CN111180294A - Processing substrate and processing technology of getter film - Google Patents
Processing substrate and processing technology of getter film Download PDFInfo
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- CN111180294A CN111180294A CN201811330616.XA CN201811330616A CN111180294A CN 111180294 A CN111180294 A CN 111180294A CN 201811330616 A CN201811330616 A CN 201811330616A CN 111180294 A CN111180294 A CN 111180294A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/18—Means for absorbing or adsorbing gas, e.g. by gettering
- H01J7/183—Composition or manufacture of getters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/18—Means for absorbing or adsorbing gas, e.g. by gettering
- H01J7/186—Getter supports
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Abstract
The invention provides a processing substrate of a getter film, which comprises: a substrate base plate; the substrate base plate is provided with a plurality of groups of hollow grooves, and a plurality of getter terminals are arranged in an area defined by each group of hollow grooves; a hard mask plate covering the substrate base plate; the hard mask plate is provided with a plurality of openings, so that the area surrounded by each group of hollow-out grooves is not covered by the hard mask plate. The invention also provides a processing technology of the getter film, which comprises the following steps: a) depositing a getter material on a processing substrate, and cutting to obtain a getter film; the processing substrate is the processing substrate in the technical scheme. Compared with the prior art, the processing technology provided by the invention adopts the specific processing substrate, avoids photoetching and etching processes, stripping process and scribing process, reduces equipment investment, is beneficial to environmental protection, has short processing period, can realize simple and efficient processing and low-cost mass production of the getter film, and improves the gas absorption performance of the getter film.
Description
Technical Field
The invention relates to the technical field of vacuum electronic devices and vacuum instruments, in particular to a processing substrate and a processing technology of a getter film.
Background
With the development and the demand of many fields such as electronics, military and national defense, atomic energy, light industry, petroleum and the like, the application of vacuum electronic devices and vacuum instruments is more and more extensive, and many vacuum electronic devices and vacuum instrumentsIt is necessary to work in a high vacuum environment. To maintain a high vacuum, e.g. 10-4Pa and above, and a Getter (Getter) is used for maintaining high vacuum after electric or thermal activation.
Getters are generally classified into evaporable getters, non-evaporable getters, and composite getters. For non-evaporable getters, typically zirconium is used as the host (more than 60%), and then one or more metals of titanium, tantalum, thorium, cobalt, vanadium, aluminum, iron are doped, and the getter is sintered using mixed metal powders, or coated with porous and sparse getter thin film materials by evaporation, sputtering, ion beam deposition. However, for miniature electronic devices or miniature vacuum devices, the required getter is becoming more and more miniaturized, and the quality requirement is higher than the requirement of sintering. At present, by means of a microelectronic processing technology of a semiconductor, a photoetching method is used for patterning a getter device, a substrate can be stainless steel, a silicon wafer, ceramic and the like, for example, the conventional getter substrate such as a sheet type getter substrate is processed by the photoetching technology of the semiconductor to etch a required pattern; then using a special tool clamp, putting the special tool clamp into an evaporation or sputtering machine table to deposit a getter film on the substrate, then removing the photoresist by a Lift-off process, and finally cutting the getter device into getter devices by a scribing process for packaging.
Although the method can manufacture almost all required miniaturized getters, almost all procedures of the method use semiconductor process technology, the process is complex and difficult, the processing period is long, photoetching and etching procedures need photoetching machines, the cost is high, and meanwhile, photoresist and developing solution in the photoetching procedure and special etching gas or chemical solution in the dry and wet processes are used, so that environmental problems are caused or environment-friendly treatment and discharge are required; in addition, aiming at different requirements of the getter film, a transmission system or a cavity structure of a deposition film machine table is required to be modified, and a special fixture is designed to deposit the getter film.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a substrate and a process for processing a getter film, which avoid photolithography and etching processes, a lift-off process, and a dicing process, and can achieve simple, efficient, low-cost, and mass production of the getter film, and improve the gettering performance of the getter film.
The invention provides a processing substrate of a getter film, which comprises:
a substrate base plate; the substrate base plate is provided with a plurality of groups of hollow grooves, and a plurality of getter terminals are arranged in an area defined by each group of hollow grooves;
a hard mask plate covering the substrate base plate; the hard mask plate is provided with a plurality of openings, so that the area surrounded by each group of hollow-out grooves is not covered by the hard mask plate.
Preferably, the substrate base plate is a stainless steel plate, a glass sheet or a ceramic sheet; the substrate base plate is 0.02 mm-1 mm thick.
Preferably, the surface of the base substrate is provided with a plurality of pores that do not penetrate the base substrate.
Preferably, the getter terminal has a size of 0.5mm to 5mm and is circular, rectangular or annular in shape.
Preferably, the method further comprises the following steps:
a tray on which the substrate base plate is placed;
the button magnet is arranged on the hard mask plate and used for fixing the tray, the substrate base plate and the hard mask plate which are sequentially stacked.
The invention also provides a processing technology of the getter film, which comprises the following steps:
a) depositing a getter material on a processing substrate, and cutting to obtain a getter film;
the processing substrate is the processing substrate in the technical scheme.
Preferably, the getter material in step a) comprises the following components:
60-85 wt% of zirconium;
15 wt% -40 wt% of doped metal;
the doping metal is selected from one or more of vanadium, cobalt, lanthanum, cerium, iron and aluminum.
Preferably, the deposition mode in the step a) is sputtering deposition or evaporation deposition;
the deposition temperature is 20-300 ℃, the pressure is 10-50 mTorr, and the thickness is 0.5-2.5 μm.
Preferably, before depositing the getter material on the process substrate in step a), the method further comprises:
providing an adhesion layer on the processing substrate; the adhesion layer comprises one or more of titanium, cobalt and nickel; the thickness of the adhesive layer is
Preferably, after the step of depositing the getter material on the processing substrate in step a), the method further comprises:
arranging a protective layer on the surface of the getter film obtained by deposition; the protective layer is a thin titanium protective layer or a thin nickel protective layer; the thickness of the protective layer is
The invention provides a processing substrate of a getter film, which comprises: a substrate base plate; the substrate base plate is provided with a plurality of groups of hollow grooves, and a plurality of getter terminals are arranged in an area defined by each group of hollow grooves; a hard mask plate covering the substrate base plate; the hard mask plate is provided with a plurality of openings, so that the area surrounded by each group of hollow-out grooves is not covered by the hard mask plate. The invention also provides a processing technology of the getter film, which comprises the following steps: a) depositing a getter material on a processing substrate, and cutting to obtain a getter film; the processing substrate is the processing substrate in the technical scheme. Compared with the prior art, the processing technology provided by the invention adopts the specific processing substrate, avoids photoetching and etching processes, stripping process and scribing process, reduces equipment investment, is beneficial to environmental protection, has short processing period, thus realizing simple and efficient processing and low-cost mass production of the getter film and improving the air suction performance of the getter film; the processed getter film can be used on devices such as an Uncooled infrared focal plane detector (Uncooled infrared focal plane array detector), TeraHertz (TeraHertz), micro-electro mechanical systems (MEMS) Gyroscope (gyro) and the like, or other vacuum instruments such as a vacuum relay, a gas laser, a suction vacuum pump, a vacuum heat preservation container, an x light pipe, a magnetron and the like. Experimental results show that the getter film obtained by the processing technology provided by the invention has a porous columnar structure, and the gas absorption performance of unit area is improved by 20-100%.
In addition, the processing technology of the getter film provided by the invention has the advantages of small equipment investment, no environmental pollution and suitability for large-scale mass production.
Drawings
Fig. 1 is a schematic structural diagram of a processed substrate of a getter film provided by an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a processed substrate of a getter film provided in embodiment 1 of the present invention;
fig. 3 is a schematic structural diagram of a substrate base plate in a processing substrate of a getter film provided by an embodiment of the invention;
fig. 4 is a schematic structural diagram of a getter terminal in a processing substrate of a getter film according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a hard mask in a processing substrate of a getter film according to an embodiment of the present invention;
fig. 6 is a schematic structural view of a vacuum absorption plate of a substrate base plate in the processing process of the getter film processing substrate according to the embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a processing substrate of a getter film, which comprises:
a substrate base plate; the substrate base plate is provided with a plurality of groups of hollow grooves, and a plurality of getter terminals are arranged in an area defined by each group of hollow grooves;
a hard mask plate covering the substrate base plate; the hard mask plate is provided with a plurality of openings, so that the area surrounded by each group of hollow-out grooves is not covered by the hard mask plate.
Referring to fig. 1 and 3 to 5, in which fig. 1 is a schematic structural diagram of a substrate for processing a getter film provided in an embodiment of the present invention, fig. 3 is a schematic structural diagram of a substrate base plate in the substrate for processing the getter film provided in the embodiment of the present invention, fig. 4 is a schematic structural diagram of a getter terminal in the substrate for processing the getter film provided in the embodiment of the present invention, and fig. 5 is a schematic structural diagram of a hard mask in the substrate for processing the getter film provided in the embodiment of the present invention; in the figure, 1 is a substrate, 2 is a hollow groove, 3 is a getter terminal, 4 is a hard mask, and 5 is an opening.
In the present invention, the substrate is preferably a stainless steel plate, a glass plate, or a ceramic plate, and more preferably a stainless steel plate. In a preferred embodiment of the present invention, the substrate base plate is a stainless steel plate, and is specifically processed from 301 stainless steel, 304 stainless steel or 316L stainless steel. The source of the substrate base plate is not particularly limited in the invention, and the substrate base plate is processed according to the specification requirements by using commercially available stainless steel, glass sheets and ceramics which are well known to those skilled in the art.
In the present invention, the thickness of the substrate base is preferably 0.02mm to 1mm, and more preferably 0.03mm to 0.06 mm. The length and the width of the substrate base plate are not specially limited, and the substrate base plate is designed and cut according to the specification of the getter film. In the present invention, the cutting mode is preferably laser cutting. In a preferred embodiment of the present invention, the substrate base plate has a thickness of 0.02mm to 0.1 mm; in order to ensure that the ultrathin substrate base plate (such as an ultrathin stainless steel film sheet) cannot be cut well due to displacement generated by cutting or inaccurate laser focusing caused by integral deformation caused by cutting reasons in the cutting process, the invention preferably adopts a vacuum absorption disc to fix the stainless steel plate on a laser cutting platform; referring to fig. 6, fig. 6 is a schematic structural view of a vacuum absorption plate of a substrate base plate in a processing process of a getter film processing substrate according to an embodiment of the present invention, wherein 8 is the vacuum absorption plate, and 9 is a vacuum absorption hole; the vacuum adsorption holes are uniformly distributed on the vacuum adsorption plate, and meanwhile, when the vacuum adsorption holes are arranged, each vacuum adsorption hole is ensured to be aligned to the non-hollowed-out area of the stainless steel plate, so that the technical problem is solved.
In a preferred embodiment of the present invention, the substrate base plate has a thickness of 0.03 to 0.06 mm; the surface of the substrate base plate is preferably provided with a plurality of pores which do not penetrate through the substrate base plate, so that the surface area of the substrate base plate per unit area is increased, and the air suction capacity of the processed getter film per unit area is further improved.
In the invention, the substrate base plate is provided with a plurality of groups of hollow grooves, and a plurality of getter terminals are arranged in an area enclosed by each group of hollow grooves. In the invention, each group of hollow-out grooves is of a discontinuous annular hollow-out structure, so that the area surrounded by each group of hollow-out grooves is ensured not to be separated from the substrate, and a group of opposite discontinuous parts is preferably arranged, so that the firmness of the area surrounded by each group of hollow-out grooves on the substrate is ensured. In a preferred embodiment of the present invention, an area enclosed by each group of hollow-out grooves is rectangular, and the positions of each group of hollow-out grooves which are opposite to each other are discontinuous, so as to form a left half hollow-out structure and a right half hollow-out structure; meanwhile, two adjacent half-edge hollow structures in two adjacent groups of hollow grooves can be combined into an I-shaped hollow structure; as shown in fig. 3.
In the present invention, the size of the getter terminal is preferably 0.5mm to 5 mm; the getter terminal is preferably circular, rectangular or annular in shape; as shown in fig. 4. In a preferred embodiment of the present invention, the getter terminal has a rectangular shape, and the specific specification is 1mm × 1mm, 1.5mm × 1mm, or 2mm × 1 mm. The number of the getter terminals is not particularly limited, and the getter terminals are uniformly distributed in the area defined by each group of the hollow grooves.
In the invention, the hard mask plate covers the substrate base plate. In the invention, the hard mask is preferably a stainless steel plate; the thickness of the hard mask is preferably 0.02 mm-0.5 mm, and more preferably 0.1 mm-0.4 mm. In the invention, the thickness of the hard mask is determined according to the size and the precision requirement of the absorbent film pattern: the higher the precision is, the smaller the graph is, and the thinner the used hard mask is; conversely, the thicker.
In the invention, the hard mask is preferably provided with a plurality of openings, so that the area surrounded by each group of hollow-out grooves is not covered by the hard mask. In the invention, the size of the opening is preferably larger than the area surrounded by the corresponding group of hollow grooves and smaller than the maximum size of the hollow structure of the group of hollow grooves; so that the edge of the opening is located in the hollow structure of the group of hollow grooves corresponding to the opening, as shown in fig. 1. In a preferred embodiment of the present invention, the hard mask is thin (for example, 0.02mm to 0.08mm in thickness), and the getter terminal on the substrate is warped due to stress, so that the opening of the hard mask needs to be properly extended until the edge of the opening is located in the hollow structure of the corresponding group of hollow grooves, so that the getter terminal is flattened during the process of depositing the getter film.
In the present invention, the substrate preferably further includes:
a tray on which the substrate base plate is placed;
the button magnet is arranged on the hard mask plate and used for fixing the tray, the substrate base plate and the hard mask plate which are sequentially stacked.
In the present invention, the tray is used to place the substrate base plate, thereby facilitating the transfer of the processing substrate. In the preferred embodiment of the invention, a Physical Vapor Deposition (PVD) sputtering machine is adopted, and the tray is a base body with the size larger than that of the processing substrate; in another preferred embodiment of the invention, an evaporation table platform is adopted, and the tray is a planetary tray of the evaporation table.
In the invention, the tray, the substrate base plate and the hard mask plate which are stacked together can generate relative displacement in the transmission process, and the substrate base plate and the hard mask plate are thin and easy to warp; according to the invention, the button magnet is preferably arranged on the hard mask plate, so that the tray, the substrate base plate and the hard mask plate which are sequentially stacked are clung together. In the present invention, the number of the button magnets is preferably 2 to 8, and more preferably 4; the hard mask plate is uniformly arranged on the hard mask plate, so that a good fixing effect is realized.
The invention also provides a processing technology of the getter film, which comprises the following steps:
a) depositing a getter material on a processing substrate, and cutting to obtain a getter film;
the processing substrate is the processing substrate in the technical scheme.
The present invention begins with the deposition of getter material on a process substrate. In the present invention, the getter material preferably comprises the following components:
60-85 wt% of zirconium;
15 wt% -40 wt% of doped metal;
more preferably:
70-80 wt% of zirconium;
20 wt% -30 wt% of doped metal. In the present invention, the doping metal is preferably selected from one or more of vanadium, cobalt, lanthanum, cerium, iron and aluminum. In a preferred embodiment of the present invention, the doping metal is a metal oxide having a mass ratio of 1: 3: 1 vanadium, cobalt and titanium; in another preferred embodiment of the present invention, the doping metal is a metal oxide having a mass ratio of 1: 1: 3 vanadium, iron and cobalt. The source of the getter material is not particularly limited in the present invention, and commercially available getter materials of the above composition well known to those skilled in the art may be used.
In the present invention, the processing substrate is the processing substrate described in the above technical solution, and details are not described herein. In the present invention, before depositing the getter material on the processing substrate, it is preferable that the method further comprises:
and carrying out pretreatment on the processing substrate. In the present invention, the pretreatment is preferably a cleaning treatment and/or a baking treatment. In the present invention, the cleaning process preferably includes:
and cleaning the processing substrate by oxalic acid or other weak acids, dehydrating by using Isopropanol (IPA), carrying out ultrasonic or megasonic treatment, and finally carrying out reactive sputtering or ion beam etching to obtain the cleaned processing substrate.
In the present invention, the temperature of the baking treatment is preferably 150 to 350 ℃, and more preferably 200 ℃; the baking time is preferably 1min to 30min, and more preferably 5min to 10 min.
The method can ensure that the getter film obtained in the subsequent deposition process has better adhesion performance by adopting the pretreatment, and can also remove gas adsorbed on the surface of the processed substrate.
After the pretreatment of the processing substrate is completed, the present invention preferably further comprises:
an adhesion layer is disposed on the processing substrate. The adhesion layer is arranged to increase the adhesion of the getter film obtained in the subsequent deposition process, and the dense adsorption layer can effectively reduce the effect of the poisoning effect caused by the residual gas of the processed substrate and is also beneficial to improving the specific surface area of the getter film, so that better getter performance is obtained. In the present invention, the adhesion layer preferably includes one or more of titanium, cobalt, and nickel; in a preferred embodiment of the invention, the adhesion layer is titanium; in another preferred embodiment of the present invention, the adhesion layer is titanium and cobalt; in another preferred embodiment of the present invention, the adhesion layer is titanium, cobalt and nickel.
In the present invention, the thickness of the adhesion layer is preferably
More preferably
In the invention, the deposition mode is preferably sputtering deposition or evaporation deposition; respectively using a PVD sputtering station and an evaporation station known to those skilled in the art. In the present invention, the deposition temperature is preferably 20 to 300 ℃. In the present invention, the pressure of the deposition is preferably 10mTorr to 50mTorr, more preferably 15mTorr to 35 mTorr; the pressure is higher than that of normal sputtering deposition or evaporation deposition, which is beneficial to the formation of a porous columnar structure of the getter film and increases the air suction capacity of the getter film per unit area.
In the present invention, the thickness of the deposition is preferably 0.5 to 2.5 μm, more preferably 1 to 2 μm.
In the present invention, after depositing the getter material on the processing substrate, it is preferable that the method further comprises:
and arranging a protective layer on the surface of the getter film obtained by deposition. The protective layer is arranged to effectively reduce the surface oxidation degree of the getter film, improve the air suction performance of the film and be beneficial to increasing the effective storage time of the getter. In the present invention, the protective layer is preferably a thin titanium protective layer or a thin nickel protective layer. In the present invention, the thickness of the protective layer is preferably set to be equal to
In the present invention, the deposition preferably comprises a two-sided deposition of the getter material on the process substrate: and after the getter material is deposited on one surface of the processing substrate, the processing substrate is transported or taken out, and the getter material is deposited on the other surface of the processing substrate to finish the whole deposition process.
After the deposition process is finished, the processing substrate is taken down, and the getter film is obtained after cutting and can be used. In the present invention, the cutting means is preferably a scissors cut, a cutter cut or a laser cut. According to the invention, the getter film obtained by adopting the specific processing substrate is in an easy-to-cut shape, and complex scribing equipment and complex scribing process are not needed for cutting.
In addition, the processing substrate can be repeatedly used after being cleaned.
The processing technology provided by the invention adopts the specific processing substrate, avoids photoetching and etching technologies, stripping technology and scribing technology, reduces equipment investment, is beneficial to environmental protection, has short processing period, can realize simple and efficient processing and low-cost mass production of the getter film, and improves the gas absorption performance of the getter film; the processed getter film can be used on devices such as an Uncooled infrared focal plane detector (Uncooled infrared focal plane array detector), TeraHertz (TeraHertz), micro-electro mechanical systems (MEMS) Gyroscope (gyro) and the like, or other vacuum instruments such as a vacuum relay, a gas laser, a suction vacuum pump, a vacuum heat preservation container, an x light pipe, a magnetron and the like.
The invention provides a processing substrate of a getter film, which comprises: a substrate base plate; the substrate base plate is provided with a plurality of groups of hollow grooves, and a plurality of getter terminals are arranged in an area defined by each group of hollow grooves; a hard mask plate covering the substrate base plate; the hard mask plate is provided with a plurality of openings, so that the area surrounded by each group of hollow-out grooves is not covered by the hard mask plate. The invention also provides a processing technology of the getter film, which comprises the following steps: a) depositing a getter material on a processing substrate, and cutting to obtain a getter film; the processing substrate is the processing substrate in the technical scheme. Compared with the prior art, the processing technology provided by the invention adopts the specific processing substrate, avoids photoetching and etching processes, stripping process and scribing process, reduces equipment investment, is beneficial to environmental protection, has short processing period, thus realizing simple and efficient processing and low-cost mass production of the getter film and improving the air suction performance of the getter film; the processed getter film can be used on devices such as an Uncooled infrared focal plane detector (Uncooled infrared focal plane array detector), TeraHertz (TeraHertz), micro-electro mechanical systems (MEMS) Gyroscope (gyro) and the like, or other vacuum instruments such as a vacuum relay, a gas laser, a suction vacuum pump, a vacuum heat preservation container, an x light pipe, a magnetron and the like. Experimental results show that the getter film obtained by the processing technology provided by the invention has a porous columnar structure, the improvement of the gas absorption performance in unit area is related to the porous columnar structure and the surface convex-concave structure, and the performance can be generally improved by 20-100%.
In addition, the processing technology of the getter film provided by the invention has the advantages of small equipment investment, no environmental pollution and suitability for large-scale mass production.
To further illustrate the present invention, the following examples are provided for illustration. The getter material used in the following examples of the invention consists of 75 wt% of zirconium, 25 wt% of doping metals (vanadium 5 wt%, cobalt 15 wt%, titanium 5 wt%).
Example 1
Referring to fig. 2 to 3 and 5, in which fig. 2 is a schematic structural diagram of a processing substrate of a getter film provided in embodiment 1 of the present invention, fig. 3 is a schematic structural diagram of a substrate base plate in the processing substrate of the getter film provided in embodiment 1 of the present invention, and fig. 5 is a schematic structural diagram of a hard mask in the processing substrate of the getter film provided in embodiment 1 of the present invention; in the figure, 1 is a substrate, 2 is a hollow groove, 3 is a getter terminal, 4 is a hard mask, 5 is an opening, 6 is a tray, and 7 is a button magnet.
The substrate base plate is a 304 stainless steel plate, the thickness of the substrate base plate is 0.8mm, and fine holes which do not penetrate through the substrate base plate are distributed on the surface of the substrate base plate; the substrate base plate is provided with 5 groups of hollow grooves which are enclosed into 5 rectangular areas, and getter terminals with the size of 1.5mm multiplied by 1mm are fully distributed in each rectangular area; the hard mask plate is a stainless steel plate with the thickness of 0.2mm, 5 holes corresponding to the 5 groups of hollow grooves are formed in the hard mask plate, the size of each hole is slightly larger than that of the rectangular area, and the edge of each hole is located in the hollow structure of the corresponding hollow groove.
The getter film is processed by adopting the processing substrate, the deposition equipment is a PVD sputtering machine, and the method comprises the following specific steps:
(1) cleaning the processing substrate by oxalic acid, dehydrating by isopropyl alcohol (IPA), carrying out ultrasonic treatment, and finally carrying out reactive sputtering etching to obtain a cleaned processing substrate; and then, conveying the cleaned processing substrate to a process cavity of a PVD sputtering machine, and baking for 5min at 200 ℃ to obtain a pretreated processing substrate.
(2) Introducing Ar with the flow of 150sccm and the power of a PVD sputtering machine table of 800W; sputtering an adhesion layer (Ti) on the preprocessed processing substrate obtained in the step (1)
/Co
/Ni
) Then depositing a getter material on the processing substrate, wherein the deposition temperature is 160 ℃, the deposition pressure is 25mTorr, and the deposition diameter is 1.5 mu m; finally, a layer with the thickness of
The thin titanium protective layer finishes the deposition on one side of the processed substrate; and taking out the processing substrate, repeating the process, and depositing the getter material on the other surface of the processing substrate to finish the whole deposition process.
(3) And taking down the processed substrate, and cutting to obtain the high-quality getter film.
Through detection, the getter film obtained in the embodiment 1 of the invention forms a porous columnar structure, and the gas absorption performance of the unit area is improved by 50%.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A processed substrate of getter film comprising:
a substrate base plate; the substrate base plate is provided with a plurality of groups of hollow grooves, and a plurality of getter terminals are arranged in an area defined by each group of hollow grooves;
a hard mask plate covering the substrate base plate; the hard mask plate is provided with a plurality of openings, so that the area surrounded by each group of hollow-out grooves is not covered by the hard mask plate.
2. The processing substrate according to claim 1, wherein the substrate base plate is a stainless steel plate, a glass plate, or a ceramic plate; the substrate base plate is 0.02 mm-1 mm thick.
3. The processing substrate according to claim 1, wherein the surface of the substrate base is provided with a plurality of fine holes that do not penetrate the substrate base.
4. The processing substrate according to claim 1, wherein the getter terminal has a size of 0.5mm to 5mm and a shape of a circle, a rectangle or a ring.
5. A processing substrate according to any one of claims 1 to 4, further comprising:
a tray on which the substrate base plate is placed;
the button magnet is arranged on the hard mask plate and used for fixing the tray, the substrate base plate and the hard mask plate which are sequentially stacked.
6. The processing technology of the getter film comprises the following steps:
a) depositing a getter material on a processing substrate, and cutting to obtain a getter film;
the processing substrate is the processing substrate according to any one of claims 1 to 5.
7. The process according to claim 6, wherein said getter material in step a) comprises the following components:
60-85 wt% of zirconium;
15 wt% -40 wt% of doped metal;
the doping metal is selected from one or more of vanadium, cobalt, lanthanum, cerium, iron and aluminum.
8. The process according to claim 6, wherein the deposition in step a) is a sputter deposition or an evaporation deposition;
the deposition temperature is 20-300 ℃, the pressure is 10-50 mTorr, and the thickness is 0.5-2.5 μm.
9. The process of any one of claims 6 to 8, wherein prior to depositing the getter material on the process substrate in step a), further comprising:
providing an adhesion layer on the processing substrate; the adhesion layer comprises one or more of titanium, cobalt and nickel; the thickness of the adhesive layer is
10. The process of any one of claims 6 to 8, wherein after depositing the getter material on the process substrate in step a), further comprising:
arranging a protective layer on the surface of the getter film obtained by deposition; the protective layer is a thin titanium protective layer or a thin nickel protective layer; the thickness of the protective layer is
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| CN113764571A (en) * | 2021-09-07 | 2021-12-07 | 绍兴中芯集成电路制造股份有限公司 | Processing method of substrate with aluminum nitride film layer and preparation method of filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113764571A (en) * | 2021-09-07 | 2021-12-07 | 绍兴中芯集成电路制造股份有限公司 | Processing method of substrate with aluminum nitride film layer and preparation method of filter |
| CN113764571B (en) * | 2021-09-07 | 2024-01-23 | 绍兴中芯集成电路制造股份有限公司 | Processing method of substrate with aluminum nitride film layer and preparation method of filter |
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