KR102298673B1 - Solar cell module and ribbon used for the same - Google Patents

Abstract

A solar cell module according to an embodiment of the present invention includes a solar cell including a first solar cell and a second solar cell each including a semiconductor substrate, a conductive region, and an electrode; and a ribbon connecting the electrode of the first solar cell and the electrode of the second solar cell. The ribbon includes a first portion having a beveled side and a second portion positioned adjacent the first portion and having a side that intersects the beveled side of the first portion.

Description

Solar cell module and ribbon used therefor

The present invention relates to a solar cell module and a ribbon used therefor, and to a solar cell module in which a plurality of solar cells are connected by a ribbon and a ribbon used therefor.

Recently, as existing energy resources such as oil and coal are expected to be depleted, interest in alternative energy to replace them is increasing. Among them, a solar cell is spotlighted as a next-generation battery that converts solar energy into electrical energy.

These solar cells are manufactured in the form of a solar cell module by connecting a plurality of them. At this time, since the output of the solar cell module varies according to a structure for connecting the plurality of solar cells, it is required to connect the plurality of solar cells to improve the output of the solar cell module.

An object of the present invention is to provide a solar cell module capable of improving output and a ribbon used therefor.

A solar cell module according to an embodiment of the present invention includes a solar cell including a first solar cell and a second solar cell each including a semiconductor substrate, a conductive region, and an electrode; and a ribbon connecting the electrode of the first solar cell and the electrode of the second solar cell. The ribbon includes a first portion having a beveled side and a second portion positioned adjacent the first portion and having a side that intersects the beveled side of the first portion.

A ribbon for a solar cell module according to an embodiment of the present invention is a ribbon for a solar cell module that connects a first solar cell and a second solar cell adjacent to each other, wherein the ribbon includes a first portion having an inclined side surface; and a second portion positioned adjacent the first portion and having a side surface that intersects the beveled side surface of the first portion.

According to the present embodiment, the efficiency of the solar cell may be improved by increasing the amount of light reaching the solar cell by reflecting light from the inclined side surface of the first portion. In addition, the second portion has a side that crosses the inclined side, thereby improving the structural stability of the ribbon and adhesion to the electrode and lowering the resistance of the ribbon by sufficiently securing the cross-sectional area of the ribbon. Accordingly, the efficiency of the solar cell can be further improved.

1 is a schematic exploded perspective view of a solar cell module according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of a solar cell module taken along line II-II of FIG. 1 .
3 is a cross-sectional view illustrating a solar cell according to an embodiment of the present invention.
FIG. 4 is a plan view of the solar cell shown in FIG. 3 .
5 is a perspective view schematically illustrating first and second solar cells connected by a ribbon according to an embodiment of the present invention.
FIG. 6 is a schematic cross-sectional view of a solar cell module taken along a line corresponding to line VI-VI of FIG. 5 .
7 is a cross-sectional view of a ribbon used in a solar cell module according to a modification of the present invention.
8 is a cross-sectional view of a ribbon used in a solar cell module according to another modification of the present invention.
9 is a cross-sectional view illustrating an example of a method of manufacturing a ribbon included in the solar cell module shown in FIG. 1 .
10 is a schematic cross-sectional view of a solar cell module according to another embodiment of the present invention.
11 is a schematic cross-sectional view of a solar cell module according to another embodiment of the present invention.
12 is a perspective view of a ribbon included in the solar cell module of FIG. 11 .

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it goes without saying that the present invention is not limited to these embodiments and may be modified in various forms.

In the drawings, in order to clearly and briefly describe the present invention, the illustration of parts irrelevant to the description is omitted, and the same reference numerals are used for the same or extremely similar parts throughout the specification. In addition, in the drawings, the thickness, width, etc. are enlarged or reduced in order to make the description more clear, and the thickness, width, etc. of the present invention are not limited to the bars shown in the drawings.

And, when a certain part "includes" another part throughout the specification, other parts are not excluded unless otherwise stated, and other parts may be further included. Also, when a part of a layer, film, region, plate, etc. is said to be “on” another part, this includes not only the case where the other part is “directly on” but also the case where another part is located in the middle. When a part, such as a layer, film, region, plate, etc., is "directly above" another part, it means that no other part is located in the middle.

Hereinafter, a solar cell module and a ribbon used therein according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic exploded perspective view of a solar cell module according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of the solar cell module taken along line II-II of FIG. 1 .

Referring to FIG. 1 , a solar cell module 100 according to an embodiment of the present invention includes a solar cell 150 and a first substrate (hereinafter, referred to as a “front substrate”) 110 positioned on the front surface of the solar cell 150 . ) and a second substrate (hereinafter, “rear sheet”) 200 positioned on the rear surface of the solar cell 150 . In addition, the solar cell module 100 includes a first sealing material 131 between the solar cell 150 and the front substrate 110 and a second sealing material 132 between the solar cell 150 and the rear sheet 200 . may include This will be described in more detail.

First, the solar cell 150 is formed to include a photoelectric converter that converts solar energy into electrical energy, and an electrode electrically connected to the photoelectric converter. In this embodiment, as an example, a photoelectric conversion unit including a semiconductor substrate (eg, a silicon wafer) may be applied. An example of the solar cell 150 having such a structure will be described in detail with reference to FIGS. 3 and 4 , and then the solar cell module 100 will be described in detail again with reference to FIG. 1 .

3 is a cross-sectional view illustrating a solar cell according to an embodiment of the present invention, and FIG. 4 is a plan view of the solar cell shown in FIG. 3 . In FIG. 4 , the semiconductor substrate 160 and the electrodes 42 and 44 are mainly illustrated, and in FIGS. 3 and 4 , the ribbon 142 positioned on the solar cell 150 is not illustrated.

Referring to FIG. 3 , the solar cell 150 according to the present exemplary embodiment includes a semiconductor substrate 160 including a base region 10 , a first conductivity type region 20 having a first conductivity type, and a second conductivity type region 20 . A second conductivity type region 30 having a conductivity type, a first electrode 42 connected to the first conductivity type region 20 , and a second electrode 44 connected to the second conductivity type region 30 . includes In addition, the solar cell 150 may further include a first passivation layer 22 , an anti-reflection layer 24 , and a second passivation layer 32 . This will be described in more detail.

The semiconductor substrate 160 may be formed of a crystalline semiconductor. For example, the semiconductor substrate 160 may be formed of a single crystal or polycrystalline semiconductor (eg, single crystal or polycrystalline silicon). In particular, the semiconductor substrate 160 may be formed of a single crystal semiconductor (eg, a single crystal semiconductor wafer, more specifically, a single crystal silicon wafer). As such, when the semiconductor substrate 160 is formed of a single crystal semiconductor (eg, single crystal silicon), the solar cell 150 constitutes a single crystal semiconductor solar cell (eg, single crystal silicon solar cell). As described above, the solar cell 150 based on the semiconductor substrate 160 made of a crystalline semiconductor having high crystallinity and fewer defects may have excellent electrical characteristics.

The front surface and/or the rear surface of the semiconductor substrate 160 may be textured to have irregularities. The unevenness, for example, may have a pyramid shape that is formed of a (111) surface of the semiconductor substrate 160 and has an irregular size. However, the present invention is not limited thereto, and irregularities may have other shapes. When unevenness is formed on the front surface of the semiconductor substrate 160 by such texturing and the surface roughness is increased, the reflectance of light incident through the front surface of the semiconductor substrate 160 may be reduced. Accordingly, the amount of light reaching the pn junction formed by the base region 10 and the first conductivity type region 20 can be increased, thereby minimizing light loss. However, the present invention is not limited thereto, and irregularities due to texturing may not be formed on the front and rear surfaces of the semiconductor substrate 160 .

The semiconductor substrate 160 may include the base region 10 having the second conductivity type by including the second conductivity type dopant at a relatively low doping concentration. For example, the base region 10 may be located farther from the front surface of the semiconductor substrate 160 or closer to the rear surface of the semiconductor substrate 160 than the first conductivity-type region 20 . In addition, the base region 10 may be located closer to the front surface of the semiconductor substrate 160 and further away from the rear surface of the semiconductor substrate 160 than the second conductivity-type region 30 . However, the present invention is not limited thereto, and it goes without saying that the position of the base region 10 may be changed.

Here, the base region 10 may be formed of a crystalline semiconductor including a second conductivity type dopant. For example, the base region 10 may be formed of a single crystal or polycrystalline semiconductor (eg, single crystal or polycrystalline silicon) including a second conductivity type dopant. In particular, the base region 10 may be formed of a single crystal semiconductor (eg, a single crystal semiconductor wafer, more specifically, a single crystal silicon wafer) including a second conductivity type dopant.

The second conductivity type may be n-type or p-type. When the base region 10 has an n-type, the base region 10 is a single crystal or polycrystalline semiconductor doped with Group 5 elements such as phosphorus (P), arsenic (As), bismuth (Bi), antimony (Sb), etc. can be done When the base region 10 has a p-type, the base region 10 is a single crystal or polycrystalline semiconductor doped with group III elements such as boron (B), aluminum (Al), gallium (Ga), indium (In), etc. can be done

However, the present invention is not limited thereto, and the base region 10 and the second conductivity-type dopant may be formed of various materials.

For example, the base region 10 may be n-type. Then, the first conductivity type region 20 forming a pn junction with the base region 10 has a p-type. When light is irradiated to this pn junction, electrons generated by the photoelectric effect move toward the second surface (hereinafter, referred to as "rear") of the semiconductor substrate 160 and are collected by the second electrode 44, and holes are formed in the semiconductor substrate ( It moves toward the front side of 160 and is collected by the first electrode 42 . Thereby, electrical energy is generated. Then, holes having a slower movement speed than electrons move to the front surface of the semiconductor substrate 160 instead of the rear surface, so that conversion efficiency may be improved. However, the present invention is not limited thereto, and the base region 10 and the second conductivity-type region 30 may have a p-type and the first conductivity-type region 20 may have an n-type.

A first conductivity type region 20 having a first conductivity type opposite to that of the base region 10 may be formed on the front side of the semiconductor substrate 160 . The first conductivity type region 20 forms a pn junction with the base region 10 to constitute an emitter region that generates carriers by photoelectric conversion.

In the present embodiment, the first conductivity type region 20 may be configured as a doped region constituting a part of the semiconductor substrate 160 . Accordingly, the first conductivity type region 20 may be formed of a crystalline semiconductor including a first conductivity type dopant. For example, the first conductivity type region 20 may be formed of a single crystal or polycrystalline semiconductor (eg, single crystal or polycrystalline silicon) including a first conductivity type dopant. In particular, the first conductivity type region 20 may be formed of a single crystal semiconductor (eg, a single crystal semiconductor wafer, more specifically, a single crystal silicon wafer) including a first conductivity type dopant. As described above, when the first conductivity-type region 20 forms a part of the semiconductor substrate 160 , bonding characteristics with the base region 10 may be improved.

However, the present invention is not limited thereto, and the first conductivity-type region 20 may be formed on the semiconductor substrate 160 separately from the semiconductor substrate 160 . In this case, the first conductivity-type region 20 may be formed of a semiconductor layer having a crystal structure different from that of the semiconductor substrate 160 so as to be easily formed on the semiconductor substrate 160 . For example, the first conductivity type region 20 may be an amorphous semiconductor, a microcrystalline semiconductor, or a polycrystalline semiconductor (eg, amorphous silicon, microcrystalline silicon, or polycrystalline silicon) that can be easily manufactured by various methods such as deposition. It may be formed by doping a first conductivity-type dopant on the back. Various other variations are possible.

The first conductivity type may be p-type or n-type. When the first conductivity-type region 20 has a p-type, the first conductivity-type region 20 is doped with group III elements such as boron (B), aluminum (Al), gallium (Ga), indium (In), and the like. It may be made of a single crystal or polycrystalline semiconductor. When the first conductivity-type region 20 has an n-type, the first conductivity-type region 20 is doped with Group 5 elements such as phosphorus (P), arsenic (As), bismuth (Bi), antimony (Sb), etc. It may be made of a single crystal or polycrystalline semiconductor. However, the present invention is not limited thereto, and various materials may be used as the first conductivity type dopant.

In the drawings, it is exemplified that the first conductivity type region 20 has a homogeneous structure having a uniform doping concentration as a whole. However, the present invention is not limited thereto. Accordingly, in another embodiment, the first conductivity-type region 20 may have a selective structure. In the selective structure, a high doping concentration, a large junction depth, and a low resistance in a portion adjacent to the first electrode 42 of the first conductivity type region 20, and a low doping concentration, a small junction depth, and a high resistance in other portions can have As the structure of the first conductivity type region 20 , various other structures may be applied.

On the back side of the semiconductor substrate 160 , a second conductivity type region 30 having the same second conductivity type as that of the base region 10 , but including a second conductivity type dopant at a higher doping concentration than the base region 10 . can be formed. The second conductivity type region 30 forms a back surface field to prevent loss of carriers due to recombination on the surface of the semiconductor substrate 160 (more precisely, the back surface of the semiconductor substrate 160 ). constituting the rear electric field region.

In this embodiment, the second conductivity-type region 30 may be configured as a doped region constituting a part of the semiconductor substrate 160 . Accordingly, the second conductivity-type region 30 may be formed of a crystalline semiconductor including a second conductivity-type dopant. For example, the second conductivity type region 30 may be formed of a single crystal or polycrystalline semiconductor (eg, single crystal or polycrystalline silicon) including a second conductivity type dopant. In particular, the second conductivity type region 30 may be formed of a single crystal semiconductor (eg, a single crystal semiconductor wafer, more specifically, a single crystal silicon wafer) including a second conductivity type dopant. As described above, when the second conductivity type region 30 forms a part of the semiconductor substrate 160 , bonding characteristics with the base region 10 may be improved.

However, the present invention is not limited thereto, and the second conductivity-type region 30 may be formed on the semiconductor substrate 160 separately from the semiconductor substrate 160 . In this case, the second conductivity type region 30 may be formed of a semiconductor layer having a crystal structure different from that of the semiconductor substrate 160 so as to be easily formed on the semiconductor substrate 160 . For example, the second conductivity type region 30 may be an amorphous semiconductor, a microcrystalline semiconductor, or a polycrystalline semiconductor (eg, amorphous silicon, microcrystalline silicon, or polycrystalline silicon) that can be easily manufactured by various methods such as deposition. It may be formed by doping the back with a second conductivity type dopant. Various other variations are possible.

The second conductivity type may be n-type or p-type. When the second conductivity-type region 30 has an n-type, the second conductivity-type region 30 is doped with Group 5 elements, such as phosphorus (P), arsenic (As), bismuth (Bi), antimony (Sb), and the like. It may be made of a single crystal or polycrystalline semiconductor. When the second conductivity-type region 30 has a p-type, the second conductivity-type region 30 is doped with group III elements such as boron (B), aluminum (Al), gallium (Ga), indium (In), and the like. It may be made of a single crystal or polycrystalline semiconductor. However, the present invention is not limited thereto, and various materials may be used as the second conductivity type dopant. In addition, the second conductivity type dopant of the second conductivity type region 30 may be the same material as the second conductivity type dopant of the base region 10 or may be a different material.

In this embodiment, it is exemplified that the second conductivity type region 30 has a homogeneous structure having a uniform doping concentration as a whole. However, the present invention is not limited thereto. Accordingly, in another embodiment, the second conductivity-type region 30 may have a selective structure. In the selective structure, high doping concentration, large junction depth, and low resistance in the portion adjacent to the second electrode 44 of the second conductivity type region 30, and low doping concentration, small junction depth and high resistance in other portions can have In another embodiment, the second conductivity type region 30 may have a local structure. In the local structure, the second conductivity type region 30 may be locally formed corresponding to the portion where the second electrode 44 is formed. As the structure of the second conductivity type region 30 , various other structures may be applied.

A first passivation film 22 and an antireflection film 24 are sequentially formed on the front surface of the semiconductor substrate 160, more precisely, on the first conductivity type region 20 formed on or on the semiconductor substrate 160, A first electrode 42 is formed in contact with the first conductivity type region 20 through the first passivation film 22 and the antireflection film 24 (ie, through the opening 102 ).

The first passivation layer 22 and the anti-reflection layer 24 may be formed on substantially the entire surface of the semiconductor substrate 160 , except for the opening 102 corresponding to the first electrode 42 .

The first passivation layer 22 is formed in contact with the first conductivity type region 20 to passivate defects existing on the surface or in the bulk of the first conductivity type region 20 . Accordingly, the open-circuit voltage Voc of the solar cell 150 may be increased by removing the recombination site of minority carriers. The anti-reflection layer 24 reduces the reflectance of light incident on the front surface of the semiconductor substrate 160 . Accordingly, the amount of light reaching the pn junction formed by the base region 10 and the first conductivity-type region 20 may be increased by lowering the reflectance of light incident through the front surface of the semiconductor substrate 160 . Accordingly, the short-circuit current Isc of the solar cell 150 may be increased. As described above, by increasing the open circuit voltage and short circuit current of the solar cell 150 by the first passivation layer 22 and the antireflection layer 24 , the efficiency of the solar cell 150 may be improved.

The first passivation layer 22 may be formed of various materials. For example, the passivation film 22 is a single film selected from the group consisting of a silicon nitride film, a silicon nitride film containing hydrogen, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, MgF ₂ , ZnS, TiO ₂ and CeO _{2 , or} It may have a multilayer film structure in which two or more films are combined. For example, the first passivation film 22 may include a silicon oxide film, a silicon nitride film, etc. having a fixed positive charge when the first conductivity-type region 20 has an n-type, and the first conductivity-type region 20 ) has a p-type, it may include an aluminum oxide film having a fixed negative charge.

The anti-radiation layer 24 may be formed of various materials. For example, the anti-reflection film 24 is a silicon nitride film, a silicon nitride film containing hydrogen, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, MgF ₂ , ZnS, TiO ₂ and CeO ₂ Any single film or 2 selected from the group consisting of It may have a multilayer film structure in which two or more films are combined. For example, the anti-reflection layer 24 may include silicon nitride.

However, the present invention is not limited thereto, and it goes without saying that the first passivation layer 22 and the anti-reflection layer 24 may include various materials. In addition, since any one of the first passivation film 22 and the anti-reflection film 24 performs both the anti-reflection role and the passivation role, it is also possible that the other is not provided. Alternatively, various films other than the first passivation film 22 and the anti-reflection film 24 may be formed on the semiconductor substrate 160 . In addition, various modifications are possible.

The first electrode 42 is connected through the opening 102 formed in the first passivation film 22 and the antireflection film 24 (that is, through the first passivation film 22 and the antireflection film 24). It is electrically connected to the conductive region 20 . The first electrode 42 may be formed to have various shapes by using various materials. The shape of the first electrode 42 will be described again later with reference to FIG. 4 .

A second passivation film 32 is formed on the rear surface of the semiconductor substrate 160 , more precisely on the second conductivity-type region 30 formed on the semiconductor substrate 160 , and the second electrode 44 is a second passivation film It connects through 32 (ie, through opening 104 ) to region 30 of the second conductivity type.

The second passivation layer 32 may be formed on substantially the entire rear surface of the semiconductor substrate 160 except for the opening 104 corresponding to the second electrode 44 .

The second passivation layer 32 is formed in contact with the second conductivity type region 30 to passivate defects existing on the surface or in the bulk of the second conductivity type region 30 . Accordingly, the open-circuit voltage Voc of the solar cell 150 may be increased by removing the recombination site of minority carriers.

The second passivation layer 32 may be formed of various materials. For example, the second passivation film 32 is a single layer selected from the group consisting of a silicon nitride film, a silicon nitride film including hydrogen, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, MgF ₂ , ZnS, TiO ₂ and CeO _{2 .} Alternatively, it may have a multilayer film structure in which two or more films are combined. For example, the second passivation layer 32 may include a silicon oxide layer or a silicon nitride layer having a fixed positive charge when the second conductivity type region 30 has an n-type, and the second conductivity type region 30 . ) has a p-type, it may include an aluminum oxide film having a fixed negative charge.

However, the present invention is not limited thereto, and the second passivation layer 32 may include various materials. Alternatively, various films other than the second passivation film 32 may be formed on the back surface of the semiconductor substrate 160 . In addition, various modifications are possible.

The second electrode 44 is electrically connected to the second conductivity type region 30 through the opening 104 formed in the second passivation layer 32 . The second electrode 44 may be formed to have various shapes by using various materials.

The planar shape of the first and second electrodes 42 and 44 will be described in detail with reference to FIG. 4 .

Referring to FIG. 4 , the first and second electrodes 42 and 44 may include a plurality of finger electrodes 42a and 44a spaced apart from each other while having a constant pitch. Although the drawing illustrates that the finger electrodes 42a and 44a are parallel to each other and parallel to the edge of the semiconductor substrate 160, the present invention is not limited thereto. In addition, the first and second electrodes 42 and 44 may include bus bar electrodes 42b and 44b that are formed in a direction crossing the finger electrodes 42a and 44a and connect the finger electrodes 42a and 44a. have. One such bus bar electrodes 42b and 44b may be provided, or as shown in FIG. 4 , a plurality of bus bar electrodes 42a and 44b may be provided while having a pitch greater than that of the finger electrodes 42a and 44a. In this case, the width of the bus bar electrodes 42b and 44b may be greater than the width of the finger electrodes 42a and 44a, but the present invention is not limited thereto. Accordingly, the widths of the bus bar electrodes 42b and 44b may be equal to or smaller than the widths of the finger electrodes 42a and 44a.

When viewed in cross section, both the finger electrode 42a and the bus bar electrode 42b of the first electrode 42 may be formed to pass through the first passivation layer 22 and the antireflection layer 24 . That is, the opening 102 may be formed to correspond to both the finger electrode 42a and the bus bar electrode 42b of the first electrode 42 . In addition, both the finger electrode 44a and the bus bar electrode 44b of the second electrode 44 may be formed through the second passivation layer 32 . That is, the opening 104 may be formed to correspond to both the finger electrode 44a and the bus bar electrode 44b of the second electrode 44 . However, the present invention is not limited thereto. As another example, the finger electrode 42a of the first electrode 42 is formed to pass through the first passivation film 22 and the antireflection film 24 , and the bus bar electrode 42b is formed by the first passivation film 22 and It may be formed on the anti-reflection film 24 . In this case, the opening 102 may be formed in a shape corresponding to the finger electrode 42a, and may not be formed in a portion where only the bus bar electrode 42b is located. In addition, the finger electrode 44a of the second electrode 44 may be formed to penetrate the second passivation layer 32 , and the bus bar electrode 44b may be formed on the second passivation layer 32 . In this case, the opening 104 may be formed in a shape corresponding to the finger electrode 44a, but may not be formed in a portion where only the bus bar electrode 44b is located.

In the drawings, it is exemplified that the first electrode 42 and the second electrode 44 have the same planar shape. However, the present invention is not limited thereto, and the width and pitch of the finger electrode 42a and the bus bar electrode 42b of the first electrode 42 are determined by the finger electrode 44a and the bus bar electrode of the second electrode 44 . The width and pitch of (44b) may have different values. In addition, it is possible that the first electrode 42 and the second electrode 44 have different planar shapes, and various other modifications are possible.

As described above, in the present embodiment, the first and second electrodes 42 and 44 of the solar cell 150 have a constant pattern, so that the solar cell 150 can allow light to be incident to the front and rear surfaces of the semiconductor substrate 160 . It has a bi-facial structure. Accordingly, the amount of light used in the solar cell 150 may be increased, thereby contributing to the improvement of the efficiency of the solar cell 150 .

However, the present invention is not limited thereto, and the shapes of the first and/or second electrodes 42 and 44 may be variously modified. For example, it is also possible that the second passivation layer 32 is not provided and the second electrode 44 is entirely formed on the rear surface of the semiconductor substrate 160 to contact the semiconductor substrate 160 as a whole. Alternatively, the second electrode 44 is formed entirely on the second passivation film 32 formed on the rear surface of the semiconductor substrate 160 , and locally passes through the second passivation film 32 to be locally on the semiconductor substrate 160 . Contact is also possible. Various other variations are possible.

In the above description, an example of the solar cell 150 has been described with reference to FIGS. 3 and 4 . However, the present invention is not limited thereto, and the structure and method of the solar cell 150 may be variously modified. For example, the solar cell 150 may be a photoelectric conversion unit having various structures, such as using a compound semiconductor or using a dye-sensitized material.

Referring back to FIGS. 1 and 2 , the solar cells 150 may be electrically connected in series, parallel, or series-parallel by a ribbon 142 . Specifically, the ribbon 142 includes a first electrode (reference numeral 42 in FIG. 3 , hereinafter the same) formed on the front surface of the solar cell 150 and a second electrode formed on the rear surface of another solar cell 150 adjacent thereto. (reference numeral 44 in FIG. 3, hereinafter the same) may be connected. This will be described in more detail later with reference to FIGS. 5 to 7 .

The structure of the ribbon 142 according to the present embodiment connected to the solar cell 150 (more specifically, the first and second electrodes 42 and 44) in this way will be described in more detail later. . The ribbon 142 may be made of various materials, and may be made of a metal having excellent electrical conductivity and physical properties and excellent reflective properties. For example, the ribbon 142 may be formed of various metals such as copper, silver, or gold. The ribbon 142 may have excellent electrical conductivity, physical properties, and reflective properties at a low material cost, particularly when copper is a major metal.

In addition, the bus ribbon 145 alternately connects both ends of the ribbon 142 of one row of solar cells 150 connected by the ribbon 142 . The bus ribbon 145 may be disposed in a direction crossing the end of the solar cells 150 constituting one row. The bus ribbon 145 is connected to a junction box (not shown) that collects electricity generated by the solar cell 150 and prevents the electricity from flowing backward.

The first encapsulant 131 may be positioned at the front side of the solar cell 150 , and the second encapsulant 132 may be positioned at the rear face of the solar cell 150 . The first encapsulant 131 and the second encapsulant 132 may be adhered to the solar cell 150 by lamination to seal the solar cell 150 . Accordingly, the first and second sealing materials 131 and 132 block moisture or oxygen that may adversely affect the solar cell 150 , and allow each element of the solar cell 150 to be chemically combined.

As the first sealing material 131 and the second sealing material 132 , ethylene-vinyl acetate copolymer resin (EVA), polyvinyl butyral, silicon resin, ester-based resin, olefin-based resin, or the like may be used. However, the present invention is not limited thereto. Accordingly, the first and second sealing materials 131 and 132 may be formed by other methods other than lamination using various other materials.

The front substrate 110 is positioned on the first sealing material 131 to transmit sunlight, and is preferably made of tempered glass to protect the solar cell 150 from external impact. In addition, in order to prevent reflection of sunlight and increase the transmittance of sunlight, it is more preferable that the glass is low-iron tempered glass containing less iron. However, the present invention is not limited thereto, and the front substrate 110 may be made of other materials.

The back sheet 200 is a layer that protects the solar cell 150 from the back surface of the solar cell 150 , and functions to waterproof, insulate, and block UV rays. The back sheet 200 may be configured in the form of a film or sheet. The back sheet 200 may be a Tedlar/PET/Tedlar (TPT) type or a structure in which a polyvinylidene fluoride (PVDF) resin is formed on at least one surface of polyethylene terephthalate (PET). Polyvinylidene fluoride is a polymer having a structure of (CH ₂ CF ₂ )n. Since it has a double fluorine molecular structure, it has excellent mechanical properties, weather resistance, and UV resistance. However, the present invention is not limited thereto, and the back sheet 200 may be made of other materials. In this case, the back sheet 200 may be made of a material having excellent reflectance so that it can be reused by reflecting sunlight incident from the front substrate 110 side. However, the present invention is not limited thereto, and the rear sheet 200 may be formed of a transparent material (eg, glass) to which sunlight may be incident to implement the double-sided light-receiving solar cell module 100 .

The detailed structure of the above-described ribbon 142 will be described in more detail with reference to FIGS. 5 to 9 .

5 is a perspective view schematically illustrating first and second solar cells 151 and 152 connected by a ribbon 142 according to an embodiment of the present invention, and FIG. 6 corresponds to a line VI-VI of FIG. 5 . It is a schematic cross-sectional view of the solar cell module 100 viewed by cutting the line. In FIG. 5 , the solar cell 150 is simplified mainly based on the semiconductor substrate 160 and the first and second electrodes 42 and 44 . In this case, the ribbon 142 includes a first ribbon 1421 connecting the first solar cell 151 and a second solar cell 152 adjacent to one side thereof, and the first solar cell 151 and the other side adjacent thereto. A second ribbon 1422 connecting one other solar cell (ie, a solar cell located opposite to the second solar cell 152 ), and the second solar cell 152 and another adjacent solar cell (ie, the second solar cell 152 ) A third ribbon 1423 for connecting the first solar cell 151 (a solar cell located opposite to the first solar cell 151 ) may be provided. The ribbon 142 has first and second electrodes 42 and 44 formed from the first electrode 42 to the second electrode 44 to correspond to the first electrode 42 and the second electrode 44 . It may have a strip shape or the like that extends long to have a shape corresponding to the portion.

When a plurality of first or second electrodes 42 and 44 are provided in each solar cell 150 , each ribbon 142 (ie, the first ribbon 1421 , the second ribbon 1422 , and the third ribbon) 1423 each) may be provided in plurality in a corresponding number.

More specifically, each ribbon 142 (ie, the first ribbon 1421 , the second ribbon 1422 , or/and the third ribbon 1423 ) is connected to the front surface of the solar cell 150 (more precisely, A first region 142a located on the first electrode 42 of the solar cell 150 , and a rear surface of the solar cell 150 (more precisely, on the second electrode 44 of the solar cell 150 ). It includes a second region 142b positioned at , and the first region 142a and the second region 142b are connected to each other.

In the present specification, individual names and reference numerals of the first ribbon 1421 , the second ribbon 1422 , and the third ribbon 1423 are used for a brief and clear description. However, in reality, the description of the ribbon 142 can be viewed as a description of the first ribbon 1421, the second ribbon 1422 and the third ribbon 1423, respectively, and the first ribbon 1421, the second ribbon ( A description of 1422 and the third ribbon 1423 may be viewed as a description of the ribbon 142 . That is, the first region 142a of the first ribbon 1421 positioned on the front surface of the first solar cell 151 and the second region of the second ribbon 1422 positioned on the rear surface of the first solar cell 151 . The description of 142b is, when viewed with respect to one ribbon 142 , the first region 142a positioned at the front of the solar cell 150 and the second region ( 142b).

Referring to FIG. 6 , the first region 142a of the first ribbon 1421 (or ribbon 142 ) positioned on the first electrode 42 of the first solar cell 151 and the first solar cell 151 . ) of the second region 142b of the second ribbon 1422 (or ribbon 142) positioned above the second electrode 44 will be described in detail.

The first region 142a of the ribbon 142 according to the present embodiment, when viewed in a cross-section (more precisely, a cross-section orthogonal to the longitudinal direction of the ribbon 142), is a first region having an inclined side surface SS1. a second portion 1421b having a portion 1421a and a side surface SS2 positioned adjacent to the first portion 1421a and intersecting the inclined side surface SS1 of the first portion 1421a. In this case, the first portion 1421a and the second portion 1421b may have an integral structure having the same material as each other. In addition, the second portion 1421b may be positioned between the first portion 1421a and the first electrode 42 .

The inclined side surface SS1 of the first portion 1421a is the bottom surface PS3 adjacent to (eg, in contact with) the first electrode 42 in the first region 142a or the front surface of the front substrate 110 ( FS) or may be inclined on the rear side (RS). Then, the light (arrow a in FIG. 6 ) passing through the front substrate 110 and reaching the inclined side surface SS1 of the first portion 1421a is reflected from the inclined side surface SS1 toward the front substrate 110 . facing (arrow b in FIG. 6). At least a portion of the light reaching the front substrate 110 is the rear surface RS, and/or the front surface of the front substrate 110 which is the interface between the first sealing material 131 and the front substrate 110 in which a difference in refractive index occurs. Total reflection occurs on the front surface FS of the front substrate 110 , which is an interface between the substrate 110 and the air located outside the front substrate 110 , and moves toward the solar cell 150 again (arrow in FIG. 6 ). c). Accordingly, the efficiency of the solar cell 150 may be improved by increasing the amount of light reaching the solar cell 150 .

For example, an angle A formed between the inclined side surface SS1 and the bottom surface PS3 of the first region 142a or the front surface FS or the rear surface RS of the front substrate 110 (precisely, the second The interior angle at the portion where the first portion 1421a is located) may be 22 degrees to 45 degrees. If the angle A is less than 22 degrees, it may be difficult for a lot of light reflected from the inclined side surface SS1 to reach the front substrate 110 , and the area on the bottom surface PS3 side is increased so that the light is incident on the area this can be reduced In addition, it may be difficult to form the ribbon 142 having such a structure. When the angle A exceeds 45 degrees, it may be difficult for a lot of light reflected from the inclined side surface SS1 to reach the front substrate 110 . And when the angle A exceeds 45, the thickness (or height) T1 of the first portion 1421a must be large in order to form the inclined side surface SS1 of the same area, so it is difficult to manufacture the ribbon 142 and material cost There may be problems such as an increase in However, the present invention is not limited to the numerical value of the angle A.

And in the first part 1421a, the second part 1421b or the first surface adjacent to the first electrode 42 (the lower surface of the first part 1421a in the drawing) PS1 and the second surface opposite thereto (PS1) A surface distant from the first electrode 42 (a top surface of the first portion 1421a in the drawing) PS2 may be parallel to each other. Accordingly, the second surface PS2 of the first portion 1421a is the first surface PS1 of the first portion 1421a, and the bottom surface PS3 of the first region 142a (or the second portion 1421b). ), or may be parallel to the front surface FS or the rear surface RS of the front substrate 110 . Then, while the inclined side surface PS1 of the first portion 1421a has a constant angle A, the thickness T1 of the first portion 1421a is maintained at a constant level, so that the material cost of the ribbon 142, etc. It can be structurally stabilized by reducing the cost and avoiding the occurrence of sharp ends. However, the present invention is not limited thereto, and various modifications are possible.

Accordingly, the width of the first portion 1421a (ie, the width in the cross section orthogonal to the longitudinal direction of the ribbon 142) may gradually increase while facing the first electrode 42 . That is, the first portion 1421a has the largest first width T1 on the first surface PS1, the smallest second width T2 on the second surface PS2, and the second surface PS2. The width may gradually increase from the to the first surface PS1. Accordingly, the first portion 1421a may have a shape such as a trapezoid.

For example, the ratio of the second width W2 to the first width W1 (W2:W1) (or the ratio of the second width W2 to the third width W3 (W2: W3)) is 1:1.1 to 1:5. When the ratio (W2:W1 or W2:W3) is less than 1:1.1, the thickness of the first portion 1421a is small, so that the effect of the first portion 1421a is not sufficient or the width of the second portion 1421b is small. Since it is small, the effect of the second portion 1421b may not be sufficient. When the ratio (W2:W1 or W2:W3) exceeds 1:5, the structural stability of the ribbon 142 is deteriorated and the width of the second portion 1421b is increased, so that shading loss may occur. Considering the effect of the first portion 1421a and structural stability, the ratio (W2:W1 or W2:W3) may be 1:1.2 to 1:2. However, the present invention is not limited thereto, and various modifications are possible.

The second portion 1421b positioned between the first portion 1421a and the first electrode 42 in the first region 142a is a portion having a side surface SS2 that intersects the inclined side surface SS1. In this case, the side surface SS2 of the second portion 1421b is the first surface PS1 and the second surface PS2 of the first portion 1421a , the bottom surface PS3 of the first area 142a, or the front surface of the first portion 1421a . The front surface FS or the rear surface RS of the substrate 110 may intersect, for example, orthogonal to each other. Alternatively, in the second portion 1421b, the surface adjacent to the first portion 1421a (the upper surface of the second portion 1421b in the drawing, the same surface as the first surface PS1) and the opposite bottom surface PS3 It may have a rounded shape so that it has the same or similar width to each other and protrudes outward convexly in the portion between them.

As such, the second portion 1421b may have a rectangular shape or a quadrilateral shape in which both side surfaces SS2 are rounded. 6 illustrates that the side surface SS2 of the first portion 1421a has a rounded shape, but the present invention is not limited thereto. It may have various other structures. A method of manufacturing the ribbon 142 including the second portion 1421b having the rounded side surface SS2 will be described in more detail later.

This second portion 1421b has a width equal to or similar to the first width T1 on the first side PS1 of the first portion 1421a (more precisely, a width somewhat larger than the first width T1). The ribbon 142 (more precisely, the first region 1421a of the ribbon 142) can have a sufficiently low resistance.

For example, the width (the maximum width of the second portion 1421b) W3 of the second portion 1421b may be 95% to 110% of the first width W1 of the first portion 1421a. This is merely to limit the range that can be considered the same or similar in consideration of errors in the process, and the present invention is not limited thereto.

In this embodiment, the ribbon 142 can have a sufficient area by the second portion 1421b. And the structural stability of the ribbon 142 may be improved by the second portion 1421b. In addition, when the second portion 1421b is formed to gradually increase in width while facing the bottom surface PS3 like the first portion 1421a, the ribbon ( 142) is too large to cause shading loss.

In consideration of all these, in the present embodiment, a second portion having a third width W3 equal to or similar to the first width W1 is adjacent to a portion having the largest first width W1 in the first portion 1421a. (1421b) is formed with a constant thickness (T2). Thereby, structural stability of the ribbon 142 can be improved, resistance can be minimized, and shading loss can be maximized.

Here, a ratio of the thickness T1 of the first portion 1421a to the thickness T2 of the second portion 1421b may be 1:0.01 to 1:5. If the thickness ratio (T1:T2) is less than 1:0.01, the resistance reduction effect by the second portion 1421b may not be sufficient. If the ratio (T1:T2) exceeds 1:5, the material cost increases. and the adhesion characteristics of the ribbon 142 may be deteriorated, and thus the reliability of the module of the solar cell 100 may be reduced. In consideration of the effect and reliability of the second portion 1421b, the ratio (T1:T2) may be 1:0.3 to 1:2, for example, 1:0.3 to 1:1. However, the present invention is not limited thereto.

The first region 142a of the ribbon 142 may be fixed to be electrically connected to the first electrode 42 by various methods. For example, at least an adhesive layer 50 is placed between the ribbon 142 and the first electrode 42 to adhere the ribbon 142 and the first electrode 42 to the ribbon 142 to the first electrode 42 . can be fixed

As the adhesive layer 50 , various materials capable of electrically connecting the ribbon 142 and the first electrode 42 while physically fixing them may be used.

For example, the adhesive layer 50 may include a solder material. The solder material may include a Sn/Ag/Cu-based material, a Sn/Ag/Pb-based material, a Sn/Ag-based material, or a Sn/Pb-based material. When the adhesive layer 50 contains a solder material, the ribbon 142 is placed on the first electrode 42 in a state in which the solder paste is applied on the first electrode 42 and heat is applied by a simple and inexpensive tabbing process. The first electrode 42 and the ribbon 142 may be connected.

As another example, the adhesive layer 50 may be formed of a conductive film or a conductive tape. Then, an adhesive layer 50 composed of a conductive tape is positioned between the first electrode 42 and the ribbon 142, or an adhesive layer 50 composed of a conductive film is placed and then thermocompressed to the first electrode 42 ) and the ribbon 142 can be connected. The conductive film may be one in which conductive particles formed of gold, silver, nickel, copper, etc. having excellent conductivity are dispersed in a film formed of an epoxy resin, an acrylic resin, a polyimide resin, a polycarbonate resin, or the like. When the conductive film is compressed while applying heat, the conductive particles are exposed to the outside of the film, and the first electrode 42 and the ribbon 142 may be electrically connected by the exposed conductive particles. As such, when the conductive tape or film is used, the process temperature is lowered, so that the solar cell string 140 can be prevented from being bent. In this case, the conductive tape or conductive film may be attached or coated on the ribbon 142 to be integrally formed with the ribbon 142 .

As another example, the adhesive layer 50 may be formed of a metal layer obtained by firing a metal paste. That is, the ribbon 142 and the first electrode 42 may be connected by applying a metal paste on the first electrode 42 , positioning the ribbon 142 on the metal paste and firing the ribbon 142 . In this case, a low-temperature sintering paste such as silver (Ag) paste may be used as the metal paste.

In this embodiment, the adhesive layer 50 is positioned between the first electrode 42 and the ribbon 142 to have a planar shape (the same or similar shape to the first electrode 42) (eg, the first electrode). (42) and the ribbon 142). Thereby, it is possible to simplify the structure of the adhesive layer 50 and reduce the material cost of the adhesive layer 50 .

When the adhesive layer 50 is positioned only between the first electrode 42 and the ribbon 142 in this way, the surface of the ribbon 142 exposed to the outside (ie, the inclined side surface SS1, the side surface SS2, the second The two surfaces PS2) may be plated with a solder material. In consideration of this, as a modification, as shown in FIG. 7 , the first part 1421a and the second part 1421b formed of a metal (eg, copper) therein are positioned, and the first part integrated with each other ( A plating layer 1426 may be formed entirely on the outer surfaces of the 1421a) and the second portion 1421b. Then, the first electrode 42 and the ribbon 142 may be electrically connected to each other and adhered without separately providing the adhesive layer 50 .

In addition, although the above-described embodiment illustrated that the adhesive layer 50 is positioned only between the first electrode 42 and the ribbon 142, the present invention is not limited thereto. Accordingly, the shape and position of the adhesive layer 50 may be variously modified. For example, as shown in Fig. 8, the adhesive layer 50a is the outer surface of the ribbon 142 (that is, the entire surface in a cross-section orthogonal to the longitudinal direction of the ribbon 142, the inclined side surface SS1, the side surface ( SS2), the second surface PS2, and the bottom surface PS3 are all formed to surround the ribbon 142. The ribbon 142 and the adhesive layer 50a of this shape constitute the adhesive layer 50a. It can be formed by dipping the ribbon 142 in the adhesive material to do so. Then, there is no need to separately form a separate surface treatment plating layer (reference numeral 1426 in FIG. 7), etc., and various existing ribbons can be used. It may be adhered to the first electrode 42 through a simple process.

5 and 6 again, in the present embodiment, the second region 142b of the ribbon 142 may have substantially the same structure as the first region 142a. This is because the second region 142b of the ribbon 142 may have substantially the same shape as the first region 142a because the ribbon 142 has the shape of a strip or bar extending elongated.

Accordingly, the second region 142b includes a first portion 1422a having substantially the same shape as the first portion 1421a of the first region 142a, and a second portion 1421b of the first region 142a. It may include a second portion 1422b having substantially the same shape as . The first portion 1422a and the content related to the width, thickness, and angle of the first portion 1421a and the second portion 1421b, and the adhesive layer 50 connecting the ribbon 142 and the first electrode 42, etc. Since it can be directly applied to the second portion 1422b and the adhesive layer 50 connecting the ribbon 142 and the second electrode 44, a description thereof will be omitted.

However, the positional relationship between the first portion 1422a and the second portion 1422b and the second electrode 44 is slightly different from that of the first electrode 42 . That is, in the present embodiment, the vertical relationship between the first part 1421a and the second part 1421b and the vertical relationship between the first part 1422a and the second part 1422b are the same. That is, when viewed based on the drawing, in the first region 142a of the first ribbon 1421, the first portion 1421a is positioned above the second portion 1421b, and the second region of the second ribbon 1422 ( In 142b), the first portion 1422a is positioned above the second portion 1422b. And when viewed in the drawings, the first electrode 42 is positioned under the second portion 1421b of the first region 142a of the first ribbon 1421 , and the second electrode 44 is positioned under the second ribbon 1422 . ) is positioned below the first portion 1422a of the second region 142b.

Accordingly, in the first region 142a, the first portion 1421a is located farther from the first electrode 42 than the second portion 1421b, and the second portion 1421b and the first electrode 42 are formed by an adhesive layer. They are fixed to each other with (50) interposed therebetween. On the other hand, in the second region 142b , the first portion 1422a is positioned close to the second electrode 44 , and the second portion 1422b has the second electrode 44 and the adhesive layer 50 interposed therebetween. fixed to each other

When the ribbon 142 has the above-described structure, the amount of light incident on the front side of the semiconductor substrate 160 is relatively greater than the amount of light incident on the rear surface of the semiconductor substrate 160 . A larger amount of reflection may be induced in the first portion 1421a. In addition, light passing through the solar cell 150 and reaching the second region 142b of the second ribbon 1422 may be reflected from the side surface SS1 of the first portion 1421a and re-entered. Accordingly, the amount of light used in the solar cell 150 may be maximized. And in the first region 142a and the second region 142b, the first and second parts 1421a and 1421b have the same vertical relationship as the first and second parts 1422a and 1422b. It allows the ribbon 142 to have a simple structure.

The ribbon 142 having this structure may be manufactured by various methods. An example of a method of manufacturing the ribbon 142 will be described in detail with reference to FIG. 9 . 9 is a cross-sectional view illustrating an example of a method of manufacturing the ribbon 142 included in the solar cell module 100 shown in FIG. 1 .

First, as shown in FIG. 9A , a circular wire 1420 made of a material constituting the ribbon 140 (eg, copper or a plating layer (reference numeral 1426 in FIG. 7 )) is prepared. In this case, the circular line 1420 may have a circular cross-sectional shape and a long cylindrical shape. Then, the structure of the ribbon 142 as described above can be made more easily by not having an angled portion. However, the present invention is not limited thereto, and the circular line 1420 may have various shapes.

Next, as shown in FIG. 9B , the molds 144a and 144b press both sides of the circular wire 1420 . In this case, the first mold 144a may have a shape corresponding to the first portions 1421a and 1422a, and the second mold 144b positioned opposite to the first mold 144a may have a planar shape. . Then, the portion pressed by the first mold 1444a on the circular line 1420 has a shape approximately corresponding to the first portions 1421a and 1422a, and the portion pressed by the second mold 144b (in particular, , the portion in contact with the second mold 144b) has a flat surface. Between the shape corresponding to the first portions 1421a and 1422a and the flat surface, the first rounded state remains on the side surface of the circular line 1420a to some extent.

In this case, various structures and methods for applying a force to the circular wire 1420 may be applied to the molds 144a and 144b, and, for example, a rolling roller may be used as the molds 144a and 144b.

When it is desired to process at a time to prevent excessive stress on the original wire 1420, the machining process may be performed multiple times. At this time, the molds 144a and 144b used in the processing process may have a shape closer to the ribbon 142 in consideration of processability. Alternatively, as described above, after making an approximate shape with the molds 144a and 144b, it is also possible to adjust the thickness of the ribbon 142 by placing a flat mold on both sides and pressing the circular wire 1420. Various other methods may be applied.

As a result, as shown in FIG. 9C , the ribbon 142 having the first portions 1421a and 1422a and the second portions 1421b and 1422b having rounded both sides can be manufactured.

According to this method, since the ribbon 142 can be formed by processing the original wire 1420 made of metal, the manufacturing process can be simplified and the manufacturing method can be minimized. However, the present invention is not limited thereto, and it is possible to manufacture the ribbon 142 by a method such as drawing, and various other methods may be used.

In this embodiment, it is exemplified that the ribbon 142 has the same structure in the first region 142a and the second region 142b. However, the present invention is not limited thereto.

10, and with reference to FIGS. 11 and 12, the shape of the ribbon 142 according to another embodiment of the present invention will be described in more detail. For parts that are the same as or extremely similar to the above description, since the above description may be applied as it is, detailed descriptions will be omitted and only different parts will be described in detail. In addition, combinations of the above-described embodiment or a modified example thereof and the following embodiment or a modified example thereof are also within the scope of the present invention.

10 is a schematic cross-sectional view of a solar cell module according to another embodiment of the present invention.

As shown in FIG. 10 , the first region 142a positioned on the front surface of the semiconductor substrate 160 includes a first portion 1421a and a second portion 1421b , and is disposed on the rear surface of the semiconductor substrate 160 . The positioned second region 142b may include a third portion 1426 having a uniform width. Then, the second region 142b positioned at the rear surface where the incident light may be relatively small or absent may have a larger cross-sectional area to further reduce resistance. For example, the second region 142b may have a rectangular shape that may have structural stability. However, the present invention is not limited thereto, and the second region 142b may have a circular shape of a circular line (reference numeral 1420 in FIG. 9A ) or a round shape as a whole. Various other variations are possible.

The ribbon 142 of this structure performs different processing corresponding to the first region 142a and the second region 142b, or the first portion at regular intervals on a circular line having the shape of the second region 142b. It can be formed by various methods such as processing to form 1421a.

11 is a schematic cross-sectional view of a solar cell module according to another embodiment of the present invention, and FIG. 12 is a perspective view of a ribbon included in the solar cell module shown in FIG. 11 .

11 and 12 , the first region 142a includes a first portion 1421a and a second portion 1421b, and the second region 142b includes a first portion 1422a and a second portion. (1422b). At this time, the upper and lower positions of the first portion 1421a and the second portion 1421b of the first region 142a and the upper and lower positions of the first portion 1422a and the second portion 1422b of the second region 142b are can be opposite to each other. Then, the first portions 1421a and 1422a are connected adjacent to the first and second electrodes 42 and 44, respectively, and the second portions 1421b and 1422b are connected to the first and second electrodes 42 and 44, respectively. It is located far away, adjacent to the outside. In this case, the light incident on the rear surface of the semiconductor substrate 160 may be totally reflected from the rear sheet 200 side to be reused. In addition, by increasing the attachment area of the second region 142b attached to the second electrode 44 , the attachment characteristic of the ribbon 142 may be improved.

The intermediate region 142c positioned between the first region 142a and the second region 142b (ie, between the solar cells 150) may have the same shape as the first region 142a, and It may have the same shape as the second region 142b. Alternatively, as shown in FIG. 12 , the intermediate region 142c positioned between the first region 142a and the second region 142b may have a shape different from that of the first and second regions 142a and 142b. can For example, the intermediate region 142c may have a rectangular shape or a circular shape of a circular line (reference numeral 1420 of FIG. 9A ).

The ribbon 142 having such a structure performs different processing corresponding to the first region 142a and the second region 142b, or on a circular line having the shape of the first region 142a or the second region 142b. It may be formed by various methods such as processing to form the second portion 1422a or the first portion 1421a at regular intervals.

The features, structures, effects, etc. as described above are included in at least one embodiment of the present invention, and are not necessarily limited to one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

100: solar cell module
150: solar cell
142: ribbon
142a: first area
142b: second region
142c: middle area
1421a, 1422a: first part
1421b, 1422b: second part

Claims (20)

a solar cell including a first solar cell and a second solar cell each including a semiconductor substrate, a conductive region, and an electrode including a bus bar electrode and a finger electrode on the conductive region; and
A ribbon attached on the electrode to connect the electrode of the first solar cell and the electrode of the second solar cell
including,
A solar cell module in which the ribbon includes a first portion having a beveled side surface and a second portion positioned adjacent to the first portion and having a side surface that intersects the beveled side surface of the first portion. According to claim 1,
An angle between the inclined side surface of the first part and a surface adjacent to the electrode in the ribbon is 22 degrees to 45 degrees. According to claim 1,
A solar cell module in which a second surface opposite to the first surface adjacent to the electrode in the first portion is formed parallel to the first surface. According to claim 1,
A cross-section of the second part is a solar cell module having a rectangular shape or a quadrilateral shape in which both sides are rounded. According to claim 1,
The first portion has a first width on a first side adjacent to the electrode side and a second width smaller than the first width on a second side opposite the first side,
The width of the second portion is 95% to 110% of the first width of the solar cell module. According to claim 1,
The thickness of the second part: the thickness ratio of the first part is 1:0.5 to 1:2 solar cell module. According to claim 1,
The first portion has a first width on a first side adjacent to the electrode side and a second width smaller than the first width on a second side opposite the first side,
A solar cell module in which a ratio of the second width to the first width is 1:1.1 to 1:5. 8. The method of claim 7,
A solar cell module in which a ratio of the second width to the first width is 1:1.2 to 1:2. According to claim 1,
The thickness ratio of the first part to the thickness of the second part is 1:0.01 to 1:5 solar cell module. 10. The method of claim 9,
The thickness of the first part: the thickness ratio of the second part is 1:0.3 to 1:2 solar cell module. According to claim 1,
The electrode comprises a first electrode and a second electrode,
the ribbon comprises a first region connected to a first electrode of the first solar cell and a second region connected to a second electrode of the second solar cell;
The solar cell module in which the first region includes the first portion and the second portion. 12. The method of claim 11,
the second region comprises the first portion and the second portion;
A solar cell module in which the upper and lower positions of the first part and the second part are the same in the first area and the second area. 12. The method of claim 11,
the second region comprises the first portion and the second portion;
A solar cell module in which vertical positions of the first part and the second part are opposite to each other in the first region and the second region. 12. The method of claim 11,
The solar cell module in which the second portion is positioned between the first portion and the electrode in the first region. According to claim 1,
The solar cell module further comprising an adhesive layer bonding the ribbon and the electrode between the ribbon and the electrode. 16. The method of claim 15,
A solar cell module in which the adhesive layer is positioned planarly between the ribbon and the electrode, or entirely surrounds an outer surface of the ribbon. According to claim 1,
a sealing material surrounding the solar cell;
a front substrate positioned on one side of the sealing material; and
The back sheet positioned on the other side of the sealing material
A solar cell module further comprising a. A ribbon for a solar cell module that connects an electrode including a bus bar electrode and a finger electrode of a first solar cell adjacent to each other and an electrode including the bus bar electrode and a finger electrode of a second solar cell to each other,
The ribbon for a solar cell module comprising: a first portion having an inclined side surface; and a second portion positioned adjacent to the first portion and having a side surface that intersects the inclined side surface of the first portion . 19. The method of claim 18,
An angle between the inclined side surface of the first part and the bottom surface of the ribbon is 22 degrees to 45 degrees for a solar cell module ribbon. 19. The method of claim 18,
A cross-section of the second portion has a rectangular shape, or a ribbon for a solar cell module having a quadrilateral shape in which both sides are rounded.

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