CN201218899Y - Lifting pin used for plasma reaction chamber - Google Patents
Lifting pin used for plasma reaction chamber Download PDFInfo
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- CN201218899Y CN201218899Y CN 200720181419 CN200720181419U CN201218899Y CN 201218899 Y CN201218899 Y CN 201218899Y CN 200720181419 CN200720181419 CN 200720181419 CN 200720181419 U CN200720181419 U CN 200720181419U CN 201218899 Y CN201218899 Y CN 201218899Y
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Abstract
The utility model describes a lift pin for etching work pieces, which is used for plasma reactor. In one embodiment, the lift pin comprises a longitudinal body having a ring shaped section, the body including a first and a second end in circular shape; and a concave region formed in the second end, which is suitable for being detachably connected the lift pin disposed in the plasma chamber, wherein the body includes a first diameter region and the concave region comprising at least two diagonal regions having relatively smaller diameter separated by a lateral wing.
Description
Technical field
Process the making of the photo etched mask of ultra-large integrated (ULSI) semiconductor wafer use, require the etching uniformity coefficient of more increasing than semiconductor wafer processing.On quartz mask, single mask pattern occupies 4 inches square areas usually.The image focusing of mask pattern to the wafer single mold (an inch square) zone and cross wafer then, for each mould forms single image.Before the mask pattern etching is become quartz mask, by scanning beam this mask pattern is write photoresist, processing consuming time makes the mask expense very high.Mask etch process across mask surface is uneven.And it itself is heterogeneous that electron beam is write the photoresist pattern, and shows, on the wafer under the situation of 45nm characteristic dimension, the variation of similar 2-3nm is arranged in the critical dimension (for example, live width) across whole mask.(for example, this is changed to the 3 σ differences that all measure live width).This heterogeneity in photoresist critical dimension typically changes between different masks source and client.In order to satisfy current demand, the mask etch process must not make this change increase above 1nm, so the change in etched mask pattern can not surpass 3-4nm.The requirement of these strictnesses results from uses diffraction to obtain tangible image on wafer in the quartz mask pattern.Use current technology to be difficult to satisfy this requirement.For the technology in the future that may relate to 22nm wafer feature size, will become even more difficult.The etch bias phenomenon has increased this difficulty, and wherein the loss of the photoengraving pattern during the mask etching causes dwindling of on quartz mask the live width in the etched pattern (critical dimension).These difficulties are intrinsic in the mask etch process, because (for example with respect to the typical mask material of photoresist, quartz, chromium, molybdenum silicide) the etching selectivity typical case less than 1, therefore etching mask photoresist pattern during the mask etch process.
By the degree of depth of explication, some mask patterns require the opening of etching cycle to enter quartz mask, and this is crucial to obtaining at the point-device phase alignment by the interfering beam in the wafer exposure process of mask.For example, in the phase-shift mask of a type, define each line by chromium line with microlith English line, this microlith English line exposes on each side of chromium line, quartzy line on a side is etched into the accurate degree of depth, and 180 degree phase shifts of light are provided with respect to the light of the not etching quartz on the opposite side that is passed in this chromium line.In order to be controlled at the etch depth in the quartz accurately, must be by this technology of timing interrupt to measure the tight monitoring etching technology of etch depth in quartz.Each this inspection need remove mask from mask etch reactor chamber, removes photoresist, measure etch depth and estimate in order to arrive the remaining etch process of the target depth time according to the etch process time of using up then, deposit new photoresist, electron beam is write mask pattern on resist, introduces mask again in the mask etching chamber and restart etch process.Supposing that etching speed keeps stable and evenly assess reaching the etching that needs the residue of degree of depth etching period, is insecure assessment therefore.The problem of this loaded down with trivial details technology comprises poor efficiency and expensive and be increased in to introduce in the photoresist pattern and pollute or the chance of fault.Yet,, as if there is no need here around this problem owing to accurately control the needs of etch depth.
Extremely evenly distribute at the little tolerance requirement etch-rate on whole mask surface on the cd variations.Need in quartz material in the mask of accurate etch depth, have two critical dimensions, one is that live width and another are etch depth.The uniformity requirement of two types critical dimension is across the uniform etching rate distribution of mask.By using the source power applicator, heterogeneity on etch rate distribution can be reduced to a certain degree, this source power applicator can change the radiation profile of plasma ion density, for example the inductive source power applicator of being made up of the inside and outside coil antenna on wafer.Yet a kind of like this method can only be used for the heterogeneity of symmetry, i.e. center-Gao or center-low etch rate distribution.In fact, the heterogeneity on each rate distribution can be asymmetric, the high etch rates on angle of mask for example, etc.More basic restriction is that this mask etch process is easy to have the center of etch-rate-low distribution so strictly, this etch-rate is adjustable feature, a kind of like this inductive source power applicator has inside and outside coil, can not change etch rate distribution outside central authorities-low state.
Another challenge for non-homogeneous etch rate distribution is that etch rate distribution is easy to that very big variation is arranged in the different reactor of identical configuration, and when but critical component and consumers are replaced, the for example replacement of negative electrode may have very big variation within same reactor.This etch rate distribution presents high sensitive to the little change in the feature of replacing part, and this replacement part has the unpredictable variation according to consumable replacement.
Another challenge is to replace lifter pin when lifter pin damages or is not suitable for using in reactor.If do not use depthometer and/or fitting piece, be not easy to replace traditional lifter pin, this provable restriction owing to reactor, it is difficult to approaching and removes.
Thereby needed is significantly to dismantle the lifter pin that reactor shifts out easily and substitutes.
Summary of the invention
The present utility model literary composition has been described and has been used for the dismountable lifter pin that is used for plasma reactor of etching workpiece.In one embodiment, lifter pin comprises the vertical body with ring section, and this body comprises first circular terminal and second end of circle and the incision tract that forms in second end.Incision tract is suitable for dismountable lifter plate (plate) that is arranged on etc. in the stripped chamber that is connected to, wherein this body comprises first diameter region and incision tract, and this incision tract comprises at least two zones, diagonal angle (diametrical) that separated by flank that have than minor diameter.
In another embodiment, lifter pin comprises longitudinal axis, first terminal and second end with ring section, wherein this second end comprises second diameter parts and the 3rd diameter parts, and wherein this second diameter parts and the 3rd diameter parts have the diameter less than first diameter parts, and partly separate by flank, this flank partly has the diameter that equates with this first diameter parts in fact.
Description of drawings
Understood in detail above-mentioned feature of the present utility model in this way, the utility model that summarizes above will have more concrete description, comprise reference example, and some embodiment wherein are shown in the drawings.Yet it should be noted that accompanying drawing only shows exemplary embodiments of the present utility model, thereby do not think and the scope that has limited it can allow other equal effective embodiment for this utility model.
Fig. 1 describes the plasma reactor that is used to realize the mask etch process.
Fig. 2 A describes the bottom of the reactor of Fig. 1.
Fig. 2 B is illustrated in the mask supporting base of the reactor of the Fig. 1 in the raised position.
Fig. 3 is the top view of the negative electrode of the reverberator among Fig. 1.
Figure 4 and 5 are top view and side views of an alternate embodiments of this negative electrode.
Fig. 6 and 7 is top view and side views of another alternate embodiments of this negative electrode.
Fig. 8 is the sketch with plasma reactor of back side end point determination device.
Fig. 9 and 10 is figures of the optical end point detection signal that obtains from the front and back of mask respectively.
Figure 11 and 12 is figures of the interference fringe optical signalling that obtains from the front and back of mask respectively.
Figure 13 is the figure of a plurality of wavelength interference spectrum signals of obtaining from an embodiment of the reactor of Fig. 8.
Figure 14 illustrates corresponding to Figure 10, has the embodiment based on the reactor of Fig. 8 of the back side end point determination of entire emission light intensity.
Figure 15 illustrates corresponding to Figure 12, has the embodiment of reactor of Fig. 8 of the back side end point determination of calculating based on interference fringe.
Figure 16 illustrates the embodiment that has based on the reactor of Fig. 8 of the back side end point determination of a plurality of wavelength interference spectrums.
Figure 17 illustrates the embodiment that has based on the reactor of Fig. 8 of the back side end point determination of optical emission spectroscopy (OES).
Figure 18 illustrates has OES and based on the work example of the back side end point determination of interfering.
Figure 19 and 20 is respectively the negative electrode of embodiment of Figure 18 and the skeleton view of device board.
Figure 21 is the cross-sectional view of the negative electrode of Figure 19.
Figure 22 A and 22B are described in the series of steps in the quartz mask etch process that uses back side end point determination.
Figure 23 A, 23B, 23C, 23D and 23E are described in the series of steps in the chromium-molybdenum silicide-quartz mask etch process that uses back side end point determination.
Figure 24 A, 24B, 24C, 24D and 24E are described in the series of steps in the chromium-quartz mask etch process that uses back side end point determination.
Figure 25 and 26 is respectively side view and the end face view of embodiment, distributes from mask back side continuous coverage real-time etching rate in this embodiment.
Figure 27 A is the side view of an embodiment of lifter pin.
Figure 27 B is the part decomposition view of second end of the lifter pin among Figure 27 A.
In order to help to understand, use the total identity element of same reference number presentation graphs shape in possible place.The element and the feature that can be contemplated that an embodiment can advantageously be incorporated not further other embodiment of narration into.Yet it should be noted that accompanying drawing only shows exemplary embodiments of the present utility model, thereby do not think and the scope that limits it can allow other equal effective embodiment for this utility model.
Embodiment
The inhomogeneity negative electrode of RF with enhancing:
We have found that the non-homogeneous etch rate distribution in the technology mask etch process is because in supporting base, or in the plasma reactor of realizing the mask etch process, support to have RF electricity heterogeneity in the negative electrode of mask.The RF bias power is applied to pedestal to be controlled at the plasma ion energy of mask surface, and the RF source power is applied at for example expense (overhead) coil antenna simultaneously, to produce plasma ion.The RF bias power is controlled at the electric field that influences ion energy of mask surface.Because the ion energy in mask surface influences etch-rate, therefore the electricity of the RF in pedestal heterogeneity causes the heterogeneity across the etch rate distribution of mask surface.We have found that there are several causes in the RF heterogeneity in the pedestal.One is the titanium screw that aluminium base (negative electrode) and aluminium device board are fixed together.This screw produces node (and thereby across mask surface, because their electrical characteristics and aluminium negative electrode is different) in the electric field pattern across base-plates surface.Another is the non-uniform Distribution of the conductivity between negative electrode and device board.Electrical conductivity between device board and negative electrode mainly is subjected to the restriction of this plate and negative electrode circumference.This may be because the bending of the negative electrode that is caused by vacuum pressure in plasma treatment procedure to small part.Conduction around this circumference can be heterogeneous, and this is owing to many factors, for example, and uneven fixedly titanium screw and/or the surface finish difference around this plate or this pedestal circumference.We by introducing several inhomogeneity parts of RF electricity that can strengthen across pedestal, solve these problems.At first, the continuous titanium ring around the circumference by the upper surface that extends to the negative electrode that comprises all titanium screw heads is provided is handled heterogeneity and uncontinuity in the RF field that the existence by the titanium screw in the aluminium negative electrode causes.Electroplate by the nickel that high conductance is provided on the circumferential surface of equipment oriented sheet and negative electrode, and by between device board and negative electrode, introducing the RF packing ring, handle the inhomogeneous variation in conductivity that fixedly causes owing to surface difference XOR titanium screw, this packing ring is compressed between the circumference of device board and negative electrode.
With reference to figure 1, be used for plasma reactor at the mask etched pattern comprise by sidewall 12 and on cover the vacuum chamber 10 that top board 14 centers on, and by vacuum pump 15 emptyings of control constant pressure.Mask supporting base 16 support substrates 18 in this chamber 10.As describing after a while in this manual, this mask typically is made of quartz substrate, and can further be included in the additional mask thin layer on the quartz substrate top surface, for example chromium and molybdenum silicide (chrome and molybdenum silicide).In addition, provide pattern to limit layer, the hard mask that it can be photoresist or is formed by the chromium layer.In the mask of other type, quartz substrate does not have at overlayer except the photoresist pattern.
By covering inside and outside coil antenna 20,22 supplying plasma source power, this inside and outside coil antenna 20,22 is driven by separately RF source power generator 24, the 26 RF impedance matching circuit 28,30 by separately.Although sidewall 12 can be aluminium or other metal that is connected to ground, top board 14 is typically the insulating material of the RF power induction coupling of permission from coil antenna 20,22 to chamber 10.The evenly spaced injection nozzle 32 at the top by sidewall 12 is being introduced process gass by gas manifold from gas panels 36.This gas panels 36 can be supplied 38 by gas with various and constitute, and this gas supply 38 is connected to output valve or concentrated flow controller 42 by valve or concentrated flow controller 40 separately, and this output valve or concentrated flow controller 42 are connected to gas manifold 34.Mask supporting base 16 is made of metal (for example, the aluminium) negative electrode 44 that is supported on the hardware plate 46.Negative electrode 44 has internal coolant or heating liquid flow channel (not shown), and this passage enters and discharges by supply in device board 46 and outflow port (not shown).By by RF bias power generator 48 the RF bias power being applied to device board by RF impedance matching circuit 50.Be passed in the interface between device board 46 and the negative electrode 44, the RF bias power conducted to the top surface of negative electrode 44.Negative electrode 44 has central platform (central plateau) 44a, supports foursquare quartz mask or substrate 18 thereon.This platform size size common and substrate 18 is complementary.As below will discussing, although platform 44a is less a little so that the fraction of mask circumference or edge 18a exceed a bit of distance of platform 44a.Base ring 52 around platform 44a is divided into the acquisition loop 52b that (as at wedge shape shown in Fig. 2 B or Fig. 7 or disc-shaped part pattern) forms 2/5 bezel ring, 52a of about ring 52 and form the residue 3/5 of ring 52.Acquisition loop 52b has the support 54 of the edge 18a that wherein places substrate 18.No matter when need to remove 18, three lifter pins 56 of substrate (its have only visible in the diagrammatic sketch of Fig. 1) from supporting base 16 and lift acquisition loop 52b, this acquisition loop 52b lifts substrate 18 by edge 18a.Frequency place at power generator 48, base ring 52 is made of the material layer 53,55 of different electrical characteristics, and these electrical characteristics are chosen as and the RF impedance phase coupling (covering and acquisition loop 52a, 52b are made of different layers 53,55) that is presented by quartz substrate 18 and aluminium platform 44a combination.In addition, the top surface of the top surface of acquisition loop 52 and substrate 18 is coplanes, and the big uniform outer surface that therefore extends beyond the edge of substrate 18 during Cement Composite Treated by Plasma promotes uniform electric field and the sheath voltage across the surface of substrate 18.Typically, if low circular layer 55 is that quartz and top circular layer 53 are for example aluminium oxide of pottery, these conditions satisfy.Process controller 60 pilot-gas panels 36, RF generator 24,26,48, and chip treating apparatus 61.This chip treating apparatus can comprise lifting servomotor 62, mechanical arm vane arm 63 and the slit valve 64 in the sidewall 12 of chamber 10 that is connected to lifter pin 56.
A series of evenly spaced titanium screws 70 are fixed together negative electrode 44 and device board 46 along its circumference.Because the electric otherness between aluminium negative electrode/ device board 44,46 and titanium screw 70, this screw 70 is introduced discrete heterogeneity in the RF electric field at negative electrode 44 top surface places.Variation in the reflecting surface of negative electrode 44 and device board 46 is created in heterogeneity between negative electrode 44 and the equipment sheet 46 along its circumference, and it causes the corresponding heterogeneity in the RF electric field.Because be easy to therein at Cement Composite Treated by Plasma cathode during 44 that heart place is bent upwards (because chamber vacuum), mainly electrically contacting between negative electrode 44 and equipment sheet along its circumference.In order to make sensitivity at conductivity between negative electrode 44 and the equipment sheet 46 be decreased to variation of (a) compactedness among various titanium screws 70 and (b) variation in the surface characteristics, for example the annular membrane 72 of the high conduction material of nickel is deposited on the circumference of lower surface 44b of negative electrode 44, and the coupling annular membrane 74 of nickel (for example) is deposited on the girth of top surface of equipment sheet 46 simultaneously.Nickel film the 72, the 74th is mutually aimed at, and therefore two ring- type nickel films 72,74 constitute the reverse surface in contact of pedestals 44 and equipment sheet 46, and the high of the property led of offeing telex between them evenly distributes.Annular ditch groove 76 is provided and within groove 76, places conduction RF packing ring 80 by circumference, be implemented in the further improvement in the even conductivity along the lower surface of negative electrode 44.Optionally, can be provided at the similar ring-shaped groove 78 in the top surface of equipment sheet 46, it is aimed at groove 76.RF packing ring 80 may be suitable traditional type, for example when negative electrode 44 with equipment sheet 46 forces together and screw 70 compressed thin metallic spiral thing when tightening.In order to reduce or to eliminate the some heterogeneity that is easy to the Electric Field Distribution that causes at the head place of titanium screw 70, place continuous titanium ring 82 in the ring groove 84 in the circumference of the top surface of negative electrode 44.
Fig. 2 A describes film support pedestal 16 and its lifting assembly 90 below.This lifting assembly 90 comprises by pneumatic actuator or lifting servomotor 94 the lifting tripod 92 that drives and three lifter pins 56 that are placed on the lifting tripod 92.Guiding lifter pin 56 in lifter bellows 96, this lifter bellows comprise that ball bearing 98 is to be used for very smooth and almost not have the motion (for the pollutant that reduces to be caused by wearing and tearing) of friction to roll.Fig. 2 B is described in the negative electrode 44 with acquisition loop 52b and substrate 18 in the raised position.When rising mask, allow the mechanical arm blade near substrate 18 by the space that forms cover piece and separating of acquisition loop 52a, 52b.
(for example, electric specific inductive capacity) distribution solves the problem of the extreme central authorities-low etch rate distribution across substrate 18 surfaces to electrical characteristics by changing cathode platform 44a.In one embodiment, this realizes that by center embolus 102 and outside embolus 104 on every side are provided these two emboluss and base ring continuous plane surface of 52 formation and they are electric inequality materials on the top surface of platform 44a.For example, become extreme central authorities-low trend in order to reduce etch rate distribution, center embolus 102 can be conductive material (for example, aluminium), yet outside embolus 104 can be insulating material (for example, pottery is as aluminium oxide).The conductive type of this center embolus 102 provides the lower impedance path for the RF electric current, be increased in the ion energy and the etch-rate at substrate 18 centers, the outside embolus 104 that insulate simultaneously presents higher impedance, and it reduces the etch-rate in the periphery of substrate 18.This combination improves etch rate distribution, causes it more approaching evenly.Have this feature, be applied to the relevant RF power level of inside and outside coil antenna 20,22, can realize the fine setting of etch rate distribution by adjustment.The variation that reaches in the basic distribution of the needed plasma ion density of uniform etching rate distribution is reduced to quite little quantity, this quantity within the ability of the RF power division between the inside and outside coil 20,22 to obtain uniform etch rate distribution.Fig. 3 is the top view of inside and outside embolus 102,104.In alternative embodiment, this embolus 102,104 can be for having the insulator of differing dielectric constant (electric specific inductive capacity).Fig. 4 and Fig. 5 describe the detailed details according to this principle, and the concentric ring 102,104,106,108 that wherein uses four cumulative different electrical characteristics is so that etch-rate is more even.The alternative embodiment of the Adjustable real-time that the RF electrical characteristics that Fig. 6 and Fig. 7 describe provides negative electrode 44 distribute.Within the hollow circuit cylinder 114 of the central inner of negative electrode 44, piston 110 is controlled the movably axial location of aluminium sheet 112.Aluminium sheet 112 electrically contacts with the remainder of aluminium platform 44a.Insulator (for example, pottery) but the top of top-film 116 covered cathodes 44.Because aluminium sheet 112 is near the top of cylinders 114, the electrical impedance by negative electrode 44 reduces, thereby is increased in the etch-rate of substrate 18 centers.On the contrary, because aluminium sheet 112 moves down away from substrate 18 in cylinder 114, the etch-rate in the mask center reduces.In order to maximize homogeneity or to remedy heterogeneity, can manage the detent 118 of control piston 110 axially-movables to regulate etch rate distribution by process controller 60 (Fig. 1).
Pass the etch-rate monitoring and the end point determination at the mask back side:
Pass negative electrode 44 and pass the optical sensing at the back side of the mask of substrate 18 by use, reduce or eliminates the periodic breaks etch process with measurement on mask etch depth and the high production cost of critical dimension.Interrupting this etch process is necessary to carry out this periodic measurement, and this is because with respect to the etching selectivity etch process of the difference of photoresist: usually, mask material than the photoresist etching slowly many.Typically the thick-layer by deposition photoresist on mask addresses this problem, and the surface is random inhomogeneous or coarse but the high etch rates of resist causes photoresist.This roughness influence is passed the light of photoresist and thereby is introduced in any optical measurement of critical dimension and etch depth and disturb.Thereby the temporary transient photoresist that removes during each periodic measurement to guarantee noiseless optical measurement, before restarting interrupted mask etch process, must deposit photoresist again and rewrite the groove pattern in photoresist.
In the mask etching plasma reactor of in Fig. 8, describing, when mask or substrate 18 are positioned at appropriate location on the mask supporting base and use at negative electrode 44 provides back side optical measuring device, avoided these difficulties and allowed to continue observing critical dimension or during whole etch process, measuring etch depth.This back side measurement mechanism has utilized the optical clear attribute of substrate 18, and substrate 18 typically is quartz.The film that can deposit thereon (for example chromium or molybdenum silicide) may be opaque, but the formation of opening that defines the pattern shape of substrate 18 groove patterns can be by optical detection.Can by negative electrode 44 observe at the mask back side by these layers reflection or transmission pass the change of the light intensity of these layers.This observation may be used to carry out the etch process end point determination.When the etching quartz material, during etch process, observed optical interference can be detected at the mask back side by negative electrode 44, with the executed in real time etch depth measurement.An advantage is that the image or the light signal that detect from the mask back side are not subjected to the photoresist The noise, perhaps compares with this measurement of top surface (photoresist side) execution of trying from substrate 18 at least, and influence is very little.
For these purposes, the reactor of Fig. 8 is included in the groove 120 within the top surface of negative electrode 44, and groove 120 can hold lens 122, and the axial plane of these lens is to the back side of mask or substrate 18.The a pair of optical fiber 124,126 that relative lens of diameter 122 are less,, have and approach or terminal 124a, the 126a of contact lens 122, both almost aim at mutually at the optical axis place of lens 122.In fact each optical fiber 124,126 of describing in Fig. 8 can be a tuftlet optical fiber.Optical fiber 124 has another the terminal 124b that is connected to light source 128, and light source sends the light of a wavelength, and substrate 18 is transparent on this wavelength, is visible wavelength for quartz mask usually.Under the situation of interfering depth survey, the wave spectrum of selecting light source 128 is so that the locally consistent of the groove pattern of substrate 18.For in the periodic feature that is about the etching mask structure about the 45nm level (or the periodic characteristic size under a micron),, then satisfy this requirement and be if light source 128 is luminous in visible spectrum.Optical fiber 126 has its another end that is connected to optical receiver 130.Under the situation of single end point determination, optical receiver 130 can only detect light intensity.Under the situation that critical thickness (for example, live width) is measured, optical receiver 130 can detect the image of the etching line in the observation field of lens 122, from its can determine live width (for example, from interfere or diffraction pattern infer or from the quantity of interference fringe, calculate).In another embodiment, optical receiver 130 can comprise the spectrometer that is used to carry out a plurality of wavelength interferometry, from its deducibility or calculating etch depth.For this mensuration, process controller 60 comprises the optical signal processor 132 that can handle from the optical signalling of optical receiver.This optical signalling is handled and can be comprised (depending on concrete realization) following one: carry out the inspection of etch process terminal point from the change of ambient light intensity; Measure critical dimension from the two dimensional image that detects by optical receiver 130; Determine etch depth from a plurality of wavelength interference spectrums, optical receiver 130 is made up of spectrometer in the case.Alternately, use is by plasma emission and pass through the light that transparent mask transmits, and this spectrometer can be used for carrying out the etch process end point determination by the optical emitting spectrometry from chip back surface, does not use light source 128 in the case.
60 pairs of process endpoints from optical signal processor 132 of process controller detect information (or etch depth measurement information) and react, and the various elements with the control plasma reactor comprise RF generator 24,26,48 and chip processing device 61.Typically, when arriving the etch process terminal point, process controller 60 is ended etch process and remove substrate 18 from pedestal 16.
Fig. 9 is described in during the chromium etch process (wherein according to the chromium thin film of mask groove pattern etching on the quartz mask surface), the chart as the function of time of the peripheral reflection light intensity that detects from the end face (coating photoresist) of mask.The big amplitude of oscillation in the intensity of describing in the chart of Fig. 9 is represented the interference that caused by the roughness in the top surface of photoresist layer.The step function signal that the dotted line representative is hidden in interference, this step function is consistent with chromium etch process terminal point.Figure 10 passes through the chart of negative electrode 44 from the identical measurement of chip back surface acquisition in the reactor of Fig. 8, wherein, and optical receiver 130 detection of reflected light levels.The interference that this photoresist causes reduces greatly, represents clearly in optical data that therefore terminal point limits step function.Transfer point is represented at the edge of step function, in case arrive the bottom of chromium thin film at transfer point place etch process, then intensity of reflected light descends, and reduces suddenly in the reflective surface area of this some place chromium.
Figure 11 and 12 for the time (or, ground of equal value, for the space) the chart of light intensity, and, in Figure 12, for example detect by optical receiver 130, wherein the periodic peak value in light intensity is corresponding to the etching interference fringe, its spacing decision etch depth, or in suprasil mask substrate 18 the etched difference on the thickness between at interval the different surfaces of feature periodically closely.Figure 11 describes end face from mask by the density that photoresist detects, and has the interference component that weakening interference fringe that a large amount of photoresists causes detects.Figure 12 describes and passes the density of the mask back side by optical receiver 130 detections of Fig. 8, and wherein the interference of photoresist introducing does not exist in fact.
Figure 13 is made up of spectrometer and light source 128 produces under the situation of wave spectrums at optical receiver 130, and expression is as the chart of the light intensity of function of wavelength.The behavior of the intensity spectrum of the chart of Figure 13 is the typical situation of the effect that interferes between the light of surface reflection of the different depth that periodically separates in transparent substrates 18 in sub-micron features.At low wavelength, peak value is a periodicity and evenly spaced, and main optical effect is to interfere.In upper wavelength, locally coherence among the periodic feature in substrate 18 is so not strong, therefore diffracting effect significantly strengthens along with the wavelength that increases becomes, and as describing in Figure 13, causes in the intensity behavior of upper wavelength still less at interval even and more complicated.The interval of peak value in Figure 13 at low wavelength, is the function of etch depth especially, and it can be inferred from the interval of peak value to peak value.
Figure 14 illustrates the embodiment of the reactor of Fig. 8, wherein optical receiver 130 is that ambient light intensity detector and optical signal processor 132 are programmed to seek the big deflection (step function) in the entire emission light intensity, corresponding to the end point determination chart of Figure 10.Light source 128 in this embodiment can be any suitable light source.Alternative, can omit light source 128, so optical receiver 130 is only to responding from plasma light, this plasma is by substrate 18 or the transmission of transparent mask.
Figure 15 illustrates the embodiment of the reactor of Fig. 8, wherein optical receiver 130 is that scioptics 122 fully focus on to decompose the interference fringe detecting device of interference fringe, and in order to calculate the etch depth in suprasil substrate 18, programming optical signal processor 132 is to calculate interference fringe (for example, from the type shown in Figure 12 intensity to time data).This calculates and produces virtual instantaneous etch depth, and it is compared with the user-defined target depth in being stored in storage 202 by logic 200.This logic 200 can use traditional numeral coupling or bottom line program to detect the coupling between depth value storage and that measure.Coupling causes that logic 200 is programming controller 60 mark etching end points.
Figure 16 illustrates the embodiment of the reactor of Fig. 8, and its interference spectrum technology of using Figure 13 is to measure or to determine etch depth in suprasil mask or substrate 18.In this case, light source 128 emission multi-wavelength or the spectrum in visible-range (for about hundreds of nanometer or periodicity mask feature size still less).Optical receiver 130 is a spectrometer.Composite signal regulator and analog to digital converter 220 will be converted into optical signal processor 132 accessible digital signals by the spectral information that spectrometer is collected.As mentioned above, a kind of pattern that wherein can carry out end point determination is to calculate etch depth from the interval than between the periodic peaks the low wavelength coverage of the data of being represented by Figure 13.
Compare Logic 200 can be compared the transient measurement etch depth with the user-defined target depth in being stored in storage 202, to determine whether to arrive the etch process terminal point.In another pattern, Compare Logic 200 fully powerful with the spectrum of wavelengths (corresponding to the chart of Figure 13) of the instantaneous output of the expression spectrometer of numeral with compare corresponding to the known frequency spectrum of the etch depth that requires.This known frequency spectrum can be stored in the storage 202.By the coupling between measurement frequency spectrum and storage frequency spectrum of Compare Logic 200 detections, or approximate match, cause etch process terminal point sign to send to process controller 60.
Figure 17 illustrates the embodiment of the reactor of Fig. 8, and wherein optical receiver 130 is for the optical emitting spectrometer of the emission line of the optical radiation that can distinguish free plasma emission in the chamber, to carry out optical emitting spectrometry (OES).Optical signal processor 132 is the OES processor, the intensity (or detect described disappearance) of this processor of programming to follow the trail of selected optical line, and the intensity of selected optical line is corresponding to the indication of the chemical species of the material in etched layer.Based on predetermined conversion (for example, the disappearance of the chromium wavelength line during the chromium etch process in the OES spectrum), optical signal processor 132 sends the etch process end point determination and identifies to process controller 60.
Figure 18 describes the embodiment of our construction, have a pair of lens 230,232 in the groove that separates respectively 231,233 in the surface of negative electrode 44, these lens 230,232 are focused decomposing interference fringe, the light of focusing by towards or the optical fiber 234,236 of contact lens 230,232 separately deliver respectively.Optical fiber 234,236 is connected to interference search gear 238 (it can be striped detector or spectrometer), and this detector 238 has the output that is connected to process controller 60.Lens 230,232 receive light by optical fiber 242,244 from light source 240.This light is carried to detecting device 238 from the top surface reflected back lens 230,232 of substrate 18 and by optical fiber 234,236.In addition, the embodiment of Figure 18 has the 3rd groove 249 in cathode surface, and this groove can hold the 3rd lens 250 that are connected to the input of OES spectrometer 254 by optical fiber 252.The output that OES processor 256 is handled OES spectrometers 254 with carry out end point determination and with result transmission to process controller 60.In Figure 19, describe the negative electrode 44 of the embodiment of Figure 18, three grooves 231,231,249 of the lens 230,232,250 that hold separately are shown.Figure 20 is illustrated in the respective aperture 260,261,262 of the optical devices (not shown) that is used to hold support of lens 230,232,250 in the device board 46.Figure 21 shows at the optical fiber of the pedestal 16 inside cross-sectional view to the connection of lens.
Although the reactor among Figure 16,17 and 18 has been described as using spectrometer 130 (Figure 16 and 17) and 254 (Figure 18), this spectrometer 130 or 254 can be replaced by the one or more optical wavelength filters that are adjusted to predetermined wavelength.Each this optical wavelength filter can with the photomultiplier transit pipe jointing with the enhancing signal amplitude.
Back side end point determination mask etch process:
Figure 22 A and 22B are described in the technology that is used for etching groove pattern in the quartz material of mask.In Figure 22 A, quartz mask 210 covers with photic resist layer 212, and this photoresist layer has the opening 216 of the periodic structure of line 214 at interval and definition in photoresist layer 212.In the reactor of Figure 15 or 16, the quartz etch process gas of CHF3+CHF4+Ar is incorporated in the chamber 10, by etching quartz material within the opening 216 of RF generator 24,26 and 48 supply power and formation in photoresist layer 212.By from the light 218 of etched top surface reflection with from the interference between the light 219 of the not etching top surface reflection of quartz substrate 210, constantly measure the etch depth in the quartz.As long as reach the etch depth (Figure 22 A) of the expectation technology that just stops etching.So remove photoresist to make the mask (Figure 22 B) that needs.
Figure 23 A describes the technology that is used for the etching tri-layer masking architecture to 23E, this three-decker is by below quartz mask substrate 210, molybdenum silicide layer 260, (silicon nitride oxide that comprises molybdenum), chromium layer 262, chromated oxide antireflecting coating 264 and photoresist layer 266, has the opening 268 that forms in photoresist layer 266 (Figure 23 A).In the step of Figure 23 B, use for example Cl2+O2+CF4 of chromium etching process gas, have individual reflection coefficient end point determination (chamber of Figure 14) or having etching chromium floor 262 and antireflecting coating 264 in the plasma reactor chamber of OES end point determination (chamber of Figure 17).Remove photoresist layer 266 (Figure 23 C).Etching molybdenum silicide layer 260 then, as shown in Figure 23 D, the process gas of use is the etchant of molybdenum silicide, for example, SF6+CL2, and use molybdenum layer 262 as hard mask etchings.By single peripheral reflection coefficient or by the OES end point determination, in having the plasma reactor of end point determination, carry out this step, for example chamber of Figure 14 or Figure 17.In Figure 23 E, use for example CH3+CF4+Ar of chromium etching process gas, remove chromium layer 262 and chromium oxide antireflecting coating 264.Can use the single end point determination of having of Figure 14 and 17 not have the reactor of etch depth measurement to carry out this step.This has kept the tectal quartz mask substrate of silicide of the molybdenum with definition groove pattern.
Figure 24 A describes to 24E and is used to make binary mask, this mask is made up of the periodicity chromium line on the suprasil mask that joins in the periodic intervals of the quartz of side and exposure, change in the polysilicon spacer that exposes, this polysilicon spacer is etched to a degree of depth, the degree of depth of desired angle of transmitted light phase shift on this degree of depth (for example 180 degree).Figure 24 A has described the initial configuration of being made up of quartz mask substrate 300, chromium layer 302, chromium oxide antireflecting coating 304 and photoresist layer 306.In the step of Figure 24 B, in reactor chamber (for example Figure 14 or 17 chamber) at middle etching chromium and the chromium oxide layer 302,304 of process gas Cl2+O2+CF4.In the step of Figure 24 C, remove photoresist layer 306, thereafter as shown in Figure 24 D, in quartz etch process gas CHF3+CF4+Ar, the expose portion of etching quartz mask substrate 300.The quartz etch step of execution graph 24D in reactor chamber, this reactor chamber can detect or be controlled at the etch depth in the quartz mask substrate 300, for example the chamber among Figure 15 or 16.During etch process, constantly monitor instantaneous etch depth and on mask 300, just end etch process in case reach target etch depth.Final result is described in Figure 24 E.
Continuous monitoring across the mask surface etch rate distribution:
Figure 25 and 26 illustrates the embodiment of the wafer support pedestal 16 of Fig. 1, this wafer support pedestal 16 has the matrix of the back etched depth detection element (lens and optical fiber) in the top surface of negative electrode 44, during etching, do not interrupting etch process or disturbing under the situation of mask substrate, across the whole surface of mask or substrate, the continuous instantaneous picture or the example that provide etch rate distribution or etch depth to distribute.The top surface of aluminium sheet 44 has the matrix of the opening 320 on its top, and each opening holds the lens 322 towards mask substrate 300 back sides.Light source 324 provides by output optical fibre 326 and is connected to the light of corresponding lens 322 separately.Lens 322 produce sufficient focusing to decompose interference fringe.Interfere detecting device 328, it both can be that the sensor that helps the edge to count can be a spectroscope also, was connected to the input optical fibre 330 that is connected with each self-corresponding lens 322.Switch or multiplexer 332 allow sequentially to be transferred to detecting device 328 from the light of each input optical fibre 330.There are three kinds of mode of operations can operate equipment in Figure 25 and 26.In first kind of pattern, in the field of one the specific observation in lens 322, etch depth is from the interval calculation between the interference fringe.In second kind of pattern, detecting device 328 is a spectrometer, and in the field of one the specific observation in lens 322, etch depth is (with reference to the Figure 13) from the less wavelength peak interval calculation of multi-wavelength interference frequency spectrum.In the third pattern, the multi-wavelength interference frequency spectrum is compared in the particular time interval detection and with the spectrum in storehouse 340, is known for the corresponding etch depth in storehouse.Etch rate distribution is calculated by etch depth and elapsed time.The etching heterogeneity of this distribution record technology and feed back to process controller 132.This controller 132 responds to reduce the heterogeneity in etch rate distribution by the adjustable characteristics of conditioned reaction device.
Though in Figure 25 and 26 examples, described the etch depth sensor in the top surface of platform 44a or the 3*3 matrix of lens 322, can use any amount of row and column in such sensor matrices so that matrix becomes the n*m matrix, m and n are suitable integers here.
In one embodiment, process controller 132 can be programmed to infer that (by the etch rate distribution information that is provided by spectrometer or sensor 130) etch rate distribution is that height of center or center are low.Process controller 60 can respond to reduce heterogeneity to this information by some the adjustable characteristics of adjusting reactor.For example, process controller 60 can change the RF power division between inside and outside coil 20,22.Alternately or additionally, process controller 60 can change the height of the removable aluminium sheet 112 in the reactor of Fig. 6 and 7.Come the etch depth array of sensor elements among the comfortable platform 44a or the feedback of matrix, the homogeneity that allows continuous test and the error adjustment of process controller 60 by the reactor adjustable element to improve etch rate distribution
Figure 27 A is the side view of 56 1 embodiment of lifter pin.Lifter pin 56 comprises the body 2705 with first terminal 2710 and second end 2715.This body 2705 can be by the process compatible made, for example stainless steel, aluminium, pottery etc., and in one embodiment, body 2705 is by aluminium oxide (Al
2O
3) made.In an embodiment, body 2705 comprises the axle with circular cross section and comprises at least one overall diameter, for example first diameter region 2725, and one or more less overall diameter district, for example second diameter region 2730A and the 3rd diameter region 2730B.This second diameter region 2730A and the 3rd diameter region 2730B can be separated by flank 2735, and flank 2735 can comprise the overall diameter that equals first diameter region 2725 in fact.In one embodiment, second end 2715 comprises by at least one the recessed region 2708 of interface definition among first diameter region 2725 and the second diameter region 2730A and the 3rd diameter region 2730B.In certain embodiments, recessed region 2708 comprises first diameter region 2725 and the second and the 3rd diameter region 2730A that is separated by flank, the interface of 2730B.
Recessed region 2708 can promote to be connected with jacking gear 90 and/or lift lifter bellows 96 among Fig. 2 A.Recessed region 2708 also is convenient to be instructed to the function replacement of device or gauge, to determine when lifter pin 56 is arranged in jacking gear 90.Other have the lifter pin of single diameter, during substituting, may need to monitor and/or the position of lifter pin is accurately located and determined to peripheral measurement mechanical device.In addition, other lifter pins may need peripheral stationary installation to help to connect jacking gear 90.In an application, when substituting lifter pin 56, therefore recessed region 2708 provides one and stops indication, for example sense of touch when lifter pin 56 is connected to jacking gear 90.In another embodiment, recessed region 2708 provides extra function to be used for lifter pin 56 is fixed to jacking gear 90 and/or lifter bellows 96.
Figure 27 B is the exploded side view from part second end 2715 of Figure 27 A acquisition.As mentioned above, flank 2735 can comprise the overall diameter that equals first diameter region 2725 in fact, and the second and the 3rd diameter region 2730A, 2730B are slightly less than first diameter 2725 and flank 2735.In one embodiment, the second and the 3rd diameter region 2730A, 2730B are equal in fact, but in another embodiment, the second and the 3rd diameter region 2730A, 2730B have nuance each other.Second end 2715 also comprises the circular distal by two radius definition, for example first radius 2740A and the second radius 2740B.In an example, the second radius 2740B is approximately big four times than the first radius 2740A.In certain embodiments, first terminal 2710 and second end 2715 all comprises two radius, for example first radius 2740A and the second radius 2740B.
Although above-mentioned mainly is about embodiment of the present utility model, under the situation of the base region that does not break away from it, can make other and further embodiment of the present utility model, and its scope is determined by following claim.
Claims (17)
1, a kind of lifter pin that is used for plasma-reaction-chamber is characterized in that, comprising:
Vertical body with annular cross section, this body have circular first end and the second circular end; With the recessed region that in described second end, forms, described recessed region is suitable for the separable lifter plate that is arranged in the plasma chamber that is connected to, wherein said body comprises first diameter region, and described recessed region comprises at least two diagonal zones of being separated by flank that have than minor diameter.
2, lifter pin according to claim 1, first second end terminal and described circle of wherein said circle comprises two radiuses.
3, lifter pin according to claim 1, first second end terminal and described circle of wherein said circle comprises first radius and second radius, and described second radius is approximately big four times than described first radius.
4, lifter pin according to claim 1, the diameter of wherein said flank are that the zone that equals described first diameter region and described at least two diameters in fact has the diameter less than the described diameter of described flank.
5, lifter pin according to claim 1, wherein said body comprises stupalith.
6, lifter pin according to claim 1, wherein said body comprises aluminum.
7, lifter pin according to claim 1, wherein said body comprises aluminium oxide (Al
2O
3) material.
8, lifter pin according to claim 1, the zone of wherein said at least two diameters comprise that second diameter region and the 3rd diameter region and each zone have different length.
9, lifter pin according to claim 1, wherein the zone of each described at least two diameter comprises length and diameter, the identical in fact and described length of wherein said diameter is different.
10, a kind of lifter pin that is used for plasma-reaction-chamber is characterized in that, comprising:
Longitudinal axis has annular cross section, first terminal and second end, wherein said second end comprises second diameter parts and the 3rd diameter parts, and wherein said second diameter parts and described the 3rd diameter parts comprise less than the diameter of described first diameter parts and by flank section and separating that described flank has the diameter that equals described first diameter parts in fact.
11, lifter pin according to claim 10, wherein said second diameter parts and described the 3rd diameter parts have defined recessed region.
12, lifter pin according to claim 10, wherein said axle comprises aluminum.
13, lifter pin according to claim 10, wherein said axle comprises aluminium oxide (Al
2O
3) material.
14, lifter pin according to claim 10, wherein each described first end and second end are circular.
15, lifter pin according to claim 14, wherein each described first end and second end comprise two radiuses.
16, lifter pin according to claim 14, first second end terminal and described circle of wherein said circle comprises first radius and second radius, and second radius is approximately big four times than described first radius.
17, lifter pin according to claim 10, wherein each described second diameter parts and described the 3rd diameter parts comprise length and diameter, the identical in fact and described length of wherein said diameter is different.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US88777607P | 2007-02-01 | 2007-02-01 | |
| US60/887,776 | 2007-02-01 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2009200017543U Division CN201348719Y (en) | 2007-10-29 | 2007-10-29 | Lifting pin for plasma reaction chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201218899Y true CN201218899Y (en) | 2009-04-08 |
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ID=40541734
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200720181419 Expired - Fee Related CN201218899Y (en) | 2007-02-01 | 2007-10-29 | Lifting pin used for plasma reaction chamber |
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| Country | Link |
|---|---|
| JP (1) | JP3138694U (en) |
| CN (1) | CN201218899Y (en) |
| TW (1) | TWM343237U (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109841544A (en) * | 2017-11-29 | 2019-06-04 | Tes股份有限公司 | The moving method and substrate board treatment of ejector pin unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789010B (en) * | 2014-12-24 | 2017-11-10 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and the adjusting method of plasma distribution |
-
2007
- 2007-10-26 TW TW96218062U patent/TWM343237U/en not_active IP Right Cessation
- 2007-10-29 JP JP2007008337U patent/JP3138694U/en not_active Expired - Fee Related
- 2007-10-29 CN CN 200720181419 patent/CN201218899Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109841544A (en) * | 2017-11-29 | 2019-06-04 | Tes股份有限公司 | The moving method and substrate board treatment of ejector pin unit |
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| Publication number | Publication date |
|---|---|
| TWM343237U (en) | 2008-10-21 |
| JP3138694U (en) | 2008-01-17 |
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