CN210805387U - Tantalum nitride film resistor manufacturing equipment - Google Patents
Tantalum nitride film resistor manufacturing equipment Download PDFInfo
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- CN210805387U CN210805387U CN201922404399.0U CN201922404399U CN210805387U CN 210805387 U CN210805387 U CN 210805387U CN 201922404399 U CN201922404399 U CN 201922404399U CN 210805387 U CN210805387 U CN 210805387U
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Abstract
The utility model discloses a tantalum nitride film resistor manufacture equipment belongs to the resistor and makes technical field. The manufacturing equipment of the tantalum nitride film resistor comprises a vacuum chamber, a rotating device, a gas extraction pump set, a gas supply device, a magnetic control device, a thermal resistance evaporation device, an AR ion cleaning device and an electron beam evaporation device; the air pump set and the air supply device penetrate through the vacuum chamber, are communicated with the inside of the vacuum chamber and are respectively used for pumping air in the vacuum chamber and filling rare gas; the vacuum chamber is ensured to be in a vacuum state by the air pump group, so that the preparation processes of AR ion rotary cleaning, tantalum nitride film resistor layer coating, titanium metal coating, noble metal coating and etching graph are all completed under the vacuum condition.
Description
Technical Field
The utility model relates to a technical field is made to the resistor, in particular to tantalum nitride film resistor manufacture equipment.
Background
The resistor is an indispensable electronic component of various electronic devices, and is one of the most used components in all electronic circuits. In recent years, the rapid development of electronic information technology has made new demands on electronic component technology, and resistor technology has also been developed completely, and has been developed from traditional wire-wound resistors, metal film resistors, graphite resistors, and chip thick film resistors to the current chip thin film resistors. Meanwhile, the blowout-type development of complex military environments and miniaturized consumer electronics products has required the resistors themselves to have high reliability and high adaptability since the last 21 st century. Therefore, miniaturization, high refinement, low temperature coefficient, environmental protection, and base metal have become major directions for the development of sheet resistors. The traditional thick film chip resistor is difficult to be greatly improved in the aspects of high precision, high stability and the like due to the limitation of production process and material types. In comparison, thin film chip resistor applications are the best seen, and are ideal products for replacing low-precision thick film chip resistors and other traditional lead resistors.
The tantalum nitride thin film resistor is a common thin film chip resistor, and the requirement on manufacturing equipment is high, so that the yield of the currently produced tantalum nitride thin film resistor is low, and the service life of the currently produced tantalum nitride thin film resistor cannot reach a design value.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a tantalum nitride film resistor manufacture equipment to it is lower to solve the tantalum nitride film resistor qualification rate of traditional tantalum nitride film resistor manufacture equipment production, and life can not reach the problem of design value.
In order to solve the technical problem, the utility model provides a tantalum nitride film resistor manufacturing device, which comprises a vacuum chamber, a rotating device, an air pump set, an air supply device, a magnetic control device, a thermal resistance evaporation device, an AR ion cleaning device and an electron beam evaporation device;
the air pump set and the air supply device penetrate through the vacuum chamber, are communicated with the inside of the vacuum chamber and are respectively used for pumping air in the vacuum chamber and filling rare gas;
the magnetic control device, the thermal resistance evaporation device, the AR ion cleaning device and the electron beam evaporation device are all fixedly connected inside the vacuum chamber.
Optionally, the rotating device is fixedly connected to the top end inside the vacuum chamber, and the rotating device can rotate in the vacuum chamber; a plurality of umbrella stands are uniformly distributed on the rotating device, a substrate base plate is fixedly placed on the surface of each umbrella stand, and the umbrella stands and the substrate base plate rotate along with the rotating device.
Optionally, a radio frequency sputtering target is placed on the magnetic control device, and the substrate is coated with a film; and the magnetic control device is provided with an adjusting mechanism for adjusting the height and the angle of the magnetic control device.
Optionally, the thermal resistance evaporation device is composed of a plurality of resistance boats, each resistance boat is provided with precious metal gold, and precious metal coating is performed on the tantalum nitride film resistor through thermal resistance evaporation of the precious metal gold in the resistance boat.
Optionally, the electron beam evaporation device is composed of a plurality of pincer pots, each pincer pot is filled with noble metal platinum, and noble metal in the pincer pot is evaporated through electron beams to carry out noble metal coating on the tantalum nitride film resistor.
Optionally, a flow guide mechanism is arranged in the gas supply device, and the flow guide mechanism comprises a flow distribution plate, a flow mixing plate and a partition plate; the mixed flow plate is positioned between the two splitter plates, and the partition plates are arranged between the mixed flow plate and the splitter plates.
Optionally, through grooves are formed in both the splitter plate and the partition plate, and are used for introducing gas into the flow mixing plate; the splitter plate is also provided with a plurality of sawtooth diversion trenches; the flow mixing plate is provided with a plurality of sawtooth flow mixing grooves.
Optionally, the side wall of the vacuum chamber is provided with a plurality of vacuum gauges and thermocouple thermometers, which are respectively used for detecting the vacuum degree and the temperature inside the vacuum chamber.
Optionally, the air pump set is formed by connecting a plurality of air pumps in series, and an air pipe connecting the air pump set and the vacuum chamber is provided with a gas valve.
The utility model provides a tantalum nitride film resistor manufacturing device, which comprises a vacuum chamber, a rotating device, a gas-pumping pump group, a gas supply device, a magnetic control device, a thermal resistance evaporation device, an AR ion cleaning device and an electron beam evaporation device; the air pump set and the air supply device penetrate through the vacuum chamber, are communicated with the inside of the vacuum chamber and are respectively used for pumping air in the vacuum chamber and filling rare gas; the magnetic control device, the thermal resistance evaporation device, the AR ion cleaning device and the electron beam evaporation device are fixedly connected inside the vacuum chamber, and the air pump set ensures that the vacuum chamber is in a vacuum state, so that the preparation processes of AR ion rotary cleaning, tantalum nitride thin film resistor layer coating, titanium metal coating, noble metal coating and etching patterns are all completed under a vacuum condition.
Drawings
Fig. 1 is a schematic structural diagram of an apparatus for manufacturing a tantalum nitride thin film resistor according to the present invention;
fig. 2 is an exploded view of a diversion mechanism of a tantalum nitride thin film resistor manufacturing apparatus provided by the present invention.
Detailed Description
The following provides a detailed description of an apparatus for manufacturing a tantalum nitride thin film resistor according to the present invention with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more fully apparent from the following description and appended claims. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.
The utility model provides a tantalum nitride film resistor manufacturing device, the structure of which is shown in figure 1, comprising a vacuum chamber 1, a rotating device 2, a gas-pumping pump group 3, a gas supply device 4, a magnetic control device 5, a thermal resistance evaporation device 6, an AR ion cleaning device 7 and an electron beam evaporation device 8; the air pump set 3 and the air supply device 4 both penetrate through the vacuum chamber 1 and are communicated with the inside of the vacuum chamber, and are respectively used for pumping air in the vacuum chamber 1 and filling rare gas; the magnetic control device 5, the thermal resistance evaporation device 6, the AR ion cleaning device 7 and the electron beam evaporation device 8 are all fixedly connected inside the vacuum chamber 1; the rotating device 2 is fixedly connected to the top end in the vacuum chamber 1, and the rotating device 2 can rotate in the vacuum chamber 1; a plurality of umbrella stands 21 are uniformly distributed on the rotating device 2, a substrate base plate 9 is fixedly placed on the surface of the umbrella stands 21, and the umbrella stands 21 and the substrate base plate 9 rotate along with the rotating device 2; a radio frequency sputtering target is placed on the magnetic control device 5, and the substrate base plate 9 is coated with a film; the magnetic control device 5 is provided with an adjusting mechanism 51 for adjusting the height and the angle of the magnetic control device 5; the thermal resistance evaporation device 6 consists of a plurality of resistance boats 61, noble metal gold is placed in each resistance boat 61, and noble metal coating is carried out on the tantalum nitride film resistor by evaporating the noble metal gold in the resistance boats 61 through thermal resistance; the electron beam evaporation device 8 is composed of a plurality of pincer pots 81, noble metal platinum is placed in each pincer pot 81, and noble metal coating is carried out on the tantalum nitride film resistor through electron beam evaporation of the noble metal in the pincer pots 81.
Specifically, as shown in fig. 2, a flow guide mechanism 41 is disposed in the air supply device 4, and the flow guide mechanism 41 includes a flow dividing plate 411, a flow mixing plate 412 and a partition 413; the flow mixing plate 412 is positioned between the two flow dividing plates 411, and the partition plates 413 are respectively arranged between the flow mixing plate 412 and the flow dividing plates 411; through grooves are formed in the flow dividing plate 411 and the partition 413 respectively and used for introducing gas into the flow mixing plate 412; a plurality of sawtooth diversion trenches are also formed on the diversion plate 411; a plurality of sawtooth mixing grooves are formed in the mixing plate 412; argon and nitrogen gas are respectively from the leading-in of flow distribution plate 411 both sides, when need not mixing, follow the leading-in of flow distribution plate 411 the latter half, directly get into vacuum chamber through the sawtooth guiding gutter, when needs mix, follow the leading-in of flow distribution plate 411 the first half, the process lead to the groove gets into the sawtooth mixing gutter of mixed flow plate 412, gets into vacuum chamber at last.
Specifically, with reference to fig. 1, a plurality of vacuum gauges 10 and thermocouple thermometers 11 are installed on the side wall of the vacuum chamber 1, and are respectively used for detecting the vacuum degree and the temperature inside the vacuum chamber 1; the air pump set 3 is formed by connecting a plurality of air pumps in series, and an air pipe connecting the air pump set 3 and the vacuum chamber 1 is provided with a gas valve.
Specifically, in the production of a tantalum nitride thin film resistor, the vacuum chamber 1 is first evacuated to 10 degrees by the pump group 3-3-10-6Pa magnitude; introducing argon gas into the vacuum chamber 1, and rotationally cleaning the substrate base plate 9 by using the AR ion cleaning device; then introducing nitrogen into the vacuum chamber 1, and performing radio-frequency sputtering on the substrate base plate 9 through the magnetic control device 5 to perform tantalum nitride thin film resistor layer coating; secondly, replacing the titanium target, continuing to perform radio frequency sputtering on the substrate base plate 9 through the magnetic control device 5, performing titanium metal coating on the surface of the tantalum nitride thin film resistance layer, and stopping introducing argon and nitrogen after the titanium target is replaced; then evaporating the noble metal platinum in the crucible 81 through the electron beam evaporation device 8, and performing platinum metal coating on the surface of the titanium metal film; evaporating the noble metal gold in the resistance boat 61 through the thermal resistance evaporation device 6, and performing gold metal coating on the surface of the platinum metal film; breaking vacuum to normal pressure after cooling, taking out the substrate 9 after coating from the vacuum chamber 1, and etching gold on the surface of the tantalum nitride thin film resistor layerPreparing a PAD pattern on the accessory layer, and removing glue, cleaning and drying for the first time; etching the tantalum nitride thin film resistor layer by a dry method to manufacture a resistor pattern; and finally, removing the photoresist, cleaning and drying again to finish the preparation of the tantalum nitride film resistor.
The above description is only for the preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and any modification and modification made by those skilled in the art according to the above disclosure are all within the scope of the claims.
Claims (9)
1. The manufacturing equipment of the tantalum nitride film resistor is characterized by comprising a vacuum chamber (1), a rotating device (2), a gas-pumping pump set (3), a gas supply device (4), a magnetic control device (5), a thermal resistance evaporation device (6), an AR ion cleaning device (7) and an electron beam evaporation device (8);
the air pump set (3) and the air supply device (4) penetrate through the vacuum chamber (1), are communicated with the inside of the vacuum chamber, and are respectively used for pumping air in the vacuum chamber (1) and filling rare gas;
the magnetic control device (5), the thermal resistance evaporation device (6), the AR ion cleaning device (7) and the electron beam evaporation device (8) are fixedly connected inside the vacuum chamber (1).
2. The tantalum nitride thin film resistor manufacturing equipment according to claim 1, wherein the rotating means (2) is fixedly connected to the top end inside the vacuum chamber (1), and the rotating means (2) can rotate inside the vacuum chamber (1); a plurality of umbrella stands (21) are uniformly distributed on the rotating device (2), a substrate base plate (9) is fixedly placed on the surface of the umbrella stands (21), and the umbrella stands (21) and the substrate base plate (9) rotate along with the rotating device (2).
3. The tantalum nitride thin film resistor manufacturing equipment according to claim 2, wherein a radio frequency sputtering target is placed on the magnetron device (5) to coat the substrate base plate (9); the magnetic control device (5) is provided with an adjusting mechanism (51) for adjusting the height and the angle of the magnetic control device (5).
4. The tantalum nitride thin film resistor manufacturing equipment according to claim 1, wherein the thermal resistance evaporation device (6) is composed of a plurality of resistance boats (61), each resistance boat (61) is placed with noble metal gold, and the noble metal gold in the resistance boat (61) is subjected to noble metal coating by thermal resistance evaporation.
5. The tantalum nitride thin film resistor manufacturing equipment according to claim 1, wherein the electron beam evaporation device (8) is composed of a plurality of pincer pots (81), each pincer pot (81) is provided with noble metal platinum, and the noble metal in the pincer pot (81) is subjected to noble metal coating by electron beam evaporation.
6. The tantalum nitride thin film resistor manufacturing equipment according to claim 1, wherein a flow guide mechanism (41) is arranged in the gas supply device (4), and the flow guide mechanism (41) comprises a flow distribution plate (411), a flow mixing plate (412) and a partition plate (413); the mixed flow plate (412) is positioned between the two flow distribution plates (411), and the partition plates (413) are arranged between the mixed flow plate (412) and the flow distribution plates (411).
7. The tantalum nitride thin film resistor manufacturing apparatus as claimed in claim 6, wherein said flow dividing plate (411) and said partition plate (413) are provided with through grooves for introducing gas into said flow mixing plate (412); the splitter plate (411) is also provided with a plurality of sawtooth diversion trenches; the flow mixing plate (412) is provided with a plurality of sawtooth flow mixing grooves.
8. The tantalum nitride thin film resistor manufacturing apparatus according to claim 1, wherein a plurality of vacuum gauges (10) and thermocouple thermometers (11) are installed on the side wall of the vacuum chamber (1) for detecting the degree of vacuum and the temperature inside the vacuum chamber (1), respectively.
9. The tantalum nitride thin film resistor manufacturing equipment according to claim 1, wherein the pump set (3) is formed by connecting a plurality of pumps in series, and a gas valve is installed on a gas pipe connecting the pump set (3) and the vacuum chamber (1).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922404399.0U CN210805387U (en) | 2019-12-27 | 2019-12-27 | Tantalum nitride film resistor manufacturing equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922404399.0U CN210805387U (en) | 2019-12-27 | 2019-12-27 | Tantalum nitride film resistor manufacturing equipment |
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| CN210805387U true CN210805387U (en) | 2020-06-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110983276A (en) * | 2019-12-27 | 2020-04-10 | 无锡奥夫特光学技术有限公司 | Preparation method and preparation equipment of tantalum nitride film resistor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110983276A (en) * | 2019-12-27 | 2020-04-10 | 无锡奥夫特光学技术有限公司 | Preparation method and preparation equipment of tantalum nitride film resistor |
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