CN110649111A - Laminated solar cell - Google Patents
Laminated solar cell Download PDFInfo
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- CN110649111A CN110649111A CN201910886663.0A CN201910886663A CN110649111A CN 110649111 A CN110649111 A CN 110649111A CN 201910886663 A CN201910886663 A CN 201910886663A CN 110649111 A CN110649111 A CN 110649111A
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- 239000000463 material Substances 0.000 claims abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010936 titanium Substances 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 210000004027 cell Anatomy 0.000 claims abstract 18
- 210000005056 cell body Anatomy 0.000 claims abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 7
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 230000005525 hole transport Effects 0.000 claims description 6
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 14
- 238000003475 lamination Methods 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PQJKKINZCUWVKL-UHFFFAOYSA-N [Ni].[Cu].[Ag] Chemical compound [Ni].[Cu].[Ag] PQJKKINZCUWVKL-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- FZHSXDYFFIMBIB-UHFFFAOYSA-L diiodolead;methanamine Chemical group NC.I[Pb]I FZHSXDYFFIMBIB-UHFFFAOYSA-L 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a laminated solar cell which comprises an anti-reflection layer, an upper cell, an interface layer, a lower cell and a lower electrode which are sequentially laminated from top to bottom, wherein at least 3 cell bodies are arranged on the upper surface of the anti-reflection layer at equal intervals, a front electrode is electrically connected in each cell body, and the upper cell contains a titanium ore structural material. According to the invention, through the design of the laminated structure, the theoretical efficiency limit of the crystalline silicon solar cell can be broken through, namely, the efficiency of the crystalline silicon solar cell can be further improved.
Description
Technical Field
The invention relates to the field of crystalline silicon solar cells, in particular to a laminated solar cell.
Background
In the field of photovoltaic, high-efficiency solar cells are the hot direction of research of photovoltaic manufacturers. In the process of researching and realizing the further improvement of the efficiency of the solar cell, the inventor finds that the crystalline silicon solar cell in the prior art has at least the following problems:
the maximum efficiency of the crystalline silicon cell in a laboratory is about 25.8 percent at present, the theoretical efficiency limit of the crystalline silicon cell is quickly approached, and the efficiency is difficult to be improved upwards.
In view of the above, there is a need to develop a stacked solar cell to further improve the efficiency of the solar cell.
Disclosure of Invention
Aiming at the defects in the prior art, the invention mainly aims to provide the laminated solar cell, which can break through the theoretical efficiency limit of the crystalline silicon cell through the laminated structure design, namely, can further improve the efficiency of the crystalline silicon solar cell.
In order to achieve the above objects and other advantages and in accordance with the purpose of the invention, a stacked solar cell is provided, which includes an anti-reflection layer, an upper cell, an interface layer, a lower cell, and a lower electrode, which are sequentially stacked from top to bottom, wherein at least 3 grooves are formed on an upper surface of the anti-reflection layer at equal intervals, each of the grooves is electrically connected with a front electrode, and the upper cell contains a titanium ore structure material.
Optionally, the upper battery includes an upper transparent conductive layer, a hole transport layer, a perovskite substrate layer, and an electron transport layer, which are sequentially stacked from top to bottom.
Optionally, the lower cell is of a TOPcon structure, and the lower cell includes a P emitter, an N-type silicon substrate, a silicon dioxide passivation layer, a doped polysilicon thin film layer, and a lower transparent conductive layer, which are sequentially stacked from top to bottom.
Optionally, the front electrode is a copper-tin electrode, the width of the front electrode is 20-40 μm, and the height of the front electrode is 10-30 μm.
Optionally, the anti-reflection layer is a magnesium fluoride film, and the thickness of the anti-reflection layer is 80-120 nm.
Optionally, the interface layer is a SiN film, and the thickness of the SiN film is 0.1-2 nm.
Optionally, the lower electrode is a copper-silver metal lamination formed by a magnetron sputtering method.
Optionally, the front electrode is made by electroplating.
Optionally, the groove body is formed by laser.
One of the above technical solutions has the following advantages or beneficial effects: due to the laminated structure design, higher open-circuit voltage can be obtained, the upper battery and the lower battery respectively absorb sunlight in different wavelength ranges, the utilization rate of the sunlight can be improved to the maximum extent, and the short-circuit battery is improved, so that higher photoelectric conversion efficiency can be obtained.
Drawings
Fig. 1 is a side view of a stacked solar cell according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the drawings, the shape and size may be exaggerated for clarity, and the same reference numerals will be used throughout the drawings to designate the same or similar components.
In the following description, terms such as center, thickness, height, length, front, back, rear, left, right, top, bottom, upper, lower, etc., are defined with respect to the configurations shown in the respective drawings, and in particular, "height" corresponds to a dimension from top to bottom, "width" corresponds to a dimension from left to right, "depth" corresponds to a dimension from front to rear, which are relative concepts, and thus may be varied accordingly depending on the position in which it is used, and thus these or other orientations should not be construed as limiting terms.
Terms concerning attachments, coupling and the like (e.g., "connected" and "attached") refer to a relationship wherein structures are secured or attached, either directly or indirectly, to one another through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
According to an embodiment of the present invention, referring to fig. 1, it can be seen that the stacked solar cell includes an anti-reflection layer 2, an upper cell 3, an interface layer 4, a lower cell 5 and a lower electrode 6, which are sequentially stacked from top to bottom, the anti-reflection layer 2 has at least 3 grooves 7 formed on an upper surface thereof at equal intervals, each of the grooves 7 is electrically connected with a front electrode 1, and the upper cell 3 contains a titanium ore structure material.
The upper cell 3 further includes an upper transparent conductive layer 31, a hole transport layer 32, a perovskite base layer 33, and an electron transport layer 34, which are stacked in this order from top to bottom.
Further, the lower cell 5 is of a TOPcon structure, and the lower cell 5 includes a P emitter 51, an N-type silicon substrate 52, a silicon dioxide passivation layer 53, a doped polysilicon thin film layer 54 and a lower transparent conductive layer 55 which are sequentially stacked from top to bottom.
Furthermore, the front electrode 1 is a copper-tin electrode, and the width dimension of the front electrode 1 is 20-40 μm and the height dimension is 10-30 μm.
Furthermore, the anti-reflection layer 2 is a magnesium fluoride film, and the thickness of the magnesium fluoride film is 80-120 nm.
Furthermore, the interface layer 4 is a SiN film with a thickness of 0.1-2 nm.
Further, the lower electrode 6 is a copper-silver metal lamination formed by a magnetron sputtering method.
Further, the front electrode 1 is manufactured by adopting an electroplating mode.
Further, the groove body 7 is formed by laser.
The invention is further illustrated by the following specific examples.
Example one
A novel laminated solar cell comprises an antireflection layer 2, an upper cell 3, an interface layer 4, a lower cell 5 and a back electrode 6 which are sequentially stacked from top to bottom, wherein equidistant groove bodies 7 are formed in the antireflection layer 2 by using laser, each groove body 7 is electrically connected with a front electrode 1 manufactured in an electroplating mode, the upper cell 3 is of a perovskite structure, the interface layer 4 is arranged between the upper cell 3 and the lower cell 5, the upper cell 3 sequentially comprises an upper TCO transparent conducting layer 31, a hole transmission layer 32, a perovskite substrate layer 33 and an electron transmission layer 34 from top to bottom, the lower cell 5 is of a passivation contact Topcon structure, and the lower cell 5 sequentially comprises a P emitter 51, an N-type silicon wafer substrate 52, a silicon dioxide passivation layer 53, a doped polycrystalline silicon thin film layer 54 and a lower TCO transparent conducting layer 55 from top to bottom,
the N-type silicon wafer 52 may be subjected to alkaline texturing to form a pyramid textured structure, and the alkaline solution is a KOH solution.
Further, the silicon dioxide passivation layer 53 and the doped polysilicon thin film layer 54 are formed by low-temperature deposition in a PECVD mode, the thickness of the silicon dioxide amorphous silicon passivation layer 53 is 2nm, and the thickness of the doped polysilicon thin film layer 54 is 25 nm.
Further, the transparent conductive film layer is Indium Tin Oxide (ITO) with the thickness of 100 nm; the back electrode 6 is a copper-silver lamination formed by adopting a magnetron sputtering mode. The P emitter 51 is a P + layer formed by diffusing boron element to the surface of the silicon wafer, and is used as a PN junction of the lower cell. The interface layer 4 is a SiN film with a thickness of 1 nm.
Further, the hole transport layer 32 is a NiOX nanoparticle, the electron transport layer 34 is a TiO2 nanoparticle, and the perovskite substrate layer is methylamine lead iodide.
Further, the anti-reflection layer 2 is a magnesium fluoride film with the thickness of 100 nm.
Further, the front electrode 1 is a nickel-copper-silver metal lamination, the width is 30um, and the height is 15 um.
Example two
A novel laminated solar cell comprises an antireflection layer 2, an upper cell 3, an interface layer 4, a lower cell 5 and a back electrode 6 which are sequentially stacked from top to bottom, wherein equidistant groove bodies 7 are formed in the antireflection layer 2 by using laser, each groove body 7 is electrically connected with a front electrode 1 manufactured in an electroplating mode, the upper cell 3 is of a perovskite structure, the interface layer 4 is arranged between the upper cell 3 and the lower cell 5, the upper cell 3 sequentially comprises an upper TCO transparent conducting layer 31, a hole transmission layer 32, a perovskite substrate layer 33 and an electron transmission layer 34 from top to bottom, the lower cell 5 is of a passivation contact Topcon structure, and the lower cell 5 sequentially comprises a P emitter 51, an N-type silicon wafer substrate 52, a silicon dioxide passivation layer 53, a doped polycrystalline silicon thin film layer 54 and a lower TCO transparent conducting layer 55 from top to bottom,
the N-type silicon wafer 52 may be subjected to alkaline texturing to form a pyramid textured structure, and the alkaline solution is a KOH solution.
Further, the silicon dioxide passivation layer 53 and the doped polysilicon thin film layer 54 are formed by low-temperature deposition in a PECVD mode, the thickness of the silicon dioxide amorphous silicon passivation layer 53 is 1nm, and the thickness of the doped polysilicon thin film layer 54 is 20 nm.
Further, the transparent conductive thin film layer 55 is indium tin oxide ITO, and the thickness is 90 nm; the back electrode 6 is a copper-silver lamination formed by adopting a magnetron sputtering mode. The P emitter 51 is a P + layer formed by diffusing boron element to the surface of the silicon wafer, and is used as a PN junction of the lower cell. The interface layer 4 is a SiN film with a thickness of 2 nm.
Further, the hole transport layer 32 is a NiOX nanoparticle, the electron transport layer 34 is a TiO2 nanoparticle, and the perovskite substrate layer is methylamine lead iodide.
Further, the anti-reflection layer 2 is a magnesium fluoride film with the thickness of 120 nm.
Further, the front electrode 1 is a nickel-copper-silver metal lamination, the width is 40um, and the height is 30 um.
The invention adopts an N-type silicon wafer as a substrate material of a lower battery, and a P-type emitter, a silicon dioxide passivation layer, a doped polycrystalline silicon thin film layer, a lower TCO thin film and a lower metal electrode are sequentially formed on a backlight surface; an interface layer, an electron transport layer ETL, a perovskite substrate layer, a hole transport layer HTL, an upper TCO transparent conductive layer, an antireflection layer and a metal front electrode between an upper cell and a lower cell are sequentially formed on the light receiving surface; the laminated cell is provided with an upper sub cell and a lower sub cell, and the upper cell and the lower cell are connected in series to increase open-circuit voltage; the upper battery and the lower battery respectively absorb sunlight in different wavelength ranges, so that the effective absorption of the sunlight inside the batteries is increased, and the short-circuit current density is greatly improved; the magnesium fluoride film is used as an antireflection layer, and a TCO film is superposed to form a double-layer antireflection film, so that the reflectivity is reduced, and the light absorption is increased; by using the laser grooving technology, the width of the front electrode is effectively controlled, the front electrode is enabled to be ultra-fine, the metal shielding area is reduced, and the short-circuit current density is improved, so that the conversion efficiency of the battery is improved, and the novel laminated battery is enabled to be more competitive.
The number of apparatuses and the scale of the process described herein are intended to simplify the description of the present invention. Applications, modifications and variations of the present invention will be apparent to those skilled in the art.
While embodiments of the invention have been described above, it is not limited to the applications set forth in the description and the embodiments, which are fully applicable in various fields of endeavor to which the invention pertains, and further modifications may readily be made by those skilled in the art, it being understood that the invention is not limited to the details shown and described herein without departing from the general concept defined by the appended claims and their equivalents.
Claims (9)
1. The utility model provides a stromatolite formula solar cell, its characterized in that includes from last to stacking gradually down the anti-layer (2), go up battery (3), interface layer (4), lower battery (5) and bottom electrode (6) that set up, at least 3 cell bodies (7) have been seted up equidistantly to the upper surface of anti-layer (2), every all be connected with front electrode (1) in cell body (7), go up and contain titanium ore structure material in battery (3).
2. A stacked solar cell as claimed in claim 1, wherein said upper cell (3) comprises an upper transparent conductive layer (31), a hole transport layer (32), a perovskite base layer (33) and an electron transport layer (34) stacked in this order from top to bottom.
3. The stacked solar cell of claim 1, wherein the lower cell (5) is of a TOPcon structure, and the lower cell (5) comprises a P emitter (51), an N-type silicon substrate (52), a silicon dioxide passivation layer (53), a doped polysilicon thin film layer (54) and a lower transparent conductive layer (55) stacked in this order from top to bottom.
4. The stacked solar cell according to claim 1, wherein the front electrode (1) is a copper-tin electrode, and the width dimension of the front electrode (1) is 20 to 40 μm and the height dimension is 10 to 30 μm.
5. The stacked solar cell according to claim 1, wherein the antireflective layer (2) is a magnesium fluoride thin film having a thickness of 80 to 120 nm.
6. The stacked solar cell according to claim 1, wherein the interface layer (4) is a SiN thin film having a thickness of 0.1 to 2 nm.
7. A stacked solar cell as claimed in claim 1, wherein said lower electrode (6) is a copper-silver metal stack formed by magnetron sputtering.
8. A stacked solar cell as claimed in claim 1, wherein said front electrode (1) is formed by electroplating.
9. A stacked solar cell as claimed in claim 1, characterized in that the channel (7) is laser drilled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910886663.0A CN110649111A (en) | 2019-09-19 | 2019-09-19 | Laminated solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910886663.0A CN110649111A (en) | 2019-09-19 | 2019-09-19 | Laminated solar cell |
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| CN110649111A true CN110649111A (en) | 2020-01-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910886663.0A Pending CN110649111A (en) | 2019-09-19 | 2019-09-19 | Laminated solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172518A (en) * | 2020-01-19 | 2020-05-19 | 江苏杰太光电技术有限公司 | Integrated film coating method based on silane |
| CN111525037A (en) * | 2020-04-21 | 2020-08-11 | 泰州中来光电科技有限公司 | Preparation method of perovskite/N type TOPCon/perovskite laminated solar cell and cell |
| CN111540791A (en) * | 2020-05-09 | 2020-08-14 | 天合光能股份有限公司 | Solar cell and manufacturing method thereof |
| CN117279408A (en) * | 2023-11-15 | 2023-12-22 | 天合光能股份有限公司 | Laminated battery and preparation method thereof |
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| CN103390675A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Crystalline silicon solar cell and manufacturing method thereof |
| CN205657066U (en) * | 2016-04-28 | 2016-10-19 | 乐叶光伏科技有限公司 | Back passivation contact battery electrode structure |
| CN208548372U (en) * | 2018-06-29 | 2019-02-26 | 福建钜能电力有限公司 | A kind of double-junction solar battery |
-
2019
- 2019-09-19 CN CN201910886663.0A patent/CN110649111A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390675A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Crystalline silicon solar cell and manufacturing method thereof |
| CN205657066U (en) * | 2016-04-28 | 2016-10-19 | 乐叶光伏科技有限公司 | Back passivation contact battery electrode structure |
| CN208548372U (en) * | 2018-06-29 | 2019-02-26 | 福建钜能电力有限公司 | A kind of double-junction solar battery |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172518A (en) * | 2020-01-19 | 2020-05-19 | 江苏杰太光电技术有限公司 | Integrated film coating method based on silane |
| CN111525037A (en) * | 2020-04-21 | 2020-08-11 | 泰州中来光电科技有限公司 | Preparation method of perovskite/N type TOPCon/perovskite laminated solar cell and cell |
| CN111525037B (en) * | 2020-04-21 | 2023-05-12 | 泰州中来光电科技有限公司 | Preparation method of perovskite/N-type TOPCON/perovskite laminated solar cell |
| CN111540791A (en) * | 2020-05-09 | 2020-08-14 | 天合光能股份有限公司 | Solar cell and manufacturing method thereof |
| CN117279408A (en) * | 2023-11-15 | 2023-12-22 | 天合光能股份有限公司 | Laminated battery and preparation method thereof |
| CN117279408B (en) * | 2023-11-15 | 2024-02-27 | 天合光能股份有限公司 | Laminated battery and preparation method thereof |
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