KR102375781B1 - Sputtering Apparatus and Method for Controlling Sputtering Apparatus - Google Patents

Abstract

The present invention provides a support for supporting a substrate; a target spaced apart from the support in a first axial direction; an acquisition unit configured to obtain a plasma value by measuring the intensity of plasma generated between the target and the substrate supported by the support unit in the first axial direction; a magnet unit for controlling the intensity of plasma; and a moving unit for moving the magnet unit along the first axial direction, wherein the moving unit is based on the maximum central plasma value among the central plasma values, the central plasma values, upper plasma values, and lower plasma values It relates to a sputtering apparatus and a sputtering apparatus control method for moving the magnet part along the first axial direction so that at least one of them is adjusted.

Description

Sputtering device and sputtering device control method {Sputtering Apparatus and Method for Controlling Sputtering Apparatus}

The present invention relates to a sputtering apparatus for performing a sputtering process such as a deposition process on a substrate and a sputtering apparatus control method.

In general, in order to manufacture a display device, a solar cell, a semiconductor device, etc., a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on a substrate. To this end, a deposition process for depositing a thin film of a specific material on a substrate, a photo process for selectively exposing the thin film using a photosensitive material, an etching process for selectively removing the thin film from the exposed portion to form a pattern, etc. The treatment process takes place.

As an equipment for performing a processing process on a substrate in this way, there is a sputtering device. The sputtering apparatus mainly performs a deposition process of depositing a thin film on a substrate, and performs the sputtering process using a physical deposition method.

A sputtering apparatus according to the prior art includes a support for supporting a substrate, a target spaced apart from the support, and a magnet for generating plasma. The sputtering apparatus according to the prior art generates a plasma between the substrate supported by the support and the target, and as ionized particles collide with the target by the generated plasma, the thin film material constituting the target is deposited on the substrate. , perform the sputtering process.

Here, the sputtering apparatus according to the prior art performs the sputtering process using the plasma generated between the substrate and the target, but the intensity of the plasma is different for each region. Accordingly, the sputtering apparatus according to the prior art has the following problems.

First, since the sputtering apparatus according to the prior art has a difference in plasma intensity for each region, a difference in erosion rate occurs for each part of the target. Accordingly, the sputtering apparatus according to the prior art has a problem in that it cannot be used up to the remaining usable portion due to the portion where the most erosion occurs in the target. Therefore, in the sputtering apparatus according to the prior art, since the service life of the target decreases as the total amount of the target is reduced, there is a problem in that the process cost increases due to the replacement of the target. In addition, the sputtering apparatus according to the prior art increases the time required to stop the entire process due to the replacement of the target as the replacement cycle of the target is shortened. there is a problem.

Second, since the sputtering apparatus according to the prior art has a difference in plasma intensity for each region, a difference occurs in the deposition rate of the thin film for each part of the substrate. Therefore, the sputtering apparatus according to the prior art has a problem in that the quality of the substrate on which the sputtering process is completed, such as the uniformity of the thin film deposited on the substrate is reduced.

The present invention has been devised to solve the above-described problems, and to provide a sputtering apparatus and a sputtering apparatus control method capable of preventing a decrease in the use efficiency of a target as a result of a difference in plasma intensity for each region it is for

An object of the present invention is to provide a sputtering apparatus and a sputtering apparatus control method capable of preventing deterioration of the quality of a substrate on which a sputtering process is completed due to a difference in plasma intensity for each region.

In order to solve the above problems, the present invention may include the following configuration.

A sputtering apparatus according to the present invention includes a support for supporting a substrate; a target spaced apart from the support in a first axial direction; an acquisition unit configured to obtain a plasma value by measuring the intensity of plasma generated between the target and the substrate supported by the support unit in the first axial direction; a magnet unit for controlling the intensity of plasma; and a moving part for moving the magnet part along the first axial direction. The acquisition unit includes a plurality of central acquisition mechanisms configured to obtain central plasma values by measuring the intensity of plasma for each of the central regions disposed along a second axial direction perpendicular to the first axial direction, the first axial direction and A plurality of upper acquisition mechanisms for obtaining upper plasma values by measuring the intensity of plasma for each of the upper regions disposed above the central regions based on the vertical direction perpendicular to each of the second axial directions; It may include a plurality of lower acquisition mechanisms for obtaining lower plasma values by measuring the intensity of plasma for each of the lower regions disposed below the central regions based on the direction. The moving unit moves the magnet part in the first axial direction so that at least one of the central plasma values, the upper plasma values, and the lower plasma values is adjusted on the basis of the maximum central plasma value among the central plasma values. can be moved along.

A sputtering apparatus control method according to the present invention is a method of controlling a sputtering apparatus that performs a sputtering process using plasma generated between a substrate and a target based on a first axial direction, Central plasma values are obtained by measuring the intensity of plasma for each of the central regions arranged along the two axial directions, and the central region is based on the vertical direction perpendicular to each of the first axial direction and the second axial direction. Upper plasma values are obtained by measuring the intensity of plasma for each of the upper regions disposed on the upper side of the an acquisition step of acquiring lower plasma values; an extraction step of extracting a maximum central plasma value from among the central plasma values, extracting a maximum upper plasma value from among the upper plasma values, and extracting a maximum lower plasma value from among the lower plasma values; and adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value.
A sputtering apparatus according to the present invention includes a support for supporting a substrate; a target spaced apart from the support in a first axial direction; an acquisition unit configured to obtain a plasma value by measuring the intensity of plasma generated between the target and the substrate supported by the support unit in the first axial direction; a magnet unit for controlling the intensity of plasma; a moving part for moving the magnet part along the first axial direction; and a control unit for controlling the moving unit. The acquisition unit includes a plurality of central acquisition mechanisms configured to obtain central plasma values by measuring the intensity of plasma for each of the central regions disposed along a second axial direction perpendicular to the first axial direction, the first axial direction and A plurality of upper acquisition mechanisms for obtaining upper plasma values by measuring the intensity of plasma for each of the upper regions disposed above the central regions based on the vertical direction perpendicular to each of the second axial directions; It may include a plurality of lower acquisition mechanisms for obtaining lower plasma values by measuring the intensity of plasma for each of the lower regions disposed below the central regions based on the direction. The magnet unit may include a plurality of magnet modules disposed along the second axial direction. The control unit includes a conversion module for determining whether the maximum central plasma value of the central plasma values exceeds a preset conversion value; and at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value when the maximum central plasma value is determined by the conversion module to be less than or equal to the conversion value Controls the magnet modules based on the maximum central plasma value through the moving unit so that It may include a control module for changing the method.
A sputtering apparatus control method according to the present invention is a method of controlling a sputtering apparatus that performs a sputtering process using plasma generated between a substrate and a target based on a first axial direction, Central plasma values are obtained by measuring the intensity of plasma for each of the central regions arranged along the two axial directions, and the central region is based on the vertical direction perpendicular to each of the first axial direction and the second axial direction. Upper plasma values are obtained by measuring the intensity of plasma for each of the upper regions disposed on the upper side of the an acquisition step of acquiring lower plasma values; an extraction step of extracting a maximum central plasma value from among the central plasma values, extracting a maximum upper plasma value from among the upper plasma values, and extracting a maximum lower plasma value from among the lower plasma values; a conversion step of determining whether the maximum central plasma value exceeds a preset conversion value; and adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value. When it is determined in the conversion step that the maximum central plasma value is less than or equal to the conversion value, the adjusting step is performed by controlling a plurality of magnet modules arranged along the second axis direction based on the maximum central plasma value, and the In the conversion step, when it is determined that the maximum central plasma value exceeds the conversion value, the control method for the magnet modules may be changed.

According to the present invention, the following effects can be achieved.

The present invention is implemented so that the intensity of plasma can be adjusted by measuring the intensity of plasma for each region during the sputtering process, thereby improving the ability to respond to changing process conditions, environmental conditions, etc. due to various factors during the sputtering process. By doing so, the efficiency of the sputtering process can be improved.

The present invention is implemented so that the intensity of plasma can be adjusted by measuring the intensity of plasma for each region during the sputtering process, thereby reducing the difference in the degree of partial erosion in the target, so that the total amount of the target is reduced. Not only can it be increased, but it can also extend the service life of the target.

The present invention is implemented to adjust at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value, thereby reducing the deviation between the erosion partially occurring in the target, It is possible to further improve the effect of increasing the total usage of the target and extending the service life of the target.

1 is a schematic side cross-sectional view of a sputtering apparatus according to the present invention;
Figure 2 is a schematic side cross-sectional view of the target and the magnet portion in the sputtering apparatus according to the present invention
Figure 3 is a conceptual perspective view showing the arrangement of the central acquisition mechanism, the upper acquisition mechanism, and the lower acquisition mechanism in the sputtering apparatus according to the present invention
4 is a conceptual perspective view showing the arrangement of magnet modules in the sputtering apparatus according to the present invention;
5 is a schematic rear view showing a state in which the integrated movement mechanism is coupled to the magnet modules in the sputtering apparatus according to the present invention;
6 is a schematic block diagram of an acquisition unit, a moving unit, a control unit, and a swing unit in the sputtering apparatus according to the present invention;
7 is a conceptual rear view showing a state in which the magnet modules are swinging with reference to FIG. 5;
8 is a schematic side cross-sectional view of a sputtering apparatus according to a modified embodiment of the present invention;
9 is a schematic side cross-sectional view of a target and a magnet portion in a sputtering apparatus according to a modified embodiment of the present invention;
10 is a conceptual perspective view showing the arrangement of magnet modules in a sputtering apparatus according to a modified embodiment of the present invention;
11 is a schematic rear view showing a state in which the moving part is coupled to the central magnets, the upper magnets, and the lower magnets in the sputtering apparatus according to a modified embodiment of the present invention;
12 is a schematic block diagram of an acquisition unit, a moving unit, a control unit, and a swing unit in a sputtering apparatus according to a modified embodiment of the present invention;
13 to 19 are schematic flowcharts for a sputtering apparatus control method according to the present invention

Hereinafter, an embodiment of a sputtering apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

Referring to FIG. 1 , a sputtering apparatus 1 according to the present invention performs a sputtering process on a substrate 100 for manufacturing a display device, a solar cell, a semiconductor device, and the like. The sputtering apparatus 1 according to the present invention includes a support part 2 , a target 3 , an acquisition part 4 , a magnet part 5 , and a moving part 6 .

Referring to FIG. 1 , the support part 2 supports the substrate 100 . The support part 2 may support the substrate 100 so that the substrate 100 stands parallel to the vertical direction (Z-axis direction). The support part 2 may support the upper end of the substrate 100 and the lower end of the substrate 100 in the vertical direction (Z-axis direction), respectively. The support part 2 may be disposed between the acquisition part 4 and the target 3 based on a first axial direction (X-axis direction). Accordingly, the substrate 100 supported by the support part 2 may be disposed between the acquisition part 4 and the target 3 based on the first axial direction (X-axis direction). The first axial direction (X-axis direction) and the vertical direction (Z-axis direction) may be axial directions disposed perpendicular to each other. The support part 2 may be disposed inside a chamber (not shown). The support 2 may be coupled to the chamber. The target 3 and the acquisition unit 4 may be disposed inside the chamber. The support part 2 may support the substrate 100 by supporting a carrier (not shown) on which the substrate 100 is supported. In this case, the substrate 100 may move between the inside of the chamber and the outside of the chamber while being supported on the carrier. Hereinafter, a substrate referred to as a substrate 100 supported on the support part 2 is described not only when the substrate 100 is supported on the support part 2 without the carrier, but also when the substrate 100 is supported on the support part through the carrier. It should be construed as including the case supported in (2).

Referring to FIG. 1 , the target 3 is disposed to be spaced apart from the support part 2 in the first axial direction (X-axis direction). When the sputtering process corresponds to a deposition process of depositing a thin film on the substrate 100 , the target 3 may be made of a thin film material. The target 3 may include a target surface 31 . The target surface 31 is a surface facing the substrate 100 supported on the support 2 . The substrate 100 may include an opposite surface 110 disposed to face the target surface 31 . As the thin film material is released from the target 3 while the sputtering process is in progress, erosion occurs on the target surface 31 . Accordingly, as the sputtering process proceeds, the opposite surface 110 of the substrate 100 and the target surface 31 of the target 3 are spaced apart from each other with respect to the first axial direction (X-axis direction). The distance may be gradually increased.

Referring to FIG. 1 , the target 3 may be disposed between the substrate 100 supported by the support part 2 and the magnet part 5 with respect to the first axial direction (X-axis direction). there is. The target 3 may be disposed to stand parallel to the vertical direction (Z-axis direction). The target 3 may be disposed inside the chamber. The target 3 may be coupled to the cooling mechanism 200 . The cooling mechanism 200 may be disposed between the target 3 and the magnet unit 5 with respect to the first axial direction (X-axis direction). The cooling mechanism 200 may cool the target 3 using a cooling fluid or the like. The cooling mechanism 200 may be coupled to the chamber. In this case, the target 3 may be coupled to the cooling mechanism 200 by being coupled to the chamber through the cooling mechanism 200 . Based on the vertical direction (Z-axis direction), the target 3 may be implemented to have a longer length than that of the magnet unit 5 . Based on the vertical direction (Z-axis direction), the magnet unit 5 may be implemented to have a longer length than that of the substrate 100 .

1 and 2 , the acquisition unit 4 is disposed between the substrate 100 supported by the support unit 2 and the target 3 with respect to the first axial direction (X-axis direction). The plasma value is obtained by measuring the intensity of the generated plasma. In this case, the plasma may be generated in the plasma region PA spaced apart from each of the substrate 100 supported by the support 2 and the target 3 with respect to the first axial direction (X-axis direction). there is. The plasma value may be a measured plasma intensity value. The acquisition unit 4 may acquire the plasma value by measuring the intensity of the plasma using a spectroscopy (spectroscope) or a spectrometer. The acquisition unit 4 may acquire the plasma value by measuring the intensity of the plasma light that has passed through the substrate 100 . When the sputtering process corresponds to a deposition process of depositing a thin film on the substrate 100 , the acquisition unit 4 determines the intensity of the thin film deposited on the substrate 100 and the plasma light passing through the substrate 100 . By measuring, the plasma value can be obtained. The acquisition unit 4 may be disposed at a position spaced apart from the support unit 2 with respect to the first axial direction (X-axis direction). The acquisition unit 4 may be disposed inside the chamber.

The obtaining unit 4 may include a central obtaining mechanism 41 , an upper obtaining mechanism 42 , and a lower obtaining mechanism 43 .

The central acquisition mechanism 41 measures the intensity of plasma with respect to the central region CA to acquire a central plasma value. The central area CA is a space disposed at the center of the plasma area PA with respect to the vertical direction (Z-axis direction). Based on the vertical direction (Z-axis direction), the central area CA may be disposed at a height spaced apart from each other by the same distance from the upper end of the plasma area PA and the lower end of the plasma area PA. . Based on the vertical direction (Z-axis direction), the central area CA may be implemented to have a shorter length than each of the substrate 100 and the target 3 supported by the support part 2 .

The upper acquisition mechanism 42 measures the intensity of plasma with respect to the upper area UA to obtain an upper plasma value. The upper area UA is a space disposed above the central area CA with respect to the vertical direction (Z-axis direction). Based on the vertical direction (Z-axis direction), the upper area UA may be implemented to have a shorter length than each of the substrate 100 and the target 3 supported by the support part 2 .

The lower acquisition mechanism 43 measures the intensity of plasma with respect to the lower area DA to obtain a lower plasma value. The lower area DA is a space disposed below the central area CA with respect to the vertical direction (Z-axis direction). Based on the vertical direction (Z-axis direction), the lower area DA may be implemented to have a shorter length than each of the substrate 100 and the target 3 supported by the support part 2 .

1 to 3 , the acquiring unit 4 may include a plurality of each of the central acquiring mechanism 41 , the upper acquiring mechanism 42 , and the lower acquiring mechanism 43 .

The central acquisition mechanisms 41 may be disposed to be spaced apart from each other in a second axial direction (Y-axis direction) perpendicular to the first axial direction (X-axis direction). The second axial direction (Y-axis direction) and the first axial direction (X-axis direction) may be axial directions perpendicular to each other on the same plane. Accordingly, the central acquisition mechanisms 41 may obtain central plasma values by measuring the intensity of plasma for each of the plurality of central regions CA disposed along the second axial direction (Y-axis direction). .

For example, as shown in FIG. 3 , the acquiring unit 4 includes a first central acquiring mechanism 41a, a second central acquiring mechanism 41b, and 3 It may include a central acquisition mechanism (41c). Based on the second axial direction (Y-axis direction), the second central obtaining mechanism 41b may be disposed between the first central obtaining mechanism 41a and the third central obtaining mechanism 41c. there is. The first central acquisition mechanism 41a may acquire a first central plasma value by measuring the intensity of plasma with respect to the first central region CA1. The second central acquisition mechanism 41b may acquire a second central plasma value by measuring the intensity of plasma with respect to the second central region CA2. The third central acquisition mechanism 41c may acquire a third central plasma value by measuring the intensity of plasma with respect to the third central region CA3. Based on the second axial direction (Y-axis direction), the second central area CA2 may be disposed between the first central area CA1 and the third central area CA3 .

In FIG. 3, the acquisition unit 4 is illustrated as acquiring central plasma values for three central regions CA1, CA2, CA3, but the present invention is not limited thereto and the acquisition unit 4 has two or four It may be implemented to obtain central plasma values for one or more central regions CA. In this case, the number of the central acquisition mechanisms 41 and the number of the central areas CA may be implemented to be the same. The number of the central acquisition mechanisms 41 may be implemented to be larger than the number of the central areas CA. In this case, the acquisition unit 4 may be implemented such that a plurality of central acquisition mechanisms 41 for each of the central areas CA measure the intensity of plasma. In this case, the central acquisition mechanisms 41 for one central area CA may obtain the central plasma value by deriving an average value after measuring the plasma intensity at different positions.

The upper acquisition mechanisms 42 may be disposed to be spaced apart from each other in the second axial direction (Y-axis direction). Accordingly, the upper acquisition mechanisms 42 may obtain upper plasma values by measuring the intensity of plasma for each of the plurality of upper regions UA disposed along the second axis direction (Y-axis direction). .

For example, as shown in FIG. 3 , the acquiring unit 4 includes a first upper acquiring mechanism 42a, a second upper acquiring mechanism 42b, and a second 3 It may include an upper obtaining mechanism (42c). Based on the second axial direction (Y-axis direction), the second upper obtaining mechanism 42b may be disposed between the first upper obtaining mechanism 42a and the third upper obtaining mechanism 42c. there is. The first upper obtaining mechanism 42a may measure the intensity of plasma with respect to the first upper region UA1 to obtain a first upper plasma value. The second upper obtaining mechanism 42b may measure the intensity of plasma with respect to the second upper region UA2 to obtain a second upper plasma value. The third upper obtaining mechanism 42c may measure the intensity of plasma with respect to the third upper region UA3 to obtain a third upper plasma value. Based on the second axial direction (Y-axis direction), the second upper region UA2 may be disposed between the first upper region UA1 and the third upper region UA3 .

3, the acquisition unit 4 is shown as acquiring upper plasma values for three upper regions (UA1, UA2, UA3), but is not limited thereto, and the acquisition unit 4 is 2 or 4 It may be implemented to obtain upper plasma values for more than one upper area (UA). In this case, the number of the upper acquisition mechanisms 42 and the number of the upper areas UA may be implemented to be the same. The number of the upper acquisition mechanisms 42 may be implemented to be larger than the number of the upper areas UA. In this case, the acquisition unit 4 may be implemented such that a plurality of upper acquisition mechanisms 42 for each of the upper regions UA measure the intensity of plasma. In this case, the upper acquisition mechanisms 42 for one upper area UA may obtain the upper plasma value by deriving an average value after measuring the plasma intensity at different positions.

The lower acquisition mechanisms 43 may be disposed to be spaced apart from each other in the second axial direction (Y-axis direction). Accordingly, the lower acquisition mechanisms 43 may obtain lower plasma values by measuring the intensity of plasma for each of the plurality of lower areas DA disposed along the second axis direction (Y axis direction). .

For example, as shown in FIG. 3 , the acquiring unit 4 includes a first lower acquiring mechanism 43a, a second lower acquiring mechanism 43b, and a second 3 It may include a lower acquisition mechanism (43c). Based on the second axial direction (Y-axis direction), the second lower obtaining mechanism 43b may be disposed between the first lower obtaining mechanism 43a and the third lower obtaining mechanism 43c. there is. The first lower acquisition mechanism 43a may obtain a first lower plasma value by measuring the intensity of plasma with respect to the first lower region DA1. The second lower acquisition mechanism 43b may acquire a second lower plasma value by measuring the intensity of plasma with respect to the second lower region DA2. The third lower acquisition mechanism 43c may obtain a third lower plasma value by measuring the intensity of plasma with respect to the third lower region DA3. Based on the second axial direction (Y-axis direction), the second lower area DA2 may be disposed between the first lower area DA1 and the third lower area DA3 .

3, the acquisition unit 4 is illustrated as acquiring lower plasma values for the three sub-regions DA1, DA2, DA3, but the present invention is not limited thereto. It may be implemented to obtain lower plasma values for one or more sub-areas DA. In this case, the number of the lower acquisition mechanisms 42 and the number of the lower areas DA may be implemented to be the same. The number of the lower acquisition mechanisms 42 may be greater than the number of the lower areas UA. In this case, the acquisition unit 4 may be implemented such that a plurality of lower acquisition mechanisms 43 for each of the lower areas DA measure the intensity of plasma. In this case, the lower acquisition mechanisms 43 for one lower area DA may obtain the lower plasma value by deriving an average value after measuring the plasma intensity at different positions.

1 to 3 , the magnet part 5 is disposed between the substrate 100 supported by the support part 2 and the target 3 with respect to the first axial direction (X-axis direction). It is to control the intensity of the generated plasma. The magnet part 5 may be disposed at a position spaced apart from the target 3 with respect to the first axial direction (X-axis direction). The magnet part 5 may be disposed inside the chamber or outside the chamber.

The magnet part 5 may have a separation distance (D, shown in FIG. 1 ) spaced apart from the target 3 based on the first axial direction (X-axis direction). The separation distance D refers to a distance by which the magnet part 5 and the target surface 31 (shown in FIG. 1 ) are spaced apart from each other with respect to the first axial direction (X-axis direction). As the separation distance D is changed, the intensity of plasma may be changed. As the separation distance D becomes shorter, the intensity of plasma may be increased. As the separation distance D increases, the intensity of plasma may be reduced. The separation distance D may be changed by movement of the magnet unit 5 . Even in a state in which the magnet part 5 does not move, the separation distance D may be changed by erosion occurring on the target surface 31 . In this case, erosion may occur partially at different depths on the target surface 31 . Accordingly, the separation distance D may be partially different from each other depending on the degree of erosion occurring on the target surface 31 . Accordingly, the central obtaining mechanism 41, the upper obtaining mechanism 42, and the lower obtaining mechanism 43 may obtain different plasma values. Looking at this in detail, it is as follows.

First, the central plasma value obtained by the central acquisition mechanism 41 is a center distance (CD) between the target 3 and the magnet part 5 with respect to the first axial direction (X-axis direction). , as shown in FIG. 2). The central distance CD corresponds to the separation distance D in the portion corresponding to the central area CA. As shown in FIG. 2 , the central distance CD may be changed as erosion occurs on the central target surface 311 of the target central portion 3a in the target 3 . The target central part 3a is a part of the target 3 and means a part corresponding to the central area CA. Accordingly, the center distance (CD) means the distance the magnet part 5 is spaced apart from the central target surface 311 of the target central part 3a based on the first axial direction (X-axis direction). can do. The substrate 100 may be supported by the support part 2 so that the substrate central part 100a is disposed at a position corresponding to the target central part 3a. In this case, the central facing surface 110a of the substrate central portion 100a and the central target surface 311 of the target central portion 3a may be disposed to face each other. On the other hand, when the acquiring unit 4 includes a plurality of central acquiring mechanisms 41 disposed along the second axial direction (Y-axis direction), the central acquiring mechanisms 41 are arranged in the second axial direction ( It is possible to obtain central plasma values of different sizes for the central regions CA arranged along the Y-axis direction). This is because erosion may occur partially at different depths along the second axial direction (Y-axis direction) in the central target surface 311 .

Next, the upper plasma value obtained by the upper acquisition mechanism 42 is an upper distance UD between the target 3 and the magnet part 5 with respect to the first axis direction (X-axis direction). , as shown in FIG. 2). The upper distance UD corresponds to the separation distance D in the portion corresponding to the upper area UA. As shown in FIG. 2 , the upper distance UD may be changed as erosion occurs in the upper target surface 312 of the target upper part 3b in the target 3 . The target upper part 3b is a part of the target 3 and means a part corresponding to the upper area UA. Accordingly, the upper distance UD refers to a distance at which the magnet part 5 is spaced apart from the upper target surface 312 of the upper target part 3b with respect to the first axial direction (X-axis direction). can do. The substrate 100 may be supported by the support part 2 so that the upper substrate part 100b is disposed at a position corresponding to the target upper part 3b. In this case, the upper facing surface 110b of the upper substrate portion 100b and the upper target surface 312 of the target upper portion 3b may be disposed to face each other. On the other hand, when the acquiring unit 4 includes a plurality of upper acquiring mechanisms 42 arranged along the second axial direction (Y-axis direction), the upper acquiring mechanisms 42 are arranged in the second axial direction ( It is possible to obtain upper plasma values of different sizes for the upper regions UA arranged along the Y-axis direction). This is because erosion may occur partially at different depths along the second axial direction (Y-axis direction) in the upper target surface 312 .

Next, the lower plasma value obtained by the lower acquisition mechanism 43 is a lower distance DD between the target 3 and the magnet part 5 based on the first axis direction (X-axis direction) , as shown in FIG. 2). The lower distance DD corresponds to the separation distance D in the portion corresponding to the lower area DA. As shown in FIG. 2 , the lower distance DD may be changed as erosion occurs in the lower target surface 313 of the lower target 3c in the target 3 . The target lower portion 3c is a portion of the target 3 and refers to a portion corresponding to the lower area DA. Accordingly, the lower distance DD refers to a distance at which the magnet part 5 is spaced apart from the lower target surface 313 of the target lower part 3c with respect to the first axial direction (X-axis direction). can do. The substrate 100 may be supported by the support unit 2 so that the lower substrate 100c is disposed at a position corresponding to the target lower portion 3c. In this case, the lower facing surface 110c of the lower substrate 100c and the lower target surface 313 of the target lower portion 3c may be disposed to face each other. On the other hand, when the acquiring unit 4 includes a plurality of lower acquiring mechanisms 43 arranged along the second axial direction (Y-axis direction), the lower acquiring mechanisms 43 are arranged in the second axial direction ( It is possible to obtain lower plasma values of different sizes for the lower areas DA arranged along the Y-axis direction). This is because erosion may occur at different depths in the lower target surface 313 along the second axial direction (Y-axis direction).

Referring to FIG. 4 , the magnet unit 5 may include a plurality of magnet modules 51 (shown in FIG. 4 ). The magnet modules 51 may be disposed to be spaced apart from each other in the second axial direction (Y-axis direction).

For example, as shown in FIG. 4 , the magnet unit 5 includes a first magnet module 51a , a second magnet module 51b , and a third magnet arranged along the second axial direction (Y-axis direction). A module 51c may be included. Based on the second axial direction (Y-axis direction), the second magnet module 51b may be disposed between the first magnet module 51a and the third magnet module 51c. The first magnet module 51a may control the intensity of plasma generated in the first central area CA1 , the first upper area UA1 , and the first lower area DA1 . The second magnet module 51b may control the intensity of plasma generated in the second central area CA2 , the second upper area UA2 , and the second lower area DA2 . The third magnet module 51c may adjust the intensity of plasma generated in the third central region CA3 , the third upper region UA3 , and the third lower region DA3 . 4, the magnet unit 5 is shown as including three magnet modules (51a, 51b, 51c), but is not limited thereto, and the magnet unit 5 includes two or four or more magnet modules ( 51) may also be implemented.

One target 3 may be disposed between the magnet modules 51 and the substrate 100 supported by the support part 2 based on the first axial direction (X-axis direction). Although not shown, a plurality of targets 3 are disposed between the magnet modules 51 and the substrate 100 supported by the support part 2 based on the first axial direction (X-axis direction). it might be In this case, the targets 3 may be disposed along the second axial direction (Y-axis direction). The number of the magnet modules 51 and the number of the targets 3 may be implemented to be the same. The number of the magnet modules 51 may be implemented more than the number of the targets (3).

1 to 5 , the moving part 6 moves the magnet part 5 . The moving part 6 may adjust the separation distance D (shown in FIG. 1 ) by moving the magnet part 5 in the first axial direction (X-axis direction). Accordingly, the moving part 6 increases the intensity of the plasma generated between the substrate 100 supported by the support part 2 and the target 3 with respect to the first axial direction (X-axis direction). can be adjusted The moving part 6 may be disposed inside the chamber or outside the chamber. The moving part 6 is a cylinder method using a hydraulic cylinder or a pneumatic cylinder, a gear method using a rack gear and a pinion gear, a ball screw using a ball screw and a ball nut The magnet unit 5 may be moved through a ball screw method, a linear motor method using a coil and a permanent magnet, or the like.

The moving unit 6 may move the magnet unit 5 using the plasma values obtained by the obtaining unit 4 . The acquisition unit 4 may provide the acquired plasma values to the mobile unit 6 using wired communication or wireless communication. The moving part 6 is the magnet part 5 so that at least one of the central plasma values, the upper plasma values, and the lower plasma values is adjusted on the basis of the maximum central plasma value among the central plasma values. ) can be moved. The maximum central plasma value means the largest value among the central plasma values obtained by the central acquisition mechanisms 41 . Accordingly, the sputtering apparatus 1 according to the present invention can achieve the following operational effects.

First, the sputtering apparatus 1 according to the present invention by moving the magnet unit 5 using the plasma values obtained by the acquisition unit 4, the central plasma values, the upper plasma values, and the At least one of the lower plasma values may be adjusted. Accordingly, in the sputtering apparatus 1 according to the present invention, even if the process conditions such as erosion of the target 3 and the environmental conditions inside the chamber such as the pressure of the process gas change during the sputtering process, the changed At least one of the central plasma values, the upper plasma values, and the lower plasma values may be adjusted to correspond to process conditions and environmental conditions. Therefore, the sputtering apparatus 1 according to the present invention can improve the efficiency of the sputtering process by improving the ability to respond to changing process conditions, environmental conditions, etc. due to various factors during the sputtering process.

Second, the sputtering apparatus 1 according to the present invention by adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values through the movement of the magnet unit 5, the target ( 3) can reduce the difference in the degree of partial erosion. Accordingly, the sputtering apparatus 1 according to the present invention can extend the service life of the target 3 by increasing the total amount of the target 3 used. Therefore, the sputtering apparatus 1 according to the present invention can reduce the process cost for the sputtering process. In addition, the sputtering apparatus 1 according to the present invention by extending the service life of the target 3, it is possible to increase the replacement cycle of the target (3). Therefore, the sputtering apparatus 1 according to the present invention can reduce the time required to stop the entire process due to replacement of the target 3, so that the productivity of the substrate on which the sputtering process is completed can be increased by increasing the operation rate. .

Third, the sputtering apparatus 1 according to the present invention is implemented to adjust at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value. In general, since more erosion occurs in the upper target surface 312 and the lower target surface 313 than in the central target surface 311, the upper area UA and the lower area DA It is considered that the intensity of plasma becomes stronger than that of the central area CA. Accordingly, the sputtering apparatus 1 according to the present invention can reduce the deviation between the erosion occurring in each of the upper target surface 312, the lower target surface 313, and the central target surface 311, The effect of increasing the total amount of use of the target 3 and the effect of extending the service life of the target 3 can be further improved. In addition, the sputtering apparatus 1 according to the present invention can improve the quality of the substrate 100 on which the sputtering process is completed. For example, when the sputtering process is a deposition process, the sputtering apparatus 1 according to the present invention can improve the uniformity of thickness and film quality with respect to the thin film deposited on the substrate 100 .

The moving unit 6 may include an integral moving mechanism 61 (shown in FIG. 5 ).

The integral movement mechanism 61 moves all of the magnet modules 51 together along the first axial direction (X-axis direction). The integral movement mechanism 61 may change all of the central distance CA, the upper distance UD, and the lower distance DD by moving the entire magnet module 51 . Accordingly, the integral movement mechanism 61 can adjust all of the central plasma values, the upper plasma values, and the lower plasma values. The integral movement mechanism 61 may move all of the magnet modules 51 based on the maximum central plasma value. Accordingly, the integral movement mechanism 61 can adjust all of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value.

The integral movement mechanism 61 may be connected to all of the magnet modules 51 through an integral member 611 . The integral member 611 is coupled to all of the magnet modules 51 . The integral member 611 may be coupled to the integral movement mechanism 61 . Accordingly, the integral movement mechanism 61 moves the integral member 611 in the first axial direction (X-axis direction), thereby moving all of the magnet modules 51 in the first axial direction (X-axis direction). direction) can be moved. In this case, each of the magnet modules 51 may be integrally formed. Although one integral member 611 is shown coupled to the magnet modules 51 in FIG. 5 , the present invention is not limited thereto, and two or more integral members 611 may be coupled to the magnet modules 51 . there is. When a plurality of integral members 611 are coupled to the magnet modules 51 , the integral movement mechanism 61 may be coupled to at least one of the integral members 611 .

1 to 6 , the sputtering apparatus 1 according to the present invention may include a control unit 7 (shown in FIG. 6 ).

The control unit 7 controls the moving unit 6 . The control unit 7 may control the moving unit 6 according to the plasma values obtained by the acquisition unit 4 . The control unit 7 may receive plasma values from the acquisition unit 4 using wired communication, wireless communication, or the like. In this case, the control unit 7 controls the central plasma values, the upper plasma values, and the lower plasma values. The control unit 7 may extract the maximum central plasma value from among the central plasma values. The control unit 7 may control the moving unit 6 using wired communication, wireless communication, or the like. In this case, the control unit 7 controls the moving unit 6 to adjust at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value. can do.

The control unit 7 may include an extraction module 71 , a comparison module 72 , a derivation module 73 , and a control module 74 .

The extraction module 71 is to extract the maximum plasma value. The extraction module 71 may extract the maximum central plasma value from among the central plasma values obtained by the central acquisition mechanisms 41 . In this case, the extraction module 71 may additionally extract the location information of the central region CA corresponding to the maximum central plasma value among the central regions CA. The extraction module 71 may extract a maximum upper plasma value from among the upper plasma values obtained by the upper acquisition mechanisms 42 . The maximum upper plasma value means the largest value among the upper plasma values obtained by the upper acquisition mechanisms 42 . In this case, the extraction module 71 may additionally extract the location information of the upper area UA corresponding to the maximum upper plasma value among the upper areas UA. The extraction module 71 may extract a maximum lower plasma value from among the lower plasma values obtained by the lower acquisition mechanisms 43 . The maximum lower plasma value means the largest value among the lower plasma values obtained by the lower acquisition mechanisms 43 . In this case, the extraction module 71 may additionally extract the location information of the lower area DA corresponding to the maximum lower plasma value from among the lower areas DA.

The extraction module 71 may extract the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value according to any one of real time, a preset unit time interval, and a preset integrated power interval interval. In this case, the acquisition unit 4 may obtain the central plasma values, the upper plasma values, and the lower plasma values in real time and provide them to the extraction module 71 . The unit time interval and the integrated power amount interval are derived through a pre-test, etc., respectively, and may be preset by a user. The unit time interval and the integrated power amount interval may be stored in the storage module 75 of the control unit 7, respectively. The integrated power amount may be obtained through a measuring instrument (not shown) that measures the amount of power.

The comparison module 72 is to determine whether the upper value and the maximum central plasma value match. The upper value means a larger value among the maximum upper plasma value and the maximum lower plasma value. The comparison module 72 may derive the upper value by comparing the maximum upper plasma value and the maximum lower plasma value. In this case, the maximum upper plasma value and the maximum lower plasma value may be provided from the extraction module 71 . When the upper value is derived, the comparison module 72 may determine whether the upper value and the maximum central plasma value match.

The comparison module 72 may determine that the upper value and the maximum central plasma value coincide with each other when the upper value and the maximum central plasma value completely coincide. According to a modified embodiment, if the difference between the upper value and the maximum central plasma value is within a preset reference range, the comparison module 72 may determine that the upper value and the maximum central plasma value match there is. When the difference between the upper value and the maximum central plasma value is out of the reference range, the comparison module 72 may determine that the upper value and the maximum central plasma value do not match. The reference range may be derived through a pre-test or the like and set in advance by the user. The reference range may be stored in the storage module 75 (shown in FIG. 6 ).

The derivation module 73 derives a reference region corresponding to the upper value. If the comparison module 72 determines that the upper value and the maximum central plasma value are different, the derivation module 73 may derive the reference region. As the sputtering process proceeds, the intensity of plasma becomes stronger in each of the upper area UA and the lower area DA than in the central area CA, so that the reference area is located in the area where the plasma intensity is greatest. may be applicable. The derivation module 73 may derive the reference region using the additionally extracted location information while the extraction module 71 extracts the maximum upper plasma value and the maximum lower plasma value. On the other hand, if the comparison module 72 determines that the upper value and the maximum central plasma value match each other, the acquisition unit 4 is configured to obtain the central plasma values, the upper plasma values, and the lower plasma value can be reacquired.

The control module 74 controls the moving unit 6 . When the comparison module 72 determines that the upper value and the maximum central plasma value are different, the control module 74 determines that the intensity of plasma for the reference region derived by the derivation module 73 is the maximum central plasma value. The integral movement mechanism 61 can be controlled to match the value. Accordingly, the sputtering apparatus 1 according to the present invention can reduce the degree of erosion occurring in the portion of the target surface 31 corresponding to the reference area by reducing the intensity of plasma with respect to the reference area. Accordingly, the sputtering apparatus 1 according to the present invention can further increase the amount of use of the portion of the target surface 31 corresponding to the reference region. The control module 74 may control the integrated movement mechanism 61 so that all of the magnet modules 51 move in the first axial direction (X-axis direction). Accordingly, the control module 74 may control all of the central plasma values, the upper plasma values, and the lower plasma values.

A process in which the control unit 7 controls the moving unit 6 so that the intensity of plasma with respect to the reference region coincides with the maximum central plasma value will be exemplarily described as follows.

First, among the central regions CA, the central plasma value for the first central region CA1 is the largest, and among the upper regions UA, the upper plasma value for the second upper region UA2 is the highest. A case in which the lower plasma value for the third lower area DA3 is the largest among the lower areas DA will be described as an example. In addition, a case where the lower plasma value for the third lower region DA3 is greater than the central plasma value for the first central region CA1 and the upper plasma value for the second upper region UA2 is taken as an example Explain.

Next, the extraction module 71 extracts the central plasma value for the first central region CA1 as the maximum central plasma value, and extracts the upper plasma value for the second upper region UA2 as the maximum upper plasma value. value, and a lower plasma value for the third lower region DA3 may be extracted as the maximum lower plasma value.

Next, the comparison module 72 compares the upper plasma value for the second upper region UA2 with the lower plasma value for the third lower region DA3 and compares the lower plasma value for the third lower region DA3. The plasma value may be derived as the upper value. Thereafter, the comparison module 72 may determine that the lower plasma value for the third lower region DA3 and the maximum central plasma value are different from each other.

Next, the derivation module 73 may derive the third lower area DA3 as the reference area.

Next, the control module 74 controls the integrated movement mechanism 61 so that the lower plasma value for the third lower region DA3 matches the central plasma value for the first central region CA1. can Since the lower plasma value for the third lower region DA3 is larger than the central plasma value for the first central region CA1, the integrated movement mechanism 61 is in the control of the control module 74. Accordingly, all of the magnet modules 52 may be moved to increase the lower distance DD. In this case, since all of the magnet modules 52 move, all of the central plasma values, the upper plasma values, and the lower plasma values can be adjusted.

1 to 6 , the control unit 7 may include a conversion module 76 (shown in FIG. 6 ).

The conversion module 76 is to determine whether the maximum central plasma value exceeds a preset conversion value. The conversion value compensates for the difference in erosion rate occurring in the target 3 by adjusting the intensity of plasma based on the maximum central plasma value as erosion occurs in the target 3 as the sputtering process progresses. It may be an impossible plasma value. The conversion value may be derived through a pre-test or the like and may be preset by the user. The conversion value may be stored in the storage module 75 .

The conversion module 76 may provide a result of determining whether the maximum central plasma value exceeds the conversion value to at least one of the comparison module 72 and the control module 74 . When it is determined that the maximum central plasma value exceeds the conversion value, the control module 74 moves so that the movement in the first axial direction (X-axis direction) with respect to the magnet unit 5 is stopped. Part 6 can be controlled. In this case, the control module 74 may control the integral movement mechanism 61 to stop movement of all of the magnet modules 51 in the first axial direction (X-axis direction). Accordingly, the sputtering process may be performed in a state in which movement of all of the magnet modules 51 in the first axial direction (X-axis direction) is stopped. Therefore, in the sputtering apparatus 1 according to the present invention, even when the sputtering process is progressed to the extent belonging to the end of the life cycle of the target 3, by changing the control method for the magnet modules 51, the target ( 3) can further increase the total amount of use. In addition, the sputtering apparatus 1 according to the present invention can improve the thickness and uniformity of the film quality of the thin film deposited on the substrate 100 by changing the control method for the magnet modules 51 . On the other hand, when it is determined that the maximum central plasma value is less than or equal to the conversion value, the comparison module 72 may determine whether the upper value and the maximum central plasma value match after deriving the upper value.

1 to 7 , the sputtering apparatus 1 according to the present invention may include a swing unit 8 (shown in FIG. 6 ).

The swing part 8 is to swing the magnet part 5 relative to the target 3 . For example, the swing part 8 may swing the magnet part 5 by reciprocating the magnet part 5 in the second axial direction (Y-axis direction). For example, the swing unit 8 may swing the magnet unit 5 by reciprocating the magnet unit 5 in the vertical direction (Z-axis direction). For example, the swing part 8 reciprocates the magnet part 5 in the second axial direction (Y-axis direction) and also reciprocates in the vertical direction (Z-axis direction), whereby the magnet part 5 ) can be swinging.

The swing unit 8 may be coupled to the moving unit 6 and swing the moving unit 6 to swing the magnet unit 5 . The swing part 8 may be coupled to the magnet part 5 to swing the magnet part 5 . In this case, the moving part 6 is coupled to the swing part 8 and moves the swing part 8 in the first axial direction (X-axis direction) to move the magnet part 5 to the second axial direction. It can be moved along one axis direction (X axis direction). The swing unit 8 is a cylinder method using a hydraulic cylinder or a pneumatic cylinder, a gear method using a rack gear and a pinion gear, a ball screw using a ball screw and a ball nut It is possible to swing the magnet unit 5 through a ball screw method, a linear motor method using a coil and a permanent magnet, or the like.

The swing unit 8 may swing all of the magnet modules 51 . The swing unit 8 may adjust a swing distance SWD (SWD, shown in FIG. 7 ) at which the magnet modules 51 swing relative to the target 3 . The swing unit 8 may adjust the swing distance SWD by adjusting a distance at which the magnet modules 51 reciprocate in the second axial direction (Y-axis direction). The swing unit 8 may adjust the swing distance SWD by adjusting the distance at which the magnet modules 51 reciprocate in the vertical direction (Z-axis direction). The swing unit 8 is a distance at which the magnet modules 51 reciprocate in the second axial direction (Y-axis direction) and a distance at which the magnet modules 51 reciprocate in the vertical direction (Z-axis direction). By adjusting all of them, the swing distance SWD may be adjusted.

Accordingly, the sputtering apparatus 1 according to the present invention is implemented to adjust the swing distance SWD, thereby increasing the total amount of use of the target 3 . For example, the sputtering apparatus 1 according to the present invention can increase the swing distance SWD to widen the area of the portion where erosion occurs in the target 3, so the area in which the target 3 is used is widened. It is possible to increase the total amount of use for the target 3 .

The swing unit 8 may adjust the waiting time for the magnet modules 51 to wait at both ends of the swing path. When the magnet module 51 is a swing path in which the magnet modules 51 reciprocate in the second axial direction (Y-axis direction), the swing unit 8 means that the magnet modules 51 stop at each of the left and right ends of the swing path. The waiting time can be adjusted by adjusting the time in the state. When the magnet module 51 is a swing path in which the magnet modules 51 reciprocate in the vertical direction (Z-axis direction), the swing part 8 is in a state in which the magnet modules 51 are stopped at the upper and lower ends of the swing path, respectively. The waiting time can be adjusted by adjusting the waiting time. If the magnet module 51 is a swing path in which the magnet modules 51 reciprocate in the second axial direction (Y-axis direction) and reciprocate in the vertical direction (Z-axis direction), the swing unit 8 is the magnet module ( The waiting time by adjusting at least one of a time in which 51) is stopped at each of the left and right ends of the swing path and a time when the magnet module 51 is stopped at each of the upper and lower ends of the swing path can be adjusted.

Accordingly, the sputtering apparatus 1 according to the present invention is implemented to adjust the waiting time, thereby increasing the total amount of use for the target 3 . For example, since the sputtering apparatus 1 according to the present invention can increase the degree of erosion occurring at both ends of the target 3 by increasing the waiting time, the amount of use for both ends of the target 3 can be increased. can The swing unit 8 may adjust both the swing distance SWD and the waiting time.

When the sputtering apparatus 1 according to the present invention includes the swing unit 8, the control unit 7 may include a change module 77 (shown in FIG. 6).

The change module 77 controls the swing unit 8 to change at least one of the swing distance SWD and the waiting time. The change module 77 has the swing distance SWD and the waiting time when all of the magnet modules 51 are moved in the first axial direction (X-axis direction) based on the maximum central plasma value. The swing unit 8 may be controlled to change at least one of them. For example, when all of the magnet module 51 is moved so that the separation distance D spaced apart from the target 3 is reduced, the change module 77 is at least one of the swing distance SWD and the standby time. It is possible to control the swing unit 8 so that . For example, when all of the magnet module 51 is moved to increase the separation distance D separated from the target 3, the change module 77 is at least one of the swing distance SWD and the standby time. It is possible to control the swing unit 8 to increase the. Therefore, the sputtering apparatus 1 according to the present invention is implemented to change at least one of the swing distance SWD and the waiting time using the change module 77, so that various factors are used during the sputtering process. By further improving the ability to respond to changing process conditions and environmental conditions, the efficiency of the sputtering process can be further improved.

The change module 77 may control the swing unit 8 to change at least one of the swing distance SWD and the waiting time according to a preset change condition. The change module 77 may use the values extracted by the extraction module 71 to determine whether the change condition is satisfied, and control the swing unit 8 according to the determination result. Looking at this in detail, it is as follows.

First, the change module 77 is configured to start the change of at least one of the swing distance SWD and the standby time when the maximum central plasma value or the integrated electric power is greater than or equal to a preset change start value. ) can be controlled. The change start value may be derived through a pre-test or the like and set in advance by the user. The change start value may be stored in the storage module 75 . Even if all of the magnet modules 51 are moved in the first axial direction (X-axis direction), the change module 77 is the swing distance SWD if the maximum central plasma value or the integrated electric power is less than the change start value. ) and the waiting time can be controlled to keep the swing unit 8 unchanged. In this case, the change module 77 is configured to swing the magnet modules 51 according to the preset swing distance (SWD) and standby time before the maximum central plasma value or integrated power is equal to or greater than the change start value. The swing unit 8 can be controlled.

Next, after the change of at least one of the swing distance (SWD) and the waiting time is started, the change module 77 determines that all of the magnet modules 51 are the second based on the maximum central plasma value. The swing unit 8 may be controlled to change at least one of the swing distance SWD and the waiting time in association with movement in one axial direction (X-axis direction). The change module 77 interlocks with the movement direction and the movement distance in which all of the magnet modules 51 move along the first axis direction (X-axis direction) to at least among the swing distance SWD and the waiting time. It is possible to control the swing part 8 so that one is changed. In this case, all of the magnet modules 51 change at least one of the swing distance SWD and the waiting time in association with the moving direction and the moving distance in which all of the magnet modules 51 move along the first axial direction (X-axis direction). The degree may be derived through a pre-test or the like and set in advance by the user.

Next, after the change of at least one of the swing distance (SWD) and the waiting time is started, the change module 77 is the swing distance ( SWD) and the waiting time may be controlled to stop changing at least one of the swing units 8 . The change stop value may be derived through a pre-test or the like and set in advance by the user. The change stop value may be stored in the storage module 75 . Even if all of the magnet modules 51 are moved in the first axial direction (X-axis direction), the change module 77 is the swing distance SWD if the maximum central plasma value or integrated power is greater than or equal to the change stop value. ) and the waiting time can be controlled to keep the swing unit 8 unchanged. In this case, the change module 77 allows the magnet modules 51 to swing according to the last changed swing distance (SWD) and standby time just before the maximum central plasma value or integrated electric power becomes equal to or greater than the change stop value. The swing unit 8 can be controlled. On the other hand, when it is determined that the maximum central plasma value exceeds the conversion value, the change module 77 changes at least one of the swing distance SWD and the standby time regardless of the change stop value. The swing part 8 can be controlled to be stopped. In this case, the change module 77 is configured such that the magnet modules 51 swing according to the last changed swing distance SWD and the waiting time just before the maximum central plasma value exceeds the conversion value. 8) can be controlled.

As such, the sputtering apparatus 1 according to the present invention is implemented so that at least one of the swing distance SWD and the waiting time is changed according to the change condition, thereby changing due to various factors during the sputtering process. It is possible to further improve the ability to respond to process conditions and environmental conditions. The change start value and the change stop value may each correspond to the change condition.

When the sputtering apparatus 1 according to the present invention includes the swing unit 8 , the control unit 7 may include a conversion module 78 .

The conversion module 78 controls the swing unit 8 to convert at least one of the swing distance SWD and the waiting time according to a preset conversion condition. The conversion module 78 may use the values extracted by the extraction module 71 to determine whether the conversion condition is satisfied, and control the swing unit 8 according to the determination result. The conversion condition is when the difference in the erosion rate occurring in the target 3 cannot be compensated for by maintaining the swing distance SWD and the waiting time as erosion occurs in the target 3 due to the progress of the sputtering process. can be The conversion condition may be derived through a pre-test or the like and set in advance by the user. The conversion condition may be stored in the storage module 75 . When the conversion module 78 determines that the conversion condition is satisfied, the control module 74 may control the swing unit 8 to convert at least one of the swing distance SWD and the waiting time. there is.

The conversion module 78 is configured to perform at least one of the swing distance SWD and the standby time according to the conversion condition, regardless of movement in the first axial direction (X-axis direction) with respect to the magnet modules 51 . The swing part 8 can be controlled so that one is converted. That is, control of the swing unit 8 by the conversion module 78 and control of the moving unit 6 by the control module 74 may be performed independently of each other.

The conversion module 78 is when the difference between the maximum central plasma value and the maximum upper plasma value exceeds a preset reference value, and when the difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value If it corresponds to any one of the swing distance SWD and the waiting time, at least one of the swing unit 8 may be controlled to be converted. The reference value may be derived through a pre-test or the like and set in advance by a user. The reference value may be stored in the storage module 75 . The reference value may correspond to the conversion condition.

For example, when the difference between the maximum central plasma value and the maximum upper plasma value exceeds the reference value, the conversion module 78 is configured such that at least one of the swing distance SWD and the waiting time is increased by the swing unit ( 8) can be controlled. When the difference between the maximum central plasma value and the maximum upper plasma value is less than or equal to the reference value, the conversion module 78 controls the swing unit 8 so that the swing distance SWD and the waiting time are maintained without being converted. can do.

For example, when the difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value, the conversion module 78 is configured to increase at least one of the swing distance SWD and the standby time. (8) can be controlled. When the difference between the maximum central plasma value and the maximum lower plasma value is less than or equal to the reference value, the conversion module 78 controls the swing unit 8 so that the swing distance SWD and the waiting time are maintained without being converted. can be controlled

Therefore, the sputtering apparatus 1 according to the present invention is implemented to convert at least one of the swing distance (SWD) and the waiting time using the conversion module 78, so that various factors during the sputtering process By further improving the ability to respond to changing process conditions and environmental conditions, the efficiency of the sputtering process can be further improved.

The conversion module 78 may control the swing unit 8 to convert at least one of the swing distance SWD and the standby time by using the maximum central plasma value or the integrated electric power as a conversion condition. Looking at this in detail, it is as follows.

First, the conversion module 78 is configured to start the conversion for at least one of the swing distance (SWD) and the standby time when the maximum central plasma value or the integrated power is greater than or equal to a preset conversion start value. ) can be controlled. The conversion start value may be derived through a pre-test or the like and may be preset by the user. The conversion start value may be stored in the storage module 75 . The conversion module 78 may control the swing unit 8 so that the swing distance SWD and the standby time are maintained without being converted when the maximum central plasma value or the integrated power is less than the conversion start value. In this case, the conversion module 78 is configured to swing the magnet modules 51 according to a preset swing distance (SWD) and a waiting time before the maximum central plasma value or integrated power is equal to or greater than the conversion start value. The swing unit 8 can be controlled.

Next, after the conversion for at least one of the swing distance (SWD) and the waiting time is started, the conversion module 78 is more than a plurality of preset conversion interval values based on the conversion start value. The swing unit 8 may be controlled to convert at least one of the swing distance SWD and the waiting time. The conversion interval value may be a preset interval value based on the conversion start value, and may be derived through a pre-test and preset by a user. The conversion interval value may be stored in the storage module 75 . For example, the conversion module 78 may control the swing unit 8 so that at least one of the swing distance SWD and the waiting time is converted every 20 increments based on the conversion start value. . In this case, the degree to which at least one of the swing distance SWD and the standby time is converted whenever the conversion interval value is greater than or equal to the conversion interval value may be derived through a pre-test and preset by the user.

Next, after the conversion for at least one of the swing distance (SWD) and the waiting time is started, the conversion module 78 is configured to control the swing distance ( SWD) and the waiting time, the swing unit 8 may be controlled so that conversion of at least one is stopped. The conversion stop value may be derived through a pre-test or the like and may be preset by a user. The conversion stop value may be stored in the storage module 75 . When the maximum central plasma value or integrated electric power becomes greater than or equal to the conversion stop value, the conversion module 78 controls the last converted swing distance SWD just before the maximum central plasma value or integrated electric power becomes greater than or equal to the conversion stop value. ) and the waiting time, the swing unit 8 may be controlled so that the magnet modules 51 swing.

On the other hand, when it is determined that the maximum central plasma value exceeds the conversion value, the conversion module 78 converts at least one of the swing distance SWD and the waiting time regardless of the conversion stop value. The swing part 8 can be controlled to be stopped. In this case, the conversion module 78 is configured to swing the magnet modules 51 according to the last converted swing distance SWD and the waiting time just before the maximum central plasma value exceeds the conversion value. (8) can be controlled.

On the other hand, even when it is determined that the maximum central plasma value exceeds the conversion value, the conversion module 78 is the maximum central plasma value until the maximum central plasma value or the integrated electric power is equal to or greater than the conversion stop value. Alternatively, the swing unit 8 may be controlled to convert at least one of the swing distance SWD and the standby time according to the amount of integrated power.

As such, the sputtering apparatus 1 according to the present invention is implemented so that at least one of the swing distance SWD and the waiting time is converted according to the conversion condition, thereby changing due to various factors during the sputtering process. It is possible to further improve the ability to respond to process conditions and environmental conditions. The conversion start value, the conversion interval value, and the conversion stop value may each correspond to the conversion condition.

On the other hand, in the above description, the conversion module 78 controls the swing unit 8 according to the conversion condition, and the change module 77 controls the swing unit 8 according to the change condition. However, the present invention is not limited thereto, and the sputtering apparatus 1 according to the present invention may be implemented such that the conversion module 78 controls the swing unit 8 according to the conversion condition and each of the change conditions. In this case, the control unit 7 may be implemented to include only the conversion module 78 without separately providing the change module 77 to control the swing unit 8 . The sputtering apparatus 1 according to the present invention may be implemented such that the control module 74 controls the swing unit 8 according to each of the conversion conditions and the change conditions. In this case, the control unit 7 may be implemented to include only the control module 74 without separately providing the change module 77 and the conversion module 78 to control the swing unit 8 . there is.

8 to 10, the sputtering apparatus 1 according to a modified embodiment of the present invention includes the support part 2, the target 3, the acquisition part 4, the magnet part 5, and the moving part 6 . The support part 2, the target 3, the acquisition part 4, the magnet part 5, and the moving part 6 are approximately identical to those described in the sputtering apparatus 1 according to the present invention described above. Therefore, the following description will be mainly focused on parts with differences.

8 to 10 , the magnet modules 51 may include a central magnet 511 , an upper magnet 512 , and a lower magnet 513 , respectively.

The central magnet 511 controls the intensity of plasma generated in the central area CA. The central magnet 511 may be disposed at a position spaced apart from the target 3 by the central distance CD with respect to the first axial direction (X-axis direction). The center distance CD may mean a distance at which the central magnet 511 is spaced apart from the central target surface 311 with respect to the first axial direction (X-axis direction). When the center distance CD is changed, the intensity of plasma generated in the central area CA may be changed.

The upper magnet 512 controls the intensity of plasma generated in the upper area UA. The upper magnet 512 may be disposed at a position spaced apart from the target 3 by the upper distance UD with respect to the first axial direction (X-axis direction). The upper distance UD may mean a distance at which the upper magnet 512 is spaced apart from the upper target surface 312 in the first axial direction (X-axis direction). When the upper distance UD is changed, the intensity of plasma generated in the upper area UA may be changed.

The lower magnet 513 controls the intensity of the plasma generated in the lower area DA. The lower magnet 513 may be disposed at a position spaced apart from the target 3 by the lower distance DD with respect to the first axial direction (X-axis direction). The lower distance DD may mean a distance by which the lower magnet 513 is spaced apart from the lower target surface 313 in the first axial direction (X-axis direction). When the lower distance DD is changed, the intensity of plasma generated in the lower area DA may be changed.

10, when the magnet unit 5 includes the first magnet module 51a, the second magnet module 51b, and the third magnet module 51c, the first magnet The module 51a, the second magnet module 51b, and the third magnet module 51c may be implemented as follows.

First, the first magnet module 51a may include a first central magnet 511a, a first upper magnet 512a, and a first lower magnet 513a. The first central magnet 511a may adjust the intensity of plasma generated in the first central region CA1. The first upper magnet 512a may adjust the intensity of plasma generated in the first upper region UA1. The first lower magnet 513a may control the intensity of plasma generated in the first lower region DA1.

Next, the second magnet module 51b may include a second central magnet 511b, a second upper magnet 512b, and a second lower magnet 513b. The second central magnet 511b may adjust the intensity of plasma generated in the second central region CA2. The second upper magnet 512b may adjust the intensity of plasma generated in the second upper region UA2 . The second lower magnet 513b may adjust the intensity of plasma generated in the second lower region DA2.

Next, the third magnet module 51c may include a third central magnet 511c, a third upper magnet 512c, and a third lower magnet 513c. The third central magnet 511c may adjust the intensity of plasma generated in the third central region CA3. The third upper magnet 512c may control the intensity of plasma generated in the third upper region UA3 . The third lower magnet 513c may adjust the intensity of plasma generated in the third lower region DA3.

8 to 11 , the moving unit 6 may include a central moving mechanism 62 , an upper moving mechanism 63 , and a lower moving mechanism 64 .

The central moving mechanism 62 moves all of the central magnets 511 together along the first axial direction (X-axis direction). The central moving mechanism 62 may change all of the central distances CA by moving all of the central magnets 511 . Accordingly, the central moving mechanism 62 can adjust all of the central plasma values. The central moving mechanism 62 may be connected to all of the central magnets 511 through a central connection member 621 (shown in FIG. 11 ). The central connection member 621 is coupled to all of the central magnets 511 . Accordingly, the central moving mechanism 62 may move all of the central magnets 511 by moving the central connecting member 621 . Although one central connection member 621 is shown coupled to the central magnets 511 in FIG. 11 , the present invention is not limited thereto, and two or more central connection members 621 are coupled to the central magnets 511 . it might be When a plurality of central connection members 621 are coupled to the central magnets 511 , the central moving mechanism 62 may be coupled to at least one of the central connection members 621 .

The upper moving mechanism 63 moves all of the upper magnets 512 together in the first axial direction (X-axis direction). The upper moving mechanism 63 may change all of the upper distances UA by moving all of the upper magnets 512 . Accordingly, the upper moving mechanism 63 can adjust all of the upper plasma values. The upper moving mechanism 63 may be connected to all of the upper magnets 512 through an upper connecting member 631 (shown in FIG. 11 ). The upper connection member 631 is coupled to all of the upper magnets 512 . Accordingly, the upper moving mechanism 63 may move all of the upper magnets 512 by moving the upper connecting member 631 . Although one upper connection member 631 is shown coupled to the upper magnets 512 in FIG. 11 , the present invention is not limited thereto, and two or more upper connection members 631 are coupled to the upper magnets 512 . it might be When a plurality of upper connecting members 631 are coupled to the upper magnets 512 , the upper moving mechanism 63 may be coupled to at least one of the upper connecting members 631 .

The lower moving mechanism 64 moves all of the lower magnets 513 together along the first axial direction (X-axis direction). The lower moving mechanism 64 may change all of the lower distances DA by moving all of the lower magnets 513 . Accordingly, the lower moving mechanism 64 can adjust all of the lower plasma values. The lower moving mechanism 64 may be connected to all of the lower magnets 513 through a lower connecting member 641 (shown in FIG. 11 ). The lower connection member 641 is coupled to all of the lower magnets 513 . Accordingly, the lower moving mechanism 64 may move all of the lower magnets 513 by moving the lower connecting member 641 . Although one lower connecting member 641 is shown coupled to the lower magnets 513 in FIG. 11 , the present invention is not limited thereto, and two or more lower connecting members 641 are coupled to the lower magnets 513 . it might be When a plurality of lower connecting members 641 are coupled to the lower magnets 513 , the lower moving mechanism 64 may be coupled to at least one of the lower connecting members 641 .

The moving part 6 may include the integral moving mechanism 61 .

The integral movement mechanism 61 moves all of the central magnets 511 , the upper magnets 512 , and the lower magnets 513 together in the first axial direction (X-axis direction). . That is, the integral movement mechanism 61 may move all of the magnet modules 51 together in the first axial direction (X-axis direction). The integral movement mechanism 61 moves all of the central magnets 511 , the upper magnets 512 , and the lower magnets 513 , so that the central distances CA and the upper distance UD ), and all of the lower distances DD may be varied. Accordingly, the integral movement mechanism 61 can adjust all of the central plasma values, the upper plasma values, and the lower plasma values. The integral movement mechanism 61 may be coupled to the central movement mechanism 62 , the upper movement mechanism 63 , and the lower movement mechanism 64 . In this case, the integral movement mechanism 61 moves the central movement mechanism 62 , the upper movement mechanism 63 , and the lower movement mechanism 64 , so that the central magnets 511 and the upper magnet All of the s 512 and the lower magnet 513 may be moved.

8 to 12 , the sputtering apparatus 1 according to a modified embodiment of the present invention may include the control unit 7 .

The control unit 7 controls the moving unit 6 . Since the control unit 7 is substantially identical to that described in the sputtering apparatus 1 according to the present invention described above, the following description will be mainly focused on parts with differences. The control unit 7 may include the extraction module 71 , the comparison module 72 , the derivation module 73 , and the control module 74 .

The extraction module 71 may extract the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value. Since the extraction module 71 is the same as described in the sputtering apparatus 1 according to the present invention described above, a detailed description thereof will be omitted.

The comparison module 72 may determine whether each of the maximum upper plasma value and the maximum lower plasma value corresponds to the maximum central plasma value. The maximum upper plasma value, the maximum lower plasma value, and the maximum upper plasma value are extracted by the extraction module 71 .

The comparison module 72 may determine that when the maximum upper plasma value and the maximum central plasma value completely coincide, the maximum upper plasma value and the maximum central plasma value match. According to a modified embodiment for this, the comparison module 72 determines that the maximum upper plasma value and the maximum central plasma value match if the difference between the maximum upper plasma value and the maximum central plasma value is within the reference range can judge If the difference between the maximum upper plasma value and the maximum central plasma value is out of the reference range, the comparison module 72 may determine that the maximum upper plasma value and the maximum central plasma value do not match.

The comparison module 72 may determine that when the maximum lower plasma value and the maximum central plasma value completely match, the maximum lower plasma value and the maximum central plasma value match. According to a modified embodiment for this, the comparison module 72 determines that the maximum lower plasma value and the maximum central plasma value match if the difference between the maximum lower plasma value and the maximum central plasma value is within the reference range can judge When the difference between the maximum lower plasma value and the maximum central plasma value is out of the reference range, the comparison module 72 may determine that the maximum lower plasma value and the maximum central plasma value do not match.

The derivation module 73 may derive the upper reference region corresponding to the maximum upper plasma value. When the comparison module 72 determines that the maximum upper plasma value and the maximum central plasma value are different, the derivation module 73 may derive the upper reference region. The upper reference region may correspond to a region having the greatest plasma intensity among the upper regions UA. The derivation module 73 may derive the upper reference region using the location information additionally extracted while the extraction module 71 extracts the maximum upper plasma value.

The derivation module 73 may derive a lower reference region corresponding to the maximum lower plasma value. When the comparison module 72 determines that the maximum lower plasma value and the maximum central plasma value are different, the derivation module 73 may derive the lower reference region. The lower reference area may correspond to an area having the greatest plasma intensity among the lower areas DA. The derivation module 73 may derive the lower reference region using the location information additionally extracted while the extraction module 71 extracts the maximum lower plasma value.

On the other hand, when the comparison module 72 determines that each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value, the acquisition unit 4 determines the central plasma values, the upper plasma values values, and the lower plasma values may be reacquired.

When the control module 74 determines that the maximum upper plasma value and the maximum central plasma value are different, the intensity of plasma for the upper reference region derived by the derivation module 73 matches the maximum central plasma value. It is possible to control the upper moving mechanism 63 so as to Accordingly, the sputtering apparatus 1 according to the present invention can reduce the degree of erosion occurring in the portion of the target surface 31 corresponding to the upper reference region by reducing the intensity of plasma for the upper reference region. there is. Accordingly, the sputtering apparatus 1 according to the present invention can further increase the amount of use of the portion of the target surface 31 corresponding to the upper reference region. The control module 74 may control the upper moving mechanism 63 so that all of the upper magnets 512 move in the first axial direction (X-axis direction). Accordingly, the control module 74 can adjust all of the upper plasma values. The control module 74 determines that the intensity of plasma for the upper reference region is the maximum central plasma value in a state in which movement in the first axial direction (X-axis direction) for all of the central magnets 511 is stopped. It is possible to control the upper moving mechanism 63 to match. In this case, the control module 74 controls the central movement mechanism 62 so that the movement of all of the central magnets 511 in the first axial direction (X-axis direction) is maintained in a stopped state. can

When the control module 74 determines that the maximum lower plasma value and the maximum central plasma value are different, the intensity of plasma for the lower reference region derived by the derivation module 73 matches the maximum central plasma value. It is possible to control the lower moving mechanism 64 so as to Accordingly, the sputtering apparatus 1 according to the present invention can reduce the degree of erosion occurring in the portion of the target surface 31 corresponding to the lower reference region by reducing the intensity of plasma for the lower reference region. there is. Therefore, the sputtering apparatus 1 according to the present invention can further increase the amount of use of the portion of the target surface 31 corresponding to the lower reference region. The control module 74 may control the lower movement mechanism 64 so that all of the lower magnets 513 move in the first axial direction (X-axis direction). Accordingly, the control module 74 can adjust all of the lower plasma values. The control module 74 determines that the intensity of plasma for the lower reference region is the maximum central plasma value in a state in which movement in the first axial direction (X-axis direction) for all of the central magnets 511 is stopped. It is possible to control the lower moving mechanism 64 to match. In this case, the control module 74 controls the central movement mechanism 62 so that the movement of all of the central magnets 511 in the first axial direction (X-axis direction) is maintained in a stopped state. can

The process of controlling the moving unit 6 so that the control unit 7 matches the plasma intensity with respect to the upper reference region and the plasma intensity with respect to the lower reference region to the maximum central plasma value is illustratively Looking at it, it is as follows.

First, among the central regions CA, the central plasma value for the first central region CA1 is the largest, and among the upper regions UA, the upper plasma value for the second upper region UA2 is the highest. A case in which the lower plasma value for the third lower area DA3 is the largest among the lower areas DA will be described as an example.

Next, the extraction module 71 extracts the central plasma value for the first central region CA1 as the maximum central plasma value, and extracts the upper plasma value for the second upper region UA2 as the maximum upper plasma value. value, and a lower plasma value for the third lower region DA3 may be extracted as the maximum lower plasma value.

Next, the comparison module 72 may determine that the upper plasma value for the second upper region UA2 and the maximum central plasma value are different from each other. The comparison module 72 may determine that the lower plasma value for the third lower region DA3 and the maximum central plasma value are different from each other.

Next, the derivation module 73 may derive the second upper area UA2 as the upper reference area. The derivation module 73 may derive the third lower area DA3 as the lower reference area.

Next, the control module 74 controls the upper moving mechanism 63 so that the upper plasma value for the second upper region UA2 matches the central plasma value for the first central region CA1. can In this case, the control module 74 is configured so that all of the upper magnets 512 move in a state in which movement in the first axial direction (X-axis direction) with respect to all of the central magnets 511 is stopped. The central moving mechanism 62 and the upper moving mechanism 63 can be controlled. The control module 74 may control the lower moving mechanism 64 so that the lower plasma value for the third lower region DA3 matches the central plasma value for the first central region CA1. . In this case, the control module 74 is configured to move all of the lower magnets 513 in a state in which the movement of all of the central magnets 511 in the first axial direction (X-axis direction) is stopped. The central moving mechanism 62 and the lower moving mechanism 64 can be controlled.

8 to 12 , the control unit 7 may include the conversion module 76 . The conversion module 76 may determine whether the maximum central plasma value exceeds the conversion value. Since the conversion module 76 is the same as described in the sputtering apparatus 1 according to the present invention, a detailed description thereof will be omitted.

When it is determined by the conversion module 76 that the maximum central plasma value exceeds the conversion value, the control module 74 includes the central magnets 511, the upper magnets 512, and the lower After the magnets 513 move together, the moving unit 6 may be controlled so that only the central magnet 511 may additionally move. In this case, the control module 74 may control the integral movement mechanism 61 so that the central magnets 511 , the upper magnets 512 , and the lower magnets 513 move together. Thereafter, the control module 74 may control the central movement mechanism 62 to further move only the central magnet 511 . After the control module 74 moves the central magnets 511, the upper magnets 512, and the lower magnets 513 together so that the maximum central plasma value becomes a preset first set value, Only the central magnets 511 may be additionally moved so that the maximum central plasma value becomes a second preset value. The first set value and the second set value are respectively applied to the target 3 after the maximum central plasma value exceeds the conversion value as erosion occurs in the target 3 with the progress of the sputtering process. It may be a plasma value capable of compensating for a difference in erosion rate that is partially generated. Each of the first set value and the second set value may be derived through a pre-test or the like and set in advance by a user. The first set value and the second set value may be stored in the storage module 75 , respectively. The first set value and the second set value may be set to different values.

When it is determined by the switching module 76 that the maximum central plasma value exceeds the switching value, the control module 74 controls the first axial direction (X-axis direction) with respect to the magnet unit 5 . It is also possible to control the moving unit 6 so that the movement to the stop. In this case, the control module 74 is configured such that the movement of all of the magnet modules 51 in the first axial direction (X-axis direction) is stopped so that the center moving mechanism 62 and the upper moving mechanism 63 are stopped. ), the lower movement mechanism 64 , and the integral movement mechanism 61 can be controlled. Accordingly, the sputtering process may be performed in a state in which movement of all of the magnet modules 51 in the first axial direction (X-axis direction) is stopped.

As described above, in the sputtering apparatus 1 according to a modified embodiment of the present invention, even if the sputtering process is progressed to the extent belonging to the end of the life cycle of the target 3, the central magnets 511, the By changing the control method for the upper magnets 512 and the lower magnets 513 , it is possible to further increase the total usage of the target 3 . In addition, the sputtering apparatus 1 according to a modified embodiment of the present invention is the substrate through the control method change for the central magnets 511 , the upper magnets 512 , and the lower magnets 513 . It is possible to improve the thickness and uniformity of the film quality for the thin film deposited on (100). On the other hand, when it is determined that the maximum central plasma value is less than or equal to the conversion value, the comparison module 72 determines whether each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value. there is.

8 to 12 , the sputtering apparatus 1 according to a modified embodiment of the present invention may include the swing unit 8 (shown in FIG. 12 ). The swing unit 8 may swing the magnet unit 5 . Since the swing part 8 is the same as described in the sputtering apparatus 1 according to the present invention, a detailed description thereof will be omitted.

When the sputtering apparatus 1 according to a modified embodiment of the present invention includes the swing unit 8, the control unit 7 may include the change module 77 (shown in FIG. 12). When the control module 73 moves all of the upper magnets 512 along the first axial direction (X-axis direction) based on the maximum central plasma value, the changing module 77 controls the swing The swing unit 8 may be controlled to adjust at least one of the distance SWD and the waiting time. In this case, when the control module 73 moves all of the upper magnets 512 along the first axial direction (X-axis direction), the change module 77 includes the central magnets 511, The swing unit 8 may be controlled to adjust at least one of the swing distance SWD and the waiting time for all of the upper magnets 512 and the lower magnets 513 . When the control module 74 moves all of the lower magnets 513 along the first axial direction (X-axis direction) based on the maximum central plasma value, the changing module 77 controls the swing The swing unit 8 may be controlled to adjust at least one of the distance SWD and the waiting time. In this case, when the control module 74 moves all of the lower magnets 513 in the first axial direction (X-axis direction), the change module 77 includes the central magnets 511, The swing unit 8 may be controlled to adjust at least one of the swing distance SWD and the waiting time for all of the upper magnets 512 and the lower magnets 513 .

The change module 77 may control the swing unit 8 to change at least one of the swing distance SWD and the waiting time according to the change condition. Looking at this in detail, it is as follows.

First, the change module 77 is configured to start the change of at least one of the swing distance SWD and the standby time when the maximum central plasma value or the integrated electric power is equal to or greater than the change start value. can control Even if all of the upper magnets 512 are moved along the first axial direction (X-axis direction), the change module 77 is the swing distance ( SWD) and the waiting time may be controlled to keep the swing unit 8 unchanged. Even if all of the lower magnets 513 are moved along the first axial direction (X-axis direction), the change module 77 is the swing distance ( SWD) and the waiting time may be controlled to keep the swing unit 8 unchanged. In this case, the change module 77 is configured to swing the magnet modules 51 according to the preset swing distance (SWD) and standby time before the maximum central plasma value or integrated power is equal to or greater than the change start value. The swing unit 8 can be controlled.

Next, after the change of at least one of the swing distance (SWD) and the waiting time is started, the change module 77 determines that all of the upper magnets 512 based on the maximum central plasma value are the first The swing unit 8 may be controlled to change at least one of the swing distance SWD and the waiting time in association with movement in one axial direction (X-axis direction). The change module 77 interlocks with the movement direction and the movement distance in which all of the upper magnets 512 move along the first axis direction (X-axis direction) to at least among the swing distance SWD and the waiting time. It is possible to control the swing part 8 so that one is changed. In this case, all of the upper magnets 512 change at least one of the swing distance SWD and the waiting time in association with the moving direction and the moving distance in which all of the upper magnets 512 move along the first axial direction (X-axis direction). The degree may be derived through a pre-test or the like and set in advance by the user. On the other hand, after the change of at least one of the swing distance (SWD) and the waiting time is started, the change module 77 determines that all of the lower magnets 513 are the second on the basis of the maximum central plasma value. The swing unit 8 may be controlled so that at least one of the swing distance SWD and the waiting time is changed in association with movement in one axial direction (X-axis direction).

Next, after the change of at least one of the swing distance (SWD) and the waiting time is started, the change module 77 is the swing distance ( SWD) and the waiting time may be controlled to stop changing at least one of the swing units 8 . Even if all of the upper magnets 512 are moved in the first axial direction (X-axis direction), the change module 77 is the swing distance SWD if the maximum central plasma value or integrated power is greater than or equal to the change stop value. ) and the waiting time can be controlled to keep the swing unit 8 unchanged. Even if all of the lower magnets 513 are moved in the first axial direction (X-axis direction), the change module 77 is configured to control the swing distance SWD if the maximum central plasma value or integrated power is greater than or equal to the change stop value. ) and the waiting time can be controlled to keep the swing unit 8 unchanged. In this case, the change module 77 allows the magnet modules 51 to swing according to the last changed swing distance (SWD) and standby time just before the maximum central plasma value or integrated electric power becomes equal to or greater than the change stop value. The swing unit 8 can be controlled. On the other hand, when it is determined that the maximum central plasma value exceeds the conversion value, the change module 77 changes at least one of the swing distance SWD and the standby time regardless of the change stop value. The swing part 8 can be controlled to be stopped. In this case, the change module 77 is configured such that the magnet modules 51 swing according to the last changed swing distance SWD and the waiting time just before the maximum central plasma value exceeds the conversion value. 8) can be controlled.

When the sputtering apparatus 1 according to a modified embodiment of the present invention includes the swing unit 8, the control unit 7 may include the conversion module 78 (shown in FIG. 12). The conversion module 78 may control the swing unit 8 to convert at least one of the swing distance SWD and the waiting time according to the conversion condition. Since the conversion module 78 is the same as described in the sputtering apparatus 1 according to the present invention described above, a detailed description thereof will be omitted.

Hereinafter, an embodiment of a sputtering apparatus control method according to the present invention will be described in detail with reference to the accompanying drawings.

1 to 13, the sputtering apparatus control method according to the present invention is to control a sputtering apparatus that performs a sputtering process on the substrate 100 for manufacturing a display device, a solar cell, a semiconductor device, and the like. The sputtering apparatus 1 according to the present invention described above is controlled by the sputtering apparatus control method according to the present invention, whereby the sputtering process may be performed on the substrate 100 .

The sputtering apparatus control method according to the present invention may include an acquisition step (S10), an extraction step (S20), and an adjustment step (S30).

The obtaining step (S10) may be accomplished by obtaining the central plasma values, the upper plasma values, and the lower plasma values. The central plasma values may be obtained by the central acquisition mechanisms 41 . The upper plasma values may be obtained by the upper acquisition mechanisms 42 . The lower plasma values may be obtained by the lower acquisition mechanisms 43 .

The extraction step (S20) may be made by extracting the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value. The maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value may be extracted by the extraction module 71, respectively.

The adjusting step (S30) may be made by adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value. The adjusting step (S30) may be made by the moving unit 6 moving the magnet unit 5 based on the maximum central plasma value.

Accordingly, the sputtering apparatus control method according to the present invention can achieve the following effects.

First, in the sputtering apparatus control method according to the present invention, the central plasma values, the upper plasma values, and the lower plasma values through the adjusting step S30 using the plasma values obtained through the obtaining step S10. It may be implemented to adjust at least one of the values. Accordingly, in the sputtering apparatus control method according to the present invention, even if the process conditions such as erosion of the target 3 and the environmental conditions inside the chamber such as the pressure of the process gas change during the sputtering process, the changed process At least one of the central plasma values, the upper plasma values, and the lower plasma values may be adjusted to correspond to a condition, an environmental condition, and the like. Therefore, the sputtering apparatus control method according to the present invention can improve the efficiency of the sputtering process by improving the ability to respond to changing process conditions and environmental conditions due to various factors during the sputtering process.

Second, the sputtering apparatus control method according to the present invention by adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values through the adjusting step (S30), to the target (3) It is possible to reduce the difference in the degree of partial erosion. Accordingly, the sputtering apparatus control method according to the present invention by increasing the total amount of the target (3), it is possible to extend the service life of the target (3). Therefore, the sputtering apparatus control method according to the present invention can contribute to reducing the process cost for the sputtering process. In addition, the sputtering apparatus control method according to the present invention by extending the service life of the target (3), it can contribute to increase the replacement cycle of the target (3). Therefore, the sputtering apparatus control method according to the present invention can reduce the time required to stop the entire process due to the replacement of the target 3, thereby increasing the productivity of the substrate on which the sputtering process is completed by increasing the utilization rate. .

Third, in the sputtering apparatus control method according to the present invention, at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value through the adjusting step (S30). implemented to control. In general, since more erosion occurs in the upper target surface 312 and the lower target surface 313 than in the central target surface 311, the upper area UA and the lower area DA It is considered that the intensity of plasma becomes stronger than that of the central area CA. Accordingly, the sputtering apparatus control method according to the present invention can reduce the deviation between the erosion occurring in each of the upper target surface 312, the lower target surface 313, and the central target surface 311, The effect of increasing the total usage of the target 3 and the effect of extending the service life of the target 3 can be further improved. In addition, the sputtering apparatus control method according to the present invention can contribute to improving the quality of the substrate 100 on which the sputtering process is completed. For example, when the sputtering process is a deposition process, the sputtering apparatus control method according to the present invention can contribute to improving the uniformity of thickness and film quality of the thin film deposited on the substrate 100 .

Here, the sputtering apparatus control method according to the present invention may be implemented so that the acquiring step (S10) is performed in real time. The acquiring step (S10) may be accomplished by acquiring each of the central plasma values, the upper plasma values, and the lower plasma values in real time.

When the obtaining step (S10) obtains each of the central plasma values, the upper plasma values, and the lower plasma values in real time, the extraction step (S20) is the maximum central plasma value, the maximum in real time It can be made by extracting the upper plasma value, and the maximum lower plasma value. In this case, the adjusting step (S30) may be made by adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value in real time. Accordingly, in the sputtering apparatus control method according to the present invention, the central plasma values, the upper plasma values, and the lower plasma values are changed in real time due to the occurrence of erosion as the sputtering process progresses. At least one of the central plasma values, the upper plasma values, and the lower plasma values can be adjusted on the basis of the maximum central plasma value. Therefore, the sputtering apparatus control method according to the present invention can further increase the total amount of the target 3 and can further improve the uniformity of thickness and film quality for the thin film deposited on the substrate 100 .

When the acquiring step (S10) acquires each of the central plasma values, the upper plasma values, and the lower plasma values in real time, the extraction step (S20) is performed at the unit time interval or the integrated power amount interval It may be made by extracting the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value. In this case, the adjusting step (S30) is at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value at the unit time interval or the integrated power amount interval. This can be done by adjusting Accordingly, the sputtering device control method according to the present invention is implemented to extract the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value at the unit time interval or the integrated power amount interval, whereby the maximum central plasma As the value is frequently changed, it is possible to prevent the moving part 6 from frequently moving the magnet part 5 so that frequent failures, etc. occur. Therefore, the sputtering apparatus control method according to the present invention can reduce the repair cost due to failure, etc., as well as increase the operation rate by reducing the frequency at which the operation is stopped for repair. In addition, in the sputtering apparatus control method according to the present invention, as the maximum central plasma value frequently fluctuates, the moving unit 6 frequently moves the magnet unit 5 to prevent deterioration of plasma stability, It is possible to improve the stability of the sputtering process.

1 to 7 and 14 , the adjusting step ( S30 ) may include a comparing step ( S31 ), a deriving step ( S32 ), and a moving step ( S33 ).

The comparison step (S31) can be made by comparing the maximum upper plasma value and the maximum lower plasma value to derive the upper value, and determining whether the upper value and the maximum central plasma value match. The upper value may be derived by the comparison module 72 . The determination as to whether the upper value and the maximum central plasma value match may be performed by the comparison module 72 . In the comparison step (S31), when the upper value and the maximum central plasma value completely coincide, it may be determined that the upper value and the maximum central plasma value match. According to a modified embodiment, if the difference between the upper value and the maximum central plasma value is within the reference range in the comparison step (S31), it may be determined that the upper value and the maximum central plasma value match . When it is determined that the upper value and the maximum central plasma value match in the comparison step (S31), the obtaining step (S10) may be performed. In this case, the obtaining step (S10) may be made by re-acquiring the central plasma values, the upper plasma values, and the lower plasma values.

When it is determined that the upper value and the maximum central plasma value are different from the upper value in the comparing step (S31), the deriving step (S32) may be performed by deriving a reference region corresponding to the upper value. The reference region may be derived by the derivation module 73 .

The moving step (S33) may be accomplished by moving all of the magnet modules 51 along the first axial direction (X-axis direction) so that the intensity of plasma with respect to the reference region coincides with the maximum central plasma value. there is. The moving step S33 may be performed by the moving unit 6 . The moving unit 6 moves all of the magnet modules 51 in the first axial direction (X) so that the intensity of plasma for the reference region coincides with the maximum central plasma value under the control of the control unit 7 . axial direction). The moving step ( S33 ) may be accomplished by the integrated moving mechanism 61 moving all of the magnet modules 51 under the control of the control module 74 .

Accordingly, the sputtering apparatus control method according to the present invention can reduce the degree of erosion occurring in the portion of the target surface 31 corresponding to the reference region by reducing the intensity of plasma with respect to the reference region. Therefore, the sputtering apparatus control method according to the present invention can further increase the amount of use of the portion of the target surface 31 corresponding to the reference region. Since all of the magnet modules 51 are moved along the first axial direction (X-axis direction) through the moving step (S33), the central plasma values, the upper plasma values, and the lower plasma values Everything can be adjusted.

The adjusting step (S30) may include a re-performing step (S34).

The re-performing step (S34) may be performed by re-performing from the obtaining step (S10) after performing the moving step (S33). After performing the obtaining step (S10), the extracting step (S20), and the comparing step (S31) according to the re-performing step (S34), the obtaining according to the determination result in the comparing step (S31) Step S10 or the derivation step S32 may be performed.

1 to 7, and 15, the sputtering apparatus control method according to the present invention may include a switching step (S40), and a stopping step (S50).

The conversion step (S40) may be made by determining whether the maximum central plasma value exceeds the conversion value. The conversion step (S40) may be performed after the extraction step (S20) is performed. The conversion step (S40) may be performed before the adjustment step (S30) is performed. The conversion step S40 may be performed by the conversion module 76 . When it is determined that the maximum central plasma value is less than or equal to the conversion value in the conversion step (S40), the adjusting step (S30) may be performed.

In the stopping step (S50), when it is determined that the maximum central plasma value exceeds the conversion value in the conversion step (S40), the first axial direction (X-axis direction) for all of the magnet modules 51 ) by stopping the movement to The stopping step (S50) may be performed by the control module (74). The control module 74 may control the integral movement mechanism 61 to stop movement of all of the magnet modules 51 in the first axial direction (X-axis direction). Accordingly, the sputtering process may be performed in a state in which movement of all of the magnet modules 51 in the first axial direction (X-axis direction) is stopped. Therefore, in the sputtering apparatus control method according to the present invention, even when the sputtering process is progressed to the extent belonging to the end of the life cycle of the target 3, by changing the control method for the magnet modules 51, the target 3 ) can be further increased. In addition, the sputtering apparatus control method according to the present invention can improve the thickness and uniformity of the film quality of the thin film deposited on the substrate 100 by changing the control method for the magnet modules (51).

Hereinafter, an embodiment of a sputtering apparatus control method according to a modified embodiment of the present invention will be described in detail with reference to the accompanying drawings.

8 to 12, and 16, the sputtering apparatus control method according to a modified embodiment of the present invention is to perform a sputtering process on the substrate 100 for manufacturing a display device, a solar cell, a semiconductor device, etc. Controlling the sputtering device. The sputtering apparatus 1 according to the modified embodiment of the present invention described above is controlled by the sputtering apparatus control method according to the modified embodiment of the present invention, thereby performing the sputtering process on the substrate 100. . The sputtering apparatus control method according to a modified embodiment of the present invention may include the acquiring step (S10), the extraction step (S20), and the adjusting step (S30).

The obtaining step (S10) and the extraction step (S20) are substantially identical to those described in the sputtering apparatus control method according to the present invention, and thus a detailed description thereof will be omitted.

The adjusting step (S30) may be made by adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value. The adjusting step (S30) may be made by the moving unit 6 moving the magnet unit 5 based on the maximum central plasma value.

The adjusting step (S30) may include the comparing step (S31), the deriving step (S32), and the moving step (S33).

The comparison step (S31) may be made by determining whether each of the maximum upper plasma value and the maximum lower plasma value corresponds to the maximum central plasma value. The comparison step S31 may be performed by the comparison module 72 . When it is determined that each of the maximum upper plasma value and the maximum lower plasma value corresponds to the maximum central plasma value in the comparison step (S31), the obtaining step (S10) may be performed. In this case, the obtaining step (S10) may be made by re-acquiring the central plasma values, the upper plasma values, and the lower plasma values.

In the comparison step (S31), when the maximum upper plasma value and the maximum central plasma value completely coincide, it can be determined that the maximum upper plasma value and the maximum central plasma value match. According to a modified embodiment, if the difference between the maximum upper plasma value and the maximum central plasma value is within the reference range, the comparison step (S31) matches the maximum upper plasma value and the maximum central plasma value. may judge.

In the comparison step (S31), when the maximum lower plasma value and the maximum central plasma value completely coincide, it may be determined that the maximum lower plasma value and the maximum central plasma value match. According to a modified embodiment, if the difference between the maximum lower plasma value and the maximum central plasma value is within the reference range, the comparison step (S31) matches the maximum lower plasma value and the maximum central plasma value. may judge.

When it is determined that the maximum upper plasma value and the maximum central plasma value are different from the maximum upper plasma value in the comparison step (S31), the deriving step (S32) may be performed by deriving an upper reference region corresponding to the maximum upper plasma value. When it is determined that the maximum lower plasma value and the maximum central plasma value are different from the maximum lower plasma value in the comparison step (S31), the deriving step (S32) may be performed by deriving a lower reference region corresponding to the maximum lower plasma value. The upper reference area and the lower reference area may be derived by the derivation module 73 , respectively.

The moving step (S33) is performed by moving all of the upper magnets 512 along the first axial direction (X-axis direction) so that the intensity of plasma with respect to the upper reference region coincides with the maximum central plasma value. can Accordingly, the sputtering apparatus control method according to the present invention can reduce the degree of erosion occurring in the portion of the target surface 31 corresponding to the upper reference region by reducing the intensity of plasma with respect to the upper reference region. . Therefore, the sputtering apparatus control method according to the present invention can further increase the amount of use of the portion of the target surface 31 corresponding to the upper reference region. All of the upper magnets 512 may be moved by the upper moving mechanism 63 . The upper moving mechanism 63 may move all of the upper magnets 512 in the first axial direction (X-axis direction) under the control of the control module 74 . Meanwhile, in the moving step (S33), all of the upper magnets 512 are moved to the first axis in a state in which movement of all of the central magnets 511 in the first axial direction (X-axis direction) is stopped. It can also be achieved by moving along the direction (X-axis direction).

The moving step (S33) is made by moving all of the lower magnets 513 along the first axial direction (X-axis direction) so that the intensity of the plasma with respect to the lower reference region coincides with the maximum central plasma value. can Accordingly, the sputtering apparatus control method according to the present invention can reduce the degree of erosion occurring in the portion of the target surface 31 corresponding to the lower reference region by reducing the intensity of plasma for the lower reference region. . Therefore, the sputtering apparatus control method according to the present invention can further increase the amount of use of the portion of the target surface 31 corresponding to the lower reference region. All of the lower magnets 513 may be moved by the lower moving mechanism 64 . The lower moving mechanism 64 may move all of the lower magnets 513 in the first axial direction (X-axis direction) under the control of the control module 74 . Meanwhile, in the moving step (S33), all of the lower magnets 513 are moved to the first axis in a state in which the movement of all of the central magnets 511 in the first axial direction (X-axis direction) is stopped. It can also be achieved by moving along the direction (X-axis direction).

The adjusting step (S30) may include the re-performing step (S34).

The re-performing step (S34) may be performed by re-performing from the obtaining step (S10) after performing the moving step (S33). After performing the obtaining step (S10), the extracting step (S20), and the comparing step (S31) according to the re-performing step (S34), the obtaining according to the determination result in the comparing step (S31) Step S10 or the derivation step S32 may be performed.

8 to 12, and 17, the sputtering apparatus control method according to a modified embodiment of the present invention is the switching step (S40), the first moving step (S60), and the second moving step (S70) may include

The conversion step (S40) may be made by determining whether the maximum central plasma value exceeds the conversion value. The conversion step (S40) may be performed after the extraction step (S20) is performed. The conversion step (S40) may be performed before the adjustment step (S30) is performed. The conversion step S40 may be performed by the conversion module 76 . When it is determined that the maximum central plasma value is less than or equal to the conversion value in the conversion step (S40), the adjusting step (S30) may be performed.

In the first moving step (S60), when it is determined that the maximum central plasma value exceeds the conversion value in the conversion step (S40), all of the magnet modules 51 are moved in the first axial direction (X-axis). direction) by moving In the first moving step (S60), the central magnets 511, the upper magnets 512, and the lower magnets 513 are moved to the first axis so that the maximum central plasma value becomes the first set value. It can also be achieved by moving together along the direction (X-axis direction).

In the first moving step (S60), the central moving mechanism 62, the upper moving mechanism 63, and the lower moving mechanism 64 are the central magnets 511, the upper magnets 512, and moving all of the lower magnets 513 in the first axial direction (X-axis direction). The central moving mechanism 62 , the upper moving mechanism 63 , and the lower moving mechanism 64 are the central magnets 511 and the upper magnets 512 under the control of the control module 74 . , and all of the lower magnets 513 may be moved along the first axial direction (X-axis direction). In the first moving step (S60), the integral moving mechanism 61 moves the central moving mechanism 62, the upper moving mechanism 63, and the lower moving mechanism 64 in the first axial direction (X-axis). direction) may be moved. The integral movement mechanism 61 moves the central movement mechanism 62, the upper movement mechanism 63, and the lower movement mechanism 64 in the first axial direction (X) according to the control of the control module 74 . axial direction).

In the second moving step (S70), after the first moving step (S60), the upper magnets 512 and the lower magnets 513 are moved in the first axial direction (X-axis direction). It may be made by stopping and further moving only the central magnets 511 along the first axial direction (X-axis direction). The second moving step (S70) may be made by additionally moving only the central magnets 511 along the first axial direction (X-axis direction) so that the maximum central plasma value becomes the second set value.

In the second moving step (S70), the upper moving mechanism 63 and the lower moving mechanism 64 move in the first axial direction (X-axis) with respect to the upper magnets 512 and the lower magnets 513 . direction), the central moving mechanism 62 may move all of the central magnets 511 along the first axial direction (X-axis direction). The upper moving mechanism 63 and the lower moving mechanism 64 move in the first axial direction (X) with respect to the upper magnets 512 and the lower magnets 513 under the control of the control module 74 . axial direction), and the central moving mechanism 62 moves all of the central magnets 511 along the first axial direction (X-axis direction) under the control of the control module 74 . can do it

The sputtering apparatus control method according to a modified embodiment of the present invention replaces the first moving step (S60) and the second moving step (S70), as shown in FIG. 15, in the conversion step (S40) When it is determined that the maximum central plasma value exceeds the conversion value, the stopping step (S50) may be implemented to be performed. The stopping step (S50) is by stopping the movement in the first axial direction (X-axis direction) with respect to all of the central magnets 511 , the upper magnets 512 , and the lower magnets 513 . can be done

As described above, in the sputtering apparatus control method according to a modified embodiment of the present invention, even if the sputtering process is progressed to the extent belonging to the end of the life cycle of the target 3, the central magnets 511, the upper By changing the control method for the magnets 512 and the lower magnets 513 , it is possible to further increase the total usage of the target 3 . In addition, the sputtering apparatus control method according to a modified embodiment of the present invention is the central magnet 511, the upper magnet 512, and the substrate ( 100) can improve the thickness and uniformity of the film quality for the thin film deposited thereon.

1 to 12 and 18, in the sputtering control method according to the present invention and the sputtering apparatus control method according to a modified embodiment of the present invention, the adjusting step (S30) is a changing step (S35, Fig. 18) may be included.

The changing step (S35) is a swing distance (SWD, shown in FIG. 7) at which the magnet modules 51 relatively swing with respect to the target 3 and the magnet modules 51 at both ends of the swing path. This may be accomplished by changing at least one of the waiting waiting times. The changing step S35 may be performed by the changing module 77 . The changing step S35 may be performed by the control module 74 or the conversion module 78 .

In the changing step (S35), by changing the swing distance (SWD), it is possible to increase the total amount of use of the target (3). For example, the changing step (S35) increases the swing distance (SWD) to widen the area of the portion where erosion occurs in the target 3, so the area in which the target 3 is used is widened and the target ( 3) can increase the total amount of use. The changing step (S35) may increase the total amount of use of the target 3 by changing the waiting time. For example, in the changing step (S35), the amount of erosion occurring at both ends of the target 3 can be increased by increasing the waiting time, so that the amount of use for both ends of the target 3 can be increased. The changing step S35 may be accomplished by changing both the swing distance SWD and the waiting time.

The changing step (S35) and the moving step (S33) may be performed in parallel. Accordingly, the changing step (S35) and the moving step (S33) further improve the ability to respond to changing process conditions and environmental conditions due to various factors during the sputtering process, thereby further increasing the efficiency of the sputtering process. can contribute to improvement. Although not shown, the changing step (S35) may be performed after the moving step (S33) is performed. The changing step (S35) may be performed before the moving step (S33) is performed. After the adjusting step (S30) including the changing step (S35) and the moving step (S33) is performed, it may be performed again from the obtaining step (S10).

The changing step S35 may be performed by changing at least one of the swing distance SWD and the dash period according to the change condition. In this case, as shown in FIG. 18 , the change step (S35) may include a change start step (S351), a change progress step (S352), and a change stop step (S353).

The change starting step (S351) may be made by starting to change at least one of the swing distance SWD and the standby time when the maximum central plasma value or the integrated power is equal to or greater than the change start value. Accordingly, even if the magnet part 5 is moved along the first axial direction (X-axis direction) through the moving step S33, the change starting step S351 is the maximum central plasma value or the amount of integrated power If it is less than the change start value, the swing distance SWD and the waiting time may be maintained without changing. In this case, the magnet modules 51 may swing according to a preset swing distance (SWD) and standby time before the maximum central plasma value or integrated electric power becomes greater than or equal to the change start value.

The change proceeding step S352 may be performed by changing at least one of the swing distance SWD and the waiting time in conjunction with the moving step S33. The change progress step (S352) may be performed after the change start step (S351). Accordingly, if the change in at least one of the swing distance (SWD) and the standby time is not started because the maximum central plasma value or the integrated electric power is less than the change start value in the change start step (S351), the change proceeds Step S352 is not performed. When the change in at least one of the swing distance (SWD) and the standby time is started because the maximum central plasma value or the integrated electric power is equal to or greater than the change start value in the change start step (S351), the change progress step (S352) can be performed.

The change stopping step (S353) may be made by stopping the change of at least one of the swing distance SWD and the standby time when the maximum central plasma value or the integrated power is equal to or greater than the change stop value. Accordingly, even if the magnet part 5 is moved along the first axial direction (X-axis direction) through the moving step S33, the change stopping step S353 is the maximum central plasma value or integrated power If it is greater than or equal to the change stop value, the swing distance SWD and the standby time may be maintained without changing. In this case, the magnet modules 51 may swing according to the last changed swing distance (SWD) and standby time just before the maximum central plasma value or integrated electric power becomes equal to or greater than the change stop value. The change stop step (S353) may be performed after the change progress step (S352).

1 to 12, and 19, the sputtering control method according to the present invention and the sputtering apparatus control method according to a modified embodiment of the present invention, a conversion step (S80, shown in Fig. 19) to include can

The conversion step S80 may be performed by converting at least one of the swing distance SWD and the waiting time. The conversion step S80 may be performed by the conversion module 78 . The conversion step ( S80 ) may be performed by the control module 74 . The conversion step (S80) may be performed after the extraction step (S20) is performed. The conversion step (S80) may be performed before the adjustment step (S30) is performed. Accordingly, after the converting step (S80) is performed, the adjusting step (S30) is performed, and after the adjusting (S30) is performed, it may be performed again from the obtaining step (S10).

The conversion step S80 may be performed by converting at least one of the swing distance SWD and the waiting time according to the conversion condition. In the conversion step (S80), it is determined whether the conversion condition is satisfied using the values extracted through the extraction step (S20), and at least one of the swing distance (SWD) and the waiting time is determined according to the determination result. This can be done by converting Therefore, the sputtering apparatus control method according to the present invention is implemented to convert at least one of the swing distance (SWD) and the waiting time according to the conversion condition, thereby changing process conditions due to various factors during the sputtering process. , by further improving the ability to respond to environmental conditions, etc., it is possible to further improve the efficiency of the sputtering process.

The conversion step (S80) is when the difference between the maximum central plasma value and the maximum upper plasma value exceeds the reference value and when the difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value. If it corresponds to any one, it may be achieved by converting at least one of the swing distance SWD and the waiting time.

For example, when the difference between the maximum central plasma value and the maximum upper plasma value exceeds the reference value, the conversion step (S80) may be made by increasing at least one of the swing distance SWD and the waiting time. When the difference between the maximum central plasma value and the maximum upper plasma value is less than or equal to the reference value, the conversion step (S80) may be performed by maintaining the swing distance SWD and the waiting time without converting.

For example, when the difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value, the conversion step (S80) may be made by increasing at least one of the swing distance SWD and the waiting time. . When the difference between the maximum central plasma value and the maximum lower plasma value is less than or equal to the reference value, the conversion step (S80) may be performed by maintaining the swing distance SWD and the waiting time without converting.

The conversion step (S80) may be accomplished by converting at least one of the swing distance SWD and the standby time using the maximum central plasma value or the integrated power amount as a conversion condition. In this case, as shown in FIG. 19, the conversion step (S80) may include a conversion start step (S81), a conversion progress step (S82), and a conversion stop step (S83).

The conversion start step (S81) may be performed by starting conversion for at least one of the swing distance SWD and the standby time when the maximum central plasma value or the integrated power is equal to or greater than the conversion start value. Accordingly, if the maximum central plasma value or the integrated power is less than the conversion start value, the conversion start step (S81) can be maintained without converting the swing distance (SWD) and the standby time. In this case, the magnet modules 51 may swing according to a preset swing distance (SWD) and standby time before the maximum central plasma value or integrated electric power becomes greater than or equal to the change start value.

The conversion proceeding step (S82) may be performed by converting at least one of the swing distance SWD and the waiting time whenever the conversion interval value is greater than or equal to the conversion interval value based on the conversion start value. For example, the conversion proceeding step (S82) is performed by converting at least one of the swing distance SWD and the standby time whenever the maximum central plasma value or the integrated electric power increases by 20 based on the conversion start value. can The conversion progress step (S82) may be performed after the conversion start step (S81). Accordingly, if the conversion for at least one of the swing distance (SWD) and the standby time is not started because the maximum central plasma value or the integrated power is less than the conversion start value in the conversion start step (S81), the conversion proceeds Step S82 is not performed. In this case, the adjusting step (S30) may be performed in a state in which swings for the magnet modules (51) are not converted through the conversion step (S80). When the conversion of at least one of the swing distance (SWD) and the standby time is started because the maximum central plasma value or the integrated power is equal to or greater than the conversion start value in the conversion starting step (S81), the conversion proceeding step (S82) can be performed.

The conversion stopping step (S83) may be performed by stopping conversion for at least one of the swing distance SWD and the standby time when the maximum central plasma value or the integrated power is equal to or greater than the conversion stop value. When the conversion for at least one of the swing distance (SWD) and the waiting time is stopped, the magnet modules 51 perform the last converted swing just before the maximum central plasma value or the integrated power becomes equal to or greater than the conversion stop value. It can swing depending on the distance (SWD) and waiting time. The conversion stopping step (S83) may be performed after the conversion proceeding step (S82).

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which the present invention pertains that various substitutions, modifications and changes can be made without departing from the technical spirit of the present invention. It will be clear to those who have the knowledge of

1: sputtering device 2: support part
3: Target 4: Acquisition unit
5: magnet part 6: moving part
7: control unit 8: swing unit

Claims (25)

A method of controlling a sputtering apparatus that performs a sputtering process using plasma generated between a substrate and a target in the first axial direction,
Central plasma values are obtained by measuring the intensity of plasma for each of the central regions arranged along a second axial direction perpendicular to the first axial direction, and in each of the first axial direction and the second axial direction The upper plasma values are obtained by measuring the intensity of plasma for each of the upper regions disposed above the central regions based on the vertical vertical direction, and the lower region disposed below the central regions based on the vertical direction. an acquisition step of obtaining lower plasma values by measuring the intensity of the plasma for each of them;
an extraction step of extracting a maximum central plasma value from among the central plasma values, extracting a maximum upper plasma value from among the upper plasma values, and extracting a maximum lower plasma value from among the lower plasma values;
a conversion step of determining whether the maximum central plasma value exceeds a preset conversion value; and
Comprising a control step of adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value,
When it is determined in the conversion step that the maximum central plasma value is equal to or less than the conversion value, the movement of the plurality of magnet modules arranged along the second axis direction in the first axis direction is controlled based on the maximum central plasma value to perform the adjustment step, and when it is determined that the maximum central plasma value exceeds the conversion value in the conversion step, changing the control method for movement of the magnet modules in the first axial direction A sputtering device control method. According to claim 1, wherein the adjusting step
A comparison step of comparing the maximum upper plasma value and the maximum lower plasma value to derive a larger upper value, and determining whether the upper value and the maximum central plasma value match;
a derivation step of deriving a reference region corresponding to the upper value when it is determined that the upper value and the maximum central plasma value are different in the comparison step; and
and a moving step of moving all of the magnet modules along the first axial direction so that the intensity of plasma with respect to the reference region coincides with the maximum central plasma value. 3. The method of claim 2,
In the comparison step, if the difference between the upper value and the maximum central plasma value is within a preset reference range, it is determined that the upper value and the maximum central plasma value match,
The acquiring step is sputtering, characterized in that when it is determined that the upper value and the maximum central plasma value match in the comparison step, the central plasma values, the upper plasma values, and the lower plasma values are re-acquired Device control method. According to claim 1,
The acquiring step acquires each of the central plasma values, the upper plasma values, and the lower plasma values in real time,
The extraction step sputtering device, characterized in that for extracting the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value according to any one of real time, a preset unit time interval, and a preset integrated power interval control method. According to claim 1,
When it is determined that the maximum central plasma value exceeds the switching value in the switching step, a stopping step of stopping movement in the first axial direction with respect to all of the magnet modules. control method. According to claim 1,
a first moving step of moving all of the magnet modules along the first axial direction when it is determined that the maximum central plasma value exceeds the conversion value in the conversion step; and
After the first moving step, the movement of the upper magnets and the lower magnets of the magnet modules in the first axial direction is stopped, and only the central magnets of the magnet modules are added along the first axial direction. A sputtering apparatus control method comprising a second moving step of moving to. According to claim 1, wherein the adjusting step
a comparison step of determining whether each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value;
When it is determined that the maximum upper plasma value and the maximum central plasma value are different from the maximum upper plasma value in the comparison step, an upper reference region corresponding to the maximum upper plasma value is derived, and in the comparison step, the maximum lower plasma value and the maximum central plasma value a derivation step of deriving a lower reference area corresponding to the maximum lower plasma value if it is determined that the different; and
All of the upper magnets of the magnet module are moved along the first axial direction so that the intensity of the plasma with respect to the upper reference region coincides with the maximum central plasma value, and the intensity of plasma with respect to the lower reference region is the A sputtering apparatus control method comprising a moving step of moving all of the lower magnets of the magnet modules in the first axial direction to match the maximum central plasma value. 8. The method of claim 7,
In the moving step, at least one of the upper magnets and the lower magnets is moved along the first axial direction in a state in which movement in the first axial direction with respect to all of the central magnets of the magnet modules is stopped Sputtering device control method, characterized in that. 8. The method of claim 7,
In the comparison step, if the difference between the maximum upper plasma value and the maximum central plasma value is within a preset reference range, it is determined that the maximum upper plasma value and the maximum central plasma value match, and the maximum lower plasma value and the maximum If the difference between the central plasma value is within the reference range, it is determined that the maximum lower plasma value and the maximum central plasma value match,
In the obtaining step, when it is determined that each of the maximum upper plasma value and the maximum lower plasma value in the comparison step matches the maximum central plasma value, the central plasma values, the upper plasma values, and the lower plasma value Sputtering device control method, characterized in that for re-acquiring them. 8. The method of claim 2 or 7,
The adjusting step is a sputtering apparatus control method, characterized in that it comprises a re-performing step of re-performing from the obtaining step after performing the moving step. 8. The method of claim 2 or 7,
The adjusting step includes a changing step of adjusting at least one of a swing distance at which the magnet modules swing relative to the target and a waiting time at which the magnet modules wait at both ends of the swing path,
The changing step and the moving step are sputtering apparatus control method, characterized in that made in parallel. 8. The method of claim 2 or 7,
The adjusting step includes a changing step of changing at least one of a swing distance at which the magnet modules swing relative to the target and a waiting time at which the magnet modules wait at both ends of a swing path,
The change step is a change start step of starting a change of at least one of the swing distance and the standby time when the maximum central plasma value or the integrated electric power is greater than or equal to a preset change start value, and after the change start step, in the moving step A change progress step of changing at least one of the swing distance and the standby time in conjunction with each other, and if the maximum central plasma value or the integrated electric power is greater than or equal to a preset change stop value after the change progress step, among the swing distance and the standby time Sputtering apparatus control method comprising a change stopping step of stopping the change to at least one. According to claim 1,
After the extraction step, at least one of a swing distance at which a plurality of magnet modules arranged along the second axial direction swing relative to the target and a waiting time for the magnet modules to wait at both ends of the swing path. Sputtering apparatus control method comprising a conversion step of converting the. 14. The method of claim 13,
In the conversion step, when the difference between the maximum central plasma value and the maximum upper plasma value exceeds a preset reference value, and when the difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value, any one If applicable, the sputtering device control method, characterized in that for converting at least one of the swing distance and the waiting time. 14. The method of claim 13, wherein the converting step
a conversion start step of starting conversion for at least one of the swing distance and the standby time when the maximum central plasma value or the integrated electric power is greater than or equal to a preset conversion start value;
Conversion proceeding to convert at least one of the swing distance and the standby time whenever the maximum central plasma value or the integrated power is greater than or equal to a plurality of conversion interval values set based on the conversion start value after the conversion start step step; and
After the conversion progress step, if the maximum central plasma value or the integrated power is greater than or equal to a preset conversion stop value, a conversion stopping step of stopping conversion for at least one of the swing distance and the standby time Sputtering device, characterized in that it comprises a control method. a support for supporting the substrate;
a target spaced apart from the support in a first axial direction;
an acquisition unit configured to obtain a plasma value by measuring the intensity of plasma generated between the target and the substrate supported by the support unit in the first axial direction;
a magnet unit for controlling the intensity of plasma;
a moving part for moving the magnet part along the first axial direction; and
A control unit for controlling the moving unit,
The acquisition unit includes a plurality of central acquisition mechanisms configured to obtain central plasma values by measuring the intensity of plasma for each of the central regions disposed along a second axial direction perpendicular to the first axial direction, the first axial direction and A plurality of upper acquisition mechanisms for obtaining upper plasma values by measuring the intensity of plasma for each of the upper regions disposed above the central regions based on the vertical direction perpendicular to each of the second axial directions; A plurality of lower acquisition mechanisms for obtaining lower plasma values by measuring the intensity of plasma for each of the lower regions disposed below the central regions based on the direction,
The magnet unit includes a plurality of magnet modules disposed along the second axial direction,
The control unit is
a conversion module for determining whether a maximum central plasma value among the central plasma values exceeds a preset conversion value; and
When it is determined by the conversion module that the maximum central plasma value is less than or equal to the conversion value, at least one of the central plasma values, the upper plasma values, and the lower plasma values is based on the maximum central plasma value. Control the movement of the magnet modules in the first axial direction to be adjusted based on the maximum central plasma value, and when it is determined by the conversion module that the maximum central plasma value exceeds the conversion value, the magnet module Sputtering apparatus, characterized in that it comprises a control module for changing the control method for the movement in the first axial direction of the. 17. The method of claim 16,
The control unit is
an extraction module for extracting the maximum central plasma value from among the central plasma values, extracting a maximum upper plasma value from among the upper plasma values, and extracting a maximum lower plasma value from among the lower plasma values;
a comparison module for determining whether the upper value and the maximum central plasma value match after deriving a larger upper value by comparing the maximum upper plasma value and the maximum lower plasma value; and
When it is determined that the upper value and the maximum central plasma value are different, including a derivation module for deriving a reference region corresponding to the upper value,
When the maximum central plasma value is determined by the conversion module to be less than or equal to the conversion value, the control module controls the moving unit so that the intensity of plasma for the reference region matches the maximum central plasma value. sputtering device. 17. The method of claim 16,
The magnet modules include central magnets for adjusting the central plasma values, upper magnets for adjusting the upper plasma values, and lower magnets for adjusting the lower plasma values,
The moving unit includes a central moving mechanism for moving all of the central magnets together along the first axial direction, an upper moving mechanism for moving all of the upper magnets together along the first axial direction, and all of the lower magnets. Sputtering apparatus, characterized in that it comprises a lower moving mechanism for moving together along the first axial direction. 19. The method of claim 18,
and the moving unit includes an integral moving mechanism for moving all of the central magnets, the upper magnets, and the lower magnets together along the first axial direction. 19. The method of claim 18,
The control unit is
an extraction module for extracting the maximum central plasma value from among the central plasma values, extracting a maximum upper plasma value from among the upper plasma values, and extracting a maximum lower plasma value from among the lower plasma values;
a comparison module for determining whether each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value; and
When it is determined that the maximum upper plasma value and the maximum central plasma value are different, an upper reference region corresponding to the maximum upper plasma value is derived, and when it is determined that the maximum lower plasma value and the maximum central plasma value are different, the maximum lower Includes a derivation module for deriving a lower reference region corresponding to the plasma value,
When the maximum central plasma value is determined by the switching module to be less than or equal to the switching value, the control module for the upper reference region in a state in which movement in the first axial direction for all of the central magnets is stopped The upper movement mechanism is controlled so that the intensity of plasma coincides with the maximum central plasma value, and the plasma intensity with respect to the lower reference region in a state in which movement of all of the central magnets in the first axial direction is stopped Sputtering apparatus, characterized in that for controlling the lower moving mechanism to match the maximum central plasma value. 17. The method of claim 16,
The control module sputtering device, characterized in that when it is determined that the maximum central plasma value exceeds the conversion value, controlling the moving unit to stop the movement in the first axial direction with respect to the magnet unit. 17. The method of claim 16,
The magnet modules include central magnets for adjusting the central plasma values, upper magnets for adjusting the upper plasma values, and lower magnets for adjusting the lower plasma values,
When the control module determines that the maximum central plasma value exceeds the conversion value, only the central magnets after the central magnets, the upper magnets, and the lower magnets move together along the first axial direction Sputtering apparatus, characterized in that for controlling the moving part to move further along the first axial direction. 17. The method of claim 16,
Comprising a swing part for relatively swinging the magnet part with respect to the target,
Sputtering device, characterized in that the swing unit adjusts at least one of a swing distance at which the magnet modules swing relative to the target and a waiting time at which the magnet modules wait at both ends of the swing path. The method of claim 23, wherein the control unit
an extraction module for extracting the maximum central plasma value from among the central plasma values, extracting a maximum upper plasma value from among the upper plasma values, and extracting a maximum lower plasma value from among the lower plasma values; and
At least one of the swing distance at which the magnet modules swing relative to the target according to a preset change condition using the values extracted by the extraction module and the waiting time for the magnet modules to wait at both ends of the swing path Sputtering apparatus, characterized in that it comprises a change module for controlling the swing unit to change. The method of claim 23, wherein the control unit
an extraction module for extracting the maximum central plasma value from among the central plasma values, extracting a maximum upper plasma value from among the upper plasma values, and extracting a maximum lower plasma value from among the lower plasma values; and
At least one of the swing distance at which the magnet modules swing relative to the target according to a preset conversion condition using the values extracted by the extraction module and the waiting time for the magnet modules to wait at both ends of the swing path Sputtering apparatus comprising a conversion module for controlling the swing unit to convert.

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