c with reference to the horizontal direction (X-axis direction). When the lower distance DD varies, the intensity of plasma generated in the lower area DA varies. The target lower portion 3c may be disposed below the target intermediate portion 3a with reference to the vertical direction (Z-axis direction). The substrate 100 may be supported by the support part 2 such that a substrate lower part 100c is disposed at a position corresponding to the target lower part 3 c. At this time, the lower opposing surface 110c of the substrate lower portion 100c and the lower target surface 31c of the target lower portion 3c may be arranged to face each other.

Referring to fig. 1 to 3, the acquisition section 5 is configured to measure the intensity of plasma generated between the substrate 100 supported by the support 2 and the target 3 to acquire a plasma value. The plasma value may be an intensity value of the plasma being measured. The acquisition section 5 can measure the intensity of the plasma using a spectrometer or spectrograph to acquire the plasma value. The acquiring unit 5 can measure the intensity of the plasma light transmitted through the substrate 100, thereby acquiring the plasma value. When the sputtering process corresponds to a deposition process for depositing a thin film on the substrate 100, the obtaining part 5 may measure the intensity of plasma light transmitted through the thin film deposited on the substrate 100 and the substrate 100, thereby obtaining the plasma value. The acquisition unit 5 may be disposed at a position spaced apart from the support 2 with reference to the horizontal direction (X-axis direction). The acquisition part 5 may be disposed inside the chamber.

The acquisition section 5 may include an intermediate acquisition module 51, an upper acquisition module 52, and a lower acquisition module 53.

The intermediate obtaining module 51 is configured to measure the intensity of the plasma in the intermediate area CA to obtain an intermediate plasma value. The middle acquiring module 51 may be disposed at a height corresponding to the middle area CA with reference to the up-down direction (Z-axis direction). The middle acquiring module 51 may be disposed at heights spaced apart from the upper end of the middle area CA and the lower end of the middle area CA by the same distance, respectively, with reference to the up-down direction (Z-axis direction). The intermediate acquisition module 51 may be disposed at a position spaced apart from the intermediate area CA with reference to the horizontal direction (X-axis direction). The intermediate acquisition module 51 may be coupled to the chamber.

The upper acquisition module 52 is configured to measure the intensity of the plasma in the upper area UA to acquire an upper plasma value. The upper acquisition module 52 may be disposed at a height corresponding to the upper area UA with reference to the vertical direction (Z-axis direction). The upper acquisition module 52 may be disposed at a higher elevation than the middle acquisition module 51. The upper acquisition module 52 may be disposed at a height that is spaced apart from an upper end of the upper area UA and a lower end of the upper area UA by the same distance, respectively, with respect to the vertical direction (Z-axis direction). The upper acquisition module 52 may be disposed at a position spaced apart from the upper area UA with reference to the horizontal direction (X-axis direction). The upper access module 52 may be coupled to the chamber.

The lower acquisition module 53 is configured to measure the intensity of the plasma for the lower area DA to acquire a lower plasma value. The lower acquisition module 53 may be disposed at a height corresponding to the lower area DA with reference to the vertical direction (Z-axis direction). The lower acquisition module 53 may be disposed at a lower height than the intermediate acquisition module 51. The lower acquisition module 53 may be disposed at a height that is spaced apart from an upper end of the lower area DA and a lower end of the lower area DA by the same distance, respectively, with reference to the vertical direction (Z-axis direction). The lower acquisition module 53 may be disposed at a position spaced apart from the lower area DA with reference to the horizontal direction (X-axis direction). The lower access module 53 may be coupled to the chamber.

The acquiring unit 5 according to the modified example of the present invention may acquire the intermediate plasma value, the upper plasma value, and the lower plasma value by using an average value for each of the intermediate region CA, the upper region UA, and the lower region DA. At this time, the intermediate acquisition module 51, the upper acquisition module 52, and the lower acquisition module 53 may be implemented as follows.

After the intermediate acquisition module 51 measures the intensity of the plasma at a plurality of different positions of the intermediate area CA, an average value is derived from the measured intensity values of the plurality of plasmas to acquire the intermediate plasma value. The intermediate acquisition module 51 may include a plurality of intermediate measurement mechanisms 511 (shown in fig. 2) and an intermediate acquisition mechanism 512 (shown in fig. 2).

The plurality of intermediate measuring mechanisms 511 are configured to measure the intensity of the plasma at a plurality of different positions of the intermediate area CA, respectively. The plurality of intermediate measurement mechanisms 511 provide the intensity values of the plasma, which are respectively measured, to the intermediate acquisition mechanism 512. The intermediate measurement mechanism 511 may be a spectrometer or spectrometer. The plurality of intermediate measuring mechanisms 511 are disposed at positions spaced apart by the same distance from each other.

The intermediate acquiring means 512 is configured to derive an average value from the intensities of the plurality of plasmas measured by the plurality of intermediate measuring means 511 to acquire the intermediate plasma value. That is, the intermediate plasma value corresponds to an average value of the intensity values of the plurality of plasmas measured by the plurality of intermediate measuring means 511. For example, when the intermediate acquisition module 51 includes three intermediate measurement mechanisms 511, the intermediate acquisition mechanism 512 may add the intensity values of the plurality of plasmas measured by the respective intermediate measurement mechanisms 511 and divide by three to derive an average value, and set the derived average value as the intermediate plasma value. Therefore, the intermediate acquiring module 51 may acquire the intermediate plasma value using the average value.

After the upper acquisition module 52 measures the plasma intensity at a plurality of different positions of the upper area UA, an average value is derived from the measured plasma intensity values to acquire the upper plasma value. The upper acquisition module 52 may include a plurality of upper measurement mechanisms 521 (shown in fig. 2) and an upper acquisition mechanism 522 (shown in fig. 2).

The plurality of upper measuring units 521 are configured to measure the intensity of the plasma at a plurality of different positions in the upper area UA, respectively. The plurality of upper measuring means 521 may provide the upper acquiring means 522 with the intensity values of the plasma respectively measured. The upper measurement mechanism 521 may be a spectrometer or spectrometer. The plurality of upper measuring mechanisms 521 may be disposed at positions spaced apart by the same distance from each other.

The upper acquisition means 522 is configured to derive an average value from the intensities of the plurality of plasmas measured by the plurality of upper measurement means 521 to acquire the upper plasma value. That is, the upper plasma value corresponds to an average value of the intensity values of the plurality of plasmas measured by the plurality of upper measuring means 521. For example, when the upper acquisition module 52 includes two upper measurement mechanisms 521, the upper acquisition mechanism 522 may add the intensity values of the plurality of plasmas measured by the respective upper measurement mechanisms 521 and divide by two to derive an average value, and set the derived average value as the upper plasma value. Accordingly, the upper acquisition module 52 may acquire the upper plasma value using the average value.

The lower acquisition module 53 measures the intensity of the plasma at a plurality of different positions of the lower area DA, and then derives an average value from the measured intensity values of the plurality of plasmas to acquire the lower plasma value. The lower acquisition module 53 may include a plurality of lower measurement mechanisms 531 (shown in fig. 2) and a lower acquisition mechanism 532 (shown in fig. 2).

The plurality of lower measurement mechanisms 531 are configured to measure the intensity of the plasma at a plurality of different positions of the lower area DA, respectively. The plurality of lower measuring mechanisms 531 may provide the lower acquiring mechanism 532 with the intensity values of the plasma respectively measured. The lower measurement mechanism 531 may be a spectrometer or spectrometer. The plurality of lower measuring mechanisms 531 may be disposed at positions spaced apart by the same distance from each other.

The lower acquisition mechanism 532 is configured to derive an average value from the intensities of the plurality of plasmas measured by the plurality of lower measurement mechanisms 531 to acquire the lower plasma value. That is, the lower plasma value corresponds to an average value of the intensity values of the plurality of plasmas measured by the plurality of lower measuring mechanisms 531. For example, when the lower acquisition module 53 includes two lower measurement mechanisms 531, the lower acquisition mechanism 532 may add up the intensity values of the plurality of plasmas measured by the respective lower measurement mechanisms 531 and divide by two to derive an average value, and set the derived average value as the lower plasma value. Therefore, the lower acquisition module 53 may acquire the lower plasma value using the average value.

Referring to fig. 1 to 3, the moving portion 6 is for moving the magnet portion 4. The moving portion 6 can move the magnet portion 4 in the horizontal direction (X-axis direction) to adjust the distance that the magnet portion 4 is spaced from the target 3. Therefore, the moving unit 6 can adjust the intensity of the plasma generated between the substrate 100 supported by the support 2 and the target 3 with reference to the horizontal direction (X-axis direction). The moving part 6 may be disposed inside the chamber or outside the chamber. The moving unit 6 may move the magnet unit 4 by a cylinder system using a hydraulic cylinder or a pneumatic cylinder, a Gear system using a Rack Gear (Rack Gear) and a Pinion Gear (Pinion Gear), a Ball Screw system using a Ball Screw (Ball Screw) and a Ball Nut (Ball Nut), a linear motor system using a Coil (Coil) and a permanent magnet, or the like.

The moving part 6 may include an intermediate moving mechanism 61, an upper moving mechanism 62, and a lower moving mechanism 63.

The intermediate moving mechanism 61 is configured to move the intermediate magnet 41. The intermediate moving mechanism 61 can move the intermediate magnet 41 in the horizontal direction (X-axis direction) to adjust the intermediate distance CD. Therefore, the intermediate moving mechanism 61 can adjust the intensity of the plasma generated in the intermediate area CA. When the intermediate moving mechanism 61 moves the intermediate magnet 41 in the first direction (FD arrow direction), the intermediate distance CD can be increased. Therefore, the intensity of the plasma generated in the intermediate area CA can be reduced, thereby reducing the intermediate plasma value. When the intermediate moving mechanism 61 moves the intermediate magnet 41 in the second direction (SD arrow direction), the intermediate distance CD can be reduced. Therefore, the intensity of the plasma generated in the middle area CA can be increased, thereby increasing the middle plasma value. The second direction (SD arrow direction) and the first direction (FD arrow direction) are directions parallel to the horizontal direction (X axis direction) and opposite to each other. The intermediate moving mechanism 61 is coupled to the chamber. The intermediate moving mechanism 61 is coupled to the intermediate magnet 41. The intermediate moving mechanism 61 can move the intermediate magnet 41 according to the intermediate plasma value acquired by the intermediate acquisition module 51. The intermediate acquisition module 51 is capable of communicating the intermediate plasma values to the intermediate moving mechanism 61 using at least one of wired communication and wireless communication.

The upper moving mechanism 62 is used to move the upper magnet 42. The upper moving mechanism 62 can move the upper magnet 42 in the horizontal direction (X-axis direction) to adjust the upper distance UD. Therefore, the upper moving mechanism 62 can adjust the intensity of the plasma generated in the upper region UA. When the upper moving mechanism 62 moves the upper magnet 42 in the first direction (FD arrow direction), the upper distance UD can be increased. Therefore, the intensity of the plasma generated in the upper region UA can be reduced, thereby reducing the upper plasma value. When the upper moving mechanism 62 moves the upper magnet 42 in the second direction (direction of the SD arrow), the upper distance UD can be reduced. Therefore, the intensity of the plasma generated in the upper region UA can be increased, thereby increasing the upper plasma value. The upper moving mechanism 62 may be coupled to the chamber. The upper moving mechanism 62 may be combined with the upper magnet 42. The upper moving mechanism 62 can move the upper magnet 42 according to the upper plasma value acquired by the upper acquisition module 52. The upper acquisition module 52 is capable of communicating the upper plasma values to the upper movement mechanism 62 using at least one of wired and wireless communication.

The lower moving mechanism 63 is used to move the lower magnet 43. The lower moving mechanism 63 can move the lower magnet 43 in the horizontal direction (X-axis direction) to adjust the lower distance DD. Therefore, the lower moving mechanism 63 can adjust the intensity of the plasma generated in the lower area DA. When the lower moving mechanism 63 moves the lower magnet 43 in the first direction (FD arrow direction), the lower distance DD can be increased. Therefore, the intensity of the plasma generated in the lower area DA can be reduced, thereby reducing the lower plasma value. When the lower moving mechanism 63 moves the lower magnet 43 in the second direction (SD arrow direction), the lower distance DD can be reduced. Therefore, the intensity of the plasma generated in the lower area DA can be increased, thereby increasing the lower plasma value. The lower moving mechanism 63 is coupled to the chamber. The lower magnet 43 is coupled to the lower moving mechanism 63. The lower moving mechanism 63 can move the lower magnet 43 according to the lower plasma value acquired by the lower acquisition module 53. The lower acquisition module 53 is capable of transmitting the lower plasma value to the lower moving mechanism 63 using at least one of wired communication and wireless communication.

The lower moving mechanism 63, the upper moving mechanism 62, and the intermediate moving mechanism 61 can move the lower magnet 43, the upper magnet 42, and the intermediate magnet 41 independently. Accordingly, the lower moving mechanism 63, the upper moving mechanism 62, and the intermediate moving mechanism 61 can adjust the lower distance DD, the upper distance UD, and the intermediate distance CD, respectively, to adjust the lower plasma value, the upper plasma value, and the intermediate plasma value, respectively. Therefore, the sputtering apparatus 1 according to the present invention can achieve the following functional effects.

First, the sputtering apparatus 1 according to the present invention can measure the intensity of plasma in different regions, and adjust the intensity of plasma in different regions. Therefore, the sputtering apparatus 1 according to the present invention can measure the intensity of plasma in different regions during the sputtering process to sense a change in process conditions such as erosion locally occurring on the target, and can adjust the intensity of plasma in different regions respectively in a manner corresponding to the changed process conditions. Therefore, the sputtering apparatus 1 according to the present invention can improve the responsiveness to process conditions that vary due to various factors during the sputtering process, thereby improving the efficiency of the sputtering process.

Secondly, the sputtering apparatus 1 according to the present invention can adjust the lower plasma value, the upper plasma value, and the intermediate plasma value so as to reduce the difference in the degree of erosion occurring on the lower target surface 31c, the upper target surface 31b, and the intermediate target surface 31a, respectively. Therefore, the sputtering apparatus 1 according to the present invention can increase the total amount of the target 3 used, thereby extending the life of the target 3. Therefore, the sputtering apparatus 1 according to the present invention can reduce the process cost of the sputtering process. In addition, the sputtering apparatus 1 according to the present invention can extend the replacement cycle of the target 3 by extending the service life of the target 3. Therefore, the sputtering apparatus 1 according to the present invention can reduce the time required to stop the entire process by replacing the target 3, and thus can improve the productivity of the substrate for which the sputtering process is completed by increasing the operating rate.

Thirdly, the sputtering apparatus 1 according to the present invention can adjust the lower plasma value, the upper plasma value, and the intermediate plasma value, respectively, so that the sputtering process can be performed after the lower plasma value, the upper plasma value, and the intermediate plasma value are adjusted to be the same. Therefore, the sputtering apparatus 1 according to the present invention can improve the quality of the substrate 100 subjected to the sputtering process. For example, when the sputtering process is a deposition process, the sputtering apparatus 1 according to the present invention can improve the uniformity of the thickness and the quality of the thin film deposited on the substrate 100.

Referring to fig. 1 to 4, the sputtering apparatus 1 according to the present invention may include a shield portion 7 (shown in fig. 4) and a drive portion 8 (shown in fig. 4).

The shield portion 7 is used for shielding plasma. When the substrate 100 is not present on the support 2, the shielding part 7 may be disposed between the acquisition part 5 and the support 2 with reference to the horizontal direction (X-axis direction). Therefore, the shielding portion 7 can protect the acquisition portion 5 from plasma. Therefore, the shielding part 7 can prevent the acquisition part 5 from being damaged or broken by plasma or the accuracy of the plasma value acquired by the acquisition part 5 from being lowered. The shielding part 7 may be configured to shield the middle area CA, the upper area UA, and the lower area DA. Therefore, the shield portion 7 can protect the intermediate extraction module 51, the upper extraction module 52, and the lower extraction module 53 from the plasma generated in each of the intermediate region CA, the upper region UA, and the lower region DA. Although not shown, when the substrate 100 is not present on the support portion 2, the shield portion 7 may be disposed between the support portion 2 and the target 3 with reference to the horizontal direction (X-axis direction). Although not shown, the shielding part 7 may be formed to shield only a portion for measuring the intensity of plasma in each of the middle acquisition module 51, the upper acquisition module 52, and the lower acquisition module 53.

The driving part 8 is used to move the shielding part 7. The driving portion 8 can move the shielding portion 7 between a shielding position and an isolating position. The shielding position is a position where the shielding portion 7 shields plasma. For example, when the shielding part 7 is moved to the shielding position, the shielding part 7 may be disposed between the acquisition part 5 and the support part 2 with reference to the horizontal direction (X-axis direction). The isolation location is a location spaced from the shielding location. When the shielding part 7 moves to the isolation position, the shielding part 7 is disposed at a position not to block the space between the acquisition part 5 and the support part 2 with reference to the horizontal direction (X-axis direction).

The driving unit 8 may move the shielding unit 7 to the shielding position and the isolation position according to whether or not the substrate 100 supported by the support unit 2 is present. When the substrate 100 is not present on the support 2, the driving part 8 can move the shielding part 7 to the shielding position. When the substrate 100 is present on the support 2, the driving part 8 can move the shielding part 7 to the isolation position. The driving part 8 can move the shielding part 7 according to a sensing signal provided from a sensor (not shown) for sensing whether the substrate 100 supported by the supporting part 2 exists.

Referring to fig. 1 to 3, the sputtering apparatus 1 according to the present invention may include a control section 9.

The control section 9 is configured to control the moving section 6 according to the plasma value acquired by the acquisition section 5. The control unit 9 may receive the plasma value from the acquisition unit 5 using at least one of wired communication and wireless communication. At this time, the control part 9 may receive the middle plasma value, the upper plasma value, and the lower plasma value from the middle acquisition module 51, the upper acquisition module 52, and the lower acquisition module 53, respectively. The control unit 9 can control the mobile unit 6 using at least one of wired communication and wireless communication. In this case, the controller 9 can control the intermediate movement mechanism 61, the upper movement mechanism 62, and the lower movement mechanism 63 to adjust the intermediate distance CD, the upper distance UD, and the lower distance DD, respectively. Therefore, the controller 9 can adjust the intensity of the plasma generated in the middle area CA, the intensity of the plasma generated in the upper area UA, and the intensity of the plasma generated in the lower area DA, respectively.

The control section 9 may include a comparison module 91 (shown in fig. 2) and a control module 92 (shown in fig. 2).

The comparing module 91 is configured to determine whether the upper plasma value and the lower plasma value are respectively consistent with the middle plasma value. The comparison module 91 can compare the upper plasma value and the middle plasma value received from the upper acquisition module 51 and the middle acquisition module 51, respectively, to determine whether the upper plasma value and the middle plasma value are consistent. In this case, the upper plasma value may correspond to an average value derived from intensity values of a plurality of measured plasmas after measuring the intensity of the plasmas at a plurality of different positions of the upper region UA. The intermediate plasma value may correspond to an average value derived from measured intensity values of a plurality of plasmas after measuring the intensity measurements of the plasmas at a plurality of different positions of the intermediate area CA. The comparison module 91 can compare the lower plasma value and the middle plasma value received from the lower acquisition module 51 and the middle acquisition module 51, respectively, to determine whether the lower plasma value and the middle plasma value are consistent. At this time, the lower plasma value may correspond to an average value derived from the measured intensity values of the plurality of plasmas after the intensities of the plasmas are measured for the plurality of different positions of the lower area DA. The intermediate plasma value may correspond to an average value derived from measured intensity values of a plurality of plasmas after measuring the intensity of the plasmas for a plurality of different positions of the intermediate area CA. The comparison module 91 can provide the control module 92 with the determination result as to whether the upper plasma value and the lower plasma value respectively coincide with the intermediate plasma value.

The control module 92 is configured to control the middle moving mechanism 61, the upper moving mechanism 62, and the lower moving mechanism 63 respectively. Therefore, the control module 92 can move the intermediate magnet 41, the upper magnet 42, and the lower magnet 43, respectively, to adjust the intermediate distance CD, the upper distance UD, and the lower distance DD, respectively. Accordingly, the control module 92 can adjust the intensity of the plasma generated in the middle area CA, the intensity of the plasma generated in the upper area UA, and the intensity of the plasma generated in the lower area DA, respectively.

The control module 92 is capable of controlling the intermediate moving mechanism 61 according to the intermediate plasma value. Therefore, the control module 92 can move the intermediate magnet 41 to adjust the intermediate distance CD, thereby adjusting the intensity of the plasma generated in the intermediate area CA. The control module 92 is also capable of controlling the intermediate moving mechanism 61 to bring the intermediate plasma value to a preset value. The control module 92 is also capable of controlling the intermediate moving mechanism 61 to bring the intermediate distance CD to a preset distance.

The control module 92 can control the upper moving mechanism 62 based on the upper plasma value. Accordingly, the control module 92 can move the upper magnet 42 to adjust the upper distance UD, and thus the intensity of the plasma generated in the upper region UA. The control module 92 can control the upper movement mechanism 62 to bring the upper plasma value into agreement with the intermediate plasma value. At this time, when the comparison module 91 judges that the upper plasma value is different from the intermediate plasma value, the control module 92 can control the upper moving mechanism 62 to adjust the upper distance UD. For example, when the upper plasma value is smaller than the intermediate plasma value, the control module 92 can control the upper moving mechanism 62 to decrease the upper distance UD. At this time, the upper magnet 42 may move in the second direction (SD arrow direction). When the upper plasma value is greater than the intermediate plasma value, the control module 92 can control the upper moving mechanism 62 to increase the upper distance UD. At this time, the upper magnet 42 may move in the first direction (FD arrow direction). The control module 92 is also capable of controlling the upper moving mechanism 62 to bring the upper plasma value to a preset value. The control module 92 is also capable of controlling the upper moving mechanism 62 to bring the upper distance UD to a preset distance.

The control module 92 can control the lower moving mechanism 63 according to the lower plasma value. Accordingly, the control module 92 can move the lower magnet 43 to adjust the lower distance DD and thereby adjust the intensity of the plasma generated in the lower area DA. The control module 92 can control the lower moving mechanism 63 to make the lower plasma value coincide with the intermediate plasma value. At this time, when the comparison module 91 determines that the lower plasma value is different from the middle plasma value, the control module 92 can control the lower moving mechanism 63 to adjust the lower distance DD. For example, the control module 92 can control the lower moving mechanism 63 to decrease the lower distance DD when the lower plasma value is less than the intermediate plasma value. At this time, the lower magnet 43 moves in the second direction (SD arrow direction). When the lower plasma value is greater than the intermediate plasma value, the control module 92 can control the lower moving mechanism 63 to increase the lower distance DD. At this time, the lower magnet 43 moves in the first direction (FD arrow direction). The control module 92 is also capable of controlling the lower moving mechanism 63 to bring the lower plasma level to a preset level. The control module 92 is also capable of controlling the lower moving mechanism 63 to bring the lower distance DD to a preset distance.

The control section 9 may include a conversion module 93 (shown in fig. 2).

The conversion module 93 is configured to determine whether the intermediate plasma value is greater than a preset conversion value. The converted value may be an intermediate plasma value at which, as erosion occurs on the target 3 due to the progress of the sputtering process, it is not possible to compensate for differences in erosion rates that occur in the target intermediate portion 3a, the target upper portion 3b, and the target lower portion 3c, respectively, by adjusting only the upper distance UD and the lower distance DD. That is, the converted value may be an intermediate plasma value that requires adjustment of all of the upper distance UD, the lower distance DD, and the intermediate distance CD to compensate for a difference in erosion rate occurring in the target intermediate portion 3a, the target upper portion 3b, and the target lower portion 3c, respectively. The conversion value may vary according to variations in process conditions such as a thin film material forming the target 3, a kind of the sputtering process, and the like. The conversion value may be derived by a preliminary test or the like and set in advance by a user.

The conversion module 93 provides the control module 92 with the determination result as to whether the intermediate plasma value is greater than the conversion value. When the intermediate plasma value is equal to or lower than the conversion value, the control module 92 may control the upper moving mechanism 62 and the lower moving mechanism 63 so that the upper plasma value and the lower plasma value are respectively equal to the intermediate plasma value. When the intermediate plasma value is greater than the conversion value, the control module 92 may move the intermediate magnet 41, the upper magnet 42, and the lower magnet 43 together, and then further move only the intermediate magnet 41. At this time, the control module 92 may move the middle magnet 41, the upper magnet 42, and the lower magnet 43 together so that the middle plasma value reaches a preset first reference value, and then move only the middle magnet 41 further so that the middle plasma value reaches a preset second reference value. The first reference value and the second reference value may be respectively intermediate plasma values that compensate for differences in erosion rates occurring in the target intermediate portion 3a, the target upper portion 3b, and the target lower portion 3c, respectively, after the intermediate plasma values are greater than the conversion values as erosion occurs in the target 3 due to the progress of the sputtering process. The first reference value and the second reference value may be derived by a test in advance, and may be set in advance by a user, while varying according to process conditions. The first reference value and the second reference value may be set to values different from each other. The second reference value may be an intermediate plasma value smaller than the first reference value. The second reference value may be an intermediate plasma value larger than the first reference value. The second reference value and the first reference value may be stored in a storage module 94 (shown in fig. 2) included in the control unit 9.

Wherein the moving part 6 may comprise an integral moving mechanism 64 (shown in fig. 2).

The integral moving mechanism 64 is configured to move the intermediate magnet 41, the upper magnet 42, and the lower magnet 43 together. The integral moving mechanism 64 can move the intermediate moving mechanism 61, the upper moving mechanism 62, and the lower moving mechanism 63, and thereby move the intermediate magnet 41, the upper magnet 42, and the lower magnet 43 together. At this time, the intermediate movement mechanism 61, the upper movement mechanism 62, and the lower movement mechanism 63 can move the intermediate magnet 41, the upper magnet 42, and the lower magnet 43, respectively, in a state of being coupled to the integral movement mechanism 64. When the intermediate plasma value is greater than the conversion value, the integral movement mechanism 64 can move the intermediate magnet 41, the upper magnet 42, and the lower magnet 43 together so that the intermediate plasma value reaches the first reference value. The integral moving mechanism 64 can move the intermediate magnet 41, the upper magnet 42, and the lower magnet 43 together under the control of the control module 92.

Hereinafter, an embodiment of a method for controlling a sputtering apparatus according to the present invention will be described in detail with reference to the drawings.

Referring to fig. 1 to 6, a sputtering apparatus control method according to the present invention is for controlling a sputtering apparatus that performs a sputtering process on a substrate 100 for manufacturing a display apparatus, a solar cell, a semiconductor device, or the like. The sputtering apparatus 1 according to the present invention described above is controlled by the sputtering apparatus control method according to the present invention, and the sputtering process can be performed on the pair of substrates 100.

The sputtering apparatus control method according to the present invention may include a plasma value acquisition step S10, a comparison step S20, and an adjustment step S30.

In the plasma value acquisition step S10, the middle plasma value, the upper plasma value, and the lower plasma value are acquired. The plasma value acquisition step S10 may be performed by the acquisition section 5. The intermediate plasma value may be obtained by the intermediate obtaining module 51 measuring the intensity of the plasma for the intermediate area CA. The upper plasma value may be obtained by the upper acquisition module 52 measuring the intensity of the plasma for the upper area UA. The lower plasma value may be acquired by the lower acquisition module 53 measuring the intensity of plasma for the lower area DA.

In the comparing step S20, it is determined whether the upper plasma value and the lower plasma value respectively coincide with the intermediate plasma value. The upper plasma value, the lower plasma value, and the middle plasma value are respectively acquired through the plasma value acquisition step S10. The comparison step S20 may be performed by the control unit 9. In the comparing step S20, it is determined by the comparing module 91 whether the upper plasma value coincides with the middle plasma value, and at the same time, it is determined by the comparing module 91 whether the lower plasma value coincides with the middle plasma value.

In the adjusting step S30, at least one of the upper distance UD and the lower distance DD is adjusted. The adjusting step S30 may be performed when it is determined in the comparing step S20 that at least one of the upper plasma value and the lower plasma value is different from the middle plasma value. The adjusting step S30 may be performed by the moving part 6. The adjustment step S30 may be performed by the control module 92 controlling the moving unit 6.

For example, when it is determined in the comparison step S20 that the upper plasma value is different from the intermediate plasma value, the adjustment step S30 may be performed by moving the upper magnet 42 by the upper moving mechanism 62. At this time, when the upper plasma value is greater than the intermediate plasma value, the adjusting step S30 may be performed by the upper moving mechanism 62 moving the upper magnet 42 in the first direction (FD arrow direction). Therefore, the intensity of the plasma generated in the upper region UA can be reduced by increasing the upper distance UD. When the upper plasma value is smaller than the intermediate plasma value, the adjusting step S30 may be performed by the upper moving mechanism 62 moving the upper magnet 42 in the second direction (SD arrow direction). Therefore, the intensity of the plasma generated in the upper region UA can be increased by reducing the upper distance UD. The upper moving mechanism 62 may also move the upper magnet 42 according to the control of the control module 92.

For example, when it is determined in the comparison step S20 that the lower plasma value is different from the intermediate plasma value, the adjustment step S30 may be performed by the lower moving mechanism 63 moving the lower magnet 43. At this time, when the lower plasma value is greater than the intermediate plasma value, the adjusting step S30 may be performed by the lower moving mechanism 63 moving the lower magnet 43 in the first direction (FD arrow direction). Therefore, the intensity of the plasma generated in the lower area DA can be reduced by increasing the lower distance DD. When the lower plasma value is smaller than the intermediate plasma value, the adjusting step S30 may be performed by the lower moving mechanism 63 moving the lower magnet 43 in the second direction (SD arrow direction). Therefore, the intensity of the plasma generated in the lower area DA can be increased by decreasing the lower distance DD. The lower moving mechanism 63 may move the lower magnet 43 according to the control of the control module 92.

As described above, when it is determined that at least one of the upper plasma value and the lower plasma value is different from the middle plasma value, the adjusting step S30 can adjust at least one of the upper distance UD and the lower distance DD so as to reduce the deviation between the upper plasma value, the lower plasma value, and the middle plasma value. In the adjusting step S30, the upper distance UD and the lower distance DD may be adjusted to be the same distance or different distances.

Therefore, the sputtering apparatus control method according to the present invention can achieve the following functional effects.

First, the control method of the sputtering apparatus according to the present invention can measure the intensity of the plasma for each of the different regions, thereby adjusting the intensity of the plasma for each of the different regions. Therefore, the sputtering apparatus control method according to the present invention can measure the intensity of plasma in different regions during the sputtering process to sense a change in process conditions such as erosion locally occurring on the target, and can adjust the intensity of plasma in different regions respectively in a manner corresponding to the changed process conditions. Therefore, the sputtering apparatus control method according to the present invention can improve the responsiveness to process conditions that vary due to various factors during the sputtering process, thereby improving the efficiency of the sputtering process.

Secondly, the method for controlling a sputtering apparatus according to the present invention can reduce the difference in the degree of erosion occurring on each of the lower target surface 31c, the upper target surface 31b, and the intermediate target surface 31 a. Therefore, the control method of the sputtering apparatus according to the present invention can increase the total amount of the target 3 used, thereby reducing the process cost of the sputtering process, and increase the operating rate by extending the lifetime of the target 3, thereby improving the productivity of the substrate on which the sputtering process is performed.

Third, the method for controlling a sputtering apparatus according to the present invention can perform the sputtering process after adjusting the lower plasma value, the upper plasma value, and the middle plasma value to be equal to each other, thereby improving the quality of the substrate 100 on which the sputtering process is performed. For example, when the sputtering process is a deposition process, the method for controlling a sputtering apparatus according to the present invention can improve the uniformity of the thickness and quality of a thin film deposited on the substrate 100.

Wherein the adjusting step S30 may be performed by adjusting at least one of the upper distance UD and the lower distance DD while maintaining the intermediate distance CA. That is, in the adjustment step S30, the intermediate movement mechanism 61 does not move the intermediate magnet 41 but maintains the stopped state. Therefore, the method for controlling a sputtering apparatus according to the present invention can adjust the lower plasma value and the upper plasma value so that the lower plasma value and the upper plasma value match the intermediate plasma value, based on the intermediate plasma value. This is to consider that erosion occurs at a higher erosion rate in the upper target portion 3b and the lower target portion 3c than in the intermediate target portion 3a even if the sputtering process is performed with plasma of the same intensity. Therefore, the sputtering apparatus control method according to the present invention can further increase the total usage amount of the target 3 and the service life of the target 3.

Wherein, when it is determined in the comparing step S20 that both the upper plasma value and the lower plasma value are consistent with the middle plasma value, the upper plasma value, and the lower plasma value may be respectively acquired again in the plasma value acquiring step S10. After the intermediate plasma value, the upper plasma value, and the lower plasma value are respectively re-acquired in the plasma value acquisition step S10, it may be determined whether the re-acquired upper plasma value and lower plasma value respectively coincide with the re-acquired intermediate plasma value in the comparison step S20. The adjusting step S30 may be performed when it is determined in the comparing step S20 that at least one of the re-acquired upper plasma value and lower plasma value is different from the re-acquired middle plasma value. Therefore, even if the intermediate plasma value fluctuates due to the erosion of the target intermediate portion 3a and the intermediate distance CA fluctuates, the method for controlling a sputtering apparatus according to the present invention can control at least one of the upper distance UD and the lower distance DD so that the upper plasma value and the lower plasma value match the fluctuating intermediate plasma value. Therefore, the sputtering apparatus control method according to the present invention can adjust the lower plasma value, the upper plasma value, and the intermediate plasma value to be the same as each other during the sputtering process. Therefore, the method for controlling the sputtering apparatus according to the present invention can improve the uniformity of the thickness and quality of the thin film deposited on the substrate 100, and further increase the total amount of the target 3 used.

Wherein, when the upper plasma value and the lower plasma value completely coincide with the middle plasma value, respectively, in the comparing step S20, it can be determined that the upper plasma value and the lower plasma value coincide with the middle plasma value, respectively. According to a modified embodiment thereof, in the comparing step S20, when the difference between the upper plasma value and the middle plasma value falls within a preset reference range, it can be determined that the upper plasma value coincides with the middle plasma value, and when the difference between the lower plasma value and the middle plasma value falls within the reference range, it can be determined that the lower plasma value coincides with the middle plasma value. The reference range may vary depending on the process conditions. The reference range may be derived by a preliminary test or the like and set in advance by a user. For example, the reference range may be set such that the upper plasma value and the lower plasma value are within 3% of each other with respect to the middle plasma value. In this case, in the comparison step S20, when the difference between the upper plasma value and the intermediate plasma value is within 3%, it is determined that the upper plasma value and the intermediate plasma value are identical, and when the difference between the lower plasma value and the intermediate plasma value is within 3%, it is determined that the lower plasma value and the intermediate plasma value are identical. The reference range may be stored in the storage module 94 (shown in fig. 2).

As described above, in the comparison step S20, by determining whether or not the upper plasma value and the lower plasma value respectively match the intermediate plasma value by using the reference range, the sputtering apparatus control method according to the present invention can prevent frequent occurrence of a failure due to the movement of the magnet portion 4 by the moving portion 6 even when there is a slight difference between the upper plasma value and the lower plasma value respectively compared with the intermediate plasma value. Therefore, the sputtering apparatus control method according to the present invention can reduce the repair cost due to a failure or the like, and can also reduce the frequency of stopping the operation for repair, thereby improving the operation rate. In addition, the method for controlling a sputtering apparatus according to the present invention can prevent the stability of plasma from being lowered by the moving part 6 frequently moving the magnet part 4 even when there is a slight difference between the upper plasma value and the lower plasma value compared to the intermediate plasma value. Therefore, the control method of the sputtering device can improve the stability of plasma, thereby improving the stability of the sputtering process.

In this case, the plasma acquiring step S10 may acquire the middle plasma value, the upper plasma value, and the lower plasma value by averaging the middle region CA, the upper region UA, and the lower region DA.

At this time, in the plasma acquisition step S10, after the intensities of the plasma are measured for a plurality of different positions of the middle area CA, an average value is derived to acquire the middle plasma value. In this process, the plasma intensity is measured at a plurality of different positions of the intermediate area CA by the plurality of intermediate measuring means 511, and the intermediate acquiring means 512 derives an average value from the intensity values of the plurality of plasmas measured by the plurality of intermediate measuring means 511 to acquire the intermediate plasma value.

At this time, in the plasma acquiring step S10, after the intensities of the plasma are measured at a plurality of different positions of the upper area UA, an average value is derived to acquire the intermediate plasma value. In this process, the intensity of the plasma is measured at a plurality of different positions of the upper area UA by the plurality of upper measuring units 521, and the upper acquiring unit 522 derives an average value from the intensity values of the plurality of plasmas measured by the plurality of upper measuring units 521 to acquire the upper plasma value.

At this time, in the plasma acquiring step S10, after the intensity of plasma is measured for a plurality of different positions of the lower area DA, an average value is derived to acquire the lower plasma value. In this process, the intensity of the plasma is measured at a plurality of different positions of the lower area DA by the plurality of lower measuring means 531, and the lower acquiring means 532 derives an average value from the intensity values of the plurality of plasmas measured by the plurality of lower measuring means 531 to acquire the lower plasma value.

The sputtering apparatus control method according to the present invention can perform the plasma acquisition step S10, the comparison step S20, and the adjustment step S30 in real time. In this case, in the plasma acquiring step S10, the middle plasma value, the upper plasma value, and the lower plasma value may be acquired in real time, respectively. In the comparing step S20, it is possible to determine whether the upper plasma value and the lower plasma value are respectively consistent with the intermediate plasma value in real time by using the intermediate plasma value, the upper plasma value, and the lower plasma value acquired in real time. In the adjusting step S30, at least one of the upper distance UD and the lower distance DD may be adjusted in real time using the intermediate plasma value, the upper plasma value, and the lower plasma value acquired in real time.

As described above, the sputtering apparatus control method according to the present invention adjusts the upper distance UD and the lower distance DD in real time so that the lower plasma value, the upper plasma value, and the intermediate plasma value are adjusted to be equal to each other, in response to real-time fluctuations in the upper plasma value, the intermediate plasma value, and the lower plasma value caused by erosion occurring in each of the upper target portion 3b, the intermediate target portion 3a, and the lower target portion 3c as the sputtering process proceeds. Therefore, the method for controlling the sputtering apparatus according to the present invention can improve the uniformity of the thickness and quality of the thin film deposited on the substrate 100, and further increase the total amount of the target 3 used.

The sputtering apparatus control method according to the present invention is capable of implementing the plasma acquisition step S10, the comparison step S20, and the adjustment step S30 at predetermined unit time intervals. The unit time may vary according to the process conditions. The unit time may be derived by a preliminary test or the like and set in advance by the user. The unit time may be stored in the storage module 94.

When the plasma acquiring step S10, the comparing step S20, and the adjusting step S30 are performed at preset unit time intervals, in the plasma value acquiring step S10, the middle plasma value, the upper plasma value, and the lower plasma value may be acquired at the unit time intervals, respectively. In the comparing step S20, it is possible to determine whether or not the upper plasma value and the lower plasma value respectively coincide with the intermediate plasma value at the unit time interval, using the intermediate plasma value, the upper plasma value, and the lower plasma value acquired at the unit time interval. In the adjusting step S30, at least one of the upper distance and the lower distance may be adjusted at the unit time interval using the middle plasma value, the upper plasma value, and the lower plasma value acquired at the unit time interval.

Therefore, the control method of the sputtering apparatus according to the present invention can prevent frequent occurrence of a failure or the like due to frequent movement of the magnet portion 4 by the moving portion 6, thereby reducing repair costs due to the failure or the like, and also reducing the frequency of stopping operation for repair, thereby improving the operation rate. In addition, the method for controlling the sputtering apparatus according to the present invention can prevent the moving unit 6 from frequently moving the magnet unit 4 to lower the stability of the plasma, thereby improving the stability of the sputtering process.

The sputtering apparatus control method according to the present invention may further include executing step S40.

The re-execution step S40 is re-executed from the plasma value acquisition step S10 after the adjustment step S30 is performed. The re-performing step S40 can be repeatedly performed until the upper plasma value and the lower plasma value are respectively consistent with the middle plasma value. Therefore, the sputtering apparatus control method according to the present invention can improve the accuracy of the operation of adjusting the upper plasma value, the lower plasma value, and the intermediate plasma value to be the same. On the other hand, after the plasma acquisition step S10 and the comparison step S20 are carried out according to the re-execution step S40, the plasma value acquisition step S10 or the adjustment step S30 can be carried out according to the judgment result in the comparison step S20.

Referring to fig. 1 to 9, the sputtering apparatus control method according to the present invention may include a switching step S50, a first moving step S60, and a second moving step S70.

In the conversion step S50, it is determined whether the intermediate plasma value is greater than the conversion value. The converting step S50 may be implemented by the converting module 93. The conversion step S50 may be performed after the plasma acquisition step S10 is performed and before the comparison step S20 is performed. When it is determined in the conversion step S50 that the intermediate plasma value is equal to or less than the conversion value, the comparison step S20 may be performed.

In the first moving step S60, the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 are moved together. When it is determined in the conversion step S50 that the intermediate plasma value is greater than the conversion value, the first movement step S60 may be implemented by moving the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 together. The first moving step S60 may be realized by the upper moving mechanism 62, the lower moving mechanism 63, and the intermediate moving mechanism 61 moving the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 together. At this time, the upper moving mechanism 62, the lower moving mechanism 63, and the intermediate moving mechanism 61 may move the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 together under the control of the control module 92. The first moving step S60 may be realized by moving the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 together by the integral moving mechanism 64. In this case, the integral moving mechanism 64 may move the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 together under the control of the control module 92.

For example, as shown in fig. 8, the first moving step S60 may be implemented by moving the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 together in the first direction (FD arrow direction). Although not shown, the first moving step S60 may be implemented by moving the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 together in the second direction (SD arrow direction). The upper magnet 42, the lower magnet 43, and the intermediate magnet 41 may move at the same distance.

In the first moving step S60, the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 may be moved together such that the intermediate plasma value reaches the first reference value. In this case, the first moving step S60 moves the intermediate magnet 41 until the intermediate plasma value reaches the first reference value, while moving only the intermediate plasma value in parallel, and moves the upper magnet 42 and the lower magnet 43 together when moving the intermediate magnet 41.

The second moving step S70 is to stop the upper magnet 42 and the lower magnet 43 and to further move only the intermediate magnet 41 after the first moving step S60. In the first moving step S60, when the upper magnet 42, the lower magnet 43, and the intermediate magnet 41 reach a position where the intermediate plasma value becomes the first reference value while moving together, the second moving step S70 is implemented by stopping the upper magnet 42 and the lower magnet 43 and further moving only the intermediate magnet 41. In the second moving step S70, the upper magnet 42 and the lower magnet 43 are stopped by the upper moving mechanism 62 and the lower moving mechanism 63, and the intermediate moving mechanism 61 further moves only the intermediate magnet 41. At this time, the upper moving mechanism 62, the lower moving mechanism 63, and the intermediate moving mechanism 61 can move only the intermediate magnet 41 further while stopping the upper magnet 42 and the lower magnet 43, respectively, under the control of the control module 92.

For example, as shown in fig. 9, the second moving step S70 may be implemented by stopping the upper magnet 42 and the lower magnet 43 and further moving only the intermediate magnet 41 in the first direction (FD arrow direction). Although not shown, the second moving step S70 may be implemented by stopping the upper magnet 42 and the lower magnet 43 and further moving only the intermediate magnet 41 in the second direction (direction of the SD arrow). The intermediate magnet 41 may be further moved in the same direction as the moving direction in the first moving step S60.

In the second moving step S70, only the intermediate magnet 41 may be further moved so that the intermediate plasma value reaches the second reference value. At this time, the second moving step S70 moves the intermediate magnet 41 further until the intermediate plasma value reaches the second reference value while the step of acquiring only the intermediate plasma value is performed in parallel.

As described above, in the sputtering apparatus control method according to the present invention, when the erosion of the target 3 occurs due to the progress of the sputtering process and the difference in erosion rates occurring in the target intermediate portion 3a, the target upper portion 3b, and the target lower portion 3c cannot be compensated for by adjusting only the upper distance UD and the lower distance DD, the difference in erosion rates occurring in the target intermediate portion 3a, the target upper portion 3b, and the target lower portion 3c can be compensated for by the switching step S50, the first moving step S60, and the second moving step S70. Therefore, even when the sputtering process is performed to the end of the life cycle of the target 3, the method for controlling the sputtering apparatus according to the present invention can improve the uniformity of the thickness and the quality of the thin film deposited on the substrate 100 and further increase the total amount of the target 3 to be used by changing the control method of the sputtering apparatus 1 in the switching step S50, the first moving step S60, and the second moving step S70.

It will be apparent to those skilled in the art that the present invention described above is not limited to the above-described embodiments and drawings, and various substitutions, modifications and changes may be made without departing from the technical spirit of the present invention.

Claims

1. A sputtering apparatus control method, comprising:

a plasma value acquisition step of measuring an intensity of plasma in a middle region disposed between a substrate and a target with reference to a horizontal direction to acquire an intermediate plasma value, measuring an intensity of plasma in an upper region disposed on an upper side of the middle region with reference to a vertical direction to acquire an upper plasma value, and measuring an intensity of plasma in a lower region disposed on a lower side of the middle region with reference to the vertical direction to acquire a lower plasma value;

a conversion step of judging whether the intermediate plasma value is greater than a preset conversion value or not after the plasma value acquisition step is performed; a comparison step of, when it is determined in the conversion step that the intermediate plasma value is equal to or less than the conversion value, determining whether the upper plasma value and the lower plasma value are respectively consistent with the intermediate plasma value;

an adjusting step of adjusting an upper distance of an upper magnet spaced from the target with reference to the horizontal direction for adjusting an intensity of the plasma generated in the upper region when it is determined in the comparing step that the upper plasma value is different from the intermediate plasma value, and adjusting a lower distance of a lower magnet spaced from the target with reference to the horizontal direction for adjusting an intensity of the plasma generated in the lower region when it is determined in the comparing step that the lower plasma value is different from the intermediate plasma value; and

a re-execution step of re-executing from the plasma value acquisition step after the adjustment step is performed,

in the adjusting step, at least one of the upper distance and the lower distance is adjusted while maintaining an intermediate distance of an intermediate magnet for adjusting the intensity of the plasma generated in the intermediate region from the target with reference to the horizontal direction,

repeating the re-performing step until the upper plasma value and the lower plasma value are respectively consistent with the middle plasma value.

2. The sputtering apparatus control method according to claim 1,

in the plasma value acquiring step, the middle plasma value, the upper plasma value, and the lower plasma value are acquired in real time, respectively,

in the comparing step, whether the upper plasma value and the lower plasma value are respectively consistent with the middle plasma value or not is judged by using the middle plasma value, the upper plasma value and the lower plasma value which are obtained in real time,

in the adjusting step, at least one of the upper distance and the lower distance is adjusted in real time using the middle plasma value, the upper plasma value, and the lower plasma value acquired in real time.

3. The sputtering apparatus control method according to claim 1,

in the plasma value acquiring step, the middle plasma value, the upper plasma value, and the lower plasma value are acquired at preset unit time intervals, respectively,

in the comparing step, it is judged whether the upper plasma value and the lower plasma value respectively coincide with the middle plasma value at the unit time interval using the middle plasma value, the upper plasma value, and the lower plasma value acquired at the unit time interval,

in the adjusting step, at least one of the upper distance and the lower distance is adjusted at the unit time interval using the middle plasma value, the upper plasma value, and the lower plasma value acquired at the unit time interval.

4. The sputtering apparatus control method according to claim 1,

in the comparing step, it is determined that the upper plasma value is identical to the middle plasma value when a difference between the upper plasma value and the middle plasma value falls within a preset reference range, and it is determined that the lower plasma value is identical to the middle plasma value when a difference between the lower plasma value and the middle plasma value falls within the reference range,

in the plasma value acquiring step, when it is determined in the comparing step that the upper plasma value and the lower plasma value respectively coincide with the middle plasma value, the upper plasma value, and the lower plasma value are respectively acquired again.

5. The sputtering apparatus control method according to claim 1, comprising:

a conversion step of judging whether the intermediate plasma value is greater than a preset conversion value after the plasma value acquisition step is executed;

a first moving step of moving the upper magnet and the lower magnet together with an intermediate magnet for adjusting the intensity of the plasma generated in the intermediate region when it is determined in the conversion step that the intermediate plasma value is greater than the conversion value; and

and a second moving step of stopping the upper magnet and the lower magnet and further moving only the intermediate magnet after the first moving step is performed.

6. The sputtering apparatus control method according to claim 5,

in the first moving step, the upper magnet, the lower magnet, and the intermediate magnet are moved together so that the intermediate plasma value reaches a preset first reference value,

in the second moving step, only the intermediate magnet is further moved so that the intermediate plasma value reaches a preset second reference value different from the first reference value.

7. The sputtering apparatus control method according to claim 1,

in the plasma value obtaining step, an average value is derived to obtain the middle plasma value after measuring the intensity of the plasma for a plurality of different positions of the middle region, an average value is derived to obtain the upper plasma value after measuring the intensity of the plasma for a plurality of different positions of the upper region, and an average value is derived to obtain the lower plasma value after measuring the intensity of the plasma for a plurality of different positions of the lower region.

8. A sputtering apparatus, comprising:

a support part for supporting the substrate;

a target spaced apart from the support section with respect to a horizontal direction;

an intermediate magnet for adjusting the intensity of plasma generated in an intermediate region disposed between the target and the substrate supported by the support portion with respect to the horizontal direction;

an upper magnet for adjusting the intensity of the plasma generated in an upper region disposed above the middle region with respect to the vertical direction;

a lower magnet for adjusting the intensity of plasma generated in a lower region disposed below the intermediate region with respect to the vertical direction;

the middle acquisition module is used for measuring the intensity of the plasma in the middle area so as to acquire a middle plasma value;

an upper acquisition module that measures an intensity of the plasma of the upper region to acquire an upper plasma value;

a lower acquisition module that measures an intensity of the plasma of the lower region to acquire a lower plasma value;

an intermediate moving mechanism for moving the intermediate magnet in the horizontal direction;

an upper moving mechanism for moving the upper magnet independently in the horizontal direction with respect to the intermediate magnet;

a lower moving mechanism for moving the lower magnet in the horizontal direction independently of the middle magnet and the upper magnet, respectively; and

a control unit that controls the intermediate movement mechanism, the upper movement mechanism, and the lower movement mechanism based on the intermediate plasma value, the upper plasma value, and the lower plasma value, respectively,

the control section includes:

the conversion module is used for judging whether the intermediate plasma value is larger than a preset conversion value or not;

a control module which controls the middle moving mechanism, the upper moving mechanism, and the lower moving mechanism, respectively, so as to adjust at least one of an upper distance of the upper magnet from the target with reference to the horizontal direction and a lower distance of the lower magnet from the target with reference to the horizontal direction, while maintaining a middle distance of the middle magnet from the target with reference to the horizontal direction; and

a comparison module for judging whether the upper plasma value and the lower plasma value are respectively consistent with the middle plasma value,

when it is determined that the middle plasma value is equal to or less than the conversion value, the control module controls the upper moving mechanism to make the upper plasma value coincide with the middle plasma value, and controls the lower moving mechanism to make the lower plasma value coincide with the middle plasma value.

9. The sputtering apparatus according to claim 8,

the upper moving mechanism moves the upper magnet in the horizontal direction to make the upper plasma value coincide with the intermediate plasma value,

the lower moving mechanism moves the lower magnet in the horizontal direction so that the lower plasma value coincides with the intermediate plasma value.

10. The sputtering apparatus according to claim 8,

the middle acquiring module, the upper acquiring module, and the lower acquiring module acquire the middle plasma value, the upper plasma value, and the lower plasma value, respectively, in real time or at preset unit time intervals,

the upper moving mechanism moves the upper magnet in real time when the upper plasma value is acquired in real time, and moves the upper magnet at the unit time interval when the upper plasma value is acquired at the unit time interval,

the lower moving mechanism moves the lower magnet in real time when the lower plasma value is acquired in real time, and moves the lower magnet at the unit time interval when the lower plasma value is acquired at the unit time interval.

11. The sputtering apparatus according to claim 8,

the upper moving mechanism stops the upper magnet when a difference between the upper plasma value and the middle plasma value falls within a preset reference range,

the lower moving mechanism stops the lower magnet when a difference between the lower plasma value and the intermediate plasma value falls within the reference range.

12. The sputtering apparatus according to claim 8,

when the intermediate plasma value is greater than the conversion value, the intermediate moving mechanism moves the intermediate magnet so that the intermediate plasma value reaches a preset first reference value,

when the intermediate plasma value is greater than the conversion value, the upper moving mechanism moves the upper magnet in the same manner as a moving direction and a moving distance when the intermediate moving mechanism moves the intermediate magnet,

when the intermediate plasma value is greater than the conversion value, the lower moving mechanism moves the lower magnet in the same manner as the moving direction and the moving distance when the intermediate moving mechanism moves the intermediate magnet.

13. The sputtering apparatus according to claim 12,

the intermediate moving mechanism further moves the intermediate magnet to make the intermediate plasma value reach a preset second reference value different from the first reference value when the intermediate magnet, the upper magnet, and the lower magnet move to make the intermediate plasma value reach the first reference value,

the upper moving mechanism stops the upper magnet when the middle magnet, the upper magnet, and the lower magnet move such that the middle plasma value reaches the first reference value,

the lower moving mechanism stops the lower magnet when the middle magnet, the upper magnet, and the lower magnet move such that the middle plasma value reaches the first reference value.

14. The sputtering apparatus according to claim 8, comprising:

a shielding part for shielding the plasma; and

a driving part moving the shielding part between a shielding position to shield plasma and an isolation position spaced from the shielding position,

wherein when the shield portion is disposed at the shield position, a plasma is shielded so as to protect the middle acquisition module, the upper acquisition module, and the lower acquisition module from plasmas generated at the middle region, the upper region, and the lower region, respectively,

the driving part moves the shielding part between the shielding position and the isolation position according to whether the substrate supported by the supporting part exists or not.

15. The sputtering apparatus according to claim 8,

when it is determined that the intermediate plasma value is greater than the conversion value, the control unit controls the upper moving mechanism, the lower moving mechanism, and the intermediate moving mechanism to move the upper magnet, the lower magnet, and the intermediate magnet together, and then controls the intermediate moving mechanism to further move only the intermediate magnet.

16. The sputtering apparatus according to claim 8,

the intermediate acquisition module comprises: a plurality of intermediate measurement mechanisms that measure the intensity of the plasma for a plurality of different positions of the intermediate region; and an intermediate acquisition mechanism that derives an average value from the intensity values of the plurality of plasmas measured by the plurality of intermediate measurement mechanisms to acquire the intermediate plasma value,

the upper acquisition module includes: a plurality of upper measuring mechanisms for measuring the intensity of the plasma at a plurality of different positions of the upper region; and an upper acquisition means for deriving an average value from the intensity values of the plurality of plasmas measured by the plurality of upper measurement means to acquire the upper plasma value,

the lower acquisition module includes: a plurality of lower measurement mechanisms that measure plasma intensity at a plurality of different positions of the lower region; and a lower acquisition unit configured to derive an average value from the intensity values of the plurality of plasmas measured by the plurality of lower measurement units, to acquire the lower plasma value.

17. The sputtering apparatus according to claim 8,

comprises an integral moving mechanism which enables the middle magnet, the upper magnet and the lower magnet to move together,

when the middle plasma value is greater than a conversion value, the integral moving mechanism moves the middle magnet, the upper magnet and the lower magnet together so that the middle plasma value reaches a preset first reference value.