CN109616545B - Method for improving alignment precision of back aluminum grid line and laser grooving of crystalline silicon solar cell - Google Patents
Method for improving alignment precision of back aluminum grid line and laser grooving of crystalline silicon solar cell Download PDFInfo
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 11
- 238000010330 laser marking Methods 0.000 claims description 8
- 239000002210 silicon-based material Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052709 silver Inorganic materials 0.000 abstract description 11
- 239000004332 silver Substances 0.000 abstract description 11
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 8
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 8
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention discloses a method for improving alignment precision of a back aluminum grid line and a laser groove of a crystalline silicon solar cell, which is characterized in that the color of a back passivation film of the crystalline silicon solar cell is different from the color of a laser mark point by changing the thickness and/or the refractive index of the back passivation film, the contrast ratio of the color of the back passivation film to the color of the laser mark point is greater than the contrast ratio of light yellow to silver gray, the alignment precision of the back aluminum grid line and the laser groove can be improved, and the efficiency and the yield of the cell are improved.
Description
Technical Field
The invention belongs to the field of solar cell manufacturing, and particularly relates to a method for improving alignment precision of a back aluminum grid line and laser grooving of a crystalline silicon solar cell.
Background
The crystalline silicon solar cell is a photoelectric conversion device which adopts crystalline silicon as a light absorption material and can convert solar energy into electric energy and output clean energy. Crystalline silicon solar cells currently account for about 90% of the global photovoltaic market.
The traditional crystalline silicon solar cell has the problem of high back surface recombination rate due to the fact that a back surface passivation layer is not arranged. With the continuous improvement of silicon materials, metallization and the like in recent years, a higher back surface recombination rate has become a significant bottleneck for further improving the photoelectric conversion efficiency of the conventional crystalline silicon solar cell. Therefore, in the current photovoltaic enterprises, the PERC cell with the back passivation layer is the focus of research and development, and the aim is to greatly improve the cell efficiency.
The perc (passivated Emitter and reactor cell) cell is an Emitter and back passivated cell for short, and is a crystalline silicon solar cell with a back passivation layer, and the structure of the crystalline silicon solar cell is shown in fig. 1a and 1b, wherein the back passivation layer is composed of an aluminum oxide layer 6 and a back silicon nitride layer 7. Depending on whether the aluminum electrode covers the entire back surface, one-sided and two-sided batteries can be distinguished, as shown in fig. 1a and 1b, respectively. The aluminum electrode of the double-sided battery is of a grid line structure, so that photovoltaic power generation can be realized if the back of the battery is illuminated.
Due to the unique back passivation structure of the PERC battery, the aluminum electrode originally covering the whole back can be adjusted to only cover the aluminum grid line of the laser grooving area, and therefore double-sided power generation capacity is achieved. Compared with a single-sided battery, the double-sided power generation battery can additionally utilize ground reflected light and environment scattered light to generate power and obtain considerable power generation gain. Therefore, the double-sided PERC battery has a good application prospect.
As shown in fig. 1b, the double-sided PERC cell structure comprises, from top to bottom, a silver electrode 1, a front silicon nitride layer 2, an N-type silicon 3 (emitter), a P-type silicon 4, a local aluminum back field 5, an aluminum oxide layer 6, a back silicon nitride layer 7, and an aluminum electrode 8, wherein the aluminum electrode 8 is a gate line structure. In addition, fig. 9 shows laser grooving on the back passivation layer (aluminum oxide layer 6 and back silicon nitride layer 7). The single-sided PERC cell shown in fig. 1a differs from the double-sided PERC cell shown in fig. 1b in that the aluminum electrode 8 covers the entire back of the cell, rather than only the grid line structure covering the laser trench 9 area. In a double-sided PERC cell, the aluminum electrode is brought into contact with the P-type silicon through laser grooving on the back passivation layer. Because the laser grooving and the aluminum electrode are both of grid line structures, the laser grooving and the aluminum electrode need to be aligned, otherwise, the series resistance of the battery is increased, and the conversion efficiency of the battery is influenced. Also, misaligned cells cannot be detected by EL (electroluminescence), which affects cell yield.
Currently, for a monocrystalline silicon wafer, a laser marking point positioning method is generally adopted in the industry to achieve alignment of an aluminum electrode grid line and a laser grooving. The specific process is as follows: in the process of grooving the back passivation layer by using laser, besides the grooving normally used for forming electrode contact, 4 marking points with certain shapes, such as round points, are additionally added. And then, when the aluminum electrode grid line is subjected to screen printing, identifying the marking point through a camera, and adjusting the position of the aluminum grid line according to the position of the marking point to align the aluminum grid line with the laser grooving.
When the laser marking point positioning method is applied to a polycrystalline silicon wafer, referring to fig. 2a and 2b, it can be seen that, compared with the surface of a single crystal silicon, more patterns exist on the surface of the polycrystalline silicon wafer, a camera is interfered by the patterns in the process of identifying laser marking points, and the identification rate of the marking points is greatly reduced. When the laser mark points cannot be identified, the camera can only align by identifying the edge of the silicon wafer, but because the silicon wafer is not a completely regular square, the position of the whole laser grooving figure on the silicon wafer also has certain offset, so that a certain proportion of aluminum grid lines cannot align with the laser grooving, and the efficiency and yield of the battery are seriously influenced.
Disclosure of Invention
Aiming at the technical problems, the invention aims to provide a method for improving the alignment precision of a back aluminum grid line and a laser grooving of a crystalline silicon solar cell, which can improve the alignment precision of the back aluminum grid line and the laser grooving and improve the efficiency and yield of the cell.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method for improving alignment accuracy of a back aluminum grid line and laser grooving of a crystalline silicon solar cell is characterized in that the color of a back passivation film of the crystalline silicon solar cell is different from the color of a laser mark point by changing the thickness and/or the refractive index of the back passivation film.
Further, the contrast of the color of the back passivation film to the color at the laser mark is greater than the contrast of light yellow to silver gray.
Further, the contrast ratio of the color of the back passivation film to the color at the laser mark is greater than or equal to the contrast ratio of blue to silver gray.
Further, the color of the laser mark is the color of the silicon material.
Further, the back passivation film is a blue film.
Further, the back passivation film comprises an aluminum oxide layer and a silicon nitride layer which are stacked with each other, the aluminum oxide layer is formed on the back surface of the polycrystalline silicon wafer, the silicon nitride layer is formed on the outer surface of the aluminum oxide layer, and the color of the back passivation film is adjusted by adjusting the thickness and the refractive index of the silicon nitride layer.
Further, the silicon nitride layer is a blue film.
Furthermore, the thickness of the silicon nitride layer is 73-100 nm, and the refractive index is 1.9-2.1.
Compared with the prior art, the invention has the following advantages by adopting the scheme:
the back surface passivation film is adjusted to be different from the color of a laser mark point by changing the thickness and/or the refractive index of the back surface passivation film, so that the interference of patterns on the surface of the polycrystalline silicon wafer is reduced, the mark point identification rate is improved, the alignment precision of a back surface aluminum grid line and laser grooving is improved, and the efficiency and the yield of the battery are improved.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1a and FIG. 1b are schematic structural diagrams of single-sided and double-sided polycrystalline PERC cells, respectively;
FIGS. 2a and 2b are photographs of a monocrystalline silicon wafer and a polycrystalline silicon wafer, respectively;
fig. 3a and 3b are photographs of the polysilicon wafer after back passivation, wherein the back passivation film in fig. 3a is a light yellow film, and the back passivation film in fig. 3b is a blue film.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that the advantages and features of the invention may be more readily understood by those skilled in the art. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiment provides a method for improving alignment precision of a back aluminum grid line and a laser grooving of a crystalline silicon solar cell, in particular to a method for improving alignment precision of a back aluminum grid line and a laser grooving of a polycrystalline silicon solar cell, and relates to an improved preparation process of the polycrystalline silicon solar cell. The method comprises the following specific steps: the color of the back passivation film of the crystalline silicon solar cell is different from the color at the laser mark point, preferably forms a high-contrast color with the color at the laser mark point by changing the thickness and/or the refractive index of the back passivation film.
In this embodiment, four laser mark points are arranged on the back surface of the polycrystalline silicon wafer, and the four laser mark points are respectively close to four corners of the polycrystalline silicon wafer. The laser marking point penetrates through the back passivation film on the polycrystalline silicon wafer, so that the color of the silicon material is presented, namely the color of the laser marking point is silver gray presented by the silicon material.
The back passivation film body includes an aluminum oxide layer formed on a back surface of the polycrystalline silicon wafer and a silicon nitride layer formed on an outer surface of the aluminum oxide layer, which are stacked on each other. The color of the back passivation film is adjusted by adjusting the thickness and the refractive index of the silicon nitride layer positioned on the outer layer.
The contrast of the color of the back passivation film to the color at the laser mark should be greater than the contrast of the light yellow to the color of the silicon material (i.e., silver gray). Preferably, the contrast ratio of the color of the rear passivation film to the color at the laser mark is greater than or equal to the contrast ratio of blue to the color of the silicon material (i.e., silver gray). In this embodiment, the back passivation film is specifically a blue film, the color of the outer surface of the back passivation film is blue, and the silicon nitride layer is a blue film.
Specifically, the thickness of the silicon nitride layer is controlled to be 73-100 nanometers, the refractive index is controlled to be 1.9-2.1, and the color of the silicon nitride layer is blue. Further, the color of the silicon nitride layer may be purple, red, or the like.
The method improves the identification rate of the marking points by reducing the interference of the patterns on the surface of the polycrystalline silicon chip on the identification of the laser marking points. Specifically, the color of the back passivation film is adjusted by changing the film thickness and refractive index of the back silicon nitride layer, as shown in fig. 3a and 3 b. Regardless of the color of the back passivation film, the color is unchanged, being silver gray of the silicon material, at the laser mark point because the back passivation layer has been removed. When the passivation layer on the back side is light yellow, as shown in fig. 3a, the laser mark points are easily interfered by the patterns on the surface of the polysilicon chip, resulting in a decrease in the mark point recognition rate. If the color of the back passivation layer is adjusted to blue as shown in fig. 3b, on one hand, the darker color can cover up the pattern of the polysilicon chip to a certain extent, and on the other hand, the contrast between the silver gray at the laser mark point and the blue color of the back passivation layer is high, so that the interference from the pattern of the polysilicon chip can be reduced. Therefore, after the back passivation layer is adjusted to be blue, the recognition rate of the laser mark points can be greatly improved, the alignment precision of the aluminum grid line and the laser grooving is improved, and the efficiency and the yield of the battery are improved. The back passivation layer is not limited to be blue, but may be other colors capable of forming a high contrast with silver gray at the laser mark point.
The color of the back surface passivation film is adjusted only by changing the thickness and the refractive index, the method is simple and easy to implement, and extra cost is not increased. According to the invention, the back passivation film is adjusted to be a color which can form high contrast with silver gray at the laser mark point, so that the interference from the surface pattern of the polycrystalline silicon wafer is reduced, the mark point recognition rate is improved, the alignment precision of the back aluminum grid line and the laser grooving is improved, and the battery efficiency and the yield are improved.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and are preferred embodiments, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the scope of the present invention. All equivalent changes or modifications made according to the principles of the present invention should be covered within the protection scope of the present invention.
Claims (1)
1. A method for improving alignment precision of a back aluminum grid line and laser grooving of a polycrystalline silicon solar cell is characterized by comprising the following steps: the polycrystalline silicon solar cell comprises a polycrystalline silicon slice, wherein the back of the polycrystalline silicon slice is provided with laser marking points, and the laser marking points penetrate through a back passivation film on the polycrystalline silicon slice so as to show the color of a silicon material; changing the thickness and/or refractive index of a back passivation film of the polycrystalline silicon solar cell to enable the color of the back passivation film to be different from the color of the laser mark point; the back passivation film comprises an aluminum oxide layer and a silicon nitride layer which are mutually laminated, the aluminum oxide layer is formed on the back of the polycrystalline silicon wafer, the silicon nitride layer is formed on the outer surface of the aluminum oxide layer, the thickness of the silicon nitride layer is 73-100 nanometers, and the refractive index of the silicon nitride layer is 1.9-2.1, so that the back passivation film is blue.
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| CN103966546A (en) * | 2014-04-29 | 2014-08-06 | 京东方科技集团股份有限公司 | Metal mask plate |
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| CN206505927U (en) * | 2017-03-03 | 2017-09-19 | 浙江爱旭太阳能科技有限公司 | A kind of p-type PERC double-sided solar batteries of use laser labelling contraposition |
| CN108365026A (en) * | 2018-03-28 | 2018-08-03 | 通威太阳能（成都）有限公司 | A kind of double-side solar cell back side conductive structure and production method based on PERC |
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Patent Citations (6)
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| CN102280437A (en) * | 2011-07-13 | 2011-12-14 | 旭曜科技股份有限公司 | Alignment mark and manufacturing method thereof |
| CN103287138A (en) * | 2012-02-28 | 2013-09-11 | 深圳市大族激光科技股份有限公司 | Method for laser making on surface of plastic material |
| CN103966546A (en) * | 2014-04-29 | 2014-08-06 | 京东方科技集团股份有限公司 | Metal mask plate |
| CN104409536A (en) * | 2014-12-08 | 2015-03-11 | 常州天合光能有限公司 | Color photovoltaic module for building interior decoration and preparation method thereof |
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