CN102683504A - Method improving manufacturing process of crystalline silicon solar cell through arsenic ion implantation - Google Patents
Method improving manufacturing process of crystalline silicon solar cell through arsenic ion implantation Download PDFInfo
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- CN102683504A CN102683504A CN2012101821730A CN201210182173A CN102683504A CN 102683504 A CN102683504 A CN 102683504A CN 2012101821730 A CN2012101821730 A CN 2012101821730A CN 201210182173 A CN201210182173 A CN 201210182173A CN 102683504 A CN102683504 A CN 102683504A
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Abstract
The invention discloses a method improving a manufacturing process of a crystalline silicon solar cell through arsenic ion implantation. On one hand, an N-type area is formed on the surface of the crystalline silicon solar cell through arsenic ion implantation, the crystalline silicon solar cell has high doping and shallow junction functions simultaneously, the open-circuit voltage and cell efficiency are improved, high-dose arsenic does not cause too many defects to the surface of silicon after annealing in contrast with phosphorus, reduction of the surface state density of a silicon chip is facilitated, and the service lives of minority carriers are prolonged; and on the other hand, metal of the silicon chip is in ohmic contact with the silicon chip in a traditional diffusion junction mode, the method is completely compatible with the conventional diffusion junction and screen printing sintering technology in the field of manufacture of photovoltaic cell, new parameters do not need exploring, and mass production can be achieved.
Description
Technical field
The present invention relates to a kind of solar cell and make the field, be specifically related to a kind of method of injecting arsenic improvement crystal silicon solar energy battery manufacture craft through ion.
Background technology
The basis of solar cell working principle is the photovoltaic effect of semiconductor PN.Semi-conducting material has certain energy gap; When energy impinges perpendicularly on the PN junction surface greater than a branch of light of semi-conducting material energy gap; Photon will be absorbed in the scope of surperficial certain depth; And incident light will be near the spatial excitation electron hole pair interface and the knot, and the light induced electron that is created in the space charge region separates under the knot effect of electric field with the hole, forms from the n district photogenerated current to the p district.Simultaneously, form a forward junction electric current reverse by photo-generated carrier drift and accumulation with photogenerated current.When photogenerated current and forward junction electric current reached stable state, stable electrical potential difference, i.e. photovoltage were set up in pn knot two ends.Through connecting external circuit, outwards power output.
What typical P type silicon solar cell adopted is the structure of n+ p.The highly doped height that obtains in surface n+district injects ratio, is called the emitter region.Lightly doped p district then is the base.Consider that from electric property high more n district doping content is brought high more open circuit voltage, thereby can be improved the efficient of solar cell.
Quantum efficiency generally is used for characterizing the relation of photoelectric current and incident light, reflection be to the ratio of the contributive photo-generated carrier density of short circuit current with incident photon density.Short wavelength's photon mainly is absorbed in the battery surface district, and the photo-generated carrier that is created near surperficial one deck must be diffused into the barrier region, because photo-generated carrier must be realized the separation of electric charge in the barrier region, this is the necessary condition that photovoltaic voltage produces.If emitter region thickness is wide, greater than electron diffusion length, the photo-generated carrier diffusion that is created in the emitter region does not have contribution less than the barrier region to photogenerated current, certainly will reduce quantum efficiency.Therefore battery design requires emitter region thickness thin as far as possible.
Comprehensive above 2 points, the design of n type emitter region should be approach with highly doped.The traditional P type solar cell generally adopts the way manufacturing n type emitter region of diffusion phosphorus, and this method receives the influence of process conditions such as temperature, and the emitter region can not be accomplished very shallow.The way that groups of people select to inject phosphorus with ion solves this problem, and the control emitter region concentration and the degree of depth are accurate, and processing procedure is a low temperature.But so also can bring other problems, the phosphorus of high concentration is infused in silicon face and can produces a large amount of defectives on the one hand, increases surface density of states, thereby has increased recombination-rate surface, has reduced minority carrier life time and battery efficiency.Silk screen printing and sintering process condition that the ohmic contact that junction depth that injects on the other hand and concentration need satisfy the metal and the silicon chip of battery surface simultaneously, industry are very ripe cannot directly be used, and need grope process conditions separately.
Summary of the invention
The object of the invention is to existing in prior technology not enough, provides a kind of and has injected the method that arsenic improves the crystal silicon solar energy battery manufacture craft through ion, can improve open circuit voltage and battery efficiency, and realizability is strong.
In order to solve these problems of the prior art, technical scheme provided by the invention is:
A kind of method through ion injection arsenic improvement crystal silicon solar energy battery manufacture craft is characterized in that said concrete making step comprises:
P type monocrystalline or polysilicon chip are removed affected layer and surface wool manufacturing;
Carry out patterned diffusion system knot in the positive appointed area of silicon chip;
Remove silicon chip edge place PN junction, and remove phosphorosilicate glass;
Inject arsenic at silicon wafer suede one side ion, then silicon chip is carried out rapid thermal annealing;
The matte side of silicon chip is with plasma enhanced chemical vapor deposition method (PECVD) deposited silicon nitride;
The electrode slurry that the silk screen printing silicon chip is positive and the back-surface-field (BSF) paste at the silicon chip back side;
Co-sintering forms ohmic contact.
For technique scheme, the inventor also has further optimization implementing measure in detail.
Further, inject arsenic at silicon wafer suede one side ion, energy is 1keV-1MkeV, and dosage is greater than 1e14.
The processing procedure of further, after silicon wafer suede one side ion injects arsenic, silicon chip being carried out rapid thermal annealing is in the temperature range of 900 degree-1200 degree, to handle 5s-30min.
Carry out patterned diffusion system knot in the positive appointed area of silicon chip, wherein the appointed area be after the zone of metal and silicon chip formation ohmic contact, its handling process comprises:
At positive thermal oxidation or plasma enhanced chemical vapor deposition method (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) cvd silicon oxide or the silicon nitride of adopting of silicon chip;
Silica in silicon chip positive printing etching property slurry or laser ablation selective removal appointed area;
Single face diffusion POCl3 (POCl3) forms positive n+ diffusion layer in the appointed area in the silicon chip front, and diffusion temperature is chosen as 840 degree-860 degree, and the time is 20min-30min;
Remove the silica or the silicon nitride of mask.
With respect to scheme of the prior art, advantage of the present invention is:
The invention describes a kind of method of injecting arsenic improvement crystal silicon solar energy battery manufacture craft through ion; The crystal silicon solar energy battery of making through this method adopts ion to inject the N type zone that arsenic forms the surface on the one hand, can possess highly doped simultaneously and function shallow junction, thereby improve open circuit voltage and battery efficiency; And with respect to phosphorus; The arsenic of annealing back high dose can't cause too many defective at silicon face, also is of value to the surface density of states that reduces silicon chip, improves minority carrier life time; The ohmic contact of the metal of silicon chip and silicon chip still adopts the method for traditional diffusion system knot on the other hand; This method is just compatible fully with the diffusion system knot and the silk screen printing sintering technology of present photovoltaic cell manufacturing field routine like this; Need not to grope new parameter, can realize scale of mass production.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further described:
Fig. 1 is the crystal silicon solar energy battery structural representation of the embodiment of the invention;
Wherein: 1, silicon base; 2, n+ diffusion layer; 3, ion injects n+ that arsenic forms zone; 4, the anti-anti-film of silicon nitride; 5, back of the body electric field; 6, positive electrode.
Embodiment
Below in conjunction with specific embodiment such scheme is further specified.Should be understood that these embodiment are used to the present invention is described and are not limited to limit scope of the present invention.The implementation condition that adopts among the embodiment can be done further adjustment according to the condition of concrete producer, and not marked implementation condition is generally the condition in the normal experiment.
Embodiment:
Present embodiment has been described a kind of ion and has been injected the crystal silicon solar energy battery that arsenic technology forms; (front refers to sensitive surface to the back side from its front; The back side refers to non-sensitive surface) comprise successively: positive silver metal positive electrode 6, silicon nitride resists anti-film 4, and positive ion injects the formed n+ of arsenic zone 3 (hereinafter to be referred as n+ zone 3); The n+ diffusion layer 2 that positive appointed area diffusion phosphorus forms, the aluminum back electric field 5 at the silicon base 1 and the back side.
Concrete manufacturing process steps is following:
Affected layer and surface wool manufacturing are removed in P type crystalline silicon substrate 1;
Carry out patterned diffusion system knot in the positive appointed area of silicon base 1.At silicon base 1 front cvd silicon oxide or silicon nitride; Depositional mode can adopt thermal oxidation, PECVD or LPCVD; Silica in silicon base 1 positive printing etching property slurry or laser ablation selective removal appointed area; At silicon base 1 front single face diffusion POCl3, form positive n+ diffusion layer 2 in the appointed area.Diffusion temperature is chosen as 840 degree-860 degree, time 20min-30min, and wherein the zone of diffusion is the ohmic contact zone of printing electrode afterwards, and then removes the silica or the silicon nitride of mask;
Remove the PN junction at edge with the method for plasma etching or chemical corrosion, remove phosphorosilicate glass then;
Inject arsenic at silicon base 1 front ion, energy is 1keV-1MkeV, and dosage forms n+ zone 3 greater than 1e14;
Silicon base 1 is handled 5s-30min in the temperature range of 900 degree-1200 degree, carry out rapid thermal annealing;
The matte side of silicon base 1 is with the anti-anti-film 4 of PECVD method deposited silicon nitride, and thickness is 70nm-90nm;
Silk screen printing.With Al slurry printing back of the body electric field 5 and oven dry, with Ag slurry printing positive electrode 6;
Last co-sintering forms ohmic contact, processes solar cell.
Above-mentioned instance only is explanation technical conceive of the present invention and characteristics, and its purpose is to let the people who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalent transformations that spirit is done according to the present invention or modification all should be encompassed within protection scope of the present invention.
Claims (5)
1. one kind is passed through the method that ion injects arsenic improvement crystal silicon solar energy battery manufacture craft, it is characterized in that said concrete making step comprises:
P type monocrystalline or polysilicon chip are removed affected layer and surface wool manufacturing;
Carry out patterned diffusion system knot in the positive appointed area of silicon chip;
Remove silicon chip edge place PN junction, and remove phosphorosilicate glass;
Inject arsenic at silicon wafer suede one side ion, then silicon chip is carried out rapid thermal annealing;
The matte side of silicon chip is with plasma enhanced chemical vapor deposition method deposited silicon nitride;
The electrode slurry that the silk screen printing silicon chip is positive and the back-surface-field (BSF) paste at the silicon chip back side;
Co-sintering forms ohmic contact.
2. the method through ion injection arsenic improvement crystal silicon solar energy battery manufacture craft according to claim 1 is characterized in that inject arsenic at silicon wafer suede one side ion, energy is 1keV-1MkeV, and dosage is greater than 1e14.
3. the described method of injecting arsenic improvement crystal silicon solar energy battery manufacture craft through ion according to claim 1; It is characterized in that; The processing procedure of after silicon wafer suede one side ion injects arsenic, silicon chip being carried out rapid thermal annealing is in the temperature range of 900 degree-1200 degree, to handle 5s-30min.
4. the method through ion injection arsenic improvement crystal silicon solar energy battery manufacture craft according to claim 1 is characterized in that the handling process of carrying out patterned diffusion system knot in the positive appointed area of silicon chip comprises:
At positive thermal oxidation or plasma enhanced chemical vapor deposition method or Low Pressure Chemical Vapor Deposition cvd silicon oxide or the silicon nitride of adopting of silicon chip;
Silica in silicon chip positive printing etching property slurry or laser ablation selective removal appointed area;
Single face diffusion POCl3 forms positive n+ diffusion layer in the appointed area in the silicon chip front;
Remove the silica or the silicon nitride of mask.
5. according to claim 1 or the 4 described methods of injecting arsenic improvement crystal silicon solar energy battery manufacture craft through ion; It is characterized in that; Carry out patterned diffusion system knot in the positive appointed area of silicon chip, wherein the appointed area be after the zone of metal and silicon chip formation ohmic contact.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105070789A (en) * | 2015-08-20 | 2015-11-18 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of emitter electrode of crystalline silica solar cell |
| CN108615789A (en) * | 2018-03-30 | 2018-10-02 | 浙江晶科能源有限公司 | A method of removal is around plating |
| CN109509812A (en) * | 2018-11-14 | 2019-03-22 | 晶澳（扬州）太阳能科技有限公司 | A kind of production method of crystal silicon solar energy battery emitter |
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| JP2005129714A (en) * | 2003-10-23 | 2005-05-19 | Sharp Corp | Manufacturing method of solar cell |
| US20070175508A1 (en) * | 2005-11-08 | 2007-08-02 | Lg Chem, Ltd. | Solar cell of high efficiency and process for preparation of the same |
| CN101241952A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Solar battery slice technology for efficient and low-cost film crystal silicon |
| CN101587919A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Method for manufacturing selective emitter junction of multricrytalline silicon solar cell |
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2012
- 2012-06-05 CN CN201210182173.0A patent/CN102683504B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005129714A (en) * | 2003-10-23 | 2005-05-19 | Sharp Corp | Manufacturing method of solar cell |
| US20070175508A1 (en) * | 2005-11-08 | 2007-08-02 | Lg Chem, Ltd. | Solar cell of high efficiency and process for preparation of the same |
| CN101241952A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Solar battery slice technology for efficient and low-cost film crystal silicon |
| CN101587919A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Method for manufacturing selective emitter junction of multricrytalline silicon solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105070789A (en) * | 2015-08-20 | 2015-11-18 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of emitter electrode of crystalline silica solar cell |
| CN108615789A (en) * | 2018-03-30 | 2018-10-02 | 浙江晶科能源有限公司 | A method of removal is around plating |
| CN109509812A (en) * | 2018-11-14 | 2019-03-22 | 晶澳（扬州）太阳能科技有限公司 | A kind of production method of crystal silicon solar energy battery emitter |
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