CN106972065B - Using the p-type PERC double-sided solar battery and preparation method of laser labelling contraposition - Google Patents
Using the p-type PERC double-sided solar battery and preparation method of laser labelling contraposition Download PDFInfo
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- CN106972065B CN106972065B CN201710123713.0A CN201710123713A CN106972065B CN 106972065 B CN106972065 B CN 106972065B CN 201710123713 A CN201710123713 A CN 201710123713A CN 106972065 B CN106972065 B CN 106972065B
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- 238000002372 labelling Methods 0.000 title claims abstract description 91
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 29
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 29
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 49
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229940037003 alum Drugs 0.000 claims abstract description 43
- 238000007639 printing Methods 0.000 claims abstract description 30
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000000047 product Substances 0.000 claims description 70
- 238000000151 deposition Methods 0.000 claims description 16
- 238000007650 screen-printing Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000011267 electrode slurry Substances 0.000 claims description 6
- 239000012467 final product Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 14
- 239000004411 aluminium Substances 0.000 abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 abstract description 14
- 230000002950 deficient Effects 0.000 abstract description 4
- -1 silicon nitrides Chemical class 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005498 polishing Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 241001282153 Scopelogadus mizolepis Species 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The present invention discloses a kind of p-type PERC double-sided solar battery and preparation method using laser labelling contraposition, including the back electrode set gradually from bottom to up, back side silicon nitride, pellumina, P-type silicon, N-type emitter, front side silicon nitride film and positive silver electrode, back electrode is mainly connected by the backplane main grid of perpendicular intersection with back alum gate line, the fluting that several perforation back side silicon nitrides and pellumina are overleaf provided on silicon nitride film constitutes laser slotting area, P-type silicon is exposed in fluting, the part that back alum gate line is located in fluting is connected with P-type silicon, laser labelling overleaf is set on silicon nitride film, the relative position in laser labelling and laser slotting area is preset, the contraposition of printing back alum gate line is carried out by positioning laser labelling and according to the distance between laser slotting area and laser labelling.The present invention can ensure that the aluminium paste of every silicon chip back side is accurately covered in laser slotting area, can effectively reduce the fraction defective of two-sided PERC solar battery.
Description
Technical field
The present invention relates to solar battery technology more particularly to a kind of p-type PERC using laser labelling contraposition are two-sided too
Positive energy battery, further relates to the preparation method of the solar battery.
Background technique
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, convert optical energy into electricity using photovoltaic effect
The device of energy.When sunlight is radiated in semiconductor P-N junction, new electron-hole pair will form, in the work of P-N junction electric field
Under, hole flows to the area P by the area N, and electronics flows to the area N by the area P, is formed electric current after connecting circuit.
Traditional crystal silicon solar batteries use the side PECVD in the front of silicon wafer generally only with front passivating technique
Formula deposits one layer of silicon nitride, reduces few son in the recombination rate of front surface, can significantly promote opening for crystal silicon solar batteries
Road voltage and short circuit current, to promote the photoelectric conversion efficiency of crystal silicon solar battery.
As the requirement to crystal silicon solar batteries photoelectric conversion efficiency is higher and higher, people begin one's study PERC back passivation
Solar cell technology.Currently, the focus of industry mainstream producer concentrates on the mass production of single side PERC solar battery.And for double
For the PERC solar battery of face, since its photoelectric conversion efficiency is high, while two-sided absorption sunlight, generated energy is higher, in reality
There is bigger use value in the application of border.
Existing PERC double-sided solar battery includes the back electrode set gradually from bottom to up, back side silicon nitride, oxygen
Change aluminium film, P-type silicon, N-type emitter, front side silicon nitride film and positive silver electrode, back electrode is mainly by the backplane master of perpendicular intersection
Grid line is connected with backplane pair grid line, and backplane pair grid line is usually alum gate line, and the perforation back side is overleaf provided on silicon nitride film
The fluting of silicon nitride film and pellumina constitutes laser slotting area, and the part that alum gate line is located in fluting is connected with P-type silicon.
In the preparation process of PERC double-sided solar battery, when overleaf printing aluminium paste, in order to determine printing aluminium paste
Position generally uses silicon wafer side alignment mode.This alignment mode is specifically: obtaining the four of silicon wafer by the camera of printing machine
While position come determine laser slotting area and silicon wafer while the distance between, and then determine the position in laser slotting area, according to
Aluminium paste is accurately printed in laser slotting area by the positioning of camera, printing machine.But this silicon wafer side alignment mode exists
Following defect: silicon wafer can have error during the preparation process, so that its shape is not necessarily the square shape of standard, using silicon wafer
The problem that side alignment mode can bring positioning inaccurate, this is because printing machine is side and the laser slotting according to silicon wafer in printing
The distance between area prints the position of aluminium paste to determine, and the shape of silicon wafer is not the square of rule, directly results in every
The aluminium paste of silicon chip back side can not be accurately printed in laser slotting area, in this way, improving the bad of two-sided PERC solar battery
Rate.
Summary of the invention
The first purpose of this invention is to provide a kind of accurate contraposition that can be realized aluminium paste and laser slotting area, reduces
The p-type PERC double-sided solar battery of battery fraction defective aligned using laser labelling.
The first purpose of this invention is realized by the following technical solutions: a kind of p-type aligned using laser labelling
PERC double-sided solar battery, including back electrode, back side silicon nitride, pellumina, P-type silicon, the N set gradually from bottom to up
Type emitter, front side silicon nitride film and positive silver electrode, the back electrode is mainly by the backplane main grid of perpendicular intersection and back alum gate
Line, which is connected, to be formed, and the fluting composition that several perforation back side silicon nitrides and pellumina are provided in the back side silicon nitride swashs
Light slotted zones, the P-type silicon are exposed in the fluting, and the part that the back alum gate line is located in fluting is connected with P-type silicon, special
Sign is: being overleaf arranged laser labelling on silicon nitride film, the relative position in the laser labelling and laser slotting area is set in advance
It is fixed, pair of printing back alum gate line is carried out by positioning laser labelling and according to the distance between laser slotting area and laser labelling
Position.
The present invention is by being arranged the preset laser labelling in relative position with laser slotting area, when printing aluminium paste,
Printing machine positioning laser labelling and the contraposition that printing back alum gate line is carried out according to the distance between laser slotting area and laser labelling.
The present invention is compared with the alignment mode of existing silicon wafer side, it can be ensured that the aluminium paste of every silicon chip back side is accurately covered on laser slotting area
On, it can effectively reduce the fraction defective of two-sided PERC solar battery.Moreover, the configuration of the present invention is simple, it is easy to accomplish, it is suitable for big
Scale volume production.
As a kind of preferred embodiment of the invention, the laser labelling is located at the periphery in laser slotting area, and is in
The corner of solar battery is arranged by proximal edges, and whole laser labellings is on same square, the laser labelling
In at least two on the relative position, and by positioning laser labelling and according to that outermost fluting of laser slotting area swash
The distance between signal carries out the contraposition of printing back alum gate line.
As one embodiment of the present invention, the laser labelling is four, is located at four of solar battery
Corner.
As one embodiment of the present invention, the shape of single laser labelling be cross, triangle, circle, it is rectangular,
Pentagon or hexagon etc..
As one embodiment of the present invention, the back side silicon nitride with a thickness of 20~500nm.
As one embodiment of the present invention, the pellumina with a thickness of 2~50nm.
The present invention can have following implementation: the fluting is several groups, and each group fluting is in parallel arrangement；Every group of fluting
By several sections of flutings form perhaps every group of fluting be a complete fluting or every group of fluting by the fluting of several through hole shapes and
Perhaps every group of fluting is made of several sections of fluting compositions the fluting of several through hole shapes or every group of fluting is by transversely parallel arrangement
Ordered series of numbers slot composition, each column fluting be made of several sections of flutings of longitudinally parallel arrangement.
As one embodiment of the present invention, the spacing between adjacent sets fluting is 0.5~50mm.
As one embodiment of the present invention, the width of the back alum gate line is greater than the width of fluting, back alum gate line
Width is 55~550 microns.
As one embodiment of the present invention, the width of fluting is 50~500 microns.
As one embodiment of the present invention, the backplane main grid is complete one, or is formed by several sections.
Second object of the present invention is to provide a kind of above-mentioned p-type PERC double-sided solar aligned using laser labelling
The preparation method of battery.
Second object of the present invention is realized by the following technical solutions: a kind of above-mentioned using laser labelling contraposition
The preparation method of p-type PERC double-sided solar battery, it is characterised in that the following steps are included:
(1) flannelette is formed in the front of P-type silicon；
(2) it is diffused in the front by step (1) products obtained therefrom, forms N-type emitter；
(3) remove by step phosphorosilicate glass and periphery P N knot that (2) products obtained therefrom is formed in diffusion process；
(4) it is sequentially depositing pellumina and back side silicon nitride at the back side by step (3) products obtained therefrom, then is deposited in front
Front side silicon nitride film, or in the front deposition front side silicon nitride film by step (3) products obtained therefrom, then overleaf it is sequentially depositing oxygen
Change aluminium film and back side silicon nitride；
(5) laser labelling, the relative position of laser labelling and laser slotting area are stamped at the back side by step (4) products obtained therefrom
It presets, while fluting is opened up using laser and constitutes laser slotting area；
(6) in the back up backplane main gate line by step (5) products obtained therefrom；
(7) printing back alum gate is carried out by positioning laser labelling and according to the distance between laser slotting area and laser labelling
The contraposition of line, by step (6) the back side of products obtained therefrom and be located at laser slotting area on printing back alum gate line, back alum gate line be located at
Part in fluting is connected with P-type silicon；
(8) in the front print positive electrode slurry by step (7) products obtained therefrom；
(9), by step, (8) products obtained therefrom carries out high temperature sintering, silver electrode and positive silver electrode are carried on the back in formation；
It (10) will (9) products obtained therefrom carries out anti-LID and anneals by step to obtain the final product.
As one embodiment of the present invention, the step (6)~(8) in, printed using silk-screen printing or ink-jet mode
Brush.
As one embodiment of the present invention, decide whether according to the actual situation to the back side by step (3) products obtained therefrom
Polishing, if desired polishes, then after polishing to the back side by step (3) products obtained therefrom, is transferred to step (4).
Compared with prior art, the present invention has following significant effect:
(1) the present invention is printing aluminium paste by the preset laser labelling in relative position of setting and laser slotting area
When, printing machine positioning laser labelling simultaneously carries out pair that alum gate line is carried on the back in printing according to the distance between laser slotting area and laser labelling
Position.The present invention is compared with the alignment mode of existing silicon wafer side, it can be ensured that the aluminium paste of every silicon chip back side is accurately covered on laser and opens
In slot area, the fraction defective of two-sided PERC solar battery can effectively reduce.
(2) the configuration of the present invention is simple, it is easy to accomplish, it is suitable for scale of mass production.
(3) the method for the present invention is simple and easy, beats laser using laser equipment used in laser slotting on existing production line
Label, standby without separately adding, production cost is low.
Detailed description of the invention
The following further describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is the schematic diagram (not drawing backplane main gate line) at 1 back side of the embodiment of the present invention；
Fig. 3 is the schematic diagram (not drawing backplane main gate line) at 2 back side of the embodiment of the present invention；
Fig. 4 is the schematic diagram (not drawing backplane main gate line) at 3 back side of the embodiment of the present invention.
Specific embodiment
Embodiment 1
It as illustrated in fig. 1 and 2, is a kind of p-type PERC double-sided solar battery aligned using laser labelling of the present invention, including
Back electrode 1, back side silicon nitride 3, pellumina 4, P-type silicon 5, the N-type emitter 6, front side silicon nitride set gradually from bottom to up
Silicon fiml 7 and positive silver electrode 8, positive silver electrode 8 is mainly by the positive silver electrode pair grid 82 of perpendicular intersection and positive 81 phase of silver electrode main grid
Company forms.Back silver electrode 1 is mainly connected by the backplane main gate line 11 of perpendicular intersection with back alum gate line 12, is overleaf nitrogenized
3 are provided with several composition of fluting 2 laser slotting areas 10 for penetrating through back side silicon nitrides 3 and pellumina 4 on silicon fiml, and P-type silicon 5 is exposed to
In fluting 2, the part 9 that back alum gate line 12 is located in fluting 2 is connected with P-type silicon 5, overleaf on silicon nitride film 3 and positioned at laser
The periphery of slotted zones 10 is equipped with laser labelling 13, and the relative position in laser labelling 13 and laser slotting area 10 is preset, at this
In embodiment, laser labelling 13 is two, is located at two opposite corners of solar battery 15, two laser labellings 13
On same square 14, passes through positioning laser labelling 13 and pass through outermost that fluting 2a, the 2b in laser slotting area 10
The contraposition that alum gate line is carried on the back in printing is carried out with the distance between its hithermost laser labelling 13 L respectively.In the present embodiment, single
The shape of a laser labelling 13 is cross.In other embodiments, the shape of single laser labelling 13 may be triangle,
Round, rectangular, pentagon or hexagon etc..
Every backplane main gate line 11 is complete one, or is formed by several sections.Back side silicon nitride 3 with a thickness of 20~
500nm.Pellumina 4 with a thickness of 2~50nm.The width for carrying on the back alum gate line 12 is 55~550 microns, carries on the back the width of alum gate line 12
Greater than the width of fluting 2.Fluting 2 is several groups, and each group fluting is in parallel arrangement, and in the present embodiment, every group of fluting is one
Complete fluting.Spacing between adjacent sets fluting 2 is 0.5~50mm；The width of fluting 2 is 50~500 microns.
It is a kind of it is above-mentioned using laser labelling contraposition p-type PERC double-sided solar battery preparation method, specifically include with
Lower step:
(1) flannelette is formed in the front of P-type silicon 5；
(2) it is diffused in the front by step (1) products obtained therefrom, forms N-type emitter 6；
(3) remove by step phosphorosilicate glass and periphery P N knot that (2) products obtained therefrom is formed in diffusion process；
(4) pellumina 4 and back side silicon nitride 3 are sequentially depositing at the back side by step (3) products obtained therefrom, then heavy in front
Product front side silicon nitride film 7, or in the front deposition front side silicon nitride film 7 by step (3) products obtained therefrom, then overleaf successively sink
Product pellumina 4 and back side silicon nitride 3；
(5) laser labelling 13, the phase of laser labelling 13 and laser slotting area 10 are stamped at the back side by step (4) products obtained therefrom
Position is preset, which is located at the periphery in laser slotting area 10, and in opposite two of solar battery
Corner, whole laser labellings 13 are on same square 14, while being opened up fluting using laser and being constituted laser slotting area 10；
(6) backplane main gate line 11 is printed using silk-screen printing or ink-jet mode at the back side by step (5) products obtained therefrom；
(7) printing machine is by positioning laser labelling 13 and according to outermost that fluting 2a, 2b difference in laser slotting area 10
The contraposition that alum gate line 12 is carried on the back in printing is carried out with the distance between its hithermost laser labelling 13 L, by step (6) gained production
The back side of product and it is located in laser slotting area 10 back alum gate line 12 is printed using silk-screen printing or ink-jet mode, carries on the back 12, alum gate line
It is connected in the part in fluting 2 with P-type silicon 5；
By step (7) products obtained therefrom front use silk-screen printing or ink-jet mode print positive electrode slurry；
(9), by step, (8) products obtained therefrom carries out high temperature sintering, back electrode 1 and positive silver electrode 8 are formed；
It (10) will (9) products obtained therefrom carries out anti-LID and anneals by step to obtain the final product.
After polishing to the back side by step (3) products obtained therefrom, then step can be transferred to (4) according to the actual situation.
Embodiment 2
As shown in figure 3, the present embodiment difference from example 1 is that: laser labelling 13 be four, be located at too
Four corners of positive energy battery 15, whole laser labellings 13 are on same square 14.
A kind of preparation method of the above-mentioned p-type PERC double-sided solar battery using laser labelling contraposition, including following step
It is rapid:
(1) flannelette is formed in the front of P-type silicon 5；
(2) it is diffused in the front by step (1) products obtained therefrom, forms N-type emitter 6；
(3) remove by step phosphorosilicate glass and periphery P N knot that (2) products obtained therefrom is formed in diffusion process, and the back side is carried out
After polishing, it is transferred to step (4)；
(4) pellumina 4 and back side silicon nitride 3 are sequentially depositing at the back side by step (3) products obtained therefrom, then heavy in front
Product front side silicon nitride film 7, or in the front deposition front side silicon nitride film 7 by step (3) products obtained therefrom, then overleaf successively sink
Product pellumina 4 and back side silicon nitride 3；
(5) laser labelling 13, the phase of laser labelling 13 and laser slotting area 10 are stamped at the back side by step (4) products obtained therefrom
Position is preset, which is located at the periphery in laser slotting area 10, and in opposite four of solar battery
Corner, whole laser labellings 13 are on same square 14, while being opened up fluting using laser and being constituted laser slotting area 10；
(6) backplane main gate line 12 is printed using silk-screen printing or ink-jet mode at the back side by step (5) products obtained therefrom；
(7) printing machine is by positioning laser labelling 13 and according to outermost that fluting 2a, 2b difference in laser slotting area 10
The contraposition that alum gate line 11 is carried on the back in printing is carried out with the distance between its hithermost laser labelling 13 L, by step (6) gained production
The back side of product and it is located in laser slotting area 10 back alum gate line 12 is printed using silk-screen printing or ink-jet mode, carries on the back 12, alum gate line
It is connected in the part in fluting 2 with P-type silicon 5；
By step (7) products obtained therefrom front use silk-screen printing or ink-jet mode print positive electrode slurry；
(9), by step, (8) products obtained therefrom carries out high temperature sintering, back electrode 1 and positive silver electrode 8 are formed；
It (10) will (9) products obtained therefrom carries out anti-LID and anneals by step to obtain the final product.
Embodiment 3
As shown in figure 4, the present embodiment difference from example 1 is that: laser labelling 13 be two, respectively close to too
The opposite two sides of positive energy battery 15, whole laser labellings 13 are on same square 14.
A kind of preparation method of the above-mentioned p-type PERC double-sided solar battery using laser labelling contraposition, including following step
It is rapid:
(1) flannelette is formed in the front of P-type silicon 5；
(2) it is diffused in the front by step (1) products obtained therefrom, forms N-type emitter 6；
(3) remove by step phosphorosilicate glass and periphery P N knot that (2) products obtained therefrom is formed in diffusion process, and the back side is carried out
After polishing, it is transferred to step (4)；
(4) pellumina 4 and back side silicon nitride 3 are sequentially depositing at the back side by step (3) products obtained therefrom, then heavy in front
Product front side silicon nitride film 7, or in the front deposition front side silicon nitride film 7 by step (3) products obtained therefrom, then overleaf successively sink
Product pellumina 4 and back side silicon nitride 3；
(5) laser labelling 13, the phase of laser labelling 13 and laser slotting area 10 are stamped at the back side by step (4) products obtained therefrom
Position is preset, which is located at the periphery in laser slotting area 10, and laser labelling 13 is two, and respectively close to
The opposite two sides of solar battery, whole laser labellings 13 are on same square 14, while being opened up out using laser
Slot constitutes laser slotting area 10；
(6) backplane main gate line 12 is printed using silk-screen printing or ink-jet mode at the back side by step (5) products obtained therefrom；
(7) printing machine is by positioning laser labelling 13 and according to outermost that fluting 2a, 2b difference in laser slotting area 10
The contraposition that alum gate line 11 is carried on the back in printing is carried out with the distance between its hithermost laser labelling 13 L, by step (6) gained production
The back side of product and it is located in laser slotting area 10 back alum gate line 12 is printed using silk-screen printing or ink-jet mode, carries on the back 12, alum gate line
It is connected in the part in fluting 2 with P-type silicon 5；
By step (7) products obtained therefrom front use silk-screen printing or ink-jet mode print positive electrode slurry；
(9), by step, (8) products obtained therefrom carries out high temperature sintering, back electrode 1 and positive silver electrode 8 are formed；
It (10) will (9) products obtained therefrom carries out anti-LID and anneals by step to obtain the final product.
Embodiment 4
A kind of preparation method of the p-type PERC double-sided solar battery using laser labelling contraposition, comprising the following steps:
(1) flannelette is formed in the front of P-type silicon；
(2) it is diffused in the front by step (1) products obtained therefrom, forms N-type emitter；
(3) remove by step phosphorosilicate glass and periphery P N knot that (2) products obtained therefrom is formed in diffusion process, and the back side is carried out
After polishing, it is transferred to step (4)；
(4) it is sequentially depositing pellumina and back side silicon nitride at the back side by step (3) products obtained therefrom, then is deposited in front
Front side silicon nitride film, or in the front deposition front side silicon nitride film by step (3) products obtained therefrom, then overleaf it is sequentially depositing oxygen
Change aluminium film and back side silicon nitride；
(5) laser labelling, the relative position of laser labelling and laser slotting area are stamped at the back side by step (4) products obtained therefrom
It presets, which is located at the periphery in laser slotting area, and two corners opposite in solar battery, whole
Laser labelling is on same square, while being opened up fluting using laser and being constituted laser slotting area；
(6) backplane main gate line is printed using silk-screen printing or ink-jet mode at the back side by step (5) products obtained therefrom；
Printing machine by positioning laser labelling and according to laser slotting area it is outermost that fluting respectively with it most
The distance between close laser labelling carries out the contraposition of printing back alum gate line, (6) the back side of products obtained therefrom and is being located at by step
Back alum gate line is printed using silk-screen printing or ink-jet mode in laser slotting area, back alum gate line is located at part and p-type in fluting
Silicon is connected；
By step (7) products obtained therefrom front use silk-screen printing or ink-jet mode print positive electrode slurry；
(9), by step, (8) products obtained therefrom carries out high temperature sintering, back electrode and positive silver electrode are formed；
It (10) will (9) products obtained therefrom carries out anti-LID and anneals by step to obtain the final product.
In other embodiments, every group of fluting by several sections fluting form or every group of fluting by several through hole shapes fluting
Perhaps every group of fluting is made of sum number section fluting composition the fluting of several through hole shapes or every group of fluting is by transversely parallel
The ordered series of numbers of cloth, which is slotted, to be formed, and each column fluting is made of several sections of flutings of longitudinally parallel arrangement.
The implementation of the present invention is not limited to this, and above content according to the present invention is known according to the ordinary skill of this field
Know and customary means, under the premise of not departing from above-mentioned basic fundamental thought of the invention, the shape of the single laser labelling of the present invention with
And the spacing between the thickness of arrangement form, back side silicon nitride, the thickness of pellumina, adjacent sets fluting, back alum gate line
There are also other embodiments for width of width and fluting etc..Therefore, the present invention can also make repairing for other diversified forms
Change, replace or change, all falls within rights protection scope of the present invention.
Claims (9)
1. a kind of p-type PERC double-sided solar battery aligned using laser labelling, including the back electricity set gradually from bottom to up
Pole, back side silicon nitride, pellumina, P-type silicon, N-type emitter, front side silicon nitride film and positive silver electrode, the back electrode master
To be connected by the backplane main grid of perpendicular intersection with back alum gate line, several perforation back are provided in the back side silicon nitride
The fluting of face silicon nitride film and pellumina constitutes laser slotting area, and the P-type silicon is exposed in the fluting, the back alum gate line
Part in fluting is connected with P-type silicon, it is characterised in that: laser labelling, the laser are overleaf arranged on silicon nitride film
The relative position in label and laser slotting area is preset, by positioning laser labelling and according to laser slotting area and laser labelling
The distance between carry out printing back alum gate line contraposition；The laser labelling is located at the periphery in laser slotting area, and is in the sun
The corner of energy battery is arranged by proximal edges, and whole laser labellings is on same square, in the laser labelling extremely
Few two on relative position, are slotted and laser mark by positioning laser labelling and according to outermost that in laser slotting area
The distance between note carries out the contraposition of printing back alum gate line.
2. the p-type PERC double-sided solar battery according to claim 1 aligned using laser labelling, it is characterised in that:
The laser labelling is four, is located at four corners of solar battery.
3. the p-type PERC double-sided solar battery according to claim 2 aligned using laser labelling, it is characterised in that:
The shape of single laser labelling is cross, triangle, circle, rectangular, pentagon or hexagon.
4. the p-type PERC double-sided solar battery according to claim 3 aligned using laser labelling, it is characterised in that:
The back side silicon nitride with a thickness of 20~500nm；The pellumina with a thickness of 2~50nm.
5. the p-type PERC double-sided solar battery according to claim 4 aligned using laser labelling, it is characterised in that:
The fluting is several groups, and each group fluting is in parallel arrangement；Every group of fluting is made of several sections of flutings or every group of fluting is one
Perhaps every group of fluting is made of complete fluting the fluting sum number section fluting of several through hole shapes or every group of fluting is by several logical
Poroid fluting composition or every group of fluting is made of the ordered series of numbers fluting of transversely parallel arrangement, and each column is slotted by putting down along longitudinal direction
The several sections of flutings composition of row arrangement.
6. the p-type PERC double-sided solar battery according to claim 5 aligned using laser labelling, it is characterised in that:
Spacing between adjacent sets fluting is 0.5~50mm；The width of the back alum gate line is greater than the width of fluting, carries on the back the width of alum gate line
Degree is 55~550 microns；The width of fluting is 50~500 microns.
7. special using the preparation method of the p-type PERC double-sided solar battery of laser labelling contraposition described in a kind of claim 1
Sign be the following steps are included:
(1) flannelette is formed in the front of P-type silicon；
(2) it is diffused in the front by step (1) products obtained therefrom, forms N-type emitter；
(3) remove by step phosphorosilicate glass and periphery P N knot that (2) products obtained therefrom is formed in diffusion process；
(4) pellumina and back side silicon nitride are sequentially depositing at the back side by step (3) products obtained therefrom, then in front deposition front
Silicon nitride film, or in the front deposition front side silicon nitride film by step (3) products obtained therefrom, then overleaf it is sequentially depositing aluminium oxide
Film and back side silicon nitride；
(5) laser labelling stamped at the back side by step (4) products obtained therefrom, the relative position in laser labelling and laser slotting area is preparatory
Setting, while fluting is opened up using laser and constitutes laser slotting area；
(6) in the back up backplane main gate line by step (5) products obtained therefrom；
(7) printing back alum gate line is carried out by positioning laser labelling and according to the distance between laser slotting area and laser labelling
Contraposition, by step (6) the back side of products obtained therefrom and be located at laser slotting area on printing back alum gate line, back alum gate line be located at fluting
Interior part is connected with P-type silicon；
(8) in the front print positive electrode slurry by step (7) products obtained therefrom；
(9), by step, (8) products obtained therefrom carries out high temperature sintering, silver electrode and positive silver electrode are carried on the back in formation；
It (10) will (9) products obtained therefrom carries out anti-LID and anneals by step to obtain the final product.
8. preparation method according to claim 7, it is characterised in that: the step (6)~(8) in, using silk-screen printing
Or ink-jet mode is printed.
9. preparation method according to claim 8, it is characterised in that: polished to the back side by step (3) products obtained therefrom
Afterwards, it is transferred to step (4).
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| CN108831961A (en) * | 2018-06-22 | 2018-11-16 | 通威太阳能（安徽）有限公司 | A kind of Mark dot pattern structure and preparation method thereof convenient for laser marking |
| CN110875398A (en) * | 2018-08-30 | 2020-03-10 | 盐城阿特斯协鑫阳光电力科技有限公司 | PERC double-sided battery piece |
| CN109004067A (en) * | 2018-09-26 | 2018-12-14 | 浙江晶科能源有限公司 | A kind of N-shaped preparation method of solar battery |
| CN113851410A (en) * | 2018-11-23 | 2021-12-28 | 苏州迈为科技股份有限公司 | Battery piece printing alignment method |
| CN109888053B (en) * | 2019-01-03 | 2021-08-31 | 天津爱旭太阳能科技有限公司 | P-type PERC double-sided solar cell alignment printing method, preparation method and cell |
| CN109904249B (en) * | 2019-01-03 | 2021-08-31 | 天津爱旭太阳能科技有限公司 | P-type PERC double-sided solar cell back pattern alignment printing method, preparation method and cell |
| CN110465755A (en) * | 2019-07-10 | 2019-11-19 | 阜宁苏民绿色能源科技有限公司 | A method of improving mark point crack |
| CN110744920B (en) * | 2019-10-29 | 2022-03-29 | 苏州美盈森环保科技有限公司 | Method and system for positioning printed product |
| CN111634133B (en) * | 2020-05-09 | 2022-04-29 | 浙江爱旭太阳能科技有限公司 | Method for adjusting solar cell grid line offset and application thereof |
| CN112510099B (en) * | 2020-11-30 | 2022-05-20 | 晶科能源(海宁)有限公司 | Solar cell module, solar cell and manufacturing method thereof |
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| CN102544197B (en) * | 2010-10-12 | 2015-08-05 | 上方能源技术(杭州)有限公司 | The scribble method of thin-film solar cells and equipment thereof |
| CN102779894A (en) * | 2011-05-12 | 2012-11-14 | 联景光电股份有限公司 | Producing method and device for electrodes of solar cells |
| CN103346205A (en) * | 2013-06-08 | 2013-10-09 | 中山大学 | Method for preparing crystalline silicon solar cell with cross vertical emitting electrode structure |
| TW201635561A (en) * | 2015-03-26 | 2016-10-01 | 新日光能源科技股份有限公司 | Solar cell with rear side multi-layer anti-reflection coating |
| CN105097961A (en) * | 2015-06-03 | 2015-11-25 | 北京七星华创电子股份有限公司 | Preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells |
| CN106449876B (en) * | 2016-10-17 | 2017-11-10 | 无锡尚德太阳能电力有限公司 | The preparation method of the two-sided PERC crystal silicon solar energy batteries of selective emitter |
| CN206505927U (en) * | 2017-03-03 | 2017-09-19 | 浙江爱旭太阳能科技有限公司 | A kind of p-type PERC double-sided solar batteries of use laser labelling contraposition |
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