CN102176474A - N-type solar battery prepared by film masking process of one multi-purpose film and preparation method of N-type solar battery - Google Patents
N-type solar battery prepared by film masking process of one multi-purpose film and preparation method of N-type solar battery Download PDFInfo
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- CN102176474A CN102176474A CN201110062563XA CN201110062563A CN102176474A CN 102176474 A CN102176474 A CN 102176474A CN 201110062563X A CN201110062563X A CN 201110062563XA CN 201110062563 A CN201110062563 A CN 201110062563A CN 102176474 A CN102176474 A CN 102176474A
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Abstract
The invention relates to the field of an N-type solar battery, particularly the N-type solar battery prepared by a film masking process of one multi-purpose film and a preparation method of the N-type solar battery. The N-type solar battery has the structure that: an n-type straight-pull monocrystalline silicon is used as a substrate, the backside of a silicon sheet is a P-type emitter junction prepared by boron diffusion of a SiO2 and SiNx coated dual-layer passivation film, and the front side of the silicon sheet is a front surface field prepared by phosphorous diffusion and a thin film playing a passivation and reflection reduction role covers on the front surface field. The preparation method of the N-type solar battery comprises the following steps of: with the n-type straight-pull monocrystalline silicon as the substrate, preparing the P-type emitter junction by the boron diffusion firstly, and then etching the P-type emitter junction on the front side; preparing the SiO2 film on the P-type emitter junction on the backside of the silicon sheet, wherein the SiO2 film is not only a mask film for preparing the front surface field by the phosphorous diffusion subsequently, but also the passivation film of the P-type emitter junction; and lastly, preparing the front surface field by the phosphorous diffusion. The invention has the advantages of simple technique process, easy control, low cost and high photoelectric conversion efficiency.
Description
Technical field
The present invention relates to N type area of solar cell, N type solar cell of the mask method preparation that a particularly a kind of film is used more and preparation method thereof.
Background technology
At present, the crystal silicon solar energy battery that domestic each big Sunpower Corp. produces all is a P type silicon substrate, but because n type silicon substrate is comparatively big to the repellence of impurity, and the problem that does not have photo attenuation, can obtain higher efficient in theory, in fact German, the U.S., developed countries such as Japan pay much attention to regenerative resource especially solar energy resources, are obtaining very big breakthrough aspect the research of n type solar cell and the production.Announce that as German Fraunhofer solar energy system research institute (Fraunhofer ISE) what this mechanism developed is the solar cell of matrix with n type monocrystalline silicon, its conversion efficiency has reached 23.4%.The n type back contact solar cell of U.S. Sunpower company, its peak efficiency reaches 24.3%, and it has realized volume production for many years, in addition, the HIT battery of SANYO GS company, its conversion efficiency reaches 23%, and volume production, but, said n type solar battery process process complexity, cost height.Under these circumstances, the N type crystal-silicon solar cell meaning of research and the suitable large-scale production of production is very great.
Summary of the invention
Technical problem to be solved by this invention is: N type solar cell of a kind of suitable large-scale industrial production and preparation method thereof is provided.
The technical solution adopted for the present invention to solve the technical problems is: the N type solar cell of the mask method preparation that an a kind of film is used more, with n type pulling of silicon single crystal is matrix, silicon chip back is the P type emitter junction that is coated with the boron diffusion preparation of passivating film, the front of silicon chip is the front-surface field of phosphorous diffusion preparation, is coated with the film of passivation and antireflective effect on the front-surface field.
The passivating film at the silicon chip back side is SiO2 and SiNx dual layer passivation film, and the SiNx passivating film is at the skin of SiO2 film.
The mask method that an a kind of film is used more prepares the method for N type solar cell, with n type pulling of silicon single crystal is matrix, at first prepare P type emitter junction by boron diffusion, etch away positive P type emitter junction then, on the P at silicon chip back side type emitter junction, make the SiO2 film, this SiO2 film promptly is the mask that follow-up phosphorous diffusion prepares front-surface field, is again the passivating film of P type emitter junction, prepares front-surface field by phosphorous diffusion at last.The invention has the beneficial effects as follows: technical process is simple, control easily, and cost is low, the photoelectric conversion efficiency height.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples;
Fig. 1 is a battery structure schematic diagram of the present invention;
Among the figure, 1. matrix, 2.P type emitter junction, 3. front-surface field, 4.SiO2 film, 5.SiNx passivating film, 6.SiNx film.
Embodiment
The N type solar cell of the mask method preparation that an a kind of film is as shown in Figure 1 used more, with n type pulling of silicon single crystal is matrix 1, silicon chip back is the P type emitter junction 2 that is coated with the boron diffusion preparation of SiO2 and SiNx dual layer passivation film, and SiNx passivating film 5 is at the skin of SiO2 film 4 in the dual layer passivation film.The front of silicon chip is the front-surface field 3 of phosphorous diffusion preparation, is coated with the film of passivation and antireflective effect on the front-surface field 3.
Specifically be achieved in that
A) n type pulling of crystals silicon chip surface forms positive pyramid suede structure to reduce reflection;
B) boron diffusion source prepares P type emitter junction 2, and square resistance is 20-150ohm/Sq;
C) sour mixed liquor or laser or corrosivity slurry etch away positive P type emitter junction;
D) BSG is removed in HF acid;
E) thermal oxidation method growth SiO2 film 4, or CVD mode single sided deposition SiO2 film 4, and the thickness of SiO2 film 4 is 100-400nm.During thermal oxidation method growth SiO2 film 4, must with mixed acid corrosive liquid or laser or corrosivity slurry or plasma or other can etching SiO2 the SiO2 film of the non-emission pole-face of method etching, and the etching reactant, the SiO2 film that CVD mode single sided deposition mode prepares does not need this step of the non-emission pole-face of method etching SiO2 film that mixed acid solution or laser or corrosivity slurry or plasma or other can etching SiO2;
F) be the mask layer of phosphorous diffusion with SiO2 film 4, phosphorous diffusion source prepares front-surface field 3, and square resistance is 10-150ohm/Sq;
G) plasma etching is removed the PN junction that forms at silicon chip edge;
H) HF acid is cleaned and is removed PSG and part Si O2 film 4, keeps 10-150nm SiO2 film 4 passivating films as P type emitter junction 2;
I) the emission pole-face deposits 10-100nm with the PECVD method, and refractive index is the SiNx passivating film 5 between the 1.9-2.5;
J) front-surface field is with PECVD method deposition 70-100nm, refractive index be 1.9-2.5 play passivation and antireflective effect SiNx film 6;
K) back up silver aluminium paste;
L) oven dry;
M) positive printed silver slurry;
N) sintering.
Embodiment 1: select n type pulling of crystals silicon chip, crystal face (100), doping content 6 Ω cm.
1, silicon chip is handled through conventional surface clean and positive pyramid surface-texturing;
2, the liquid boron diffusion source of BBr3 prepares P type emitter junction 2,930 ℃ of diffusion temperatures, and the time is 50min, square resistance is 60ohm/Sq;
3, the back cleaning machine with RENA company etches away back side P type emitter junction and removes BSG simultaneously;
4, grow SiO2 film 4 as mask layer with thermal oxidation method, thickness is 300nm;
5, use the SiO2 film of the non-emission pole-face of corrosivity slurry etching;
6, POCl3 liquid phosphorus diffuse source prepares front-surface field 3,850 ℃ of diffusion temperatures, and the time is 40min, square resistance is 40ohm/Sq;
7, plasma etching is removed the edge PN junction;
8, PSG and part Si O2 film 4 are removed in 5%HF acid, and the time is 30s, and final SiO2 film 4 thickness are 20nm;
9, back side PECVD deposition 60nm, refractive index is 2.05 SiNx passivating film 5;
10, the refractive index of positive deposition 70-100nm is greater than 2.25 SiNx film 6;
11, back up silver aluminium paste;
12, oven dry;
13, positive printed silver slurry;
14, sintering.
The battery sheet that this step is made after tested, efficient is 18.1%.
Claims (8)
1. the N type solar cell of the mask method preparation used of a film more, it is characterized in that: with n type pulling of silicon single crystal is matrix (1), silicon chip back is the P type emitter junction (2) that is coated with the boron diffusion preparation of passivating film, the front of silicon chip is the front-surface field (3) of phosphorous diffusion preparation, has been coated with the film of passivation and antireflective effect on the front-surface field (3).
2. the N type solar cell of the mask method preparation that an a kind of film according to claim 1 is used more, it is characterized in that: the passivating film at the described silicon chip back side is SiO2 and SiNx dual layer passivation film, and SiNx passivating film (5) is at the skin of SiO2 film (4).
3. the mask method used of a film prepares the method for N type solar cell more, it is characterized in that: with n type pulling of silicon single crystal is matrix (1), at first prepare P type emitter junction (2) by boron diffusion, etch away positive P type emitter junction then, go up making SiO2 film (4) at the P at silicon chip back side type emitter junction (2), this SiO2 film (4) promptly is the mask that follow-up phosphorous diffusion prepares front-surface field (3), is again the passivating film of P type emitter junction (2), prepares front-surface field (3) by phosphorous diffusion at last.
4. the mask method that an a kind of film according to claim 3 is used more prepares the method for N type solar cell, and it is characterized in that: its concrete steps are:
A) n type pulling of crystals silicon chip surface forms suede structure to reduce reflection;
B) boron diffusion prepares P type emitter junction (2), and square resistance is 20-150ohm/Sq;
C) etch away positive P type emitter junction;
D) remove Pyrex;
E) go up making SiO2 film (4) at the P at silicon chip back side type emitter junction (2), this SiO2 film (4) promptly is the mask that follow-up phosphorous diffusion prepares front-surface field, is again the passivating film of P type emitter junction;
F) phosphorous diffusion prepares front-surface field (3), and square resistance is 10-150ohm/Sq;
G) PN junction that removes PSG and form at the edge;
H) the emission pole-face is made SiNx passivating film (5), and front-surface field is made the SiNx film (6) with passivation and antireflective effect;
I) make grid line.
5. the mask method of using according to the described a kind of film of claim 4 prepares the method for N type solar cell more, it is characterized in that: after boron diffusion is finished, etch away positive P type emitter junction with mixed acid solution or laser or corrosivity slurry.
6. the mask method of using according to the described a kind of film of claim 4 prepares the method for N type solar cell more, it is characterized in that: SiO2 film (4) forms with the thermal oxidation method growth, must be with mixed acid solution or laser or corrosivity slurry or the non-emission pole-face of plasma etching SiO2 film, the thickness of the SiO2 film (4) of emission pole-face is 100-400nm.
7. the mask method of using according to the described a kind of film of claim 4 prepares the method for N type solar cell more, it is characterized in that: SiO2 film (4) is that CVD mode single sided deposition forms, and the thickness of the SiO2 film (4) of emission pole-face is 100-400nm.
8. the mask method of using according to claim 4,6 or 7 described a kind of films prepares the method for N type solar cell more, it is characterized in that: after phosphorous diffusion, need to remove PSG with low concentration HF acid, keep P type emitter face portion SiO2 film (4) simultaneously as passivating film, the thickness of the SiO2 film (4) of reservation is 10-150nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103579407A (en) * | 2012-07-26 | 2014-02-12 | 聚日（苏州）科技有限公司 | Solar cell and manufacturing method thereof |
| CN103904164A (en) * | 2014-04-15 | 2014-07-02 | 苏州阿特斯阳光电力科技有限公司 | Preparation method for N-shaped back-junction solar cell |
| EP2626914A3 (en) * | 2012-02-10 | 2016-03-16 | Shin-Etsu Chemical Co., Ltd. | Solar Cell and Method of Manufacturing the Same |
| CN109509812A (en) * | 2018-11-14 | 2019-03-22 | 晶澳（扬州）太阳能科技有限公司 | A kind of production method of crystal silicon solar energy battery emitter |
| CN111640823A (en) * | 2020-06-11 | 2020-09-08 | 常州时创能源股份有限公司 | N-type passivated contact battery and preparation method thereof |
| CN113140655A (en) * | 2021-04-01 | 2021-07-20 | 常州顺风太阳能科技有限公司 | Preparation method of TOPCON battery with back selective emitter |
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| CN101882650A (en) * | 2010-06-29 | 2010-11-10 | 常州大学 | Preparation method of solar cell with buried charge layer |
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| EP2626914A3 (en) * | 2012-02-10 | 2016-03-16 | Shin-Etsu Chemical Co., Ltd. | Solar Cell and Method of Manufacturing the Same |
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| CN103904164A (en) * | 2014-04-15 | 2014-07-02 | 苏州阿特斯阳光电力科技有限公司 | Preparation method for N-shaped back-junction solar cell |
| CN103904164B (en) * | 2014-04-15 | 2017-04-12 | 苏州阿特斯阳光电力科技有限公司 | Preparation method for N-shaped back-junction solar cell |
| CN109509812A (en) * | 2018-11-14 | 2019-03-22 | 晶澳（扬州）太阳能科技有限公司 | A kind of production method of crystal silicon solar energy battery emitter |
| CN111640823A (en) * | 2020-06-11 | 2020-09-08 | 常州时创能源股份有限公司 | N-type passivated contact battery and preparation method thereof |
| CN111640823B (en) * | 2020-06-11 | 2022-05-17 | 常州时创能源股份有限公司 | N-type passivated contact battery and preparation method thereof |
| CN113140655A (en) * | 2021-04-01 | 2021-07-20 | 常州顺风太阳能科技有限公司 | Preparation method of TOPCON battery with back selective emitter |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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