KR20200056588A - Sputtering Apparatus and Method for Controlling Sputtering Apparatus - Google Patents

Abstract

The present invention relates to a sputtering apparatus and a method for controlling a sputtering apparatus. The sputtering apparatus includes: a support unit for supporting a substrate; a target disposed in a first axis direction to be spaced from the support unit; an acquiring unit measuring the intensity of plasma generated between the substrate supported by the support unit and the target based on the first axis direction to obtain a plasma value; a magnet unit adjusting the intensity of the plasma; and a moving unit moving the magnet unit in the first axis direction, wherein the moving unit moves the magnet unit in the first axis direction such that at least one among median plasma values, upper plasma values and lower plasma values can be adjusted on the basis of the maximum median plasma value among the median plasma values.

Description

Sputtering Apparatus and Method for Controlling Sputtering Apparatus}

The present invention relates to a sputtering device and a sputtering device control method for performing a sputtering process such as a deposition process on a substrate.

In general, in order to manufacture a display device, a solar cell, and a semiconductor device, a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on a substrate. To this end, for a substrate, such as a deposition process of depositing a thin film of a specific material on a substrate, a photo process of selectively exposing a thin film using a photosensitive material, an etching process of selectively removing a thin film of an exposed part to form a pattern, etc. The processing process takes place.

As such equipment, a sputtering device is used to perform a processing process on the substrate. The sputtering apparatus mainly performs a deposition process of depositing a thin film on a substrate, and performs a sputtering process using a physical vapor deposition method.

The sputtering apparatus according to the prior art includes a support for supporting a substrate, a target disposed spaced apart from the support, and a magnet for generating plasma. The sputtering apparatus according to the prior art generates a plasma between the substrate supported on the support part and the target, and allows the thin film material forming the target to be deposited on the substrate as ionized particles collide with the target by the generated plasma. , Performs the sputtering process.

Here, the sputtering apparatus according to the prior art performs the sputtering process using the plasma generated between the substrate and the target, but the intensity of the plasma is different for each region. Accordingly, the sputtering apparatus according to the prior art has the following problems.

First, the sputtering apparatus according to the prior art has a difference in the intensity of plasma for each region, and thus a difference in erosion rate occurs for each portion of the target. Accordingly, the sputtering apparatus according to the related art has a problem in that it cannot be used to the remaining portion that can be used due to the portion where the most erosion occurred in the target. Therefore, the sputtering apparatus according to the prior art has a problem in that a process cost increases due to the replacement of the target because the life of the target decreases as the total amount of use for the target decreases. In addition, the sputtering apparatus according to the prior art increases the time to stop the entire process due to the replacement of the target as the replacement cycle of the target is shortened, and thus the productivity of the substrate on which the sputtering process is completed decreases due to a decrease in the utilization rate. there is a problem.

Second, since the sputtering apparatus according to the prior art has a difference in plasma intensity for each region, a difference in deposition rate of a thin film occurs for each portion of the substrate. Therefore, the sputtering apparatus according to the prior art has a problem that the quality of the substrate on which the sputtering process is completed is lowered, such as the uniformity of the thin film deposited on the substrate is lowered.

The present invention has been devised to solve the problems as described above, and provides a sputtering device and a method for controlling a sputtering device that can prevent the use efficiency of a target from being lowered as a difference in plasma intensity is generated for each region. It is for.

The present invention is to provide a sputtering device and a sputtering device control method that can prevent the quality of the substrate from which the sputtering process is completed from being deteriorated due to a difference in plasma intensity for each region.

In order to solve the above problems, the present invention may include the following configuration.

The sputtering apparatus according to the present invention includes a support for supporting a substrate; A target spaced apart from the support along the first axial direction; An acquiring unit for acquiring a plasma value by measuring the intensity of the plasma generated between the substrate supported by the support unit and the target based on the first axial direction; A magnet unit for adjusting the intensity of the plasma; And a moving part moving the magnet part along the first axial direction. The acquiring unit measures a plasma intensity for each of the central regions arranged along the second axial direction perpendicular to the first axial direction to obtain central plasma values, and the first axial direction A plurality of upper acquisition mechanisms for acquiring upper plasma values by measuring the intensity of plasma for each of the upper regions disposed above the central regions based on the vertical direction perpendicular to each of the second axial directions, and the upper and lower portions It may include a plurality of lower acquisition mechanism for acquiring lower plasma values by measuring the intensity of the plasma for each of the lower regions disposed below the central regions based on the direction. The moving part moves the magnet part in the first axis direction so that at least one of the central plasma values, the upper plasma values, and the lower plasma values is adjusted based on the maximum central plasma value among the central plasma values. You can move along.

The sputtering apparatus control method according to the present invention is a method of controlling a sputtering apparatus that performs a sputtering process using plasma generated between a substrate and a target based on a first axial direction, and is perpendicular to the first axial direction. The plasma intensity is measured for each of the central regions arranged along the biaxial direction to obtain central plasma values, and the central region is based on the vertical direction perpendicular to each of the first axis direction and the second axis direction. Plasma intensity is measured for each of the upper regions disposed on the upper side of the plasma to obtain upper plasma values, and plasma intensity is measured for each of the lower regions disposed below the central region based on the vertical direction. An acquisition step of acquiring lower plasma values; An extraction step of extracting a maximum central plasma value from the central plasma values, extracting a maximum upper plasma value from the upper plasma values, and extracting a maximum lower plasma value from the lower plasma values; And an adjustment step of adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value.

According to the present invention, the following effects can be achieved.

The present invention is implemented to measure the intensity of the plasma for each area during the sputtering process to adjust the intensity of the plasma, thereby improving the ability to respond to changing process conditions, environmental conditions, etc. due to various factors during the sputtering process By doing so, the efficiency of the sputtering process can be improved.

The present invention is implemented to measure the intensity of the plasma for each region during the sputtering process so as to adjust the intensity of the plasma, thereby reducing the difference in the degree of partial erosion occurring in the target, thereby reducing the total amount of use of the target. Not only can it be increased, but the service life of the target can be extended.

Since the present invention is implemented to adjust at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value, it is possible to reduce the deviation between erosion partially occurring in the target, The overall usage increase effect of the target and the effect of extending the service life of the target can be further improved.

1 is a schematic side sectional view of a sputtering device according to the present invention
Figure 2 is a schematic side cross-sectional view of the target and the magnet in the sputtering apparatus according to the present invention
3 is a conceptual perspective view showing the arrangement of the central acquisition mechanism, the upper acquisition mechanism, and the lower acquisition mechanism in the sputtering apparatus according to the present invention
Figure 4 is a conceptual perspective view showing the arrangement of the magnet modules in the sputtering apparatus according to the present invention
Figure 5 is a schematic rear view showing a state in which the integral moving mechanism is coupled to the magnet modules in the sputtering apparatus according to the present invention
6 is a schematic block diagram of an acquisition unit, a moving unit, a control unit, and a swing unit in the sputtering apparatus according to the present invention
7 is a conceptual rear view showing a state in which the magnet modules are swinging based on FIG. 5;
8 is a schematic side cross-sectional view of a sputtering device according to a modified embodiment of the present invention
9 is a schematic side cross-sectional view of a target and a magnet in a sputtering apparatus according to a modified embodiment of the present invention
10 is a conceptual perspective view showing the arrangement of magnet modules in a sputtering device according to a modified embodiment of the present invention
11 is a schematic rear view showing a state in which the moving part is coupled to the central magnets, the upper magnets, and the lower magnets in the sputtering apparatus according to the modified embodiment of the present invention.
12 is a schematic block diagram of an acquisition unit, a moving unit, a control unit, and a swing unit in a sputtering apparatus according to a modified embodiment of the present invention
13 to 19 are schematic flowcharts of a sputtering device control method according to the present invention.

Hereinafter, embodiments of the sputtering apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

Referring to FIG. 1, the sputtering device 1 according to the present invention is to perform a sputtering process on a substrate 100 for manufacturing a display device, a solar cell, and a semiconductor device. The sputtering device 1 according to the present invention includes a support part 2, a target 3, an acquiring part 4, a magnet part 5, and a moving part 6.

Referring to FIG. 1, the support part 2 supports the substrate 100. The support part 2 may support the substrate 100 so that the substrate 100 stands in parallel to the vertical direction (Z-axis direction). The support part 2 may support each of the upper end of the substrate 100 and the lower end of the substrate 100 based on the vertical direction (Z-axis direction). The support part 2 may be disposed between the acquiring part 4 and the target 3 based on the first axial direction (X-axis direction). Accordingly, the substrate 100 supported by the support part 2 may be disposed between the acquiring part 4 and the target 3 based on the first axial direction (X-axis direction). The first axial direction (X-axis direction) and the vertical direction (Z-axis direction) may be axial directions arranged perpendicular to each other. The support 2 may be disposed inside the chamber (not shown). The support 2 can be coupled to the chamber. The target 3 and the acquiring part 4 may be disposed inside the chamber. The support part 2 may support the substrate 100 by supporting a carrier (not shown) on which the substrate 100 is supported. In this case, the substrate 100 may move between the inside of the chamber and the outside of the chamber while being supported by the carrier. Hereinafter, the description of the substrate 100 supported by the support part 2 means that the substrate 100 is supported through the carrier as well as when the substrate 100 is supported by the support part 2 without the carrier. It should be interpreted as including cases supported in (2).

Referring to FIG. 1, the target 3 is disposed spaced apart from the support 2 based on the first axial direction (X-axis direction). When the sputtering process corresponds to a deposition process of depositing a thin film on the substrate 100, the target 3 may be made of a thin film material. The target 3 may include a target surface 31. The target surface 31 is a surface facing the substrate 100 supported by the support 2. The substrate 100 may include an opposing surface 110 disposed facing the target surface 31. As the sputtering process proceeds, as the thin film material is released from the target 3, erosion occurs on the target surface 31. Accordingly, as the sputtering process proceeds, the opposing surface 110 of the substrate 100 and the target surface 31 of the target 3 are spaced apart from each other based on the first axial direction (X-axis direction). The distance can increase gradually.

Referring to FIG. 1, the target 3 may be disposed between the substrate 100 supported on the support 2 and the magnet 5 based on the first axial direction (X-axis direction). have. The target 3 may be placed vertically parallel to the vertical direction (Z-axis direction). The target 3 may be disposed inside the chamber. The target 3 may be coupled to the cooling mechanism 200. The cooling mechanism 200 may be disposed between the target 3 and the magnet part 5 based on the first axial direction (X-axis direction). The cooling mechanism 200 may cool the target 3 using a cooling fluid or the like. The cooling mechanism 200 may be coupled to the chamber. In this case, the target 3 is coupled to the cooling mechanism 200, and thus may be coupled to the chamber through the cooling mechanism 200. Based on the vertical direction (Z-axis direction), the target 3 may be embodied to have a longer length than the magnet part 5. Based on the vertical direction (Z-axis direction), the magnet part 5 may be implemented to have a longer length than the substrate 100.

1 and 2, the acquiring part 4 is between the substrate 100 supported by the support part 2 and the target 3 based on the first axial direction (X-axis direction). The plasma value is obtained by measuring the intensity of the generated plasma. In this case, plasma may be generated in the plasma region PA spaced from each of the substrate 100 and the target 3 supported by the support 2 based on the first axial direction (X-axis direction). have. The plasma value may be a measured plasma intensity value. The acquiring unit 4 may acquire the plasma value by measuring the intensity of the plasma using a spectroscopic (spectrometer) or spectrometer. The acquiring unit 4 may acquire the plasma value by measuring the intensity of plasma light transmitted through the substrate 100. When the sputtering process corresponds to a deposition process of depositing a thin film on the substrate 100, the acquiring part 4 determines the intensity of the plasma deposited through the substrate 100 and the thin film deposited on the substrate 100. By measuring, the plasma value can be obtained. The acquiring part 4 may be disposed at a position spaced apart from the support part 2 based on the first axial direction (X-axis direction). The acquiring unit 4 may be disposed inside the chamber.

The acquiring unit 4 may include a central acquiring mechanism 41, an upper acquiring mechanism 42, and a lower acquiring mechanism 43.

The central acquiring mechanism 41 acquires a central plasma value by measuring the intensity of the plasma with respect to the central area CA. The central area CA is a space disposed in the center of the plasma area PA based on the vertical direction (Z-axis direction). Based on the vertical direction (Z-axis direction), the central area CA may be disposed at a height spaced apart from each other by the same distance from the upper end of the plasma area PA and the lower end of the plasma area PA. . Based on the vertical direction (Z-axis direction), the central area CA may be implemented with a shorter length than each of the substrate 100 and the target 3 supported by the support 2.

The upper acquiring mechanism 42 is to acquire the upper plasma value by measuring the intensity of plasma over the upper area UA. The upper area UA is a space disposed above the central area CA based on the vertical direction (Z-axis direction). Based on the vertical direction (Z-axis direction), the upper area UA may be implemented with a shorter length than each of the substrate 100 and the target 3 supported by the support 2.

The lower acquisition mechanism 43 is to acquire the lower plasma value by measuring the intensity of the plasma in the lower area DA. The lower area DA is a space disposed below the central area CA based on the vertical direction (Z-axis direction). Based on the vertical direction (Z-axis direction), the lower area DA may be implemented with a shorter length than each of the substrate 100 and the target 3 supported by the support 2.

1 to 3, the acquiring unit 4 may include a plurality of the central acquiring mechanism 41, the upper acquiring mechanism 42, and the lower acquiring mechanism 43, respectively.

The central acquisition mechanisms 41 may be arranged to be spaced apart from each other along a second axis direction (Y axis direction) perpendicular to the first axis direction (X axis direction). The second axial direction (Y-axis direction) and the first axial direction (X-axis direction) may be axial directions perpendicular to each other on the same plane. Accordingly, the central acquiring mechanisms 41 may acquire central plasma values by measuring the intensity of plasma for each of the plurality of central regions CA disposed along the second axis direction (Y-axis direction). .

For example, as illustrated in FIG. 3, the acquiring unit 4 includes a first central acquiring mechanism 41a, a second central acquiring mechanism 41b, and a second central acquiring mechanism 41a arranged along the second axis (Y-axis direction). 3 may include a central acquisition mechanism (41c). Based on the second axis direction (Y-axis direction), the second central acquisition mechanism 41b may be disposed between the first central acquisition mechanism 41a and the third central acquisition mechanism 41c. have. The first central acquiring mechanism 41a may acquire a first central plasma value by measuring the intensity of the plasma with respect to the first central region CA1. The second central acquiring mechanism 41b may acquire a second central plasma value by measuring the intensity of the plasma in the second central region CA2. The third central acquiring mechanism 41c may acquire a third central plasma value by measuring the intensity of the plasma with respect to the third central region CA3. Based on the second axis direction (Y-axis direction), the second central area CA2 may be disposed between the first central area CA1 and the third central area CA3.

In FIG. 3, the acquisition unit 4 is shown to acquire central plasma values for three central areas CA1, CA2, and CA3, but is not limited thereto, and the acquisition unit 4 is 2 or 4 It may be implemented to obtain central plasma values for one or more central areas CA. In this case, the number of the central acquisition mechanisms 41 and the number of the central areas CA may be implemented in the same way. The number of the central acquisition mechanisms 41 may be implemented more than the number of the central areas CA. In this case, the acquiring unit 4 may be implemented such that a plurality of central acquiring mechanisms 41 for each of the central areas CA measure the intensity of plasma. In this case, for one central area CA, the central acquisition mechanisms 41 may obtain the central plasma value by deriving an average value after measuring the intensity of plasma for different positions.

The upper acquisition mechanisms 42 may be arranged to be spaced apart from each other along the second axis direction (Y axis direction). Accordingly, the upper acquisition mechanisms 42 may acquire upper plasma values by measuring the intensity of plasma for each of the plurality of upper regions UA disposed along the second axis direction (Y-axis direction). .

For example, as illustrated in FIG. 3, the acquiring unit 4 includes a first upper acquiring mechanism 42a, a second upper acquiring mechanism 42b, and a second upper acquiring mechanism 42a arranged along the second axis direction (Y-axis direction). It may include a three-phase acquisition unit (42c). Based on the second axial direction (Y-axis direction), the second upper acquisition mechanism 42b may be disposed between the first upper acquisition mechanism 42a and the third upper acquisition mechanism 42c. have. The first upper acquisition mechanism 42a may obtain a first upper plasma value by measuring the intensity of the plasma with respect to the first upper region UA1. The second upper acquisition mechanism 42b may acquire a second upper plasma value by measuring the intensity of the plasma with respect to the second upper region UA2. The third upper acquisition mechanism 42c may obtain a third upper plasma value by measuring the intensity of the plasma with respect to the third upper region UA3. The second upper region UA2 may be disposed between the first upper region UA1 and the third upper region UA3 based on the second axis direction (Y-axis direction).

3, the acquisition unit 4 is shown to acquire upper plasma values for the three upper regions UA1, UA2, and UA3, but is not limited thereto, and the acquisition unit 4 is 2 or 4 It may be implemented to obtain upper plasma values for one or more upper regions UA. In this case, the number of the upper acquisition mechanisms 42 and the number of the upper regions UA may be implemented in the same way. The number of upper acquisition mechanisms 42 may be implemented more than the number of upper regions UA. In this case, the acquiring unit 4 may be implemented such that a plurality of upper acquiring mechanisms 42 for each of the upper regions UA measures the intensity of plasma. In this case, for one upper region UA, the upper acquisition mechanisms 42 may obtain the upper plasma value by deriving an average value after measuring the intensity of plasma for different positions.

The lower acquisition mechanisms 43 may be arranged to be spaced apart from each other along the second axis direction (Y axis direction). Accordingly, the lower acquisition mechanisms 43 may acquire lower plasma values by measuring the intensity of plasma for each of the plurality of lower regions DA arranged along the second axis direction (Y axis direction). .

For example, as shown in FIG. 3, the acquiring unit 4 includes a first lower acquiring mechanism 43a, a second lower acquiring mechanism 43b, and a second lower acquiring mechanism 43a arranged along the second axis direction (Y-axis direction). 3 may include a lower acquisition mechanism (43c). Based on the second axial direction (Y-axis direction), the second lower acquisition mechanism 43b may be disposed between the first lower acquisition mechanism 43a and the third lower acquisition mechanism 43c. have. The first lower acquisition mechanism 43a may acquire a first lower plasma value by measuring the intensity of plasma with respect to the first lower area DA1. The second lower acquisition mechanism 43b may acquire a second lower plasma value by measuring the intensity of plasma in the second lower area DA2. The third lower acquisition mechanism 43c may acquire a third lower plasma value by measuring the intensity of the plasma in the third lower area DA3. The second lower region DA2 may be disposed between the first lower region DA1 and the third lower region DA3 based on the second axis direction (Y-axis direction).

3, the acquisition unit 4 is illustrated as obtaining lower plasma values for the three lower regions DA1, DA2, and DA3, but is not limited thereto, and the acquisition unit 4 has two or four It may be implemented to acquire sub-plasma values for one or more sub-regions DA. In this case, the number of the lower acquisition mechanisms 42 and the number of the lower regions DA may be implemented in the same manner. The number of the lower acquisition mechanisms 42 may be implemented more than the number of the lower regions UA. In this case, the acquiring unit 4 may be implemented such that a plurality of lower acquiring mechanisms 43 for each of the lower areas DA measures the intensity of plasma. In this case, for the lower area DA, the lower acquisition mechanisms 43 may obtain the lower plasma value by deriving an average value after measuring the intensity of the plasma at different positions.

1 to 3, the magnet part 5 is between the substrate 100 and the target 3 supported by the support part 2 based on the first axial direction (X-axis direction). It is to control the intensity of the generated plasma. The magnet part 5 may be disposed at a position spaced apart from the target 3 based on the first axial direction (X-axis direction). The magnet part 5 may be disposed inside the chamber or outside the chamber.

The separation distance D (shown in FIG. 1) spaced apart from the target 3 may be varied in the magnet part 5 based on the first axial direction (X-axis direction). The separation distance D refers to a distance in which the magnet part 5 and the target surface 31 (shown in FIG. 1) are separated from each other based on the first axial direction (X-axis direction). As the separation distance D is changed, the intensity of the plasma may be changed. As the separation distance D becomes shorter, the intensity of the plasma may increase. The longer the separation distance (D), the strength of the plasma may be reduced. The separation distance D may be changed by the movement of the magnet part 5. Even when the magnet portion 5 is not moving, the separation distance D may be changed by erosion occurring on the target surface 31. In this case, erosion may occur partially at different depths in the target surface 31. Accordingly, the separation distance D may be partially different from each other depending on the degree of erosion occurring on the target surface 31. Accordingly, the central acquisition mechanism 41, the upper acquisition mechanism 42, and the lower acquisition mechanism 43 may acquire different plasma values. Specifically, it is as follows.

First, the central plasma value obtained by the central acquiring mechanism 41 is a central distance (CD) in which the target 3 and the magnet part 5 are separated based on the first axial direction (X-axis direction). , Shown in Figure 2). The central distance CD corresponds to the separation distance D at a portion corresponding to the central area CA. As shown in FIG. 2, the central distance CD may fluctuate as erosion occurs on the central target surface 311 of the target central portion 3a in the target 3. The target center part 3a is a part of the target 3 and means a part corresponding to the center area CA. Accordingly, the center distance (CD) refers to the distance from the center target surface 311 of the target center portion (3a), the magnet portion 5 based on the first axis direction (X-axis direction). can do. The substrate 100 may be supported by the support portion 2 such that the substrate center portion 100a is disposed at a position corresponding to the target center portion 3a. In this case, the center facing surface 110a of the substrate center portion 100a and the center target surface 311 of the target center portion 3a may be disposed to face each other. On the other hand, when the acquiring unit 4 includes a plurality of central acquiring mechanisms 41 arranged along the second axis direction (Y-axis direction), the central acquiring mechanisms 41 are located in the second axis direction ( Central plasma values of different sizes can be obtained for the central regions CA arranged along the Y-axis direction. This is because erosion may occur partially at different depths along the second axis direction (Y axis direction) in the central target surface 311.

Next, the upper plasma value obtained by the upper acquisition mechanism 42 is based on the first axial direction (X-axis direction), the upper distance (UD) between the target 3 and the magnet part 5 is separated from each other. , Shown in Figure 2). The upper distance UD corresponds to the separation distance D in a portion corresponding to the upper area UA. As shown in FIG. 2, the upper distance UD may fluctuate as erosion occurs on the upper target surface 312 of the target upper portion 3b in the target 3. The target upper portion 3b is a part of the target 3 and refers to a portion corresponding to the upper region UA. Accordingly, the upper distance UD refers to a distance in which the magnet part 5 is spaced apart from the upper target surface 312 of the target upper part 3b based on the first axial direction (X-axis direction). can do. The substrate 100 may be supported by the support portion 2 such that the substrate top portion 100b is disposed at a position corresponding to the target top portion 3b. In this case, the upper facing surface 110b of the substrate upper portion 100b and the upper target surface 312 of the target upper portion 3b may be disposed to face each other. On the other hand, when the acquiring unit 4 includes a plurality of upper acquiring mechanisms 42 arranged along the second axis direction (Y-axis direction), the upper acquiring mechanisms 42 are arranged in the second axis direction ( Upper plasma values of different sizes may be obtained for the upper regions UA disposed along the Y-axis direction. This is because erosion may occur partially at different depths along the second axis direction (Y axis direction) in the upper target surface 312.

Next, the lower plasma value acquired by the lower acquisition mechanism 43 is based on the first axial direction (X-axis direction), the target distance between the target 3 and the magnet part 5 is spaced apart (DD) , Shown in Figure 2). The lower distance DD corresponds to the separation distance D in a portion corresponding to the lower area DA. As illustrated in FIG. 2, the lower distance DD may fluctuate as erosion occurs on the lower target surface 313 of the lower target 3c in the target 3. The target lower portion 3c is a part of the target 3 and refers to a portion corresponding to the lower region DA. Accordingly, the lower distance DD refers to a distance in which the magnet part 5 is spaced from the lower target surface 313 of the target lower part 3c based on the first axial direction (X-axis direction). can do. The substrate 100 may be supported by the support portion 2 such that the substrate bottom portion 100c is disposed at a position corresponding to the target bottom portion 3c. In this case, the lower facing surface 110c of the substrate lower portion 100c and the lower target surface 313 of the target lower portion 3c may be disposed to face each other. On the other hand, when the acquiring unit 4 includes a plurality of lower acquisition mechanisms 43 arranged along the second axis direction (Y-axis direction), the lower acquisition mechanisms 43 are arranged in the second axis direction ( Lower plasma values of different sizes may be obtained for the lower regions DA arranged along the Y-axis direction. This is because erosion may occur partially at different depths along the second axis direction (Y axis direction) in the lower target surface 313.

Referring to FIG. 4, the magnet unit 5 may include a plurality of magnet modules 51 (shown in FIG. 4). The magnet modules 51 may be spaced apart from each other along the second axis direction (Y axis direction).

For example, as shown in FIG. 4, the magnet part 5 is disposed along the second axis direction (Y axis direction) of the first magnet module 51a, the second magnet module 51b, and the third magnet. Module 51c may be included. Based on the second axis direction (Y-axis direction), the second magnet module 51b may be disposed between the first magnet module 51a and the third magnet module 51c. The first magnet module 51a may adjust the intensity of plasma generated in the first central region CA1, the first upper region UA1, and the first lower region DA1. The second magnet module 51b may adjust the intensity of plasma generated in the second central region CA2, the second upper region UA2, and the second lower region DA2. The third magnet module 51c may adjust the intensity of plasma generated in the third central area CA3, the third upper area UA3, and the third lower area DA3. In FIG. 4, the magnet unit 5 is shown as including three magnet modules 51a, 51b, and 51c, but is not limited thereto, and the magnet unit 5 includes two or four or more magnet modules ( 51).

Based on the first axial direction (X-axis direction), one target 3 may be disposed between the magnet modules 51 and the substrate 100 supported by the support 2. Although not shown, a plurality of targets 3 are disposed between the magnet modules 51 and the substrate 100 supported on the support part 2 based on the first axial direction (X-axis direction). It may be. In this case, the targets 3 may be arranged along the second axis direction (Y axis direction). The number of magnet modules 51 and the number of targets 3 may be implemented in the same way. The number of magnet modules 51 may be implemented more than the number of targets 3.

1 to 5, the moving part 6 is to move the magnet part 5. The moving part 6 may adjust the separation distance D (shown in FIG. 1) by moving the magnet part 5 along the first axis direction (X-axis direction). Accordingly, the moving part 6 measures the intensity of the plasma generated between the substrate 100 supported by the support part 2 and the target 3 based on the first axial direction (X-axis direction). Can be adjusted. The moving part 6 may be disposed inside the chamber or outside the chamber. The moving part 6 is a cylinder method using a hydraulic cylinder or a pneumatic cylinder, a gear method using a rack gear (Rack Gear) and a pinion gear, a ball screw (Ball Screw) and a ball nut (Ball Nut). The magnet unit 5 may be moved through a ball screw method, a coil, and a linear motor method using a permanent magnet.

The moving part 6 may move the magnet part 5 using the plasma values acquired by the acquiring part 4. The acquiring unit 4 may provide the obtained plasma values to the mobile unit 6 using wired communication, wireless communication, or the like. The moving part 6 is the magnet part 5 such that at least one of the central plasma values, the upper plasma values, and the lower plasma values is adjusted based on the maximum central plasma value among the central plasma values. ). The maximum central plasma value means the largest value among the central plasma values obtained by the central acquisition mechanisms 41. Accordingly, the sputtering apparatus 1 according to the present invention can achieve the following operational effects.

First, the sputtering apparatus 1 according to the present invention moves the magnet part 5 by using the plasma values acquired by the acquiring part 4, so that the central plasma values, the upper plasma values, and the At least one of the lower plasma values can be adjusted. Accordingly, the sputtering apparatus 1 according to the present invention is changed even when environmental conditions such as erosion of the target 3, environmental conditions in the chamber, such as pressure of the process gas, etc. change during the sputtering process. At least one of the central plasma values, the upper plasma values, and the lower plasma values may be adjusted to correspond to process conditions, environmental conditions, and the like. Therefore, the sputtering apparatus 1 according to the present invention can improve the efficiency of the sputtering process by improving the ability to respond to changing process conditions, environmental conditions, etc. due to various factors during the sputtering process.

Second, the sputtering apparatus 1 according to the present invention adjusts at least one of the central plasma values, the upper plasma values, and the lower plasma values through the movement of the magnet part 5, thereby reducing the target ( For 3), the difference in the degree of partial erosion may be reduced. Accordingly, the sputtering apparatus 1 according to the present invention can extend the use life of the target 3 by increasing the total use of the target 3. Therefore, the sputtering apparatus 1 according to the present invention can reduce the process cost for the sputtering process. In addition, the sputtering apparatus 1 according to the present invention can extend the replacement life of the target 3 by extending the service life of the target 3. Therefore, the sputtering apparatus 1 according to the present invention can reduce the time required to stop the entire process due to the replacement of the target 3, thereby increasing the productivity of the substrate on which the sputtering process is completed through an increase in the utilization rate. .

Third, the sputtering apparatus 1 according to the present invention is implemented to adjust at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value. In general, more erosion occurs in the upper target surface 312 and the lower target surface 313 than in the central target surface 311, so that the upper area UA and the lower area DA are It is considered that the intensity of the plasma is stronger than the central region CA. Accordingly, the sputtering device 1 according to the present invention can reduce the deviation between erosion occurring in each of the upper target surface 312, the lower target surface 313, and the central target surface 311, It is possible to further improve the overall usage increase effect of the target 3 and the extension of the service life of the target 3. In addition, the sputtering apparatus 1 according to the present invention can improve the quality of the substrate 100 on which the sputtering process is completed. For example, when the sputtering process is a deposition process, the sputtering apparatus 1 according to the present invention can improve the uniformity of thickness and film quality for the thin film deposited on the substrate 100.

The moving part 6 may include an integral moving mechanism 61 (shown in FIG. 5).

The integral moving mechanism 61 moves all of the magnet modules 51 together along the first axis direction (X axis direction). The integral movement mechanism 61 may change the entire central distance CA, the upper distance UD, and the lower distance DD by moving all of the magnet module 51. Accordingly, the unitary movement mechanism 61 may adjust all of the central plasma values, the upper plasma values, and the lower plasma values. The integral movement mechanism 61 may move all of the mag modules 51 based on the maximum central plasma value. Accordingly, the integral moving mechanism 61 may adjust all of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value.

The integral moving mechanism 61 may be connected to all of the magnet modules 51 through the integral member 611. The integral member 611 is coupled to all of the magnet modules 51. The integral member 611 may be coupled to the integral moving mechanism 61. Accordingly, the integral moving mechanism 61 moves the integral member 611 along the first axial direction (X-axis direction) to move all of the magnet modules 51 in the first axial direction (X-axis). Direction). In this case, each of the magnet modules 51 may be integrally formed. 5, one integral member 611 is illustrated as being coupled to the magnet modules 51, but is not limited thereto, and two or more integral members 611 may be coupled to the magnet modules 51. have. When a plurality of integral members 611 are coupled to the magnet modules 51, the integral movement mechanism 61 may be coupled to at least one of the integral members 611.

1 to 6, the sputtering device 1 according to the present invention may include a control unit 7 (shown in FIG. 6).

The control unit 7 controls the moving unit 6. The control unit 7 may control the moving unit 6 according to the plasma values acquired by the obtaining unit 4. The control unit 7 may receive plasma values from the acquisition unit 4 using wired communication, wireless communication, or the like. In this case, the control unit 7 includes the central plasma values, the upper plasma values from the central acquisition mechanisms 41, the upper acquisition mechanisms 42, and the lower acquisition mechanisms 43, respectively. And the lower plasma values. The control unit 7 may extract the maximum central plasma value from the central plasma values. The control unit 7 may control the mobile unit 6 using wired communication, wireless communication, or the like. In this case, the control unit 7 controls the moving unit 6 such that at least one of the central plasma values, the upper plasma values, and the lower plasma values is adjusted based on the maximum central plasma value. can do.

The control unit 7 may include an extraction module 71, a comparison module 72, a derivation module 73, and a control module 74.

The extraction module 71 extracts the maximum plasma value. The extraction module 71 may extract the maximum central plasma value from the central plasma values obtained by the central acquisition mechanisms 41. In this case, the extraction module 71 may further extract location information of the central region CA corresponding to the maximum central plasma value among the central regions CA. The extraction module 71 may extract the maximum upper plasma value from the upper plasma values obtained by the upper acquisition mechanisms 42. The maximum upper plasma value means the largest value among the upper plasma values obtained by the upper acquisition mechanisms 42. In this case, the extraction module 71 may additionally extract location information of the upper region UA corresponding to the maximum upper plasma value among the upper regions UA. The extraction module 71 may extract the maximum lower plasma value from the lower plasma values obtained by the lower acquisition mechanisms 43. The maximum lower plasma value means the largest value among the lower plasma values obtained by the lower acquisition mechanisms 43. In this case, the extraction module 71 may additionally extract location information of the sub-region DA corresponding to the maximum sub-plasma value among the sub-regions DA.

The extraction module 71 may extract the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value according to any one of a real time, a preset unit time interval, and a preset accumulated power amount interval. In this case, the acquiring unit 4 may acquire the central plasma values, the upper plasma values, and the lower plasma values in real time and provide them to the extraction module 71. The unit time interval and the accumulated power amount interval are each derived through a pre-test, and may be preset by a user. The unit time interval and the accumulated power amount interval may be stored in the storage module 75 of the control unit 7, respectively. The accumulated electric power amount can be obtained through a measuring instrument (not shown) for measuring the electric power amount.

The comparison module 72 determines whether the upper value matches the maximum central plasma value. The upper value means a larger value among the maximum upper plasma value and the maximum lower plasma value. The comparison module 72 may derive the upper value by comparing the maximum upper plasma value and the maximum lower plasma value. In this case, the maximum upper plasma value and the maximum lower plasma value may be provided from the extraction module 71. When the upper value is derived, the comparison module 72 may determine whether the upper value and the maximum central plasma value match.

When the upper limit value and the maximum central plasma value completely match, the comparison module 72 may determine that the upper value and the maximum central plasma value match. According to the modified embodiment, if the difference between the upper value and the maximum central plasma value is within a preset reference range, the comparison module 72 may determine that the upper value and the maximum central plasma value match. have. When the difference between the upper value and the maximum central plasma value is outside the reference range, the comparison module 72 may determine that the upper value and the maximum central plasma value do not match. The reference range may be derived through a pre-test or the like and set in advance by a user. The reference range may be stored in the storage module 75 (shown in FIG. 6).

The derivation module 73 derives a reference area corresponding to the upper value. When the comparison module 72 determines that the upper value and the maximum central plasma value are different, the deriving module 73 may derive the reference area. As the sputtering process progresses, the intensity of plasma becomes stronger in each of the upper region UA and the lower region DA than the central region CA, so that the reference region is applied to the region having the greatest plasma intensity. It may be. The derivation module 73 may derive the reference region by using the extracted location information while the extraction module 71 extracts the maximum upper plasma value and the maximum lower plasma value. On the other hand, if the comparison module 72 determines that the upper value and the maximum central plasma value coincide with each other, the acquiring unit 4 may include the central plasma values, the upper plasma values, and the lower plasma values. You can reacquire them.

The control module 74 controls the moving part 6. If the comparison module 72 determines that the upper value and the maximum central plasma value are different, the control module 74 has the plasma intensity for the reference region derived by the deriving module 73 to the maximum central plasma. The unitary movement mechanism 61 can be controlled to match the value. Accordingly, the sputtering apparatus 1 according to the present invention can reduce the degree of erosion occurring in a portion of the target surface 31 corresponding to the reference region by reducing the intensity of the plasma with respect to the reference region. Therefore, the sputtering apparatus 1 according to the present invention can further increase the amount of use of a portion of the target surface 31 corresponding to the reference area. The control module 74 may control the integral movement mechanism 61 so that all of the magnet modules 51 move along the first axis direction (X axis direction). Accordingly, the control module 74 may adjust all of the central plasma values, the upper plasma values, and the lower plasma values.

The process of the control unit 7 controlling the moving unit 6 such that the intensity of the plasma with respect to the reference area matches the maximum central plasma value is exemplarily described as follows.

First, among the central areas CA, the central plasma value for the first central area CA1 is the largest, and among the upper areas UA, the upper plasma value for the second upper area UA2 is the highest. It will be described as an example in which the lower plasma value for the third lower region DA3 is the largest among the lower regions DA. Also, for example, when the lower plasma value for the third lower region DA3 is greater than the central plasma value for the first central region CA1 and the upper plasma value for the second upper region UA2, Explain.

Next, the extraction module 71 extracts the central plasma value for the first central region CA1 as the maximum central plasma value, and the upper plasma value for the second upper region UA2 is the maximum upper plasma. Value, and the lower plasma value for the third lower region DA3 may be extracted as the maximum lower plasma value.

Next, the comparison module 72 compares the upper plasma value for the second upper region UA2 and the lower plasma value for the third lower region DA3 to lower the lower portion for the third lower region DA3. The plasma value can be derived from the upper value. Thereafter, the comparison module 72 may determine that the lower plasma value for the third lower region DA3 is different from the maximum central plasma value.

Next, the derivation module 73 may derive the third lower region DA3 as the reference region.

Next, the control module 74 controls the integral moving mechanism 61 so that the lower plasma value for the third lower area DA3 matches the central plasma value for the first central area CA1. Can be. Since the lower plasma value for the third lower area DA3 is larger than the central plasma value for the first central area CA1, the integral moving mechanism 61 is in control of the control module 74. Accordingly, all of the magnet modules 52 may be moved to increase the lower distance DD. In this case, since all of the magnet modules 52 are moved, all of the central plasma values, the upper plasma values, and the lower plasma values can be adjusted.

1 to 6, the control unit 7 may include a switching module 76 (shown in FIG. 6).

The switching module 76 determines whether the maximum central plasma value exceeds a preset switching value. The conversion value compensates for the difference in erosion rate generated in the target 3 by adjusting the intensity of plasma based on the maximum central plasma value as erosion occurs in the target 3 as the sputtering process proceeds. It may be a plasma value that cannot be performed. The conversion value may be derived through a pre-test or the like and set in advance by a user. The conversion value may be stored in the storage module 75.

The switching module 76 may provide a result of determining whether the maximum central plasma value exceeds the switching value to at least one of the comparison module 72 and the control module 74. When it is determined that the maximum central plasma value exceeds the switching value, the control module 74 moves the first magnet unit 5 in the first axis direction (X-axis direction) to stop the movement. The part 6 can be controlled. In this case, the control module 74 may control the integral movement mechanism 61 so that movement in the first axis direction (X axis direction) to all of the magnet modules 51 is stopped. Accordingly, the sputtering process may be performed in a state in which the movement of the magnet modules 51 in the first axis direction (X-axis direction) is stopped. Therefore, the sputtering apparatus 1 according to the present invention can change the control method for the magnet modules 51 by changing the control method for the magnet modules 51 even when the sputtering process is performed to the end of the life cycle of the target 3. The total use of 3) can be further increased. In addition, the sputtering apparatus 1 according to the present invention can improve the uniformity of the thickness and film quality of the thin film deposited on the substrate 100 by changing the control method for the magnet modules 51. On the other hand, when it is determined that the maximum central plasma value is less than or equal to the switching value, the comparison module 72 may determine whether the highest value and the maximum central plasma value match after deriving the upper value.

1 to 7, the sputtering device 1 according to the present invention may include a swing portion 8 (shown in FIG. 6).

The swing part 8 is to swing the magnet part 5 relative to the target 3. For example, the swing part 8 can swing the magnet part 5 by reciprocating the magnet part 5 in the second axial direction (Y-axis direction). For example, the swing part 8 may swing the magnet part 5 by reciprocating the magnet part 5 in the vertical direction (Z-axis direction). For example, the swing part 8 moves the magnet part 5 reciprocally in the second axial direction (Y-axis direction) and reciprocates in the vertical direction (Z-axis direction), thereby allowing the magnet part 5 to move. ).

The swing portion 8 is coupled to the moving portion 6 to swing the moving portion 6, thereby allowing the magnet portion 5 to swing. The swing portion 8 may be coupled to the magnet portion 5 to swing the magnet portion 5. In this case, the moving part 6 is coupled to the swing part 8 to move the swing part 8 along the first axial direction (X-axis direction), thereby removing the magnet part 5 from the first. It can be moved along the 1-axis direction (X-axis direction). The swing part 8 is a cylinder method using a hydraulic cylinder or a pneumatic cylinder, a gear method using a rack gear (Rack Gear) and a pinion gear, a ball screw (Ball Screw) and a ball nut (Ball Nut). The magnet part 5 can be swinged through a ball screw method, a coil, and a linear motor method using a permanent magnet.

The swing part 8 can swing all of the magnet modules 51. The swing part 8 may adjust the swing distance SWD (SWD, shown in FIG. 7) in which the magnet modules 51 swing relative to the target 3. The swing part 8 may adjust the swing distance SWD by adjusting the distance that the magnet modules 51 reciprocate in the second axis direction (Y axis direction). The swing part 8 may adjust the swing distance SWD by adjusting the distance that the magnet modules 51 reciprocate in the vertical direction (Z-axis direction). The swing portion 8 is the distance that the magnet modules 51 reciprocate in the second axis direction (Y-axis direction) and the distance that the magnet modules 51 reciprocate in the vertical direction (Z-axis direction). The swing distance SWD may be adjusted by adjusting all of them.

Accordingly, the sputtering apparatus 1 according to the present invention is implemented to adjust the swing distance SWD, thereby increasing the total amount of use of the target 3. For example, the sputtering apparatus 1 according to the present invention can increase the swing distance SWD, thereby increasing the area of the portion where erosion occurs in the target 3, thereby increasing the area where the target 3 is used. The total amount of use for the target 3 can be increased.

The swing unit 8 may adjust the waiting time for the magnet modules 51 to wait at both ends of the swing path. If the magnet modules 51 are swing paths that reciprocate in the second axial direction (Y-axis direction), the swing section 8 stops the magnet modules 51 at each of the left and right ends of the swing path. The waiting time can be adjusted by adjusting the time in the state. If the magnet modules 51 are swing paths that reciprocate in the vertical direction (Z-axis direction), the swing part 8 is in a state where the magnet modules 51 are stopped at each of the upper and lower ends of the swing path. The waiting time can be adjusted by adjusting the time. If the magnet modules 51 are reciprocating in the second axial direction (Y-axis direction) and swing paths reciprocating in the vertical direction (Z-axis direction), the swing unit 8 is the magnet module ( 51) the waiting time by adjusting at least one of the time at which it is stopped at each of the left and right ends of the swing path and the time at which the magnet module 51 is stopped at each of the upper and lower ends of the swing path. Can be adjusted.

Accordingly, the sputtering device 1 according to the present invention is implemented to adjust the waiting time, thereby increasing the total amount of use of the target 3. For example, the sputtering apparatus 1 according to the present invention can increase the amount of erosion occurring at both ends of the target 3 by increasing the waiting time, thereby increasing the amount of use of both ends of the target 3. Can be. The swing part 8 may adjust both the swing distance SWD and the waiting time.

When the sputtering device 1 according to the present invention includes the swing portion 8, the control unit 7 may include a change module 77 (shown in FIG. 6).

The change module 77 controls the swing unit 8 such that at least one of the swing distance SWD and the waiting time is changed. The change module 77, when all of the magnet modules 51 are moved in the first axis direction (X axis direction) based on the maximum central plasma value, the swing distance (SWD) and the waiting time The swing unit 8 may be controlled so that at least one of them is changed. For example, when all of the magnet module 51 is moved such that the separation distance D spaced apart from the target 3 is reduced, the change module 77 is at least one of the swing distance SWD and the waiting time. It is possible to control the swing portion 8 so as to decrease. For example, when all of the magnet module 51 is moved to increase the separation distance D spaced apart from the target 3, the change module 77 is at least one of the swing distance (SWD) and the waiting time The swing portion 8 can be controlled to increase. Therefore, the sputtering apparatus 1 according to the present invention is implemented to change at least one of the swing distance SWD and the waiting time by using the change module 77, and thus causes various factors during the sputtering process. Therefore, the efficiency of the sputtering process can be further improved by further improving the ability to respond to changing process conditions and environmental conditions.

The change module 77 may control the swing unit 8 such that at least one of the swing distance SWD and the waiting time is changed according to a preset change condition. The change module 77 may determine whether the change condition is satisfied by using the values extracted by the extraction module 71, and control the swing unit 8 according to the determination result. Specifically, it is as follows.

First, the change module 77, if the maximum central plasma value or the accumulated electric power is equal to or greater than a preset change start value, the swing unit (8) so that the change to at least one of the swing distance (SWD) and the waiting time starts ) Can be controlled. The change start value may be derived through a pre-test or the like and set in advance by a user. The change start value may be stored in the storage module 75. Even if all of the magnet modules 51 are moved in the first axis direction (X-axis direction), if the maximum central plasma value or the integrated power amount is less than the change start value, the change distance 77 ) And the swing time 8 can be controlled so that the waiting time remains unchanged. In this case, the change module 77 is configured to swing the magnet modules 51 according to a preset swing distance (SWD) and a waiting time before the maximum central plasma value or the accumulated power amount exceeds the change start value. The swing part 8 can be controlled.

Next, after the change of at least one of the swing distance (SWD) and the waiting time is started, the change module 77 is based on the maximum central plasma value, all of the magnet modules 51 are the first The swing unit 8 may be controlled such that at least one of the swing distance SWD and the waiting time is changed in conjunction with movement along the one-axis direction (X-axis direction). The change module 77 is at least one of the swing distance SWD and the waiting time in association with a movement direction and a movement distance in which all of the magnet modules 51 move along the first axis direction (X axis direction). The swing part 8 can be controlled so that one is changed. In this case, at least one of the swing distance SWD and the waiting time is changed in conjunction with a movement direction and a movement distance in which all of the magnet modules 51 move along the first axis direction (X-axis direction). The degree may be derived through a pre-test or the like and preset by the user.

Next, after the change of at least one of the swing distance (SWD) and the waiting time is started, the change module (77) if the maximum central plasma value or the accumulated power amount is greater than or equal to a preset change stop value ( SWD) and the swing unit 8 may be controlled to stop the change to at least one of the waiting times. The change interruption value may be derived through a pre-test or the like and set in advance by a user. The change interruption value may be stored in the storage module 75. Even if all of the magnet modules 51 are moved in the first axis direction (X-axis direction), if the maximum central plasma value or the accumulated power amount is greater than or equal to the change stop value, the swing module SWD ) And the swing time 8 can be controlled so that the waiting time remains unchanged. In this case, the change module 77 causes the magnet modules 51 to swing according to the last changed swing distance (SWD) and waiting time immediately before the maximum central plasma value or the accumulated power amount becomes equal to or greater than the change stop value. The swing part 8 can be controlled. On the other hand, when it is determined that the maximum central plasma value exceeds the switching value, the change module 77 changes the at least one of the swing distance SWD and the waiting time regardless of the change stop value. The swing part 8 can be controlled to be stopped. In this case, the change module 77 swings the swing module (so that the magnet modules 51 swing according to the last changed swing distance SWD and waiting time just before the maximum central plasma value exceeds the switching value) 8) can be controlled.

As described above, the sputtering apparatus 1 according to the present invention is implemented such that at least one of the swing distance SWD and the waiting time is changed according to the change condition, and thus changes due to various factors during the sputtering process. The ability to respond to process conditions and environmental conditions can be further improved. The change start value and the change stop value may respectively correspond to the change condition.

When the sputtering device 1 according to the present invention includes the swing portion 8, the control unit 7 may include a conversion module 78.

The conversion module 78 controls the swing unit 8 such that at least one of the swing distance SWD and the waiting time is converted according to a preset conversion condition. The conversion module 78 may determine whether the conversion condition is satisfied by using the values extracted by the extraction module 71, and control the swing unit 8 according to the determination result. When the conversion condition is that the erosion occurs in the target 3 due to the progress of the sputtering process, it is impossible to compensate for the difference in the erosion rate generated in the target 3 by maintaining the swing distance SWD and the waiting time Can be The conversion condition may be derived through a pre-test or the like and set in advance by a user. The conversion conditions may be stored in the storage module 75. When it is determined that the conversion module 78 satisfies the conversion condition, the control module 74 may control the swing unit 8 such that at least one of the swing distance SWD and the waiting time is converted. have.

The conversion module 78 is at least one of the swing distance SWD and the waiting time according to the conversion condition, regardless of the movement of the magnet modules 51 in the first axis direction (X axis direction). The swing part 8 can be controlled so that one is converted. That is, the control of the swing unit 8 by the conversion module 78 and the control of the moving unit 6 by the control module 74 may be made independently of each other.

The conversion module 78 when the difference between the maximum central plasma value and the maximum upper plasma value exceeds a preset reference value and when the difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value If any one of them, the swing unit 8 can be controlled such that at least one of the swing distance SWD and the waiting time is converted. The reference value may be derived through a pre-test or the like and set in advance by a user. The reference value may be stored in the storage module 75. The reference value may correspond to the conversion condition.

For example, when the difference between the maximum central plasma value and the maximum upper plasma value exceeds the reference value, the conversion module 78 increases the swing distance SW to increase at least one of the swing distance SWD and the waiting time ( 8) can be controlled. When the difference between the maximum central plasma value and the maximum upper plasma value is less than or equal to the reference value, the conversion module 78 controls the swing unit 8 such that the swing distance SWD and the waiting time are maintained without being converted. can do.

For example, when the difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value, the conversion module 78 may increase the swing distance so that at least one of the swing distance SWD and the waiting time increases. (8) can be controlled. When the difference between the maximum central plasma value and the maximum lower plasma value is less than or equal to the reference value, the conversion module 78 moves the swing unit 8 so that the swing distance SWD and the waiting time are maintained without being converted. Can be controlled.

Therefore, the sputtering apparatus 1 according to the present invention is implemented to convert at least one of the swing distance SWD and the waiting time using the conversion module 78, and thus can be used as various factors during the sputtering process. Therefore, the efficiency of the sputtering process can be further improved by further improving the ability to respond to changing process conditions and environmental conditions.

The conversion module 78 may control the swing unit 8 such that at least one of the swing distance SWD and the waiting time is converted by using the maximum central plasma value or the accumulated power amount as a conversion condition. Specifically, it is as follows.

First, the conversion module 78, if the maximum central plasma value or the accumulated power amount is greater than or equal to a preset conversion start value, the swing unit (8) to start conversion for at least one of the swing distance (SWD) and the waiting time. ) Can be controlled. The conversion start value may be derived through a pre-test or the like and set in advance by a user. The conversion start value may be stored in the storage module 75. The conversion module 78 may control the swing unit 8 so that the swing distance SWD and the waiting time are maintained without being converted if the maximum central plasma value or the accumulated power amount is less than the conversion start value. In this case, the conversion module 78 is configured to swing the magnet modules 51 according to a preset swing distance (SWD) and a waiting time before the maximum central plasma value or the accumulated power amount exceeds the conversion start value. The swing part 8 can be controlled.

Next, after conversion for at least one of the swing distance (SWD) and the waiting time starts, the conversion module 78 is greater than or equal to a plurality of preset conversion interval values based on the conversion start value. The swing unit 8 may be controlled such that at least one of the swing distance SWD and the waiting time is converted. The conversion interval value is a preset interval value based on the conversion start value, and may be derived through a pre-test or the like and preset by the user. The conversion interval value may be stored in the storage module 75. For example, the conversion module 78 may control the swing unit 8 such that at least one of the swing distance SWD and the waiting time is converted every 20 increments based on the conversion start value. . In this case, the degree of converting at least one of the swing distance SWD and the waiting time whenever the conversion interval value is greater than or equal to the conversion interval value may be derived through a pre-test or the like and preset by a user.

Next, after the conversion for at least one of the swing distance SWD and the waiting time is started, the conversion module 78 determines the swing distance if the maximum central plasma value or the accumulated power amount is greater than or equal to a preset conversion stop value ( SWD) and at least one of the waiting times may be controlled so that the swing unit 8 is stopped. The conversion stop value may be derived through a pre-test or the like and set in advance by a user. The conversion stop value may be stored in the storage module 75. When the maximum central plasma value or the accumulated power amount is greater than or equal to the conversion stop value, the conversion module 78 converts the swing distance (SWD) last converted just before the maximum central plasma value or the accumulated power amount becomes greater than or equal to the conversion stop value. ) And the swing unit 8 can be controlled to swing the magnet modules 51 according to the waiting time.

Meanwhile, when it is determined that the maximum central plasma value exceeds the conversion value, the conversion module 78 converts at least one of the swing distance SWD and the waiting time regardless of the conversion stop value. The swing part 8 can be controlled to be stopped. In this case, the conversion module 78 is the swing unit so that the magnet modules 51 swing according to the swing distance SWD and the waiting time last converted just before the maximum central plasma value exceeds the conversion value. (8) can be controlled.

On the other hand, even if it is determined that the maximum central plasma value has exceeded the conversion value, the conversion module 78 is the maximum central plasma value until the maximum central plasma value or the accumulated power amount exceeds the conversion stop value. Alternatively, the swing unit 8 may be controlled such that at least one of the swing distance SWD and the waiting time is converted according to the accumulated power amount.

As described above, the sputtering apparatus 1 according to the present invention is implemented so that at least one of the swing distance SWD and the waiting time is converted according to the conversion conditions, and changes due to various factors during the sputtering process. The ability to respond to process conditions and environmental conditions can be further improved. The conversion start value, the conversion interval value, and the conversion stop value may respectively correspond to the conversion condition.

Meanwhile, in the above description, it is described that the conversion module 78 controls the swing part 8 according to the conversion condition, and the change module 77 controls the swing part 8 according to the change condition. However, the sputtering apparatus 1 according to the present invention is not limited thereto, and the conversion module 78 may be implemented to control the swing unit 8 according to each of the conversion conditions and the change conditions. In this case, the control unit 7 may be implemented to include only the conversion module 78 without separately providing the change module 77 to control the swing unit 8. The sputtering device 1 according to the present invention may be implemented so that the control module 74 controls the swing part 8 according to each of the conversion condition and the change condition. In this case, the control unit 7 may not be provided with the change module 77 and the conversion module 78 to control the swing unit 8, and may be implemented to include only the control module 74. have.

8 to 10, the sputtering apparatus 1 according to the modified embodiment of the present invention includes the support 2, the target 3, the acquisition 4, the magnet 5, And the moving part 6. The support part 2, the target 3, the acquiring part 4, the magnet part 5, and the moving part 6 are substantially identical to those described in the sputtering device 1 according to the present invention described above. Therefore, hereinafter, the differences will be mainly described.

8 to 10, the magnet modules 51 may include a central magnet 511, an upper magnet 512, and a lower magnet 513, respectively.

The central magnet 511 adjusts the intensity of plasma generated in the central area CA. The central magnet 511 may be disposed at a position spaced apart from the target 3 by the central distance CD based on the first axial direction (X-axis direction). The central distance (CD) may refer to a distance that the central magnet 511 is spaced apart from the central target surface 311 based on the first axis direction (X-axis direction). When the central distance CD is changed, the intensity of the plasma generated in the central area CA may be changed.

The upper magnet 512 adjusts the intensity of plasma generated in the upper region UA. The upper magnet 512 may be disposed at a position spaced apart from the target 3 by the upper distance UD based on the first axial direction (X-axis direction). The upper distance UD may mean a distance that the upper magnet 512 is spaced apart from the upper target surface 312 based on the first axial direction (X-axis direction). When the upper distance UD is changed, the intensity of the plasma generated in the upper area UA may be changed.

The lower magnet 513 adjusts the intensity of the plasma generated in the lower area DA. The lower magnet 513 may be disposed at a position spaced apart from the target 3 by the lower distance DD based on the first axial direction (X-axis direction). The lower distance DD may mean a distance in which the lower magnet 513 is spaced apart from the lower target surface 313 based on the first axial direction (X-axis direction). When the lower distance DD changes, the intensity of the plasma generated in the lower area DA may vary.

As illustrated in FIG. 10, when the magnet part 5 includes the first magnet module 51a, the second magnet module 51b, and the third magnet module 51c, the first magnet The module 51a, the second magnet module 51b, and the third magnet module 51c may be implemented as follows.

First, the first magnet module 51a may include a first central magnet 511a, a first upper magnet 512a, and a first lower magnet 513a. The first central magnet 511a may adjust the intensity of the plasma generated in the first central region CA1. The first upper magnet 512a may adjust the intensity of plasma generated in the first upper region UA1. The first lower magnet 513a may adjust the intensity of plasma generated in the first lower region DA1.

Next, the second magnet module 51b may include a second central magnet 511b, a second upper magnet 512b, and a second lower magnet 513b. The second central magnet 511b may adjust the intensity of the plasma generated in the second central region CA2. The second upper magnet 512b may control the intensity of plasma generated in the second upper region UA2. The second lower magnet 513b may control the intensity of the plasma generated in the second lower region DA2.

Next, the third magnet module 51c may include a third central magnet 511c, a third upper magnet 512c, and a third lower magnet 513c. The third central magnet 511c may adjust the intensity of the plasma generated in the third central region CA3. The third upper magnet 512c may control the intensity of plasma generated in the third upper region UA3. The third lower magnet 513c may control the intensity of the plasma generated in the third lower region DA3.

8 to 11, the moving part 6 may include a central moving mechanism 62, an upper moving mechanism 63, and a lower moving mechanism 64.

The central moving mechanism 62 moves all of the central magnets 511 together along the first axis direction (X axis direction). The central movement mechanism 62 may change all of the central distances CA by moving all of the central magnets 511. Accordingly, the central moving mechanism 62 can adjust all of the central plasma values. The central moving mechanism 62 may be connected to all of the central magnets 511 through a central connecting member 621 (shown in FIG. 11). The central connecting member 621 is coupled to all of the central magnets 511. Accordingly, the central moving mechanism 62 may move all of the central magnets 511 by moving the central connecting member 621. 11, one central connecting member 621 is illustrated as being coupled to the central magnets 511, but is not limited thereto, and two or more central connecting members 621 are coupled to the central magnets 511. It may be. When a plurality of central connecting members 621 are coupled to the central magnets 511, the central moving mechanism 62 may be coupled to at least one of the central connecting members 621.

The upper moving mechanism 63 is to move all of the upper magnets 512 along the first axial direction (X-axis direction). The upper moving mechanism 63 may change all of the upper distances UA by moving all of the upper magnets 512. Accordingly, the upper moving mechanism 63 may adjust all of the upper plasma values. The upper moving mechanism 63 may be connected to all of the upper magnets 512 through the upper connecting member 631 (shown in FIG. 11). The upper connecting member 631 is coupled to all of the upper magnets 512. Accordingly, the upper moving mechanism 63 may move all of the upper magnets 512 by moving the upper connecting member 631. 11, one upper connecting member 631 is illustrated as being coupled to the upper magnets 512, but is not limited thereto, and two or more upper connecting members 631 are coupled to the upper magnets 512. It may be. When a plurality of upper connecting members 631 are coupled to the upper magnets 512, the upper moving mechanism 63 may be coupled to at least one of the upper connecting members 631.

The lower moving mechanism 64 is to move all of the lower magnets 513 together along the first axial direction (X-axis direction). The lower moving mechanism 64 may change all of the lower distances DA by moving all of the lower magnets 513. Accordingly, the lower moving mechanism 64 can adjust all of the lower plasma values. The lower moving mechanism 64 may be connected to all of the lower magnets 513 through a lower connecting member 641 (shown in FIG. 11). The lower connecting member 641 is coupled to all of the lower magnets 513. Accordingly, the lower moving mechanism 64 may move all of the lower magnets 513 by moving the lower connecting member 641. 11, one lower connecting member 641 is illustrated as being coupled to the lower magnets 513, but is not limited thereto, and two or more lower connecting members 641 are coupled to the lower magnets 513. It may be. When a plurality of lower connecting members 641 are coupled to the lower magnets 513, the lower moving mechanism 64 may be coupled to at least one of the lower connecting members 641.

The moving part 6 may include the integral moving mechanism 61.

The integral moving mechanism 61 moves all of the central magnets 511, the upper magnets 512, and the lower magnets 513 along the first axial direction (X-axis direction). . That is, the integral moving mechanism 61 may move all of the magnet modules 51 together in the first axial direction (X-axis direction). The unitary movement mechanism 61 moves the central magnets 511, the upper magnets 512, and the lower magnets 513 to move the central distances CA, the upper distances UD ), And all of the lower distances DD. Accordingly, the unitary movement mechanism 61 may adjust all of the central plasma values, the upper plasma values, and the lower plasma values. The integral movement mechanism 61 may be coupled to the central movement mechanism 62, the upper movement mechanism 63, and the lower movement mechanism 64. In this case, the integral moving mechanism 61 moves the central moving mechanism 62, the upper moving mechanism 63, and the lower moving mechanism 64, so that the central magnets 511, the upper magnet The fields 512 and all of the lower magnets 513 may be moved.

8 to 12, the sputtering apparatus 1 according to the modified embodiment of the present invention may include the control unit 7.

The control unit 7 controls the moving unit 6. Since the control unit 7 is roughly the same as that described in the sputtering apparatus 1 according to the present invention described above, hereinafter, description will be made focusing on differences. The control unit 7 may include the extraction module 71, the comparison module 72, the derivation module 73, and the control module 74.

The extraction module 71 may extract the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value. Since the extraction module 71 is the same as described in the sputtering apparatus 1 according to the present invention described above, a detailed description thereof will be omitted.

The comparison module 72 may determine whether each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value. The maximum upper plasma value, the maximum lower plasma value, and the maximum upper plasma value are extracted by the extraction module 71.

When the maximum upper plasma value and the maximum central plasma value completely match, the comparison module 72 may determine that the maximum upper plasma value and the maximum central plasma value match. According to the modified embodiment, if the difference between the maximum upper plasma value and the maximum central plasma value is within the reference range, the comparison module 72 is the same as the maximum upper plasma value and the maximum central plasma value. I can judge. When the difference between the maximum upper plasma value and the maximum central plasma value is outside the reference range, the comparison module 72 may determine that the maximum upper plasma value and the maximum central plasma value do not match.

When the maximum lower plasma value and the maximum central plasma value completely match, the comparison module 72 may determine that the maximum lower plasma value and the maximum central plasma value match. According to the modified embodiment, if the difference between the maximum lower plasma value and the maximum central plasma value is within the reference range, the comparison module 72 matches the maximum lower plasma value and the maximum central plasma value. I can judge. If the difference between the maximum lower plasma value and the maximum central plasma value is outside the reference range, the comparison module 72 may determine that the maximum lower plasma value and the maximum central plasma value do not match.

The derivation module 73 may derive an upper reference area corresponding to the maximum upper plasma value. When the comparison module 72 determines that the maximum upper plasma value and the maximum central plasma value are different, the derivation module 73 may derive the upper reference region. The upper reference region may correspond to a region having the greatest plasma intensity among the upper regions UA. The derivation module 73 may derive the upper reference region by using the extracted location information while the extraction module 71 extracts the maximum upper plasma value.

The derivation module 73 may derive a lower reference region corresponding to the maximum lower plasma value. When the comparison module 72 determines that the maximum lower plasma value and the maximum central plasma value are different, the derivation module 73 may derive the lower reference region. The lower reference region may correspond to a region having the greatest intensity of plasma among the lower regions DA. The derivation module 73 may derive the lower reference region by using the extracted location information while the extraction module 71 extracts the maximum lower plasma value.

On the other hand, if the comparison module 72 determines that each of the maximum upper plasma value and the maximum lower plasma value coincides with the maximum central plasma value, the acquiring unit 4 displays the central plasma values and the upper plasma. The values and the lower plasma values can be reacquired.

When the control module 74 determines that the maximum upper plasma value and the maximum central plasma value are different, the intensity of plasma for the upper reference region derived by the derivation module 73 coincides with the maximum central plasma value. The upper moving mechanism 63 can be controlled. Accordingly, the sputtering apparatus 1 according to the present invention can reduce the degree of erosion occurring in a portion of the target surface 31 corresponding to the upper reference region by reducing the intensity of the plasma with respect to the upper reference region. have. Therefore, the sputtering apparatus 1 according to the present invention can further increase the amount of use of a portion of the target surface 31 corresponding to the upper reference area. The control module 74 may control the upper moving mechanism 63 such that all of the upper magnets 512 move along the first axis direction (X-axis direction). Accordingly, the control module 74 can adjust all of the upper plasma values. In the state in which the movement of the central magnets 511 in the first axis direction (X-axis direction) is stopped, the control module 74 has the maximum central plasma value of the plasma intensity for the upper reference area. It is possible to control the upper moving mechanism 63 to match the. In this case, the control module 74 controls the central movement mechanism 62 so that movement in the first axis direction (X-axis direction) with respect to all of the central magnets 511 remains stopped. Can be.

If the control module 74 determines that the maximum lower plasma value and the maximum central plasma value are different, the intensity of the plasma for the lower reference region derived by the derivation module 73 coincides with the maximum central plasma value. The lower moving mechanism 64 can be controlled. Accordingly, the sputtering apparatus 1 according to the present invention can reduce the degree of erosion occurring in a portion of the target surface 31 corresponding to the lower reference region by reducing the intensity of the plasma with respect to the lower reference region. have. Therefore, the sputtering apparatus 1 according to the present invention can further increase the amount of use of a portion of the target surface 31 corresponding to the lower reference area. The control module 74 may control the lower moving mechanism 64 such that all of the lower magnets 513 move along the first axis direction (X-axis direction). Accordingly, the control module 74 may adjust all of the lower plasma values. In the state in which the movement of the central magnet 511 in the first axial direction (X-axis direction) is stopped, the control module 74 has the maximum central plasma value of the plasma intensity for the lower reference region. The lower moving mechanism 64 can be controlled to be matched with. In this case, the control module 74 controls the central movement mechanism 62 so that movement in the first axis direction (X-axis direction) with respect to all of the central magnets 511 remains stopped. Can be.

Exemplarily a process in which the control unit 7 controls the moving unit 6 such that the intensity of the plasma for the upper reference region and the intensity of the plasma for the lower reference region coincide with the maximum central plasma value. Looking at it, it is as follows.

First, among the central areas CA, the central plasma value for the first central area CA1 is the largest, and among the upper areas UA, the upper plasma value for the second upper area UA2 is the highest. It will be described as an example in which the lower plasma value for the third lower region DA3 is the largest among the lower regions DA.

Next, the extraction module 71 extracts the central plasma value for the first central region CA1 as the maximum central plasma value, and the upper plasma value for the second upper region UA2 is the maximum upper plasma. Value, and the lower plasma value for the third lower region DA3 may be extracted as the maximum lower plasma value.

Next, the comparison module 72 may determine that the upper plasma value for the second upper region UA2 is different from the maximum central plasma value. The comparison module 72 may determine that the lower plasma value for the third lower region DA3 is different from the maximum central plasma value.

Next, the derivation module 73 may derive the second upper region UA2 as the upper reference region. The derivation module 73 may derive the third lower region DA3 as the lower reference region.

Next, the control module 74 controls the upper moving mechanism 63 so that the upper plasma value for the second upper region UA2 coincides with the central plasma value for the first central region CA1. Can be. In this case, the control module 74 is configured to move all of the upper magnets 512 in a state in which movement in the first axis direction (X-axis direction) to all of the central magnets 511 is stopped. The central moving mechanism 62 and the upper moving mechanism 63 can be controlled. The control module 74 may control the lower moving mechanism 64 such that the lower plasma value for the third lower region DA3 matches the central plasma value for the first central region CA1. . In this case, the control module 74 is such that all of the lower magnets 513 are moved in a state in which movement in the first axis direction (X-axis direction) with respect to all of the central magnets 511 is stopped. The central moving mechanism 62 and the lower moving mechanism 64 can be controlled.

8 to 12, the control unit 7 may include the switching module 76. The switching module 76 may determine whether the maximum central plasma value exceeds the switching value. Since the switching module 76 is the same as described in the sputtering device 1 according to the present invention described above, detailed description thereof will be omitted.

When it is determined by the switching module 76 that the maximum central plasma value exceeds the switching value, the control module 74 includes the central magnets 511, the upper magnets 512, and the lower portion. After the magnets 513 move together, the moving part 6 can be controlled to further move only the central magnets 511. In this case, the control module 74 may control the integral moving mechanism 61 such that the central magnets 511, the upper magnets 512, and the lower magnets 513 move together. Thereafter, the control module 74 may control the central movement mechanism 62 so that only the central magnets 511 are additionally moved. After the control module 74 moves the central magnets 511, the upper magnets 512, and the lower magnets 513 together such that the maximum central plasma value becomes a first preset value, Only the central magnets 511 may be additionally moved so that the maximum central plasma value becomes a preset second set value. The first set value and the second set value are respectively assigned to the target 3 after the maximum central plasma value exceeds the switching value as erosion occurs in the target 3 as the sputtering process proceeds. It may be a plasma value capable of compensating for a difference in the partially eroded rate. Each of the first set value and the second set value may be derived through a pre-test and the like and set in advance by a user. The first set value and the second set value may be respectively stored in the storage module 75. The first set value and the second set value may be set to different values.

When it is determined by the switching module 76 that the maximum central plasma value exceeds the switching value, the control module 74 is in the first axis direction (X-axis direction) with respect to the magnet part 5. The moving part 6 may be controlled so that the movement to the stop is made. In this case, the control module 74 is the central movement mechanism 62, the upper movement mechanism 63 so that the movement in the first axis direction (X-axis direction) to all of the magnet module 51 is stopped ), The lower moving mechanism 64, and the integral moving mechanism 61 can be controlled. Accordingly, the sputtering process may be performed in a state in which the movement of the magnet modules 51 in the first axis direction (X-axis direction) is stopped.

As described above, the sputtering apparatus 1 according to the modified embodiment of the present invention, even if the sputtering process is performed to the extent that it belongs to the end of the life cycle of the target 3, the central magnets 511, the By changing the control method for the upper magnets 512 and the lower magnets 513, the total usage of the target 3 can be further increased. In addition, the sputtering device 1 according to the modified embodiment of the present invention is the substrate through the control method for the central magnets 511, the upper magnets 512, and the lower magnets 513 It is possible to improve the uniformity of the thickness and film quality for the thin film deposited on (100). Meanwhile, when it is determined that the maximum central plasma value is less than or equal to the conversion value, the comparison module 72 may determine whether each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value. have.

8 to 12, the sputtering device 1 according to the modified embodiment of the present invention may include the swing portion 8 (shown in FIG. 12). The swing part 8 can swing the magnet part 5. Since the swing portion 8 is the same as described in the sputtering apparatus 1 according to the present invention described above, a detailed description thereof will be omitted.

When the sputtering device 1 according to the modified embodiment of the present invention includes the swing portion 8, the control unit 7 may include the change module 77 (shown in FIG. 12). When the control module 73 moves all of the upper magnets 512 along the first axial direction (X-axis direction) based on the maximum central plasma value, the change module 77 swings The swing unit 8 may be controlled such that at least one of the distance SWD and the waiting time is adjusted. In this case, when the control module 73 moves all of the upper magnets 512 along the first axis direction (X-axis direction), the change module 77 includes the central magnets 511, The swing part 8 may be controlled such that at least one of the swing distance SWD and the waiting time is adjusted for all of the upper magnets 512 and the lower magnets 513. When the control module 74 moves all of the lower magnets 513 along the first axis direction (X-axis direction) based on the maximum central plasma value, the change module 77 swings The swing unit 8 may be controlled such that at least one of the distance SWD and the waiting time is adjusted. In this case, when the control module 74 moves all of the lower magnets 513 along the first axis direction (X-axis direction), the change module 77 includes the central magnets 511, The swing part 8 may be controlled such that at least one of the swing distance SWD and the waiting time is adjusted for all of the upper magnets 512 and the lower magnets 513.

The change module 77 may control the swing unit 8 such that at least one of the swing distance SWD and the waiting time is changed according to the change condition. Specifically, it is as follows.

First, if the maximum central plasma value or the accumulated power amount is greater than or equal to the change start value, the change module 77 will cause the swing unit 8 to change at least one of the swing distance SWD and waiting time. Can be controlled. Even if all of the upper magnets 512 are moved along the first axis direction (X-axis direction), if the maximum central plasma value or the accumulated power amount is less than the change start value, the change module 77 SWD) and the waiting time may be controlled so that the swing portion 8 is maintained. Even if all of the lower magnets 513 are moved along the first axis direction (X-axis direction), if the maximum central plasma value or the accumulated electric power amount is less than the change start value, the change module 77 SWD) and the waiting time may be controlled so that the swing portion 8 is maintained. In this case, the change module 77 is configured to swing the magnet modules 51 according to a preset swing distance (SWD) and a waiting time before the maximum central plasma value or the accumulated power amount exceeds the change start value. The swing part 8 can be controlled.

Next, after the change of at least one of the swing distance (SWD) and the waiting time is started, the change module 77 is based on the maximum central plasma value, all of the upper magnets 512 are the first The swing unit 8 may be controlled such that at least one of the swing distance SWD and the waiting time is changed in conjunction with movement along the one-axis direction (X-axis direction). The change module 77 is at least one of the swing distance SWD and the waiting time in association with the movement direction and the movement distance in which all of the upper magnets 512 move along the first axis direction (X-axis direction). The swing part 8 can be controlled so that one is changed. In this case, at least one of the swing distance SWD and the waiting time is changed in association with the movement direction and the movement distance in which all of the upper magnets 512 move along the first axis direction (X-axis direction). The degree may be derived through a pre-test or the like and preset by the user. On the other hand, after the change in at least one of the swing distance (SWD) and the waiting time is started, the change module 77 is based on the maximum central plasma value, all of the lower magnets 513 are the first The swing unit 8 may be controlled such that at least one of the swing distance SWD and the waiting time is changed in conjunction with movement along the one-axis direction (X-axis direction).

Next, after the change of at least one of the swing distance (SWD) and the waiting time is started, the change module (77) if the maximum central plasma value or the accumulated power amount is greater than or equal to a preset change stop value ( SWD) and the swing unit 8 may be controlled to stop the change to at least one of the waiting times. Even if all of the upper magnets 512 are moved in the first axis direction (X-axis direction), if the maximum central plasma value or the accumulated power amount is greater than or equal to the change stop value, the change module 77 ) And the swing time 8 can be controlled so that the waiting time remains unchanged. Even if all of the lower magnets 513 are moved in the first axial direction (X-axis direction), the change module 77 is the swing distance (SWD ) And the swing time 8 can be controlled so that the waiting time remains unchanged. In this case, the change module 77 causes the magnet modules 51 to swing according to the last changed swing distance (SWD) and waiting time immediately before the maximum central plasma value or the accumulated power amount becomes equal to or greater than the change stop value. The swing part 8 can be controlled. On the other hand, when it is determined that the maximum central plasma value exceeds the switching value, the change module 77 changes the at least one of the swing distance SWD and the waiting time regardless of the change stop value. The swing part 8 can be controlled to be stopped. In this case, the change module 77 swings the swing module (so that the magnet modules 51 swing according to the last changed swing distance SWD and waiting time just before the maximum central plasma value exceeds the switching value) 8) can be controlled.

When the sputtering device 1 according to the modified embodiment of the present invention includes the swing portion 8, the control unit 7 may include the conversion module 78 (shown in FIG. 12). The conversion module 78 may control the swing unit 8 such that at least one of the swing distance SWD and the waiting time is converted according to the conversion condition. Since the conversion module 78 is the same as described in the sputtering apparatus 1 according to the present invention described above, a detailed description thereof will be omitted.

Hereinafter, an embodiment of a sputtering apparatus control method according to the present invention will be described in detail with reference to the accompanying drawings.

1 to 13, a method of controlling a sputtering device according to the present invention is to control a sputtering device that performs a sputtering process on a substrate 100 for manufacturing a display device, a solar cell, and a semiconductor device. The sputtering device 1 according to the present invention described above can be controlled by the sputtering device control method according to the present invention, thereby performing the sputtering process on the substrate 100.

The sputtering apparatus control method according to the present invention may include an acquisition step (S10), an extraction step (S20), and an adjustment step (S30).

The obtaining step S10 may be performed by acquiring the central plasma values, the upper plasma values, and the lower plasma values. The central plasma values may be obtained by the central acquisition mechanisms 41. The upper plasma values may be obtained by the upper acquisition mechanisms 42. The lower plasma values may be obtained by the lower acquisition mechanisms 43.

The extraction step S20 may be performed by extracting the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value. The maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value may be respectively extracted by the extraction module 71.

The adjusting step S30 may be performed by adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value. The adjusting step (S30) may be performed by the moving part 6 moving the magnet part 5 based on the maximum central plasma value.

Accordingly, the sputtering device control method according to the present invention can achieve the following operational effects.

First, in the sputtering apparatus control method according to the present invention, the central plasma values, the upper plasma values, and the lower plasma values are adjusted through the adjustment step (S30) by using the plasma values obtained through the acquisition step (S10). It can be implemented to adjust at least one of the values. Accordingly, the sputtering apparatus control method according to the present invention is a process that is changed, even if the environmental conditions in the chamber, such as process conditions such as erosion of the target 3, process gas pressure, etc. during the sputtering process is changed At least one of the central plasma values, the upper plasma values, and the lower plasma values may be adjusted to correspond to conditions, environmental conditions, and the like. Therefore, the sputtering apparatus control method according to the present invention can improve the efficiency of the sputtering process by improving the ability to respond to changing process conditions and environmental conditions due to various factors during the sputtering process.

Second, the sputtering device control method according to the present invention, by adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values through the adjustment step (S30), to the target (3) The difference in the degree of erosion in part can be reduced. Accordingly, the sputtering apparatus control method according to the present invention can extend the usage life of the target 3 by increasing the total usage of the target 3. Therefore, the sputtering device control method according to the present invention can contribute to reducing the process cost for the sputtering process. In addition, the sputtering apparatus control method according to the present invention can contribute to increasing the replacement cycle of the target 3 by extending the service life of the target 3. Therefore, the sputtering apparatus control method according to the present invention can reduce the time required to stop the entire process due to the replacement of the target 3, and thus contribute to increase the productivity of the substrate on which the sputtering process is completed by increasing the utilization rate. .

Third, in the sputtering device control method according to the present invention, at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value through the adjustment step (S30). It is implemented to regulate. In general, more erosion occurs in the upper target surface 312 and the lower target surface 313 than in the central target surface 311, so that the upper area UA and the lower area DA are It is considered that the intensity of the plasma is stronger than the central region CA. Accordingly, the sputtering device control method according to the present invention can reduce the deviation between the erosion occurring in each of the upper target surface 312, the lower target surface 313, and the central target surface 311, the The effect of increasing the total amount of use of the target 3 and the effect of extending the life of the target 3 can be further improved. In addition, the sputtering apparatus control method according to the present invention may contribute to improving the quality of the substrate 100 on which the sputtering process is completed. For example, when the sputtering process is a deposition process, the sputtering device control method according to the present invention may contribute to improving the uniformity of thickness and film quality for the thin film deposited on the substrate 100.

Here, the sputtering device control method according to the present invention may be implemented such that the acquisition step (S10) is performed in real time. The acquiring step (S10) may be performed by acquiring each of the central plasma values, the upper plasma values, and the lower plasma values in real time.

When the acquiring step (S10) acquires each of the central plasma values, the upper plasma values, and the lower plasma values in real time, the extraction step (S20) is the maximum central plasma value in real time, the maximum It can be achieved by extracting the upper plasma value and the maximum lower plasma value. In this case, the adjusting step (S30) may be made by adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value in real time. Accordingly, in the sputtering apparatus control method according to the present invention, the central plasma values, the upper plasma values, and the lower plasma values fluctuate in real time due to erosion as the sputtering process proceeds, in real time. Accordingly, at least one of the central plasma values, the upper plasma values, and the lower plasma values may be adjusted based on the maximum central plasma value. Accordingly, the sputtering apparatus control method according to the present invention can further increase the total amount of use of the target 3 and further improve the uniformity of thickness and film quality for the thin film deposited on the substrate 100.

When the acquiring step (S10) acquires each of the central plasma values, the upper plasma values, and the lower plasma values in real time, the extraction step (S20) is the unit time interval or the accumulated power amount interval It may be achieved by extracting the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value. In this case, the adjusting step (S30) is at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value at the unit time interval or the accumulated power amount interval. It can be achieved by adjusting. Accordingly, the sputtering device control method according to the present invention is implemented to extract the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value at the unit time interval or the accumulated power amount interval, so that the maximum central plasma As the value fluctuates frequently, the moving part 6 frequently moves the magnet part 5 to prevent frequent failures and the like. Therefore, the sputtering device control method according to the present invention can not only reduce the repair cost due to a failure, but also increase the operation rate by reducing the frequency of operation stoppage for repair. In addition, in the sputtering device control method according to the present invention, as the maximum central plasma value frequently changes, the moving part 6 frequently moves the magnet part 5 to prevent the stability of the plasma from deteriorating, Stability for the sputtering process may be improved.

1 to 7, and 14, the adjustment step (S30) may include a comparison step (S31), a derivation step (S32), and a moving step (S33).

The comparison step S31 may be performed by comparing the maximum upper plasma value with the maximum lower plasma value to derive the upper value, and determining whether the upper value and the maximum central plasma value match. The upper value may be derived by the comparison module 72. The determination of whether the upper value matches the maximum central plasma value may be performed by the comparison module 72. In the comparison step S31, when the upper limit value and the maximum central plasma value completely match, it may be determined that the upper limit value and the maximum central plasma value match. According to the modified embodiment, in the comparison step S31, if the difference between the upper value and the maximum central plasma value is within the reference range, the upper value and the maximum central plasma value may be determined to match. . When it is determined in step S31 that the upper value and the maximum central plasma value match, the obtaining step S10 may be performed. In this case, the acquiring step S10 may be performed by reacquiring the central plasma values, the upper plasma values, and the lower plasma values.

The derivation step (S32) may be performed by deriving a reference region corresponding to the upper value when it is determined that the upper value and the maximum central plasma value are different in the comparison step (S31). The reference area may be derived by the derivation module 73.

The moving step S33 may be performed by moving all of the magnet modules 51 along the first axis direction (X-axis direction) so that the intensity of the plasma with respect to the reference area matches the maximum central plasma value. have. The moving step S33 may be performed by the moving unit 6. The moving part 6 moves all of the magnet modules 51 in the first axial direction (X) so that the intensity of the plasma for the reference area coincides with the maximum central plasma value under the control of the control part 7. Axial direction). The moving step (S33) may be performed by moving all of the magnet modules (51) under the control of the control module (74).

Accordingly, the sputtering apparatus control method according to the present invention can reduce the degree of erosion occurring in a portion of the target surface 31 corresponding to the reference region by reducing the intensity of the plasma with respect to the reference region. Therefore, the sputtering apparatus control method according to the present invention can further increase the amount of use of a portion of the target surface 31 corresponding to the reference area. Since all of the magnet modules 51 are moved along the first axial direction (X-axis direction) through the moving step S33, the central plasma values, the upper plasma values, and the lower plasma values Everything can be adjusted.

The adjustment step (S30) may include a redo step (S34).

The re-execution step (S34) may be performed by re-executing from the acquisition step (S10) after performing the moving step (S33). After performing the acquisition step (S10), the extraction step (S20), and the comparison step (S31) according to the redo step (S34), the acquisition according to the determination result in the comparison step (S31) Step S10 or the derivation step S32 may be performed.

1 to 7, 7, and 15, the sputtering apparatus control method according to the present invention may include a switching step (S40), and a stop step (S50).

The switching step S40 may be performed by determining whether the maximum central plasma value exceeds the switching value. The conversion step (S40) may be performed after the extraction step (S20) is performed. The switching step S40 may be performed before the adjusting step S30 is performed. The conversion step (S40) may be performed by the conversion module 76. When it is determined in the switching step (S40) that the maximum central plasma value is less than or equal to the switching value, the adjusting step (S30) may be performed.

In the stopping step (S50), when it is determined in the switching step (S40) that the maximum central plasma value exceeds the switching value, the first axis direction (X-axis direction) for all of the magnet modules 51 ). The stopping step S50 may be performed by the control module 74. The control module 74 may control the integral movement mechanism 61 so that movement in the first axis direction (X axis direction) to all of the magnet modules 51 is stopped. Accordingly, the sputtering process may be performed in a state in which the movement of the magnet modules 51 in the first axis direction (X-axis direction) is stopped. Accordingly, the sputtering device control method according to the present invention is to change the control method for the magnet modules 51 even when the sputtering process is performed to the extent that it belongs to the end of the life cycle of the target 3. ) Can further increase the total usage. In addition, the sputtering device control method according to the present invention can improve the uniformity of the thickness and film quality for the thin film deposited on the substrate 100 by changing the control method for the magnet modules 51.

Hereinafter, embodiments of the sputtering apparatus control method according to the modified embodiment of the present invention will be described in detail with reference to the accompanying drawings.

8 to 12, and 16, a sputtering apparatus control method according to a modified embodiment of the present invention performs a sputtering process on a substrate 100 for manufacturing a display device, a solar cell, a semiconductor device, etc. It is to control the sputtering device. The sputtering device 1 according to the above-described modified embodiment of the present invention is controlled by the sputtering device control method according to the modified embodiment of the present invention, so that the sputtering process can be performed on the substrate 100. . The sputtering apparatus control method according to the modified embodiment of the present invention may include the obtaining step (S10), the extraction step (S20), and the adjusting step (S30).

Since the acquiring step (S10) and the extracting step (S20) are roughly identical to those described in the above-described method for controlling a sputtering apparatus according to the present invention, detailed descriptions thereof will be omitted.

The adjusting step S30 may be performed by adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value. The adjusting step (S30) may be performed by the moving part 6 moving the magnet part 5 based on the maximum central plasma value.

The adjustment step (S30) may include the comparison step (S31), the derivation step (S32), and the moving step (S33).

The comparison step S31 may be performed by determining whether each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value. The comparison step S31 may be performed by the comparison module 72. When it is determined in step S31 that each of the maximum upper plasma value and the maximum lower plasma value coincides with the maximum central plasma value, the obtaining step S10 may be performed. In this case, the acquiring step S10 may be performed by reacquiring the central plasma values, the upper plasma values, and the lower plasma values.

In the comparison step S31, when the maximum upper plasma value and the maximum central plasma value completely match, it may be determined that the maximum upper plasma value and the maximum central plasma value match. According to a modified embodiment, in the comparison step (S31), if the difference between the maximum upper plasma value and the maximum central plasma value is within the reference range, the maximum upper plasma value and the maximum central plasma value coincide. You can also judge.

In the comparison step S31, when the maximum lower plasma value and the maximum central plasma value completely match, it may be determined that the maximum lower plasma value and the maximum central plasma value match. According to the modified embodiment, in the comparison step (S31), if the difference between the maximum lower plasma value and the maximum central plasma value is within the reference range, the maximum lower plasma value and the maximum central plasma value coincide. You can also judge.

The derivation step (S32) may be performed by deriving an upper reference region corresponding to the maximum upper plasma value when it is determined that the maximum upper plasma value and the maximum central plasma value are different in the comparison step (S31). The derivation step S32 may be performed by deriving a lower reference region corresponding to the maximum lower plasma value when it is determined that the maximum lower plasma value and the maximum central plasma value are different in the comparison step S31. The upper reference area and the lower reference area may be respectively derived by the derivation module 73.

The moving step S33 is performed by moving all of the upper magnets 512 along the first axis direction (X-axis direction) so that the intensity of the plasma with respect to the upper reference area matches the maximum central plasma value. Can be. Accordingly, the sputtering apparatus control method according to the present invention can reduce the degree of erosion occurring in the portion of the target surface 31 corresponding to the upper reference region by reducing the intensity of the plasma with respect to the upper reference region. . Accordingly, the sputtering apparatus control method according to the present invention can further increase the amount of use of the portion of the target surface 31 corresponding to the upper reference area. All of the upper magnets 512 may be moved by the upper moving mechanism 63. The upper moving mechanism 63 may move all of the upper magnets 512 along the first axis direction (X-axis direction) under the control of the control module 74. Meanwhile, in the moving step (S33), all of the upper magnets 512 are stopped in the state in which the movement of the central magnets 511 in the first axial direction (X-axis direction) is stopped. It can also be made by moving along the direction (X-axis direction).

The moving step S33 is performed by moving all of the lower magnets 513 along the first axis direction (X-axis direction) so that the intensity of the plasma with respect to the lower reference area coincides with the maximum central plasma value. Can be. Accordingly, the sputtering apparatus control method according to the present invention can reduce the degree of erosion occurring in a portion of the target surface 31 corresponding to the lower reference region by reducing the intensity of the plasma with respect to the lower reference region. . Therefore, the sputtering apparatus control method according to the present invention can further increase the amount of use of the portion of the target surface 31 corresponding to the lower reference area. All of the lower magnets 513 may be moved by the lower moving mechanism 64. The lower moving mechanism 64 may move all of the lower magnets 513 along the first axial direction (X-axis direction) under the control of the control module 74. Meanwhile, in the moving step (S33), all of the lower magnets 513 are stopped in the state in which the movement of the central magnets 511 in the first axis direction (X-axis direction) is stopped. It can also be made by moving along the direction (X-axis direction).

The adjustment step (S30) may include the redo step (S34).

The re-execution step (S34) may be performed by re-executing from the acquisition step (S10) after performing the moving step (S33). After performing the acquisition step (S10), the extraction step (S20), and the comparison step (S31) according to the redo step (S34), the acquisition according to the determination result in the comparison step (S31) Step S10 or the derivation step S32 may be performed.

8 to 12, and 17, the sputtering apparatus control method according to the modified embodiment of the present invention is the switching step (S40), the first moving step (S60), and the second moving step (S70) It may include.

The switching step S40 may be performed by determining whether the maximum central plasma value exceeds the switching value. The conversion step (S40) may be performed after the extraction step (S20) is performed. The switching step S40 may be performed before the adjusting step S30 is performed. The conversion step (S40) may be performed by the conversion module 76. When it is determined in the switching step (S40) that the maximum central plasma value is less than or equal to the switching value, the adjusting step (S30) may be performed.

In the first moving step (S60), when it is determined in the switching step (S40) that the maximum central plasma value exceeds the switching value, all of the magnet modules 51 are rotated in the first axis direction (X-axis). Direction). In the first moving step (S60), the central magnets 511, the upper magnets 512, and the lower magnets 513 are the first axis so that the maximum central plasma value becomes the first set value. It can also be achieved by moving together along the direction (X-axis direction).

In the first moving step (S60), the central moving mechanism 62, the upper moving mechanism 63, and the lower moving mechanism 64 are the central magnets 511, the upper magnets 512, And moving all of the lower magnets 513 along the first axial direction (X-axis direction). The central moving mechanism 62, the upper moving mechanism 63, and the lower moving mechanism 64 are controlled by the control module 74, the central magnets 511, the upper magnets 512 , And all of the lower magnets 513 may be moved along the first axis direction (X-axis direction). In the first movement step (S60), the integral movement mechanism 61 moves the central movement mechanism 62, the upper movement mechanism 63, and the lower movement mechanism 64 in the first axis direction (X axis). Direction). The integral movement mechanism 61 controls the central movement mechanism 62, the upper movement mechanism 63, and the lower movement mechanism 64 under the control of the control module 74 in the first axial direction (X Axial direction).

The second movement step (S70) moves the first magnet direction (X-axis direction) to the upper magnets 512 and the lower magnets 513 after the first movement step S60. It can be made by stopping and moving only the central magnets 511 along the first axis direction (X axis direction). The second moving step (S70) may be performed by additionally moving only the central magnets 511 along the first axis direction (X-axis direction) so that the maximum central plasma value becomes the second set value.

In the second moving step (S70), the first moving direction (X axis) of the upper moving mechanism 63 and the lower moving mechanism 64 with respect to the upper magnets 512 and the lower magnets 513 Direction), the central movement mechanism 62 may be made by moving all of the central magnets 511 along the first axial direction (X-axis direction). The upper movement mechanism 63 and the lower movement mechanism 64 are in the first axial direction (X) with respect to the upper magnets 512 and the lower magnets 513 under the control of the control module 74. The movement in the axial direction is stopped, and the central movement mechanism 62 moves all of the central magnets 511 along the first axial direction (X-axis direction) under the control of the control module 74. I can do it.

The sputtering apparatus control method according to the modified embodiment of the present invention is replaced in the switching step (S40) as shown in FIG. 15, instead of the first moving step (S60) and the second moving step (S70) If it is determined that the maximum central plasma value exceeds the switching value, the stop step (S50) may be implemented. The stopping step (S50) by stopping the movement in the first axis direction (X-axis direction) for all of the center magnets 511, the upper magnets 512, and the lower magnets 513 It can be done.

As described above, the sputtering device control method according to the modified embodiment of the present invention, even if the sputtering process is performed to the extent that it belongs to the end of the life cycle of the target 3, the central magnets 511, the upper By changing the control method for the magnets 512 and the lower magnets 513, the total amount of the target 3 can be further increased. In addition, the sputtering apparatus control method according to the modified embodiment of the present invention is the substrate through the control method for the central magnet (511), the upper magnet (512), and the lower magnet (513) ( It is possible to improve the uniformity of the thickness and film quality for the thin film deposited on 100).

1 to 12, and 18, in the sputtering control method according to the present invention and the sputtering apparatus control method according to a modified embodiment of the present invention, the adjustment step (S30) is a change step (S35, FIG. 18).

In the changing step (S35), the swing distance (SWD, shown in FIG. 7) and the magnet modules 51 are swinging relative to the target 3 at the both ends of the swing path. It can be achieved by changing at least one of the waiting times to wait. The change step (S35) may be performed by the change module 77. The change step (S35) may be performed by the control module 74 or the conversion module 78.

In the changing step (S35), by changing the swing distance (SWD), it is possible to increase the total amount of use for the target (3). For example, the changing step (S35) may increase the swing distance (SWD) to increase the area of the portion where erosion occurs in the target (3), thus increasing the area where the target (3) is used to increase the target ( It is possible to increase the total usage for 3). In the changing step (S35), the total amount of use of the target 3 may be increased by changing the waiting time. For example, the change step (S35) may increase the amount of erosion occurring at both ends of the target 3 by increasing the waiting time, thereby increasing the amount of use of both ends of the target 3. The changing step S35 may be performed by changing both the swing distance SWD and the waiting time.

The changing step (S35) and the moving step (S33) may be performed in parallel. Accordingly, the changing step (S35) and the moving step (S33) further improves the response power to the changing process conditions, environmental conditions, etc. due to various factors during the sputtering process, thereby further improving the efficiency of the sputtering process. It can contribute to improvement. Although not shown, the changing step (S35) may be performed after the moving step (S33) is performed. The changing step (S35) may be performed before the moving step (S33) is performed. After the adjusting step (S30) including the changing step (S35) and the moving step (S33) is performed, it may be performed again from the obtaining step (S10).

The changing step S35 may be performed by changing at least one of the swing distance SWD and the dash period according to the changing condition. In this case, as shown in FIG. 18, the change step (S35) may include a change start step (S351), a change progress step (S352), and a change stop step (S353).

The change start step (S351) may be made by starting to change at least one of the swing distance (SWD) and the waiting time when the maximum central plasma value or the accumulated power amount is greater than or equal to the change start value. Accordingly, even if the magnet part 5 is moved along the first axis direction (X axis direction) through the moving step S33, the change starting step S351 is the maximum central plasma value or the accumulated power amount. If it is less than the change start value, the swing distance SWD and the waiting time can be maintained without changing. In this case, the magnet modules 51 may swing according to a preset swing distance (SWD) and a waiting time before the maximum central plasma value or the accumulated power amount exceeds the change start value.

The change progress step (S352) may be achieved by changing at least one of the swing distance (SWD) and the waiting time in conjunction with the movement step (S33). The change progress step (S352) may be performed after the change start step (S351). Accordingly, if the change in the at least one of the swing distance SWD and the waiting time does not start because the maximum central plasma value or the total power is less than the change start value in the change start step S351, the change proceeds Step S352 is not performed. If at least one of the swing distance SWD and the waiting time is started because the maximum central plasma value or the accumulated power amount is greater than or equal to the change start value in the change start step S351, the change progress step S352. Can be performed.

The change stop step (S353) may be performed by stopping the change of at least one of the swing distance (SWD) and the waiting time when the maximum central plasma value or the accumulated power amount is equal to or greater than the change stop value. Accordingly, even if the magnet part 5 is moved along the first axis direction (X-axis direction) through the movement step S33, the change stop step (S353) is the maximum central plasma value or the accumulated power amount. If the change stop value is greater than or equal to, the swing distance SWD and the waiting time can be maintained without changing. In this case, the magnet modules 51 may swing according to the last changed swing distance (SWD) and waiting time immediately before the maximum central plasma value or the accumulated power amount becomes equal to or greater than the change stop value. The change stop step (S353) may be performed after the change progress step (S352).

1 to 12, and 19, the sputtering control method according to the present invention and the sputtering device control method according to a modified embodiment of the present invention include a conversion step (S80, shown in FIG. 19) Can be.

The converting step S80 may be performed by converting at least one of the swing distance SWD and the waiting time. The conversion step (S80) may be performed by the conversion module 78. The conversion step (S80) may be performed by the control module 74. The conversion step (S80) may be performed after the extraction step (S20) is performed. The conversion step S80 may be performed before the adjustment step S30 is performed. Accordingly, the adjustment step (S30) is performed after the conversion step (S80) is performed, and can be performed again from the acquiring step (S10) after the adjustment step (S30) is performed.

The conversion step S80 may be performed by converting at least one of the swing distance SWD and the waiting time according to the conversion condition. The conversion step (S80) determines whether the conversion condition is satisfied by using the values extracted through the extraction step (S20), and at least one of the swing distance (SWD) and the waiting time according to the determination result. It can be achieved by converting. Accordingly, the sputtering device control method according to the present invention is implemented to convert at least one of the swing distance (SWD) and the waiting time according to the conversion conditions, and process conditions changing due to various factors during the sputtering process , By further improving the response to environmental conditions, the efficiency of the sputtering process can be further improved.

In the converting step (S80), when the difference between the maximum central plasma value and the maximum upper plasma value exceeds the reference value, and the difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value, If it corresponds to any one, it may be achieved by converting at least one of the swing distance (SWD) and the waiting time.

For example, when the difference between the maximum central plasma value and the maximum upper plasma value exceeds the reference value, the converting step S80 may be performed by increasing at least one of the swing distance SWD and the waiting time. When the difference between the maximum central plasma value and the maximum upper plasma value is less than or equal to the reference value, the conversion step (S80) may be achieved by maintaining the swing distance (SWD) and the waiting time without conversion.

For example, when the difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value, the conversion step (S80) may be achieved by increasing at least one of the swing distance (SWD) and the waiting time. . When the difference between the maximum central plasma value and the maximum lower plasma value is less than or equal to the reference value, the converting step S80 may be performed by maintaining the swing distance SWD and the waiting time without being converted.

The converting step (S80) may be performed by converting at least one of the swing distance (SWD) and the waiting time using the maximum central plasma value or the accumulated power amount as a conversion condition. In this case, as shown in FIG. 19, the conversion step (S80) may include a conversion start step (S81), a conversion progress step (S82), and a conversion stop step (S83).

The conversion start step (S81) may be performed by starting conversion of at least one of the swing distance (SWD) and the waiting time when the maximum central plasma value or the accumulated power amount is greater than or equal to the conversion start value. Accordingly, if the maximum central plasma value or the accumulated power amount is less than the conversion start value, the conversion start step S81 may maintain the swing distance SWD and the waiting time without conversion. In this case, the magnet modules 51 may swing according to a preset swing distance (SWD) and a waiting time before the maximum central plasma value or the accumulated power amount exceeds the change start value.

The conversion progress step S82 may be performed by converting at least one of the swing distance SWD and the waiting time whenever the conversion interval value is greater than or equal to the conversion start value. For example, the conversion progress step (S82) is made by converting at least one of the swing distance (SWD) and the waiting time whenever the maximum central plasma value or the accumulated power amount increases by 20 based on the conversion start value. Can be. The conversion proceeding step (S82) may be performed after the conversion starting step (S81). Accordingly, if the conversion to at least one of the swing distance (SWD) and the waiting time does not start because the maximum central plasma value or the total power is less than the conversion start value in the conversion start step (S81), the conversion proceeds Step S82 is not performed. In this case, the swing for the magnet modules 51 is not converted through the conversion step S80, and the adjustment step S30 may be performed. If at least one of the swing distance SWD and the waiting time is started because the maximum central plasma value or the accumulated power amount is greater than or equal to the conversion start value in the conversion start step S81, the conversion proceeding step S82. Can be performed.

The conversion stop step (S83) may be performed by stopping conversion of at least one of the swing distance (SWD) and the waiting time when the maximum central plasma value or the accumulated power amount is greater than or equal to the conversion stop value. When conversion of at least one of the swing distance SWD and the waiting time is stopped, the magnet modules 51 swing last converted immediately before the maximum central plasma value or the accumulated power amount becomes equal to or greater than the conversion stop value. It can swing according to the distance (SWD) and waiting time. The conversion stop step (S83) may be performed after the conversion progress step (S82).

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which the present invention pertains that various substitutions, modifications and changes are possible without departing from the spirit of the present invention. It will be clear to those who have the knowledge of

1: Sputtering device 2: Support part
3: Target 4: Acquisition unit
5: magnet part 6: mobile part
7: control unit 8: swing unit

Claims (27)

A method of controlling a sputtering device performing a sputtering process using plasma generated between a substrate and a target based on a first axial direction,
The plasma intensity is measured for each of the central regions arranged along the second axis direction perpendicular to the first axis direction to obtain central plasma values, and for each of the first axis direction and the second axis direction. Plasma intensity is measured for each of the upper regions disposed above the central regions based on the vertical direction, and upper plasma values are obtained, and the lower region disposed below the central regions based on the vertical direction. An acquisition step of acquiring lower plasma values by measuring the intensity of the plasma for each of them;
An extraction step of extracting a maximum central plasma value from the central plasma values, extracting a maximum upper plasma value from the upper plasma values, and extracting a maximum lower plasma value from the lower plasma values; And
And adjusting at least one of the central plasma values, the upper plasma values, and the lower plasma values based on the maximum central plasma value. The method of claim 1, wherein the adjusting step
A comparison step of comparing the maximum upper plasma value and the maximum lower plasma value to derive a larger upper value, and determining whether the upper value and the maximum central plasma value match;
A derivation step of deriving a reference area corresponding to the upper value when it is determined that the upper value and the maximum central plasma value are different in the comparison step; And
And a moving step of moving all of the plurality of magnet modules arranged along the second axis direction along the first axis direction so that the intensity of the plasma with respect to the reference area coincides with the maximum central plasma value. How to control the sputtering device. According to claim 2,
In the comparing step, if the difference between the upper value and the maximum central plasma value is within a preset reference range, it is determined that the upper value and the maximum central plasma value match,
In the obtaining step, when it is determined that the upper limit value and the maximum central plasma value coincide in the comparison step, sputtering characterized by reacquiring the central plasma values, the upper plasma values, and the lower plasma values. Device control method. According to claim 1,
The acquiring step acquires each of the central plasma values, the upper plasma values, and the lower plasma values in real time,
The extraction step is a sputtering apparatus characterized by extracting the maximum central plasma value, the maximum upper plasma value, and the maximum lower plasma value according to any one of a real time, a predetermined unit time interval, and a preset accumulated power amount interval. Control method. According to claim 1,
After the extraction step, a conversion step of determining whether the maximum central plasma value exceeds a predetermined conversion value,
The adjusting step is performed when the maximum central plasma value is determined to be less than or equal to the switching value in the switching step. According to claim 1,
A switching step of determining whether the maximum central plasma value exceeds a preset switching value after the extraction step; And
In the switching step, when it is determined that the maximum central plasma value exceeds the switching value, a stopping step of stopping the movement of the plurality of magnet modules disposed along the second axis direction in the first axis direction. The sputtering device control method comprising a. According to claim 1,
A switching step of determining whether the maximum central plasma value exceeds a preset switching value after the extraction step;
A first moving step of moving all of the plurality of magnet modules disposed along the second axis direction along the first axis direction when it is determined in the switching step that the maximum central plasma value exceeds the switching value; And
After the first movement step, the movement of the upper and lower magnets of the magnet modules is stopped in the first axis direction, and only the central magnets of the magnet modules are added along the first axis direction. And a second moving step of moving to the sputtering device control method. The method of claim 1, wherein the adjusting step
A comparison step of determining whether each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value;
When it is determined that the maximum upper plasma value and the maximum central plasma value are different in the comparison step, an upper reference region corresponding to the maximum upper plasma value is derived, and the maximum lower plasma value and the maximum central plasma value are compared in the comparison step. A derivation step of deriving a lower reference region corresponding to the maximum lower plasma value when it is determined that this is different; And
The upper magnets of the plurality of magnet modules arranged along the second axis direction are moved along the first axis direction so that the intensity of the plasma with respect to the upper reference area coincides with the maximum central plasma value. And a moving step of moving all of the lower magnets of the magnet modules along the first axial direction so that the intensity of the plasma with respect to the lower reference region matches the maximum central plasma value. . The method of claim 8,
The moving step moves at least one of the upper magnets and the lower magnets along the first axial direction in a state in which the movement of the central magnets of the magnet modules in the first axial direction is stopped. Characterized in that the sputtering device control method. The method of claim 8,
In the comparing step, if the difference between the maximum upper plasma value and the maximum central plasma value is within a preset reference range, it is determined that the maximum upper plasma value and the maximum central plasma value match, and the maximum lower plasma value and the maximum If the difference between the central plasma values is within the reference range, it is determined that the maximum lower plasma value and the maximum central plasma value coincide,
In the acquiring step, when it is determined that each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value in the comparison step, the central plasma values, the upper plasma values, and the lower plasma value The sputtering device control method, characterized in that to reacquire them. The method of claim 2 or 8,
The adjusting step comprises a re-performing step of performing the re-performing from the acquiring step after performing the moving step. The method of claim 2 or 8,
The adjusting step includes a changing step of adjusting at least one of a swing distance that the magnet modules swing relative to the target and a waiting time that the magnet modules wait at both ends of the swing path,
The changing step and the moving step is a sputtering device control method, characterized in that made in parallel. The method of claim 2 or 8,
The adjusting step includes a changing step of changing at least one of a swing distance that the magnet modules swing relative to the target and a waiting time that the magnet modules wait at both ends of the swing path,
In the changing step, if the maximum central plasma value or the accumulated power amount is equal to or greater than a preset change start value, the change start step starts to change at least one of the swing distance and the waiting time. In the interlocking step of changing at least one of the swing distance and the standby time in interlocking, and if the maximum central plasma value or the accumulated power amount after the change progress step is greater than or equal to a preset change stop value, the swing distance and the standby time And stopping a change to at least one of the changes. According to claim 1,
After the extraction step, at least one of a swing distance in which a plurality of magnet modules arranged along the second axis direction swing relative to the target and a waiting time in which the magnet modules wait at both ends of the swing path. The sputtering device control method comprising a conversion step of converting. The method of claim 14,
In the converting step, any one of a case in which the difference between the maximum central plasma value and the maximum upper plasma value exceeds a preset reference value and a difference between the maximum central plasma value and the maximum lower plasma value exceeds the reference value If applicable, the sputtering device control method characterized in that for converting at least one of the swing distance and the waiting time. 15. The method of claim 14, The conversion step
A conversion start step of starting conversion for at least one of the swing distance and the waiting time when the maximum central plasma value or the accumulated power amount is greater than a preset conversion start value;
A conversion process that converts at least one of the swing distance and the waiting time whenever the maximum central plasma value or the accumulated power amount exceeds the preset conversion interval value based on the conversion start value after the conversion start step. step; And
And a sputtering step of stopping conversion of at least one of the swing distance and the waiting time when the maximum central plasma value or the accumulated power amount is greater than or equal to a preset conversion stop value after the conversion progress step. Control method. A support for supporting the substrate;
A target spaced apart from the support along the first axial direction;
An acquiring unit for acquiring a plasma value by measuring the intensity of the plasma generated between the substrate supported by the support unit and the target based on the first axial direction;
A magnet unit for adjusting the intensity of the plasma; And
And a moving part moving the magnet part along the first axial direction,
The acquiring unit measures a plasma intensity for each of the central regions arranged along the second axial direction perpendicular to the first axial direction to obtain central plasma values, and the first axial direction A plurality of upper acquisition mechanisms for acquiring upper plasma values by measuring the intensity of plasma for each of the upper regions disposed above the central regions based on the vertical direction perpendicular to each of the second axial directions, and the upper and lower portions It includes a plurality of lower acquisition mechanism for acquiring lower plasma values by measuring the intensity of the plasma for each of the lower regions disposed under the center region based on the direction,
The moving part moves the magnet part in the first axis direction so that at least one of the central plasma values, the upper plasma values, and the lower plasma values is adjusted based on the maximum central plasma value among the central plasma values. Sputtering device characterized in that to move along. The method of claim 17,
The magnet portion includes a plurality of magnet modules arranged along the second axis direction,
The sputtering device, characterized in that the moving part includes an integral moving mechanism for moving all of the magnet modules along the first axis direction. The method of claim 18,
An extraction module for extracting the maximum central plasma value from the central plasma values, extracting the maximum upper plasma value from the upper plasma values, and extracting the maximum lower plasma value from the lower plasma values;
A comparison module that compares the maximum upper plasma value and the maximum lower plasma value to derive a larger upper value, and then determines whether the upper value and the maximum central plasma value match;
A derivation module for deriving a reference area corresponding to the upper value when it is determined that the upper value and the maximum central plasma value are different; And
And a control module that controls the integral moving mechanism such that the intensity of the plasma with respect to the reference area matches the maximum central plasma value. The method of claim 17,
The magnet portion includes a plurality of magnet modules arranged along the second axis direction,
The magnet modules include central magnets for adjusting the central plasma values, upper magnets for adjusting the upper plasma values, and lower magnets for adjusting the lower plasma values,
The moving unit moves the central magnets to move all of the central magnets together along the first axis direction, the upper moving mechanism to move all of the upper magnets together along the first axis direction, and all of the lower magnets. And a lower moving mechanism moving together along the first axial direction. The method of claim 20,
The moving part includes a sputtering device, characterized in that it comprises an integral moving mechanism for moving all of the central magnets, the upper magnets, and the lower magnets along the first axial direction. The method of claim 20,
An extraction module for extracting the maximum central plasma value from the central plasma values, extracting the maximum upper plasma value from the upper plasma values, and extracting the maximum lower plasma value from the lower plasma values;
A comparison module that determines whether each of the maximum upper plasma value and the maximum lower plasma value matches the maximum central plasma value;
When it is determined that the maximum upper plasma value and the maximum central plasma value are different, an upper reference region corresponding to the maximum upper plasma value is derived, and when it is determined that the maximum lower plasma value and the maximum central plasma value are different, the maximum lower portion A derivation module for deriving a lower reference region corresponding to the plasma value; And
The upper moving mechanism is controlled so that the intensity of the plasma with respect to the upper reference region coincides with the maximum central plasma value while the movement in the first axial direction to all of the central magnets is stopped. And a control module for controlling the lower moving mechanism such that the intensity of the plasma with respect to the lower reference region coincides with the maximum central plasma value while the movement in the first axial direction to all of them is stopped. Sputtering device made with. The method of claim 17,
A switching module that determines whether the maximum central plasma value exceeds a preset switching value; And
And a control module for controlling the moving part so that movement in the first axis direction to the magnet part is stopped when it is determined that the maximum central plasma value exceeds the switching value. The method of claim 17,
It includes a switching module for determining whether the maximum central plasma value exceeds a predetermined switching value, and a control module for controlling the moving unit,
The magnet portion includes a plurality of magnet modules arranged along the second axis direction,
The magnet modules include central magnets for adjusting the central plasma values, upper magnets for adjusting the upper plasma values, and lower magnets for adjusting the lower plasma values.
When the control module determines that the maximum central plasma value exceeds the switching value, only the central magnets after the central magnets, the upper magnets, and the lower magnets move together along the first axis direction. And a control module that controls the moving part to further move along the first axial direction. The method of claim 17,
It includes a swing portion for swinging the magnet portion relative to the target (Swing),
The magnet portion includes a plurality of magnet modules arranged along the second axis direction,
The sputtering device is characterized in that the swing unit controls at least one of the swing distance that the magnet modules swing relative to the target and the waiting time that the magnet modules wait at both ends of the swing path. The method of claim 25,
An extraction module for extracting the maximum central plasma value from the central plasma values, extracting the maximum upper plasma value from the upper plasma values, and extracting the maximum lower plasma value from the lower plasma values; And
At least one of a swing distance that the magnet modules swing relative to the target and a waiting time that the magnet modules wait at both ends of the swing path according to a preset change condition using the values extracted by the extraction module. Sputtering device comprising a change module for controlling the swing portion to change. The method of claim 25,
An extraction module for extracting the maximum central plasma value from the central plasma values, extracting the maximum upper plasma value from the upper plasma values, and extracting the maximum lower plasma value from the lower plasma values; And
At least one of the swing distance that the magnet modules swing relative to the target and the waiting time that the magnet modules wait at both ends of the swing path according to a preset conversion condition using the values extracted by the extraction module. Sputtering device comprising a conversion module for controlling the swing portion to convert.

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