CN106653872B - A kind of solar cell of anti-PID effects - Google Patents
A kind of solar cell of anti-PID effects Download PDFInfo
- Publication number
- CN106653872B CN106653872B CN201611075863.0A CN201611075863A CN106653872B CN 106653872 B CN106653872 B CN 106653872B CN 201611075863 A CN201611075863 A CN 201611075863A CN 106653872 B CN106653872 B CN 106653872B
- Authority
- CN
- China
- Prior art keywords
- layer
- thickness
- refractive index
- sinx
- aluminium oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000000694 effects Effects 0.000 title claims abstract description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of solar cells of anti-PID effects, it includes crystalline silicon substrate, matte, diffusion emitter knot and four layers of passivated reflection reducing being sequentially deposited in crystalline silicon substrate and penetrates film, and first layer is amorphous silicon layer, and thickness is 5 8nm, the second layer is SiNx, refractive index is 2.25 2.35, and thickness is 6 9nm, and the refractive index of third layer SiNx is 1.95 2.05, thickness is 60 70nm, 4th layer is aluminium oxide, and refractive index is 1.75 1.85, and thickness is 3 9nm.The anti-PID effects effect of the present invention is good, and can be produced on the basis of conventional silicon nitride filming equipment, at low cost.
Description
Technical field
The present invention relates to area of solar cell more particularly to a kind of solar cells of anti-PID effects.
Background technology
Crystal silicon solar energy battery does not discharge and emits any harmful substance in use；There is no moving component, nothing
Noise, it is light-weight, small, have modular characteristics, dispersible to set on the spot, the construction period is short, long working life 20-25
Year, easy maintenance, it is reliable the advantages that, be a kind of very good renewable clear energy sources.In practical applications due to list
A crystal silicon solar component output voltage and power are relatively low, it is impossible to meet life or production needs, so need will be multiple
Component concatenates.Under conditions of outline border ground connection, multiple component concatenations will lead to outline border, and there are high reverse bias with cell piece surface.
And in long-term use, damp and hot environment is inevitable, these extreme conditions, which are combined together, to be formed
PID (Potential Induced Degradation, potential induction attenuation) test condition, that is, cell pieces are to the bias of outline border
1000V, 85 DEG C and 85% relative humidity, the testing time is generally 100h.PID effects are primarily referred to as in high bias, high temperature,
Under conditions of high humility, the metal ion in assembly surface encapsulating material soda lime glass is moved to cell piece surface, in battery
Piece surface forms localized clusters so that a kind of effect of cell piece failure.People are mainly considered to connect by changing component at present
Ground mode replaces cell piece component package material, develops the technologies such as the cell piece of anti-PID to eliminate PID effects.
Invention content
The technical problems to be solved by the invention are the defects of overcoming the prior art, provide a kind of sun of anti-PID effects
It can battery.
To solve the above-mentioned problems, the technical solution adopted by the present invention is：A kind of solar cell of anti-PID effects, packet
Include silicon chip, matte, diffusion emitter knot and electrode, which is characterized in that there are four layers of passivated reflection reducing to penetrate on the diffusion emitter knot surface
Film, first layer are amorphous silicon layer, thickness 5-8nm, second layer SiNx, refractive index 2.25-2.35, thickness 6-9nm,
It is aluminium oxide that the refractive index of three layers of SiNx, which is 1.95-2.05, thickness 60-70nm, the 4th layers, and refractive index 1.75-1.85 is thick
It spends for 3-9nm.
Preferably, the amorphous silicon layer is is prepared using tubular type or board-like plasma chemical vapor deposition process
Film.
Preferably, the SiNx is prepared using tubular type or board-like plasma chemical vapor deposition process
Film.
Preferably, the aluminium oxide is prepared into for plasma enhanced chemical vapor deposition method or atomic layer deposition method
The aluminium oxide arrived.
Preferably, the silicon chip is polysilicon chip.
Preferably, the first layer is amorphous silicon layer, and thickness 7nm, second layer SiNx, refractive index 2.3, thickness
For 9nm, it is aluminium oxide that the refractive index of third layer SiNx, which is 2.0, thickness 65nm, the 4th layer, refractive index 1.8, and thickness is
4nm。
The cell piece of the present invention increases the anti-PID effects being deposited on photic zone compared with conventional crystal silicon cell
Layer, and by the Proper Match of the material of each film layer, refractive index and thickness, effectively eliminate PID effects.
Description of the drawings
Fig. 1 is a kind of solar battery structure schematic diagram of anti-PID effects of the present invention.
Specific embodiment
With reference to specific embodiments and the drawings, the present invention is described in further detail.
Embodiment 1：
A kind of preparation method following steps of the solar cell of anti-PID effects of the present invention：
Step 1, preheating, crystalline silicon substrate enter reaction cavity and first carry out heated at constant temperature, and temperature is made to reach the reaction of setting
400-500 DEG C of temperature；
Step 2, first layer amorphous silicon membrane deposition, the flow that the flow of NH3 is set as 0, SiH4 are set as 1800sccm, when
Between be set as 15s, 1 surface of silicon chip formed 5-8nm anti-PID densifications amorphous silicon layer 2
Step 3, second layer thin film deposition are passed through 500~1000sccm/ of reaction gas NH3 and SiH4, SiH4 flow
Min, NH3 1000~4000sccm/min of flow, holding pressure constant state, pressure limit 0.5-1.5Torr, plated film time 100
~150s；
Step 3, third layer thin film deposition are passed directly into reaction gas, 500~1000sccm/ of SiH4 flows to reaction chamber
Min, NH3 6000~7000sccm/min of flow, 1.0~2.0Torr of pressure limit, plated film time 250s-500s；
Step 4, the 4th layer of deposited aluminum oxide thin film, aluminum oxide film is prepared using atomic layer deposition.
The present invention is a kind of solar cell of anti-PID effects, as shown in Figure 1, it includes silicon chip 5, matte, diffusion emitter
Knot and electrode have four layers of passivated reflection reducing to penetrate film on the diffusion emitter knot surface, and first layer is amorphous silicon layer 4, thickness 5nm,
The second layer is SiNx3, and refractive index 2.35, the refractive index of thickness 6nm, third layer SiNx2 are 2.05, thickness 70nm, the
Four layers be aluminium oxide 1, refractive index 1.85, thickness 9nm.
Embodiment 2
The present invention is a kind of solar cell of anti-PID effects, including silicon chip, matte, diffusion emitter knot and electrode, is being sent out
Penetrating knot surface has four layers of passivated reflection reducing to penetrate film, and first layer is amorphous silicon layer, thickness 7nm, second layer SiNx, and refractive index is
It is aluminium oxide that the refractive index of 2.3, thickness 9nm, third layer SiNx, which are 2.0, thickness 65nm, the 4th layer, refractive index 1.8,
Thickness is 4nm.
Embodiment 3
The present invention is a kind of solar cell of anti-PID effects, including silicon chip, matte, diffusion emitter knot and electrode, is being sent out
Penetrating knot surface has four layers of passivated reflection reducing to penetrate film, and first layer is amorphous silicon layer, thickness 8nm, second layer SiNx, and refractive index is
The refractive index of 2.25, thickness 7nm, third layer SiNx are that 1.95, thickness 60nm, the 4th layer are aluminium oxide, and refractive index is
1.75, thickness 3nm.
Comparative example
A kind of solar cell of anti-PID effects, including silicon chip, matte, diffusion emitter knot and electrode, on emitter junction surface
Have one layer of passivated reflection reducing penetrate film SiNx, the antireflective coating SiNx refractive index be 2.0-2.1, film thickness 80-90nm.
By the cell piece of above-mentioned comparative example and embodiment, component is packaged into using identical encapsulating material, in -1000V
Bias under carry out 96h PID after, it is as a result as follows：
| Experimental state | Power/W before PID | Power/W after PID | Attenuation |
| Comparative example | 248.1 | 198.4 | 20% |
| Embodiment 1 | 248.1 | 243.3 | 1.85% |
| Embodiment 2 | 248 | 243 | 2.00% |
| Embodiment 3 | 248 | 242.8 | 2.10% |
Test data is less than 5% after PID96h, illustrates to fully meet using this coating process and eliminates PID effects.
The battery of the present invention increases the anti-PID effect layers being deposited on photic zone compared with conventional crystal silicon cell,
And by the Proper Match of each film layer, material, refractive index and thickness, effectively eliminate PID effects.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously
Cannot the limitation to the scope of the claims of the present invention therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, under the premise of not departing from the present invention, various modifications and improvements can be made, these belong to the protection model of the present invention
It encloses.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (1)
1. a kind of solar cell of anti-PID effects, including silicon chip, matte, diffusion emitter knot and electrode, which is characterized in that
The diffusion emitter knot surface has four layers of passivated reflection reducing to penetrate film, and first layer is amorphous silicon layer, thickness 5-8nm, and the second layer is
The refractive index of SiNx, refractive index 2.25-2.35, thickness 6-9nm, third layer SiNx are 1.95-2.05, thickness 60-
70nm, the 4th layer is aluminium oxide, refractive index 1.75-1.85, thickness 3-9nm, the amorphous silicon layer be using tubular type or
The film that board-like plasma chemical vapor deposition process is prepared, the SiNx are using tubular type or board-like plasma chemical gas
The film that phase deposition method is prepared, the aluminium oxide are plasma enhanced chemical vapor deposition method or atomic layer deposition method
The aluminium oxide being prepared, the silicon chip are polysilicon chip, and the first layer is amorphous silicon layer, and thickness 7nm, the second layer is
SiNx, refractive index 2.3, it is aluminium oxide that the refractive index of thickness 9nm, third layer SiNx, which are 2.0, thickness 65nm, the 4th layer,
Refractive index is 1.8, thickness 4nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611075863.0A CN106653872B (en) | 2016-11-25 | 2016-11-25 | A kind of solar cell of anti-PID effects |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611075863.0A CN106653872B (en) | 2016-11-25 | 2016-11-25 | A kind of solar cell of anti-PID effects |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106653872A CN106653872A (en) | 2017-05-10 |
| CN106653872B true CN106653872B (en) | 2018-06-29 |
Family
ID=58814458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611075863.0A Active CN106653872B (en) | 2016-11-25 | 2016-11-25 | A kind of solar cell of anti-PID effects |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106653872B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494262A (en) * | 2018-12-28 | 2019-03-19 | 苏州腾晖光伏技术有限公司 | A kind of crystal silicon solar batteries double-layer reflection reducing coating structure and its deposition method |
| CN109935647B (en) * | 2019-03-29 | 2021-09-14 | 天合光能股份有限公司 | Solar cell and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102122674B (en) * | 2011-01-14 | 2013-01-09 | 中国科学院上海技术物理研究所 | Crystalline silicon solar cell and preparation method thereof |
| CN104868011A (en) * | 2015-03-30 | 2015-08-26 | 无锡帝科电子材料科技有限公司 | Manufacturing method of N type all-aluminum back emitter solar cell and solar cell prepared by the same |
-
2016
- 2016-11-25 CN CN201611075863.0A patent/CN106653872B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106653872A (en) | 2017-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2068373B1 (en) | Solar cell module | |
| US20100098840A1 (en) | Method of manufacturing back electrode of silicon bulk solar cell | |
| US9013018B2 (en) | Multilayer moisture barrier | |
| CN102424533B (en) | Difunctional coated glass capable of reducing visible light reflection and reflecting near infrared ray and preparation method thereof | |
| WO2014153973A1 (en) | Preparation process for anti-potential induced degradation solar cell | |
| CN106471625A (en) | Using crystalline silicon, solaode optical receiving surface is passivated | |
| WO2014032457A1 (en) | Preparing method of anti-reflection film having anti-pid effect | |
| CN106653872B (en) | A kind of solar cell of anti-PID effects | |
| CN104160062B (en) | Silicon-containing film and silicon-containing film forming method | |
| Pomaska et al. | Transparent silicon carbide/tunnel SiO2 passivation for c‐Si solar cell front side: Enabling Jsc> 42 mA/cm2 and iVoc of 742 mV | |
| Zhao et al. | Effects of (i) a‐Si: H deposition temperature on high‐efficiency silicon heterojunction solar cells | |
| CN107154437A (en) | The preparation method of solar battery antireflective film | |
| CN206194747U (en) | Solar wafer of anti PID effect | |
| Özkol et al. | Effective passivation of black silicon surfaces via plasma‐enhanced chemical vapor deposition grown conformal hydrogenated amorphous silicon layer | |
| CN106328723A (en) | Manufacturing method of anti-PID battery piece and photovoltaic component | |
| CN103317792B (en) | Non-vacuum high-temperature solar selective absorption periodic coating and preparation method thereof | |
| CN103794658A (en) | Composite membrane efficient crystalline silicon solar cell and manufacturing method of composite membrane efficient crystalline silicon solar cell | |
| Lopez-Garcia et al. | Ultrathin wide‐bandgap a‐Si: H‐based solar cells for transparent photovoltaic applications | |
| JP2007059484A (en) | Solar cell and method of manufacturing the same | |
| CN103066132B (en) | A kind of double-layer silicon nitride anti-reflecting film for solaode and preparation method thereof | |
| CN107068774A (en) | Solar cell reduced passivation resisting film and preparation method thereof and solar battery sheet | |
| CN104393061B (en) | A kind of crystal silicon solar energy battery antireflective coating and preparation technology thereof | |
| Ding et al. | Light management of PERC solar cell with the front and back dielectric multilayers | |
| CN101958365A (en) | Method for realizing slowly-varying lamination antireflection coating of solar cell | |
| CN203895468U (en) | PID effect resistance solar energy cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201230 Address after: 251700 Huji village, Huji Town, Huimin County, Binzhou City, Shandong Province Patentee after: Huimin xinyihua rope net Co.,Ltd. Address before: 528000 Room 203, 204, 2nd floor, No.1, Neihuan North Road, Yundonghai Avenue, Sanshui District, Foshan City, Guangdong Province Patentee before: Luo Lei |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210512 Address after: No.102, building 14, eurocity, Sihe office, Sishui County, Jining City, Shandong Province 273200 Patentee after: Shandong Puhua Technology Research Co.,Ltd. Address before: 251700 Huji village, Huji Town, Huimin County, Binzhou City, Shandong Province Patentee before: Huimin xinyihua rope net Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230424 Address after: 523000 No. 1, Nange West Road, Daojiao Town, Dongguan City, Guangdong Province Patentee after: Guangdong Quanwei Technology Co.,Ltd. Address before: No.102, building 14, eurocity, Sihe office, Sishui County, Jining City, Shandong Province 273200 Patentee before: Shandong Puhua Technology Research Co.,Ltd. |
|
| TR01 | Transfer of patent right |